CN109560456A - A kind of capsulation structure for semiconductor laser and preparation method thereof - Google Patents
A kind of capsulation structure for semiconductor laser and preparation method thereof Download PDFInfo
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- CN109560456A CN109560456A CN201810833016.9A CN201810833016A CN109560456A CN 109560456 A CN109560456 A CN 109560456A CN 201810833016 A CN201810833016 A CN 201810833016A CN 109560456 A CN109560456 A CN 109560456A
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- heat sink
- semiconductor laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000010439 graphite Substances 0.000 claims abstract description 64
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 64
- 230000007704 transition Effects 0.000 claims abstract description 49
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910000679 solder Inorganic materials 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000006263 metalation reaction Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 230000010512 thermal transition Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 18
- 230000017525 heat dissipation Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 229910017083 AlN Inorganic materials 0.000 abstract description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 4
- 229910003460 diamond Inorganic materials 0.000 abstract description 3
- 239000010432 diamond Substances 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 238000011982 device technology Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008236 heating water Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application belongs to field of laser device technology, more particularly to a kind of capsulation structure for semiconductor laser and preparation method thereof.Since copper tungsten material has high heat conductance, low thermal coefficient of expansion, excellent conductivity is a time heat sink material well, as the increase of copper tungsten size can achieve better heat dissipation effect.But since copper tungsten is expensive, cause the packaging cost of semiconductor laser higher and higher.The application provides a kind of capsulation structure for semiconductor laser and preparation method thereof, it is heat sink including basis, it is heat sink that auxiliary is provided on the basis is heat sink, it is described auxiliary it is heat sink include that the first graphite is heat sink and the second graphite is heat sink, first graphite is heat sink with second graphite it is heat sink between be provided with transition heat sink.So that still being able to reach better heat dissipation effect while reducing transition heat sink size, it is no longer limited to increase the encapsulating material size (such as aluminium nitride, copper tungsten, diamond etc.) of higher cost in encapsulating material selection.
Description
Technical field
The application belongs to field of laser device technology, more particularly to a kind of capsulation structure for semiconductor laser and its preparation side
Method.
Background technique
Semiconductor laser is also known as laser diode, is to use semiconductor material as the laser of operation material.Due to object
Difference in matter structure, the detailed process that variety classes generate laser are more special.Common operation material have GaAs (GaAs),
Cadmium sulfide (CdS), indium phosphide (InP), zinc sulphide (ZnS) etc..Energisation mode has electrical pumping, electron beam excitation and three kinds of optical pumping
Form.It is several can be divided into homojunction, single heterojunction, double heterojunction etc. for semiconductor laser device.Homojunction laser and Dan Yizhi
PN junction laser PN mostly pulse device in room temperature, and continuous work can be realized when double heterojunection laser room temperature.
Since semiconductor laser has many advantages, such as that photoelectric conversion efficiency is high, light-weight, small in size.In military affairs, medical treatment etc.
Industry has to be widely applied very much.With the development of semiconductor laser technology, requirement of the people to its output power is gradually increased,
Semiconductor laser chip junction temperature is caused to increase.As the raising of junction temperature makes the red shift of wavelength of semiconductor laser, threshold current
Increase, photoelectric conversion efficiency decline, service life reduction, reliability decrease.Therefore semiconductor laser encapsulation technology becomes very heavy
It wants.
With the development of semiconductor laser encapsulation technology, people are to high heat conductance, the ruler that low thermal coefficient of expansion time is heat sink
It is very little require it is higher and higher.Since copper tungsten material has high heat conductance, low thermal coefficient of expansion, excellent conductivity is one fine
Secondary heat sink material, as the increase of copper tungsten size can achieve better heat dissipation effect.But since copper tungsten is expensive,
Cause the packaging cost of semiconductor laser higher and higher.
Summary of the invention
1. technical problems to be solved
Based on the development with semiconductor laser encapsulation technology, for people to high heat conductance, low thermal coefficient of expansion time is heat sink
Size require it is higher and higher.Since copper tungsten material has high heat conductance, low thermal coefficient of expansion, excellent conductivity is one
Time heat sink material well, as the increase of copper tungsten size can achieve better heat dissipation effect.But due to copper tungsten price
Valuableness, the problem for causing the packaging cost of semiconductor laser higher and higher, this application provides a kind of new semiconductor lasers
Encapsulating structure and preparation method thereof.
