CN203055978U - Inverted base plate and LED packaging structure base on inverted base plate - Google Patents
Inverted base plate and LED packaging structure base on inverted base plate Download PDFInfo
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- CN203055978U CN203055978U CN 201220651276 CN201220651276U CN203055978U CN 203055978 U CN203055978 U CN 203055978U CN 201220651276 CN201220651276 CN 201220651276 CN 201220651276 U CN201220651276 U CN 201220651276U CN 203055978 U CN203055978 U CN 203055978U
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Abstract
The utility model provides an inverted base plate. The inverted base plate comprises a copper heat sink plate, wherein the copper heat sink plate is embedded with an insulation belt, the copper heat sink plate is divided into two electrodes by the insulation belt, tungsten copper alloy bosses fixing LED chips are respectively welded on the two electrodes, and surfaces of the tungsten copper alloy bosses are respectively provided with a galvanized coating layer. The inverted base plate has a simple structure, simplifies a manufacturing process flow of a base plate and greatly reduces production cost; mounting height of the LED chips is increased in a lamp by utilizing the tungsten copper alloy bosses, so more light emitted by the LED chips can directly irradiate on a work face of a packaging lens, and thereby a problem of influence on a light emitting rate caused by lens bonding in a traditional ceramic base plate is solved, moreover, positive and negative electrodes of the LED chips are directly in conductive connection with the tungsten copper alloy bosses, so gold wire bonding technology in a traditional technology is not required, and a packaging process flow of the LED chips is further simplified.
Description
Technical field
The utility model relates to LED encapsulation technology field, and a kind of flip-chip substrate reaches the LED encapsulating structure based on this flip-chip substrate specifically.
Background technology
LED (Light Emitting Diode) is a kind of solid-state semiconductor device, can convert electrical energy into luminous energy.Have that power consumption is little, spotlight effect good, reaction speed is fast, controllability is strong, can bear advantages such as high impact forces, long service life, environmental protection, LED just progressively substitutes conventional light source, become the 4th generation light source.
Though LED is energy-conservation, but it is the same with general incandescent lamp decoration, part energy is converted in the process of light, part energy changes into heat in addition, especially LED is the point-like illuminating source, its heat that produces also concentrates on minimum zone, if the heat that produces can't in time distribute, the junction temperature of PN junction will raise, speed-up chip and encapsulating material aging, also may cause solder joint to melt, cause chip failure, and then directly influence useful life and luminescent properties, the especially great power LED of LED, its caloric value is bigger, requires higher to heat dissipation technology.
Ceramic substrate has advantages such as high heat radiation, low thermal resistance, long-life, serviceability temperature are wide, proof voltage, but the preparation ceramic heat-dissipating substrate need have higher equipment and technology, manufacturing process is quite complicated, need use as technology such as exposure, vacuum moulding machine, development, evaporation, sputter plating and electroless platings, make ceramic substrate involve great expense.In addition, in traditional ceramic substrate, the adhesive glue of package lens and copper metal composite layer can have certain influence to the bright dipping of led chip, and this part glue has stopped a part of light that send the led chip side, makes the utilance of LED lateral light descend.For this problem, those skilled in the art have also proposed improvement, it is 201220168404.8 Chinese patent as the patent No., a kind of led chip package substrate construction is disclosed, though this scheme has solved the problem of using the traditional ceramics substrate to cause led chip side direction light emission rate to reduce, but the design of circuit layer and micron order ultra-thin ceramic insulating barrier, increased the complexity of technology more, used the tungsten-copper alloy panel that has boss in addition in the patent, increased material cost, made that the problem of this base plate for packaging cost costliness is not still solved.
The utility model content
A wherein purpose of the present utility model is to provide a kind of flip-chip substrate.
Another purpose of the present utility model is to provide a kind of LED encapsulating structure based on above-mentioned flip-chip substrate.
