CN101567411A - Flip-chip integrated encapsulation structure of LED and method thereof - Google Patents

Flip-chip integrated encapsulation structure of LED and method thereof Download PDF

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CN101567411A
CN101567411A CN 200910039786 CN200910039786A CN101567411A CN 101567411 A CN101567411 A CN 101567411A CN 200910039786 CN200910039786 CN 200910039786 CN 200910039786 A CN200910039786 A CN 200910039786A CN 101567411 A CN101567411 A CN 101567411A
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chip
silicon
led
substrate
silicon substrate
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CN 200910039786
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宇 侯
周玉刚
曾照明
肖国伟
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晶科电子(广州)有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
    • H01L2924/10253Silicon [Si]

Abstract

The invention provides a novel light emitting diode (LED) encapsulation structure which directly adopts a silicon dice substrate as both a surface mounting bracket and a radiation channel of an integrated structure support of an LED chip; a front electrode connecting layer is arranged on the front surface of the silicon dice substrate; the front electrode connecting layer on the front surface of the silicon dice substrate is connected with an electrode metal bonding pad at the back of the silicon dice substrate through a lead of a silicon groove side-wall or a lead of a through-hole of the silicon dice substrate; and at least one LED chip is welded directly by flip-chip on the front electrode connecting layer of the silicon dice substrate with an optical source through a metal bump. The invention also provides a method for manufacturing the LED encapsulation structure. The invention avoids steps of die bonding and gold-wire welding and enhances the connection reliability of chips and especially the connection reliability of multi-chip modules; and the invention leads the encapsulation of high-power LED and especially the encapsulation of multi-chip module to be miniaturized and also leads power-supply drive and circuits of LED protection and the like to be integrated on the silicon dice so as to provide a systematic and integrated encapsulation proposal for high-power LED illumination.

Description

发光二极管倒装焊集成封装结构及制作方法 Flip-chip light emitting diode package structure and method for fabricating integrated

技术领域 FIELD

本发明涉及发光二极管的制造及组装领域,具体是以硅加工工艺为基础, 将发光二极管直接倒装于带有反光杯的硅集成封装结构中的一种发光二极管倒装焊集成封装结构和制作方法。 The present invention relates to a light emitting diode manufacturing and assembly, and in particular is based on a silicon process, the directly flip-chip light emitting diode package structure with a silicon integrated reflective cup in an LED package structure and a flip-chip integrated production method. • 背景技术 • Background technique

氮化镓基(GaN)发光二极管(LED)的结构,大多是先在蓝宝石(sapphire) 的基板上通过外延生长多层氮化镓(GaN)的晶体层,然后通过制造工艺在LED 芯片的P型区域及N型区域上分别引出金属电极,如图ll和l-2所示,在芯片1上形成金属电极--P电极2和N电极3。 Structure of gallium nitride based (GaN) light-emitting diode (LED), mostly on a first substrate made of sapphire (Sapphire) by epitaxial growth of the multilayer nitride (GaN) crystal layer, then the manufacturing process of the LED chip P type region and the N-type metal electrode lead region, respectively, as shown in FIG ll, and l-2, N 2 and the electrode 3 is formed a metal electrode on the chip 1 --P electrode. 传统的LED通常的组装方法是,将LED芯片1用界面导热材料(TIM) 4贴装固定在封装支架5内,通过金线6 键合(Wire Bonding)连接LED'芯片上的P电极2和N电极3与封装支架的电极焊盘7。 Conventional LED assembly is usual, the LED chip 1 with a thermally conductive interface material (TIM) 4 mounting bracket 5 is fixed within the package, connecting LED 'P 2 and the electrode on the chip using a gold wire bond 6 (Wire Bonding) N electrodes 3 and the package pad holder 7. 其中,LED芯片1的金属电极向上,固定放置在一基板上。 Wherein, LED chip 1 up metal electrode, placed on a fixed substrate. 金线键合完成后,使用高透明的树脂将LED芯片包封起来,以保护发光器件和封装结' 构。 After gold wire bonding is completed, a highly transparent resin is used to encapsulate the LED chip to protect the light emitting device package and junction 'structure.

随着LED亮度和功率的提高,封装结构和材料对LED的性能和使用寿命起着至关重要的作用。 With the improvement of brightness and power LED package structure and materials plays a vital role on the performance and service life of LED. 大功率LED的封装结构对于散热有较高要求,目前常用的封装结构有两种:普通仿流明型和表面贴装型。 For high-power LED package structure with high heat dissipation requirements, currently used packaging structure has two kinds: ordinary imitation lumen type and surface mount type. 普通仿流明型的结构如图1-1 所示,支架中间是一个反光杯10,先将芯片1用界面导热材料4贴装固定在杯中,芯片1底部直接与导热金属9接触,可以加快散热;通过金线6跨过反光杯,键合连接LED的金属电极2、 3和支架外部电极7。 Common lumens imitation type shown in Figure 1-1, the intermediate frame is a reflective cup 10, with a first interface chip mounting a thermally conductive material 4 is fixed in the cup, the bottom of the chip in direct contact with a thermally conductive metal 9 can be accelerated heat; by gold wires 6 across the reflector, the LED bonded to a metal electrode 2 is connected, the external electrode 7 and the holder 3. 这种封装结构可以用一般的焊锡焊线的方法连接两个引出电极8,也可以贴装于金属PCB板上再进行焊接。 This package may be connected by a general method of two solder bonding wire lead-out electrodes 8 and to be mounted to the PCB and then soldering the metal. 普通表面贴装型的结构如图l-2所示,同样是将芯片l贴装固定在杯中, 金线6直接打在反光杯中的外部电极焊盘7上,然后通过金属电连接到背面形成电极8,其余与普通仿流明型的结构差不多,可直接表面贴装在PCB板上。 Ordinary surface-mount configuration illustrated in FIG. L-2, l is also mounted on the chip is fixed in the cup, the line 6 directly hit the reflector cup of external electrode pad 7, and electrically connected by the metal the back surface electrode 8 is formed, and the remaining common type structure similar imitation lumen, can be surface mounted directly to the PCB. 从目前的两种封装结构看,LED芯片都是正面朝上,需要打金线连接LED芯片和外部导电电极;金线的存在不仅会阻碍一部分出光,而且对后工序的封装工作(如荧光粉涂敷、封树脂等)造成不便;特别是对于多芯片的封装,芯片之间和芯片与外部电极之间都是通过金线连接,金线数量的增加以及多个焊点的可靠性就成为了多芯片组装发展的制约。 Two package from the current look, the LED chips are face up, the need to fight the LED chip and the gold wires connected to the conductive outer electrode; the presence of the gold wire part of light will not only hinder, but after the work process of the package (e.g., Phosphor coating, sealing resin) caused inconvenience; especially for multi-chip packages between chips and between the chip and the external electrode are connected by gold wire, gold wire to increase the number of the plurality of solder joints and the reliability becomes restricting the development of the multi-chip assembly. 同时由于要打金线,整个封装结构的体积不可能做得太小;普通仿流明结构有两个杯口,本身体积就较大;而表面贴装型由于需要在反光杯中实现金线键合,因而要预留打线的空间,整个封装结构也不可能太小。 Fight and because gold wire, the volume of the entire package can not be made too small; imitation ordinary cup structure has two lumens, it is the larger volume itself; the surface mount due to the need to achieve a gold wire bonds in the reflector cup together, so to reserve a space in the wire, the entire package can not be too small.

