CN110707203A - Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device - Google Patents
Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device Download PDFInfo
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- CN110707203A CN110707203A CN201910830127.9A CN201910830127A CN110707203A CN 110707203 A CN110707203 A CN 110707203A CN 201910830127 A CN201910830127 A CN 201910830127A CN 110707203 A CN110707203 A CN 110707203A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention provides a luminescent device, a manufacturing method thereof and a luminescent device module comprising the luminescent device, wherein the luminescent device comprises a chip support and a chip arranged on the chip support, and the chip support comprises: the device comprises an insulating substrate, a first electrode and a second electrode, wherein a first surface and a second surface which are opposite to each other are arranged on the insulating substrate; a first support electrode and a second support electrode disposed on the second surface, a distance between the first support electrode and the second support electrode correspondingly matching an electrode distance of the mounting substrate; a first die bond electrode and a second die bond electrode disposed on the first surface; a first electrical structure and a second electrical structure disposed within an insulating substrate; the chip is fixedly arranged on the upper part of the chip support, and two electrodes of the chip are respectively and electrically connected with the first die bonding electrode and the second die bonding electrode. The light-emitting device can effectively solve the problems of difficult die bonding and short circuit caused by the fact that the electrode spacing of the chip is small and the electrode spacing on the mounting substrate is not matched.
Description
Technical Field
The invention relates to the technical field of semiconductor lighting, in particular to a light-emitting device, a manufacturing method thereof and a light-emitting device module comprising the light-emitting device.
Background
With the increase of the integrated level of the integrated circuit, the packaging technology of the chip is more and more diversified, because the flip chip technology has the advantages of shortening the interconnection length in the package, further being capable of better adapting to the development requirement of high integration, and being widely applied to the field of chip packaging at present.
As shown in fig. 1, the flip chip technique is to directly form chip electrodes 11 on a chip 10 as input and output terminals, to solder the chip electrodes to electrodes 31 of a mounting board 30 via a solder paste 20 in a flip chip manner, and to electrically connect the input terminals and the output terminals to the electrodes 31 of the mounting board 30, respectively, thereby electrically connecting the chip 10 and the mounting board 30.
As the demand for pixels on the display panel is increasing, the pixel pitch (pitch) is required to be smaller and smaller, which requires the chip to be made smaller and smaller. With the continuous reduction of the chip size, the pad pitch between the two electrodes 11 on the chip 10 is continuously reduced to less than 50 μm, even less than 30 μm. At present, the pitch of the electrodes 31 on the mounting substrate 30 is more than 50 μm, and the mismatching of the pitch of the chip electrode pads and the electrodes on the mounting substrate causes the abnormal proportion of the die bonding of the bracket to also rise sharply. Therefore, it is desirable to provide a light emitting device, a method for manufacturing the same, and a light emitting device module including the same to solve the abnormal die bonding problem caused by the mismatch between the smaller and smaller chip pad pitch and the electrode pitch on the mounting substrate.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a light-emitting device, a manufacturing method thereof and a light-emitting device module comprising the light-emitting device, so as to solve the problem of abnormal die bonding caused by the fact that the distance between chip bonding pads is smaller and the distance between electrodes on a mounting substrate is not matched.
According to a first aspect of the present invention, there is provided a light emitting device comprising a chip holder and a chip mounted on the chip holder, the chip holder comprising:
the device comprises an insulating substrate, a first electrode and a second electrode, wherein a first surface and a second surface which are opposite to each other are arranged on the insulating substrate;
a first support electrode and a second support electrode disposed on the second surface, a distance between the first support electrode and the second support electrode correspondingly matching an electrode distance of a mounting substrate;
the first die bonding electrode and the second die bonding electrode are arranged on the first surface, are insulated and spaced from each other and can be electrically connected and fixed with the two electrodes of the chip correspondingly;
a first electrical structure and a second electrical structure disposed within the insulating substrate; the first electrical connection structure electrically connects the first support electrode and the first die attach electrode; the second electrical connection structure electrically connects the second support electrode and the second die attach electrode;
the chip is fixedly arranged on the upper part of the chip support, and two electrodes of the chip are respectively and electrically connected with the first die bonding electrode and the second die bonding electrode.
