CN104283108A - High-power laser module and packaging method thereof - Google Patents
High-power laser module and packaging method thereof Download PDFInfo
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- CN104283108A CN104283108A CN201310291835.2A CN201310291835A CN104283108A CN 104283108 A CN104283108 A CN 104283108A CN 201310291835 A CN201310291835 A CN 201310291835A CN 104283108 A CN104283108 A CN 104283108A
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Abstract
The invention relates to a high-power laser module which comprises a heat sink. A plurality of laser single-tube chip units connected in series are arranged on the surface of the heat sink and one side of the light emitting end. The laser single-tube chip units connected in series are arranged on one side of the light emitting end of the heat sink in a circular arc or circular arc internally-tangent polyline mode. Due to the fact that high-power laser single tubes are connected in series, the high-power module is replaceable, and the heat effect caused by dense bars is avoided; the arc face design replaces a slow-axis compression lens, and therefore the laser power consumption is reduced.
Description
Technical field
The present invention relates to a kind of high power laser module and method for packing thereof, belong to the technical field of semiconductor laser encapsulation.
Background technology
Because semiconductor laser volume is little, quality is light, photoelectric conversion efficiency is high, long service life, be easy to the advantages such as adjustment, make its application in fields such as industry, medical treatment, communication, information displaying and military affairs widely.The R & D Level of high-power semiconductor laser have impact on the development level such as science and techniques of defence, industry, and its application can mainly act on the aspect such as the guidance of guided missile and tracking, weapon are simulated and bomb is ignited, night vision radar monitoring.The application of powerful bar bar laser can also act on Industrial Metal cutting and engraving, Metal Melting coating are reprocessed.At medical field, laser beautifying is more and more subject to the favor of people.
Semiconductor laser is the device of the stimulated emission laser be prepared into semi-conducting material, its operation principle: by certain energisation mode, can be with between (conduction band and valence band) at semiconductor substance, or semiconductor substance can be with between impurity (acceptor or alms giver) energy level, realize the population inversion of non equilibrium carrier, when being in a large amount of electronics and the hole-recombination of population inversion state, just produce stimulated emission effect.
The performance of laser is except outside the Pass having with chip, and also with the heat radiation of laser with encapsulate relevant, in order to improve the reliability and stability of laser, reduce production cost, it is necessary for designing efficient radiator structure.Require that the simple cost of encapsulating structure Design and manufacture is low in addition, radiating efficiency is high.
At present, the commercially produced product of high power semiconductor lasers also exists defect, as heat-sinking capability is poor, especially with the encapsulation of the high-power bar strips of Conduction cooled, more heat is had at Gao Zhongying MODE of operation, these heats are only by Conduction cooled, and conducting path is longer, are easy to cause the active area used heat in chip to be concentrated, thus cause thermal change uneven, with there is red shift, spectrum widening in the wavelength of laser, reliability stability can decline.For another example, replaceability is poor, for the high power semiconductor lasers of Conduction cooled type, with one-shot forming and bar bar encapsulation in the majority, but once occur that burning etc. of single-shot luminous point is abnormal, whole laser module there will be the danger of global failure, and not replaceable.Unspoiled chip is wasted thereupon, causes high cost allowance.And one-time formed laser module cannot realize the aging of single-chip, therefore cost of manufacture is high.
Therefore need a kind of method for packing, the high power laser module utilizing the method to encapsulate out, can solve the heat dissipation problem of Conduction cooled high power semiconductor lasers light, and replaceable operation and the single-chip that can reach again chip failing test aging object.
Chinese patent literature CN101834402A discloses " a kind of semiconductor laser side pump module ", semiconductor laser side pump module has been mentioned in this contrast patent, module adopts the encapsulation of single bar bar, it is advantageous that and introduce a set of optical system, the requirement meeting pumping source is expanded by slow axis, thus the side pump module of DOPA bar is instead of with single bar bar, effectively reduce production cost.But in this contrast patent and the replaceability of unresolved chip and hot stack problem.