2. technical solution
To achieve the above object, this application provides a kind of capsulation structure for semiconductor laser and preparation method thereof,
Heat sink including basis, it is heat sink to be provided with auxiliary on the basis is heat sink, described to assist heat sink including that the first graphite is heat sink and second
Graphite is heat sink, first graphite is heat sink with second graphite it is heat sink between be provided with transition heat sink.
Optionally, the basis it is heat sink on be provided with that auxiliary is heat sink, and the auxiliary is heat sink and the basic heat sink welding, institute
State auxiliary it is heat sink include that the first graphite is heat sink and the second graphite is heat sink, first graphite is heat sink and second graphite it is heat sink it
Between be provided with transition heat sink, first graphite is heat sink to be welded with the transition heat sink, the transition heat sink and second stone
Black heat sink welding.
Optionally, semiconductor laser, the semiconductor laser and transition heat are provided in the transition heat sink
Heavy welding.
Optionally, the semiconductor laser is connected by spun gold component with electrode.
Optionally, the basis is heat sink heat sink for copper, and the transition heat sink is that copper tungsten is heat sink, the semiconductor laser
For edge emitting formula single-tube semiconductor laser, the edge emitting formula single-tube semiconductor laser uses c-mount encapsulating structure.
The application also provides a kind of preparation method of capsulation structure for semiconductor laser, and described method includes following steps:
1) to basis it is heat sink clean after keep drying；
2) to the heat sink progress surface metalation processing of auxiliary；
3) by the auxiliary handled well is heat sink and transition heat sink is welded；
4) mutual welding transition is heat sink and auxiliary is heat sink is placed in first in basic the first solder layer of heat sink upper is formationed
It is welded on solder layer.
Optionally, the method also includes:
The second solder layer is formed in transition heat sink, it is enterprising that fixed semiconductor laser is placed in second solder layer
Row welding；
It, will be on semiconductor laser using gold wire bonding machine after the semiconductor laser temperature being welded is reduced to room temperature
Surface is connected with electrode top using spun gold component.
Optionally, the auxiliary is heat sink is closely connect with the transition heat sink by golden tin solder.
Optionally, second solder layer is prepared by thermal evaporation or electron beam evaporation process.
3. beneficial effect
Compared with prior art, a kind of capsulation structure for semiconductor laser provided by the present application and preparation method thereof is beneficial
Effect is:
A kind of capsulation structure for semiconductor laser provided by the present application, by heat sink heat sink with the second graphite in the first graphite
Between transition heat sink is set so that still being able to reach better heat dissipation effect, sealing while reducing transition heat sink size
It is no longer limited to increase the encapsulating material size (such as aluminium nitride, copper tungsten, diamond etc.) of higher cost in package material selection.Together
When, make semiconductor laser output power is bigger generate more waste heat in the case where that its can still be maintained is higher reliable
Property, higher incident photon-to-electron conversion efficiency and higher service life.
Detailed description of the invention
Fig. 1 is a kind of capsulation structure for semiconductor laser structural schematic diagram of the application；
Fig. 2 is a kind of capsulation structure for semiconductor laser partial enlarged view of the application；
In figure: the basis 1- is heat sink, the first graphite of 2- is heat sink, the second graphite of 3- is heat sink, 4- transition heat sink, 5- semiconductor laser
Device, 6- spun gold component, 7- electrode.
Specific embodiment
Hereinafter, specific embodiment of the reference attached drawing to the application is described in detail, it is detailed according to these
Description, one of ordinary skill in the art can implement the application it can be clearly understood that the application.Without prejudice to the application principle
In the case where, the feature in each different embodiment can be combined to obtain new embodiment, or be substituted certain
Certain features in embodiment, obtain other preferred embodiments.
