CN102646923B - High-power water-cooling formula semiconductor laser - Google Patents

High-power water-cooling formula semiconductor laser Download PDF

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Publication number
CN102646923B
CN102646923B CN201210127090.1A CN201210127090A CN102646923B CN 102646923 B CN102646923 B CN 102646923B CN 201210127090 A CN201210127090 A CN 201210127090A CN 102646923 B CN102646923 B CN 102646923B
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water
laser
cooled
monomer
semiconductor laser
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CN102646923A (en
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李大明
张军
潘华东
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WUXI LUMISOURCE TECHNOLOGIES Co Ltd
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WUXI LUMISOURCE TECHNOLOGIES Co Ltd
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Abstract

The invention discloses a kind of high-power water-cooling formula semiconductor laser, it comprises the water-cooled base offering water-cooled runner, described water-cooled base is provided with the laser monomer of at least two, the downward extraction electrode copper sheet in both sides of described laser monomer, described electrode copper sheet is electrically connected monomer series-connected for each laser described with the circuit board be installed on bottom water-cooled base.Not only structure is simple, cost is low for above-mentioned high-power water-cooling formula semiconductor laser; And connected by circuit board between each laser monomer, circuit board and electrode copper sheet are compressed by hold-down screw, after a laser monomer breaks down, only need change this laser monomer, convenient maintenance and replacement, avoid waste to a certain extent, in manufacture and use procedure, there is stronger flexibility and replaceability.

