CN105182548A - High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device - Google Patents
High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device Download PDFInfo
- Publication number
- CN105182548A CN105182548A CN201510728776.XA CN201510728776A CN105182548A CN 105182548 A CN105182548 A CN 105182548A CN 201510728776 A CN201510728776 A CN 201510728776A CN 105182548 A CN105182548 A CN 105182548A
- Authority
- CN
- China
- Prior art keywords
- heat sink
- semiconductor laser
- optical fiber
- copper
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Abstract
The invention provides a high-performance semiconductor laser device convenient for reshaping an optical fiber and an encapsulation method of the high-performance semiconductor laser device. The semiconductor laser device comprises a copper heat sink, a chip, a secondary heat sink and a reshaped optical fiber, wherein the secondary heat sink is welded on the upper surface of the copper heat sink; the chip is welded on a chip welding region; insulating sheets are welded on the two sides of the upper surface of the copper heat sink; a positive electrode piece and a negative electrode piece are welded on the two insulating sheets respectively; the positive electrode piece and the upper surface of the secondary heat sink, the negative electrode piece and a negative electrode region on the secondary heat sink, and a chip negative electrode and a negative electrode connection region are connected by gold wires; and the reshaped optical fiber is fixed on the copper heat sink and is arranged in front of a light-emitting region of the chip. The high-performance semiconductor laser device has a simple structure and is convenient to manufacture; the chip and the copper heat sink are insulated; the problem that the copper heat sink is charged is solved; the reliability of the semiconductor laser device can be improved and the service life of the semiconductor laser device can be prolonged; and the problems that a cavity surface of the semiconductor laser device is polluted by ultraviolet curing glue and the reshaped optical fiber is displaced in a working process of the semiconductor laser device can be avoided, and the reliability and yield of products are improved.
Description
Technical field
The present invention relates to a kind of high-performance semiconductor laser instrument and the method for packing thereof of being convenient to optical fiber for reforming, belong to semiconductor laser field.
Background technology
Semiconductor laser, due to advantages such as volume is little, lightweight, conversion efficiency is high, long service life, is widely used in fields such as medical treatment, display, pumping, industrial processes.In such applications, require that semiconductor laser has the feature of long-life, high stability, high reliability.In recent years, along with the develop rapidly of epitaxial growth of semiconductor material growing technology, semiconductor laser waveguiding structure optimisation technique and passivating cavity surface technology, the performance of semiconductor laser is greatly improved, attainable optical power density is also more and more higher, the heat radiation that higher luminous power exports also noise spectra of semiconductor lasers is had higher requirement, therefore, the encapsulating structure of noise spectra of semiconductor lasers and technique are also just had higher requirement.
Due to semiconductor laser itself, define the facular model of the fast axle angle of divergence of output beam much larger than slow axis divergence, in application process, need fast axle to compress.Shaping post mirror is the important method of fast axial compression contracting, but due to shaping post mirror size comparatively large, limit the usage space of semiconductor laser, and shaping post mirror cost is higher, for power semiconductor laser in large usage quantity on market, economic benefit is inconsiderable.And to adopt shaping optical fiber noise spectra of semiconductor lasers to carry out fast axial compression contracting be at present easy, the most most economical mode.The semiconductor laser of traditional C-Mount type encapsulating structure as shown in Figure 1, direct chip attachment is on copper is heat sink, the negative pole of chip is drawn by a negative electrode plate, then shaping optical fiber is fixed on the heat sink two ends of copper, thus the compression realized fast axle, but the thermal expansivity heat sink due to chip and copper does not mate, this packing forms can only adopt soft solder indium to weld, and indium solder due to exist oxidizable, easily form indium when high temperature sintering and must cause shorted laser or block the problems such as luminous zone, had a strong impact on long-term reliability and the stability of laser instrument.And this encapsulating structure, copper is heat sink can positively charged, uses middlely to there is charged safety problem.
Chinese patent literature CN204243452U discloses a kind of Conduction cooled type high-power semiconductor laser of heat sink insulation, by laser chip and heat sink between increase insulation spacer design, achieve heat sink not live line work, solve the charged safety problem caused of semiconductor laser thermal sediment of traditional C-mount type encapsulating structure.But because shaping optical fiber can only be fixed on insulation spacer by this structure, and the temperature conductivity of insulation spacer is heat sink much smaller than copper, in laser works process, the temperature of insulating trip is higher, the ultraviolet glue of fixing shaping optical fiber can be caused to soften, thus the position causing facula deviation original.And because insulating trip size is less, in reforming process, ultraviolet glue very easily pollutes luminous zone, causes laser fails, affects the yield rate of product.