Chinese patent literature CN2762400 open a kind of " side pumping module for arch semiconductor laser ", this contrast patent adopts the concentric arch arrangement of side pumping, wherein semiconductor laser linear array adopts arch form encapsulating structure, and array chip arranges along the axis direction of rod-shaped laser medium and is arranged in equably on the periphery of arch.It is advantageous that and improve pumping efficiency and power, the Laser output of macro-energy, high light beam quality can be obtained.But the domes of this patent do not refer to the domes of the slow-axis direction of the bright dipping of chip, but at a kind of distributed architecture of quick shaft direction, being still of its slow-axis direction employing is parallel to rod-shaped laser medium bar bar, it changes the mode being around rod-shaped laser medium, and fails to solve hot stack problem and the replaceability operation of chip.
Chinese patent literature CN102074890A discloses " a kind of encapsulation method for die series laser ", the high power laser method for packing mentioned in this contrast patent, have employed multiple single tube horizontal arrangement, avoid the thermal effect problem that the close-packed arrays between bar bar single tube brings, and single tube chip is by being welded on the method for transition heat sink, solve multiple luminous point and encapsulate the inconsistent of the light emission direction of formation separately, what meet its three primary colors as laser display technology goes out light consistency.But in this contrast patent, single tube chip adopts one-shot forming encapsulation, and its encapsulation still has non-exchange defect.
Chinese patent literature CN102931585A discloses " a kind of exocoel closes bundle semiconductor laser optical fiber coupling module ", this patent is the technical field of coupling fiber, the multichannel light beam that multiple single-tube semiconductor laser sends incides on diffraction grating through different angle, hot spot overlaps on the diffraction grating, by under point light action of diffraction grating and the feedback effect of external cavity mirror, the light beam that every single-tube semiconductor laser sends realizes external cavity feedback and wavelength locking in the resonant cavity be made up of rear facet and the external cavity mirror of laser, and by diffraction grating, multichannel light beam synthesized a branch of thus realize exocoel conjunction bundle, multimode fiber is coupled into finally by focus lamp.This patent advantage is, by being overlapped in grating by many different wave lengths light beam a bit thus bundle is closed in the space achieving exocoel, to achieve the fine core diameter of fiber coupling module, high-power, high light beam quality Laser output.And the present invention is directed to high power semi-conductor method for packing, proposing single tube series connection replaces the bar bar of dense arrangement thus efficiently solves hot stack problem; By unit independent test aging and change achieve chip replaceability operation, improve product reliability; Achieved the slow axis compression of the hot spot of non-lens by heat sink design cambered surface, thus improve operating efficiency, wherein to converge the hot spot being not limited to multi-chip overlapping for hot spot, and arc is heat sink is not limited to circular arc, can adopt as the structure such as trapezoidal.
In sum, in the method for the encapsulation that existing contrast patent documentation is mentioned, the heat dissipation problem of chip obtains enough attention, but chip replaceability also needs to optimize, and the high power laser module in field is repaired for laser beautifying and Industrial Metal, the convergence effect of hot spot is realized often through optical lens.And one-time formed packaging technology relative requirement is higher, cost is also high.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of high power laser module.
The present invention also provides a kind of method for packing of above-mentioned high power laser module.The high power laser module that the present invention utilizes the method to encapsulate effectively can solve the hot stack problem between chip, can provide again a kind of and replaces optical lens and realize the packing forms of slow axis compression effectiveness.This method for packing coordinates sintering fixture can realize the scale batch production of high power laser module; and the test achieving single-chip aging and achieve chip replaceability operation; thus substantially increase reliability and the useful life of module, reduce production cost.
Technical scheme of the present invention is as follows:
A kind of high power laser module, comprise heat sink, be provided with the laser single die blade unit of multiple series connection in bright dipping end side on described heat sink surface, the laser single die blade unit of described multiple series connection is circular arc arrangement or the arrangement of circular arc inscribe multi-section-line in heat sink bright dipping end side.Wherein circular arc or circular arc inscribe multi-section-line provide different arc radius according to the model of prepared high power laser and the needs of power, in order to reach the object of high-power bar bar, the hot spot that the laser single die blade unit of described multiple series connection produces is being adjustable as coincidence away from heat sink objective plane, is also adjustable as and does not overlap.
Preferred according to the present invention, be provided with the cylindrical lens of fast axial compression contracting at the bright dipping end of described laser single die blade unit, realize adjusting at the hot spot of quick shaft direction the bright dipping of described laser single die blade unit by fast axial compression contracting.
