CN103474551A - High-power light-emitting diode (LED) substrate and packaging method thereof - Google Patents
High-power light-emitting diode (LED) substrate and packaging method thereof Download PDFInfo
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- CN103474551A CN103474551A CN2013103675381A CN201310367538A CN103474551A CN 103474551 A CN103474551 A CN 103474551A CN 2013103675381 A CN2013103675381 A CN 2013103675381A CN 201310367538 A CN201310367538 A CN 201310367538A CN 103474551 A CN103474551 A CN 103474551A
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- led
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- great power
- line layer
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- 239000000758 substrate Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 11
- 238000000465 moulding Methods 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 11
- 239000000084 colloidal system Substances 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 4
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention relates to a high-power light-emitting diode (LED) substrate and a packaging method thereof. The high-power LED substrate comprises a bottom board layer, a circuit layer and an insulating solder mask which are arranged from bottom to top. Holes used for containing LED chips are formed in the circuit layer and the insulating solder mask, the bottom of each LED chip is directly welded on the bottom board layer. A dam in the prior art is omitted, so that a ceramic nozzle is not interfered in the LED wire bonding process, the welding yield is increased, the process of manufacturing and welding the dam is omitted, the production cost is reduced, and the production process is optimized. After a Molding process is adopted for packaging, the gel consistency of an LED convex mirror is high, and the optical distribution complexity is reduced. Emergent light of each chip is not blocked, and the luminous efficiency of a light source is improved.
Description
Technical field
The present invention relates to the great power LED field, be specifically related to a kind of substrate and method for packing thereof of great power LED.
Background technology
At present LED encapsulation be mainly by the LED chip electrode welding on the line layer of substrate, substrate generally adopts ceramic material or metal material, substrate is when production and processing, base plate bottom need process the groove of 0.1mm, in encapsulation process, for the leakage that prevents that the transition injecting glue from causing, the outside need of groove arranges box dam.Before bonding wire craft, therefore the box dam welded can be interfered with the porcelain mouth when the chip bonding wire, affect the bonding wire yields because of the box dam welding procedure.Box dam adopts the FR4 material to be made, and FR4 can not reflection ray, absorbs to a certain extent again the light produced by chip simultaneously, causes the final luminous flux of LED product to descend, and affects the chip light-emitting rate.The box dam that the FR4 material is made can not be controlled light source luminescent face size, causes optics luminous intensity distribution application difficult.Especially at the great power LED based on the copper base exploitation, adopt the tin cream welding procedure in the die bond process, therefore whole board mount needed Reflow Soldering, and box dam meeting in crossing reflow process is met high temperature and is out of shape, is shifted, and affects follow-up packaging technology.
Summary of the invention
The object of the present invention is to provide a kind of substrate of great power LED, can simplify board structure, improve the amount of light of LED encapsulating products.Another purpose is to provide a kind of packaging technology of substrate of great power LED, can optimized production process, reduce production costs.
A kind of substrate of great power LED, comprise the backplane level, insulating barrier, line layer, the solder mask that arrange from bottom to top.Wherein, insulating barrier, line layer and solder mask are provided with for holding the through hole of LED chip, and wherein, the LED chip bottom directly is welded on backplane level.
Concrete technical scheme is as follows:
A kind of substrate of great power LED, comprise backplane level, insulating barrier, line layer, and solder mask and LED chip, wherein, and backplane level, insulating barrier, line layer, solder mask and LED chip arrange from bottom to top, and the LED chip bottom directly is installed on backplane level.
Further, described solder mask, for the insulation solder mask, which is provided with for holding the through hole of LED chip.
Further, on line layer, also be provided with for holding the through hole of LED chip.
Further, described LED chip bottom directly is welded on backplane level.
Further, also comprise an insulating barrier, it,, between line layer and backplane level, is encapsulated in line layer on backplane level.
Further, described insulating barrier adopts insulating material.
Further, described insulating barrier also is provided with for holding the through hole of LED chip.
Further, described LED chip is welded on line layer, and its bottom contacts with backplane level, and its upper surface is externally exposed.
Further, described backplane level supports line layer, plays the effect of heat radiation for LED simultaneously.
The method for packing of the substrate of above-mentioned great power LED comprises the following steps:
(1) expand crystalline substance: by after the expansion of justifying chip dies, facilitate die bond machine die bond;
(2) die bond: put glue on package support, and chip is fixed on colloid, finally put into baking box and toasted;
(3) bonding wire: gold thread welding between chip and support, realize the LED circuit conducting;
(4) dot fluorescent powder: the complete product of bonding wire, apply fluorescent glue at chip surface and excite chip light emitting, after reaching product design light, look requirement, put into the baking box baking;
(5) embedding: use molding machine clamp clamping support, the casting glue that reinjects, when fixture is put into baking box baking foot, then take out the fixture demoulding.