Chinese patent literature CN103532006A discloses a kind of semiconductor laser, comprise heat sink, chip and be arranged on heat sink on negative pole band, welding insulation heat-conducting layer on heat sink, chips welding is on thermal insulation layer, thermal insulation layer is welded with weld tabs, weld tabs is connected with the positive pole band corresponding with negative pole band, by using bipolar charging electrode structure to introduce power supply source, solves the problem that the semiconductor laser thermal sediment of traditional C-mount type encapsulating structure is charged.But because in this structure, thermal insulation layer is welded direct to heat sink upper surface, tube core light-emitting area is far away apart from heat sink upper surface, must with more ultraviolet glue shaping optical fiber could be fixed on heat sink on, shaping optical fiber can be caused so unsettled too serious, insecure, the situation there will be displacement in later stage work, coming off.
Summary of the invention
For existing semiconductor laser Problems existing on encapsulating structure and shaping technique, the invention provides a kind of easy and simple to handle, be convenient to high-performance semiconductor laser instrument and the method for packing thereof of optical fiber for reforming.
The high-performance semiconductor laser instrument being convenient to optical fiber for reforming of the present invention, by the following technical solutions:
This semiconductor laser, comprise that copper is heat sink, electrode film, negative electrode plate, chip, secondary heat sink and shaping optical fiber, the upper surface middle that copper is heat sink is provided with groove, be welded with secondary heat sink in this groove, secondary heat sink on be provided with negative pole bonding pad and chips welding district, chips welding is in chips welding district; The both sides of copper is heat sink upper surface are all welded with insulating trip, and two insulating trips are welded with electrode film and negative electrode plate respectively; Electrode film with secondary heat sink on chips welding district between, negative electrode plate with secondary heat sink on negative pole bonding pad between and be all connected with gold thread between chip negative pole with negative pole bonding pad; Shaping optical fiber is fixed on the two ends on the heat sink leading flank top of copper, is placed in the front, luminous zone of chip, and parallel with insulating trip Width.
The surface that described copper is heat sink is coated with layer gold.
Described electrode film and negative electrode plate are gold plated copper sheets.
Described insulating trip forms at the upper and lower surface metal cladding of insulator.
Described time heat sink is an insulator, and this insulator lower surface is coated with metal level, and upper surface is coated with metal level in negative pole bonding pad and chips welding district.
Described shaping optical fiber is coated with optical anti-reflective film.
The above-mentioned method for packing being convenient to the high-performance semiconductor laser instrument of optical fiber for reforming, comprises the following steps:
(1) prefabricated golden tin solder in secondary heat sink chips welding district, by chips welding on golden tin solder;
(2) at both sides and the prefabricated solder of groove (indium solder, indium tin solder, tin-bismuth solder or indally) of the heat sink upper surface of copper;
(3) on two insulating trips, weld electrode film and negative electrode plate respectively, then with secondary heat sink together be welded on copper heat sink on correspondence position;
(4) adopt gold thread by chip negative pole with secondary heat sink on negative pole bonding pad be connected;
(5) adopt gold thread by secondary heat sink on negative pole bonding pad and negative electrode plate and secondary heat sink on chips welding district be connected with electrode film;
(6) under semiconductor laser working current condition, shaping optical fiber is placed on chip light-emitting district, adjusts to required facula position;
(7) shaping optical fiber is fixed to copper heat sink on.
Structure of the present invention is simple, easy to operate, by adding secondary heat sink form in the middle recessing of copper heat sink upper surface, achieves chip and the heat sink insulation of copper, solves the heat sink charged problem of copper.And secondary heat sink prefabricated golden tin solder, can improve reliability of semiconductor laser and serviceable life.Meanwhile, adopt Training system shaping optical fiber being fixed on the heat sink two ends of copper, the problem of the pollution in face, ultra-violet curing glue noise spectra of semiconductor lasers chamber and semiconductor laser shaping optical fiber displacement in the course of the work can be avoided, improve reliability and the yield rate of product.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the semiconductor laser of traditional C-Mount type encapsulating structure.
Fig. 2 is the schematic diagram that the high-performance semiconductor laser instrument of optical fiber for reforming is convenient in the present invention.
Fig. 3 is the secondary heat sink structural representation being welded with chip in the present invention.