Preferred according to the present invention, described laser single die blade unit is fixedly connected with by the first solder with heat sink; Described laser single die blade unit comprises metallized ceramic substrate, on described metallized ceramic substrate, is provided with insulation tank and laser single tube chip, described laser single tube chip is fixedly connected with by the second solder with described metallized ceramic substrate, and the fusing point of described first solder is lower than the second solder melt point.
Preferred according to the present invention, described heat sink light output end is circular arc, and the shape and size of described circular arc light output end adapt with the described multiple laser single die blade units of connecting arranged in circular arc: the laser single die blade unit of described multiple series connection arranges along described circular arc light output end.
Preferred according to the present invention, described heat sink light output end is that circular arc inscribe multistage is linear, and the shape and size of described light output end adapt with the described multiple laser single die blade units of connecting arranged in circular arc inscribe multi-section-line: the laser single die blade unit of described multiple series connection arranges along the linear light output end of described circular arc inscribe multistage.
Preferred according to the present invention, be provided with the cell location groove installing laser single die blade unit on described heat sink surface and in bright dipping end side, the size of described cell location groove and the size of described laser single die blade unit adapt.Wherein said cell location groove inner surface requires higher evenness, and utilizes the first solder to be mounted in described cell location groove by described laser single die blade unit.
Preferred according to the present invention, be also provided with PCB on described heat sink surface, the laser single die blade unit of described series connection is electrically connected with described PCB.
Preferred according to the present invention, the laser single die blade unit being positioned at heat sink surface two ends is electrically connected with described PCB respectively.
Preferred according to the present invention, the surface of described PCB is also provided with 2 pieces of metal levels, the laser single die blade unit being positioned at heat sink surface two ends is welded on 2 pieces of metal levels respectively, and described 2 pieces of metal level other ends connect work electrode line, form series loop.
Preferred according to the present invention, described metallized ceramic substrate surface insulation is divided into two pieces of regions by described insulation tank: one piece of region is provided with laser single tube chip wherein, and described laser single tube chip is connected with the laser single die blade unit be disposed adjacent with another block region by wire.
Preferred according to the present invention, the insulation tank on described metallized ceramic substrate, it is axially consistent with the light direction of laser single tube chip.
A method for packing for high power laser module, the method adopts sintering fixture to encapsulate described high power laser single tube chip, and it is as follows that the method comprising the steps of:
(1) P of described laser single tube chip is faced down, utilize the second solder by concordant with the leading edge of metallized ceramic substrate for the exiting surface of described laser single tube chip and weld, be packaged into laser single die blade unit; Laser single tube chip and insulation tank opposite side, with insulation tank, are formed loop by bonding wire by metallized ceramic substrate; Independently cylindrical lens is adopted to realize fast axial compression contracting at the bright dipping end of laser single die blade unit; The advantage herein designed is to achieve the independent test of laser single die blade unit and aging, and can realize substituting operation; Described metallized ceramic substrate is transition heat sink, and its material is AlN, and the coefficient of heat conduction is closer to the old primer of chip, better at the hot matching effect that copper is heat sink than direct paster;
(2) utilize the first solder that above-mentioned laser single die blade unit is arranged on the bright dipping end side of heat sink upper surface, the laser single die blade unit of described multiple series connection is circular arc arrangement or the arrangement of circular arc inscribe multi-section-line in heat sink bright dipping end side, heat sinkly act as Conduction cooled.The present invention, by described laser single die blade unit series connection arrangement or arrangement of circular arc inscribe multi-section-line in circular arc, achieves slow axis compression, instead of the slow axis compression that optical lens realizes, thus decrease the power consumption penalty introduced lens and bring.
Preferred according to the present invention, before described step (1), conventionally laser single tube chip is arranged on the side of the insulation tank of metallized ceramic substrate; The one side of described metallized ceramic substrate is provided with patterned metal layer, and the pattern of described patterned metal layer is with insulation tank.
Preferred according to the present invention, in step (1), utilize sintering fixture described laser single tube chip and described metallized ceramic substrate closely to be welded together by the second solder along the direction perpendicular to metallized ceramic substrate.
Preferred according to the present invention, in step (2), the metallized ceramic substrate another side being packaged with laser single tube chip is provided with metal pattern layer, is connected together by the cell location slot welding of described metal pattern layer by described laser single die blade unit and heat sink surface.
Preferred according to the present invention, described heat sink be metal heat sink.