Preferably, the insulating substrate is provided with a first connection hole and a second connection hole which are penetrated through; an upper end opening of the first connection hole is arranged on the first surface covered by the first die bond electrode, and a lower end opening of the first connection hole is arranged on the second surface covered by the first support electrode; an upper end opening of the second connecting hole is formed in the first surface covered by the second die bond electrode, and a lower end opening of the second connecting hole is formed in the second surface covered by the second support electrode; the first electrical connection structure is disposed within the first connection aperture; the second electrical connection structure is disposed within the second connection aperture.
Further, the first and second electrical structures are metallic conductive layers deposited within the first and second connection holes, respectively.
Preferably, the gap width D3 between the first and second stent electrodes is not less than 50 μm.
Preferably, the gap width D2 between the first die bonding electrode and the second die bonding electrode is not more than 50 μm.
Further, the gap width D2 between the first die bond electrode and the second die bond electrode is less than or equal to 30 μm.
Preferably, the maximum length dimension L2 of the chip support is 1.1-1.5 times of the length dimension L1 of the chip.
Preferably, the first die bond electrode and/or the second die bond electrode are a metal adhesion layer, a eutectic layer and a surface protection layer in sequence from the first surface side to the top.
Preferably, an insulating layer is filled in a gap between the first die bonding electrode and the second die bonding electrode.
Preferably, the chip is a flip chip, and two electrodes of the flip chip are mounted on the first die attach electrode and the second die attach electrode by bonding or die attach adhesive fixing and reflow soldering.
Preferably, the chip is a vertical chip, a chip insulating layer is wrapped around the vertical chip, an upper electrode and a lower electrode of the vertical chip are exposed outside the chip insulating layer, the lower electrode is connected with the second die bonding electrode, and the upper electrode is electrically connected to the second die bonding electrode through a side-lead electrical connection structure.
Further, the side lead electric connection structure comprises a first electric connector, a second electric connector and a third electric connector, wherein the first electric connector is fixed at the upper end of the second electric connector and extends out to one side to be fixedly and electrically connected with the upper electrode; the third electric connector is fixed at the lower end of the second electric connector and is fixedly and electrically connected with the first die bonding electrode.
According to a second aspect of the present invention, there is provided a method of manufacturing a light emitting device, comprising the steps of:
providing a chip support, the chip support comprising:
the device comprises an insulating substrate, a first electrode and a second electrode, wherein a first surface and a second surface which are opposite to each other are arranged on the insulating substrate;
a first support electrode and a second support electrode disposed on the second surface, a distance between the first support electrode and the second support electrode correspondingly matching an electrode distance of a mounting substrate;
the first die bonding electrode and the second die bonding electrode are arranged on the first surface, are insulated and spaced from each other and can be electrically connected and fixed with the two electrodes of the chip correspondingly;
a first electrical structure and a second electrical structure disposed within the insulating substrate; the first electrical connection structure electrically connects the first support electrode and the first die attach electrode; the second electrical connection structure electrically connects the second support electrode and the second die attach electrode;
and providing an LED chip, wherein the chip is provided with a first electrode and a second electrode, and the LED chip is arranged on the bracket, wherein the first electrode of the LED chip is connected with the first die bonding electrode, and the second electrode is connected with the second die bonding electrode.
Further, the chip support is manufactured by the following method:
providing an insulating substrate;
etching at least one pair of connecting holes on the first surface of the insulating substrate;
depositing a metal conductive layer on the first surface in and above each connecting hole to form at least one die bonding electrode pair, wherein the die bonding electrode pair comprises a first die bonding electrode and a second die bonding electrode which are insulated and isolated from each other;
grinding and thinning the back of the insulating substrate until a second surface capable of exposing the connecting hole is formed;
and turning over the insulating substrate to enable the second surface to face upwards, and depositing a metal conducting layer on the second surface above the connecting hole to form at least one support electrode pair, wherein the support electrode pair comprises a first support electrode and a second support electrode which are insulated and isolated from each other. (ii) a
Preferably, the two electrodes on the chip are Sn electrodes fabricated by vapor deposition, chemical plating, electroplating, or the like.