Description

High-power water-cooling formula semiconductor laser
Technical field
The present invention relates to a kind of semiconductor laser, particularly relate to a kind of high-power water-cooling formula semiconductor laser.
Background technology
Semiconductor laser is a most important class laser in practicality.Its volume is little, the life-span is long, and the mode of simple Injection Current can be adopted to come its operating voltage of pumping and electric current and integrated circuit is compatible, thus can single-chip integration with it.And can directly carry out current-modulation to obtain the Laser output of High Speed Modulation by the frequency up to GHz.Due to these advantages, semiconductor diode laser is in laser communication, optical storage, optical circulator, laser printing, range finding and radar etc. and obtain a wide range of applications.
At present, high power semiconductor lasers is competitively chased by various countries with its wide application prospect and huge potential market, present high power semiconductor lasers is on the market integrate in aggregates by many watts of lasers substantially, survival rate is low, production cost is higher, and if after laser goes wrong, not easy-maintaining, even cause whole laser all to scrap, cause larger waste.
Summary of the invention
The object of the present invention is to provide a kind of high-power water-cooling formula semiconductor laser, it is by the monomer series-connected high power semiconductor lasers of multiple laser, and be designed with water-cooling system, there is the feature of structure is simple, cost is low and stronger flexibility and replaceability, to solve traditional high power semiconductor lasers Problems existing.
For reaching this object, the present invention by the following technical solutions:
A kind of high-power water-cooling formula semiconductor laser, it comprises the water-cooled base offering water-cooled runner, described water-cooled base is provided with the laser monomer of at least two, the downward extraction electrode copper sheet in both sides of described laser monomer, described electrode copper sheet is electrically connected monomer series-connected for each laser described with the circuit board be installed on bottom water-cooled base.
Especially, described laser monomer comprises is close to the heat sink of water-cooled base setting, described heat sink upper welding thermal conductive ceramic plate, the upper surface of described thermal conductive ceramic plate is welded with two fin, all groove is offered outside the end face of described two fin, welding electrode copper sheet in described groove, and between described two fin, be welded and fixed laser bar bar.
Especially, described water-cooled base is strip, comprise base plate and the side plate being arranged at base plate two ends, it is water-cooled body between biside plate, described water-cooled body offers water-cooled runner, and the upper surface of described water-cooled body is planar structure, described laser monomer is installed on water-cooled body by fixation kit.
Especially, described fixation kit comprises the projection that the corresponding outward extending spaced apart corresponding laser monomer number in water-cooled body both sides is arranged, gap is left between the lower surface of described projection and base plate, each projection is coordinated to be provided with Insulating frame, described Insulating frame is quadra, and one side is extended with step surface to side, described quadra is fastened on projection through a heat sink side, installs elastomeric element between the upper surface of described step surface and the bottom surface of projection.
Especially, the number that arranges of described laser monomer is 11, and power is 40W.
Especially, described elastomeric element is any one of helical spring or chip jump ring.
Especially, described heat sink be metal solid structure, in cross-shaped configuration.
Especially, the bottom of described water-cooled body offers several screwed holes, offers through hole corresponding on circuit board, through through hole, circuit board is installed on the bottom compression electrode copper sheet of water-cooled body by hold-down screw.
Especially, described Insulating frame is the metal solid structure of surface through anodized.
Beneficial effect of the present invention is, described high-power water-cooling formula semiconductor laser is compared with existing generic laser, and not only structure is simple, cost is low; And connected by circuit board between each laser monomer, circuit board and electrode copper sheet are compressed by hold-down screw, after a laser monomer breaks down, only need change this laser monomer, convenient maintenance and replacement, avoid waste to a certain extent, in manufacture and use procedure, there is stronger flexibility and replaceability.
Accompanying drawing explanation
Fig. 1 is the explosive view of the high-power water-cooling formula semiconductor laser that the specific embodiment of the invention 1 provides;
Fig. 2 is the explosive view of the laser monomer of the high-power water-cooling formula semiconductor laser that the specific embodiment of the invention 1 provides;
Fig. 3 is the profile of the high-power water-cooling formula semiconductor laser that the specific embodiment of the invention 1 provides;
Fig. 4 is the structural representation of the water-cooled base of the high-power water-cooling formula semiconductor laser that the specific embodiment of the invention 1 provides;
Fig. 5 is the structural representation of the Insulating frame of the high-power water-cooling formula semiconductor laser that the specific embodiment of the invention 1 provides.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.
Refer to shown in Fig. 1 to Fig. 5, in the present embodiment, a kind of high-power water-cooling formula semiconductor laser comprises water-cooled base 1, laser monomer 2, Insulating frame 4 and circuit board 3, described water-cooled base 1 is strip, comprise base plate 10 and the side plate 11 being arranged at base plate 10 two ends, it is water-cooled body 12 between biside plate 11, the center of described water-cooled body 12 offers water-cooled runner 13, two termination cooling water pipes of described water-cooled runner 13 and interior logical cooling water, the upper surface of described water-cooled body 12 is planar structure, its both sides correspondence is outward extended with 11 spaced apart projections 14, the number of the corresponding laser monomer 2 of described projection 14 is arranged, and leave gap between the lower surface of described projection 14 and base plate 10, for laser monomer 2 is fixed on water-cooled body 12.
It is 11 that described laser monomer 2 arranges number, each power is 40W, comprise and be close to heat sink 20 of the upper surface being welded in water-cooled body 12 by solder 5, described heat sink 20 is metal solid structure, in cross-shaped configuration, and weld thermal conductive ceramic plate 21 by solder 5 on described heat sink 20, the upper surface of described thermal conductive ceramic plate 21 is welded with two fin 22 by solder 5, groove 23 is all offered outside the end face of described two fin 22, welding electrode copper sheet 24 in described groove 23, and between described two fin 22, be welded and fixed laser bar bar 25.
Described circuit board 3 is offered several through holes 30, several screwed holes are offered in bottom corresponding to water-cooled base 1, circuit board 3 is installed on the bottom of water-cooled body 12 by hold-down screw 6 through through hole 30 and the both sides the compressing laser monomer 2 electrode copper sheet 24 of drawing downwards, to be together in series 11 laser monomers 2 by circuit board 3 high power laser of composition 400W, and the two ends of described circuit board 3 are welded with power supply lead wire 8.
Described Insulating frame 4 is mainly used in laser monomer 2 to be fixed on water-cooled body 12, it is surface has square hole 40 metal solid quadra through the centre of anodized, one side is extended with step surface 41 to side, described square hole 40 is fastened on projection 14 through a side of heat sink 20, between the upper surface of described step surface 41 and the bottom surface of projection 14, helical spring 7 is installed, be fixed on water-cooled body 12 by the elastic force of helical spring 7 by heat sink 20, thus whole laser monomer 2 is fixed on water-cooled body 12.
During work, circuit board 3 is powered to laser bar bar 25 by electrode copper sheet 24, the heat that during illumination, laser bar bar 25 produces passes to heat sink 20 by thermal conductive ceramic plate 21, heat sink 20 transfer heat to water-cooled body 12 again, carry out heat exchange implement to dispel the heat with the cooling water of water-cooled body 12 Inner eycle.
Connected by circuit board 3 between each laser monomer 2 of above-mentioned high-power water-cooling formula semiconductor laser, circuit board 3 and electrode copper sheet 24 are compressed by hold-down screw 6, after a laser monomer 2 breaks down, only need change this laser monomer 2, convenient maintenance and replacement, avoid waste to a certain extent, in manufacture and use procedure, there is stronger flexibility and replaceability.

