CN102820610B - Diode pumping laser gain module and preparation method thereof - Google Patents
Diode pumping laser gain module and preparation method thereof Download PDFInfo
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- CN102820610B CN102820610B CN201210325578.5A CN201210325578A CN102820610B CN 102820610 B CN102820610 B CN 102820610B CN 201210325578 A CN201210325578 A CN 201210325578A CN 102820610 B CN102820610 B CN 102820610B
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Abstract
The invention discloses a diode pumping laser gain module and a preparation method thereof. A front end plate of the gain module and even annular pumping laser groups are fastened together, the even annular pumping laser groups and odd annular pumping laser groups are sequentially connected in series at stagger, and every two annular pumping laser groups are sealed and fixed. A back end plate of the gain module and the odd annular pumping laser groups are connected in series, and cooling liquid is injected inside to form a gain module main body. The gain module main body is connected with a base through a semiconductor cooler to timely exchange heat. Current is exerted to a diode laser to enable the diode laser to emit laser pumping laser pumping laser media. Heat produced by the laser pumping laser pumping laser media is transmitted to an annular inward polygon heat sink through cooling liquid, and the heat and heat produced by the diode laser are transmitted to the base for cooling through the semiconductor cooler. The gain module is simple in structure, convenient to install, good in environmental suitability and capable of well working at ambient temperature of -40DEG C to 60 DEG C.
Description
Technical field
The invention belongs to diode laser field, be specifically related to a kind of diode-pumped nd yag laser gain module and preparation method thereof, as solid state laser pumping source.
Background technology
When diode laser gain module is applied to the field such as laser ranging, laser fuze, require that it has compact conformation, lightweight, high efficiency, reliable in hot and bitter cold, mechanical shock vibration, the feature such as non-maintaining can be born.
In bar-shaped diode-pumped nd yag laser gain module, due to diode laser and laser medium higher to cooling requirements, all need cooling fluid to cool in real time it.Name is called that the heat radiation of the heat radiation and laser medium describing diode laser in the patent documentation (patent No. is CN 1674372A) of " polygonal large power semiconductor laser laminated array module " all adopts the mode of water-cooled, but water-cooling system cannot normally work under lower than the environment of 0 DEG C, limits the environmental suitability of pump module.And water-cooling structure is complicated, pump light just can must be irradiated on dielectric rod by cooling water and glass tube, and reduce the effective absorption of rod to pump light, the gain of module is relatively on the low side.Name is called in " laser gain module of semiconductor laser monotube combined side pumped solid-state laser device " patent documentation (number of patent application is 200910081390.9) and describes the heat dissipation problem being solved diode laser by modes such as heat pipes, but the heat dissipation problem of laser medium is not considered, when high power pump, module because medium heat effects, cannot normally can work.
Summary of the invention
In order to overcome the cooling complex structure of diode-pumped nd yag laser gain module in prior art, environmental suitability is poor, gain is on the low side deficiency, an object of the present invention is to provide a kind of diode-pumped nd yag laser gain module.Another object of the present invention is to provide a kind of preparation method of diode-pumped nd yag laser gain module.Described diode-pumped nd yag laser gain module can provide high power, high efficiency pumping, has uniform fluorescence distribution, and can work in the presence of a harsh environment, structure is simple, reliability is higher.
A kind of diode-pumped nd yag laser gain module of the present invention, be characterized in, described gain module comprises rod-shaped laser medium, cooling fluid, multiple even number annular pump laser group, multiple odd number annular pump laser group, front end-plate, end plate, semiconductor cooler, base, hygrosensor, O RunddichtringO, excellent sealed briquette; Its annexation is, described front end-plate is fixedly connected with even number annular pump laser group, and even number annular pump laser group is alternately connected in series successively with odd number annular pump laser group, and is connected with end plate; By the sealing of O RunddichtringO between front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, inner formation laser pump cavity, is injected with cooling fluid in laser pump cavity, forms diode-pumped nd yag laser gain module main body; Semiconductor cooler is arranged between diode-pumped nd yag laser gain module main body and base, is fixedly connected with diode-pumped nd yag laser gain module main body, base; Hygrosensor is arranged on the side of an annular pump laser array in diode-pumped nd yag laser gain module main body; Rod-shaped laser medium is successively through front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, and the two ends of rod-shaped laser medium are fixed on the end face of front end-plate, end plate respectively by excellent sealed briquette.