随LED产业的发展,大功率高亮度的LED的应用范围不断扩大,市场对LED性能要求也不断提高。 With the development of LED industry, high-power high brightness LED's expanding range of applications, the market for LED performance requirements is also rising. 目前对于大功率LED的发展主要集中在如何进一步提高LED的亮度和如何更好地解决散热问题。 At present, for the development of high-power LED focused on how to further improve the brightness of the LED and how best to solve the heat problem. 倒装焊LED方案(Flip-chip LED) 是其中解决出光和散热问题比较有效的方法之一,如图1-3所示。 Flip LED solutions (Flip-chip LED) is one of light and heat more effective way to solve the problem that shown in Figure 1-3. 倒装焊工艺是 Flip-chip process is

将LED芯片的P和N电极通过倒装焊的形式直接连接到一个硅片衬底3上,该衬底多采用硅衬底,也可以是其它导热较好的材料。 The LED chip is connected to the P and N electrodes on the silicon substrate 3 by a flip-chip direct form, the substrate is a silicon substrate to use more, or may be other thermally conductive material preferred. 倒装后LED从蓝宝石面出光,没有了P和N电极挡光,出光效率提高;而且发光氮化镓层直接通过导热较好的衬底散热,比传统的LED通过蓝宝石散热要好得多。 After flip-chip LED light from the sapphire surface, no light blocking electrodes P and N, to improve the efficiency of the light; and a light-emitting gallium nitride layer is preferably thermally conductive substrate directly by heat, than the traditional LED much better heat dissipation through the sapphire. 但目前的倒装焊LED 芯片的应用大多还是采用上面提到的两种封装方式,如图1-3所示是倒装焊LED芯片采用普通仿流明型的封装结构。 But the application of the LED chip flip-chip or the use of most of the above-mentioned two kinds of packages, as shown in FIG 1-3 are flip-chip LED chip ordinary imitation lumen type package structure shown in FIG. 从中可见,这种封装结构的应用仍然需要 From this, the application of this package still needs

打金线,只是打金线的焊盘位置由LED芯片上改到了硅衬底上,但以上提到的 Goldsmith line, just hit by a gold wire on the LED chip pad locations on a silicon substrate to change, but the above-mentioned

这些封装结构的缺点仍然没有解决。 The disadvantage of these packaging structure remains unresolved. 发明内容 SUMMARY

本发明的目的是针对以上所述传统大功率LED封装结构存在的不足,提供一种省略了固晶和焊金线的步骤,有利于后工序的荧光粉涂敷和封胶等工艺的生产,提高了芯片特别是多芯片模组的连接可靠性,并解决了功率型芯片的散热问题的发光二极管倒装焊集成封装结构。 The present invention is directed to the inadequate power than conventional LED package structure is present, the steps are omitted to provide a die attach solder and gold wire, facilitates the production of the phosphor coating process and other processes of the sealant, especially improved connection reliability chip multichip module, and solve the problem of power dissipation of the chip-type light-emitting diode flip-chip integrated package.

本发明的另一目的是提供一种发光二极管倒装焊集成封装方法。 Another object of the present invention is to provide an LED packaging method for flip-chip integrated. 发光二极管倒装焊集成封装结构,以硅片衬底直接作为LED芯片的结构支. 撑的表面贴装支架和散热通道,将至少一个LED芯片直接倒装焊接在具有反光杯的硅片衬底上。 Integrated flip-chip light emitting diode package structure, directly to the silicon substrate as a supporting structure of the LED chip. Strut bracket and the heat radiating surface mount channel, the at least one LED chip is directly flip-chip bonded in a silicon substrate having a reflective cup on.

所述的硅片衬底的正面设置有正面电极连接层,正面电极连接层从硅片衬底的正面引到背面与硅片衬底背面的电极金属焊盘连接,至少一个LED芯片直接通过金属凸点倒装焊接在具有反光杯的硅片衬底的正面电极连接层上。 The front side of the silicon substrate is provided with a front electrode connection layer, the front electrode lead is connected from the front side the silicon substrate layer to the back surface of the electrode metal pad connected to the back of the silicon substrate, the at least one LED chip directly through the metal flip-chip bonding bump electrode connection layer on the front surface of the silicon substrate having a reflector cup.

所述的硅片衬底可以集成有LED所需的各种配套电路,如LED的保护电路、电源转换和驱动电路等;在硅片衬底背面设置有背面导热金属焊盘。 The silicon substrate may be integrated with a variety of support circuitry required LED, such as LED protection circuit, a power converter and a driving circuit; back surface of the silicon substrate provided with a heat conductive backside metal pad.

所述的正面电极连接层从硅片衬底的正面引到背面与硅片衬底背面的电极金属焊盘连接的方式可以是硅槽侧壁引线或者硅片衬底通孔引线的方式。 Embodiment of the front electrode lead connection layer from the front side of the silicon substrate to the back surface of the silicon substrate and the back electrode metal pad may be connected to the groove side wall silicon wafer substrate via lead wires or manner.

所述的反光杯可以是通过直接在硅片衬底上形成硅槽作为反光杯口,硅槽表面沉积上高反射率的金属层作为反光层,反光金属层可以是铝或银等。 The reflective cup may be formed by a groove directly on a silicon wafer substrate as a reflective cup, the surface of the silicon groove is deposited on the metal layer as a high reflectivity reflecting layer, the metal reflecting layer may be of aluminum or silver.

所述的反光杯可以是一片反光杯圆片与硅片衬底通过圆片级键合(WaferBonding)连接在一起形成的。 The reflective cup may be a silicon substrate wafer and the reflective cup formed are joined together by wafer level bonding (WaferBonding). 反光杯圆片与硅片衬底之间是通过中间介质层粘合连接在-起。 Reflective glass wafer and the silicon substrate between the adhesive connection is through the intermediate dielectric - play. 反光杯圆片由已经加工好杯口和反光层组成,反光杯圆片与硅片衬底的尺寸相当。 Reflective glass wafer by a cup and has a good working reflective layers, the size of the silicon substrate wafer and the reflective cup equivalent. 反光杯圆片为片状材料制成的,所用的材料可以是玻璃、 塑料、陶瓷、硅或者金属等。 Reflective glass wafer made of a sheet material, the material used may be glass, plastic, ceramic, silicon or metal.

所述的LED芯片可以是单一的一个芯片,或者是两个或两个以上芯片形成的阵列模组(如lx2、 1x3、 1x4、 2x2、 3x3......等);芯片可以是不同尺寸、不 The LED chip may be a single chip or two or more chip arrays formed two modules (e.g. lx2, 1x3, 1x4, 2x2, 3x3, etc. ......); chip may be different size, not

同颜色芯片的组合。 Combination with color chips. 相应的封装结构的外形可以是方形、长方形或其它要求的形状。 Shape corresponding the shape of the package structure may be square, rectangular or other requirements.

所述的金属凸点可以是制造在LED芯片的P、 N电极上,然后LED芯片的电极凸点直接与硅片上的电极金属焊盘倒装连接;或者金属凸点是制造在硅片上,然后LED芯片的电极焊盘倒装直接与硅片的金属凸点连接。 The metal bumps may be fabricated LED chip P, the N-electrode and the bump electrode of the LED chip is directly flip-chip connected to the metal pad electrode on the silicon wafer; or a metal bump on a silicon wafer is manufactured then the LED chip is directly flip-chip bonding of the electrode pads to bumps of the wafer. 所述的金属凸点是通过电镀工艺或者其它方式形成;金属凸点的材料可以为铅、锡、金、镍、 铜中单一的材料、多层材料或者合金。 The metal bump is formed by plating process or otherwise; metal bump material may be lead, tin, gold, nickel, and copper single material, an alloy or a multilayer material. 金属焊盘的材料可以为镍、金、银、铝、 钛、钨、镉等中单一的材料、多层材料或者合金。 Metal pad material may be nickel, gold, silver, aluminum, titanium, tungsten, cadmium, and the like of a single material, an alloy or a multilayer material. 所述的金属凸点同金属焊盘的键合过程可以是用回流焊的方式或是用加热后加超声波的焊接。 The metal bump bonding with the metal pad during reflow may be a way to increase or ultrasonic welded after heating.

