CN1787242A - Method for packing inverted mounting LED chip - Google Patents
Method for packing inverted mounting LED chip Download PDFInfo
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- CN1787242A CN1787242A CNA200410098902XA CN200410098902A CN1787242A CN 1787242 A CN1787242 A CN 1787242A CN A200410098902X A CNA200410098902X A CN A200410098902XA CN 200410098902 A CN200410098902 A CN 200410098902A CN 1787242 A CN1787242 A CN 1787242A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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Abstract
The invention provides a method for packaging a LED flip-chip, raising the outer quantum efficiency of the LED. It directly bonds high thermal conductivity Al and Au with the chip, thus reducing packaging thermal resistance and the flip-chip packaging cost. It uses thick Cu and Au bumps to directly bond the inverted chip with an Al printed circuit board (PCB), then pastes on a reflecting cup, coats colloid on the chip, and finally puts a lens cover on and obtains an Al PCB package. It directly bonds the LED flip-chip onto an improved Al substrate, omitting a process of making Si substrate and simultaneously the direct bonding of flip-chip and heat-sink effectively raises the cooling efficiency. The advantage of the thick Cu lies in high thermal conductivity and lower line resistance, able to reduce heat emission and the Al substrate has higher cooling efficiency and further reduces packaging thermal resistance. The Au bumps are blocked up, reducing sharing force caused by thermal expansion and beneficial to the bonding of the flip-chip with the Al substrate.
Description
Technical field
The present invention relates to the encapsulation of led chip in the field of photoelectric technology, relate in particular to a kind of method for packing of flip LED chips.
Background technology
White light emitting diode (LED) is because advantages such as its energy-saving and environmental protection, long-life are becoming the basis of semiconductor lighting, thereby causing people's extensive attention.White light LEDs normally utilizes blue-ray LED to excite gold-tinted, red light fluorescent powder to be combined into white light, or utilizes purple LED to excite the three primary colors fluorescent powder synthesize white light.And the LED of the indicator light form of traditional 3mm and 5mm encapsulation can not be satisfied the needs of white-light illuminating, and there is the packaging thermal resistance height in it, and light decay is serious, and luminous efficiency is low, and power is little, shortcomings such as cost costliness.Therefore people press for a kind of technology of preparing of efficient, great power LED to promote the illumination revolution of a new round.
The key issue of high-power LED encapsulation is heat radiation and bright dipping.Initial great power LED technology of preparing is just simply chip size, and support, shells etc. are simple to be amplified, therefore luminous efficiency, light decay etc. do not improve, amplification along with chip size, current gathering effect becomes seriously, and because the use of GaN base LED transparency electrode has had a strong impact on the especially luminous efficiency of purple light of blue light.Flip chip bonding led chip electrode is inverted on the heat dispersion heat sink, light is directly from the sapphire surface outgoing, chip at more traditional formal dress aspect heat radiation, the bright dipping has bigger advantage, and the p electrode is made up of thick metal, the Au salient point is evenly distributed on the p electrode surface, CURRENT DISTRIBUTION is even, further improves the LED internal quantum efficiency.So GaN based power type LED flip chip bonding (flip-chip) technology is subjected to people's extensive attention.
Comparatively typical LED flip-chip packaging technology be earlier chip by au bump and Si substrate bonding, on the Si substrate, draw positive and negative electrode then, be integral with base, lens packages again.This encapsulation need heat sink with other (as the A1 substrate) link to each other, and could effectively reduce thermal resistance.But because Si substrate volume is bigger, and thermal conductivity has only the 1/2-1/3 of metals such as Al, Cu, and it is unfavorable therefore to dispel the heat, and Feng Zhuan volume phase strain simultaneously is big, carries out difficulty of array package.
Summary of the invention
The method for packing that the purpose of this invention is to provide a kind of high-power LED flip-chip improves the LED external quantum efficiency, omits Si substrate manufacture technology.Utilize Al, the Cu of high heat conductance, direct and chip bonding reduces packaging thermal resistance, reduces the cost of flip-chip encapsulation simultaneously.The present invention utilizes thick Cu and Au salient point upside-down mounting welding core and Al printed circuit board (PCB) Direct Bonding, is stained with reflector then, smears colloid on chip, buckles the Al printed circuit board (PCB) encapsulation that lens cap obtains flip-chip at last.