Graphite is a kind of anisotropic thermal conductivity low thermal resistance material.In graphite crystal, each carbon atom is with SP2It is miscellaneous
Change track and three adjacent carbon atoms form covalent single bond, constitutes the reticular structure of hexaplanar, these reticular structures are again
It is linked to be lamellar structure.In solid material, heat exchange pattern is broadly divided into two kinds.One is due to free electron vibration realizing,
Such as metal material.Another kind is is realized by the vibration wave of lattice atoms, that is, phonon vibration, such as graphite.In the reticular structure of graphite
In, the hot amplitude of phonon vibration is very big, and graphite is caused to have high crystal face thermal coefficient.But for the side of vertical reticular structure
To, it is lower in the thermal conductivity of the direction due to the hot amplitude very little of phonon vibration, it is a kind of each to the thermally conductive opposite sex of high heat conductance
Material.Since the lateral heat dissipation of graphite belongs to the heat transfer of the phonon vibration in reticular structure, cause graphite flake that there is high cross
To thermal conductivity.Compared to other heat sink materials, graphite thermal conductivity is higher, and cost is relatively low.
Junction temperature (junction temperature) is in practical semiconductor chip (wafer, bare die) in electronic equipment
The operating temperature of middle PN junction.It is usually above skin temperature and device surface temperature.
Red shift in physics and astronomy field, refer to the electromagnetic radiation of object for some reason wavelength increase the phenomenon that,
In visible light wave range, the spectral line of spectrum is shown as towards red end and moves a distance, i.e., wavelength is elongated, frequency reduces.
Referring to Fig. 1~2, the application provides a kind of capsulation structure for semiconductor laser, including basis heat sink 1, the basis
It is heat sink that auxiliary is provided on heat sink 1, it includes the first graphite heat sink 2 and the second graphite heat sink 3, first stone that the auxiliary is heat sink
Transition heat sink 4 is provided between ink heat sink 2 and second graphite heat sink 3.It is heat sink that the first graphite is set in 4 two sides of transition heat sink
2 and second graphite heat sink 3 come reach increase encapsulating structure heat dissipation performance.
Optionally, it is heat sink that auxiliary is provided on the basis heat sink 1, the auxiliary is heat sink and heat sink 1 welding in the basis,
It includes the first graphite heat sink 2 and the second graphite heat sink 3 that the auxiliary is heat sink, first graphite heat sink 2 and second graphite
Be provided with transition heat sink 4 between heat sink 3, first graphite heat sink 2 is welded with the transition heat sink 4, the transition heat sink 4 with
Heat sink 3 welding of second graphite.
Optionally, semiconductor laser 5, the semiconductor laser 5 and the transition are provided in the transition heat sink 4
Heat sink 4 welding.
Optionally, the semiconductor laser 5 is connected by spun gold component 6 with electrode 7.
Optionally, the basis heat sink 1 is that copper is heat sink, and the transition heat sink 4 is that copper tungsten is heat sink, the semiconductor laser
Device 5 is edge emitting formula single-tube semiconductor laser, and the edge emitting formula single-tube semiconductor laser is using c-mount encapsulation knot
Structure.
The application also provides a kind of preparation method of capsulation structure for semiconductor laser, and described method includes following steps:
1) drying is kept after cleaning to basis heat sink 1；
2) to the heat sink progress surface metalation processing of auxiliary；
3) by the auxiliary handled well is heat sink and transition heat sink 4 is welded；
4) the first solder layer is formed on basis heat sink 1, by mutual welding transition heat sink 4 and assists heat sink being placed in the
It is welded on one solder layer.Assist heat sink and transition heat sink 4 will using fixture in the welding process of heat sink 1 upper surface in basis
It links together.Transition heat sink 4 and the heat sink front end face of auxiliary are aligned with heat sink 1 front end face in basis, transition heat sink 4 and auxiliary
Heat sink rear end face is helped to be aligned with heat sink 1 rear end face in basis.
Optionally, the method also includes:
The second solder layer is formed in transition heat sink 4, and fixed semiconductor laser 5 is placed on second solder layer
It is welded；5 front end face of semiconductor laser is aligned with 4 front end face of transition heat sink.4 width dimensions of transition heat sink are being greater than half
On the basis of 5 width of conductor laser, with the reduction of size, heat dissipation performance increases therewith.Assist heat sink width dimensions with
The increase of the width of transition heat sink 4 and reduce, the sum of width dimensions of the two be less than basis heat sink 1 width.
