CN109461753B - Large-injection flip micron LED chip and preparation method thereof - Google Patents
Large-injection flip micron LED chip and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a large injection flip micron LED chip and a preparation method thereof. According to the invention, firstly, the processes of graphical burying and control of electron beam evaporation, photoetching and the like are carried out, and finally, a parallel inverted structure is realized in the chip, so that large injection current is uniformly expanded to each LED terminal in the array, and then the chip is welded with the heat-conducting substrate, so that the heat dissipation performance of the high-power chip is greatly improved; the bus and comb structure solves the problem of the current expansion uniformity on the P-type transparent electrode; the large-area N-type electrode in the surrounding mode solves the problems of current uniformity and heat dissipation; an eutectic welding mode is adopted between the LED chip and the heat dissipation substrate, so that heat is dissipated, and the process controllability of welding between the substrate and the chip in the welding process is improved; the P-type transparent electrode and the N-type electrode are designed into a coplanar waveguide structure so as to improve the bandwidth of the micron LED chip in visible light communication.
Description
Technical Field
The invention relates to a visible light communication LED technology, in particular to a large injection flip micron LED chip and a preparation method thereof.
Background
In recent years, LEDs have gradually become the main light source for indoor lighting. And because the LED has the characteristics of higher efficiency and longer service life, the LED has strong application requirements in the fields of backlight illumination, full-color display, biomedical treatment and the like except in the field of indoor illumination. Especially, after the communication function (Li-Fi) is loaded on the LED lamp, the LED has wider application prospect. Compared with the traditional broadband access technology, the Li-Fi has the advantages of high data transmission rate, high positioning precision, strong confidentiality, no electromagnetic interference, no need of radio frequency spectrum authentication and the like, and is an ideal short-distance wireless access/positioning scheme in special occasions such as sensitivity to electromagnetic interference, safety and confidentiality and the like.
However, the 3dB bandwidth of the conventional white LED for illumination is only several MHz to several tens MHz, and the data transmission rate is often up to Gbps by using the techniques of equalization, multi-input/output, multiplexing, and the like. On the one hand, the communication system is complicated and expensive, and on the other hand, the transmission distance of the modulated visible light signals is limited, which limits the practical application of the modulated visible light signals. Various techniques for increasing the bandwidth of LED chips have been proposed by researchers, including micro (micro) LED technology, non-polar/semi-polar LED technology, surface plasmon technology, quantum dot phosphor technology, and the like. Micro LED technology is widely regarded as being compatible with conventional LED chip technology.
The internationally reported 3dB bandwidth of Micro LEDs has reached a level of about 1 GHz. The micro-LED chip mainly utilizes the current uniform spreading characteristic of the micro-LED chip, and the injection current density of the chip reaches more than kA/cm 2. According to the relation between the bandwidth fc and the injection current density J:
wherein B is the radiative recombination coefficient, t is the active region thickness, and q is the electron electric quantity. That is, as the injection current density increases, the bandwidth may increase in a square root relationship. Although the bandwidth may increase monotonically with increasing current density, current spreading and heat dissipation problems for LEDs are also significant as current density increases. Chakraborty et al (appl. phys. lett.88,181120(2006)) uses interdigitated bus technology to solve the current spreading problem of micro LEDs, but the heat dissipation problem is not completely solved. HFSS simulation, a three-dimensional electromagnetic field simulation tool, finds that the geometry of their rectangular pixel cells is also not favorable for feeding high-frequency signals. Guo Shi Yong Shi you (CN201510492225) of south China university utilizes a ring electrode structure to improve the electron hole recombination rate, but the current expansion and heat dissipation under the large injection current density of a chip have great problems.
The flip-chip (flip-chip) welding technology can directly weld the pixel unit and the n electrode on a radiating substrate (submount), so that the LED pixel heating area directly radiates to the substrate, and the radiating efficiency is greatly improved. Meanwhile, interconnection of p and n electrodes of the micro LED array is respectively carried out on the chip and the submount, and the current expansion capability and the flexibility of pixel unit design are further improved.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a large-injection flip micron LED chip and a preparation method thereof for visible light communication.