Described odd number annular pump laser group, comprises diode laser chip, secondary heat sink, insulating ceramic film, two extraction electrodes, electrode sealed briquette, organic glass observation windows, ring-type inner polygon is heat sink; Wherein diode laser chip be arranged on two time heat sink between, weld in sandwich structure and with insulating ceramic film and forms the secondary encapsulating structure of " mountain " font; On attachment of being contacted successively by multiple " mountain " font time encapsulating structure is heat sink to ring-type inner polygon; First diode laser chip in two extraction electrodes are heat sink with ring-type inner polygon respectively and the last diode laser chip are connected draws.
Described even number annular pump laser group is identical with the basic structure of odd number annular pump laser group.
Described cooling fluid is to the transmitance of near-infrared laser higher than 97%, and working temperature is-40 DEG C ~ 60 DEG C.
Described sealing ring is O RunddichtringO.
The oxygen-free copper that the described heat sink employing of ring-type inner polygon is gold-plated or other thermal conductivities are higher than 150k/Wm
-1k
-1high thermal conductivity material make.
The oxygen-free copper that described secondary heat sink employing is gold-plated or other thermal conductivities are higher than 150k/Wm
-1k
-1high thermal conductivity material make.
The quantity of described even number annular pump laser group is identical with the quantity of odd number annular pump laser group or differ one,
The limit number that described ring-type inner polygon is heat sink is the odd number on three ~ 15 limits.
The number that in the present invention, even number annular pump laser group is arranged is 1 ~ 8, and the number that odd number annular pump laser group is arranged is 1 ~ 8.
The preparation method of diode-pumped nd yag laser gain module of the present invention, comprises the steps:
A. between diode laser chips welding is time heat sink at two, then insulating ceramic film is welded on time heat sink bottom, makes " mountain " font time encapsulating structure;
B. " mountain " font welded time encapsulation is installed on the heat sink each limit of ring-type inner polygon successively, and in the bottom solder application of insulating ceramics, an extraction electrode is connected with first diode laser chip, another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
C. put into reflow soldering carry out disposable welding by heat sink for the polygon being connected to diode laser chip, form odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate, all even number annular pump laser groups of having welded, odd number annular pump laser group, end plate are assembled by screw serial connection, rod-shaped laser medium is successively through front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, and rod-shaped laser medium two ends are separately fixed on the end face of front end-plate, end plate;
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. cooling fluid is injected in optically focused cavity from the liquid injection port of submerged liquid-cooled bar-shaped diode-pumped nd yag laser gain module body top, the liquid level of cooling fluid is made to flood extraction electrode, by polymethyl methacrylate window sealing liquid injection port, form diode-pumped nd yag laser gain module main body;
H. semiconductor cooler is arranged between diode-pumped nd yag laser gain module main body, base, and smears thermal grease conduction;
I. hygrosensor is installed in one of them the annular pump laser array side in diode-pumped nd yag laser gain module main body, forms diode-pumped nd yag laser gain module.
Diode-pumped nd yag laser gain module of the present invention, electrical connection between all odd numbers, even number annular pump laser group adopts cascaded structure, during work, driving power output line is connected with positive and negative electrode, by applying electric current to diode laser, make diode laser emission laser pumping rod-shaped laser medium.The heat that in work, laser medium produces by cooling fluid be transmitted to ring-type inner polygon heat sink on, with diode laser produce heat together with by semiconductor cooler be transmitted to base heat radiation.
In the present invention, diode-pumped nd yag laser gain module adopts the uniform pumping version of regular polygon, the emission spectrum of multiple diode laser can be realized to the uniform pumping of bar-shaped medium, in effective increase pumping homogeneity, the reduction course of work, the thermal stress of laser medium, improves pumping efficiency.Compared with traditional water-cooled diode laser side-pump laser module, module of the present invention is without the need to cooling duct, and structure is simple, have employed Modular assembled structure; The cooling of rod-shaped laser medium adopts heat conducting and radiating mode, and diode laser and laser medium can realize good heat radiating, good environmental adaptability, can in ambient temperature-40 DEG C ~ 60 DEG C works fine.
