CN1674372A - Polygonal large power semiconductor laser laminated array module - Google Patents
Polygonal large power semiconductor laser laminated array module Download PDFInfo
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- CN1674372A CN1674372A CN 200510025280 CN200510025280A CN1674372A CN 1674372 A CN1674372 A CN 1674372A CN 200510025280 CN200510025280 CN 200510025280 CN 200510025280 A CN200510025280 A CN 200510025280A CN 1674372 A CN1674372 A CN 1674372A
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- semiconductor laser
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Abstract
The present invention relates to a polygonal high-power semiconductor laser laminated array module. Its structure is as follows: in a polygonal cylinder body every side is a trapezoid-shaped semiconductor laser component with identifical structure and trapezoid-shaped strip block form, and the top surface of every strip block is directed inwards, and the contact electrode, sub-heat sink and heat sink strip blocks are successively tightly combined together from interior to exterior, the central portion of top surface of the described contact electrode is axially-arranged multi-strip high-power semiconductor laser line array, said several trapezoid-shaped semiconductor laser components are fixed on a water-cooling device, and the described contact electrode can be led out from the water-cooling device by means of connecting and insulating washer.
Description
Technical field
The present invention relates to semiconductor laser, particularly a kind of polygonal large power semiconductor laser laminated array module.
Background technology
Because high power semiconductor lasers has little, in light weight, the advantages such as conversion efficiency is high, low price of volume, it is in the all-solid state laser system in fields such as remote sensing, spectrum analysis, military affairs, aviation, space, be mainly used to the various solid laser mediums of pumping, also aspect laser medicine, obtained simultaneously using widely.
The pumping form of solid laser medium mainly contains the end pumping of circular rod, the profile pump of circular rod and the plane pumping of strip form etc. at present.During with the flash-lamp pump pumping solid laser, because pump light spectral line characteristic and active medium absorption characteristic are not exclusively mated, and the spectral bandwidth of photoflash lamp is wide more much bigger than the absorption band of laser crystal, most of pump energy can not be utilized by laser crystal, therefore the conversion efficiency of solid laser medium is low, and the electro-optical efficiency of photoflash lamp only is 0.1-5%.Replace the pumping source of photoflash lamp with semiconductor laser as solid laser medium, because the spectral line width of semiconductor laser is narrow, when the centre wavelength of semiconductor laser is positioned at the absorption band of solid laser medium, the conversion efficiency height of solid laser medium, thereby every performance of laser is improved greatly, and the pumping of diode-end-pumped replacement Gas lamp, the element of forming laser is solid state device, thereby has realized the form of full curing.But with semiconductor laser as pumping source, in the profile pump of circular rod, the rounded solid laser medium exists low to the large power semiconductor laser array pump light absorption efficiency of planar structure, absorb shortcomings such as inhomogeneous, its pumping efficiency is also very low, and the output beam quality of laser crystal medium is relatively poor; Be called for the ZL01220203.7 name in the patent of semiconductor laser array of semi-cylindrical shape light-emitting area in the patent No., exist the rounded solid dielectric rod that its pump light is absorbed uneven problem, in being called the patent of high-power semiconductor laser module of linear array structure for the ZL02110983.4 name, the patent No. has no cooling structure, the shortcoming that can not under high duty ratio, work, with several linear arrays be assembled to simultaneously semicircular heat sink on, if one semiconductor laser diode array damages, whole module will lose efficacy, and had increased its use cost; The output laser of semiconductor laser array may influence each other (when no solid laser medium is excellent) in the circular large power semiconductor laser array, the chamber face of semiconductor laser array pumping source is sustained damage, thereby reduce the life-span of pumping source.
Summary of the invention
The objective of the invention is to overcome the shortcoming in the above-mentioned existing pump technology; a kind of polygonal large power semiconductor laser laminated array module is provided; it can carry out efficient pumping to solid laser medium; have that pump light source is evenly distributed, the pumping efficiency height, the laser radiation of large power semiconductor laser array chamber face had advantages such as protective effect, have characteristics such as assembly simple in structure, with low cost, as to be easy to change composition module simultaneously again.
Technical scheme of the present invention is achieved in that
A kind of polygonal large power semiconductor laser laminated array module is characterised in that its formation is:
In a polygon cylindrical shell, each limit is the trapezoidal semiconductor laser elements of the identical trapezoidal strip and block of a structure, the end face of each trapezoidal stick inwardly, be that contact electrode, inferior heat sink and heat sink stick fit tightly together from the inside to the outside successively, middle body at the end face of described contact electrode is many high power semiconductor lasers linear arrays of axial horizontally-arranged, these a plurality of trapezoidal semiconductor laser elements are fixed on the water cooling plant, described contact electrode by connection electrode and insulation spacer by drawing on the water cooling plant.