Furthermore, the two Sn electrodes of the chip are correspondingly and fixedly electrically connected to the die bonding electrode pairs in a bonding or fluid die bonding adhesive and reflow soldering mode respectively.
Preferably, the gap width D2 between the first die bond electrode and the second die bond electrode is not more than 50 μm, the gap width D3 between the first stent electrode and the second stent electrode is not less than 50 μm, and D2< D3.
Further, a gap width D2 between the first die bond electrode and the second die bond electrode is less than or equal to 30 μm.
Preferably, the metal conductive layer deposited on the first surface and/or the second surface is made by evaporation or sputtering.
According to a third aspect of the present invention, the present invention provides a light emitting device module, comprising a mounting substrate and at least three light emitting devices mounted on the mounting substrate, wherein a first support electrode and a second support electrode of each light emitting device are respectively fixed on the mounting substrate correspondingly and electrically connected with an electrode of the mounting substrate.
Preferably, the chips of the at least three light emitting devices include at least a red chip, a green chip, and a blue chip.
Further, the blue light chip and the green light chip are flip chips, and the red light chip is a vertical chip.
Preferably, the first and second frame electrodes are mounted on the mounting substrate by fixing with die attach adhesive and then reflow soldering.
Preferably, the chips of the at least three light emitting devices are all blue light chips.
The light-emitting device is provided with the first support electrode and the second support electrode which are matched with the electrode spacing on the mounting substrate, and the first die bonding electrode and the second die bonding electrode which can be respectively and electrically fixed with the two electrodes of the chip correspondingly. The light-emitting device, the manufacturing method thereof and the light-emitting device module comprising the light-emitting device can break through the limitation that the die bonding is difficult when the spacing between the electrode pads of the chip is less than 50um, effectively improve the precision of the semiconductor preparation process, and have lower cost and higher yield compared with a mode of directly welding and installing the chip by adopting a high-density printing screen. In addition, when the light-emitting device is adopted, the electrode welding of the chip and the chip support can be carried out before the chip support is arranged on the mounting substrate, the welding operation is more flexible, the welding is convenient, the welding precision between the chip and the chip support can be effectively improved, the welding short circuit phenomenon caused by the direct welding of the chip and the mounting substrate can be effectively reduced, and the proportion of abnormal die bonding is greatly reduced.
Drawings
The features and advantages of the present invention will be more clearly understood by reference to the accompanying drawings, which are illustrative and not to be construed as limiting the invention in any way, and in which:
FIG. 1 is a schematic diagram of a flip chip mounting structure in the prior art;
FIG. 2 is a schematic view showing a structure of a light-emitting device of the present invention;
FIG. 3 is a schematic view showing another structure of a light-emitting device according to the present invention;
FIG. 4 is a schematic view of a light emitting device module according to the present invention;
FIG. 5 is a schematic view of another embodiment of a light emitting device module according to the present invention;
FIG. 6 is a schematic view showing the arrangement of light emitting devices in the light emitting device module according to the present invention;
fig. 7-18 illustrate the fabrication of a light emitting device of the present invention.
Reference numerals
10 flip chip
11 chip electrode
11a first chip electrode
11b second chip electrode
20 solder paste
30 mounting substrate
31 electrode of mounting substrate
40 chip support
41 Stent electrode pair
41a first holder electrode
41b second stent electrode
42 insulating substrate
421 connecting hole
421a first connection hole
421b second connecting hole
422a first surface
422b second surface
41-43a first electrical connection structure
41-43b second electrical connection structure
43 die bond electrode pair
43a first die bond electrode
43b second die bond electrode
431 surface protective layer
432 eutectic layer
433 metal adhesion layer
44 side lead connection structure
441 first electrical contact
442 second electrical contact
443 third electrical contact
45 insulating layer
50 chip insulation layer
101 vertical chip area to be mounted
10-40a/10-40b light emitting device
43-1 first photoresist layer
43-2 second photoresist layer
43-3 Metal conductive layer
41-1 third photoresist layer
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
In the following embodiments of the present invention, words indicating orientations, such as "upper", "lower", "left", "right", "horizontal", "vertical", etc., are referred to only to enable those skilled in the art to better understand the present invention, and should not be construed as limiting the present invention.
