CN204067849U - A kind of novel semiconductor laser case package structure - Google Patents
A kind of novel semiconductor laser case package structure Download PDFInfo
- Publication number
- CN204067849U CN204067849U CN201420333300.7U CN201420333300U CN204067849U CN 204067849 U CN204067849 U CN 204067849U CN 201420333300 U CN201420333300 U CN 201420333300U CN 204067849 U CN204067849 U CN 204067849U
- Authority
- CN
- China
- Prior art keywords
- base
- shell
- semiconductor laser
- welded
- package structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000003466 welding Methods 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims description 18
- 238000007493 shaping process Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 3
- 238000005219 brazing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model relates to a kind of novel semiconductor laser case package structure, comprises base, shell; It is characterized in that: base is provided with the identical step of difference in height, make chip directly be welded on base; Be provided with rectangular groove at submounts, and shell bottom surface is provided with a step, and the step of shell is welded in the rectangular recess of base.Semiconductor laser case package structure of the present utility model, base is separated with shell, directly can carry out beam shaping on base, carry out the welding of shell after beam shaping completes again.Compare with traditional capsulation structure for semiconductor laser, this encapsulating structure has the advantages such as thermal diffusivity is good, reliability is high, be conveniently coupled, processing request is low.
Description
Technical field
The utility model relates to a kind of encapsulating structure of novel semiconductor laser shell, and this structure is separated with base by shell, has the advantages such as thermal diffusivity is good, reliability is high, be conveniently coupled, processing request is low.
Technical background
Semiconductor laser, owing to having the many merits such as volume is little, lightweight, efficiency is high, is widely used in the various fields such as industry, military affairs, medical treatment, communication.Due to the restriction of self quantum well waveguiding structure, the output beam quality of semiconductor laser and CO
2the conventional laser such as laser, solid YAG laser are compared poor, hinder the expansion of its application.In recent years, along with the development of epitaxial growth of semiconductor material growing technology, semiconductor laser waveguiding structure optimisation technique, passivating cavity surface technology, high stability encapsulation technology, high efficiency and heat radiation technology, particularly in the demand of direct semiconductor Laser industry processed and applied and high power fiber laser pumping source, promote that there is semiconductor laser develop rapidly that is high-power, high light beam quality.
At present, the packaging technology of the semiconductor laser of most of multi-chip is all the form adopting shell and base one, and cos system is welded on the copper sheet of step, after carrying out beam shaping, then is welded on base by copper sheet.This form packaging technology, the welding of shell and base uses brazing metal to weld together, and under this high temperature, base and shell are easy to distortion; Secondly, during the laser works that this packaging technology makes, the heat that cos system sends will arrive copper coin through solder, then could arrive base through one deck solder, and radiating rate is slower.
Summary of the invention
The utility model is in order to overcome practical problem and the shortcoming of the existence of above-mentioned prior art, a kind of encapsulating structure of novel semiconductor laser shell is provided, this encapsulating structure adopts the packing forms that is separated with base of shell, effectively can improve the technologic distortion of conventional package and the slow problem of radiating rate.
The utility model is achieved through the following technical solutions.
A novel semiconductor laser case package structure, comprises base, shell; It is characterized in that: base is provided with the identical step of difference in height, make chip directly be welded on base; Be provided with rectangular groove at submounts, and shell bottom surface is provided with a step, and the step of shell is welded in the rectangular recess of base.
Described base is provided with the identical step of difference in height, and cos system is directly welded on each step of base by solder.
The bottom of shell is provided with step, and the part that tube wall is thinner is welded into the rectangular recess in base, and shell step plays location and blocks the effect of weld seam.
The fusing point that shell welds the solder used lower than the fusing point of the solder of welding cos, will can not make the solder fusing of welding cos when welding shell.
This semiconductor laser case package form, base is separated with shell, directly can carry out beam shaping on base, carry out the welding of shell after beam shaping completes again.
The utility model contrast prior art has following innovative point:
The utility model proposes a kind of encapsulating structure of novel semiconductor laser shell, compare with conventional package form, there is the advantages such as semiconductor chip thermal diffusivity is good, reliability is high, be conveniently coupled, processing request is low.
Accompanying drawing explanation
Fig. 1 a is the front view of the utility model base;
Fig. 1 b is the A-A profile of Fig. 1 a;
Fig. 2 a is the front view of the utility model shell;
Fig. 2 b is the A-A profile of Fig. 2 a;
Fig. 3 is structural representation of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Can find out in Fig. 1 a, Fig. 1 b, Fig. 3, be provided with rectangular groove at submounts, base 1 is provided with the identical step of multiple difference in height, and cos system is directly welded on the step of base 1 by solder, just can directly be coupled on base 1.Traditional handicraft is that base and shell link together, and cos system will be welded on the copper sheet of step, after Lens Coupling completes, then is welded on base by copper sheet.Encapsulating structure of the present utility model, the heat that cos system is distributed directly can be passed on base by solder, and the heat that traditional handicraft cos system is distributed by after solder, could will arrive on base after also will passing through one deck copper coin and one deck solder.By contrast.Encapsulating structure of the present utility model makes cos system radiating better, and laser stability and reliability all improve a lot.