Described trapezoidal semiconductor laser elements can be changed separately.
The present invention compared with prior art has following obvious advantage:
1, the present invention has been designed to polygonal structure to the plane pumping source of high power semiconductor lasers assembly, and this structure can make the solid laser medium rod obtain the uniform pumping of symmetry, improves pumping efficiency.
2, a plurality of trapezoidal semiconductor laser elements that separates among the present invention can be replaced arbitrarily, has avoided causing whole module to lose efficacy and difficult shortcoming of repairing by the inefficacy of a trapezoidal semiconductor laser elements.
3, the laser not direct projection mutually of high power semiconductor lasers linear array output among the present invention has avoided making owing to the laser direct projection shortcoming of its lost of life.
4, module of the present invention is made of the trapezoidal semiconductor laser elements of a plurality of planar structures, therefore has economy advantage easily.
Description of drawings
Fig. 1 is polygonal large power semiconductor laser laminated array module embodiment of the present invention---the structural representation of pentagon large power semiconductor laser laminated array module.
Fig. 2 is the trapezoidal semiconductor laser elements schematic diagram of the present invention.
Embodiment
Below in conjunction with drawings and Examples large power semiconductor laser laminated array module of the present invention is described further.
See also Fig. 1 and Fig. 2 earlier, as seen from the figure, polygonal large power semiconductor laser laminated array module of the present invention, its formation is:
In a pentagon cylindrical shell, each limit is the trapezoidal semiconductor laser elements of the identical trapezoidal strip and block of a structure, the end face of each trapezoidal stick inwardly, be that contact electrode 2, inferior heat sink 3 fits tightly with heat sink 4 sticks and is in the same place from the inside to the outside successively, described contact electrode 2 the item face middle body be many high power semiconductor lasers linear arrays 1 of axial horizontally-arranged, these a plurality of trapezoidal semiconductor laser elements are fixed on the water cooling plant 5, described contact electrode 2 by connection electrode 6 and insulation spacer 7 by drawing on the water cooling plant 5.
Described trapezoidal semiconductor laser elements can be changed separately.
During use, solid laser medium rod 8 is seated in the central authorities of polygonal large power semiconductor laser laminated array module by external member.
Operation principle of the present invention is as follows:
Join by two connection electrode 6 and extraneous power supply of high power semiconductor laser (not shown), apply voltage for many high power semiconductor lasers linear arrays 1 of connecting in the polygonal large power semiconductor laser array lamination module, make high power semiconductor lasers linear array 1 emitted laser carry out pumping solid laser medium rod 8.Recirculated water by constant temperature in the water cooling plant 5 is taken away the heat that polygonal large power semiconductor laser array lamination module produces, thereby plays the effect of refrigeration radiating, and this module can be worked under the high duty ratio condition.
The size that semiconductor laser elements among the present invention---is made of contact electrode 2, inferior heat sink 3, heat sink 4---can design according to the diameter of solid laser medium rod 8, and it is the above solid laser medium rod 8 of 4mm that this lamination module can be used for the pumping minimum diameter.
Polygonal large power semiconductor laser laminated array module, comprise by high power semiconductor lasers linear array 1, contact electrode 2, the inferior heat sink 3 and heat sink 4 trapezoidal semiconductor laser elements that constitute, as shown in Figure 2, water cooling plant 5, connection electrode 6, insulation spacer 7 and solid laser medium 8.The first step is with several characteristic (threshold currents, excitation wavelength, slope efficiency, power output) same or analogous high power semiconductor lasers linear array 1 chamber faces up, with the higher scolder of fusing point with its sintering insulation inferior heat sink 3 on (material can be AlN, Si, diamond or BeO), be generally tungsten copper with the solder insulation time heat sink metal that is sintered to that sintering is firm again, oxygen-free copper etc. have that the material of high heat conductance constitutes trapezoidal heat sink 4 on constitute trapezoidal semiconductor laser elements, this step sintering also can be earlier with the higher scolder of fusing point will insulate times heat sink 3 and metal trapezoidal heat sink 4 sintered together, and then with the solder high power semiconductor lasers linear array 1 that several characteristics are identical, contact electrode 2, inferior heat sink 3 and heat sink 4 sintering form trapezoidal semiconductor laser elements.Second step will be installed on the water cooling plant by certain direction successively through the same or analogous trapezoidal semiconductor laser elements of a plurality of characteristics of burn-in screen.The 3rd step drew the both positive and negative polarity of semiconductor laser laminated array module with two connection electrode 6 and three insulation spacers 7.To need to be installed in the center of large power semiconductor laser laminated array module at last by the solid laser medium rod 8 of pumping.Length according to solid laser medium can be installed a plurality of large power semiconductor laser laminated array modules along excellent length direction.