Example one
As shown in fig. 2, the present invention provides a light emitting device 10-40a, comprising a chip holder 40 and a chip 10 mounted on the chip holder 40, wherein the chip holder 40 comprises:
an insulating substrate 42, wherein a first surface 422a and a second surface 422b opposite to each other are arranged on the insulating substrate 42;
a first holder electrode 41a and a second holder electrode 41b provided on the second surface 422b, a pitch D3 of the first holder electrode 41a and the second holder electrode 41b being matched correspondingly to an electrode pitch of a mounting substrate (e.g., a PCB circuit board);
a first die bonding electrode 43a and a second die bonding electrode 43b which are arranged on the first surface 422a, are insulated and spaced from each other and can be electrically connected and fixed with two electrodes of the chip respectively;
first and second electrical structures 41-43a and 41-43b disposed within the insulating substrate 42; the first electrical connection structure 41-43a electrically connects the first holder electrode 41a and the first die bond electrode 43 a; the second electrical connection structure 41-43b electrically connects the second holder electrode 41b and the second die bond electrode 43 b.
The chip 10 is fixedly mounted on the upper portion of the chip support 40, and the two electrodes 11a and 11b of the chip 10 are electrically connected to the first die bonding electrode 43a and the second die bonding electrode 43b, respectively.
The chip 10 of the light emitting device of the present invention may be a flip chip or a vertical chip, in this embodiment, the chip 10 is a flip chip, and two electrodes of the flip chip are mounted on the first die attach electrode 43a and the second die attach electrode 43b by bonding or die attach adhesive fixing and then reflow soldering.
The light-emitting device is provided with a first support electrode 41a and a second support electrode 41b which are matched with the electrode spacing on the mounting substrate, and is provided with a first die bonding electrode 43a and a second die bonding electrode 43b which can be respectively and electrically fixed with the two electrodes of the chip, when the light-emitting device is used, the two electrodes 11a and 11b of the chip are respectively and electrically fixed with the first die bonding electrode 43a and the second die bonding electrode 43b, and then the first support electrode 41a and the second support electrode 41b of the chip support are electrically fixed with the electrodes on the mounting substrate, so that the electrical mounting of the chip on the mounting substrate can be realized. The light-emitting device can break through the limitation that the die bonding is difficult when the electrode pad spacing of the chip is less than 50um, effectively improves the precision of the semiconductor preparation process, and has low cost compared with the manufacturing mode that the chip is directly installed on the installation substrate by reducing the electrode spacing on the installation substrate. In addition, when the light-emitting device is adopted, the electrode welding of the chip and the chip support 40a can be carried out before the chip support 40a is installed on the installation substrate, the welding operation space is large, the welding is convenient, the welding precision between the chip and the chip support 40a can be effectively improved, the welding short circuit phenomenon caused by the direct welding of the chip and the installation substrate can be effectively reduced, and the abnormal proportion of die bonding is greatly reduced.
The insulating substrate 42 in the present invention may be made of an insulating substrate material commonly used in the existing semiconductor industry, in this embodiment, the insulating substrate 42 is a sapphire substrate, and the insulating substrate 42 is provided with a first connection hole 421a and a second connection hole 421b that are through; an upper end opening of the first connection hole 421a is disposed on the first surface 422a covered by the first die attach electrode 43a, and a lower end opening of the first connection hole 421a is disposed on the second surface 422b covered by the first support electrode 41 a; an upper end opening of the second connection hole 421b is disposed on the first surface 422a covered by the second die bond electrode 43b, and a lower end opening of the second connection hole 421b is disposed on the second surface 422b covered by the second support electrode 41 b; the first electrical connection structure 41-43a is disposed within the first connection aperture 421 a; the second electrical connection structures 41-43b are disposed within the second connection hole 421 b.
The first electrical structures 41-43a and the second electrical structures 41-43b in the present invention may be various structures that can achieve electrical connection between the die-bonding electrode and the stent electrode, and preferably, in this embodiment, the first electrical structures 41-43a and the second electrical structures 41-43b are metal die-bonding electrodes deposited in the first connection hole 421a and the second connection hole 421b, respectively.
