CN109461753A - It is a kind of to inject upside-down mounting micron LED chip and preparation method thereof greatly - Google Patents
It is a kind of to inject upside-down mounting micron LED chip and preparation method thereof greatly Download PDFInfo
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention discloses a kind of big injection upside-down mounting micron LED chips and preparation method thereof.The present invention passes through first graphically buries and controls the processes such as electron beam evaporation, photoetching, inverted structure in parallel is finally realized in the chip, so that big Injection Current uniformly expands to each LED terminal in array, chip and thermal-conductivity substrate are welded again, greatly promote the heat dissipation performance of high-power die；Bus adds pectinate texture to solve the extension homogeneity question of the electric current in p-type transparent electrode；Around the large area N-type electrode of mode, solve the problems, such as current flow uniformity and heat dissipation problem；Eutectic welding manner is used between LED chip and heat-radiating substrate, is radiated and is improved the process controllability welded between substrate and chip in welding process；P-type transparent electrode and N-type electrode are designed to coplanar waveguide structure, to improve micron LED chip in the bandwidth of visible light communication.
Description
Technical field
The present invention relates to visible light communication LED technologies, and in particular to a kind of injection upside-down mounting micron LED chip and its preparation greatly
Method.
Background technique
In recent years, LED has been increasingly becoming the principal light source of room lighting.And since LED has higher efficiency, more long-lived
The characteristics of life, in addition to lighting area indoors, back lighting, full-color display, in terms of all there is strong answer
Use demand.Especially in LED lamp after load communication function (Li-Fi), LED has more extensive application prospect.It compares
In Conventional wide band access technology, Li-Fi have transmission data rate height, positioning accuracy height, strong security, without electromagnetic interference, be not necessarily to
Radio-frequency spectrum authenticate the advantages that, be the special occasions such as, safe and secret sensitive to electromagnetic interference ideal short-distance wireless access/
Locating scheme.
But the conventional white light LED three dB bandwidth for illumination only has several MHz to tens MHz, often require to use it is balanced,
The magnitude that the technologies such as multichannel input and output, multiplexing make message transmission rate reach Gbps.On the one hand make communication system in this way
Complexity, cost is prohibitively expensive, and on the other hand often transmission range is limited for these visible light signals through ovennodulation, limits in fact
The application on border.The various technologies for improving LED chip bandwidth are proposed by researcher, including micron (micro) LED technology, non-pole
Property/semi-polarity LED technology, surface phasmon technology, quantum dot fluorescence powder technology etc..Wherein micro LED technology because
It is and in widespread attention with conventional LED chip process compatible.
The three dB bandwidth of the Micro LED reported in the world has reached the level of about 1GHz.This mainly utilizes micro-
The electric current uniform expansion characteristic of LED chip, the injected current density of chip reach kA/cm2 or more.According to bandwidth fc and injection electricity
Current density J relationship:
Wherein B is radiative recombination coefficient, and t is active area thickness, and q is electron charge.I.e. with the increasing of injected current density
Add, bandwidth can increase in square root relationship.Although bandwidth can be increased monotonically with current density increase, with electric current
Density increases, and the current expansion and heat dissipation problem of LED is also very prominent.U.S. Chakraborty et al.
(Appl.Phys.Lett.88,181120 (2006)) are expanded using the electric current that the bussing technique of interdigitated solves micro LED
Exhibition problem, but heat dissipation problem can not be fully solved.Three-D high frequency electromagnetic-field simulation tool HFSS simulation finds theirs
Right angle pixel unit geometry is also unfavorable for the feed-in of high-frequency signal.South China Normal University Guo Zhiyou (CN201510492225) is utilized
Annular electrode structure improves electron-hole recombinations rate, but the current expansion under the big injected current density of chip and heat dissipation exist
Larger problem.
