CN106783834A - A kind of modular photodiode encapsulation making method - Google Patents
A kind of modular photodiode encapsulation making method Download PDFInfo
- Publication number
- CN106783834A CN106783834A CN201710012905.4A CN201710012905A CN106783834A CN 106783834 A CN106783834 A CN 106783834A CN 201710012905 A CN201710012905 A CN 201710012905A CN 106783834 A CN106783834 A CN 106783834A
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- led
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- making method
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000004020 conductor Substances 0.000 claims abstract description 35
- 239000002245 particle Substances 0.000 claims abstract description 29
- 239000003822 epoxy resin Substances 0.000 claims abstract description 6
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 6
- 238000003854 Surface Print Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000741 silica gel Substances 0.000 claims description 15
- 229910002027 silica gel Inorganic materials 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000003973 paint Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of modular photodiode encapsulation making method, belong to diode packaging technology field, V-groove is cut on substrate with shape hundreds above unit, through hole is made on each unit；LED crystal particle will not be attached in through hole, being filled with epoxy resin makes not LED crystal particle be fixed in hole；Lower conductor layer is formed in substrate conducting resinl printed below, is allowed to be connected with not LED crystal particle lower surface；Upper conductor layer is formed in surface printing conducting resinl, is allowed to be connected with not LED crystal particle upper surface；Using flip LED crystal grain, its N pole part upper conductor layer connected with not LED crystal particle top is connected, and flip LED crystal grain P poles are connected with remaining upper conductor layer；By strip substrate jackknifing into graininess element.The present invention encapsulates design, the luminous efficiency of lifting product, the radiating efficiency for increasing product and the security for ensureing LED grain using modular photodiode.
Description
Technical field
The present invention relates to a kind of modular photodiode encapsulation making method, belong to diode packaging technology neck
Domain.
Background technology
With continuing to develop for science and technology, electronic product updates the speed of iteration also in quickening, and LED surface mount elements
To miniaturization, integrated development.The encapsulation technology of LED pasters is constituted using copper stent combination plastic mold in the market,
It is packaged with die bond, bonding wire, technology for dispensing glue as carrier, then encapsulation is completed through shelling grain punching press.
Finished product lighting angle is smaller after the LED paster encapsulation technologies of this in the market, the encapsulation of its product, and luminescent grain does not set
Put in light-emitting zone silica gel, influence luminous efficiency, design space occupancy is more, less suitable for the design requirement of miniaturization.
The content of the invention
Problem to be solved by this invention is a kind of modular photodiode encapsulation making method, is conducive to improving and produces
The luminous efficiency of product, increases the lighting angle of product, reduces taking up room for component, and the product design for being more suitable for miniaturization is needed
Ask.
In order to solve the above-mentioned technical problem, the technical solution adopted in the present invention is：
A kind of modular photodiode encapsulation making method, its manufacturing step is as follows：
A, on substrate V-groove is cut with shape hundreds above unit, through hole is made on each unit；
B, LED crystal particle is attached in through hole, being filled with epoxy resin makes not LED crystal particle be fixed on hole
It is interior；
C, lower conductor layer is formed in substrate conducting resinl printed below, be allowed to be connected with not LED crystal particle lower surface；
D, surface printing conducting resinl formed upper conductor layer, be allowed to be connected with not LED crystal particle upper surface；
E, using flip LED crystal grain, its N pole part upper conductor layer connected with not LED crystal particle top is connected, upside-down mounting
LED grain P poles are connected with remaining upper conductor layer；
F, surface be covered with layer of silica gel capping entire substrate and LED grain and upper and lower conductor layer；
G, joint-cutting will be formed in the layer of silica gel of substrate V-groove correspondence position；
H, by substrate jackknifing into strips；
I, side conductor layer is set in substrate both sides, the side conductor layer upper lower conductor layer of connection forms termination electrode；
J, by strip substrate jackknifing into graininess element；
K, on termination electrode formed have scolding tin metal conductor layer.
Foregoing a kind of modular photodiode encapsulation making method, the substrate is ceramic material.
Foregoing a kind of modular photodiode encapsulation making method, the substrate of the flip LED chips epitaxial layer,
Energy gap of its energy gap higher than light emitting epitaxial layer.The substrate of AlInGaN flip LED chips is sapphire Al2O3； AlxGa（1-x）As falls
The substrate for filling LED chip is AlyGa（1-y）As, x>y。
Foregoing a kind of modular photodiode encapsulation making method, the flip LED chips emission wavelength from
Between 300nm to 980nm, constituted using the integrated LED chip of Serial-Parallel Type.
Foregoing a kind of modular photodiode encapsulation making method, the not LED crystal particle may be designed to
Trapezoid cross section prevents crystal grain from rolling to reduce crystal grain center of gravity；Surface sets silver projection to increase electric conductivity thereon.