After 5 temperature of semiconductor laser being welded is reduced to room temperature, using gold wire bonding machine, by semiconductor laser 5
Upper surface and 7 upper surface of electrode are connected using spun gold component 6.
Optionally, the auxiliary is heat sink is closely connect with the transition heat sink 4 by golden tin solder.
Optionally, second solder layer is prepared by thermal evaporation or electron beam evaporation process.
The chip of laser is having a size of 1.5mmx0.5mmx0.15mm.The size of transition heat sink 4 is small as far as possible, package system
Heat dissipation performance it is more preferable.
The capsulation structure for semiconductor laser is completed by following steps:
(1) heat sink to basis 1 cleaning treatment is carried out.It is embodied as, is impregnated 5 minutes with dilute hydrochloric acid solution carry out table first
The cleaning of surface oxidation film and greasy dirt；Taking-up is rinsed with clear water；Then its surface is rubbed with acetone；Then anaerobic copper pedestal is put into
Heating water bath cleaning is carried out in the container being filled with water, for temperature between 40 DEG C~60 DEG C, the time is 30 minutes；After heating water bath cleaning
It is rinsed with plasma water；Finally with being dried with nitrogen.
It (2) will auxiliary heat sink surface metallization.It is embodied as, using electroless copper or the method for electro-coppering to first
Graphite is heat sink 2 and second heat sink 3 surface of graphite metallize, work convenient for following auxiliary heat sink welding.
(3) the first graphite heat sink 2 and the second graphite heat sink 3 and transition heat sink 4 are welded to table on basis heat sink 1 jointly
Face.It is embodied as, the first graphite heat sink 2 and the second graphite heat sink 3 and 4 two sides of transition heat sink is used into golden tin solder respectively first
Weld together, then in the heat sink lower surface of heat sink 2, second graphite heat sink 3 of the first graphite and copper tungsten and basis heat sink 1
It is welded by indium solder upper surface.At 156 DEG C of solder melt point or more, by the first graphite heat sink 2 and the second graphite heat sink 3 and copper
Change tungsten is heat sink to be welded on jointly on basis heat sink 1.Keep the first graphite heat sink 2 and the second graphite heat sink 3 and copper tungsten heat sink simultaneously
Front end face and basis heat sink 1 front end face be flush, the first graphite is heat sink 2 and second graphite heat sink 3 and copper tungsten it is heat sink
Rear end face and the front end face on basis heat sink 1 are flush.Cooling solder, complete the first graphite heat sink 2 and the second graphite heat sink 3 with
The fixation of the upper surface of lower surface and basis heat sink 1 that copper tungsten is heat sink.
(4) semiconductor laser 5 is welded to the heat sink upper surface of copper tungsten.It is embodied as, semiconductor laser 5 is put in work
Make on platform, semiconductor laser 5 is sucked using chip mounter, P is face-down.By semiconductor laser 5 and copper tungsten it is heat sink before
End face is completely coincident, and suction nozzle declines automatically after determining position, and semiconductor laser 5 is depressed on aluminium nitride, manually opened heating
Device waits completion to be welded.
(5) gold wire bonding.It is embodied as, after 5 temperature of semiconductor laser being welded is reduced to room temperature, uses spun gold
5 upper surface of semiconductor laser and 7 upper surface of electrode are used diameter to connect for 25 μm of spun gold component 6 by bonder.
A kind of capsulation structure for semiconductor laser provided by the present application, by heat sink heat sink with the second graphite in the first graphite
Between transition heat sink is set so that still being able to reach better heat dissipation effect, sealing while reducing transition heat sink size
It is no longer limited to increase the encapsulating material size (such as aluminium nitride, copper tungsten, diamond etc.) of higher cost in package material selection.Together
When, make semiconductor laser output power is bigger generate more waste heat in the case where that its can still be maintained is higher reliable
Property, higher incident photon-to-electron conversion efficiency and higher service life.
Although the application is described above by referring to specific embodiment, one of ordinary skill in the art are answered
Work as understanding, in principle disclosed in the present application and range, many modifications can be made for configuration disclosed in the present application and details.
The protection scope of the application is determined by the attached claims, and claim is intended to technical characteristic in claim
Equivalent literal meaning or range whole modifications for being included.