According to flip chip mounting method of the present invention, concrete steps are as follows:
(1) at first the thickening Cu layer (more than 50 microns) improvement Al printed circuit board (1-2mm) on, do mask with the insulation colloid, erode away bonding welding point, lead and lead solder-joint.
(2) selective removal mask exposes bonding welding point and lead solder-joint.On solder joint, electroplate Au.
(3) utilize flip chip bonding equipment, chip directly and Al printed circuit board (PCB) bonding by the Au salient point on the flip-chip and bonding welding point.
(4) reflector (in plate the Ag reflector) that metallic channel is carved with in the bottom is bonded on the Al printed circuit board (PCB) by colloid.Wherein Zui Jia mode is center at the bottom of chip is positioned at glass, and the Cu lead is in metallic channel.
(5) mixture of can resin colloid or resin colloid and fluorescent material in reflector.The mixture height of can resin colloid or resin colloid and fluorescent material is preferably a little less than the upper edge of cup.Colloid solidifies.
(6) to be stained with the epoxy resin colloid and the reflector planar section of homogeneity bonding for the lens cap of band fixing feet.Air-gap in the middle of removing solidifies.
The direct pressure welding of flip-chip on improved Al printed circuit board, the double substrate and heat sink of doing of Al plate.Simultaneously as lead,, and serve as the resilient coating of Au pressure welding with thick Cu as heat transfer agent.
Description of drawings
Below in conjunction with accompanying drawing the present invention is illustrated in further detail:
Fig. 1 is a flip-chip LED encapsulating structure profile;
Fig. 2 is the flip-chip LED encapsulation plane graph based on the Al substrate of 1W;
Fig. 3 is the single reflector flip-chip LED encapsulation plane graph based on the Al substrate of 5W;
Fig. 4 is the multiple reflection cup flip-chip LED encapsulation plane graph based on the Al substrate of 5W.
Most preferred embodiment is described in detail
Below with reference to accompanying drawing of the present invention, more detailed description goes out most preferred embodiment of the present invention.
Owing to adopt LED flip-chip, there is certain problem in the encapsulation technology of existing LED, and the new LED encapsulation technology that the present invention proposes is a key of the present invention.How to solve the encapsulation problem of heat radiation, light extraction efficiency, electrical connection, below in conjunction with the drawings and specific embodiments, more detailed description particular content of the present invention.
As shown in Figure 1, the invention provides the method for packing of a kind of high-power LED flip-chip, according to the method for packing of flip LED chips of the present invention, concrete steps are as follows:
(1) (comprises oxide layer in Al substrate superstructure 2 by Al substrate 1 (thickness 1-2mm) and plating thick Cu (more than 50 microns), copper) on the on-gauge plate basis of Zu Chenging, do mask with the insulation colloid, erode away bonding welding point 6a, 6b (corresponding n electrode and p electrode respectively), lead and lead solder- joint 10a, 10b (corresponding n electrode and p electrode respectively).
(2) selective removal mask exposes bonding welding point and lead solder-joint.On above-mentioned solder joint, electroplate Au pad 7.Thickness 7-10 micron.
(3) (from top to bottom structure is followed successively by: n-GaN polished substrate of sapphire 8 and flip-chip structure 9, InGaN/GaN MQW, p-GaN, the Ni/Au contact, the Ag reflector, the Au salient point) be bonded on Al substrate 1 and the thick Cu 2 by 7 upside-down mountings of bonding Au pad, utilize flip chip bonding equipment, by the Au salient point on the flip-chip and bonding welding point chip and Al printed circuit board (PCB) bonding.
(4) reflector 3 (in plate the Ag reflector) that metallic channel 11 is carved with in the bottom is bonded on the substrate 1 by colloid.Center at the bottom of making chip be positioned at glass.The Cu lead is in metallic channel 11.
(5) mixture 5 of can resin colloid or itself and fluorescent material in reflector 3.The colloid height is a little less than the upper edge of cup.Colloid 5 high temperature solidify down.Curing temperature is at 100-130 ℃.
(6) lens cap 4 is stained with epoxy resin liquid and tips upside down on reflector 3 upper edges, get rid of the air-gap in the reflection, baking and curing.Curing temperature is at 100-130 ℃.