In order to achieve the above object, the utility model has adopted following technical scheme:
A kind of flip-chip substrate comprises: copper heat sink plate, be embedded with a bar insulation band on this copper heat sink plate, and this insulating tape should copper heat sink plate be divided into two electrodes; The tungsten-copper alloy boss of fixed L ED chip is welded on respectively on two electrodes, is provided with electrodeposited coating on the surface of this tungsten-copper alloy boss.
As optimal technical scheme of the present utility model: the thickness of described tungsten-copper alloy boss is 0.2-0.3mm.
As optimal technical scheme of the present utility model: described tungsten-copper alloy boss welds by silver-copper brazing alloy layer and electrode.
As optimal technical scheme of the present utility model: described electrodeposited coating is provided with the nickel electrodeposited coating from the inside to the outside and golden electrodeposited coating is two-layer.
LED encapsulating structure based on above-mentioned flip-chip substrate comprises led chip, package lens, and copper heat sink plate is embedded with a bar insulation band on this copper heat sink plate, and this insulating tape should copper heat sink plate be divided into two electrodes; The tungsten-copper alloy boss of fixed L ED chip is welded on respectively on two electrodes, is provided with electrodeposited coating on the surface of this tungsten-copper alloy boss; Described led chip is welded on the electrodeposited coating of tungsten-copper alloy boss surface, and its positive and negative electrode is connected with this tungsten-copper alloy boss conduction respectively.
As optimal technical scheme of the present utility model: described tungsten-copper alloy boss welds by silver-copper brazing alloy layer and electrode.
As optimal technical scheme of the present utility model: described electrodeposited coating is provided with the nickel electrodeposited coating from the inside to the outside and golden electrodeposited coating is two-layer.
As optimal technical scheme of the present utility model: described led chip is welded on the electrodeposited coating of tungsten-copper alloy boss surface by the golden soldering bed of material.
Compared with prior art, the disclosed flip-chip substrate of the utility model is simple in structure, simplified the manufacturing process flow of substrate, greatly reduce the production cost of LED base plate for packaging, the tungsten-copper alloy boss makes led chip increase in the interior setting height(from bottom) of light fixture, thereby the led chip more direct projection of luminous energy of launching is to the working face (curved surface of package lens) of package lens, solved that the lens adhesive glue has increased the light emission rate of LED lamp pearl to the problem of light emission rate influence in the traditional ceramics substrate; And the positive and negative electrode of led chip directly conducts electricity with the tungsten-copper alloy boss and is connected, and does not need to carry out to beat gold thread technology in the traditional handicraft, and the packaging technology flow process of led chip is able to further simplification.Simultaneously, the tungsten-copper alloy boss combines the advantage of copper and tungsten, has both had the low expansion character of tungsten, has the high thermal conduction characteristic of copper again, more be applicable to the heat sink material of doing high power device.
Description of drawings
Fig. 1 is the structural representation of the flip-chip substrate in the utility model.
Fig. 2 is the schematic diagram of the manufacture method of the flip-chip substrate in the utility model.
Fig. 3 is the schematic diagram based on the LED encapsulating structure of this flip-chip substrate in the utility model.
Embodiment
See also Fig. 1, the flip-chip substrate shown in the figure comprises: copper heat sink plate 101, be embedded with a bar insulation band 104 on this copper heat sink plate 101, and this insulating tape 104 should copper heat sink plate 101 be divided into two electrodes 102; The tungsten-copper alloy boss 105 of fixed L ED chip is welded on respectively on two electrodes 102 by silver-copper brazing alloy layer (seeing also Fig. 3), is provided with electrodeposited coating 106 on the surface of this tungsten-copper alloy boss 105.More excellent, this electrodeposited coating 106 is provided with nickel electrodeposited coating (not shown) from the inside to the outside and golden electrodeposited coating (not shown) is two-layer, and golden electrodeposited coating covers on the nickel electrodeposited coating.More excellent, the thickness of described tungsten-copper alloy boss 105 is 0.2-0.3mm.
See also Fig. 2, make above-mentioned flip-chip substrate and may further comprise the steps:
A, provide a copper heat sink plate 101, offer a groove 108 by punching press or etch process in copper heat sink plate 101, this groove 108 should copper heat sink plate 101 be divided into two electrodes 102.
