CN101378096A - Packaging structure for light emitting diode - Google Patents
Packaging structure for light emitting diode Download PDFInfo
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- CN101378096A CN101378096A CNA2007101424519A CN200710142451A CN101378096A CN 101378096 A CN101378096 A CN 101378096A CN A2007101424519 A CNA2007101424519 A CN A2007101424519A CN 200710142451 A CN200710142451 A CN 200710142451A CN 101378096 A CN101378096 A CN 101378096A
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Abstract
The invention discloses a packaging structure of a light emitting diode (LED), which comprises a first electrode, a second electrode and an LED chip. The LED chip is configured on the first electrode and electrically connected with the first electrode and the second electrode respectively, wherein, at least one of the first electrode and the second electrode is a heat pipe. As the heat pipe has better radiation effect, the whole packaging structure of the LED has better radiation effect, thus prolonging the service life thereof and improving the luminous efficiency thereof.
Description
Technical field
The present invention relates to a kind of package structure for LED, and be particularly related to a kind of package structure for LED that helps to promote the radiating effect of light-emitting diode chip for backlight unit.
Background technology
Light-emitting diode belongs to a kind of semiconductor subassembly, the material of its luminescence chip mainly uses III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN), its principle of luminosity is to convert electrical energy into light, just compound semiconductor is applied electric current, see through the compound of electronics and hole, the energy of surplus is disengaged with the form of light, and reach luminous effect.Because the luminescence phenomenon of light-emitting diode is not by adding thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property, thus the life-span of light-emitting diode reach more than 100,000 hours, and need not warm up the lamp time (idlingtime).In addition, light-emitting diode has reaction speed and (is about 10 soon
-9Second), volume is little, power-saving, pollute low (not containing mercury), high-reliability, be fit to advantages such as volume production, therefore its applicable field of institute is very extensive, for example needs the Dashboard illumination, traffic lights of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed and general lighting device etc.
Existing light-emitting diode is to be main material with gallium nitride (GaN), and is made by the mode of extension (epitaxy).Wherein, light-emitting diode mainly comprises substrate (substrate), semiconductor layer (semi-conductive layer), two external electrodes, and further comprises having two bond courses (confinement layer) that N type and P type mix respectively and be positioned at luminescent layer (active layer) between two bond courses in the semiconductor layer.When external electrode is applied forward bias, the electric current semiconductor layer of can flowing through, and in luminescent layer, produce the compound of electronics and hole, and then make luminescent layer luminous.
Light-emitting diode is to belong to a kind of high power assembly, and its power of 80% is the form output with heat energy, and remaining 20% power is only the form output with luminous energy.Therefore, if when not arranging in pairs or groups in the package structure for LED heat abstractor suitable, the heat energy of its generation will cause internal temperature to raise, and then influences the luminous efficiency of light-emitting diode component, and shortens its useful life.So the heat radiation of High Power LED is a problem that needs to be resolved hurrily in fact.
In No. 545702 patent of TaiWan, China patent, disclosed a kind of " light emitting diode (LED) radiating structure ", it comprises cathodic region and anode region and the light-emitting diode chip for backlight unit that is made by Heat Conduction Material (for example metal block material).Light-emitting diode chip for backlight unit is to be disposed on the cathodic region, and is connected with anode region electricity by lead.This radiator structure mainly is that the thermal energy conduction that is produced when utilizing the cathodic region that is positioned at the light-emitting diode chip for backlight unit below that light-emitting diode chip for backlight unit is worked is extremely extraneous.Yet because the radiating effect of metal block material is slower, comparatively speaking, its hot biography amount is less, and therefore, when being applied to the light-emitting diode chip for backlight unit of high wattage, its hot biography amount is obviously not enough, and can cause the problem of shortening in useful life and luminance shortage.
In addition, in No. 200428675 patent disclosure case of TaiWan, China, disclosed a kind of " light-emitting diode support structure improvement " with the effect of heat radiation optically focused, it utilizes high heat radiating metal bulk as the LED support main body, and utilize the machining mode to make support become the open tubular column structure, or make its structure with scarf, to increase area of dissipation.Though this mode helps to promote the heat conduction efficiency of light-emitting diode chip for backlight unit, yet the processing of this supporting structure is difficult for, and therefore, can cause cost of manufacture to increase, and meets just before problem that can't volume production.