Can find out in Fig. 2 a, Fig. 2 b, Fig. 3, the bottom of shell 2 is provided with step, and the part that tube wall is thinner is welded in the rectangular recess in base 1, and shell 2 step plays location and blocks the effect of weld seam.
As shown in Figure 3, the utility model comprises base 1, shell 2; On base 1, be provided with rectangular groove, and base is provided with the identical step of difference in height; Shell 2 bottom surface is provided with a step, and the step of shell 2 is welded in the rectangular recess of base 1.Base 1 and shell 2 use solder to weld together, and the solder melt point used when welding shell lower than the fusing point of solder during welding cos system, will can not make the solder fusing of welding cos system.The whole groove of fill solder base 1 during welding, the sealing after welding is better.
Claims (3)
1. a novel semiconductor laser case package structure, comprises base, shell; It is characterized in that: base is provided with the identical step of difference in height, make chip directly be welded on base; Be provided with rectangular groove at submounts, and shell bottom surface is provided with a step, and the step of shell is welded in the rectangular recess of base.
2. a kind of novel semiconductor laser case package structure according to claim 1, is characterized in that: described base is provided with the identical step of difference in height, and cos system is directly welded on each step of base by solder.
3. a kind of novel semiconductor laser case package structure according to claim 1, is characterized in that: the fusing point of welding shell solder will lower than the fusing point of welding cos system solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420333300.7U CN204067849U (en) | 2014-06-20 | 2014-06-20 | A kind of novel semiconductor laser case package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420333300.7U CN204067849U (en) | 2014-06-20 | 2014-06-20 | A kind of novel semiconductor laser case package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204067849U true CN204067849U (en) | 2014-12-31 |
Family
ID=52209297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420333300.7U Expired - Lifetime CN204067849U (en) | 2014-06-20 | 2014-06-20 | A kind of novel semiconductor laser case package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204067849U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161485A (en) * | 2015-07-28 | 2015-12-16 | 昆明物理研究所 | Integrated packaging shell and semiconductor thermostat and preparation method thereof |
| CN112186497A (en) * | 2020-10-14 | 2021-01-05 | 高意通讯（深圳）有限公司 | Semiconductor laser and packaging method |
| CN113097858A (en) * | 2021-06-10 | 2021-07-09 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser with locally thinned bottom plate |
| CN117638632A (en) * | 2024-01-26 | 2024-03-01 | 深圳市星汉激光科技股份有限公司 | Laser housing, laser and manufacturing method of laser housing |
-
2014
- 2014-06-20 CN CN201420333300.7U patent/CN204067849U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161485A (en) * | 2015-07-28 | 2015-12-16 | 昆明物理研究所 | Integrated packaging shell and semiconductor thermostat and preparation method thereof |
| CN105161485B (en) * | 2015-07-28 | 2017-12-26 | 昆明物理研究所 | Integrative packaging shell and semiconductor thermostat and preparation method thereof |
| CN112186497A (en) * | 2020-10-14 | 2021-01-05 | 高意通讯（深圳）有限公司 | Semiconductor laser and packaging method |
| CN113097858A (en) * | 2021-06-10 | 2021-07-09 | 深圳市星汉激光科技股份有限公司 | Semiconductor laser with locally thinned bottom plate |
| CN117638632A (en) * | 2024-01-26 | 2024-03-01 | 深圳市星汉激光科技股份有限公司 | Laser housing, laser and manufacturing method of laser housing |
| CN117638632B (en) * | 2024-01-26 | 2024-05-28 | 深圳市星汉激光科技股份有限公司 | Laser housing, laser and manufacturing method of laser housing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP03 | Change of name, title or address |
Address after: 430074 East Lake science and technology zone, Wuhan province high tech Avenue, No. 999, the future of science and technology city of the city of Hubei Patentee after: WUHAN RAYCUS FIBER LASER TECHNOLOGIES Co.,Ltd. Address before: 430223 East Lake New Technology Development Zone, Huazhong University of Science and Technology, Wuhan science and technology park innovation base, building No. 10, building No. Patentee before: WUHAN RAYCUS FIBER LASER TECHNOLOGIES Co.,Ltd. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20141231 |
|
| CX01 | Expiry of patent term |