Accompanying drawing explanation
Fig. 1 is diode-pumped nd yag laser gain module structural representation of the present invention;
Fig. 2 is diode-pumped nd yag laser gain module front of the present invention cross-sectional view;
Fig. 3 is the odd number annular pump laser group structure cutaway view in diode-pumped nd yag laser gain module of the present invention;
In figure: 1. bar-shaped gain media 2. cooling fluid 3. even number annular pump laser group I 4. odd number annular pump laser group I 5. front end-plate 6. end plate 7. semiconductor cooler 8. base 9. hygrosensor 10. O RunddichtringO 11. rod sealed briquette 12.U type electrode 13. liquid injection port 14 diode laser chip 15. heat sink 19. polymethyl methacrylate window 20.L type electrodes 25. times heat sink II of heat sink I 16. insulating ceramic film 17. extraction electrode 18. ring-type inner polygons.
Embodiment
Below in conjunction with accompanying drawing, diode-pumped nd yag laser gain module of the present invention is described further.
Embodiment 1
Fig. 1 is diode-pumped nd yag laser gain module structural representation of the present invention, and Fig. 2 is diode-pumped nd yag laser gain module side cross-section cutaway view of the present invention.In Fig. 1, Fig. 2, diode-pumped nd yag laser gain module of the present invention comprises bar-shaped gain media 1, cooling fluid 2, even number annular pump laser group, odd number annular pump laser group, front end-plate 5, end plate 6, semiconductor cooler 7, base 8, hygrosensor 9, O RunddichtringO 10, excellent sealed briquette 11, U-shaped electrode 12, L-type electrode I 20.In the present embodiment, be provided with three even number annular pump laser groups, be respectively even number annular pump laser group I 3, even number annular pump laser group II, even number annular pump laser group III; Be provided with two odd number annular pump laser groups, be respectively odd number annular pump laser group I 4, odd number annular pump laser group II; Be provided with 6 O RunddichtringOs, O RunddichtringO 10 is one of them, and excellent sealed briquette is provided with two, rod sealed briquette 11 is one of them, and U-shaped electrode is provided with four, and U-shaped electrode 12 is one of them, L-type electrode is provided with two, is L-type electrode I 20, L-type electrode II respectively.Its annexation is, described front end-plate 5 is fixedly connected with even number annular pump laser group I 3, even number annular pump laser group I 3, odd number annular pump laser group I 4, even number annular pump laser group II, odd number annular pump laser group II, even number annular pump laser group III are connected in series successively, and end plate 6 is connected in series with even number annular pump laser group III.Wherein, realize being electrically connected by U-shaped electrode between even number annular pump laser group with odd number annular pump laser group, the positive pole of even number annular pump laser group III 3 is drawn by L-type electrode I 20, and the negative pole of even number annular pump laser group I is drawn by L-type electrode II.Seal by O RunddichtringO between front end-plate 5, three even numbers annular pump laser groups, two odd number annular pump laser groups, end plate 6, inner formation laser pump cavity, cooling fluid 2 is injected in laser pump cavity, form diode-pumped nd yag laser gain module main body, diode-pumped nd yag laser gain module body top is provided with liquid injection port 13.Wherein, O RunddichtringO 10 is arranged between odd number annular pump laser group I 4 and even number annular pump laser group I 3, and U-shaped electrode 12 is arranged between odd number annular pump laser group II and even number annular pump laser group III.Semiconductor cooler 7 is arranged between diode-pumped nd yag laser gain module main body and base 8, be fixedly connected with diode-pumped nd yag laser gain module main body, base 8, the heat produced be delivered on base 8 in time dispel the heat during diode-pumped nd yag laser gain module body of work; Hygrosensor 9 is arranged on the side of the even number annular pump laser group II in diode-pumped nd yag laser gain module main body, monitoring modular temperature; Rod-shaped laser medium 1 is successively through front end-plate 5, even number annular pump laser group I 3, odd number annular pump laser group I 4, even number annular pump laser group II, odd number annular pump laser group II, even number annular pump laser group III, end plate 6, and the two ends of rod-shaped laser medium 1 are fixed on the end face of front end-plate 5, end plate 6 respectively by excellent sealed briquette I 11 and excellent sealed briquette II.