The present invention will bring great economic benefit for the semiconductor lighting industry: packaging thermal resistance reach 10 ℃/below the W, greatly improve chip reliability, the design of reflector and set of lenses simultaneously, effectively improve light extraction efficiency, owing to omitted the heat sink technique for sticking of Si substrate and back, reduce the complex process degree widely, reduced production cost.
The concrete characteristics of the present invention comprise:
(1) LED flip-chip is bonded directly on the improved Al substrate, has omitted the manufacture craft of Si substrate, the direct and heat sink flip chip bonding of chip has effectively increased radiating efficiency simultaneously.
(2) advantage of thick Cu is that the thermal conductivity of Cu is higher, has higher heat-transfer rate, and simultaneously as lead, thick Cu line resistance is lower, can reduce heating, and the Al substrate has higher radiating efficiency, and a nearly step is reduced packaging thermal resistance.Another advantage is with the chip bed hedgehopping, helps the side bright dipping.Because the Au salient point by bed hedgehopping, reduces the shearing force that thermal expansion causes, and helps the bonding (bonding) of flip-chip and Al substrate.
(3) with the bonding fluorescent powder colloid of packing colloid and the lens cap of homogeneity, the air-gap in the middle of removing, thus increase light extraction efficiency.Fluorescent powder colloid is basic and the reflector upper edge is fair, a little less than the height of upper edge.It is bonding that the lens cap of band fixing feet is stained with the epoxy resin colloid and the reflector planar section of homogeneity.
(4) reverberation bowl is a parabolic shape, in plate the Ag reflector, reflect with the light that guarantees the side and from the light of epoxy resin and air interface total reflection.Lens cap adopts the planar lens array structure, can make flip-chip array light extraction efficiency for maximum effectively, obtains the distribution curve flux of good LED lamp simultaneously.
(5) utilize Al base circuit board printing technology to realize the reliable problem that is electrically connected and insulate easily.Relatively the Si thermal conductivity is high 2 times for the Al material simultaneously, and this will significantly reduce the thermal resistance of LED.Al substrate process cost is very low, with existing flip chip bonding technology also can be compatible, can solve the problem of large-scale production.
Be illustrated in figure 2 as flip-chip white light LEDs encapsulation (AIP-1W encapsulation) plane graph based on the Al substrate according to first embodiment of the present invention 1W, aluminium base is of a size of 20mm, three circular diameters are respectively 2.4,6,10mm, difference upper and lower edge of corresponding reflector and lens cap outer, red expression Cu line, gold is the Au pad.Describe this embodiment in detail below in conjunction with accompanying drawing:
(comprise oxide layer in Al substrate superstructure 2 by Al substrate 1 (thickness 1-2mm) and plating thick Cu (more than 50 microns), copper) on the on-gauge plate basis of Zu Chenging, do mask with the insulation colloid, erode away bonding welding point 6a, 6b (corresponding n electrode and p electrode respectively), lead and lead solder- joint 10a, 10b (corresponding n electrode and p electrode respectively).The selective removal mask exposes bonding welding point and lead solder-joint.On above-mentioned solder joint, electroplate Au pad 7.Thickness 7-10 micron.(from top to bottom structure is followed successively by: n-GaN polished substrate of sapphire 8 and flip-chip structure 9, InGaN/GaN MQW, p-GaN, the Ni/Au contact, the Ag reflector, the Au salient point) be bonded on Al substrate 1 and the thick Cu 2 by 7 upside-down mountings of bonding Au pad, utilize flip chip bonding equipment, by the Au salient point on the flip-chip and bonding welding point chip and Al printed circuit board (PCB) bonding.The reflector 3 (in plate the Ag reflector) that the bottom is carved with metallic channel 11 is bonded on the substrate 1 by colloid.Center at the bottom of making chip be positioned at glass.The Cu lead is in metallic channel 11.The mixture 5 of can resin colloid or itself and fluorescent material in reflector 3.The colloid height is a little less than the upper edge of cup.Colloid 5 high temperature solidify down.Curing temperature is at 100-130 ℃.Lens cap 4 is stained with epoxy resin liquid tips upside down on reflector 3 upper edges, get rid of the air-gap in the reflection, baking and curing.Curing temperature is at 100-130 ℃.