B, use silver-copper brazing alloy are welded on the tungsten-copper alloy boss 105 of fixed L ED chip respectively on two electrodes 102, and welding temperature is 700-800 ℃.More excellent, the thickness of this tungsten-copper alloy boss 105 is 0.2-0.3mm.
C, in the groove 108 of copper heat sink plate 101, insert insulating material and carry out sintering, form a bar insulation band 104 in this copper heat sink plate 101.More excellent, the insulating material of filling is the mixture of aluminium oxide and glass, sintering temperature is 400-600 ℃.The good insulation performance performance is not only arranged behind the mixture sintering of aluminium oxide and glass, and its intensity is higher, can improves the bond strength of 102 at two electrodes.
D, the surface of tungsten-copper alloy boss 105 is electroplated, form electrodeposited coating 106 on its surface: electroplate a gold medal electrodeposited coating at first at the electroplating surface one nickel electrodeposited coating of tungsten-copper alloy boss 105, and then at the nickel electrodeposited coating, golden electrodeposited coating covers on the nickel electrodeposited coating.
E, remove the zone that the two ends of two electrodes 102 are connected, form the structure of 102 insulation of two electrodes.
See also Fig. 3, be the LED encapsulating structure based on above-mentioned flip-chip substrate, comprise led chip 201, package lens 203, copper heat sink plate 101 shown in the figure.Be embedded with a bar insulation band 104 on this copper heat sink plate 101, this insulating tape 104 should copper heat sink plate 101 be divided into two electrodes 102.
The tungsten-copper alloy boss 105 of fixed L ED chip 201 is welded on respectively on two electrodes 102 by silver-copper brazing alloy layer 109, is provided with electrodeposited coating 106 on the surface of this tungsten-copper alloy boss 105.More excellent, this electrodeposited coating 106 is provided with nickel electrodeposited coating (not shown) from the inside to the outside and golden electrodeposited coating (not shown) is two-layer, and golden electrodeposited coating covers on the nickel electrodeposited coating.More excellent, the thickness of described tungsten-copper alloy boss 105 is 0.2-0.3mm.
Described led chip 201 is welded on respectively on the electrodeposited coating 106 on two tungsten-copper alloy boss 105 surfaces on the electrode 102 by the golden soldering bed of material 107.The positive and negative electrode of led chip 201 is connected with tungsten-copper alloy boss 105 conductions respectively.Led chip 201 is arranged on the tungsten-copper alloy boss 105, make led chip 201 increase in the interior setting height(from bottom) of light fixture, thereby therefore the led chip 201 more direct projection of luminous energy of launching has increased the light emission rate of LED lamp pearl to the working face (curved surface of package lens) of package lens 203.And the positive and negative electrode of led chip directly conducts electricity with tungsten-copper alloy boss 105 and is connected, and does not need to carry out to beat gold thread technology in the traditional handicraft, and the packaging technology flow process of led chip is able to further simplification.Simultaneously, tungsten-copper alloy boss 105 combines the advantage of copper and tungsten, has both had the low expansion character of tungsten, has the high thermal conduction characteristic of copper again, more be applicable to the heat sink material of doing high power device.
The above is preferred embodiment of the present utility model only, is not to limit practical range of the present utility model; Every equivalence of doing according to the utility model changes and revises, and is all covered by the scope of the utility model claims.
Claims (8)
1. a flip-chip substrate is characterized in that, comprising: copper heat sink plate, be embedded with a bar insulation band on this copper heat sink plate, and this insulating tape should copper heat sink plate be divided into two electrodes; The tungsten-copper alloy boss of fixed L ED chip is welded on respectively on two electrodes, is provided with electrodeposited coating on the surface of this tungsten-copper alloy boss.
2. flip-chip substrate according to claim 1, it is characterized in that: the thickness of described tungsten-copper alloy boss is 0.2-0.3mm.