In order to adapt to the electrode pitch of the conventional mounting substrate, the gap width D3 between the first frame electrode 41a and the second frame electrode 41b is preferably not less than 50 μm, for example, 50 to 150 μm, and in one embodiment, the gap width D3 is 50 to 80 μm.
Considering that the electrode pitch D1 of the conventional mini chip is not more than 50 μm, in order to match the electrode pitch of the mini chip, it is preferable that the gap width D2 between the first die bonding electrode 43a and the second die bonding electrode 43b is less than D3, and D2 is not more than 50 μm. In order to adapt to the micro chip electrode pitch, it is preferable that the gap width D2 between the first die bonding electrode 43a and the second die bonding electrode 43b is less than or equal to 30 μm.
For the convenience of integration on the mounting substrate, the maximum length dimension L2 of the chip holder 40a is preferably 1.1-1.5 times the chip length dimension L1.
The first die bonding electrode 43a and the second die bonding electrode 43b in the light emitting device of the present invention may have an electrode structure capable of achieving bonding or welding with a chip electrode, preferably, the first die bonding electrode 43a and the second die bonding electrode 43b in this embodiment are a metal adhesion layer 433, a eutectic layer 432 and a surface protection layer 431 in sequence from the first surface 422a side, and preferably, the metal adhesion layer in this embodiment is a Ti or Cr adhesion layer with a thickness of 1-10 nm; the eutectic layer is a Ni layer with the thickness of 100-2000nm and is used for Sn paste eutectic; the surface protective layer is an Au-plated protective layer with the thickness of 5-50 nm.
The first and second mount electrodes 41a and 41b in the light emitting device of the present invention may be conventional eutectic electrode structures, and the first and second mount electrodes 41a and 41b in this embodiment are Au or AuSn eutectic electrodes.
Example two
As shown in fig. 3, the present embodiment provides a light emitting device 10-40b, and the same parts as those in the first embodiment are not repeated, except that in the present embodiment, the chip 10 is a vertical chip, a chip insulating layer 50 is disposed around the vertical chip in a covering manner, an upper electrode 11a and a lower electrode 11b of the vertical chip are exposed outside the chip insulating layer 50, the lower electrode 11b is fixedly and electrically connected to the second die attach electrode 43b, and the upper electrode 11a is fixedly and electrically connected to the second die attach electrode 43a through a side lead electrical connection structure 44. The lower portion of the side lead electrical structure 44 is fixedly and electrically connected to the first die bonding electrode 43 a.
The side lead connection structure 44 of the present invention may be any structure capable of realizing rigid electrical connection and fixation between the vertical chip upper electrode and the first die attach electrode 43a, and preferably, the side lead connection structure 44 in this embodiment includes a first electrical connector 441, a second electrical connector 442, and a third electrical connector 443, where the first electrical connector 441 is fixed at the upper end of the second electrical connector 442 and protrudes to one side to be electrically connected to the vertical chip upper electrode 11 a; the third electric connector 443 is fixed to the lower end of the second electric connector 442 and is electrically and fixedly connected to the first die bond electrode 43 a. In order to increase the reliability, in this embodiment, an insulating layer 45 is preferably filled in the gap between the first die bonding electrode 43a and the second die bonding electrode 43 b. The maximum length dimension L1 of the chip support 40a is 1.1-1.5 times of the chip dimension L2. The light-emitting device can effectively reduce the installation difficulty of the vertical chip on the installation substrate and can effectively reduce the abnormal proportion of die bonding.
EXAMPLE III
The present embodiment provides a light emitting device module, which is an RGB module, and the light emitting device module includes a mounting substrate 30 and at least three light emitting devices mounted on the mounting substrate 30; as shown in fig. 4, the at least three light emitting devices in the RGB module of the present invention may be the light emitting devices 10 to 40a described in the first embodiment (i.e., the red light chip, the green light chip, and the blue light chip are all flip chips), and when the RGB module is mounted, the first support electrode 41a and the second support electrode 41b of each light emitting device 10 to 40a are fixed by the solder paste 20 and are soldered on the electrode 31 of the mounting substrate 30 by reflow soldering, and are electrically connected to the electrode 31 of the mounting substrate 30.