Claims (9)
1. a kind of capsulation structure for semiconductor laser, it is characterised in that: including basic heat sink (1), set on the basis heat sink (1)
It is heat sink to be equipped with auxiliary, it includes that the first graphite heat sink (2) and the second graphite are heat sink (3) that the auxiliary is heat sink, first graphite thermal
Transition heat sink (4) are provided between heavy (2) and second graphite heat sink (3).
2. capsulation structure for semiconductor laser as described in claim 1, it is characterised in that: be arranged on the basis heat sink (1)
There is auxiliary heat sink, the auxiliary is heat sink to weld with the basis heat sink (1), and it includes that the first graphite is heat sink (2) that the auxiliary is heat sink
It is heat sink (3) with the second graphite, transition heat sink is provided between first graphite heat sink (2) and second graphite heat sink (3)
(4), first graphite heat sink (2) and the transition heat sink (4) are welded, the transition heat sink (4) and second graphite thermal
Heavy (3) welding.
3. capsulation structure for semiconductor laser as claimed in claim 2, it is characterised in that: be arranged on the transition heat sink (4)
Have semiconductor laser (5), the semiconductor laser (5) and the transition heat sink (4) are welded.
4. capsulation structure for semiconductor laser as claimed in claim 3, it is characterised in that: the semiconductor laser (5) is logical
Spun gold component (6) is crossed to be connected with electrode (7).
5. capsulation structure for semiconductor laser as described in any one of claims 1 to 4, it is characterised in that: the basal heat
Heavy (1) is that copper is heat sink, and the transition heat sink (4) is that copper tungsten is heat sink, and the semiconductor laser (5) is edge emitting formula single tube half
Conductor laser, the edge emitting formula single-tube semiconductor laser use c-mount encapsulating structure.
6. a kind of preparation method of capsulation structure for semiconductor laser, it is characterised in that: described method includes following steps:
1) to basis it is heat sink clean after keep drying；
2) to the heat sink progress surface metalation processing of auxiliary；
3) by the auxiliary handled well is heat sink and transition heat sink is welded；
4) mutual welding transition is heat sink and auxiliary is heat sink is placed in the first solder in basic the first solder layer of heat sink upper is formationed
It is welded on layer.
7. the preparation method of capsulation structure for semiconductor laser as claimed in claim 6, it is characterised in that: the method is also wrapped
It includes:
The second solder layer is formed in transition heat sink, and fixed semiconductor laser is placed on second solder layer and is welded
It connects；
After the semiconductor laser temperature being welded is reduced to room temperature, using gold wire bonding machine, by semiconductor laser upper surface
It is connected with electrode top using spun gold component.
8. the preparation method of capsulation structure for semiconductor laser as claimed in claim 6, it is characterised in that: the auxiliary is heat sink
Pass through golden tin solder with the transition heat sink closely to connect.
9. the preparation method of capsulation structure for semiconductor laser as claimed in claim 6, it is characterised in that: second solder
Layer is prepared by thermal evaporation or electron beam evaporation process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810833016.9A CN109560456B (en) | 2018-07-26 | 2018-07-26 | Semiconductor laser packaging structure and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810833016.9A CN109560456B (en) | 2018-07-26 | 2018-07-26 | Semiconductor laser packaging structure and preparation method thereof |
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| Publication Number | Publication Date |
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| CN109560456A true CN109560456A (en) | 2019-04-02 |
| CN109560456B CN109560456B (en) | 2021-04-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350395A (en) * | 2019-07-23 | 2019-10-18 | 长春理工大学 | A kind of semiconductor laser conduction cooling package structure conduction cooling package structure |