One object of the present invention is to provide a large implanted flip-chip micro LED chip.
The large injection flip micron LED chip of the invention comprises: the LED substrate comprises a growth substrate, an N-type GaN layer, a micron light-emitting table top, an electrode insulating layer, an N-type electrode, a P-type transparent electrode, a reflecting layer, a metal leveling layer, an N-type bonding pad, a P-type bonding pad, a substrate insulating layer, an N-type electrode current bus, a P-type electrode current bus, an N bonding pad and a P bonding pad; wherein, an N-type GaN layer is formed on a growth substrate; sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer to form an epitaxial wafer, and forming a P-type transparent electrode on the epitaxial wafer; etching the P-type transparent electrode and the epitaxial wafer to part of the N-type GaN layer, thereby forming micron light-emitting table tops which are arranged in an array mode on the rest part of the N-type GaN layer, wherein the micron light-emitting table tops sequentially comprise part of the N-type GaN layer, the quantum well, the P-type GaN layer and the P-type transparent electrode from bottom to top; forming a surrounding N-type electrode around the micron light-emitting table top, wherein the N-type electrode is not in contact with the micron light-emitting table top, and the surface of the N-type electrode and the surface of the P-type transparent electrode are in the same plane; an electrode insulating layer is filled between the N-type electrode and the P-type transparent electrode of the micron light-emitting table top; forming a reflecting layer on the micron luminous table surface; forming a metal leveling layer on the surface of the N-type electrode, wherein the surface of the metal leveling layer is in the same plane with the surfaces of the electrode insulating layer and the light reflecting layer; forming an N-type bonding pad on the metal leveling layer connected with the N-type electrode; forming a P-type pad on the P-type transparent electrode, thereby forming an LED chip; forming a substrate insulating layer on a substrate; forming N bonding pads and P bonding pads arranged in an array on the substrate insulating layer corresponding to the N bonding pads and the P bonding pads formed on the epitaxial wafer respectively, and arranging a plurality of electrode current expansion lines for connecting the P bonding pads between the arrays of the P bonding pads on the substrate insulating layer; forming an N-type electrode current bus and a P-type electrode current bus on the edge surface of the substrate where the substrate insulating layer is not formed; the N bonding pad is connected to the N-type electrode current bus, and the plurality of electrode current expansion lines are connected to the P-type electrode current bus to form a comb-shaped structure; the N bonding pad and the N type bonding pad are aligned to be subjected to eutectic welding, and the P bonding pad and the P type bonding pad are aligned to be subjected to eutectic welding; the N-type electrode current bus and the P-type electrode current bus are respectively connected to an external circuit.
The eutectic solder where the P-pad is aligned with the P-pad is an independent solder.
The interconnection of the N-type electrodes is realized on the LED chip; the interconnection of the P-type transparent electrodes is realized on the substrate.
The growth substrate adopts a sapphire or gallium nitride GaN substrate.
The N-type electrode sequentially comprises a chromium layer, a platinum layer and a gold layer from bottom to top, so that a Cr/Pt/Au electrode is formed.
The surface of the micron light-emitting table top is circular, and the diameter of the surface of the micron light-emitting table top is 5-200 microns; the number of the micron luminous table-boards arranged in an array is 2-1000. The inner edge of the N-type electrode surrounding the micron light-emitting mesa is also circular. The surface shape of the P-type transparent electrode is circular.
The reflecting layer is made of metal material with reflecting property, such as aluminum; the thickness is 1 nm-100 μm.
The substrate is made of high-resistivity and smooth-surface material with good heat conductivity, and high-resistivity silicon or diamond.
The electrode insulating layer and the substrate insulating layer are made of high-heat-conducting materials.
The invention also aims to provide a preparation method of the large-injection flip-chip micron LED chip.
