CN101740708A - Integration and package method for high-power light-emitting diode (LED) light source - Google Patents
Integration and package method for high-power light-emitting diode (LED) light source Download PDFInfo
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- CN101740708A CN101740708A CN200910214202A CN200910214202A CN101740708A CN 101740708 A CN101740708 A CN 101740708A CN 200910214202 A CN200910214202 A CN 200910214202A CN 200910214202 A CN200910214202 A CN 200910214202A CN 101740708 A CN101740708 A CN 101740708A
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Abstract
The invention discloses an integration and package method for a high-power light-emitting diode (LED) light source, which comprises the steps of: making sets for chips, enlarging wafers, pricking chips, installing racks, fixing the wafers, pressure welding, spreading glue for package, baking for solidification, cutting ribs, testing, separating light and color, packaging to be put into a storage, and the like. The LED light source can be conveniently produced by using the package method of the invention, the manufacturing process is simple and convenient, the productivity effect is improved; compared with the traditional high-power light sources, the LED light source produced by the method is suitable for combination use, and has great improvement on the light effect and the consistency, thereby solving the the problem of poor luminance of a single light source.
Description
Technical field
The present invention relates to the integrated encapsulation method of the production field of led light source, particularly a kind of high-power LED light source.
Background technology
Led light source has that luminous efficiency height, power consumption are few, long service life, security reliability are strong, helps characteristics such as environmental protection, has obtained application in recent years in the urban lighting environment.Particularly under the background that the worry of global energy shortage raises once again, LED more enjoys the whole world to attract attention in the prospect of illumination market.
With regard to present circumstances, about 1-5W, light is exported only hundreds of lumen to the LED single tube power usually on the market.Make the real large-scale application of LED in public places such as road lightings, the luminous flux of led light source must reach several thousand even lumen up to ten thousand, and so high light output variable can't realize by single chips.For satisfying high light output requirement like this, the domestic and international at present combination of light sources of employing plurality of LEDs (being generally 1W) mostly satisfies the requirement of highlight illumination in a light fixture, and this mode has solved the problem of single light-source brightness deficiency to a certain extent.But there is the problem that manufacturing process is loaded down with trivial details, production efficiency is low, reliability is not high in this technology, and also there is the problem of light efficiency deficiency, consistency difference in the led light source of producing.
Summary of the invention
For addressing the above problem, the invention provides a kind of integrated encapsulation method of simple high-efficiency reliable high-power LED light source, all improve a lot than traditional led light source on led light source light efficiency that employing the method is produced and the consistency.
The technical scheme that the present invention is adopted for its problem of solution is:
The integrated encapsulation method of high-power LED light source may further comprise the steps:
(1) chip combo and expansion are brilliant: carry out the chip combo according to led chip static parameter and dynamic parameter, and chip expands brilliant the processing to arranging closely after the combo;
(2) thorn sheet and shelving: utilize thorn sheet process will expand the direct upside-down mounting of led chip behind the crystalline substance on heat sink, the electrode of described led chip is connected with the conductive layer of being located on heat sink by tin-containing material;
(3) solid brilliant: the electrode of described led chip and heat sink on conductive layer fixing by tin-containing material low melting point welding under ultrasonication;
(4) pressure welding: utilize the conductive layer extraction electrode of gold thread ball bonding on heat sink;
(5) some glue encapsulation:, be provided with the matching materials that is used for the interval between led chip and the phosphor powder layer at the bright dipping place coating fluorescent powder layer of led chip;
(6) baking-curing;
(7) cut muscle: finish the mask work between the led light source;
(8) test: the photoelectric parameter of test led light source, check overall dimension;
(9) beam split color separation: led light source is carried out sorting according to test result and customer requirements;
(10) packing warehouse-in.
Preferably, tin-containing material is a gold-tin alloy described in the step (3).
Preferably, described heat sink bottom is provided with heat dispersion substrate, is right after by heat-conducting glue between the described heat sink and heat dispersion substrate.
Preferably, the thickness of described phosphor powder layer is 0.3mm.
The invention has the beneficial effects as follows: utilize method for packing of the present invention can carry out the production of led light source easily, manufacturing process is simple and convenient, production efficiency is improved, the led light source that uses the method to produce is compared with traditional high power light source, light efficiency and consistency improve greatly, be suitable for being used in combination, thereby solve the problem of single light-source brightness deficiency.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples:
Fig. 1 is a method for packing flow chart of the present invention;
Fig. 2 is the structural representation of a kind of led light source embodiment of application the present invention making.