一种发光二极管倒装焊集成封装方法,其制作步骤如下:(l)进行LED芯片制造;(2)制作硅片衬底,在硅片衬底上形成反光杯,(3)将LED芯片直接倒装焊硅片衬底内;(4)最后进行LED的后封装。 A light emitting diode packaging method for flip-chip integration, the production steps are as follows: (l) for manufacturing a LED chip; (2) Production of silicon wafer substrate, forming a reflective cup on a silicon substrate, (3) the LED chip is directly Flip the silicon substrate; (4) Finally, after the LED package.

所述的(2)步骤的制作步骤如下:a、首先制作硅片衬底和反光杯圆片;b、 然后将有着相同特征尺寸的反光杯圆片与硅片衬底进行位置对准,进行圆片级的键合,使硅片衬底和反光杯圆片连接在一起,圆片级键合可以是采用中间介质层连接,并通过回流固化工艺实现,也可以是通过其它工艺方法实现。 Prepared according to step (2) step is as follows: a, first make the silicon substrate wafer and the reflective cup; B, will have the same characteristics and dimensions of the silicon substrate wafer and the reflective cup aligned in position for wafer-level bonding the silicon wafer substrate and the reflective cup are joined together, the wafer level bonding using intermediate dielectric layer may be connected to, and implemented by reflux curing process, it may be achieved by methods other processes. c、在硅片衬底的背面开出凹槽。 c, the back surface of the silicon substrate out of the groove. d、在硅片衬底的凹槽内和背面金属布线。 d, in the recess of the silicon substrate and the back metal wiring.

所述的(2)步骤的包括的制作步骤如下:a、在硅片衬底上形成硅槽反光杯口 Said creating step comprises the step (2) as follows: a, a silicon groove is formed in the reflective cup on a silicon wafer substrate

和底部通孔。 And the bottom of the via. b、然后在硅片衬底的正面和背面进行金属布线。 b, then a metal wiring in the front and back of the silicon substrate.

本发明的制造方法结合了硅集成电路技术(Silicon IC Technology)、硅槽布. 线技术(Silicon Trench Metallization Technology)以及倒装焊技术(Flip-Chip Teclmology)等。 Method of the present invention combines silicon integrated circuit technology (Silicon IC Technology), silicon groove cloth. Line art (Silicon Trench Metallization Technology) and flip chip technology (Flip-Chip Teclmology) and the like. 通过在硅片表面形成合适的反光杯,再通过硅片挖槽和金属布线等工艺,将LED导电电极从硅片正面引到背面,实现表面贴装型的封装结构。 Suitable reflective cup formed by the silicon wafer surface, and then by silicon trenching metal wiring process, conducting the LED electrode lead from the front to the back of the wafer to achieve a surface mount type package. 然后将最少一个LED芯片通过金属凸点直接倒装在反光杯中的硅片上,实现电连接。 Then least one LED chip is directly flip-chip bumps through the metal reflective cup on a silicon wafer, an electrical connection.

本发明具有以下优点: The present invention has the following advantages:

1、 硅片衬底上可以预先集成各种电源转换、驱动和LED保护等电路,为. LED的最终应用提供了集成的解决方案。 1, can be integrated on a silicon substrate in advance a variety of power conversion, and an LED drive circuit protection for. LED final application provides an integrated solution.

2、 省略了固晶和焊金线的步骤,整个结构中没有一根金线,有利于后工序的荧光粉涂敷和封胶工艺的进行,同时提高了芯片特别是多芯片模组的连接可靠性。 2, and the die bonding step is omitted gold wire bonding, the entire structure is not a gold wire, a phosphor coating and sealant processes after step beneficial, especially while improving chip multichip module connector reliability.

3、 倒装焊接的LED芯片直接通过硅片衬底散热到下面的金属PCB板,解决了功率型芯片的散热问题。 3, the flip-chip bonding the LED chip to the heat sink directly beneath the silicon substrate through the metal PCB board, to solve the problem of power dissipation of the chip type.

4、 同一个硅片衬底的封装结构中,LED芯片可以是单一的芯片,也可以是. 两个或两个以上芯片形成的阵列模组。 4, the same package in a silicon substrate, LED chip may be a single chip, the module may be an array of two or more than two chip formed. 为大功率LED在照明领域的应用提供了系统的解决方案,可以形成不同亮度要求和不同形状要求的光源。 Providing high power LED lighting applications in the field of solution system, a light source may be formed in different shapes and different brightness requirements requirements.

5、 直接用硅衬底作为支撑的支架,省略了单独支架的加工制造,也不用预留打金线位置和空间,使整个封装结构非常小型化,满足市场日益对小型化封装的要求。 5, the direct use of the silicon substrate as a supporting bracket, the bracket is omitted separate manufacturing, they do not hit the gold reserve position and space, the entire package is downsized to meet market demand for increasing miniaturization of the package.

6、整个制作过程基本都是圆片(wafer)级的加工和操作工艺,使整个工艺很容易实现自动化和大生产化。 6, basically the entire production process wafer (the wafer) stage processing and operating processes, so that the whole process is easily automated and production of large. 附图说明 BRIEF DESCRIPTION

图l一la为传统功率型LED仿流明封装结构剖面示意图; Figure l la a conventional power LED package imitation lumen cross-sectional view;

图l一lb为传统功率型LED仿流明封装结构俯视示意图; Figure l is a lb conventional power LED package imitation lumen top view;

图l一2 a为传统功率型LED SMD封装结构剖面示意图; Figure l is a 2 a conventional power-type LED SMD package sectional view;

图l一2 b为传统功率型LED SMD封装结构俯视示意图; Figure l a 2 b is a conventional power-type LED SMD package top view;

图l一3 a为功率型倒装LED芯片仿流明封装结构剖面示意图; Figure l is a 3 a cross-sectional schematic view of a power-type flip-chip LED package structure imitation lumen;

图l一3 b为功率型倒装LED芯片仿流明封装结构俯视示意图; Figure l is a schematic top view of a 3 b power type flip-chip LED package structure imitation lumen;

图2—1 a为本发明的侧壁引线型倒装LED芯片封装结构剖面图; Leaded sidewall LED flip chip package structure 2-1 a cross-sectional view of the present invention;

图2—1 b为本发明的侧壁引线型倒装LED芯片封装结构俯视示意图; Leaded sidewall LED flip chip package structure of the present invention, FIG. 2-1 b is a schematic plan view;

图2_1 c为本发明的侧壁引线型倒装LED芯片封装结构后视示意图; FIG 2_1 schematic view of the rear side wall lead-type flip-chip LED package structure of the present invention, c;

图2—2 a为本发明的通孔引线型倒装LED芯片封装结构剖面图; Flip-chip LED package structure sectional view of the through hole of FIG. 2-2 a lead type of the present invention;

图2—2 b为本发明的通孔引线型倒装LED芯片封装结构俯视示意图; Leaded flip through hole LED chip package structure of the present invention, FIG. 2-2 b is a schematic plan view;