Preferred according to the present invention, described heat sink be that oxygen-free copper is heat sink, and surface gold-plating.But be of the present inventionly heat sinkly not limited to oxygen-free copper material.Compared with the tungsten copper heat-sink structure that routine avoids thermal stress to take, finished product is cheaper.
The invention has the advantages that:
1. present invention employs independently single tube chip package, instead of the packing forms of whole bar bar, effectively avoid the hot stack problem that the forms such as chip close-packed arrays are brought.
2. present invention employs the structure of single-chip individual packages, can realize single-chip independently tests with aging, thus reduce cost, improve the stability and reliability of product, and chips welding is different with the solder that junior unit welding adopts, the solder melt point that the solder melt point that junior unit welding adopts adopts lower than chips welding, thus realize the replaceability operation when module single-chip goes wrong.
3. the present invention only adopts cylindrical lens to carry out fast axial compression contracting in the emitting cavity face of chip junior unit, adopts heat sink particular design to realize slow axis compression, instead of optical lens, thus avoid the power loss that repeatedly lens cause at slow-axis direction.
4. present invention employs the form of transition heat sink, effectively solve the chip thermal stress issues at bonding process because coefficient of thermal expansion different brought heat sink with copper.
Accompanying drawing explanation
Fig. 1 is the heat sink structural representation of the present invention;
Fig. 2 is packaged with laser single tube chip, and the laser single die blade unit schematic diagram of fixing cylindrical lens;
Fig. 3 is the overall structure schematic diagram being fixed with PCB and laser single tube chip;
The structural representation that Fig. 4,5 to be heat sink light output ends of the present invention be circular arc inscribe multistage is linear;
In Fig. 1-5,1, heat sink; 2, cell location groove; 3, module fixed hole position; 4, heat sink circular arc light output end; 5, metallized ceramic substrate; 6, insulation tank; 7, the cylindrical lens of fast axial compression contracting; 8, laser single tube chip; 9, PCB; 10, metal level; 11, the linear light output end of circular arc inscribe multistage.
Embodiment
Below in conjunction with Figure of description and embodiment, the present invention is described in detail, but is not limited thereto.
Embodiment 1,
As Figure 1-3.
A kind of high power laser module, comprises heat sink 1, and be provided with the laser single die blade unit of multiple series connection in bright dipping end side on the described surface of heat sink 1, the laser single die blade unit of described multiple series connection be that circular arc arranges in heat sink bright dipping end side.
Be provided with the cylindrical lens 7 of fast axial compression contracting at the bright dipping end of described laser single die blade unit, realize adjusting at the hot spot of quick shaft direction the bright dipping of described laser single die blade unit by fast axial compression contracting.
Described laser single die blade unit is fixedly connected with by the first solder with heat sink 1; Described laser single die blade unit comprises metallized ceramic substrate 5, on described metallized ceramic substrate 5, is provided with insulation tank 6 and laser single tube chip 8, described laser single tube chip 8 is fixedly connected with by the second solder with described metallized ceramic substrate 5, and the fusing point of described first solder is lower than the second solder melt point.
The described light output end of heat sink 14 is circular arc, and the shape and size of described circular arc light output end 4 adapt with the described multiple laser single die blade units of connecting arranged in circular arc: the laser single die blade unit of described multiple series connection arranges along described circular arc light output end 4.
Also be provided with PCB 9 on the described surface of heat sink 1, the laser single die blade unit of described series connection is electrically connected with described PCB 9.The surface of described PCB 9 is also provided with 2 pieces of metal levels 10, and the laser single die blade unit being positioned at heat sink 1 surperficial two ends is welded on 2 pieces of metal levels 10 respectively, and described 2 pieces of metal level 10 other ends connect work electrode line, form series loop.
Described metallized ceramic substrate 5 surface insulation is divided into two pieces of regions by described insulation tank 6: one piece of region is provided with laser single tube chip 8 wherein, and described laser single tube chip 8 is connected with the laser single die blade unit be disposed adjacent with another block region by wire.
Insulation tank 6 on described metallized ceramic substrate 5, it is axially consistent with the light direction of laser single tube chip 8.
Embodiment 2,
A kind of high power laser module as described in Example 1, its difference is, be provided with the cell location groove 2 installing laser single die blade unit on the described surface of heat sink 1 and in bright dipping end side, the size of described cell location groove 2 and the size of described laser single die blade unit adapt.