Summary of the invention
The purpose of this invention is to provide a kind of package structure for LED, be suitable for solving the heat dissipation problem that existing light-emitting diode component suffers from, prolonging its useful life, and improve its luminous efficiency.
For reaching above-mentioned or other purpose, the present invention proposes a kind of package structure for LED, and it comprises first electrode, second electrode and light-emitting diode chip for backlight unit.First electrode and second electrode be electrical insulation each other.Light-emitting diode chip for backlight unit is disposed on first electrode, and is connected with first electrode and the second electrode electricity respectively, and wherein at least one is a heat pipe in first electrode and second electrode.
In one embodiment of the invention, the first above-mentioned electrode is a negative electrode, and second electrode is an anode.
In one embodiment of the invention, the first above-mentioned electrode has reflection recess, with ccontaining light-emitting diode chip for backlight unit.
In one embodiment of the invention, package structure for LED further comprises lead, and light-emitting diode chip for backlight unit is to see through lead to be connected with the second electrode electricity.
In one embodiment of the invention, package structure for LED further comprises lens, and these lens are to be disposed on first electrode and second electrode, and covering luminousing diode chip.
In one embodiment of the invention, package structure for LED further comprises the insulation adhesion layer, and this insulation adhesion layer is to be disposed between first electrode and second electrode.
In one embodiment of the invention, package structure for LED further comprises heat-radiating substrate, and the first above-mentioned electrode and second electrode are to be disposed at the heat-radiating substrate top.
In one embodiment of the invention, package structure for LED further comprises heat-conducting block, and this heat-conducting block is the below that is positioned at first electrode and second electrode, and is positioned at the top of heat-radiating substrate.
In one embodiment of the invention, heat pipe comprises loop hot-pipe, flat plate heat tube and the fluid liquid circulatory system.Further, this fluid liquid can be water, acetone, coolant, nano-fluid and liquid metal.
In one embodiment of the invention, the first above-mentioned electrode is a heat pipe.
In one embodiment of the invention, the second above-mentioned electrode is another heat pipe or metal block material.
In one embodiment of the invention, the second above-mentioned electrode is a heat pipe, and first electrode is a metal block material.
In one embodiment of the invention, the first above-mentioned electrode is a heat pipe, and second electrode is a metal tube, and second electrode is the periphery that is sheathed on first electrode.Further, this package structure for LED further comprises radiator, and this radiator is to be disposed at the end of the periphery of first electrode away from light-emitting diode chip for backlight unit.
Package structure for LED of the present invention consists predominantly of first electrode, second electrode and light-emitting diode, light-emitting diode chip for backlight unit is to be disposed on first electrode (being negative electrode), and be connected, and have at least in first electrode and second electrode one respectively with the second electrode electricity with first electrode for heat pipe.Because heat pipe has preferable radiating effect, therefore, can make whole package structure for LED have preferable radiating effect, prolonging its useful life, and improve its luminous efficiency.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A illustrates to according to looking schematic diagram on a kind of package structure for LED of the first embodiment of the present invention.
Figure 1B illustrates the generalized section of being painted for I-I ' hatching in the package structure for LED of Figure 1A.
Fig. 2 illustrates and is the generalized section according to a kind of package structure for LED of the second embodiment of the present invention.
Fig. 3 illustrates and is the generalized section according to a kind of package structure for LED of the third embodiment of the present invention.
Fig. 4 illustrates and is the generalized section according to a kind of package structure for LED of the fourth embodiment of the present invention.
Fig. 5 illustrates and is the generalized section according to a kind of package structure for LED of the fifth embodiment of the present invention.
Fig. 6 illustrates and is the generalized section according to a kind of package structure for LED of the sixth embodiment of the present invention.
Fig. 7 A illustrates to according to looking schematic diagram on a kind of package structure for LED of the seventh embodiment of the present invention.
Fig. 7 B illustrates the generalized section of being painted for II-II ' hatching in the package structure for LED of Fig. 7 A.
