CN103633549B - A kind of method for packing of semiconductor laser array single chip - Google Patents
A kind of method for packing of semiconductor laser array single chip Download PDFInfo
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- CN103633549B CN103633549B CN201210313383.9A CN201210313383A CN103633549B CN 103633549 B CN103633549 B CN 103633549B CN 201210313383 A CN201210313383 A CN 201210313383A CN 103633549 B CN103633549 B CN 103633549B
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Abstract
The invention discloses a kind of method for packing of semiconductor laser array single chip, comprise the following steps: 1) aluminium nitride fin is cut by semiconductor laser bar size; 2) by heat sink to aluminium nitride fin and oxygen-free copper block welding in together with, by single-chip arrangement the cycle aluminium nitride fin is cut out electric insulation groove; 3) with mechanical clamp and aluminium oxide ceramics pad, aluminium nitride fin, solder and bar bar are pressed together, insert high-temperature soldering in high temperature reflux stove; 4) along electric insulation groove direction, bar bar is cut open with the section of High Rotation Speed, make the chip on bar bar become independently single-chip; 5) with wire bonder, one single-chip negative electrode is connected with adjacent single-chip anode gold thread, and the integrated negative electrode of chip one end and the anode of the other end is connected respectively on the electrode slice of heat sink piece of oxygen-free copper, in order to connecting external power source.Method for packing of the present invention, long service life, technique are simple, volume is little, good stability, power are high, are widely used.
Description
Technical field
The present invention relates to a kind of field of lasers, be specifically related to the method for packing that a kind of semiconductor laser bar repacks array single-chip into.
Background technology
Semiconductor laser has the many merits such as volume is little, lightweight, efficiency is high, is widely used in the various fields such as industry, military affairs, medical treatment, communication.Along with application is to laser power density, especially more and more higher to power density requirements after laser beam shaping, high-power semiconductor laser optical fiber coupling device occurs thereupon and develops rapidly.At present, semiconductor laser coupling fiber mainly adopts two kinds of technology paths to realize: be coupled into optical fiber after 1, the bar bar of noise spectra of semiconductor lasers standard 10mm carries out beam collimation, shaping; 2, optical fiber is coupled into after carrying out beam collimation, shaping after the arrangement of noise spectra of semiconductor lasers single-chip mechanical combination.Use bar bar to realize coupling fiber, have the advantages such as technique is simple, volume is little, but the useful life of bar bar is short, once bar bar goes wrong, semiconductor laser is just out of service.Multiple single-chip is used to realize coupling fiber, although complex process, but single-chip has longer useful life, even if one single chip is out of joint, also just overall output power slightly reduces, semiconductor laser still can continue to use, and its shortcoming is due to integrated artistic more complicated, needs the slicken solders such as the indium of use low-temperature melting point.
Because indium has the low and good plastic deformation ability of fusing point, effectively can reduce thermal stress, thus technique more easily realizes, and what the encapsulation of usual semiconductor laser all adopted is that indium solder or part adopt indium solder.But indium is very easily oxidized, and easily produce electromigration and electric heating migration problem under high currents, significantly reduce the reliability of semiconductor laser.In recent years, golden tin solder starts to replace indium solder gradually, the essential solder of the semiconductor laser optical fiber coupling device used under becoming high power, long-life, good stability and adverse circumstances.
In order to solve above-mentioned series of problems, and in conjunction with the advantage of above-mentioned two kinds of technology paths, the invention provides the method for packing that a kind of semiconductor laser bar repacks array single-chip into: first adopt bar bar welded encapsulation, repacked into Single-Chip Integration arrangement again, be equivalent to single-chip package integrated, thoroughly eliminate the participation of indium solder, also eliminate the machine error because semiconductor laser single-chip mechanical package brings, realize simple beam collimation, after shaping, just expeditiously laser coupled can be entered optical fiber.
Summary of the invention
The object of the invention is to the above problem overcoming prior art existence, a kind of method for packing of semiconductor laser array single chip is provided.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
The present invention will repack a kind of method for packing of semiconductor laser single-chip application arranged in parallel into after special for semiconductor laser bar welding, concrete encapsulation step is as follows:
1) the bar bar size of aluminium nitride fin according to semiconductor laser is cut;
2) together with being welded in heat sink to aluminium nitride fin and oxygen-free copper piece with solder, and according to the single-chip arrangement cycle on semiconductor laser bar, aluminium nitride fin is cut out electric insulation groove;
3) aluminium nitride fin, solder and semiconductor laser bar are pressed on together with the mechanical clamp of particular design and aluminium oxide ceramics pad, and are inserted in high temperature reflux stove and carry out high-temperature soldering, maximum temperature reaches 290 DEG C;
4) along the grooving direction between semiconductor laser bar chip, bar bar is cut open with the section of High Rotation Speed, make the chip clung on bar become independently single-chip;
5) with wire bonder, independently single-chip negative electrode is connected with the anode gold thread of adjacent single-chip, and the negative electrode of chip one end on integrated semiconductor laser bar arranged in parallel and the anode of the other end are connected respectively on the electrode slice of heat sink piece of oxygen-free copper, in order to being electrically connected external power source.