Pixel unit directly can be directly welded at heat dissipation together with n-electrode by flip-chip (flip-chip) welding technique
On substrate (submount), so that LED pixel hot zone is directly radiated to substrate, radiating efficiency is greatly improved.Micro simultaneously
The p of LED array, n-electrode interconnection carry out on chip and submount respectively, further increase current expansion ability and pixel list
The flexibility of meta design.
Summary of the invention
For the above problems of the prior art, the present invention proposes the big injection of one kind and falls towards visible light communication
Fill micron LED chip and preparation method thereof.
An object of the present invention is to provide a kind of big injection upside-down mounting micron LED chips.
Big injection upside-down mounting micron LED chip of the invention includes: growth substrates, N-type GaN layer, micron luminous table top, electrode
Insulating layer, N-type electrode, p-type transparent electrode, reflective layer, metal screed-coat, N-type pad, p-type pad, substrate, substrate insulating layer,
N-type electrode current bus, P-type electrode current bus, N pad and P pad；Wherein, N-type GaN layer is formed in growth substrates；?
Successively grown quantum trap and p-type GaN layer in N-type GaN layer form p-type transparent electrode in extension on piece to form epitaxial wafer；
P-type transparent electrode and epitaxial wafer are etched to part N-type GaN layer, to form array arrangement in remaining part N-type GaN layer
Micron shine table top, micron shine table top from bottom to up successively include part N-type GaN layer, Quantum Well, p-type GaN layer and p-type
Transparent electrode；It shines in micron and forms circular N-type electrode around table top, N-type electrode and micron shine and do not connect between table top
Touching, the surface of N-type electrode and the surface of p-type transparent electrode are in approximately the same plane；In the p-type of N-type electrode and the luminous table top of micron
Electrode dielectric layer is filled between transparent electrode；It shines in micron and forms reflective layer on table top；Metal is formed on the surface of N-type electrode
The surface of screed-coat, the surface of metal screed-coat and electrode dielectric layer and reflective layer is in approximately the same plane；It is being connected to N-type electrode
Metal screed-coat on formed N-type pad；P-type pad is formed in p-type transparent electrode, to form LED chip；On substrate
Form substrate insulating layer；It is corresponding with the N-type pad and p-type pad being formed on epitaxial wafer respectively, the shape on substrate insulating layer
At the P pad of N pad and array arrangement, a plurality of each P pad of connection is set between the array of the P pad on substrate insulating layer
Electrode current extend line；The edge surface that substrate insulating layer is not formed on substrate forms N-type electrode current bus and p-type
Electrode current bus；N pad is connected to N-type electrode current bus, and it is total that a plurality of electrode current extension line is connected to P-type electrode electric current
Line forms pectinate texture；N pad is directed at eutectic welding with N-type pad, and P pad is directed at eutectic welding with p-type pad；N-type
Electrode current bus and P-type electrode current bus are respectively connected to external circuit.
The eutectic that P pad is aligned with p-type pad is welded as independent welding.
N-type electrode is interconnected in LED chip and realizes；P-type transparent electrode is interconnected on substrate and realizes.
Growth substrates use sapphire or gallium nitride GaN substrate.
N-type electrode includes successively from bottom to up layers of chrome, platinum layer and layer gold, to form Cr/Pt/Au electrode.
The surface shape of the luminous table top of micron is circle, and the diameter on the surface of the luminous table top of micron is 5~200 μm；Array
The number of the luminous table top of the micron of arrangement is 2~1000.Inward flange around the N-type electrode of the luminous table top of micron is also round.P
The surface shape of type transparent electrode is circle.
Reflective layer uses the metal material with reflective, such as aluminium；Thickness 1nm~100 μm.
Substrate is using the smooth material of high resistivity, good heat conductivity and surface, High Resistivity Si or diamond.
Electrode dielectric layer and substrate insulating layer use highly heat-conductive material.
It is another object of the present invention to provide a kind of preparation methods of big injection upside-down mounting micron LED chip.