Embodiment 3,
As shown in Figure 4,5.
A kind of high power laser module as described in Example 1, its difference is, the laser single die blade unit of described multiple series connection is the arrangement of circular arc inscribe multi-section-line in heat sink bright dipping end side.
Described heat sink light output end is that circular arc inscribe multistage is linear, and the shape and size of described light output end adapt with the described multiple laser single die blade units of connecting arranged in circular arc inscribe multi-section-line: the laser single die blade unit of described multiple series connection arranges along the linear light output end of described circular arc inscribe multistage.
Embodiment 4,
A method for packing for high power laser module as described in embodiment 1-2, the method adopts sintering fixture to encapsulate described high power laser single tube chip, and it is as follows that the method comprising the steps of:
(1) P of described laser single tube chip 8 is faced down, utilize the second solder that the exiting surface of described laser single tube chip 8 is concordant with the leading edge of metallized ceramic substrate 5 and weld, be packaged into laser single die blade unit; Laser single tube chip 8 and insulation tank 6 opposite side, with insulation tank 6, are formed loop by bonding wire by metallized ceramic substrate 5; Independently cylindrical lens 7 is adopted to realize fast axial compression contracting at the bright dipping end of laser single die blade unit;
(2) utilize the first solder that above-mentioned laser single die blade unit is arranged on the bright dipping end side of heat sink 1 upper surface, the laser single die blade unit of described multiple series connection is circular arc arrangement in the bright dipping end side of heat sink 1, and heat sink 1 act as Conduction cooled.
Before described step (1), conventionally laser single tube chip is arranged on the side of the insulation tank of metallized ceramic substrate; The one side of described metallized ceramic substrate is provided with patterned metal layer, and the pattern of described patterned metal layer is with insulation tank.
In step (1), sintering fixture is utilized described laser single tube chip and described metallized ceramic substrate closely to be welded together by the second solder along the direction perpendicular to metallized ceramic substrate.
In step (2), the metallized ceramic substrate another side being packaged with laser single tube chip is provided with metal pattern layer, is connected together by the cell location slot welding of described metal pattern layer by described laser single die blade unit and heat sink surface.
Described heat sink be that oxygen-free copper is heat sink, and surface gold-plating.
Embodiment 5,
A method for packing for high power laser module as described in Example 4, its difference is:
Step (2) utilizes the first solder that above-mentioned laser single die blade unit is arranged on the bright dipping end side of heat sink 1 upper surface, the laser single die blade unit of described multiple series connection is the arrangement of circular arc inscribe multi-section-line in the bright dipping end side of heat sink 1, heat sinkly act as Conduction cooled.
Claims (10)
1. a high power laser module, it is characterized in that, this high power laser module comprises heat sink, be provided with the laser single die blade unit of multiple series connection in bright dipping end side on described heat sink surface, the laser single die blade unit of described multiple series connection is circular arc arrangement or the arrangement of circular arc inscribe multi-section-line in heat sink bright dipping end side.
2. a kind of high power laser module according to claim 1, it is characterized in that, be provided with the cylindrical lens of fast axial compression contracting at the bright dipping end of described laser single die blade unit, realize adjusting at the hot spot of quick shaft direction the bright dipping of described laser single die blade unit by fast axial compression contracting.
3. a kind of high power laser module according to claim 1, it is characterized in that, described laser single die blade unit is fixedly connected with by the first solder with heat sink; Described laser single die blade unit comprises metallized ceramic substrate, on described metallized ceramic substrate, is provided with insulation tank and laser single tube chip, described laser single tube chip is fixedly connected with by the second solder with described metallized ceramic substrate, and the fusing point of described first solder is lower than the second solder melt point; Insulation tank on described metallized ceramic substrate, it is axially consistent with the light direction of laser single tube chip.
4. a kind of high power laser module according to claim 1, it is characterized in that, described heat sink light output end is circular arc, and the shape and size of described circular arc light output end adapt with the described multiple laser single die blade units of connecting arranged in circular arc: the laser single die blade unit of described multiple series connection arranges along described circular arc light output end.
5. a kind of high power laser module according to claim 1, it is characterized in that, described heat sink light output end is that circular arc inscribe multistage is linear, and the shape and size of described light output end adapt with the described multiple laser single die blade units of connecting arranged in circular arc inscribe multi-section-line: the laser single die blade unit of described multiple series connection arranges along the linear light output end of described circular arc inscribe multistage.