Wherein, 1, copper is heat sink, 2, negative electrode plate, 3, electrode film, 4, secondary heat sink, 5, chip, 6, gold thread, 7, groove, 8, insulating trip, 9, shaping optical fiber, 10, solidification glue, 11, negative pole bonding pad, 12, chips welding district, 13, counterbore.
Embodiment
As shown in Figures 2 and 3, the high-performance semiconductor laser instrument being convenient to optical fiber for reforming of the present invention, comprise that copper is heat sink 1, electrode film 3, negative electrode plate 2, secondary heat sink 4, chip 5, insulating trip 8 and shaping optical fiber 9.Copper is heat sink 1 surface be coated with layer gold, its upper surface middle is provided with groove 7, and leading flank is provided with counterbore 13.The center of groove 7 is provided with times heat sink 4, the secondary length of heat sink 4 and the wide length that is all less than groove 7 and wide, and thickness is consistent with the degree of depth of groove 7; The secondary upper surface of heat sink 4 is provided with negative pole bonding pad 11 and chips welding district 12, secondary heat sink 4 is an insulator (can adopt aluminium nitride, aluminium oxide, adamas or silicon nitride), and this insulator lower surface is coated with metal level, upper surface is coated with metal level, without metal level between negative pole bonding pad 11 and chips welding district 12 in negative pole bonding pad 11 with chips welding district 12.Chip 5 is welded in the chips welding district 12 of secondary heat sink 4.The both sides of copper is heat sink 1 upper surface are all welded with insulating trip 8, and insulating trip 8 forms at the upper and lower surface metal cladding of insulator (can adopt aluminium nitride, aluminium oxide, adamas or silicon nitride).Two insulating trips 8 are respectively arranged with electrode film 3 and negative electrode plate 2, electrode film 3 and negative electrode plate 2 are the copper sheet being coated with layer gold.Shaping optical fiber 9 is placed on the front, luminous zone of chip 5, and parallel with the Width of insulating trip 8.Shaping optical fiber 9 is fixed on the both sides, leading flank top of copper heat sink 1 by solidification glue 10, and by inserting screw fixed copper heat sink 1 in counterbore 13.Shaping optical fiber 9 is coated with optical anti-reflective film; Solidification glue 10 is ultra-violet curing glue.Between electrode film 3 with secondary heat sink 4 upper surfaces, negative electrode plate 2 with secondary heat sink on negative pole bonding pad 11 between and be all connected with gold thread 6 between chip negative pole with negative pole bonding pad 11.
The method for packing of above-mentioned semiconductor laser, as described below:
(1) prefabricated golden tin solder in secondary heat sink chips welding district, by chips welding on golden tin solder;
(2) at both sides and the prefabricated solder of groove (indium solder, indium tin solder, tin-bismuth solder or indally) of the heat sink upper surface of copper;
(3) on two insulating trips, weld electrode film and negative electrode plate respectively, then with secondary heat sink together be welded on copper heat sink on correspondence position;
(4) adopt gold thread by chip negative pole and secondary heat sink on negative pole bonding pad be connected;
(5) adopt gold thread by secondary heat sink on negative pole bonding pad and negative electrode plate and secondary heat sink on chips welding district be connected with electrode film;
(6) under semiconductor laser working current condition, shaping optical fiber is placed on chip light-emitting district, adjusts to required facula position;
(7) by shaping optical fiber by solidification glue be fixed to copper heat sink on, with ultra violet lamp to solidification adhesive curing, and pass through in counterbore 13, insert screw fixed copper heat sink 1.
Claims (7)
1. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming for one kind, comprise that copper is heat sink, electrode film, negative electrode plate, chip, secondary heat sink and shaping optical fiber, it is characterized in that, the upper surface middle that copper is heat sink is provided with groove, be welded with secondary heat sink in this groove, secondary heat sink upper surface is provided with negative pole bonding pad and chips welding district, and chips welding is in chips welding district; The both sides of copper is heat sink upper surface are all welded with insulating trip, and two insulating trips are welded with electrode film and negative electrode plate respectively; Electrode film with secondary heat sink on chips welding district between, negative electrode plate with secondary heat sink on negative pole bonding pad between and be all connected with gold thread between chip negative pole with negative pole bonding pad; Shaping optical fiber is fixed on the two ends on the heat sink leading flank top of copper, is placed in the front, luminous zone of chip, and parallel with insulating trip Width.
2. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming as claimed in claim 1, it is characterized in that, the surface that described copper is heat sink is coated with layer gold.
3. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming as claimed in claim 1, it is characterized in that, described electrode film and negative electrode plate are gold plated copper sheets.
4. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming as claimed in claim 1, it is characterized in that, described insulating trip forms at the upper and lower surface metal cladding of insulator.
5. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming as claimed in claim 1, it is characterized in that, described time heat sink is an insulator, and this insulator lower surface is coated with metal level, and upper surface is coated with metal level in negative pole bonding pad and chips welding district.
6. be convenient to the high-performance semiconductor laser instrument of optical fiber for reforming as claimed in claim 1, it is characterized in that, described shaping optical fiber is coated with optical anti-reflective film.
7. the high-performance semiconductor laser instrument being convenient to optical fiber for reforming according to claim 1, is characterized in that, the above-mentioned method for packing being convenient to the high-performance semiconductor laser instrument of optical fiber for reforming, comprises the following steps:
(1) prefabricated golden tin solder in secondary heat sink chips welding district, by chips welding on golden tin solder;
(2) at both sides and the prefabricated solder of groove of the heat sink upper surface of copper;
(3) on two insulating trips, weld electrode film and negative electrode plate respectively, then with secondary heat sink together be welded on copper heat sink on correspondence position;
(4) adopt gold thread by chip negative pole and secondary heat sink on negative pole bonding pad be connected;
(5) adopt gold thread by secondary heat sink on negative pole bonding pad and negative electrode plate and secondary heat sink on chips welding district be connected with electrode film;
(6) under semiconductor laser working current condition, shaping optical fiber is placed on chip light-emitting district, adjusts to required facula position;
(7) shaping optical fiber is fixed to copper heat sink on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728776.XA CN105182548A (en) | 2015-10-30 | 2015-10-30 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510728776.XA CN105182548A (en) | 2015-10-30 | 2015-10-30 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105182548A true CN105182548A (en) | 2015-12-23 |
Family
ID=54904728
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510728776.XA Pending CN105182548A (en) | 2015-10-30 | 2015-10-30 | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105182548A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105938977A (en) * | 2016-07-12 | 2016-09-14 | 西安炬光科技股份有限公司 | Method and system for forming linear light spots |
| CN106207742A (en) * | 2016-09-20 | 2016-12-07 | 长春长理光学精密机械有限公司 | A kind of novel C Mount single-emission-cavity semiconductor laser |
| CN106340794A (en) * | 2016-04-07 | 2017-01-18 | 深圳市东飞凌科技有限公司 | Heat sink gasket and laser device comprising same |
| CN106451062A (en) * | 2016-09-20 | 2017-02-22 | 长春理工大学 | High-power semiconductor laser chip conductive heat dissipation package heat sink |
| CN109560456A (en) * | 2018-07-26 | 2019-04-02 | 长春理工大学 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
| CN112821187A (en) * | 2020-12-30 | 2021-05-18 | 西安立芯光电科技有限公司 | Single-bar packaging method for semiconductor laser |
| CN113054532A (en) * | 2019-12-26 | 2021-06-29 | 山东华光光电子股份有限公司 | Composite laser packaging device for wearing and preparation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001343561A (en) * | 2000-05-31 | 2001-12-14 | Kyocera Corp | Optical module |
| US20020118714A1 (en) * | 2000-10-27 | 2002-08-29 | The Furukawa Electric Co., Ltd | Heat sink, semiconductor laser device, semiconductor laser module and raman amplifier |
| US20090190619A1 (en) * | 2008-01-30 | 2009-07-30 | Shenzhen Century Epitech Photonics Technology Co. Ltd. | Semiconductor laser package |
| CN201402912Y (en) * | 2009-01-09 | 2010-02-10 | 西安阿格斯光电科技有限公司 | High-power semiconductor laser |
| CN102570291A (en) * | 2011-12-20 | 2012-07-11 | 西安炬光科技有限公司 | Conduction cooling type high-power semiconductor laser and preparation method thereof |
| CN103532006A (en) * | 2013-10-21 | 2014-01-22 | 重庆航伟光电科技有限公司 | Semiconductor laser |
-