图2 — 2c为本发明的通孔引线型倒装LED芯片封装结构后视示意图; After a schematic view of a lead through hole type flip 2c LED chip package structure of the present invention - Figure 2;

图3 — 1 a为已加工好金属凸点的硅片剖面示意图; FIG 3 - 1 a wafer processing as well sectional schematic metal bumps;

图3 — 1 b为硅片与反光杯圆片键合连接剖面示意图; FIG 3 - 1 b is a silicon wafer and bonding the reflective cup connecting a schematic cross-sectional view;

图3 — 1 c为硅片背面开槽示意图; FIG 3 - 1 c is a schematic notched wafer backside;

图3—1 d为在硅槽内和硅片背面金属布线示意图; FIG. 3-1 d and a wiring groove in the silicon wafer back metal schematic;

图3 — 1 e为LED芯片倒装焊示意图; 图4一1 a为硅片反光杯槽和通孔示意图;图4_1 b为硅片正面和背面金属布线示意图; 图4 —1 c为LED芯片倒装焊示意图。 FIG 3 - 1 e is a schematic Flip Chip LED; FIG. 4 is a silicon wafer 1 a reflector cup schematic trenches and vias; FIG 4_1 b is a schematic view of the front and back silicon metal wiring; FIG LED chips 4 -1 c Flip Chip schematic. 具体实施方式 Detailed ways

以下结合附图及具体实施例对本发明发光二极管倒装焊集成封装结构及其封装方法进行详细地说明。 The following embodiments in conjunction with accompanying drawings and specific embodiments of the present invention is a light emitting diode integrated flip-chip packaging structure and packaging method will be described in detail.

本发明提供的发光二极管倒装焊集成封装结构及其封装方法。 The present invention provides a light emitting diode flip chip integrated packaging structure and packaging method. 该封装方法结构采用了硅集成电路和硅槽布线技术、圆片级键合技术以及倒装焊技术等, 形成了一种系统化、集成化和小型化的LED封装结构。 The method of packaging an integrated circuit structure using silicon and silicon groove wiring technique, wafer-level technology and flip chip bonding technology, the formation of a systematic, integrated and miniaturized LED packaging structure.

发光二极管倒装焊集成封装结构,以硅片衬底18直接作为LED芯片1的整个结构支撑的表面贴装支架和散热通道,将至少一个LED芯片1直接倒装焊接在具有反光杯的硅片衬底上。 Integrated flip-chip light emitting diode package structure, the silicon substrate 18 directly to the structure as a whole, supporting the LED chip 1 and the surface mount bracket cooling channel, at least one LED chip flip-chip bonded directly to a silicon wafer having a reflector cup on the substrate. 硅片衬底18的正面设置有正面电极连接层15, 正面电极连接层15从硅片衬底的正面引到背面与硅片衬底18背面的电极金属焊盘20连接,至少一个LED芯片直接通过金属凸点14倒装焊接在具有反光杯的硅片衬底的正面电极连接层15上。 The wafer front side substrate 18 is provided with a positive electrode connection layer 15, front electrode lead connection layer 15 from the front side of the silicon substrate to the back surface of back electrode metal pad 18 and the silicon substrate 20 is connected to the at least one LED chip directly a front surface electrode layer is connected by flip-chip bonding the metal bumps 14 in the silicon substrate 15 having a reflector cup. 在硅片衬底18集成有LED芯片1所需的各种配套电路,如发光二极管保护电路、电源驱动和转换电路等。 In the silicon substrate 18 supporting a variety of integrated circuit chips required for an LED, light emitting diode protection circuit, and the driving power conversion circuit. 硅片衬底18 的背面设置有背面导热金属焊盘19。 Wafer backside of the substrate 18 is provided with a heat conductive backside metal pad 19. 实施例l Example l

如图2-la和图2-lb所示,发光二极管倒装焊集成封装结构,以硅片衬底18 直接作为LED芯片1的整个结构支撑的表面贴装(SMD)支架和散热通道。 As shown in FIG. 2-la and 2-lb, integrated flip-chip light emitting diode package structure, directly to the silicon substrate 18 as a whole, the structure of the LED chip 1 is supported by surface mount (SMD) and a heat dissipating channel bracket. 在硅片衬底18上形成有反光杯,硅片衬底18的正面设置有正面电极连接层15, 至少一个LED芯片1直接通过金属凸点14倒装焊接在具有反光杯的硅片衬底18的正面电极连接层15上,实现电连接。 Is formed with a reflector, the front side the silicon substrate 18 is provided with a positive electrode connection layer 15, the at least one LED chip 1 is directly flip-chip bonded through metal bumps 14 in the silicon substrate having a reflective cup on a silicon wafer substrate 18 18 is connected to the front electrode layer 15, electrically connected. 硅片衬底18的正面电极连接层15通过硅槽侧壁引线的方式与设置在硅片衬底18侧面和背面的电极金属焊盘20连接。 An electrode metal pad 18 is connected to the back surface side of the silicon substrate 20 and the front electrode connection layer 18 of the silicon substrate 15 through the silicon wire groove sidewall manner provided. 正面电极连接层15与电极金属焊盘20在硅片衬底18侧壁实现电连接。 Connecting the front electrode layer 15 and the electrode metal pad 20 is connected electrically in the silicon substrate 18 side walls. 反光杯可以是一片反光杯圆片16与硅片衬底18通过圆片级键合连接在一起形成的。 Reflector cup may be a reflective cup 16 and wafer bonding together the silicon substrate 18 formed by wafer-level key. 反光杯圆片16与硅片衬底18之间是通过中间介质层17粘合连接在一起。 Reflective glass wafer 16 and the silicon substrate 18 between the dielectric layer 17 through an intermediate bonded together. 反光杯圆片16由已经加工好杯口和反光层组成,反光杯圆片16与硅片衬底18 的尺寸相当。 Reflective glass wafer 16 has been processed by the cup and a good reflecting layer, the size of the reflector cup 16 and the silicon wafer substrate 18 considerably. 反光杯圆片16为片状材料制成的,所用的材料可以是玻璃、塑料、 陶瓷、硅或者金属材料等。 Reflective glass wafer 16 is made of a sheet-like material, the material used may be glass, plastic, ceramic, silicon or metal material. 硅片衬底18背面采用硅加工工艺形成硅槽,用硅槽布线工艺在硅槽的两边侧壁和硅片衬底的背面布上所需的电极金属焊盘20,以实现电路从硅片衬底正面的电极连接层15连接到硅片衬底18的背面,形成表面贴装形式的焊盘结构。 The back surface of the substrate 18 silicon wafer processing technology to form a silicon groove, the groove silicon wiring process required on either side of the back surface of the silicon substrate and sidewall silicon groove cloth electrode metal pad 20, the circuit from the wafer to achieve the positive electrode connection layer of the substrate 15 is connected to the backside of the silicon substrate 18, is formed in the form of surface mount pad structure. 在硅片衬底18的背面还设置有导热金属焊盘19。 The back surface of the silicon substrate 18 is further provided with a heat-conducting metal pads 19.