The preparation method of big injection upside-down mounting micron LED chip of the invention, comprising the following steps:
1) size and number of the luminous table top of micron of array arrangement in micron LED chip are determined according to power requirement, and
Design the mode of the array arrangement of the luminous table top of micron and the structure of N-type electrode and p-type transparent electrode；
2) growth substrates are provided, grow N-type GaN layer in growth substrates；
3) successively grown quantum trap and p-type GaN layer in N-type GaN layer, to form epitaxial wafer；
4) it sputters in extension on piece or the material of transparent electrode is deposited, to form p-type transparent electrode；
5) micron for being lithographically formed array arrangement shines mesa pattern, by wet process and dry etching p-type transparent electrode and
Epitaxial wafer is to part N-type GaN layer, and the table top so that the micron for forming array arrangement in remaining part N-type GaN layer shines is micro-
Meter Fa Guang table top successively includes part N-type GaN layer, Quantum Well, p-type GaN layer and p-type transparent electrode from bottom to up；
6) material for depositing N-type electrode, shines in micron and forms circular N-type electrode around table top, N-type electrode with it is micro-
It is not contacted between meter Fa Guang table top；
7) the depositing electrode insulating layer between N-type electrode and the luminous table top of micron；
8) it shines in micron and reflective layer is deposited on table top, while in the surface evaporation metal screed-coat of N-type electrode, metal is looked for
The surface of leveling and the surface of electrode dielectric layer and reflective layer are in approximately the same plane；
9) it is lithographically formed N-type welding disk pattern and p-type welding disk pattern, the deposited n-type pad on metal screed-coat, while in P
P-type pad is deposited in type transparent electrode；
10) attenuated polishing back side growth substrates form LED chip；
11) the deposition substrate insulating layer on substrate；
12) corresponding with the N-type pad and p-type pad being formed on epitaxial wafer respectively, N weldering is deposited on substrate insulating layer
The P pad of disk and array arrangement；
13) the electrode current extension of a plurality of each P pad of connection is formed between the array of the P pad on substrate insulating layer
Line；
14) the edge surface deposited n-type electrode current bus and P-type electrode electricity of substrate insulating layer are not formed on substrate
Flow bus；
15) N pad is connected to N-type electrode current bus, and a plurality of electrode current extension line is connected to P-type electrode electricity
Bus is flowed, heat-radiating substrate is formed；
16) the N pad of heat-radiating substrate is directed to eutectic welding with the N-type pad of LED chip, while by the P of heat-radiating substrate
Pad is directed at eutectic welding with the p-type pad of LED chip, and N-type electrode current bus and P-type electrode current bus are connected respectively
It is connected to external circuit, realizes the preparation of big injection upside-down mounting micron LED chip.
Wherein, in step 1), the surface shape of the luminous table top of micron is circle, the diameter on the surface of the luminous table top of micron
It is 5~200 μm；The number of the luminous table top of the micron of array arrangement is 2~1000.
In step 6), the height of the N-type electrode of vapor deposition is equal with the luminous height of table top of micron, in conjunction with step 8) and 9)
The metal screed-coat and N-type pad and p-type pad of middle vapor deposition realize the uniform height of N-type pad and p-type pad.
In step 11), diamond thin is deposited using the method for sputtering AlN or CVD in substrate insulating layer.
In step 16), the eutectic that P pad is aligned with p-type pad is welded as independent welding.