Fig. 3 is the odd number annular pump laser group structure cutaway view in diode-pumped nd yag laser gain module of the present invention, in Fig. 3, described odd number annular pump laser group I 4, comprises diode laser chip 14, secondary heat sink I 15, secondary heat sink II 25, insulating ceramic film 16, extraction electrode 17, organic glass observation window 19, ring-type inner polygon is heat sink 18.In the present embodiment, be provided with 11 diode laser chips, diode laser chip 14 is one of them.Be provided with 22 time heat sink, secondary heat sink I 15, secondary heat sink II 25 is wherein two.Be provided with 11 insulating ceramic films, insulating ceramic film 16 is one of them.Ring-type inner polygon is heat sink 18 limit number be set to ten on one side.Wherein secondary heat sink employing oxygenless copper material, diode laser chip 14 is arranged on secondary between heat sink I 15 and secondary heat sink II 25, becomes sandwich structure and weld with insulating ceramic film 16 to form " mountain " font time encapsulating structure; On 11 " mountain " font time encapsulation attachments are heat sink to hendecagon in ring-type, connect successively, the gold-plated process of hendecagon oxygen-free copper heat sink surface in ring-type; Two extraction electrodes are connected with first diode laser chip in ring and the 11 diode laser chip respectively draws.
Even number annular pump laser group in diode-pumped nd yag laser gain module described in the present embodiment is identical with odd number annular pump laser group basic structure.Difference be even number annular pump laser group ring in first diode laser chip extraction electrode be positive pole, in the ring of odd number annular pump laser group, first diode laser chip extraction electrode is negative pole.
The transmitance of the cooling fluid 2 pairs of near-infrared lasers described in the present embodiment is higher than 97%, and working temperature is-40 DEG C ~ 60 DEG C.
The oxygenless copper material that in ring-type described in the present embodiment, the heat sink employing of hendecagon is gold-plated is made.
The gold-plated oxygenless copper material of secondary heat sink employing described in the present embodiment is made.
Embodiment 2
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described diode-pumped nd yag laser module is made up of five odd number annular pump laser groups and five even number annular pump laser groups.The gold-plated BeO material of secondary heat sink employing is made.
Embodiment 3
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described semiconductor pumped laser module is made up of six odd number annular pump laser groups and six even number annular pump laser groups.The gold-plated WCu alloy material of secondary heat sink employing is made.
Embodiment 4
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described semiconductor pumped laser module is made up of three odd number annular pump laser groups and four even number annular pump laser groups.The gold-plated AlN material of secondary heat sink employing is made.
Embodiment 5
The present embodiment is identical with the basic structure of embodiment 1, and difference is, the limit number that described ring-type inner polygon is heat sink is 9 limits.The gold-plated MoCu alloy material of secondary heat sink employing is made.
Embodiment 6
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described ring-type inner polygon heat sink limit number is 7 limits.
Embodiment 7
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described ring-type inner polygon is heat sink Shuo Wei13 limit, limit.
Embodiment 8
The present embodiment is identical with the basic structure of embodiment 1, and difference is, described secondary heat sink material is the BeO material of high heat conductance.
Embodiment 9
The present embodiment is identical with the basic structure of embodiment 1, and difference is: described secondary heat sink material is the WCu alloy of high heat conductance.