As shown in fig. 5 to 6, in the RGB module of this embodiment, the at least three light emitting devices include two light emitting devices 10 to 40a of the first embodiment and two light emitting devices 10 to 40b of the second embodiment, chips of the two light emitting devices 10 to 40a are blue flip chips and green flip chips, respectively, and chips of the light emitting devices 10 to 40b are red chips with a vertical structure, and the RGB module of this embodiment can implement a display technology with a pitch L3 smaller than 0.6 mm.
Example four
As shown in fig. 4, the present embodiment provides a light emitting device module, and the same parts of the light emitting device module as those of the third embodiment are not repeated, but the differences are that at least three light emitting devices in the present embodiment are the light emitting devices 10 to 40a in the first embodiment, and the chip of each light emitting device 10 to 40a is a blue chip.
EXAMPLE five
As shown in fig. 7 to 18, the present embodiment provides a method for manufacturing a light emitting device 10 to 40a in the first embodiment:
as shown in fig. 2, the light emitting device 10-40a includes a chip holder 40 and a chip 10 mounted on the chip holder, and the manufacturing method includes the following processes:
(1) chip support fabrication
1) Manufacturing an insulating substrate 42 shown in fig. 7;
2) as shown in fig. 8 to 9, at least one pair of connection holes 421 is etched on the first surface 422a of the insulating substrate 42 by using a yellow light etching process, where the pair of connection holes 421 includes a first connection hole 421a and a second connection hole 421 b:
the specific process is as follows: coating a first photoresist layer 43-1 on the first surface 422a of the insulating substrate except the reserved connecting hole, etching by adopting a yellow light process to form at least one pair of connecting holes 421, and removing the first photoresist layer 43-1;
3) as shown in fig. 10-12, a second photoresist layer 43-2 is coated on the non-predetermined electrode area of the first surface 422a of the insulating substrate 42, a metal conductive layer 43-3 is deposited on the first surface in and above each of the connecting holes, the second photoresist layer 43-2 and the excess metal conductive layer are removed, and at least one die-bonding electrode pair 43 is formed, wherein the die-bonding electrode pair 43 comprises a first die-bonding electrode 43a and a second die-bonding electrode 43b isolated from each other:
4) as shown in fig. 13, the back of the insulating substrate 42 is ground and thinned until a second surface 422b capable of exposing the connection hole is formed;
5) as shown in fig. 14 to 16, the insulating substrate 42 is turned over so that the second surface 422b faces upward, a third photoresist layer 41-1 is coated on the non-preset electrode region of the second surface 422b above the connection hole, and a metal conductive layer is deposited on the second surface 422b to form at least one support electrode pair 41, wherein the support electrode pair 41 comprises a first support electrode 41a and a second support electrode 41b insulated and isolated from each other.
(2) A first chip electrode 11a and a second chip electrode 11b are formed on a chip 10, and the first chip electrode 11a and the second chip electrode 11b are Sn electrodes formed by vapor deposition, chemical plating, or electroplating;
(3) as shown in fig. 17, the first chip electrode 11a and the second chip electrode 11b of the chip are respectively and correspondingly fixed and electrically connected to the first die attach electrode 43a and the first die attach electrode 43b by bonding or brushing a fluid die attach adhesive and then reflowing.
(4) As shown in fig. 18, the light emitting device 40-10a according to one embodiment is obtained by cutting along a cutting line AB.
In order to match the electrode pitch of the mini chip or micro chip, in the present embodiment, the gap width pitch between the first die bonding electrode 43a and the second die bonding electrode 43b is preferably not greater than 50 μm, and more preferably, should be less than 30 μm, and the gap width pitch between the first holder electrode 41a and the second holder electrode 41b is not less than 50 μm.
In order to meet the precision requirement of the mini chip or micro chip, in the present embodiment, the metal conductive layers deposited on the first surface 422a and the second surface 422b are preferably formed by evaporation or sputtering.