Foregoing a kind of modular photodiode encapsulation making method, the not LED crystal particle is used as upside-down mounting
LED chip protection diode.
Foregoing a kind of modular photodiode encapsulation making method, the silica gel is that the mixing of optical clear silica gel is glimmering
The mixed arogel of light powder.
Foregoing a kind of modular photodiode encapsulation making method, the silicon in substrate V-groove correspondence position
Joint-cutting is formed on glue, it uses and photosensitive insulated paint is coated with silica gel, then through exposure and development, mould from, to form joint-cutting.
The beneficial effects of the invention are as follows：
1st, using flip LED crystal grain, luminous flux loss is reduced, lifts its luminous efficiency；
2nd, will not LED package in ceramic substrate, because ceramics thermal conductivity factor be more than epoxy resin, so as to significantly carry
Rise its radiating efficiency；
3rd, using modular Integrated design, the work(of light-emitting component and control with the protection of electronic component is had concurrently in same device
Can, taking up room for product is effectively reduced, meet the design requirement of miniaturization.
Brief description of the drawings
Fig. 1 is a kind of modular photodiode encapsulation manufacturing flow chart of the present invention；
Fig. 2 is that the present invention is the board structure schematic side view for having V-groove earnestly；
Fig. 3 is that the present invention is the board structure schematic side view after perforate；
Fig. 4 is the present invention in the schematic side view of die bond in through hole；
Fig. 5 is the schematic side view that the present invention is the not trapezoidal crystal grain of light emitting diode die bond in through hole；
Fig. 6 is that the present invention is the not LED crystal particle sealing schematic side view with silver projection；
Fig. 7 is that the present invention is that LED crystal particle does not fill epoxy resin schematic side view；
Fig. 8 is that the present invention is the schematic side view of printing lower conductor layer；
Fig. 9 is that the present invention is the schematic perspective view of printing lower conductor layer；
Figure 10 is that the present invention is the schematic perspective view of printing upper conductor layer；
Figure 11 is that the present invention is the schematic perspective view of LED flip chip die bond；
Figure 12 is that the present invention is LED flip chip and not light emitting diode parallel circuit figure；
Figure 13 is the schematic side view that the present invention seals silica gel on substrate；
Figure 14 is the schematic perspective view that the present invention seals silica gel on substrate；
Figure 15 is that the present invention is the silica gel joint-cutting schematic side view of counterpart substrate dissected valley position；
Figure 16 is that the present invention is substrate jackknifing schematic perspective view into strips；
Figure 17 is the schematic perspective view that the present invention forms terminal for substrate both sides attachment conducting resinl；
Figure 18 be the present invention be by the jackknifing of strip substrate into particle schematic perspective view；
Figure 19 is that the present invention is the single schematic perspective view of interiors of products structure.
Figure 20 is that the present invention is single series connection integrated LED chip schematic side view.
Figure 21 is that the present invention is single series connection integrated LED chip circuit diagram.
Specific embodiment
For the feature of this product is expanded on further, below in conjunction with Figure of description, to primary structure of the invention and reality
Applying method, step are further described.
As shown in Fig. 1-Figure 21, a kind of modular photodiode encapsulation making method, its manufacturing step is as follows：
A, V-groove 8 is cut on substrate 1 to form hundreds of above units, through hole is made on each unit；
B, LED crystal particle 2 is attached in through hole, being filled with epoxy resin 3 is fixed on not LED crystal particle
In hole；
C, lower conductor layer 4 is formed in substrate conducting resinl printed below, be allowed to be connected with not LED crystal particle lower surface；
D, surface printing conducting resinl formed upper conductor layer 5, be allowed to be connected with not LED crystal particle upper surface；
E, using flip LED crystal grain 6, the part upper conductor layer that its N pole is connected with not LED crystal particle upper surface is connected,
Dress LED grain P poles and remaining upper conductor layer（Refer to not with the upper conductor layer that LED crystal particle upper surface is not connected）Connection；
F, surface be covered with layer of silica gel 7 capping entire substrate and LED grain and conductor layer；
G, will in the layer of silica gel of the correspondence position of substrate V-groove 8 formed joint-cutting 10；
H, by substrate jackknifing into strips；
I, side conductor layer 8 is set in substrate both sides, the side conductor layer upper lower conductor layer of connection forms termination electrode；
J, by strip substrate jackknifing into graininess element；
K, on termination electrode formed have scolding tin metal conductor layer.
The not LED crystal particle is designed to trapezoid cross section to reduce crystal grain center of gravity, prevents crystal grain from rolling, also can be
Its upper surface sets silver projection 9 to increase electric conductivity.Its lighting angle of the encapsulating products up to 180 °, using modular integrated
Encapsulation technology, protection diode crystal grain is enclosed in ceramic substrate, reduces space shared by component, and it is luminous to improve product
Efficiency, also ensure that the safety in utilization of product, increases it and uses life cycle.