Fig. 8 A illustrates to existing with the emulation schematic diagram of metal block material as the cathodic region of light-emitting diode chip for backlight unit.
Fig. 8 B illustrate into the present invention with the simulation schematic diagram of heat pipe as first electrode of light-emitting diode chip for backlight unit.
Be respectively model with the package structure for LED shown in Fig. 8 A and the 8B shown in Fig. 9 A and the 9B and carry out metal block material and its temperature distribution history of vacuum cavity of gained after the Computer Simulation along gravity direction.
Description of reference numerals
100,100a, 100b, 100c, 100d, 100e, 100f: package structure for LED
110,110b, 110c, 110d, 110e, 110f: first electrode
112,112f: reflection recess 114: micro-structural
120,120a, 120b, 120c, 120d, 120e, 120f: second electrode
130: light-emitting diode chip for backlight unit 140,140c: adhesion layer
150: lead 160: heat-radiating substrate
170: lens 180: heat-conducting block
190: radiator 200: printed circuit board (PCB)
300: package structure for LED 310: light-emitting diode chip for backlight unit
320: metal block material 330: radiator
400: package structure for LED 410: light-emitting diode chip for backlight unit
420: vacuum cavity 430: radiator
Embodiment
First embodiment
Figure 1A illustrates to according to looking schematic diagram on a kind of package structure for LED of the first embodiment of the present invention.Figure 1B illustrates the generalized section of being painted for I-I ' hatching in the package structure for LED of Figure 1A.Please refer to Figure 1A and 1B, package structure for LED 100 of the present invention mainly comprises first electrode 110, second electrode 120 and at least one light-emitting diode chip for backlight unit 130.
The heat energy that is produced when making light-emitting diode chip for backlight unit 130 work can be got rid of rapidly, need have at least one to be heat pipe (Heat Pipe) in the first above-mentioned electrode 110 and second electrode 120, the heat energy that light-emitting diode chip for backlight unit 130 is produced is got rid of rapidly by heat pipe.In the prior art with high heat conductive metal bulk (for example: copper, aluminium) as anode region in the package structure for LED and cathodic region, because heat pipe has preferable capacity of heat transmission, therefore, the heat energy that is produced in the time of can helping light-emitting diode chip for backlight unit 130 work is got rid of rapidly, prolonging its useful life, and can promote its luminous efficiency.
Above-mentioned heat pipe can be traditional heat pipe, loop hot-pipe, flat plate heat tube and the fluid liquid circulatory system, and the present invention does not impose any restrictions for the form of heat pipe.In addition, the working fluid in the heat pipe can be the two phase flow of liquid (for example: methyl alcohol, acetone, water, coolant and liquid metal etc.), gas, liquid mist or is doped with the liquid etc. of nano particle.
In this embodiment, first electrode 110 is made up of the good heat pipe of radiating effect, and second electrode 120 is made up of high heat conductive metal bulk (for example: copper, aluminium), so, by the collocation of heat pipe and metal block material, to promote the radiating efficiency of package structure for LED 100.This first electrode 110 with heat pipe kenel can make its upper surface form reflection recess 112 via exterior design earlier, to reflect the light that light-emitting diode chip for backlight unit 130 is sent when making.In addition, on the internal face of heat pipe, optionally form micro-structural 114, to promote the capillary force that capillary structure was produced in the heat pipe.Since main actuating force that capillary force is the working fluid in the heat pipe when flowing, therefore, but the process of accelerating fluid circulation after capillary force increases, to promote the radiating efficiency of heat pipe further.The form of this micro-structural 114 can be sintering powder structure, network structure structure, the concave-convex surface structure that declines that declines that declines, or with above-mentioned several multi-form micro-structurals mix also use can, the present invention does not impose any restrictions for the form of micro-structural 114.
In addition, package structure for LED 100 can further comprise heat-radiating substrate 160, this heat-radiating substrate 160 is the belows that are arranged at first electrode 110 and second electrode 120, and it can be made up of thermal conductive metal plate or radiating subassembly, so that unnecessary heat energy is got rid of to extraneous.Moreover, on first electrode 110 and second electrode 120, lens 170 can be set, so, by light that light-emitting diode chip for backlight unit 130 sent can via the reflection of reflection recess 112 and lens 170 with refraction outgoing to the external world.