The invention discloses a preparation method of a large injection flip micron LED chip, which comprises the following steps:
1) determining the size and the number of micron light-emitting table tops arranged in an array in a micron LED chip according to the power requirement, and designing the array arrangement mode of the micron light-emitting table tops and the structures of an N-type electrode and a P-type transparent electrode;
2) providing a growth substrate, and growing an N-type GaN layer on the growth substrate;
3) sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer to form an epitaxial wafer;
4) sputtering or evaporating a material of the transparent electrode on the epitaxial wafer to form a P-type transparent electrode;
5) photoetching to form micron light-emitting table surface patterns in array arrangement, and etching the P-type transparent electrode and the epitaxial wafer to part of the N-type GaN layer through a wet method and a dry method so as to form micron light-emitting table surfaces in array arrangement on the rest part of the N-type GaN layer, wherein the micron light-emitting table surfaces sequentially comprise part of the N-type GaN layer, a quantum well, the P-type GaN layer and the P-type transparent electrode from bottom to top;
6) depositing the material of the N-type electrode, forming a surrounding N-type electrode around the micron light-emitting table top, wherein the N-type electrode is not in contact with the micron light-emitting table top;
7) depositing an electrode insulating layer between the N-type electrode and the micron light-emitting table top;
8) a reflecting layer is evaporated on the micron luminous table top, and a metal leveling layer is evaporated on the surface of the N-type electrode, wherein the surface of the metal leveling layer is in the same plane with the surfaces of the electrode insulating layer and the reflecting layer;
9) forming an N-type welding disk pattern and a P-type welding disk pattern by photoetching, depositing an N-type welding disk on the metal leveling layer, and simultaneously depositing a P-type welding disk on the P-type transparent electrode;
10) thinning and polishing the back growth substrate to form an LED chip;
11) depositing a substrate insulating layer on a substrate;
12) depositing an N-type bonding pad and an array-arranged P-type bonding pad on the substrate insulating layer, wherein the N-type bonding pad and the P-type bonding pad are respectively corresponding to the N-type bonding pad and the P-type bonding pad formed on the epitaxial wafer;
13) forming a plurality of electrode current spreading lines connecting the P bonding pads among the array of the P bonding pads on the substrate insulating layer;
14) depositing an N-type electrode current bus and a P-type electrode current bus on the edge surface of the substrate without the substrate insulating layer;
15) connecting the N bonding pad to an N-type electrode current bus, and connecting a plurality of electrode current expansion lines to a P-type electrode current bus to form a heat dissipation substrate;
16) and aligning and eutectic-welding an N bonding pad of the radiating substrate and an N-type bonding pad of the LED chip, aligning and eutectic-welding a P bonding pad of the radiating substrate and a P-type bonding pad of the LED chip, and respectively connecting the N-type electrode current bus and the P-type electrode current bus to an external circuit to realize the preparation of the large injection flip micron LED chip.
In the step 1), the surface of the micron luminous table top is circular, and the diameter of the surface of the micron luminous table top is 5-200 microns; the number of the micron luminous table-boards arranged in an array is 2-1000.
In the step 6), the height of the evaporated N-type electrode is equal to that of the micron light-emitting table top, and the uniform height of the N-type bonding pad and the P-type bonding pad is realized by combining the evaporated metal leveling layer, the N-type bonding pad and the P-type bonding pad in the steps 8) and 9).
In step 11), a diamond film is evaporated on the substrate insulating layer by using a sputtering AlN or CVD method.
In step 16), the eutectic bonding with the P-pad aligned with the P-type pad is an independent bonding.