Embodiment 2:
(output peak power 〉=100W) is formed ten trapezoidal semiconductor laser elements (each assembly is made up of three high power semiconductor lasers linear arrays 1) by 30 high power semiconductor lasers linear arrays 1, ten trapezoidal semiconductor laser elements are cascaded successively and are fixed on the water cooling plant 5 with fixture, electric current is from one of them connection electrode 6 input, each high power semiconductor lasers linear array 1 of flowing through, again from another connection electrode 6 outputs, at the large power semiconductor laser laminated array module that constitutes two shared water cooling plants along solid laser medium rod direction, be that the solid laser medium rod of 6mm has carried out pumping to radius.Total output peak power 〉=3000W of two large power semiconductor laser laminated array modules.
Claims (2)
1, a kind of polygonal large power semiconductor laser laminated array module is characterised in that its formation is:
In a polygon cylindrical shell, each limit is the trapezoidal semiconductor laser elements of the identical trapezoidal strip and block of a structure, the end face of each trapezoidal stick inwardly, be contact electrode (2) from the inside to the outside successively, inferior heat sink (3) and heat sink (4) stick fits tightly together, middle body at the end face of described contact electrode (2) is many high power semiconductor lasers linear arrays (1) of axial horizontally-arranged, these a plurality of trapezoidal semiconductor laser elements are fixed on the water cooling plant (5), described contact electrode (2) by connection electrode (6) and insulation spacer (7) by drawing on the water cooling plant (5).
2, polygonal large power semiconductor laser laminated array module according to claim 1 is characterized in that described trapezoidal semiconductor laser elements can change separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025280 CN1674372A (en) | 2005-04-21 | 2005-04-21 | Polygonal large power semiconductor laser laminated array module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510025280 CN1674372A (en) | 2005-04-21 | 2005-04-21 | Polygonal large power semiconductor laser laminated array module |
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| CN1674372A true CN1674372A (en) | 2005-09-28 |
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| CN 200510025280 Pending CN1674372A (en) | 2005-04-21 | 2005-04-21 | Polygonal large power semiconductor laser laminated array module |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064473A (en) * | 2010-12-10 | 2011-05-18 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
| CN102447221A (en) * | 2010-09-30 | 2012-05-09 | 海特光电有限责任公司 | Series semiconductor laser |
| CN102820610A (en) * | 2012-09-06 | 2012-12-12 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN103779782A (en) * | 2014-01-08 | 2014-05-07 | 中国工程物理研究院应用电子学研究所 | High average power diode pumping laser module and preparation method thereof |
| CN105226485A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser radiating device |
| CN105226486A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cooling device |
| CN108199257A (en) * | 2017-12-25 | 2018-06-22 | 苏州长光华芯光电技术有限公司 | A kind of high-temperature solder conduction cooling laser diode annular folds battle array |
-
2005
- 2005-04-21 CN CN 200510025280 patent/CN1674372A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102447221A (en) * | 2010-09-30 | 2012-05-09 | 海特光电有限责任公司 | Series semiconductor laser |
| CN102064473A (en) * | 2010-12-10 | 2011-05-18 | 福州高意光学有限公司 | Visible light semiconductor laser capable of generating broadband output |
| CN102820610A (en) * | 2012-09-06 | 2012-12-12 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN102820610B (en) * | 2012-09-06 | 2015-02-11 | 中国工程物理研究院应用电子学研究所 | Diode pumping laser gain module and preparation method thereof |
| CN103779782A (en) * | 2014-01-08 | 2014-05-07 | 中国工程物理研究院应用电子学研究所 | High average power diode pumping laser module and preparation method thereof |
| CN103779782B (en) * | 2014-01-08 | 2016-07-06 | 中国工程物理研究院应用电子学研究所 | A kind of high-average power diode-pumped nd yag laser module and preparation method thereof |
| CN105226485A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser radiating device |
| CN105226486A (en) * | 2015-10-23 | 2016-01-06 | 惠州市杰普特电子技术有限公司 | Laser cooling device |
| CN105226485B (en) * | 2015-10-23 | 2019-03-29 | 惠州市杰普特电子技术有限公司 | Laser radiating device |
| CN108199257A (en) * | 2017-12-25 | 2018-06-22 | 苏州长光华芯光电技术有限公司 | A kind of high-temperature solder conduction cooling laser diode annular folds battle array |
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