图2-la和图2-lb中显示的是倒装了一个LED芯片的单晶粒的情况;对于多LED芯片模组来说,只是倒装多个LED芯片1在具有反光杯硅片衬底18上,' 其封装结构和制造方法与单芯片的情况完全相同。 It is shown in Figure 2-la and 2-lb in the case where the single crystal is a flip of a LED chip; for multi-chip LED modules is only 1 flip chip having a plurality of LED reflector cup silicon substrate the bottom 18, 'which is where the package structure and a manufacturing method the same as a single chip. 实施例2 Example 2

如图2-2a和图2-2b所示,发光二极管倒装焊集成封装结构,以硅片衬底18 直接作为LED芯片1的整个结构支撑的表面贴装(SMD)支架和散热通道,在硅片衬底18上形成有反光杯,硅片衬底18的正面设置有正面电极连接层15。 As shown in FIG. 2-2a and 2-2b, the light emitting diode is flip-chip integrated package structure to the silicon substrate 18 is directly supported by the entire structure as a surface mount (SMD) LED chip carrier and a cooling channel in is formed on the silicon substrate 18 with a reflective cup, the silicon substrate front surface 18 is provided with a positive electrode connection layer 15. 至少一个LED芯片1直接通过金属凸点14倒装焊接在具有反光杯的硅片衬底18的正面电极连接层15上,实现电连接。 The at least one LED chip 1 is directly flip-chip bonding through the metal bumps 14 on the front surface electrode connected to the silicon substrate layer 18 having a reflective cup 15, an electrical connection. 正面电极连接层15通过硅片衬底通孔引线的方式与设置在硅衬底18背面的电极金属焊盘20连接。 Backside electrode metal pad attached to a silicon substrate layer 1820 the front electrode lead is connected to the silicon substrate by way of the through hole 15 provided. 反光杯可以是通过直接在硅片衬底18上形成硅槽21作为反光杯口,硅槽21的表面沉积上高反射率的金属层作为反光层,反光金属层可以是铝或银等。 Reflector cup may be formed by a groove directly on a silicon wafer substrate 18 as a reflector cup 21, the groove surface of the silicon 21 is deposited on the metal layer having a high reflectance is used as reflecting layer, the metal reflecting layer may be of aluminum or silver. 硅片衬底18的表面加工出反光杯所需的硅槽21,然后在硅槽21的底部开出两个通孔22,通孔22 穿通到硅片衬底18的背面。 The surface of the silicon substrate 18 is processed by the reflector and a desired silicon groove 21, the silicon at the bottom of the groove 21 and then out of the two through holes 22, 22 through the through hole to the back surface 18 of the silicon substrate. 在硅槽21的底部形成与LED芯片电极连接所需的正面电极连接层15和通孔内金属布线17,同时在硅片衬底18的背面沉积上贴装用的电极金属焊盘20和背面导热金属焊盘19,形成表面贴装结构。 15 and the through-hole 17 is formed a metal wiring layer connected to the front electrode connected to the LED chip electrodes required for the bottom silicon groove 21, and a back electrode metal pad 20 while mounted on a back surface of the silicon substrate 18 is deposited thermally conductive metal pad 19, forming a surface-mount structure.

图2-2a和图2-2b中显示出的是倒装了一个LED芯片的单晶粒的情况;对于多芯片模组来说,只是倒装多个LED芯片在反光杯中,其封装结构和制造方法与单芯片的情况完全相同。 It shows 2-2a and 2-2b FIG flip is a case where a single crystal of the LED chip; for multichip module, a plurality of LED chips are flip-only reflective cup enclosing structure and the case of single-chip manufacturing method of the same.

以上硅槽侧壁引线和硅片衬底通孔引线两种引线方式的结构,其整个制造过程基本相似。 Leads and sidewall silicon substrate via a lead wire structure of the above two kinds of ways of the silicon groove which is substantially similar to the entire manufacturing process. 只是两种引线结构在制造上有较大差别。 Just Two lead structure are quite different in manufacturing. 下面对基于硅工艺的发光二极管倒装焊集成封装方法进行详细地说明。 Next, the flip chip packaging method of LED-based integrated silicon process will be described in detail.

基于硅工艺的发光二极管倒装焊集成封装方法,其总体制作步骤如下:(1) 进行LED芯片制造;(2)制作硅片衬底,在硅片衬底上形成反光杯;(3)将LED. 芯片的直接倒装焊硅片衬底内;(4)最后进行LED的后封装。 Silicon-based light-emitting diode flip chip integrated package process method, overall production steps are as follows: (1) LED chip manufacturing; (2) Production of silicon wafer substrate, forming a reflective cup on a silicon substrate; (3) the LED chip is directly flip-chip silicon substrate; and. (4) Finally, after the LED package. 实施例3: Example 3:

如图3-la、图3-lb、图3-lc、图3-ld和图3-le所示,这里主要是通过硅槽侧壁引线的结构实现正面电极连接层15与电极金属焊盘20的连接。 FIG 3-la, FIG. 3-lb, FIG. 3-lc, shown in FIG. 3-le and 3-ld, there is to achieve positive electrode lead connecting layer through the sidewall of the silicon structure and the electrode metal pad 15 groove connection 20. 制作步骤如下: Production steps are as follows:

(1) 进行LED芯片1制造。 (1) LED chip 1 is manufactured. LED芯片1是将蓝宝石衬底上生长有多层氮化镓的外延片,经过光刻、刻蚀、金属层沉积和钝化层保护等一系列工艺步骤,' 将LED芯片1的P电极2和N电极3制作出来。 LED chip 1 is a multilayer of gallium nitride epitaxial growth on a sapphire substrate sheet, through lithography, etching, depositing a metal layer and a passivation layer for protecting a series of process steps, 'the P electrode of the LED chip 1 of 2 and N-electrode 3 made out.

(2) 制作硅片衬底18,在硅片衬底18上形成反光杯。 (2) Preparation of silicon substrate 18, a reflective cup is formed on a silicon substrate 18. 制作步骤如下:a、 首先制作硅片衬底18和反光杯圆片16; b、然后将有着相同特征尺寸的反光杯圆片与硅片衬底进行位置对准,进行圆片级的键合,使硅片衬底18和反光杯圆片16连接在一起,圆片级键合可以是采用中间介质层17连接,并通过回流固 Production steps are as follows: a, first make the silicon substrate wafer 18 and the reflector cup 16; b, then have the same feature size of reflector cup and the silicon substrate wafer positioning is performed, a wafer-level bonding , together with the wafer substrate 18 and reflective glass wafer 16, wafer level bonding can be connected using an intermediate dielectric layer 17, and through the solid was refluxed

化工艺实现,也可以是通过其它工艺方法实现。 Implemented process, may be achieved by methods other processes. c、在硅片衬底18的背面开出凹槽。 c, the back surface of the silicon substrate out of the recess 18. d在硅片衬底18的凹槽内和背面金属布线。 d in the recess of the silicon substrate 18 and the back metal wiring.