Advantages of the present invention:
The present invention passes through first graphically buries and controls the processes such as electron beam evaporation, photoetching, finally realizes in the chip
Inverted structure in parallel, so that big Injection Current uniformly expands to each LED terminal in array, then by chip and thermal-conductivity substrate
Eutectic welding is carried out, the heat dissipation performance of high-power die is greatly promoted；Meanwhile the structure of p-type transparent electrode and N-type electrode being set
Microwave transmission performance is considered on meter, is easily used to visible light communication；The present invention has following advantages:
A) bus adds pectinate texture to solve the extension homogeneity question of the electric current in p-type transparent electrode；
B) around the large area N-type electrode of mode, solve the problems, such as that the current flow uniformity in N-type electrode and heat dissipation are asked
Topic；
C) eutectic welding manner is used between LED chip and heat-radiating substrate, solves dissipating from LED chip to heat-radiating substrate
Heat problem improves the process controllability welded between substrate and chip in welding process；
D) inside LED chip, coplanar waveguide structure is designed between p-type transparent electrode and N-type electrode, to improve visible
The bandwidth of optic communication.
Detailed description of the invention
Fig. 1 is the sectional view of one embodiment of big injection upside-down mounting micron LED chip of the invention；
Fig. 2 is that the part of the luminous table top of micron of one embodiment of big injection upside-down mounting micron LED chip of the invention is put
Heavy gauge figure；
Fig. 3 is the top perspective of the individual unit of one embodiment of big injection upside-down mounting micron LED chip of the invention；
Fig. 4 is the luminous table top of micron and N-type electrode of one embodiment of big injection upside-down mounting micron LED chip of the invention
Combined top view.
Specific embodiment
With reference to the accompanying drawing, by specific embodiment, the present invention is further explained.
As shown in Figure 1, the big injection upside-down mounting micron LED chip of the present embodiment include: growth substrates 1, it is N-type GaN layer 2, micro-
Meter Fa Guang table top 3, N-type electrode 4, reflective layer 5, metal screed-coat 501, N-type pad 601, p-type pad 602, N pad 611 and P
Pad 612, N-type electrode current bus 621, P-type electrode current bus 622, electrode dielectric layer 701, substrate insulating layer 702, base
Plate 8；Wherein, N-type GaN layer 2 is formed in growth substrates 1；Successively grown quantum trap and p-type GaN layer in N-type GaN layer 2, and
P-type transparent electrode is formed, to form epitaxial wafer；P-type transparent electrode and epitaxial wafer are etched to part N-type GaN layer 2, thus
The luminous table top 3 of micron of array arrangement is formed in remaining part N-type GaN layer 2, the luminous table top 3 of micron successively wraps from bottom to up
Part N-type GaN layer 301, Quantum Well 302, p-type GaN layer 303 and p-type transparent electrode 304 are included, as shown in Figure 2；It shines in micron
Circular N-type electrode 4 is formed around table top 3, is not contacted between N-type electrode 4 and the luminous table top 3 of micron, the table of N-type electrode 4
Face and the surface of p-type transparent electrode 304 are in approximately the same plane；In the p-type transparent electrode of N-type electrode 4 and the luminous table top 3 of micron
Electrode dielectric layer 701 is filled between 304；It shines in micron and forms reflective layer 5 on table top 3；Gold is formed on the surface of N-type electrode 4
Belong to the surface of screed-coat 501, the surface of metal screed-coat 501 and electrode dielectric layer 701 and reflective layer 5 in approximately the same plane；?
It is connected to form N-type pad 601 on the metal screed-coat 501 of N-type electrode 4；P-type pad is formed in p-type transparent electrode 304
602；Substrate insulating layer 702 is formed on the substrate 8；Respectively with 602 phase of N-type pad 601 and p-type pad that is formed on epitaxial wafer
It is corresponding, the P pad 612 of N pad 611 and array arrangement, the P pad on substrate insulating layer are formed on substrate insulating layer 702
Array between the electrode current extension line 620 of each P pad of a plurality of connection is set；Substrate insulation is not formed on the substrate 8
The edge surface of layer 702 forms N-type electrode current bus 621 and P-type electrode current bus 622；N pad 611 is connected to N-type electricity
Electrode current bus 621, a plurality of electrode current extension line 620 are connected to P-type electrode current bus 622, form pectinate texture；N weldering
Disk 611 is directed at welding with N-type pad 601, and P pad 612 is directed at welding with p-type pad 602；N-type electrode current bus 621
It is respectively connected to external circuit with P-type electrode current bus 622, as shown in Figure 4.