AIP-1W encapsulation major advantage is:
(i) use the Al printed circuit board, cooperate electroplating technology, can finish the design of reliable electrical connection;
(ii) flexible design can carry out positive bright dipping, flip-chip, the encapsulation of the multiple large size chip of top-bottom electrode structures;
(iii) reflector and lens cap are convenient to design, processing;
(iv) use bigger Al circuit board of area of dissipation and the high Cu of the capacity of heat transmission, have better radiating effect;
(v) plating thick Cu layer helps heat conduction, bright dipping, helps the bonding of flip chip bonding; For flip-chip, do not need the substrate of Si, and directly on aluminium base, electroplate salient point, thereby finish bonding with flip-chip.
Be illustrated in figure 3 as a kind of according to a second embodiment of the present invention single reverberation bowl, flip-chip 5W white light LEDs encapsulation (AlP-SF-5W) based on the Al substrate, aluminium base is of a size of 20mm, three circular diameters are respectively 5,9,12mm, difference upper and lower edge of corresponding reflector and lens cap outer, red expression Cu line, gold is the Au pad, grey is a chip.Particular content is as follows:
(comprise oxide layer in Al substrate superstructure 2 by Al substrate 1 (thickness 1-2mm) and plating thick Cu (more than 50 microns), copper) on the on-gauge plate basis of Zu Chenging, do mask with the insulation colloid, erode away bonding welding point 6a, 6b (corresponding n electrode and p electrode respectively), lead and lead solder- joint 10a, 10b (corresponding n electrode and p electrode respectively).The selective removal mask exposes bonding welding point and lead solder-joint.On above-mentioned solder joint, electroplate Au pad 7.Thickness 7-10 micron.(from top to bottom structure is followed successively by: n-GaN polished substrate of sapphire 8 and flip-chip structure 9, InGaN/GaN MQW, p-GaN, the Ni/Au contact, the Ag reflector, the Au salient point) be bonded on Al substrate 1 and the thick Cu2 by 7 upside-down mountings of bonding Au pad, utilize flip chip bonding equipment, by the Au salient point on the flip-chip and bonding welding point chip and Al printed circuit board (PCB) bonding.The reflector 3 (in plate the Ag reflector) that the bottom is carved with metallic channel 11 is bonded on the substrate 1 by colloid.Center at the bottom of making chip be positioned at glass.The Cu lead is in metallic channel 11.The mixture 5 of can resin colloid or itself and fluorescent material in reflector 3.The colloid height is a little less than the upper edge of cup.Colloid 5 high temperature solidify down.Curing temperature is at 100-130 ℃.Lens cap 4 is stained with epoxy resin liquid tips upside down on reflector 3 upper edges, get rid of the air-gap in the reflection, baking and curing.Curing temperature is at 100-130 ℃.
Present embodiment also has the brightness height except the advantage with embodiment one, than the big 2-3 of luminous power of AIP-1W unit are doubly, have distribution curve flux preferably, no dark space in the 1m illumination range.
Be illustrated in figure 4 as a kind of multiple reflection bowl of a third embodiment in accordance with the invention, flip-chip 5W white light LEDs encapsulation (AlP-MF-5W) based on the Al substrate, aluminium base is of a size of 40mm, every unit three circular diameters are respectively 2.4,6,10mm, upper and lower edge of corresponding reflector and lens cap outer respectively, red expression Cu line, gold is the Au pad.Particular content is as follows:
(comprise oxide layer in Al substrate superstructure 2 by Al substrate 1 (thickness 1-2mm) and plating thick Cu (more than 50 microns), copper) on the on-gauge plate basis of Zu Chenging, do mask with the insulation colloid, erode away bonding welding point 6a, 6b (corresponding n electrode and p electrode respectively), lead and lead solder- joint 10a, 10b (corresponding n electrode and p electrode respectively).The selective removal mask exposes bonding welding point and lead solder-joint.On above-mentioned solder joint, electroplate Au pad 7.Thickness 7-10 micron.(from top to bottom structure is followed successively by: n-GaN polished substrate of sapphire 8 and flip-chip structure 9, InGaN/GaN MQW, p-GaN, the Ni/Au contact, the Ag reflector, the Au salient point) be bonded on Al substrate 1 and the thick Cu2 by 7 upside-down mountings of bonding Au pad, utilize flip chip bonding equipment, by the Au salient point on the flip-chip and bonding welding point chip and Al printed circuit board (PCB) bonding.The reflector 3 (in plate the Ag reflector) that the bottom is carved with metallic channel 11 is bonded on the substrate 1 by colloid.Center at the bottom of making chip be positioned at glass.The Cu lead is in metallic channel 11.The mixture 5 of can resin colloid or itself and fluorescent material in reflector 3.The colloid height is a little less than the upper edge of cup.Colloid 5 high temperature solidify down.Curing temperature is at 100-130 ℃.Lens cap 4 is stained with epoxy resin liquid tips upside down on reflector 3 upper edges, get rid of the air-gap in the reflection, baking and curing.Curing temperature is at 100-130 ℃.