The preparation method of a kind of diode-pumped nd yag laser gain module of the present invention comprises the steps:
A. between diode laser chips welding is time heat sink at two, then insulating ceramic film is welded on time heat sink bottom, makes " mountain " font time encapsulating structure;
B. " mountain " font welded time encapsulation is installed on each limit of ring-type inner polygon heat sink 18 successively, and in the bottom solder application of insulating ceramics, an extraction electrode is connected with first diode laser chip, another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
C. put into reflow soldering by heat sink for the polygon being connected to diode laser chip 18 and carry out disposable welding, form odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate 5, all even number annular pump laser groups of having welded, odd number annular pump laser group, end plate 6 are assembled by screw serial connection, rod-shaped laser medium 1 is successively through front end-plate 5, even number annular pump laser group, odd number annular pump laser group, end plate 6, and rod-shaped laser medium 1 two ends are separately fixed on the end face of front end-plate 5, end plate 6;
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. cooling fluid 2 is injected in optically focused cavity from the liquid injection port 13 of diode-pumped nd yag laser gain module body top, the liquid level of cooling fluid 2 is made to flood extraction electrode, seal liquid injection port 13 by polymethyl methacrylate window 19, form diode-pumped nd yag laser gain module main body;
H. semiconductor cooler 7 is arranged between diode-pumped nd yag laser gain module main body, base 8, and smears thermal grease conduction;
I. hygrosensor 9 is installed in one of them the annular pump laser array side in diode-pumped nd yag laser gain module main body, forms diode-pumped nd yag laser gain module.
Claims (6)
1. a preparation method for diode-pumped nd yag laser gain module, described gain module comprises rod-shaped laser medium, cooling fluid, multiple even number annular pump laser group, multiple odd number annular pump laser group, front end-plate, end plate, semiconductor cooler, base, hygrosensor, O RunddichtringO, excellent sealed briquette; Its annexation is, described front end-plate is fixedly connected with even number annular pump laser group, and even number annular pump laser group is alternately connected in series successively with odd number annular pump laser group, and is connected with end plate; By the sealing of O RunddichtringO between front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, inner formation laser pump cavity, is injected with cooling fluid in laser pump cavity, forms diode-pumped nd yag laser gain module main body; Semiconductor cooler is arranged between diode-pumped nd yag laser gain module main body and base, is fixedly connected with diode-pumped nd yag laser gain module main body, base; Hygrosensor is arranged on the side of an annular pump laser array in diode-pumped nd yag laser gain module main body; Rod-shaped laser medium is successively through front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, and the two ends of rod-shaped laser medium are fixed on respectively by excellent sealed briquette on the end face of front end-plate, end plate;
Described odd number annular pump laser group, comprise diode laser chip, secondary heat sink, insulating ceramic film, two extraction electrodes, ring-type inner polygon is heat sink, wherein diode laser chip be arranged on two time heat sink between, in sandwich structure, and weld with insulating ceramic film and form " mountain " font time encapsulating structure, on attachment of being contacted successively by multiple " mountain " font time encapsulating structure is heat sink to ring-type inner polygon, first diode laser chip in two extraction electrodes are heat sink with ring-type inner polygon respectively and the last diode laser chip are connected draws, in the ring of described odd number annular pump laser group, first diode laser chip extraction electrode is negative pole, described even number annular pump laser group is identical with the basic structure of odd number annular pump laser group, difference be the annular pump laser group of even number ring in first diode laser chip extraction electrode be positive pole,
Described preparation method comprises the steps:
A. between diode laser chips welding is time heat sink at two, then insulating ceramic film is welded on time heat sink bottom, makes " mountain " font time encapsulating structure;
B. " mountain " font welded time encapsulating structure is installed on the heat sink each limit of ring-type inner polygon successively, and in the bottom solder application of insulating ceramics, an extraction electrode is connected with first diode laser chip, another extraction electrode is connected with the last diode laser chip, and utilizes special fixture to fix;
C. put into reflow soldering carry out disposable welding by heat sink for the polygon being connected to diode laser chip, form odd number annular pump laser group;
D. even number annular pump laser group is identical with odd number annular pump laser group making step;
E. front end-plate, all even number annular pump laser groups of having welded, odd number annular pump laser group, end plate are assembled by screw serial connection, rod-shaped laser medium is successively through front end-plate, even number annular pump laser group, odd number annular pump laser group, end plate, and rod-shaped laser medium two ends are separately fixed on the end face of front end-plate, end plate;
F. the extraction electrode of even number annular pump laser group, odd number annular pump laser group is connected successively;
G. the liquid injection port of cooling fluid from diode-pumped nd yag laser gain module body top is injected in optically focused cavity, makes the liquid level of cooling fluid flood extraction electrode, by polymethyl methacrylate window sealing liquid injection port, form diode-pumped nd yag laser gain module main body;
H. semiconductor cooler is arranged between diode-pumped nd yag laser gain module main body, base, and smears thermal grease conduction;
I. hygrosensor is installed in one of them the annular pump laser array side in diode-pumped nd yag laser gain module main body, forms diode-pumped nd yag laser gain module.