The top perspective of individual unit is as shown in Figure 3.
The preparation method of the big injection upside-down mounting micron LED chip of the present embodiment, comprising the following steps:
1) size and number of the luminous table top 3 of micron of array arrangement in micron LED chip are determined according to power requirement, it is single
The diameter on the surface of the luminous table top 3 of a micron is 5~200 μm；The number of the luminous table top 3 of the micron of array arrangement is 2~1000,
Then by analogue simulation heat distribution, current distribution and high-frequency signal feed-in situation, according to simulation effect, design micron shines
The mode of the array arrangement of table top 3 and the structure of N-type electrode 4 and p-type transparent electrode 304；
2) sapphire or GaN substrate are provided as growth substrates 1, grows N-type GaN layer 2 in growth substrates 1；
3) successively grown quantum trap and p-type GaN layer in N-type GaN layer 2, to form epitaxial wafer；
4) will through overpickling, organic washing, deionized water rinse to surface without contamination, non-oxidation layer and dry after, vapor deposition
One layer of ito film is as p-type transparent electrode 304；
5) sol evenning machine coating photoresist, the luminous table top 3 of micron that array arrangement is formed by exposure, development, baking, post bake
Pattern removes ito film by wet etching in figure expose portion, then dry etching epitaxial wafer to part N-type GaN layer 2, from
And in remaining part N-type GaN layer 2 formed array arrangement micron shine table top 3, micron shine table top 3 from bottom to up according to
It is secondary include part N-type GaN layer 301, Quantum Well 302, p-type GaN layer 303 and p-type transparent electrode 304, as shown in Figure 2；
6) gluing is formed solidification glue locality protection area and is sent out slightly larger than micron by exposure, development, baking again after removing photoresist
Light table face 3 deposits the material C r/Pt/Au of N-type electrode 4, the flush on surface and p-type transparent electrode 304, stripping photoresist
The circular N-type electrode 4 of large area is formed afterwards, is not contacted between N-type electrode 4 and the luminous table top 3 of micron；
7) utilize chemical vapor deposition AlN film, then on AlN use sol evenning machine coating photoresist, by exposure, development,
P-type transparent electrode 304 and N-type electrode 4 are protected in baking respectively, are dimensioned slightly smaller than corresponding electrode, form annular array hollow out figure
Shape；The region of photoresist that wet etching is unglazed protection, forms AlN electrode dielectric layer 701；Remove photoresist；
8) sol evenning machine coating photoresist forms 701 protection zone of electrode dielectric layer, micro- by exposure, development, baking
Vapor deposition reflective layer 5 on meter Fa Guang table top 3, structure Ni/Ag/Ni/Cr/Pt/Au, while in the surface evaporation metal of N-type electrode 4
The surface of screed-coat 501, the surface of metal screed-coat 501 and electrode dielectric layer 701 and reflective layer 5 is in approximately the same plane, then
Stripping photoresist；
9) sol evenning machine coating photoresist forms 601 figure of N-type pad using pad reticle by exposure, development, baking
602 pattern of case and p-type pad, 602 pattern of p-type pad are slightly larger than p-type transparent electrode 304, and 601 pattern of N-type pad is slightly less than N-type
Electrode 4 deposits AuSn using electron beam evaporation, after stripping photoresist, the deposited n-type pad 601 on metal screed-coat 501, together
When in p-type transparent electrode 304 deposit p-type pad 602, stripping photoresist；
10) attenuated polishing back side growth substrates 1 form LED chip；
11) depositing Al N forms substrate insulating layer 702 on high resistant silicon substrate；
12) corresponding with the N-type pad 601 and p-type pad 602 being formed on epitaxial wafer respectively, in substrate insulating layer 702
Upper deposition AuSn forms the P pad 612 of N pad 611 and array arrangement；
13) the electrode current extension of a plurality of each P pad of connection is formed between the array of the P pad on substrate insulating layer
Line 620；
14) the edge surface deposited n-type electrode current bus 621 and P of substrate insulating layer 702 are not formed on the substrate 8
Type electrode current bus 622；
15) N pad 611 is connected to N-type electrode current bus 621, and by the electrode current of a plurality of each P pad of connection
Extension line 620 is connected to P-type electrode current bus 622, forms heat-radiating substrate 8；
16) the N pad 611 of heat-radiating substrate 8 is directed to eutectic welding with the N-type pad 601 of LED chip, while will heat dissipation
The P pad 612 of substrate 8 is directed at eutectic welding with the p-type pad 602 of LED chip, and by N-type electrode current bus 621 and p-type
Electrode current bus 622 is respectively connected to external circuit, realizes the preparation of big injection upside-down mounting micron LED chip.
