CN204290031U - A kind of high power semiconductor lasers encapsulating structure - Google Patents
A kind of high power semiconductor lasers encapsulating structure Download PDFInfo
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- CN204290031U CN204290031U CN201520018565.2U CN201520018565U CN204290031U CN 204290031 U CN204290031 U CN 204290031U CN 201520018565 U CN201520018565 U CN 201520018565U CN 204290031 U CN204290031 U CN 204290031U
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- sink
- semiconductor laser
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- heat
- diamond heat
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- Semiconductor Lasers (AREA)
Abstract
A kind of high power semiconductor lasers encapsulating structure, belongs to semiconductor laser field, for dispelling the heat to high power semiconductor lasers.The utility model adopts diamond heat-sink, lower diamond heat-sink and Thermoelectricity refrigerating apparatus noise spectra of semiconductor lasers and semiconductor laser bottom electrode to carry out internal heat dissipating in the enclosure, adopt porous aluminum fin unit and radiator fan to carry out external cooling in housing exterior, double radiation structure substantially increases radiating efficiency simultaneously.The utility model has the advantage that volume is little, structure is simple, easy to use, radiating efficiency is high, avoid the heat sink radiating effect of copper can not satisfactory and adopt aluminium nitride as heat sink complicated process of preparation, the shortcoming that cost is high, also overcome use recirculated cooling water even the heat abstractor bulky such as liquid nitrogen, complex structure, be difficult to realize the problem of modularization and miniaturization, be the upgraded product of prior art, have popularizing value widely.
Description
Technical field
The utility model relates to a kind of encapsulating structure of high power semiconductor lasers, belongs to semiconductor laser field.
Background technology
Through development for many years, the numerous areas that with features such as its volume are little, lightweight, voltage is low, power is large, semiconductor laser is widely used in that optical fiber communication, photoelectricity are integrated, optical disc storage, pump light source, atmospheric environment detect, the analysis of trace toxic gas and Molecular Spectroscopy etc. are closely bound up with human lives, certain applications wherein are constantly had higher requirement for the power output of semiconductor laser.Under normal circumstances, increase that the ridge of semiconductor laser is wide and to increase operating current be the most direct mode improving power output, but meanwhile also can cause the rising of semiconductor laser active area operationally temperature.Semiconductor laser temperature operationally has appreciable impact to its threshold current density, slope efficiency and spectrum stability etc., the overheated meeting in luminous zone causes the surface damage of chamber, luminous zone or even device degradation, finally cause component failure, therefore need effectively to dispel the heat.The effective means of usual raising semiconductor laser heat radiation mainly comprises the inverse bonding of use device, uses the material of high heat conductance as device isolation layer, the heat sink material etc. using buried heterostructure structure, use high heat conductance.In prior art, the main material such as copper or aluminium nitride that uses is as heat sink material, use copper lower as heat sink material cost, be applicable to extensive use, but its thermal conductivity still gap to some extent compared with some high thermal conducting material, and aluminium nitride is a kind of novel high thermal conducting material, coefficient of linear expansion is mated with semi-conducting material, but it is easily by aqueous solution etch, and the complicated process of preparation of aluminum-nitride single crystal, cost is high.In addition, under the condition of laboratory test platform, generally can also use recirculated cooling water even the householder method such as liquid nitrogen help laser heat radiation, and this heat abstractor often bulky, complex structure, be difficult to realize modularization and miniaturization.
Utility model content
Technical problem to be solved in the utility model is to provide the high power semiconductor lasers encapsulating structure that a kind of volume is little, structure is simple, easy to use, radiating efficiency is high.
The technical scheme solved the problems of the technologies described above is:
A kind of high power semiconductor lasers encapsulating structure, it comprises upper cover, shell, bracing frame, semiconductor laser, semiconductor laser bottom electrode, upper diamond heat-sink, Thermoelectricity refrigerating apparatus, lower diamond heat-sink, porous aluminum fin unit, radiator fan, shell is closed aluminum enclosure, and upper cover is installed on the top of shell, and bracing frame is installed, semiconductor laser in the bottom of shell, upper diamond heat-sink, Thermoelectricity refrigerating apparatus, lower diamond heat-sink is positioned at shell, upper diamond heat-sink is connected with lower surface with the upper surface of Thermoelectricity refrigerating apparatus respectively with lower diamond heat-sink, semiconductor laser and semiconductor laser bottom electrode are connected to the upper surface of diamond heat-sink, the lower surface of lower diamond heat-sink is connected to the inner side of shell bottom surface, porous aluminum fin unit is posted in the outside of shell bottom surface, radiator fan is fixed on below porous aluminum fin unit, shell side has the window relative with laser semiconductor launch hole, and window is provided with logical light microscopic sheet.