Embodiment
See figures.1.and.2, the integrated encapsulation method of high-power LED light source of the present invention may further comprise the steps:
(1) chip combo and expansion are brilliant: carry out the chip combo according to led chip static parameter and dynamic parameter, and expanding brilliant the processing to arranging closely chip after the combo, it is unaffected that chip is selected major decision indexs such as guaranteeing light-source brightness, wavelength, terminal voltage, reverse leakage electric current, working life;
(2) thorn sheet and shelving: utilize thorn sheet process will expand led chip 2 direct upside-down mountings behind the crystalline substance on heat sink 1, the electrode of described led chip is connected with the conductive layer of being located on heat sink 14 by tin-containing material 6, with tin-containing material 6 as between the led chip 2 and heat sink 1 be connected material (the conductive coefficient 67W/m*K of tin) can obtain comparatively desirable heat-conducting effect (thermal resistance be about 16 ℃/W), the heat-conducting effect and the physical characteristic of tin are much better than elargol, when practical application, heat sink 1 is generally siliceous material, and tin-containing material 6 is gold-tin alloy preferably;
(3) solid brilliant: the conductive layer 4 on the electrode of described led chip 2 and heat sink 1 is fixing by tin-containing material 6 low melting point welding under ultrasonication;
(4) pressure welding: utilize conductive layer 4 extraction electrodes 5 of gold thread ball bonding on heat sink 1;
(5) some glue encapsulation: at the bright dipping place coating fluorescent powder layer of led chip, be provided with between led chip and the phosphor powder layer and be used for matching materials at interval, improve light extraction efficiency, the uniformity of colour temperature and the stability of fluorescent material, eliminate the light macula lutea, wherein the thickness of phosphor powder layer is preferably 0.3mm;
(6) baking-curing, the product after the curing compares its luminous uniformity with the product that solidifies with traditional handicraft and consistency all increases significantly, obtain that colour temperature is fit to, illumination evenly, satisfy the light quality of light and shade vision;
(7) cut muscle: finish the mask work between the led light source;
(8) test: the photoelectric parameter of test led light source, check overall dimension;
(9) beam split color separation: led light source is carried out sorting according to test result and customer requirements;
(10) packing warehouse-in.
In addition, when the invention process, heat sink 1 bottom generally also is provided with heat dispersion substrate 3, described heat sink 1 and heat dispersion substrate 3 between be right after by heat-conducting glue.The heat dispersion substrate 3 preferred copper bases that adopt have better thermal efficiency, are suitable for hot environment and high power or high electric current LED simultaneously.When selecting suitable substrate, except the pyroconductivity of considering material itself, also must consider the matching problem of material thermal expansion coefficient and chip, avoid the appearance of thermal stress and thermal deformation to damage structure.
The led light source that uses institute of the present invention record method to produce is compared with traditional high power light source, light efficiency and uniformity improve greatly, be suitable for being used in combination, thereby solve the problem of single light-source brightness deficiency, can be widely used in multi-field many occasions such as street lamp, Tunnel Lamp, floodlight, commercial lighting, room lighting.
Claims (4)
1. the integrated encapsulation method of high-power LED light source is characterized in that may further comprise the steps:
(1) chip combo and expansion are brilliant: carry out the chip combo according to led chip static parameter and dynamic parameter, and chip expands brilliant the processing to arranging closely after the combo;
(2) thorn sheet and shelving: utilize thorn sheet process will expand the direct upside-down mounting of led chip behind the crystalline substance on heat sink, the electrode of described led chip is connected with the conductive layer of being located on heat sink by tin-containing material;
(3) solid brilliant: the electrode of described led chip and heat sink on conductive layer fixing by tin-containing material low melting point welding under ultrasonication;
(4) pressure welding: utilize the conductive layer extraction electrode of gold thread ball bonding on heat sink;
(5) some glue encapsulation:, be provided with the matching materials that is used for the interval between led chip and the phosphor powder layer at the bright dipping place coating fluorescent powder layer of led chip;
(6) baking-curing;
(7) cut muscle: finish the mask work between the led light source;
(8) test: the photoelectric parameter of test led light source, check overall dimension;
(9) beam split color separation: led light source is carried out sorting according to test result and customer requirements;
(10) packing warehouse-in.
2. the integrated encapsulation method of high-power LED light source according to claim 1 is characterized in that tin-containing material is a gold-tin alloy described in the step (3).
3. the integrated encapsulation method of high-power LED light source according to claim 1 is characterized in that described heat sink bottom is provided with heat dispersion substrate, is right after by heat-conducting glue between the described heat sink and heat dispersion substrate.