硅片衬底18的制作完全与硅集成电路工艺兼容,通过光刻、刻蚀、硅掺杂、 介质层沉积等工艺制作出所需的保护和驱动电路,同时形成与LED芯片P电极2和N电极3相对应的正面电极连接层15。 Production of the silicon substrate 18 is fully compatible with silicon integrated circuit technology, by photolithography, etching, doped silicon, the dielectric layer deposition process to produce the desired protection and drive circuit, is formed simultaneously with the electrodes of the LED chip 2 and P N 3 electrodes of the front electrode 15 corresponding to the connection layer. 然后可以是进行金属凸点14的加工。 14 may then be processed metal bump. 金属凸点14可以制作在硅片衬底18的正面电极连接层15之上,也可以制作于LED芯片1的P电极和N电极上;但无论是制作在正面电极连接层15或者LED 芯片1的P电极和N电极,都需要在圆片制造工艺完成后再进行一步金属凸点的制作。 Metal bumps 14 can be made on the front electrode connection layer 18 is the silicon substrate 15, may be fabricated on the P and N electrodes LED chip 1; but whether it is produced in the front electrode connection layer 15 or the LED chip 1 the P and N electrodes, need to be made in one step after the metal bumps wafer manufacturing process is completed. 金属凸点14的材料可以为铅、锡、金、镍、铜中单一的材料、多层材料或者合金,常用的金属凸点14的高度为2~60微米;金属凸点14的加工工艺,' 可以是电镀工艺,也可以是机械栽植或者其它方式等。 Material of the metal bumps 14 may be lead, tin, gold, nickel, and copper single material, an alloy or a multilayer material, the height of the metal bumps 14 used is 2 to 60 micrometers; a metal bump process 14, 'may be a plating process, or may be otherwise mechanically planting or the like. 正面电极连接层15—侧的材料可以为镍、金、银、铝、钛、钨、镉等中单一的材料、多层材料或者合金,焊盘的厚度在0.5〜10微米之间,最优值是2微米。 A front-side electrode material 15 may be connected in a single layer of material such as nickel, gold, silver, aluminum, titanium, tungsten, cadmium, alloy or multi-layer material, the thickness of the pad between 0.5~10 microns, and most value is 2 microns.

反光杯圆片16的材料可以是玻璃、塑料、陶瓷、硅、金属材料等,可以采用开模熔注或烧结的方式制作。 Wafer material reflective cup 16 may be glass, plastic, ceramic, silicon, metal materials, melt injection mold embodiment may be employed or prepared sintered. 根据反光杯厚度的要求,也可以选择合适材料的板材,通过精密加工的方式制作出反光杯口。 The thickness requirements of the reflective cup, the sheet can also choose suitable materials, to produce reflective cup by way of precision machining. 反光杯圆片16制作完成后,可以通过蒸发、溅射或离子镀等方式在反光杯口一侧沉积一层或多层金属层,以达到所需的反光要求。 After finished reflective glass wafer 16, and the like may be coated by evaporation, sputtering or ion reflector cup port side manner depositing one or more metal layers, to achieve the desired reflective requirements.

反光杯圆片16与硅片衬底18的键合连接。 Reflective glass wafer 16 and the silicon substrate 18 is bonded bond connection. 在衬底硅片18在表面已加工好金属凸点14后,将有着相同特征尺寸的反光杯圆片16与硅片衬底18进行位置对准,接着进行圆片级的键合,使硅片衬底18和反光杯圆片16连接在一起, After the surface of the silicon wafer substrate 18 is processed good metal bumps 14, will have the same feature size of the wafer 16 and the reflector cup 18 for aligning the silicon substrate, followed by wafer level bonding, the silicon sheet substrate wafer 18 and the reflective cup 16 are connected together,

如图3-lb所示。 3-lb shown in FIG. 硅片衬底18和反光杯圆片16的圆片级键合可以是采用中间介质层17连接,并通过回流固化工艺实现,也可以是通过其它工艺方法实现。 Silicon wafer substrate 18 and the reflective cup 16 is bonded wafer-level bond may be connected using an intermediate dielectric layer 17, and is achieved by reflux for curing process, may be achieved by methods other processes.

硅片衬底18的背面开出凹槽。 The back surface of the silicon substrate 18 out of the groove. 硅片衬底18的背面开出凹槽是在硅片衬底18和反光杯圆片16完成连接后,从硅片衬底18的背面沿封装结构单元间的划. 片道位置开出凹槽,如图3-lc所示。 The back surface of the silicon substrate 18 is out of the recess in the silicon substrate wafer 18 and the reflective cup 16 complete the connection from the back surface of the silicon substrate 18. The chip groove track position along the stroke between the open package structure units , 3-lc shown in FIG. 开凹槽的方法可以采用硅湿法或硅干法腐蚀工艺,也可以采用精密加工的方法。 The method may be grooved silicon wet or dry silicon etching processes, precision machining method may also be employed. 凹槽的深度要超过硅片衬底18的正面电极连接层15的引线位置,使硅片衬底18的正面电极连接层15露出来,以便进行电连接。 The depth of the recess to the front electrode over the silicon substrate 18 is connected to a lead position of the layer 15, so that the silicon substrate 18 of the front electrode connection layer 15 is exposed to, for electrical connection.

在硅片衬底18的凹槽内和背面金属布线。 In the recess of the silicon substrate 18 and the back metal wiring. 采用布线工艺在硅片衬底18的凹槽内实现电极金属焊盘20布线,电极金属焊盘20与硅片衬底18的正面电极连接层15电连接,同时电极金属焊盘20还要与硅片衬底18绝缘,。 Process implemented using a wiring electrode pad 20 metal wiring, an electrode metal pad electrode 20 and the front surface of the silicon substrate 18 is electrically connected to the connection layer 15 within the recess of the silicon substrate 18, while the electrode metal pad 20 and also an insulating silicon substrate 18. 从而将硅片衬底18正面的LED芯片1所需要的两个正面电极连接层15沿凹槽侧壁连接到硅片衬底18的背面的电极金属焊盘20,如图3-ld所示。 Two front electrode layer connected to the silicon substrate 18 so that the front surface of the LED chip 115 is connected to the required back surface of the silicon substrate 18 along the sidewalls of the recess electrode metal pad 20, as shown in Figure 3-ld . 每个LED封装单元的硅片衬底18的背面将形成如图2-lc所示三个金属区域,包括两个电极金属焊盘20区域和一个背面导热金属焊盘19区域,从而实现了LED的热电分离。 The back surface of each silicon substrate 18 of the LED package is formed of three unit metal region shown in FIG. 2-lc, the region 20 comprises two electrode pads and the metal back surface of a thermally conductive metallic pad area 19, thereby realizing the LED thermoelectric separation. 最后在侧壁电极金属焊盘20和硅片衬底18背面导热金属焊盘19的表面涂上保护和阻焊涂层,只露出表面贴装(SMD)焊所需的背面三个金属区域的金属焊盘。 Finally, solder and coated with a protective coating on the metal surface of the electrode pads 20 and the sidewall of the silicon substrate 18 of the back surface heat-conducting metal pads 19, only the exposed back surface region of the desired weld metal three surface mount (SMD) of metal pad. 通过以上的工艺步骤,基本形成了LED封装所需的支架和反光杯。 Through the above process steps, the basic form of the desired LED package reflective cup and the stent.

(3)将LED芯片1直接倒装焊接于硅片衬底18内。 (3) flip-chip bonding the LED chip 1 is directly on the silicon substrate 18. 将已制作好的LED圆片先切割成单颗的LED芯片1,然后通过自动化的倒装焊设备将一个个的LED 芯片1倒装焊接到反光杯中的硅片衬底18上,如图3-le所示。 The ready-made LED wafer to cut a single LED chip, the flip chip and then through the automated device of one LED chip 1 is flip-chip bonded to the silicon substrate the reflective cup 18, as shown in 3-le FIG. LED芯片1是通过金属凸点14直接倒装焊接到具有反光杯的硅片衬底18的正面电极连接层 LED chip 1 through the metal bumps 14 are flip-chip bonded directly to the silicon substrate having the reflective cup 18 of the front electrode connection layer

15表面。 Surface 15. 倒装焊过程实际是金属凸点14同LED芯片1的P电极和N电极的金属焊盘的键合过程,可以是用回流悍的方式或是用加热后加超声波的焊接工艺。 Flip actually process the metal bump 14 and the electrode P of the LED chip with the bonding process the metal pad electrode 1 is N, can be defended with refluxing manner with a plus or ultrasonic welding process after heating. LED芯片可以是单一的一个芯片,或者是两个或两个以上芯片形成的阵列模组(如1x2、 1x3、 1x4、 2x2、 3x3......等);芯片可以是不同尺寸、不同颜色芯片 LED chip may be a single chip or array or a two modules (e.g., 1x2, 1x3, 1x4, 2x2, 3x3 ...... etc.) formed by two or more chips; chip may be different sizes, different color chips

的组合。 The combination. 相应的封装结构的外形可以是方形、长方形或其它要求的形状。 Shape corresponding the shape of the package structure may be square, rectangular or other requirements.