Further, solder that whole encapsulation process uses is golden tin hard solder, realizes welding without indium.
Further, described aluminium nitride fin is ceramic material, good heat dissipation effect.
Further, the surface gold-plating electric insulation of described aluminium nitride fin, fin thickness is 0.15mm, good insulating effect.
The invention has the beneficial effects as follows:
Semiconductor laser bar of the present invention repacks the method for packing of array single-chip into: first adopt bar bar welded encapsulation, then repacked into Single-Chip Integration arrangement, be equivalent to single-chip package integrated; Thoroughly eliminate the participation of indium solder, also eliminate the machine error because semiconductor laser single-chip mechanical package brings, realize simple beam collimation, after shaping, just expeditiously laser coupled can be entered optical fiber; Further, technique simple, long service life, use safety, environmental protection.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, coordinates accompanying drawing to be described in detail as follows below with preferred embodiment of the present invention.The specific embodiment of the present invention is provided in detail by following examples and accompanying drawing thereof.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the method for packing overall structure schematic diagram of semiconductor laser array single chip.
Number in the figure illustrates: 1, heat sink piece of oxygen-free copper, 2, aluminium nitride fin, 3, single-chip, 4, electric insulation groove, 5, electrode slice.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the present invention in detail.
With reference to shown in Fig. 1, a kind of method for packing of semiconductor laser array single chip, is characterized in that, comprises the following steps:
The bar bar size of aluminium nitride fin 2 according to semiconductor laser is cut by step 1), and as bar bar is of a size of 10 × 2mm2, aluminium nitride fin 2 is of a size of 12 × 4mm2;
Step 2) heat sink to aluminium nitride fin 2 and oxygen-free copper piece 1 is welded in solder together with, the longitudinal forward position of aluminium nitride fin 2 and oxygen-free copper heat sink piece of 1 forward position parallel alignment, the longitudinal direction of aluminium nitride fin 2 and lateral dimension are grown and width much larger than the chamber of semiconductor laser bar, arrange the cycle according to the single-chip 3 on semiconductor laser bar and aluminium nitride fin 2 is cut out electric insulation groove 4, the gold-plated surface electric insulation of aluminium nitride fin 2 is separated;
Aluminium nitride fin, solder and semiconductor laser bar are pressed on together by mechanical clamp and the aluminium oxide ceramics pad of step 3) particular design, and are inserted in high temperature reflux stove and carry out high-temperature soldering, and maximum temperature reaches 290 DEG C;
When step 4) is installed, semiconductor laser bar light-emitting area is alignd with aluminium nitride fin 2 forward position, makes the groove of chip chamber and the groove parallel alignment of aluminium nitride fin 2 of clinging to bar; Along the grooving direction between semiconductor laser bar chip, bar bar is cut open with the section of High Rotation Speed, make the chip clung on bar become independently single-chip 3;
Independently single-chip 3 negative electrode is connected with the anode gold thread of adjacent single-chip 3 by step 5) wire bonder, and the negative electrode of chip one end on integrated semiconductor laser bar arranged in parallel and the anode of the other end are connected respectively on the electrode slice 5 of oxygen-free copper heat sink piece 1, in order to being electrically connected external power source.
Further, solder that whole encapsulation process uses is golden tin hard solder, realizes welding without indium.
In addition, aluminium nitride fin 2 is ceramic material, good heat dissipation effect.
Further, the surface gold-plating electric insulation of aluminium nitride fin 2, fin thickness is 0.15mm, good insulating effect.