2. the preparation method of diode-pumped nd yag laser gain module as claimed in claim 1, is characterized in that: described cooling fluid working temperature is-40 DEG C ~ 60 DEG C.
3. the preparation method of diode-pumped nd yag laser gain module as claimed in claim 1, is characterized in that: the oxygen-free copper that the described heat sink employing of ring-type inner polygon is gold-plated or other thermal conductivities are higher than 150k/Wm
-1k
-1high thermal conductivity material make.
4. the preparation method of diode-pumped nd yag laser gain module as claimed in claim 1, is characterized in that: the oxygen-free copper that described secondary heat sink employing is gold-plated or thermal conductivity are higher than 150k/Wm
-1k
-1beO, WCu alloy, AlN or MoCu alloy material make.
5. the preparation method of diode-pumped nd yag laser gain module as claimed in claim 1, is characterized in that: the quantity of described even number annular pump laser group is identical with the quantity of odd number annular pump laser group or differ one.
6. the preparation method of diode-pumped nd yag laser gain module as claimed in claim 1, is characterized in that: the limit number that described ring-type inner polygon is heat sink is the odd number on three ~ 15 limits.
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| CN103779782B (en) * | 2014-01-08 | 2016-07-06 | 中国工程物理研究院应用电子学研究所 | A kind of high-average power diode-pumped nd yag laser module and preparation method thereof |
| CN106300003B (en) * | 2016-11-07 | 2023-04-07 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser module packaging hardware |
| CN107946900B (en) * | 2017-12-29 | 2024-02-13 | 西安炬光科技股份有限公司 | Semiconductor laser module |
| CN112636137B (en) * | 2020-12-31 | 2022-07-29 | 中国空间技术研究院 | Snake-shaped micro-channel radiator for laser long-strip crystal |
| CN113488838A (en) * | 2021-07-29 | 2021-10-08 | 维林光电(苏州)有限公司 | Cooling packaging device for gain medium of optically pumped thin-film laser |
| CN114883895B (en) * | 2022-07-08 | 2022-11-08 | 中国工程物理研究院应用电子学研究所 | Ultra-compact light-weight composite cooling type immersion high-energy laser system |
| CN116799611B (en) * | 2023-08-28 | 2023-11-14 | 北京凯普林光电科技股份有限公司 | Side pump module and semiconductor laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674372A (en) * | 2005-04-21 | 2005-09-28 | 中国科学院上海光学精密机械研究所 | Polygonal high-power semiconductor laser laminated array module |
| CN101562309A (en) * | 2009-04-02 | 2009-10-21 | 北京国科世纪激光技术有限公司 | Laser gain module of semiconductor laser monotube combined side pumped solid-state laser |
| CN101593927A (en) * | 2009-06-30 | 2009-12-02 | 长春理工大学 | A kind of semiconductor side pumping module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5311528A (en) * | 1991-08-30 | 1994-05-10 | Hoya Corporation | Solid-state laser device capable of stably producing an output laser beam at high power |
| JP2004179412A (en) * | 2002-11-27 | 2004-06-24 | Nec Corp | Semiconductor laser excitation solid state laser device and its manufacturing method |
-
2012
- 2012-09-06 CN CN201210325578.5A patent/CN102820610B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1674372A (en) * | 2005-04-21 | 2005-09-28 | 中国科学院上海光学精密机械研究所 | Polygonal high-power semiconductor laser laminated array module |
| CN101562309A (en) * | 2009-04-02 | 2009-10-21 | 北京国科世纪激光技术有限公司 | Laser gain module of semiconductor laser monotube combined side pumped solid-state laser |
| CN101593927A (en) * | 2009-06-30 | 2009-12-02 | 长春理工大学 | A kind of semiconductor side pumping module |
Non-Patent Citations (1)
| Title |
|---|
| 环形激光二极管抽运棒状激光器中瞬态温度和热应力分析;欧群飞 等;《光学学报》;20040630;第24卷(第6期);803-807 * |
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