Second embodiment
Fig. 2 illustrates and is the generalized section according to a kind of package structure for LED of the second embodiment of the present invention.Please refer to Fig. 2, this package structure for LED 100a is identical with the package structure for LED 100 shown in Figure 1B haply, and the two difference is: the second electrode 120a among the package structure for LED 100a also is made up of heat pipe, so, can further promote its radiating efficiency.
The 3rd embodiment
Fig. 3 illustrates and is the generalized section according to a kind of package structure for LED of the third embodiment of the present invention.Please refer to Fig. 3, this package structure for LED 100b is identical with the package structure for LED 100a shown in Fig. 2 haply, and the two difference is: the first electrode 110b among the package structure for LED 100b is made up of high heat conductive metal bulk (for example: copper, aluminium), and the second electrode 120b is made up of heat pipe.
The 4th embodiment
Fig. 4 illustrates and is the generalized section according to a kind of package structure for LED of the fourth embodiment of the present invention.Please refer to Fig. 4, the package structure for LED 100 of this package structure for LED 100c and Figure 1B is slightly different, the first electrode 110c among the package structure for LED 100c is made up of the heat pipe of long strip type, and the second electrode 120c is made up of the metal block material of long strip type.Be together connected to each other between this first electrode 110c and the second electrode 120c by the adhesion layer 140c of insulation.In addition, below the first electrode 110c and the second electrode 120c and heat-radiating substrate 160 above to be provided with between heat-conducting block 180, the first electrode 110c, the second electrode 120c and heat-conducting block 180 threes be electrical insulation each other.The first electrode 110c and the second electrode 120c are fixed on the heat-conducting block 180, so, and the reason course of processing and separated from one another not between each assembly.Because other assembly among the package structure for LED 100c is roughly identical with the assembly shown in Figure 1B, so, no longer repeat at this.
The 5th embodiment
Fig. 5 illustrates and is the generalized section according to a kind of package structure for LED of the fifth embodiment of the present invention.Please refer to Fig. 5, this package structure for LED 100d is identical with the package structure for LED 100c shown in Fig. 4 haply, and the two difference is: the first electrode 110d among the package structure for LED 100d is made up of high heat conductive metal bulk (for example: copper, aluminium), and the second electrode 120d is made up of heat pipe.
The 6th embodiment
Fig. 6 illustrates and is the generalized section according to a kind of package structure for LED of the sixth embodiment of the present invention.Please refer to Fig. 6, this package structure for LED 100e is identical with the package structure for LED 100d shown in Fig. 5 haply, and the two difference is: the first electrode 110e and the second electrode 120e among the package structure for LED 100e all are made up of heat pipe, to promote its radiating efficiency further.
The 7th embodiment
Fig. 7 A illustrates to according to looking schematic diagram on a kind of package structure for LED of the seventh embodiment of the present invention.Fig. 7 B illustrates the generalized section of being painted for II-II ' hatching in the package structure for LED of Fig. 7 A.Please refer to Fig. 7 A and 7B, package structure for LED 100f of the present invention comprises the first electrode 110f, the second electrode 120f and light-emitting diode chip for backlight unit 130 equally.In this embodiment, the first electrode 110f is made up of the heat pipe of tubulose, and it can be traditional heat pipe, loop hot-pipe or flat plate heat tube equally.Light-emitting diode chip for backlight unit 130 is to be arranged among the reflection recess 112f of the first electrode 110f equally.The second electrode 120f is made of the metal tube with high-termal conductivity matter (for example: copper, aluminium), and this second electrode 120f is that the periphery that is sheathed on the first electrode 110f is adjacent to an end that disposes light-emitting diode chip for backlight unit 130.Because the first electrode 110f is made up of the heat pipe of tubulose, therefore, it can wear and be fixed on the printed circuit board (PCB) 200.In addition, the end in the periphery of the first electrode 110f away from light-emitting diode chip for backlight unit 130 more can be provided with radiator 190, further heat energy is got rid of to extraneous.