The invention has the advantages that:
according to the invention, firstly, the processes of graphical burying and control of electron beam evaporation, photoetching and the like are carried out, and finally, a parallel inverted structure is realized in the chip, so that large injection current is uniformly expanded to each LED terminal in the array, and then the chip and the heat-conducting substrate are subjected to eutectic welding, so that the heat dissipation performance of the high-power chip is greatly improved; meanwhile, the microwave transmission performance is considered in the structural design of the P-type transparent electrode and the N-type electrode, so that the transparent electrode is easy to be used for visible light communication; the invention has the following advantages:
a) the bus and comb structure solves the problem of the current expansion uniformity on the P-type transparent electrode;
b) the large-area N-type electrode in the surrounding mode solves the problems of current uniformity and heat dissipation on the N-type electrode;
c) an eutectic welding mode is adopted between the LED chip and the heat dissipation substrate, so that the problem of heat dissipation from the LED chip to the heat dissipation substrate is solved, and the process controllability of welding between the substrate and the chip in the welding process is improved;
d) inside the LED chip, a coplanar waveguide structure is designed between the P-type transparent electrode and the N-type electrode so as to improve the bandwidth of visible light communication.
Drawings
FIG. 1 is a cross-sectional view of one embodiment of a large implanted flip-chip micro LED chip of the present invention;
FIG. 2 is an enlarged partial cross-sectional view of a micron light emitting mesa of one embodiment of a large implanted flip-chip micron LED chip of the present invention;
FIG. 3 is a top perspective view of a single cell of one embodiment of a large implanted flip-chip micro LED chip of the present invention;
fig. 4 is a top view of a micron light emitting mesa in combination with an N-type electrode of one embodiment of a large implanted flip-chip micron LED chip of the present invention.
Detailed Description
The invention will be further elucidated by means of specific embodiments in the following with reference to the drawing.
As shown in fig. 1, the large-injection flip-chip micro LED chip of the present embodiment includes: the LED substrate comprises a growth substrate 1, an N-type GaN layer 2, a micron light-emitting table top 3, an N-type electrode 4, a reflecting layer 5, a metal leveling layer 501, an N-type welding disk 601, a P-type welding disk 602, an N welding disk 611, a P welding disk 612, an N-type electrode current bus 621, a P-type electrode current bus 622, an electrode insulating layer 701, a substrate insulating layer 702 and a substrate 8; wherein an N-type GaN layer 2 is formed on a growth substrate 1; sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer 2, and forming a P-type transparent electrode, thereby forming an epitaxial wafer; etching the P-type transparent electrode and the epitaxial wafer to part of the N-type GaN layer 2, thereby forming micron light-emitting mesas 3 arranged in an array on the remaining part of the N-type GaN layer 2, wherein the micron light-emitting mesas 3 sequentially comprise part of the N-type GaN layer 301, the quantum well 302, the P-type GaN layer 303 and the P-type transparent electrode 304 from bottom to top, as shown in fig. 2; a surrounding N-type electrode 4 is formed around the micron light-emitting table top 3, the N-type electrode 4 is not in contact with the micron light-emitting table top 3, and the surface of the N-type electrode 4 and the surface of the P-type transparent electrode 304 are in the same plane; an electrode insulating layer 701 is filled between the N-type electrode 4 and the P-type transparent electrode 304 of the micron light-emitting table top 3; forming a reflecting layer 5 on the micron luminous table surface 3; forming a metal leveling layer 501 on the surface of the N-type electrode 4, wherein the surface of the metal leveling layer 501, the electrode insulating layer 701 and the surface of the reflecting layer 5 are in the same plane; forming an N-type welding disc 601 on the metal leveling layer 501 connected with the N-type electrode 4; forming a P-type pad 602 on the P-type transparent electrode 304; forming a substrate insulating layer 702 on the substrate 8; forming an N pad 611 and P pads 612 arranged in an array on the substrate insulating layer 702 corresponding to the N pad 601 and the P pad 602 formed on the epitaxial wafer, respectively, and providing a plurality of electrode current spreading lines 620 connecting the respective P pads between the array of P pads on the substrate insulating layer; forming an N-type electrode current bus 621 and a P-type electrode current bus 622 on the edge surface of the substrate 8 where the substrate insulating layer 702 is not formed; the N pad 611 is connected to the N-type electrode current bus 621, and the plurality of electrode current spreading lines 620 are connected to the P-type electrode current bus 622 to form a comb structure; n pad 611 is soldered in alignment with N pad 601 and P pad 612 is soldered in alignment with P pad 602; the N-type electrode current bus 621 and the P-type electrode current bus 622 are connected to external circuits, respectively, as shown in FIG. 4.