Above-mentioned high power semiconductor lasers encapsulating structure, described semiconductor laser and semiconductor laser bottom electrode by hot key and mode be welded to connect, pasted by heat-conducting glue between upper diamond heat-sink, Thermoelectricity refrigerating apparatus, lower diamond heat-sink, lower diamond heat-sink pastes the inner side of shell bottom surface by thermal paste.
Above-mentioned high power semiconductor lasers encapsulating structure, described shell there is composite power source interface, the supply lines of semiconductor laser, semiconductor laser bottom electrode, Thermoelectricity refrigerating apparatus is connected with composite power source interface respectively, the bottom surface of shell has fan power supply interface, and the power line of radiator fan is connected to composite power source interface by fan power supply interface.
The beneficial effects of the utility model are:
The utility model adopts diamond heat-sink, lower diamond heat-sink and Thermoelectricity refrigerating apparatus noise spectra of semiconductor lasers and semiconductor laser bottom electrode to carry out internal heat dissipating in the enclosure, adopt porous aluminum fin unit and radiator fan to carry out external cooling in housing exterior, double radiation structure substantially increases radiating efficiency simultaneously.The utility model has the advantage that volume is little, structure is simple, easy to use, radiating efficiency is high, avoid the heat sink radiating effect of copper can not satisfactory and adopt aluminium nitride as heat sink complicated process of preparation, the shortcoming that cost is high, also overcome use recirculated cooling water even the heat abstractor bulky such as liquid nitrogen, complex structure, be difficult to realize the problem of modularization and miniaturization, be the upgraded product of prior art, have popularizing value widely.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the end view of Fig. 1;
Fig. 3 is the vertical view of Fig. 1.
In figure, mark is as follows: upper cover 1, shell 2, logical light microscopic sheet 3, upper cover screw hole 4, bracing frame 5, semiconductor laser 6, semiconductor laser bottom electrode 7, upper diamond heat-sink 8, Thermoelectricity refrigerating apparatus 9, lower diamond heat-sink 10, porous aluminum fin unit 11, radiator fan 12, composite power source interface 13, fan power supply interface 14.
Embodiment
The utility model comprises upper cover 1, shell 2, bracing frame 5, semiconductor laser 6, semiconductor laser bottom electrode 7, upper diamond heat-sink 8, Thermoelectricity refrigerating apparatus 9, lower diamond heat-sink 10, porous aluminum fin unit 11, radiator fan 12.
Show in figure, shell 2 is the aluminum enclosure closed, upper cover 1 is installed by upper cover screw hole 4 in the top of shell 2, bracing frame 5 is installed in the bottom of shell 2, semiconductor laser 6, upper diamond heat-sink 8, Thermoelectricity refrigerating apparatus 9, lower diamond heat-sink 10 are arranged in shell 2, and porous aluminum fin unit 11 and radiator fan 12 are arranged on outside shell 2.The closed needs of shell 2 complete under pure drying nitrogen environment, to stop entering of steam.
Show in figure, semiconductor laser 6 and semiconductor laser bottom electrode 7 by hot key and mode be welded to connect, upper diamond heat-sink 8 and lower diamond heat-sink 10 are pasted onto upper surface and the lower surface of Thermoelectricity refrigerating apparatus 9 respectively by heat-conducting glue, semiconductor laser 6 and semiconductor laser bottom electrode 7 are connected to the upper surface of diamond heat-sink 8, and lower diamond heat-sink 10 pastes the inner side of shell 2 bottom surface by thermal paste.Upper diamond heat-sink 8, Thermoelectricity refrigerating apparatus 9, lower diamond heat-sink 10 noise spectra of semiconductor lasers 6 are dispelled the heat.
Show in figure, porous aluminum fin unit 11 is posted in the outside of shell 2 bottom surface, and radiator fan 12 is fixed on below porous aluminum fin unit 11.Porous aluminum fin unit 11 and radiator fan 12 pairs of shells 2 dispel the heat, dispelled the heat by the shell 2 bottom surface pair lower diamond heat-sink 10 be connected with shell 2 bottom surface and upper diamond heat-sink 8, Thermoelectricity refrigerating apparatus 9 simultaneously, play the effect of double-radiation function.