4. the integrated encapsulation method of high-power LED light source according to claim 1, the thickness that it is characterized in that described phosphor powder layer is 0.3mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910214202A CN101740708A (en) | 2009-12-25 | 2009-12-25 | Integration and package method for high-power light-emitting diode (LED) light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910214202A CN101740708A (en) | 2009-12-25 | 2009-12-25 | Integration and package method for high-power light-emitting diode (LED) light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101740708A true CN101740708A (en) | 2010-06-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910214202A Pending CN101740708A (en) | 2009-12-25 | 2009-12-25 | Integration and package method for high-power light-emitting diode (LED) light source |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102537872A (en) * | 2011-01-04 | 2012-07-04 | 康佳集团股份有限公司 | Direct illumination type light emitting diode (LED) backlight module and manufacturing method thereof |
| CN102832323A (en) * | 2012-09-04 | 2012-12-19 | 江苏尚明光电有限公司 | Packaging process of high-power light-emitting diode (LED) |
| CN103050488A (en) * | 2011-10-14 | 2013-04-17 | 深圳市蓝科电子有限公司 | Light-emitting diode (LED) for display screen and production method |
| CN103474551A (en) * | 2013-08-21 | 2013-12-25 | 奇瑞汽车股份有限公司 | High-power light-emitting diode (LED) substrate and packaging method thereof |
| CN104347461A (en) * | 2013-08-07 | 2015-02-11 | 方晶科技股份有限公司 | Heat transfer device for LED (Light-Emitting Diode) |
| WO2015017993A1 (en) * | 2013-08-07 | 2015-02-12 | 方晶科技股份有限公司 | Heat transmission apparatus for light-emitting diode |
| CN105226165A (en) * | 2015-09-21 | 2016-01-06 | 安徽科发信息科技有限公司 | A kind of LED technique |
| CN105609597A (en) * | 2015-12-24 | 2016-05-25 | 东莞中之光电股份有限公司 | Inverted assembly process flow of light emitting diode (LED) chip |
| CN112974668A (en) * | 2021-04-27 | 2021-06-18 | 四川明泰电子科技有限公司 | Semiconductor device bar cutting device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787242A (en) * | 2004-12-10 | 2006-06-14 | 北京大学 | Method for packing inverted mounting LED chip |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
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2009
- 2009-12-25 CN CN200910214202A patent/CN101740708A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787242A (en) * | 2004-12-10 | 2006-06-14 | 北京大学 | Method for packing inverted mounting LED chip |
| CN101369614A (en) * | 2007-08-17 | 2009-02-18 | 刘胜 | Packaging structure and method for high power white light LED |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102537872A (en) * | 2011-01-04 | 2012-07-04 | 康佳集团股份有限公司 | Direct illumination type light emitting diode (LED) backlight module and manufacturing method thereof |
| CN103050488A (en) * | 2011-10-14 | 2013-04-17 | 深圳市蓝科电子有限公司 | Light-emitting diode (LED) for display screen and production method |
| WO2013053192A1 (en) * | 2011-10-14 | 2013-04-18 | 深圳市蓝科电子有限公司 | Light-emitting diode used by display screen and preparation method |
| CN102832323A (en) * | 2012-09-04 | 2012-12-19 | 江苏尚明光电有限公司 | Packaging process of high-power light-emitting diode (LED) |
| CN102832323B (en) * | 2012-09-04 | 2016-05-04 | 江苏尚明光电有限公司 | A kind of packaging technology of great power LED |
| CN104347461A (en) * | 2013-08-07 | 2015-02-11 | 方晶科技股份有限公司 | Heat transfer device for LED (Light-Emitting Diode) |
| WO2015017993A1 (en) * | 2013-08-07 | 2015-02-12 | 方晶科技股份有限公司 | Heat transmission apparatus for light-emitting diode |
| CN103474551A (en) * | 2013-08-21 | 2013-12-25 | 奇瑞汽车股份有限公司 | High-power light-emitting diode (LED) substrate and packaging method thereof |
| CN105226165A (en) * | 2015-09-21 | 2016-01-06 | 安徽科发信息科技有限公司 | A kind of LED technique |
| CN105609597A (en) * | 2015-12-24 | 2016-05-25 | 东莞中之光电股份有限公司 | Inverted assembly process flow of light emitting diode (LED) chip |
| CN112974668A (en) * | 2021-04-27 | 2021-06-18 | 四川明泰电子科技有限公司 | Semiconductor device bar cutting device |
| CN112974668B (en) * | 2021-04-27 | 2021-07-23 | 四川明泰电子科技有限公司 | Semiconductor device bar cutting device |
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Application publication date: 20100616 |