A top perspective view of the single unit is shown in fig. 3.
The preparation method of the large injection flip micron LED chip comprises the following steps:
1) determining the size and the number of micron light-emitting table tops 3 arranged in an array in a micron LED chip according to the power requirement, wherein the diameter of the surface of a single micron light-emitting table top 3 is 5-200 microns; the number of the micron light-emitting table tops 3 arranged in an array is 2-1000, and then the heat distribution, the current distribution and the high-frequency signal feed-in condition are simulated, and the array arrangement mode of the micron light-emitting table tops 3 and the structures of the N-type electrode 4 and the P-type transparent electrode 304 are designed according to the simulation effect;
2) providing a sapphire or GaN substrate as a growth substrate 1, and growing an N-type GaN layer 2 on the growth substrate 1;
3) sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer 2 to form an epitaxial wafer;
4) after acid washing, organic cleaning and deionized water washing until the surface is free from contamination and oxide layer and drying, evaporating an ITO film as a P-type transparent electrode 304;
5) coating photoresist on a spin coater, forming a pattern of micron light-emitting table tops 3 arranged in an array by exposing, developing, baking and hardening, removing an ITO film on the exposed part of the pattern by wet etching, and then etching an epitaxial wafer to part of the N-type GaN layer 2 by a dry method, thereby forming the micron light-emitting table tops 3 arranged in an array on the rest part of the N-type GaN layer 2, wherein the micron light-emitting table tops 3 sequentially comprise part of the N-type GaN layer 301, the quantum well 302, the P-type GaN layer 303 and the P-type transparent electrode 304 from bottom to top, as shown in FIG. 2;
6) removing the photoresist, then coating the photoresist again, forming a curing photoresist area protective area slightly larger than the micron light-emitting table top 3 through exposure, development and baking, depositing Cr/Pt/Au material of the N-type electrode 4, wherein the surface of the N-type electrode is flush with the surface of the P-type transparent electrode 304, stripping the photoresist to form the large-area surrounding N-type electrode 4, and the N-type electrode 4 is not in contact with the micron light-emitting table top 3;
7) depositing an AlN film by using a chemical vapor, coating photoresist on AlN by using a spin coater, and respectively protecting the P-type transparent electrode 304 and the N-type electrode 4 by exposure, development and baking, wherein the size of the P-type transparent electrode is slightly smaller than that of the corresponding electrode to form an annular array hollowed-out pattern; etching the area without the protection of the photoresist by a wet method to form an AlN electrode insulating layer 701; removing the photoresist;
8) coating photoresist on a spin coater, forming an electrode insulation layer 701 protection area through exposure, development and baking, evaporating a reflective layer 5 on the micron light-emitting table top 3, wherein the structure is Ni/Ag/Ni/Cr/Pt/Au, simultaneously evaporating a metal leveling layer 501 on the surface of the N-type electrode 4, enabling the surface of the metal leveling layer 501 and the surfaces of the electrode insulation layer 701 and the reflective layer 5 to be in the same plane, and then stripping the photoresist;
9) coating photoresist on a spin coater, forming an N-type pad 601 pattern and a P-type pad 602 pattern by using a pad photoresist mask through exposure, development and baking, wherein the P-type pad 602 pattern is slightly larger than the P-type transparent electrode 304, the N-type pad 601 pattern is slightly smaller than the N-type electrode 4, depositing AuSn by adopting electron beam evaporation, stripping the photoresist, depositing the N-type pad 601 on the metal leveling layer 501, depositing the P-type pad 602 on the P-type transparent electrode 304, and stripping the photoresist;
10) thinning and polishing the back growth substrate 1 to form an LED chip;
11) depositing AlN on a high-resistance silicon substrate to form a substrate insulating layer 702;
12) depositing AuSn on the substrate insulating layer 702 corresponding to the N-type bonding pad 601 and the P-type bonding pad 602 formed on the epitaxial wafer respectively to form an N bonding pad 611 and an array-arranged P bonding pad 612;
13) forming a plurality of electrode current spreading lines 620 connecting the respective P pads between the arrays of P pads on the substrate insulating layer;
14) depositing an N-type electrode current bus 621 and a P-type electrode current bus 622 on the edge surface of the substrate 8 where the substrate insulating layer 702 is not formed;
15) connecting the N-pad 611 to the N-type electrode current bus 621, and connecting a plurality of electrode current spreading lines 620 connecting the respective P-pads to the P-type electrode current bus 622, forming a heat dissipation substrate 8;
16) aligning and eutectic-welding an N bonding pad 611 of the heat dissipation substrate 8 and an N type bonding pad 601 of the LED chip, aligning and eutectic-welding a P bonding pad 612 of the heat dissipation substrate 8 and a P type bonding pad 602 of the LED chip, and respectively connecting an N type electrode current bus 621 and a P type electrode current bus 622 to an external circuit, thereby realizing the preparation of the large injection flip micron LED chip.