In summary, the light emitting device, the manufacturing method thereof and the light emitting device module comprising the light emitting device of the present invention can not only effectively solve the problem that the electrode pitch of the chip is small and is not matched with the electrode pitch of the mounting substrate, but also prevent the die bonding difficulty or short circuit risk caused by the small electrode pitch of the chip. The light-emitting device, the manufacturing method thereof and the light-emitting device module comprising the light-emitting device can break through the limitation that the die bonding is difficult when the electrode pad spacing of the chip is smaller than 50um, effectively improve the precision of the semiconductor preparation process, and have lower cost compared with the manufacturing mode that the chip is directly installed on the installation substrate by reducing the electrode spacing on the installation substrate. In addition, when the light-emitting device is adopted, the electrode welding of the chip and the chip support can be carried out before the chip support is arranged on the mounting substrate, the welding operation space is large, the welding is convenient, the welding precision between the chip and the chip support can be effectively improved, the welding short circuit phenomenon caused by the direct welding of the chip and the mounting substrate can be effectively reduced, and the proportion of abnormal die bonding is greatly reduced.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (23)
1. A light emitting device comprising a chip holder and a chip mounted on said chip holder, said chip holder comprising:
the device comprises an insulating substrate, a first electrode and a second electrode, wherein a first surface and a second surface which are opposite to each other are arranged on the insulating substrate;
a first support electrode and a second support electrode disposed on the second surface, a distance between the first support electrode and the second support electrode correspondingly matching an electrode distance of a mounting substrate;
the first die bonding electrode and the second die bonding electrode are arranged on the first surface, are insulated and spaced from each other and can be electrically connected and fixed with the two electrodes of the chip correspondingly;
a first electrical structure and a second electrical structure disposed within the insulating substrate; the first electrical connection structure electrically connects the first support electrode and the first die attach electrode; the second electrical connection structure electrically connects the second support electrode and the second die attach electrode;
the chip is fixedly arranged on the upper part of the chip support, and two electrodes of the chip are respectively and electrically connected with the first die bonding electrode and the second die bonding electrode.
2. The light-emitting device according to claim 1, wherein: a first connecting hole and a second connecting hole which are communicated are formed in the insulating substrate of the chip support; an upper end opening of the first connection hole is arranged on the first surface covered by the first die bond electrode, and a lower end opening of the first connection hole is arranged on the second surface covered by the first support electrode; an upper end opening of the second connecting hole is formed in the first surface covered by the second die bond electrode, and a lower end opening of the second connecting hole is formed in the second surface covered by the second support electrode; the first electrical connection structure is disposed within the first connection aperture; the second electrical connection structure is disposed within the second connection aperture.
3. The light-emitting device according to claim 2, wherein: the first and second electrical structures are metallic conductive layers deposited within the first and second connection holes, respectively.
4. The light-emitting device according to claim 1, wherein: the gap width D3 between the first stent electrode and the second stent electrode is not less than 50 μm.
5. The light-emitting device according to claim 1, wherein: the gap width D2 between the first die bonding electrode and the second die bonding electrode is not more than 50 μm.
6. The light-emitting device according to claim 4, wherein: the gap width D2 between the first die bond electrode and the second die bond electrode is less than or equal to 30 μm.
7. The light-emitting device according to claim 1, wherein: the maximum length dimension L2 of the chip support is 1.1-1.5 times of the length dimension L1 of the chip.
8. The light-emitting device according to claim 1, wherein the first die bond electrode and/or the second die bond electrode is a metal adhesion layer, a eutectic layer and a surface protection layer in this order from the first surface side upward.
9. The light-emitting device according to claim 1, wherein a gap between the first die attach electrode and the second die attach electrode is filled with an insulating layer.
10. The light-emitting device according to claim 1, wherein the chip is a flip chip, and two electrodes of the flip chip are mounted on the first die attach electrode and the second die attach electrode by bonding or die attach adhesive and reflow soldering.
11. The light-emitting device according to claim 1, wherein the chip is a vertical chip, a chip insulating layer is wrapped around the vertical chip, an upper electrode and a lower electrode of the vertical chip are exposed outside the chip insulating layer, the lower electrode is connected to the second die attach electrode, and the upper electrode is electrically connected to the second die attach electrode through a side-bonding connection structure.