For proving that package structure for LED of the present invention has preferable radiating effect in fact, the inventor simulates the two the Temperature Distribution of first electrode of the cathode terminal of existing package structure for LED and package structure for LED of the present invention in the mode of Computer Simulation, with maximum temperature and the uniform temperature that calculates the two respectively, and then learn the quality of its radiating effect.
When carrying out Computer Simulation, be to carry out Computer Simulation with following two kinds of different situations.Fig. 8 A illustrates to existing with the emulation schematic diagram of metal block material as the cathodic region of light-emitting diode chip for backlight unit; Fig. 8 B illustrate into the present invention with the simulation schematic diagram of heat pipe as first electrode of light-emitting diode chip for backlight unit.Please refer to Fig. 8 A, existing package structure for LED 300 comprises light-emitting diode chip for backlight unit 310, metal block material 320 and the radiator 330 of 18 2W.These light-emitting diode chip for backlight unit 310 are the upper surfaces that are disposed at metal block material 320, and radiator 330 then is the lower surface that is disposed at metal block material 320.Next, please refer to Fig. 8 B, this package structure for LED 400 comprises light-emitting diode chip for backlight unit 410, vacuum cavity 420 and the radiator 430 of 18 2W.These light-emitting diode chip for backlight unit 410 are the upper surfaces that are disposed at heat pipe 420, and radiator 430 then is the lower surface that is disposed at heat pipe 420.This vacuum cavity 420 is in order to simulating first electrode in the package structure for LED of the present invention, and it includes micro-structural 422 and two-phase flow 424.Fig. 8 A has identical specification with light-emitting diode chip for backlight unit 310 and 410 among the 8B, and its radiator 330 also has identical specification with 430; In addition, its metal block material 320 has identical geometry external form with heat pipe 420.
Be respectively model with the package structure for LED shown in Fig. 8 A and the 8B shown in Fig. 9 A and the 9B and carry out metal block material and its temperature distribution history of vacuum cavity of gained after the Computer Simulation along long axis direction.By Fig. 9 A and 9B as can be known: it is bigger along the variations in temperature on the long axis direction for metal block material shown in Fig. 8 A 320, and the vacuum cavity 420 shown in Fig. 8 B it is less along the variations in temperature on the long axis direction.
By the result of aforementioned calculation machine emulation as can be known: compared to existing with the package structure for LED of metal block material as the cathodic region, real its vacuum cavity of package structure for LED of the present invention (being heat pipe) has lower maximum temperature and preferable uniform temperature, so, can make whole package structure for LED have preferable radiating effect.
In sum, package structure for LED of the present invention is to utilize first electrode or second electrode of heat pipe as light-emitting diode chip for backlight unit, or simultaneously with heat pipe as its first electrode and second electrode.Compared to tradition with the light emitting diode (LED) radiating structure of metal block material as the cathodic region and the anode region of light-emitting diode, because heat pipe has preferable radiating effect, therefore, can make whole package structure for LED have preferable radiating effect, prolonging its useful life, and improve its luminous efficiency.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is by being as the criterion that claim defined.
Claims (21)
1. package structure for LED comprises:
First electrode;
Second electrode, wherein this first electrode and this second electrode electrical insulation; And
Light-emitting diode chip for backlight unit is disposed on this first electrode, and is connected with this first electrode and this second electrode electricity respectively, and wherein at least one is a heat pipe in this first electrode and this second electrode.
2. package structure for LED as claimed in claim 1, wherein this first electrode is a negative electrode, and this second electrode is an anode.
3. package structure for LED as claimed in claim 1, wherein this first electrode has reflection recess, with ccontaining this light-emitting diode chip for backlight unit.
4. package structure for LED as claimed in claim 1 further comprises lead, and wherein this light-emitting diode chip for backlight unit is connected with this second electrode electricity through this lead.
5. package structure for LED as claimed in claim 1 further comprises lens, and wherein this lens configuration and covers this light-emitting diode chip for backlight unit on this first electrode and this second electrode.
6. package structure for LED as claimed in claim 1 further comprises the insulation adhesion layer, is disposed between this first electrode and this second electrode.