Finally, it is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but those skilled in the art will appreciate that: various substitutions and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the embodiments disclosed, but the scope of the invention is defined by the appended claims.
Claims (10)
1. A large-injection flip-chip micro LED chip, comprising: the LED chip comprises a growth substrate, an N-type GaN layer, a micron light-emitting table top, an electrode insulating layer, an N-type electrode, a reflecting layer, a metal leveling layer, an N-type bonding pad, a P-type bonding pad, a substrate insulating layer, an N-type electrode current bus, a P-type electrode current bus, an N bonding pad and a P bonding pad; wherein, an N-type GaN layer is formed on a growth substrate; sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer, and forming a P-type transparent electrode, thereby forming an epitaxial wafer; etching the P-type transparent electrode and the epitaxial wafer to part of the N-type GaN layer, thereby forming micron light-emitting table tops which are arranged in an array mode on the rest part of the N-type GaN layer, wherein the micron light-emitting table tops sequentially comprise part of the N-type GaN layer, a quantum well, the P-type GaN layer and the P-type transparent electrode from bottom to top; forming a surrounding N-type electrode around the micron light-emitting table top, wherein the N-type electrode is not in contact with the micron light-emitting table top, and the surface of the N-type electrode and the surface of the P-type transparent electrode are in the same plane; an electrode insulating layer is filled between the N-type electrode and the P-type transparent electrode of the micron light-emitting table top; forming a reflecting layer on the micron luminous table surface; forming a metal leveling layer on the surface of the N-type electrode, wherein the surface of the metal leveling layer is in the same plane with the surfaces of the electrode insulating layer and the light reflecting layer; forming an N-type bonding pad on the metal leveling layer connected with the N-type electrode; forming a P-type pad on the P-type transparent electrode, thereby forming an LED chip; forming a substrate insulating layer on a substrate; forming an N-pad and a P-pad on the substrate insulating layer corresponding to the N-pad and the P-pad formed on the epitaxial wafer, respectively; forming an N-type electrode current bus and a P-type electrode current bus on the edge surface of the substrate where the substrate insulating layer is not formed; the N bonding pad is connected to the N-type electrode current bus, and the P bonding pad is connected to the P-type electrode current bus; the N bonding pad and the N type bonding pad are aligned to be subjected to eutectic welding, and the P bonding pad and the P type bonding pad are aligned to be subjected to eutectic welding; the N-type electrode current bus and the P-type electrode current bus are respectively connected to an external circuit.
2. The large implant flip micron LED chip of claim 1, wherein the eutectic bond aligned with the P-pad and the P-type pad is a stand-alone bond.
3. The large implanted flip-chip micro LED chip of claim 1, wherein the micro light emitting mesa has a circular surface shape; the inner edge of the N-type electrode surrounding the micron light-emitting table surface is also circular; the surface shape of the P-type transparent electrode is circular.