The operation principle of the present embodiment is as follows:
Semiconductor laser bar of the present invention repacks the method for packing of array single-chip into: first adopt bar bar welded encapsulation, then repacked into Single-Chip Integration arrangement, be equivalent to single-chip package integrated; Thoroughly eliminate the participation of indium solder, also eliminate the machine error because semiconductor laser single-chip mechanical package brings, realize simple beam collimation, after shaping, just can be fine by laser coupled golden light expeditiously; Further, technique simple, long service life, use safety, environmental protection.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a method for packing for semiconductor laser array single chip, is characterized in that, comprises the following steps:
The bar bar size of aluminium nitride fin (2) according to semiconductor laser is cut by step 1);
Step 2) heat sink piece of aluminium nitride fin (2) and oxygen-free copper (1) is welded in solder together with, and according to single-chip (3) the arrangement cycle on semiconductor laser bar, aluminium nitride fin (2) is cut out electric insulation groove (4);
Aluminium nitride fin, solder and semiconductor laser bar are pressed on together by step 3) mechanical clamp and aluminium oxide ceramics pad, and are inserted in high temperature reflux stove and carry out high-temperature soldering, and maximum temperature reaches 290 DEG C;
Bar bar is cut open along the grooving direction between semiconductor laser bar chip by the section of step 4) High Rotation Speed, makes the chip clung on bar become independently single-chip (3);
Independently single-chip (3) negative electrode is connected with the anode gold thread of adjacent single-chip (3) by step 5) wire bonder, and the negative electrode of chip one end on integrated semiconductor laser bar arranged in parallel and the anode of the other end are connected respectively on the electrode slice (5) of oxygen-free copper heat sink piece (1), in order to being electrically connected external power source.
2. the method for packing of semiconductor laser array single chip according to claim 1, is characterized in that: solder that whole encapsulation process uses is golden tin hard solder, realizes welding without indium.
3. the method for packing of semiconductor laser array single chip according to claim 1, is characterized in that: described aluminium nitride fin (2) is ceramic material.
4. the method for packing of semiconductor laser array single chip according to claim 1, is characterized in that: the surface gold-plating electric insulation of described aluminium nitride fin (2), fin thickness is 0.15mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210313383.9A CN103633549B (en) | 2012-08-30 | 2012-08-30 | A kind of method for packing of semiconductor laser array single chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210313383.9A CN103633549B (en) | 2012-08-30 | 2012-08-30 | A kind of method for packing of semiconductor laser array single chip |
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| CN103633549A CN103633549A (en) | 2014-03-12 |
| CN103633549B true CN103633549B (en) | 2016-01-20 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106877164A (en) * | 2017-01-12 | 2017-06-20 | 广东工业大学 | A kind of high-power semiconductor laser package module and method |
| CN106911074B (en) * | 2017-03-04 | 2019-02-12 | 海特光电有限责任公司 | A kind of semiconductor laser of achievable luminescence unit independent control |
| CN111211479A (en) * | 2018-11-21 | 2020-05-29 | 深圳市中光工业技术研究院 | Semiconductor laser chip and preparation method thereof |
| CN111211477B (en) * | 2018-11-21 | 2023-07-28 | 深圳市中光工业技术研究院 | Semiconductor laser and method for manufacturing the same |
| CN111326948B (en) * | 2018-12-15 | 2023-04-07 | 深圳市中光工业技术研究院 | Preparation method of laser chip |
| CN111082306B (en) * | 2019-11-13 | 2021-10-22 | 海南师范大学 | Semiconductor laser array and packaging method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201877674U (en) * | 2010-11-19 | 2011-06-22 | 无锡亮源激光技术有限公司 | Small-divergence packaging structure for solid laser pump modules |
| CN102593710A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Packaging method for semiconductor laser |
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| JPS60175476A (en) * | 1984-02-22 | 1985-09-09 | Toshiba Corp | Manufacture of integrated semiconductor device |
| US7864825B2 (en) * | 2006-08-10 | 2011-01-04 | Lasertel, Inc. | Method and system for a laser diode bar array assembly |
| CN201199606Y (en) * | 2008-01-30 | 2009-02-25 | 深圳世纪晶源光子技术有限公司 | Packaging structure of semiconductor laser |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201877674U (en) * | 2010-11-19 | 2011-06-22 | 无锡亮源激光技术有限公司 | Small-divergence packaging structure for solid laser pump modules |
| CN102593710A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Packaging method for semiconductor laser |
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Address after: 215163 No.2 workshop-1-102, No.2 workshop-2-203, zone a, industrial square, science and Technology City, No.189 Kunlunshan Road, high tech Zone, Suzhou City, Jiangsu Province Patentee after: Suzhou Changguang Huaxin Optoelectronic Technology Co.,Ltd. Address before: 215000 8 Jinfeng Road, science and Technology City, Suzhou high tech Zone, Jiangsu Patentee before: SUZHOU EVERBRIGHT PHOTONICS TECHNOLOGY Co.,Ltd. |
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