In sum, the present invention provides a kind of modular integrated photodiode encapsulation, by the structure to product and
Manufacturing process is redesigned and optimized, and its optical characteristics is also improved while Product Safety is protected, in LED markets
To be widely used.
The invention is not limited in any way for above-described embodiment, all to be obtained by the way of equivalent or equivalent transformation
Technical scheme, all fall within protection scope of the present invention.
Claims (10)
1. a kind of modular photodiode encapsulation making method, its manufacturing step is as follows：
A, in substrate（1）On cut V-groove（8）To form some units, through hole is made on each unit；
B, will not LED crystal particle（2）It is attached in through hole, uses epoxy resin（3）Filling consolidates not LED crystal particle
It is scheduled in hole；
C, form lower conductor layer in substrate conducting resinl printed below（4）, it is allowed to be connected with not LED crystal particle lower surface；
D, surface printing conducting resinl formed upper conductor layer（5）, it is allowed to be connected with not LED crystal particle upper surface；
E, using flip LED crystal grain（6）, the connected part upper conductor layer in its N pole and not LED crystal particle top is connected,
Dress LED grain P poles are connected with remaining upper conductor layer；
F, it is covered with layer of silica gel in surface（7）Capping entire substrate and LED grain and upper and lower conductor layer；
G, joint-cutting will be formed in the layer of silica gel of substrate V-groove correspondence position（10）；
H, by substrate jackknifing into strips；
I, substrate both sides set side conductor layer（8）, the upper lower conductor layer of side conductor layer connection, formation termination electrode；
J, by strip substrate jackknifing into graininess element；
K, on termination electrode formed have scolding tin metal conductor layer.
2. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：The base
Plate (1) is ceramic material.
3. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described not
LED crystal particle (2) is and the not luminous semiconductor element with PN junction structure.
4. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described fall
Dress LED grain（6）The substrate of epitaxial layer, energy gap of its energy gap higher than light emitting epitaxial layer.
5. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described fall
Dress LED grain（6）Emission wavelength is between 300nm to 980nm.
6. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described fall
Dress LED grain（6）Upside-down mounting crystal grain is constituted using the integrated LED crystal grain of tandem type.
7. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：The silicon
Glue（7）It is the mixed arogel of mixed fluorescent powder.
8. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described
The detailed process of formation joint-cutting is in the layer of silica gel of substrate V-groove correspondence position：Using being coated with photosensitive insulated paint in layer of silica gel,
Again through exposure and development, mould from, to form joint-cutting.
9. a kind of modular photodiode encapsulation making method according to claim 1, it is characterised in that：It is described fall
Dress LED grain（6）For the upside-down mounting crystal grain that the integrated AlInGaN LED grains of tandem type are constituted.
10. a kind of modular photodiode encapsulation making method according to claim 9, it is characterised in that：It is described
LED crystal particle is not connected with integrated AlInGaN LED grains with parallel circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710012905.4A CN106783834A (en) | 2017-01-09 | 2017-01-09 | A kind of modular photodiode encapsulation making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710012905.4A CN106783834A (en) | 2017-01-09 | 2017-01-09 | A kind of modular photodiode encapsulation making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783834A true CN106783834A (en) | 2017-05-31 |
Family
ID=58951194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710012905.4A Pending CN106783834A (en) | 2017-01-09 | 2017-01-09 | A kind of modular photodiode encapsulation making method |
Country Status (1)
| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200802996A (en) * | 2006-06-16 | 2008-01-01 | Shinko Electric Ind Co | Semiconductor device and method of manufacturing semiconductor device |
| CN101350321A (en) * | 2007-07-18 | 2009-01-21 | 晶科电子（广州）有限公司 | Method for manufacturing LED directly mounted on a support upside-down |
| CN103959492A (en) * | 2011-12-09 | 2014-07-30 | 日本特殊陶业株式会社 | Wiring board for having light emitting element mounted thereon |
-
2017
- 2017-01-09 CN CN201710012905.4A patent/CN106783834A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200802996A (en) * | 2006-06-16 | 2008-01-01 | Shinko Electric Ind Co | Semiconductor device and method of manufacturing semiconductor device |
| CN101350321A (en) * | 2007-07-18 | 2009-01-21 | 晶科电子（广州）有限公司 | Method for manufacturing LED directly mounted on a support upside-down |
| CN103959492A (en) * | 2011-12-09 | 2014-07-30 | 日本特殊陶业株式会社 | Wiring board for having light emitting element mounted thereon |
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Application publication date: 20170531 |