(4)最后进行LED的后封装。 (4) Finally, after the LED package. 整个圆片表面所有单元都完成LED芯片1的倒装焊接工艺后,可以将圆片切割成一个个的LED封装单元(单个LED晶粒或具有多个芯片的模组),然后再进行后面的荧光粉涂敷、封胶等封装工艺,这些工艺同目前业界的工艺完全相同。 After the entire surface of the wafer is completed for all the LED chip units 1 is flip-chip bonding process, the wafer may be cut into one LED package unit (single LED dies or chips having a plurality of modules), then to the back phosphor coating, plastic closures and other packaging processes, these processes are identical with the current industry process. 也可以接着在整个圆片表面完成荧光粉涂敷、 封胶等工艺,甚至可以在表面贴上片状的透镜(Lens)片后,再进行切割划片。 After the phosphor coating may be followed by complete, plastic closures and other processes in the entire wafer surface, even a sheet-like paste lenses (Lens) sheet surface, and then cut dicing. 划片后的LED封装单元可以直接贴装于PCB板上作为白光、蓝光或绿光LED灯. 使用。 After dicing the LED package unit may be mounted directly on the PCB board as white, blue or green LED lights use. 实施例4: Example 4:

如图4-la、图4-lb和图4-lc所示,这里主要是通过硅片衬底18通孔引线的结构实现正面电极连接层15与电极金属焊盘20的连接。 FIG 4-la, 4-lc shown in FIG. 4-lb and here is to achieve a front electrode connection layer 15 and the electrode metal pad 20 by the structure 18 of the silicon substrate through-hole leads. 制作步骤如下- Production steps are as follows -

(1) 进行LED芯片1制造。 (1) LED chip 1 is manufactured. .LED芯片1实施3所述的相同。 3 .LED chip 1 according to the same embodiment.

(2) 制作硅片衬底,在硅片衬底上形成反光杯。 (2) Production of silicon wafer substrate, forming a reflective cup on a silicon substrate. 制作步骤如下:a、在硅片衬底18上形成硅槽反光杯口和底部通孔。 Production steps are as follows: a, forming a silicon groove bottom reflector cup and the through-hole 18 in the silicon substrate. b、然后在硅片衬底18的正面和背面进. 行金属布线。 b, then the front and back into the silicon substrate 18. The metal wiring line.

在硅片衬底18上形成硅槽反光杯口和底部通孔的步骤如下:如图4-la所示, 首先在硅片衬底18表面形成适当的介质层,并开出要进行硅刻蚀的窗口。 The step of forming a silicon groove bottom reflector cup and the through hole in the silicon substrate 18 as follows: As shown in FIG. 4-la, is first formed in a suitable dielectric layer 18 the surface of the silicon substrate, and silicon to be carved out eclipse window. 然后通过介质层的掩蔽进行硅的腐蚀,腐蚀出所需的反光杯槽21和底部通孔22。 Then etching a silicon dielectric layer by masking, etching the required reflector cup 21 and the groove bottom of the via 22.

在硅片衬底18的正面和背面进行金属布线的步骤如下:如图4-lb所示,首先在硅片衬底18正面的硅槽21内形成电极连接金属层15和杯壁反光层,并通过腐蚀形成相应的图形;然后在硅片衬底18的背面沉积电极金属焊盘20和背面导热金属焊盘19,实现底部通孔22内金属与正面电极金属层15的电性接触, 完成电连接,同时在背面形成表面贴^M需的电极金属焊盘20和背面导热金属焊盘19的UBM金属层,实现表面贴装结构。 Metal wiring step in front and rear surfaces of the silicon substrate 18 as follows: As shown in FIG 4-lb, first metal layer forming the electrode connection layer 15 and the reflective cup wall 18 in front of the silicon substrate 21 of silicon groove, and the corresponding pattern is formed by etching; and depositing an electrode metal pad 20 and the back surface of the thermally conductive metal pad 19 on the back surface of the silicon substrate 18, to realize the inner bottom of the metal vias 22 electrically contact the metal layer and the front electrode 15, to complete electrically connected, while forming a surface mount ^ M for an electrode metal pad 20 and the back surface of the thermally conductive metal UBM pad metal layer 19 on the back surface to achieve a surface mount construction. 在正面电极金属层15上,还需一步进行金属凸点14的加工。 A metal layer on the front electrode 15, the need for further processing of the metal bump 14. 金属凸点14可以制作在硅片衬底18上的正面电极金属层15之上,也可以制作于LED芯片1的P电极和N电极上。 Metal bumps 14 can be formed on the silicon substrate 18 on the front electrode metal layer 15 may be fabricated on the P and N electrodes of the LED chip 1. 如果制作在LED芯片1上,则需要在(1)步骤LED芯片1制作完成后增加一步金属凸点14制作工艺;如果制作在硅片衬底18上,则需要在硅片衬底18金属布线过程中增加一步金属凸点14的制作;制作过程与实施方案3所述的相同。 If formed on the LED chip 1, it is necessary to (1) Step 1 LED chip finished metal bump 14 further increases the production process; if formed on the silicon substrate 18, metal wiring 18 is required in the silicon substrate production increased during step 14 of the metal bump; 3 are the same and the production process embodiment. 通过以上的工艺步骤,已经形成了LED封装所需的支架和反光杯。 Through the above process steps, it has been formed and the desired LED package reflective cup holder.

(3) 将LED芯片的直接倒装焊硅片衬底内。 (3) the LED chip is directly flip-chip within the silicon substrate. 具体过程与实施例3所述的内容相同,在此不再赘述。 DETAILED the same procedure described in Example 3 content, are not repeated here.

(4) 最后进行LED的后封装。 (4) Finally, after the LED package. 具体过程与实施例3所述的内容相同,在此不 DETAILED the same procedure described in Example 3, the content, which is not

再赘述。 Then repeat. . .

通过以上的技术方案实现了本发明的LED封装结构。 Achieved LED package structure of the present invention, the above technical solution. 本发明省略了固晶和 The present invention will be omitted and the crystalline solid

悍金线的步骤,有利于后工序的荧光粉涂敷和封胶顺利进行,提高了芯片特别. 是多芯片模组的连接可靠性。 Step defended gold wire, after the step conducive phosphor coating and sealant smoothly, especially to improve the chip. Reliability is connected to the multichip module. 同时由于倒装的LED芯片直接通过硅片散热到下面的金属PCB板,解决了功率型芯片的散热问题。 And because flip LED chip directly heat the wafer to the underlying metal PCB, to solve the problem of power dissipation of the chip type. 整个加工过程都是圆片级操作,方便快捷,易于实现自动化大生产。 The whole process is wafer-level operation, convenient, easy to automate large-scale production. 整个封装结构很小,使大功率LED的封装特别是多芯片模组的封装更加趋于小型化,如果再加上硅片上集成的电源 The whole package is small, so that high-power LED package especially multichip module package become more compact, if integrated on silicon together with the power supply

驱动和LED保护电路,将为大功率LED照明提供一个系统的、集成的封装解决方案。 And an LED drive circuit protection, will provide a high power LED lighting systems, integrated packaging solutions. . .