Present embodiment is except the advantage of the side of having embodiment two, and this encapsulation has better been considered the problem of chip sides bright dipping than embodiment two, electrically connects reliably, and good heat dispersion performance has higher light extraction efficiency.When set of lenses is made lens arra, then can suitably reduce the spacing of chip, thereby obtain two similar luminosity with embodiment.It has bigger flexibility on led array is arranged simultaneously, and the illumination that is fit to various requirement is used.
Although disclose above three kinds of embodiment of the present invention and accompanying drawing for the purpose of illustration, it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various replacements, variation and modification all are possible.Therefore, the present invention should not be limited to most preferred embodiment and the disclosed content of accompanying drawing.
Claims (9)
1. the method for packing of a flip LED chips specifically may further comprise the steps:
(1) at first on the improvement Al printed circuit board of thickening Cu layer, do mask with the insulation colloid, erode away bonding welding point, lead and lead solder-joint;
(2) remove mask, expose bonding welding point and lead solder-joint, on solder joint, electroplate Au;
(3) utilize flip chip bonding equipment, chip directly and Al printed circuit board (PCB) bonding by the Au salient point on the upside-down mounting welding core and bonding welding point;
(4) reflector that metallic channel is carved with in the bottom is bonded on the Al printed circuit board (PCB) by colloid;
(5) mixture of can resin colloid or resin colloid and fluorescent material in reflector, colloid solidifies;
(6) to be stained with epoxy resin colloid and the reflector planar section of homogeneity bonding for the lens cap of band fixing feet, the air-gap in the middle of removing, curing.
2. the method for packing of flip LED chips according to claim 1 is characterized in that: the direct pressure welding of flip-chip on improved Al printed circuit board, the double substrate and heat sink of doing of Al plate.
3. the method for packing of flip LED chips according to claim 1 is characterized in that: simultaneously as lead, as heat transfer agent, and serve as the resilient coating of Au pressure welding with thick Cu.
4. the method for packing of flip LED chips according to claim 1 is characterized in that: when being bonded in reflector on the Al printed circuit board (PCB) by colloid, and center at the bottom of chip is positioned at glass, the Cu lead is in metallic channel.
5. the method for packing of flip LED chips according to claim 1, it is characterized in that: during the mixture of can resin colloid or resin colloid and fluorescent material, the fill level of the mixture of resin colloid or resin colloid and fluorescent material is a little less than the upper edge of cup in reflector.
6. the method for packing of flip LED chips according to claim 1, it is characterized in that: bonding welding point has two groups, is respectively the bonding welding point of corresponding n electrode and the bonding welding point of p electrode.
7. the method for packing of flip LED chips according to claim 1, it is characterized in that: lead solder-joint has two groups, is respectively the lead solder-joint of corresponding n electrode and the lead solder-joint of p electrode.
8. the method for packing of flip LED chips according to claim 1 is characterized in that: be coated with the Ag reflector in the reflector.
9. the method for packing of flip LED chips according to claim 4, it is characterized in that: the mixture of can resin colloid or resin colloid and fluorescent material at high temperature solidifies, and curing temperature is at 100-130 ℃.
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| CNB200410098902XA CN100380694C (en) | 2004-12-10 | 2004-12-10 | Method for packing inverted mounting LED chip |
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Assignee: Zhongshan Hongbao Power Co., Ltd. Assignor: Peking University Contract record no.: 2010440000661 Denomination of invention: Packaging method for flip LED chips Granted publication date: 20080409 License type: Exclusive License Open date: 20060614 Record date: 20100608 |
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