12. The light emitting device according to claim 11, wherein the side lead connection structure includes a first electrical contact, a second electrical contact, and a third electrical contact, the first electrical contact being fixed to an upper end of the second electrical contact and protruding to one side to be connected to the upper electrode; the third electric connector is formed at the lower end of the second electric connector and connected with the first die bonding electrode.
13. A method for manufacturing a light emitting device is characterized by comprising the following steps:
providing a chip support, the chip support comprising:
the device comprises an insulating substrate, a first electrode and a second electrode, wherein a first surface and a second surface which are opposite to each other are arranged on the insulating substrate;
a first support electrode and a second support electrode disposed on the second surface, a distance between the first support electrode and the second support electrode correspondingly matching an electrode distance of a mounting substrate;
the first die bonding electrode and the second die bonding electrode are arranged on the first surface, are insulated and spaced from each other and can be electrically connected and fixed with the two electrodes of the chip correspondingly;
a first electrical structure and a second electrical structure disposed within the insulating substrate; the first electrical connection structure electrically connects the first support electrode and the first die attach electrode; the second electrical connection structure electrically connects the second support electrode and the second die attach electrode;
and providing an LED chip, wherein the chip is provided with a first electrode and a second electrode, and the LED chip is arranged on the bracket, wherein the first electrode of the LED chip is connected with the first die bonding electrode, and the second electrode is connected with the second die bonding electrode.
14. The method of manufacturing according to claim 13, wherein: the chip support is manufactured by the following method:
providing an insulating substrate;
etching at least one pair of connecting holes on the first surface of the insulating substrate;
depositing a metal conductive layer on the first surface in and above each connecting hole to form at least one die bonding electrode pair, wherein the die bonding electrode pair comprises a first die bonding electrode and a second die bonding electrode which are insulated and isolated from each other;
grinding and thinning the back of the insulating substrate until a second surface capable of exposing the connecting hole is formed;
and turning over the insulating substrate to enable the second surface to face upwards, and depositing a metal conducting layer on the second surface above the connecting hole to form at least one support electrode pair, wherein the support electrode pair comprises a first support electrode and a second support electrode which are insulated and isolated from each other.
15. The method of claim 13, wherein the electrodes on the chip are Sn electrodes formed by vapor deposition, chemical plating, or electroplating.
16. The method according to claim 14, wherein the two Sn electrodes of the chip are electrically connected to the die attach electrode pair by bonding or brushing a fluid die attach adhesive and reflowing.
17. The manufacturing method according to claim 13, wherein a gap width D2 between the first die bond electrode and the second die bond electrode is not more than 50 μm, a gap width D3 between the first stent electrode and the second stent electrode is not less than 50 μm, and D2< D3.
18. The method of claim 16, wherein a gap width D2 between the first die attach electrode and the second die attach electrode is less than or equal to 30 μm.
19. The manufacturing method according to claim 13, wherein the metal conductive layer deposited on the first surface and/or the second surface is made by evaporation or sputtering.
20. A light emitting device module comprising a mounting substrate and at least three light emitting devices mounted on the mounting substrate, wherein the light emitting devices are the light emitting devices of any one of claims 1 to 12, and the first support electrode and the second support electrode of each light emitting device are respectively fixed on the mounting substrate and electrically connected to the electrodes of the mounting substrate.
21. The light emitting device module of claim 19, wherein the chips of the at least three light emitting devices comprise at least a red chip, a green chip, and a blue chip.
22. The light emitting device module of claim 20, wherein the blue chip and the green chip are flip chips and the red chip is a vertical chip.
23. The light emitting device module of claim 19, wherein the first frame electrode and the second frame electrode are mounted on the mounting substrate by die attach adhesive and reflow soldering.
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| CN201910830127.9A CN110707203A (en) | 2019-09-04 | 2019-09-04 | Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device |
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| CN201910830127.9A CN110707203A (en) | 2019-09-04 | 2019-09-04 | Light emitting device, manufacturing method thereof and light emitting device module comprising light emitting device |
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