Show in figure, shell 2 side has the window relative with the Laser output face of semiconductor laser 6, and window is provided with logical light microscopic sheet 3, in order to derive the light sent by laser.
Show in figure, shell 2 there is composite power source interface 13, the supply lines of semiconductor laser 6, semiconductor laser bottom electrode 7, Thermoelectricity refrigerating apparatus 9 is connected with composite power source interface 13 respectively, the bottom surface of shell 2 has fan power supply interface 14, and the power line of radiator fan 12 is connected to composite power source interface 13 by fan power supply interface 14.
Claims (3)
1. a high power semiconductor lasers encapsulating structure, it is characterized in that: it comprises upper cover (1), shell (2), bracing frame (5), semiconductor laser (6), semiconductor laser bottom electrode (7), upper diamond heat-sink (8), Thermoelectricity refrigerating apparatus (9), lower diamond heat-sink (10), porous aluminum fin unit (11), radiator fan (12), shell (2) is the aluminum enclosure closed, upper cover (1) is installed on the top of shell (2), bracing frame (5) is installed in the bottom of shell (2), semiconductor laser (6), upper diamond heat-sink (8), Thermoelectricity refrigerating apparatus (9), lower diamond heat-sink (10) is positioned at shell (2), upper diamond heat-sink (8) is connected with lower surface with the upper surface of Thermoelectricity refrigerating apparatus (9) respectively with lower diamond heat-sink (10), semiconductor laser (6) and semiconductor laser bottom electrode (7) are connected to the upper surface of diamond heat-sink (8), the lower surface of lower diamond heat-sink (10) is connected to the inner side of shell (2) bottom surface, porous aluminum fin unit (11) is posted in the outside of shell (2) bottom surface, radiator fan (12) is fixed on porous aluminum fin unit (11) below, shell (2) side has the window relative with the laser emission port of semiconductor laser (6), window is provided with logical light microscopic sheet (3).
2. high power semiconductor lasers encapsulating structure according to claim 1, it is characterized in that: described semiconductor laser (6) and semiconductor laser bottom electrode (7) by hot key and mode be welded to connect, upper diamond heat-sink (8), Thermoelectricity refrigerating apparatus (9), lower diamond heat-sink are pasted by heat-conducting glue between (10), and lower diamond heat-sink (10) pastes the inner side of shell (2) bottom surface by thermal paste.
3. high power semiconductor lasers encapsulating structure according to claim 1 and 2, it is characterized in that: described shell (2) has composite power source interface (13), the supply lines of semiconductor laser (6), semiconductor laser bottom electrode (7), Thermoelectricity refrigerating apparatus (9) is connected with composite power source interface (13) respectively, the bottom surface of shell (2) has fan power supply interface (14), and the power line of radiator fan (12) is connected to composite power source interface (13) by fan power supply interface (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520018565.2U CN204290031U (en) | 2015-01-12 | 2015-01-12 | A kind of high power semiconductor lasers encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520018565.2U CN204290031U (en) | 2015-01-12 | 2015-01-12 | A kind of high power semiconductor lasers encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204290031U true CN204290031U (en) | 2015-04-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520018565.2U Expired - Fee Related CN204290031U (en) | 2015-01-12 | 2015-01-12 | A kind of high power semiconductor lasers encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204290031U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109404754A (en) * | 2018-10-27 | 2019-03-01 | 安徽省富鑫雅光电科技有限公司 | A kind of LED lamp with radiator |
| CN111971860A (en) * | 2018-04-11 | 2020-11-20 | 三菱电机株式会社 | Optical module |
| CN112397991A (en) * | 2020-10-22 | 2021-02-23 | 光华临港工程应用技术研发(上海)有限公司 | Packaging structure of semiconductor laser |
-
2015
- 2015-01-12 CN CN201520018565.2U patent/CN204290031U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111971860A (en) * | 2018-04-11 | 2020-11-20 | 三菱电机株式会社 | Optical module |
| CN111971860B (en) * | 2018-04-11 | 2022-02-15 | 三菱电机株式会社 | Optical module |
| CN109404754A (en) * | 2018-10-27 | 2019-03-01 | 安徽省富鑫雅光电科技有限公司 | A kind of LED lamp with radiator |
| CN112397991A (en) * | 2020-10-22 | 2021-02-23 | 光华临港工程应用技术研发(上海)有限公司 | Packaging structure of semiconductor laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20190112 |