3. flip-chip substrate according to claim 1 and 2 is characterized in that: described tungsten-copper alloy boss welds by silver-copper brazing alloy layer and electrode.
4. flip-chip substrate according to claim 1, it is characterized in that: described electrodeposited coating is provided with the nickel electrodeposited coating from the inside to the outside and golden electrodeposited coating is two-layer.
5. LED encapsulating structure based on flip-chip substrate as claimed in claim 1, comprise led chip, package lens, it is characterized in that: copper heat sink plate, be embedded with a bar insulation band on this copper heat sink plate, this insulating tape should copper heat sink plate be divided into two electrodes; The tungsten-copper alloy boss of fixed L ED chip is welded on respectively on two electrodes, is provided with electrodeposited coating on the surface of this tungsten-copper alloy boss; Described led chip is welded on the electrodeposited coating of tungsten-copper alloy boss surface, and its positive and negative electrode is connected with this tungsten-copper alloy boss conduction respectively.
6. the LED encapsulating structure based on flip-chip substrate according to claim 5 is characterized in that: described tungsten-copper alloy boss welds by silver-copper brazing alloy layer and electrode.
7. the LED encapsulating structure based on flip-chip substrate according to claim 5, it is characterized in that: described electrodeposited coating is provided with the nickel electrodeposited coating from the inside to the outside and golden electrodeposited coating is two-layer.
8. the LED encapsulating structure based on flip-chip substrate according to claim 5, it is characterized in that: described led chip is welded on the electrodeposited coating of tungsten-copper alloy boss surface by the golden soldering bed of material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220651276 CN203055978U (en) | 2012-11-29 | 2012-11-29 | Inverted base plate and LED packaging structure base on inverted base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220651276 CN203055978U (en) | 2012-11-29 | 2012-11-29 | Inverted base plate and LED packaging structure base on inverted base plate |
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| CN203055978U true CN203055978U (en) | 2013-07-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220651276 Expired - Fee Related CN203055978U (en) | 2012-11-29 | 2012-11-29 | Inverted base plate and LED packaging structure base on inverted base plate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022332A (en) * | 2012-11-29 | 2013-04-03 | 芜湖德豪润达光电科技有限公司 | Flip-chip substrate and manufacturing method thereof as well as flip-chip-substrate-based LED (Light Emitting Diode) packaging structure |
| CN103855293A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Led |
| CN104078457A (en) * | 2014-06-26 | 2014-10-01 | 复旦大学 | High-power integrated encapsulation structure of LED flip chips |
| US9859483B2 (en) * | 2015-02-17 | 2018-01-02 | Hsiu Chang HUANG | Flip-chip light emitting diode and method for manufacturing the same |
| CN113644186A (en) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | Packaging structure of flip LED chip |
-
2012
- 2012-11-29 CN CN 201220651276 patent/CN203055978U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022332A (en) * | 2012-11-29 | 2013-04-03 | 芜湖德豪润达光电科技有限公司 | Flip-chip substrate and manufacturing method thereof as well as flip-chip-substrate-based LED (Light Emitting Diode) packaging structure |
| CN103022332B (en) * | 2012-11-29 | 2015-10-21 | 芜湖德豪润达光电科技有限公司 | Flip-chip substrate and manufacture method thereof and the LED encapsulation structure based on this flip-chip substrate |
| CN103855293A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | Led |
| CN103855293B (en) * | 2014-01-26 | 2016-08-17 | 上海瑞丰光电子有限公司 | Led |
| CN104078457A (en) * | 2014-06-26 | 2014-10-01 | 复旦大学 | High-power integrated encapsulation structure of LED flip chips |
| US9859483B2 (en) * | 2015-02-17 | 2018-01-02 | Hsiu Chang HUANG | Flip-chip light emitting diode and method for manufacturing the same |
| CN113644186A (en) * | 2021-07-14 | 2021-11-12 | 深圳市定千亿电子有限公司 | Packaging structure of flip LED chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130710 Termination date: 20181129 |
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| CF01 | Termination of patent right due to non-payment of annual fee |