4. The large-injection flip-chip micro-LED chip of claim 3, wherein the diameter of the surface of the micro-light emitting mesa is 5-200 μm; the number of the micron luminous table-boards arranged in an array is 2-1000.
5. The large-injection flip-chip micro LED chip of claim 1, wherein the N-type electrode interconnections are implemented on the LED chip; the interconnection of the P-type transparent electrodes is realized on the substrate.
6. The large-injection flip-chip micro-LED chip of claim 1, wherein the electrode insulating layer and the substrate insulating layer are made of a high thermal conductivity material.
7. A preparation method of a large injection flip micron LED chip is characterized by comprising the following steps:
1) determining the size and the number of micron light-emitting table tops arranged in an array in a micron LED chip according to the power requirement, and designing the array arrangement mode of the micron light-emitting table tops and the structures of an N-type electrode and a P-type transparent electrode;
2) providing a growth substrate, and growing an N-type GaN layer on the growth substrate;
3) sequentially growing a quantum well and a P-type GaN layer on the N-type GaN layer to form an epitaxial wafer;
4) sputtering or evaporating a material of the transparent electrode on the epitaxial wafer to form a P-type transparent electrode;
5) photoetching to form micron light-emitting table surface patterns in array arrangement, etching the P-type transparent electrode through a wet method, and etching the epitaxial wafer to part of the N-type GaN layer through a dry method, so that micron light-emitting table surfaces in array arrangement are formed on the rest part of the N-type GaN layer, and the micron light-emitting table surfaces sequentially comprise part of the N-type GaN layer, a quantum well, the P-type GaN layer and the P-type transparent electrode from bottom to top;
6) depositing the material of the N-type electrode, forming a surrounding N-type electrode around the micron light-emitting table top, wherein the N-type electrode is not in contact with the micron light-emitting table top;
7) depositing an electrode insulating layer between the N-type electrode and the micron light-emitting table top;
8) a reflecting layer is evaporated on the micron luminous table top, and a metal leveling layer is evaporated on the surface of the N-type electrode, wherein the surface of the metal leveling layer is in the same plane with the surfaces of the electrode insulating layer and the reflecting layer;
9) forming an N-type welding disk pattern and a P-type welding disk pattern by photoetching, depositing an N-type welding disk on the metal leveling layer, and simultaneously depositing a P-type welding disk on the P-type transparent electrode;
10) thinning and polishing the back growth substrate to form an LED chip;
11) depositing a substrate insulating layer on a substrate;
12) depositing an N-type bonding pad and an array-arranged P-type bonding pad on the substrate insulating layer, wherein the N-type bonding pad and the P-type bonding pad are respectively corresponding to the N-type bonding pad and the P-type bonding pad formed on the epitaxial wafer;
13) forming a plurality of electrode current spreading lines connecting the P bonding pads among the array of the P bonding pads on the substrate insulating layer;
14) depositing an N-type electrode current bus and a P-type electrode current bus on the edge surface of the substrate without the substrate insulating layer;
15) connecting the N bonding pad to an N-type electrode current bus, and connecting a plurality of electrode current expansion lines to a P-type electrode current bus to form a heat dissipation substrate;
16) and aligning and eutectic-welding an N bonding pad of the radiating substrate and an N-type bonding pad of the LED chip, aligning and eutectic-welding a P bonding pad of the radiating substrate and a P-type bonding pad of the LED chip, and respectively connecting the N-type electrode current bus and the P-type electrode current bus to an external circuit to realize the preparation of the large injection flip micron LED chip.
8. The method of claim 7, wherein in step 6), the height of the deposited N-type electrode is equal to the height of the micro-emitting mesa, and the uniform height of the N-type pad and the P-type pad is achieved in combination with the metal leveling layer evaporated in steps 8) and 9) and the N-type pad and the P-type pad.
9. The production method according to claim 7, wherein in step 11), the substrate insulating layer is deposited with a diamond film by sputtering AlN or CVD.
10. The method of manufacturing of claim 7, wherein in step 16), the eutectic bonding with the P-pad aligned with the P-type pad is a stand-alone bonding.
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