7. package structure for LED as claimed in claim 1 further comprises heat-radiating substrate, and wherein this first electrode and this second electrode are disposed at this heat-radiating substrate top.
8. package structure for LED as claimed in claim 7 further comprises heat-conducting block, and wherein this heat-conducting block is positioned at the below of this first electrode and this second electrode, and is positioned at the top of this heat-radiating substrate.
9. package structure for LED as claimed in claim 1, wherein this heat pipe comprises loop hot-pipe.
10. package structure for LED as claimed in claim 1, wherein this heat pipe comprises flat plate heat tube.
11. package structure for LED as claimed in claim 1, wherein this heat pipe comprises the fluid liquid circulatory system.
12. package structure for LED as claimed in claim 11, wherein the fluid liquid in this fluid liquid circulatory system is a water.
13. package structure for LED as claimed in claim 11, wherein the fluid liquid in this fluid liquid circulatory system is an acetone.
14. package structure for LED as claimed in claim 11, wherein the fluid liquid in this fluid liquid circulatory system is a coolant.
15. package structure for LED as claimed in claim 11, wherein the fluid liquid in this fluid liquid circulatory system is a nano-fluid.
16. package structure for LED as claimed in claim 11, wherein the fluid liquid in this fluid liquid circulatory system is a liquid metal.
17. package structure for LED as claimed in claim 1, wherein this first electrode is this heat pipe.
18. package structure for LED as claimed in claim 17, wherein this second electrode is another heat pipe or metal block material.
19. package structure for LED as claimed in claim 1, wherein this second electrode is this heat pipe, and this first electrode is a metal block material.
20. package structure for LED as claimed in claim 1, wherein this first electrode is this heat pipe, and this second electrode is a metal tube, and is sheathed on the periphery of this first electrode.
21. package structure for LED as claimed in claim 20 further comprises radiator, is disposed at the end of the periphery of this first electrode away from this light-emitting diode chip for backlight unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101424519A CN101378096A (en) | 2007-08-27 | 2007-08-27 | Packaging structure for light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101424519A CN101378096A (en) | 2007-08-27 | 2007-08-27 | Packaging structure for light emitting diode |
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| CN101378096A true CN101378096A (en) | 2009-03-04 |
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| CNA2007101424519A Pending CN101378096A (en) | 2007-08-27 | 2007-08-27 | Packaging structure for light emitting diode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937908A (en) * | 2010-09-29 | 2011-01-05 | 任立宏 | Heat pipe type high-power LED (Light Emitting Diode) module |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN104350616A (en) * | 2012-06-08 | 2015-02-11 | Lg伊诺特有限公司 | Light-emitting device, light-emitting device package, and light unit |
| TWI791342B (en) * | 2021-11-30 | 2023-02-01 | 財團法人工業技術研究院 | Heterogeneous integration semiconductor package structure |
-
2007
- 2007-08-27 CN CNA2007101424519A patent/CN101378096A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937908A (en) * | 2010-09-29 | 2011-01-05 | 任立宏 | Heat pipe type high-power LED (Light Emitting Diode) module |
| CN102738351A (en) * | 2011-04-02 | 2012-10-17 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN102738351B (en) * | 2011-04-02 | 2015-07-15 | 赛恩倍吉科技顾问（深圳）有限公司 | Light emitting diode (LED) packaging structure and manufacturing method thereof |
| CN104350616A (en) * | 2012-06-08 | 2015-02-11 | Lg伊诺特有限公司 | Light-emitting device, light-emitting device package, and light unit |
| US9419184B2 (en) | 2012-06-08 | 2016-08-16 | Lg Innotek Co., Ltd. | Light-emitting device, light-emitting device package, and light unit |
| CN104350616B (en) * | 2012-06-08 | 2017-12-01 | Lg 伊诺特有限公司 | Luminescent device, luminescent device packaging and light device |
| TWI791342B (en) * | 2021-11-30 | 2023-02-01 | 財團法人工業技術研究院 | Heterogeneous integration semiconductor package structure |
| US11942396B2 (en) | 2021-11-30 | 2024-03-26 | Industrial Technology Research Institute | Heterogeneous integration semiconductor package structure |
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Open date: 20090304 |