2015
- 2015-10-30 CN CN201510728776.XA patent/CN105182548A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001343561A (en) * | 2000-05-31 | 2001-12-14 | Kyocera Corp | Optical module |
| US20020118714A1 (en) * | 2000-10-27 | 2002-08-29 | The Furukawa Electric Co., Ltd | Heat sink, semiconductor laser device, semiconductor laser module and raman amplifier |
| US20090190619A1 (en) * | 2008-01-30 | 2009-07-30 | Shenzhen Century Epitech Photonics Technology Co. Ltd. | Semiconductor laser package |
| CN201402912Y (en) * | 2009-01-09 | 2010-02-10 | 西安阿格斯光电科技有限公司 | High-power semiconductor laser |
| CN102570291A (en) * | 2011-12-20 | 2012-07-11 | 西安炬光科技有限公司 | Conduction cooling type high-power semiconductor laser and preparation method thereof |
| CN103532006A (en) * | 2013-10-21 | 2014-01-22 | 重庆航伟光电科技有限公司 | Semiconductor laser |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340794A (en) * | 2016-04-07 | 2017-01-18 | 深圳市东飞凌科技有限公司 | Heat sink gasket and laser device comprising same |
| CN105938977A (en) * | 2016-07-12 | 2016-09-14 | 西安炬光科技股份有限公司 | Method and system for forming linear light spots |
| CN106207742A (en) * | 2016-09-20 | 2016-12-07 | 长春长理光学精密机械有限公司 | A kind of novel C Mount single-emission-cavity semiconductor laser |
| CN106451062A (en) * | 2016-09-20 | 2017-02-22 | 长春理工大学 | High-power semiconductor laser chip conductive heat dissipation package heat sink |
| CN109560456A (en) * | 2018-07-26 | 2019-04-02 | 长春理工大学 | A kind of capsulation structure for semiconductor laser and preparation method thereof |
| CN109560456B (en) * | 2018-07-26 | 2021-04-23 | 长春理工大学 | Semiconductor laser packaging structure and preparation method thereof |
| CN113054532A (en) * | 2019-12-26 | 2021-06-29 | 山东华光光电子股份有限公司 | Composite laser packaging device for wearing and preparation method |
| CN112821187A (en) * | 2020-12-30 | 2021-05-18 | 西安立芯光电科技有限公司 | Single-bar packaging method for semiconductor laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105182548A (en) | High-performance semiconductor laser device convenient for reshaping optical fiber and encapsulation method of high-performance semiconductor laser device | |
| CN202333437U (en) | Single-tube laser with lead circuit board | |
| CN103779782B (en) | A kind of high-average power diode-pumped nd yag laser module and preparation method thereof | |
| CN203660271U (en) | 10G micro high-speed laser emitter | |
| CN107017545A (en) | One kind improves Nd:The method and device of YAG laser output characteristics | |
| CN103633549B (en) | A kind of method for packing of semiconductor laser array single chip | |
| CN102820610B (en) | Diode pumping laser gain module and preparation method thereof | |
| CN101626139A (en) | TO packaging technology of semiconductor laser and packaging tube base | |
| CN109980498A (en) | A kind of high power pulse-width tunable semiconductor laser module | |
| CN201256245Y (en) | Laser diode encapsulation | |
| CN204144672U (en) | Based on the tail optical fiber output semiconductor laser of array core chip COS | |
| CN203983728U (en) | A kind of high power semiconductor lasers that adopts aluminium base encapsulation | |
| CN102510002A (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
| CN102386558A (en) | Single emitter with lead wire circuit board | |
| CN201374499Y (en) | Long service life microchannel cooling heat sink for semiconductor laser two-dimensional array | |
| CN207690806U (en) | A kind of solar panel | |
| CN110829157A (en) | Optical fiber laser cooling device and method based on flowing low-boiling-point liquid | |
| CN102610737A (en) | Heat-radiating device of high-power LED (Light Emitting Diode) | |
| CN202405611U (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
| CN106058636B (en) | Conduction cooling high-power semiconductor laser | |
| CN204067849U (en) | A kind of novel semiconductor laser case package structure | |
| CN102593225A (en) | Method for solving heat dissipation problem of concentrating photovoltaic power generation system | |
| CN103457150A (en) | Fiber-coupled output semiconductor laser package structure and package method thereof | |
| CN102646923B (en) | High-power water-cooling formula semiconductor laser | |
| CN203649661U (en) | Welding system used for packaging of light emitter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant after: SHANDONG HUAGUANG OPTOELECTRONICS CO., LTD. Address before: Tianchen Avenue high tech Zone of Ji'nan City, Shandong Province, No. 1835 250101 Applicant before: Shandong Huaguang Photoelectronic Co., Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151223 |