6. a kind of high power laser module according to claim 1, it is characterized in that, be provided with the cell location groove installing laser single die blade unit on described heat sink surface and in bright dipping end side, the size of described cell location groove and the size of described laser single die blade unit adapt.
7. a kind of high power laser module according to claim 1, it is characterized in that, be also provided with PCB on described heat sink surface, the laser single die blade unit of described series connection is electrically connected with described PCB; The laser single die blade unit being positioned at heat sink surface two ends is electrically connected with described PCB respectively; The surface of described PCB is also provided with 2 pieces of metal levels, and the laser single die blade unit being positioned at heat sink surface two ends is welded on 2 pieces of metal levels respectively, and described 2 pieces of metal level other ends connect work electrode line, form series loop.
8. a kind of high power laser module according to claim 3, it is characterized in that, described metallized ceramic substrate surface insulation is divided into two pieces of regions by described insulation tank: one piece of region is provided with laser single tube chip wherein, and described laser single tube chip is connected with the laser single die blade unit be disposed adjacent with another block region by wire.
9. the method for packing of high power laser module as described in claim 1-8, the method adopts sintering fixture to encapsulate described high power laser single tube chip, and it is characterized in that, it is as follows that the method comprising the steps of:
(1) P of described laser single tube chip is faced down, utilize the second solder by concordant with the leading edge of metallized ceramic substrate for the exiting surface of described laser single tube chip and weld, be packaged into laser single die blade unit; Laser single tube chip and insulation tank opposite side, with insulation tank, are formed loop by bonding wire by metallized ceramic substrate; Independently cylindrical lens is adopted to realize fast axial compression contracting at the bright dipping end of laser single die blade unit;
(2) utilize the first solder that above-mentioned laser single die blade unit is arranged on the bright dipping end side of heat sink upper surface, the laser single die blade unit of described multiple series connection is circular arc arrangement or the arrangement of circular arc inscribe multi-section-line in heat sink bright dipping end side, heat sinkly act as Conduction cooled.
10. the method for packing of high power laser module according to claim 9, is characterized in that, before described step (1), conventionally laser single tube chip is arranged on the side of the insulation tank of metallized ceramic substrate; The one side of described metallized ceramic substrate is provided with patterned metal layer, and the pattern of described patterned metal layer is with insulation tank;
In step (1), sintering fixture is utilized described laser single tube chip and described metallized ceramic substrate closely to be welded together by the second solder along the direction perpendicular to metallized ceramic substrate;
In step (2), the metallized ceramic substrate another side being packaged with laser single tube chip is provided with metal pattern layer, is connected together by the cell location slot welding of described metal pattern layer by described laser single die blade unit and heat sink surface; Described heat sink be that oxygen-free copper is heat sink, and surface gold-plating.
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| CN104868363A (en) * | 2015-05-28 | 2015-08-26 | 北京工业大学 | Single-tube semiconductor laser and fiber coupling system |
| CN105720478A (en) * | 2016-04-26 | 2016-06-29 | 西安炬光科技股份有限公司 | Conductive cooling type semiconductor laser with replaceable chip and preparation method thereof |
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| CN106911074A (en) * | 2017-03-04 | 2017-06-30 | 海特光电有限责任公司 | A kind of semiconductor laser of achievable luminescence unit independent control |
| CN107706734A (en) * | 2017-10-13 | 2018-02-16 | 中国电子科技集团公司第十三研究所 | A kind of dense arrangement pulse laser |
| CN110474688A (en) * | 2019-08-16 | 2019-11-19 | 武汉光迅信息技术有限公司 | A kind of optical module |
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| CN106374333B (en) * | 2016-11-07 | 2019-01-15 | 中国工程物理研究院应用电子学研究所 | A kind of diode-pumped nd yag laser module encapsulation method |
| CN106911074A (en) * | 2017-03-04 | 2017-06-30 | 海特光电有限责任公司 | A kind of semiconductor laser of achievable luminescence unit independent control |
| CN107706734A (en) * | 2017-10-13 | 2018-02-16 | 中国电子科技集团公司第十三研究所 | A kind of dense arrangement pulse laser |
| CN110474688A (en) * | 2019-08-16 | 2019-11-19 | 武汉光迅信息技术有限公司 | A kind of optical module |
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