It is finally noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but this field
Technical staff be understood that without departing from the spirit and scope of the invention and the appended claims, it is various replacement and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
Subject to the range that sharp claim defines.
Claims (10)
1. a kind of big injection upside-down mounting micron LED chip, which is characterized in that the big injection upside-down mounting micron LED chip includes: growth
The luminous table top of substrate, N-type GaN layer, micron, electrode dielectric layer, N-type electrode, reflective layer, metal screed-coat, N-type pad, p-type weldering
Disk, substrate, substrate insulating layer, N-type electrode current bus, P-type electrode current bus, N pad and P pad；Wherein, it is served as a contrast in growth
N-type GaN layer is formed on bottom；Successively grown quantum trap and p-type GaN layer in N-type GaN layer, and p-type transparent electrode is formed, thus
Form epitaxial wafer；P-type transparent electrode and epitaxial wafer are etched to part N-type GaN layer, thus the shape in remaining part N-type GaN layer
At array arrangement micron shine table top, the micron shine table top from bottom to up successively include part N-type GaN layer, Quantum Well,
P-type GaN layer and p-type transparent electrode；It shines in micron and forms circular N-type electrode around table top, N-type electrode and micron shine
It is not contacted between table top, the surface of N-type electrode and the surface of p-type transparent electrode are in approximately the same plane；It is sent out in N-type electrode and micron
Electrode dielectric layer is filled between the p-type transparent electrode in light table face；It shines in micron and forms reflective layer on table top；In N-type electrode
Surface forms the surface of metal screed-coat, the surface of metal screed-coat and electrode dielectric layer and reflective layer in approximately the same plane；?
It is connected to form N-type pad on the metal screed-coat of N-type electrode；P-type pad is formed in p-type transparent electrode, to form LED
Chip；Substrate insulating layer is formed on substrate；It is corresponding with the N-type pad and p-type pad being formed on epitaxial wafer respectively, in base
N pad and P pad are formed on plate insulating layer；The edge surface that substrate insulating layer is not formed on substrate forms N-type electrode electricity
Flow bus and P-type electrode current bus；The N pad is connected to N-type electrode current bus, and P pad is connected to P-type electrode electric current
Bus；N pad is directed at eutectic welding with N-type pad, and P pad is directed at eutectic welding with p-type pad；The N-type electrode electricity
Stream bus and P-type electrode current bus are respectively connected to external circuit.
2. big injection upside-down mounting micron LED chip as described in claim 1, which is characterized in that the P pad and p-type pad pair
Quasi- eutectic is welded as independent welding.
3. big injection upside-down mounting micron LED chip as described in claim 1, which is characterized in that the table of the luminous table top of the micron
Face shape is circle；Inward flange around the N-type electrode of the luminous table top of micron is also round；The surface shape of p-type transparent electrode
For circle.