以上所述仅为本发明的两个实施方案举例,并非限定本发明实施范围。 The above are only two embodiments of the present invention embodiment example, the scope of the present invention is not limited to the embodiments. 凡按照本发明权利要求保护范围所作的相似变化和修饰,均为本发明内容所涵盖。 Where the claims of the invention according to similar changes and modifications made to the scope of protection, are encompassed by the present invention. . .

Claims (10)

  1. 1、发光二极管倒装焊集成封装结构,其特征在于:以硅片衬底直接作为LED芯片结构支撑的表面贴装支架和散热通道,将至少一个LED芯片直接倒装焊接在具有反光杯的硅片衬底上。 1, integrated flip-chip light emitting diode package structure, comprising: directly to the silicon substrate as a structural support for the LED chips and surface mount bracket cooling channel, at least one LED chip is directly flip-chip bonding of silicon having a reflective cup sheet substrate.
  2. 2、 如权利要求1所述的发光二极管倒装焊集成封装结构,其特征在于:所述的硅片衬底的正面设置有正面电极连接层,正面电极连接层从硅片衬底的正面引到背面与硅片衬底背面的电极金属焊盘连接,至少一个LED芯片直接通过金属凸点倒装焊接在具有反光杯的硅片衬底的正面电极连接层上。 2, a light emitting diode as claimed in claim 1 integrated flip-chip packaging structure, wherein: the front side of the silicon substrate is provided with a front electrode connection layer, the front electrode lead connection layer from the front side of the silicon substrate to the back surface of the back surface of the electrode metal pad connected to the silicon substrate, the at least one LED chip through a metal bump directly on the front electrode layer is connected in a flip-chip bonding a silicon wafer substrate having a reflective cup.
  3. 3、如权利要求1或2所述的发光二极管倒装焊集成封装结构,其特征在于:所述的硅片衬底上集成有LED所需的配套电路,硅片衬底的背面设置有背面导热金属焊盘。 The back support integrated circuit of the LED on the desired silicon substrate, the back surface of the silicon substrate is provided with: 3, a light emitting diode as claimed in claim 1 or 2, wherein the flip-chip integrated package, wherein thermally conductive metal pad.
  4. 4、 如权利要求2所述的发光二极管倒装焊集成封装结构,其特征在于:所述的正面电极连接层从硅片衬底的正面引到背面与硅片衬底背面的电极金属焊盘连接的方式是硅槽侧壁引线或者硅片衬底通孔引线的方式。 4, the light emitting diode as claimed in claim 2, integrated flip-chip package, wherein: the front electrode lead is connected from the front side the silicon substrate layer to the back surface of the electrode metal pad and the back surface of the substrate wafer It is connected to the groove side wall silicon or silicon substrate via a lead wire manner.
  5. 5、 如权利要求1或2所述的发光二极管倒装焊集成封装结构,其特征在于: 所述的反光杯是通过直接在硅片衬底上形成硅槽作为反光杯口,硅槽表面沉积金属层作为反光层。 5, a light emitting diode as claimed in claim 1 or 2, wherein the flip-chip integrated package, characterized in that: said reflector cup is formed by a groove directly on a silicon wafer substrate as a reflective cup, the surface of the deposited silicon groove metal layer as a reflecting layer.
  6. 6、 如权利要求1或2所述的发光二极管倒装焊集成封装结构,其特征在于:所述的反光杯是反光杯圆片与硅片衬底之间是通过中间介质层粘合连接在一起。 6, a light emitting diode as claimed in claim 1 or 2, wherein the flip-chip integrated package, wherein: said reflective cup is between the reflector cup and the silicon substrate wafer are bonded through an intermediate dielectric layer is connected together. . .
  7. 7、 如权利要求2所述的发光二极管倒装焊集成封装结构,其特征在于:所述的金属凸点是制造在LED芯片的P电极和N电极上;或者金属凸点是制造在. 硅片衬底上,LED芯片的电极焊盘倒装直接与硅片衬底的金属凸点连接。 7, the light emitting diode as claimed in claim 2, integrated flip-chip package structure, characterized in that: said metal bump is manufactured on P and N electrodes of the LED chip; or metal bumps are fabricated of silicon on the substrate sheet, LED flip chip electrode pads directly connected to the silicon substrate and the metal bump.
  8. 8、 一种发光二极管倒装焊集成封装方法,其特征在于:制作步骤如下:(1) 进行LED芯片制造;(2)制作硅片衬底,在硅片衬底上形成反光杯;(3)将LED 芯片直接倒装焊在硅片衬底内;(4)进行LED的后封装。 8, a light emitting diode flip-chip integrated package, characterized in that: the following production steps: (1) LED chip manufacturing; (2) Production of silicon wafer substrate, forming a reflective cup on a silicon substrate; (3 ) the LED chip is directly flip-chip in a silicon substrate; (4) after the LED package.
  9. 9、 如权利要求8所述的发光二极管倒装焊集成封装方法,其特征在于:所述的(2)歩骤包括的制作步骤如下:a、首先制作硅片衬底和反光杯圆片;b、然后将硅片衬底和反光杯圆片进行圆片级的键合,使硅片衬底和反光杯圆片连接在一起;c、在硅片衬底的背面开出凹槽;d、在硅片衬底的凹槽内和背面金属布线。 9, the light emitting diode as claimed in claim 8, integrated flip-chip packaging method, wherein: said step of making (2) ho step comprises the following: a, first make the silicon substrate wafer and the reflective cup; B, then the silicon substrate and the reflective cup wafer is wafer level bonding the silicon wafer substrate and the reflective cup are connected together; C, the back surface of the silicon substrate out of a recess; D , in the recess of the silicon substrate and the back metal wiring. ' '
  10. 10、 如权利要求8所述的发光二极管倒装焊集成封装方法,其特征在于:所述的(2)步骤的包括的制作步骤如下:a、在硅片衬底上形成硅槽反光杯口和底部通孔;b、然后在硅片衬底的正面和背面进行金属布线。 10, the light emitting diode as claimed in claim 8, integrated flip-chip packaging method, wherein: said creating step comprises the step (2) as follows: a, a silicon groove is formed in the reflective cup on a silicon wafer substrate and the bottom of the via; b, then a metal wiring in the front and back of the silicon substrate.
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CN102661496A (en) * 2012-04-09 2012-09-12 深圳市华星光电技术有限公司 LED (light-emitting diode) light source and corresponding backlight module
CN102661496B (en) * 2012-04-09 2015-06-17 深圳市华星光电技术有限公司 LED (light-emitting diode) light source and corresponding backlight module
CN103579010A (en) * 2012-08-08 2014-02-12 深南电路有限公司 Method for manufacturing packaging product with metalized side wall
CN103579010B (en) * 2012-08-08 2016-12-21 深南电路有限公司 Making one kind of a metal side wall of the packaging product
CN102832322A (en) * 2012-09-03 2012-12-19 歌尔声学股份有限公司 Light emitting diode device
CN103137831A (en) * 2013-02-21 2013-06-05 深圳市瑞丰光电子股份有限公司 Light-emitting diode (LED) lamp and encapsulation method thereof
CN103337578A (en) * 2013-05-24 2013-10-02 袁灵 Method and structure of upright-installed dual-electrode chip inverted pasting application
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CN104953007A (en) * 2014-03-26 2015-09-30 贺喜能源股份有限公司 Light-emitting diode having a silicon submount and light-emitting diode lamp
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