With currently available technology, compare, the present invention has removed box dam of the prior art, makes LED bonding wire process porcelain mouth without interference, promotes the bonding wire yields, has omitted making, the welding procedure of box dam simultaneously, reduce production costs, and optimized production process.After adopting the encapsulation of Molding technique, LED convex lens colloid consistency is high, reduces optics luminous intensity distribution complexity.Chip light-emitting is unobstructed, promotes light source light-emitting efficiency.
The accompanying drawing explanation
The structural representation that Fig. 1 is high power LED substrate;
Fig. 2 is the packaging technology flow chart of high power LED substrate.
Embodiment
Below describe the present invention with reference to the accompanying drawings, it is a kind of preferred embodiment in numerous embodiments of the present invention.
As shown in Figure 1, a kind of substrate of great power LED, comprise the backplane level, insulating barrier, line layer, the solder mask that arrange from bottom to top, insulating barrier, line layer and solder mask are provided with for holding the through hole of LED chip, wherein, the LED chip bottom directly is welded on backplane level, and the LED chip electrode welding is on line layer.Backplane level is mainly in order to support line layer, plays the effect of heat radiation for LED chip simultaneously, and insulating barrier is encapsulated in line layer on backplane level, and line layer plays the thermolysis into LED for turning circuit simultaneously.In general, insulating barrier all will adopt insulating material, prevents from the circuit of line layer is caused to interference.For the ease of the setting of LED chip, line layer and insulating barrier all can be provided with for holding the through hole of LED chip, and like this, LED chip is welded on backplane level, thereby can guarantee that LED chip bottom contacts with backplane level guarantees good thermal diffusivity; On the other hand, LED chip can also pass through fluorescent glue, the outside distribute heat of line layer.Like this, in prior art, just omitted these parts of box dam, made LED bonding wire process porcelain mouth without interference, promoted the bonding wire yields, omitted making, the welding procedure of box dam simultaneously, reduced production costs, optimized production process.
A kind of packaging technology of substrate of great power LED specifically comprises the following steps:
(1) expand crystalline substance: by after the expansion of justifying chip dies, facilitate die bond machine die bond;
(2) die bond: put glue on base plate for packaging, and chip is fixed on colloid, finally put into baking box and toasted;
(3) bonding wire: gold thread welding between chip and substrate, realize the LED circuit conducting.
(4) dot fluorescent powder: the complete product of bonding wire, apply fluorescent glue at chip surface and excite chip light emitting, after reaching product design light, look requirement, put into the baking box baking.
(5) embedding: use molding machine clamp clamping substrate, casting glue reinjects.When fixture is put into baking box baking foot, then take out the fixture demoulding.
After adopting the encapsulation of Molding technique, LED convex lens colloid consistency is high, reduces optics luminous intensity distribution complexity.Chip light-emitting is unobstructed, promotes light source light-emitting efficiency.
The above is exemplarily described the present invention by reference to the accompanying drawings; obviously specific implementation of the present invention is not subject to the restrictions described above; as long as the various improvement that adopted method design of the present invention and technical scheme to carry out; or directly apply to other occasion without improvement, all within protection scope of the present invention.
Claims (10)
1. the substrate of a great power LED, comprise the backplane level, insulating barrier, line layer, the solder mask that arrange from bottom to top.Wherein, insulating barrier, line layer and solder mask are provided with for holding the through hole of LED chip, and wherein, the LED chip bottom directly is welded on backplane level.
2. the substrate of great power LED as claimed in claim 1, is characterized in that, described solder mask, for the insulation solder mask, which is provided with for holding the through hole of LED chip.
3. the substrate of great power LED as claimed in claim 1 or 2, is characterized in that, on line layer, also is provided with for holding the through hole of LED chip.
4. as the substrate of the described great power LED of any one in claim 1-3, it is characterized in that, described LED chip bottom directly is welded on backplane level.
5. as the substrate of the described great power LED of any one in claim 1-4, it is characterized in that, also comprise an insulating barrier, it,, between line layer and backplane level, is encapsulated in line layer on backplane level.
6. the substrate of great power LED as claimed in claim 5, is characterized in that, described insulating barrier adopts insulating material.
7. as the substrate of claim 5 or 6 described great power LEDs, it is characterized in that, described insulating barrier also is provided with for holding the through hole of LED chip.
8. as the substrate of the described great power LED of any one in claim 1-7, it is characterized in that, described LED chip is welded on line layer, and its bottom contacts with backplane level, and its upper surface is externally exposed.
9. as the substrate of the described great power LED of any one in claim 1-8, it is characterized in that, described backplane level supports line layer, plays the effect of heat radiation for LED simultaneously.