4. big injection upside-down mounting micron LED chip as claimed in claim 3, which is characterized in that the table of the luminous table top of the micron
The diameter in face is 5~200 μm；The number of the luminous table top of the micron of array arrangement is 2~1000.
5. big injection upside-down mounting micron LED chip as described in claim 1, which is characterized in that the N-type electrode is interconnected at LED
It is realized on chip；P-type transparent electrode is interconnected on substrate and realizes.
6. big injection upside-down mounting micron LED chip as described in claim 1, which is characterized in that the electrode dielectric layer and substrate
Insulating layer uses highly heat-conductive material.
7. a kind of preparation method of big injection upside-down mounting micron LED chip, which is characterized in that the preparation method includes following step
It is rapid:
1) size and number of the luminous table top of micron of array arrangement in micron LED chip are determined according to power requirement, and are designed
The mode of the array arrangement of the luminous table top of micron and the structure of N-type electrode and p-type transparent electrode；
2) growth substrates are provided, grow N-type GaN layer in growth substrates；
3) successively grown quantum trap and p-type GaN layer in N-type GaN layer, to form epitaxial wafer；
4) it sputters in extension on piece or the material of transparent electrode is deposited, to form p-type transparent electrode；
5) it is lithographically formed the luminous mesa pattern of micron of array arrangement, passes through wet process and dry etching p-type transparent electrode and extension
Piece is to part N-type GaN layer, the table top so that micron for forming array arrangement in remaining part N-type GaN layer shines, micron hair
Light table face successively includes part N-type GaN layer, Quantum Well, p-type GaN layer and p-type transparent electrode from bottom to up；
6) material for depositing N-type electrode, shines in micron and forms circular N-type electrode around table top, and N-type electrode and micron are sent out
Light table does not contact between face；
7) the depositing electrode insulating layer between N-type electrode and the luminous table top of micron；
8) it shines in micron and reflective layer is deposited on table top, while in the surface evaporation metal screed-coat of N-type electrode, metal screed-coat
Surface and electrode dielectric layer and reflective layer surface in approximately the same plane；
9) it is lithographically formed N-type welding disk pattern and p-type welding disk pattern, the deposited n-type pad on metal screed-coat, and meanwhile it is saturating in p-type
P-type pad is deposited on prescribed electrode；
10) attenuated polishing back side growth substrates form LED chip；
11) the deposition substrate insulating layer on substrate；
12) corresponding with the N-type pad and p-type pad being formed on epitaxial wafer respectively, on substrate insulating layer deposit N pad and
The P pad of array arrangement；
13) the electrode current extension line of a plurality of each P pad of connection is formed between the array of the P pad on substrate insulating layer；
14) edge surface deposited n-type electrode current bus and the P-type electrode electric current that substrate insulating layer is not formed on substrate are total
Line；
15) N pad is connected to N-type electrode current bus, and it is total that a plurality of electrode current extension line is connected to P-type electrode electric current
Line forms heat-radiating substrate；
16) the N pad of heat-radiating substrate is directed to eutectic welding with the N-type pad of LED chip, while by the P pad of heat-radiating substrate
It is directed at eutectic welding with the p-type pad of LED chip, and N-type electrode current bus and P-type electrode current bus are respectively connected to
External circuit realizes the preparation of big injection upside-down mounting micron LED chip.
8. preparation method as claimed in claim 7, which is characterized in that in step 6), the height of the N-type electrode of vapor deposition with it is micro-
The height of meter Fa Guang table top is equal, in conjunction with step 8) and 9) in the metal screed-coat and N-type pad and p-type pad that are deposited, reality
The uniform height of existing N-type pad and p-type pad.
9. preparation method as claimed in claim 7, which is characterized in that in step 11), substrate insulating layer is using sputtering AlN
Or diamond thin is deposited in the method for CVD.
10. preparation method as claimed in claim 7, which is characterized in that in step 16), P pad is aligned with p-type pad
Eutectic is welded as independent welding.
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