Claims (7)

1. a high-power water-cooling formula semiconductor laser, it is characterized in that, comprise the water-cooled base offering water-cooled runner, described water-cooled base is provided with the laser monomer of at least two, the downward extraction electrode copper sheet in both sides of described laser monomer, described electrode copper sheet is electrically connected each laser monomer series-connected with the circuit board be installed on bottom water-cooled base, described water-cooled base is strip, comprise base plate and the side plate being arranged at base plate two ends, it is water-cooled body between biside plate, described water-cooled body offers water-cooled runner, and the upper surface of described water-cooled body is planar structure, described laser monomer is installed on water-cooled body by fixation kit, described fixation kit comprises the projection that the corresponding outward extending spaced apart corresponding laser monomer number in water-cooled body both sides is arranged, gap is left between the lower surface of described projection and base plate, each projection is coordinated to be provided with Insulating frame, described Insulating frame is quadra, and one side is extended with step surface to side, described quadra is fastened on projection through a heat sink side, between the upper surface of described step surface and the bottom surface of projection, elastomeric element is installed.
2. high-power water-cooling formula semiconductor laser according to claim 1, it is characterized in that, described laser monomer comprises is close to the heat sink of water-cooled base setting, described heat sink upper welding thermal conductive ceramic plate, the upper surface of described thermal conductive ceramic plate is welded with two fin, all offer groove outside the end face of described two fin, welding electrode copper sheet in described groove, and between described two fin, be welded and fixed laser bar bar.
3. high-power water-cooling formula semiconductor laser according to claim 1, is characterized in that, the number that arranges of described laser monomer is 11, and power is 40W.
4. high-power water-cooling formula semiconductor laser according to claim 1, is characterized in that, described elastomeric element is any one of coil spring or chip jump ring.
5. high-power water-cooling formula semiconductor laser according to claim 2, is characterized in that, described heat sink be metal solid structure, in cross-shaped configuration.
6. high-power water-cooling formula semiconductor laser according to claim 1, it is characterized in that, the bottom of described water-cooled body offers several screwed holes, offers through hole corresponding on circuit board, through through hole, circuit board is installed on the bottom compression electrode copper sheet of water-cooled body by hold-down screw.
7. high-power water-cooling formula semiconductor laser according to claim 1, is characterized in that, described Insulating frame is the metal solid structure of surface through anodized.
CN201210127090.1A 2012-04-26 2012-04-26 High-power water-cooling formula semiconductor laser Active CN102646923B (en)

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Publication number Priority date Publication date Assignee Title
CN104901147A (en) * 2015-06-18 2015-09-09 潍坊华光数码设备有限公司 UV laser refrigeration mechanism for CTP
DE102017216241A1 (en) * 2017-09-14 2019-03-14 Robert Bosch Gmbh Lidar arrangement with flow cooling

Citations (6)

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CN2896617Y (en) * 2006-05-09 2007-05-02 恩耐激光技术(上海)有限公司 High-power semiconductor laser
CN101164208A (en) * 2005-01-24 2008-04-16 昆特森斯光电技术公司 Very low cost surface emitting laser diode arrays
CN102025111A (en) * 2010-11-19 2011-04-20 无锡亮源激光技术有限公司 Small-divergence-angle solid laser pumping module encapsulating structure
CN201927886U (en) * 2010-06-11 2011-08-10 西安炬光科技有限公司 Horizontal array large-power semiconductor laser with substitutable chip
CN201956570U (en) * 2010-11-19 2011-08-31 无锡亮源激光技术有限公司 Semiconductor laser horizontal array for air cooled solid laser pump
CN202513441U (en) * 2012-04-26 2012-10-31 无锡亮源激光技术有限公司 High-power water-cooled semiconductor laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020172244A1 (en) * 2001-05-17 2002-11-21 Peng-Chih Li Self-separating laser diode assembly and method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101164208A (en) * 2005-01-24 2008-04-16 昆特森斯光电技术公司 Very low cost surface emitting laser diode arrays
CN2896617Y (en) * 2006-05-09 2007-05-02 恩耐激光技术(上海)有限公司 High-power semiconductor laser
CN201927886U (en) * 2010-06-11 2011-08-10 西安炬光科技有限公司 Horizontal array large-power semiconductor laser with substitutable chip
CN102025111A (en) * 2010-11-19 2011-04-20 无锡亮源激光技术有限公司 Small-divergence-angle solid laser pumping module encapsulating structure
CN201956570U (en) * 2010-11-19 2011-08-31 无锡亮源激光技术有限公司 Semiconductor laser horizontal array for air cooled solid laser pump
CN202513441U (en) * 2012-04-26 2012-10-31 无锡亮源激光技术有限公司 High-power water-cooled semiconductor laser

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