10. as the method for packing of the substrate of great power LED as described in claim 1-9, it is characterized in that, comprise the following steps:
(1) expand crystalline substance: by after the expansion of justifying chip dies, facilitate die bond machine die bond;
(2) die bond: put glue on package support, and chip is fixed on colloid, finally put into baking box and toasted;
(3) bonding wire: gold thread welding between chip and support, realize the LED circuit conducting;
(4) dot fluorescent powder: the complete product of bonding wire, apply fluorescent glue at chip surface and excite chip light emitting, after reaching product design light, look requirement, put into the baking box baking;
(5) embedding: use molding machine clamp clamping support, the casting glue that reinjects, when fixture is put into baking box baking foot, then take out the fixture demoulding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013103675381A CN103474551A (en) | 2013-08-21 | 2013-08-21 | High-power light-emitting diode (LED) substrate and packaging method thereof |
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| CN2013103675381A CN103474551A (en) | 2013-08-21 | 2013-08-21 | High-power light-emitting diode (LED) substrate and packaging method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167931A (en) * | 2014-07-28 | 2014-11-26 | 奇瑞汽车股份有限公司 | Power integration apparatus of low-voltage electric vehicle |
| CN105679914A (en) * | 2014-11-21 | 2016-06-15 | 程君 | Manufacturing method for LED composite glass substrate |
| CN106803531A (en) * | 2017-03-14 | 2017-06-06 | 奇瑞商用车（安徽）有限公司 | Car headlamp secondary light source |
| CN109585636A (en) * | 2018-12-05 | 2019-04-05 | 中山市华南理工大学现代产业技术研究院 | A kind of encapsulating structure of visible light communication LED chip array |
| CN112820814A (en) * | 2021-02-26 | 2021-05-18 | 上海鼎晖科技股份有限公司 | Dam-free COB LED substrate and preparation method and application thereof |
| CN115933246A (en) * | 2021-08-05 | 2023-04-07 | 海信视像科技股份有限公司 | Display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080261339A1 (en) * | 2007-04-17 | 2008-10-23 | Koung Chia-Yin | Packaging method to manufacture package for a high-power light emitting diode |
| CN101740708A (en) * | 2009-12-25 | 2010-06-16 | 杜姬芳 | Integration and package method for high-power light-emitting diode (LED) light source |
| CN101980388A (en) * | 2010-09-07 | 2011-02-23 | 浙江西子光电科技有限公司 | Radiator package-based LED device and manufacturing process for LED device |
| CN202058732U (en) * | 2011-03-11 | 2011-11-30 | 义乌市菲莱特电子有限公司 | High-power LED (light-emitting diode) white light panel with separated chip and fluorescent powder |
-
2013
- 2013-08-21 CN CN2013103675381A patent/CN103474551A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080261339A1 (en) * | 2007-04-17 | 2008-10-23 | Koung Chia-Yin | Packaging method to manufacture package for a high-power light emitting diode |
| CN101740708A (en) * | 2009-12-25 | 2010-06-16 | 杜姬芳 | Integration and package method for high-power light-emitting diode (LED) light source |
| CN101980388A (en) * | 2010-09-07 | 2011-02-23 | 浙江西子光电科技有限公司 | Radiator package-based LED device and manufacturing process for LED device |
| CN202058732U (en) * | 2011-03-11 | 2011-11-30 | 义乌市菲莱特电子有限公司 | High-power LED (light-emitting diode) white light panel with separated chip and fluorescent powder |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167931A (en) * | 2014-07-28 | 2014-11-26 | 奇瑞汽车股份有限公司 | Power integration apparatus of low-voltage electric vehicle |
| CN105679914A (en) * | 2014-11-21 | 2016-06-15 | 程君 | Manufacturing method for LED composite glass substrate |
| CN105679914B (en) * | 2014-11-21 | 2018-02-23 | 环视先进数字显示无锡有限公司 | A kind of manufacture method of LED compound glasses substrate |
| CN106803531A (en) * | 2017-03-14 | 2017-06-06 | 奇瑞商用车（安徽）有限公司 | Car headlamp secondary light source |
| CN109585636A (en) * | 2018-12-05 | 2019-04-05 | 中山市华南理工大学现代产业技术研究院 | A kind of encapsulating structure of visible light communication LED chip array |
| CN112820814A (en) * | 2021-02-26 | 2021-05-18 | 上海鼎晖科技股份有限公司 | Dam-free COB LED substrate and preparation method and application thereof |
| CN115933246A (en) * | 2021-08-05 | 2023-04-07 | 海信视像科技股份有限公司 | Display device |
| CN115933246B (en) * | 2021-08-05 | 2024-05-31 | 海信视像科技股份有限公司 | Display device |
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Application publication date: 20131225 |
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