| CN110729629A (en) * | 2019-10-30 | 2020-01-24 | 长春理工大学 | Semiconductor laser packaging structure based on graphene film and preparation method thereof |
| CN112821187A (en) * | 2020-12-30 | 2021-05-18 | 西安立芯光电科技有限公司 | Single-bar packaging method for semiconductor laser |
| CN114552370A (en) * | 2022-02-21 | 2022-05-27 | 桂林市啄木鸟医疗器械有限公司 | Semiconductor laser and method for manufacturing semiconductor laser |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1189000A (en) * | 1997-01-09 | 1998-07-29 | 日本电气株式会社 | Semiconductor laser module |
| US20060239319A1 (en) * | 2002-06-15 | 2006-10-26 | Kozlovsky William J | Chip carrier apparatus and method |
| CN101465516A (en) * | 2009-01-09 | 2009-06-24 | 西安阿格斯光电科技有限公司 | High-power semiconductor laser and preparation method thereof |
| CN101741011A (en) * | 2009-12-24 | 2010-06-16 | 中国科学院上海微系统与信息技术研究所 | Low-stress encapsulating device and method for semiconductor laser to reliably work in wide temperature region |
| CN102005697A (en) * | 2010-10-15 | 2011-04-06 | 北京大学 | Line cavity laser with super-narrow line width based on parallel feedback |
| CN102237636A (en) * | 2010-04-26 | 2011-11-09 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
| CN102386558A (en) * | 2011-11-21 | 2012-03-21 | 无锡亮源激光技术有限公司 | Single emitter with lead wire circuit board |
| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| CN105182548A (en) * | 2015-10-30 | 2015-12-23 | 山东华光光电子有限公司 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
| US20160204575A1 (en) * | 2013-08-21 | 2016-07-14 | Osram Opto Semiconductors Gmbh | Laser diode with cooling along even the side surfaces |
| CN106207742A (en) * | 2016-09-20 | 2016-12-07 | 长春长理光学精密机械有限公司 | A kind of novel C Mount single-emission-cavity semiconductor laser |
| CN206697749U (en) * | 2016-12-30 | 2017-12-01 | 华星光通科技股份有限公司 | Composite heat dissipation substrate structure |
-
2018
- 2018-07-26 CN CN201810833016.9A patent/CN109560456B/en not_active Expired - Fee Related
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1189000A (en) * | 1997-01-09 | 1998-07-29 | 日本电气株式会社 | Semiconductor laser module |
| US20060239319A1 (en) * | 2002-06-15 | 2006-10-26 | Kozlovsky William J | Chip carrier apparatus and method |
| CN101465516A (en) * | 2009-01-09 | 2009-06-24 | 西安阿格斯光电科技有限公司 | High-power semiconductor laser and preparation method thereof |
| CN101741011A (en) * | 2009-12-24 | 2010-06-16 | 中国科学院上海微系统与信息技术研究所 | Low-stress encapsulating device and method for semiconductor laser to reliably work in wide temperature region |
| CN102237636A (en) * | 2010-04-26 | 2011-11-09 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
| CN102005697A (en) * | 2010-10-15 | 2011-04-06 | 北京大学 | Line cavity laser with super-narrow line width based on parallel feedback |
| CN102386558A (en) * | 2011-11-21 | 2012-03-21 | 无锡亮源激光技术有限公司 | Single emitter with lead wire circuit board |
| US20160204575A1 (en) * | 2013-08-21 | 2016-07-14 | Osram Opto Semiconductors Gmbh | Laser diode with cooling along even the side surfaces |
| CN103746287A (en) * | 2014-01-10 | 2014-04-23 | 中国科学院苏州生物医学工程技术研究所 | Packaging structure applied to long-pulse-width and high-power semiconductor laser |
| CN105182548A (en) * | 2015-10-30 | 2015-12-23 | 山东华光光电子有限公司 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
| CN106207742A (en) * | 2016-09-20 | 2016-12-07 | 长春长理光学精密机械有限公司 | A kind of novel C Mount single-emission-cavity semiconductor laser |
| CN206697749U (en) * | 2016-12-30 | 2017-12-01 | 华星光通科技股份有限公司 | Composite heat dissipation substrate structure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110350395A (en) * | 2019-07-23 | 2019-10-18 | 长春理工大学 | A kind of semiconductor laser conduction cooling package structure conduction cooling package structure |
| CN110729629A (en) * | 2019-10-30 | 2020-01-24 | 长春理工大学 | Semiconductor laser packaging structure based on graphene film and preparation method thereof |
| CN112821187A (en) * | 2020-12-30 | 2021-05-18 | 西安立芯光电科技有限公司 | Single-bar packaging method for semiconductor laser |
| CN114552370A (en) * | 2022-02-21 | 2022-05-27 | 桂林市啄木鸟医疗器械有限公司 | Semiconductor laser and method for manufacturing semiconductor laser |
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