CN103247741A - LED flip chip and manufacturing method thereof - Google Patents
LED flip chip and manufacturing method thereof Download PDFInfo
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- CN103247741A CN103247741A CN2013101152990A CN201310115299A CN103247741A CN 103247741 A CN103247741 A CN 103247741A CN 2013101152990 A CN2013101152990 A CN 2013101152990A CN 201310115299 A CN201310115299 A CN 201310115299A CN 103247741 A CN103247741 A CN 103247741A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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Abstract
The invention provides an LED (light emitting diode) flip chip which comprises a sapphire substrate, an N-shaped layer, a light emitting layer, a P-shaped layer, a reflecting layer, a first insulating layer, an N bonding pad layer and a P bonding pad layer, wherein the N-shaped layer, the light emitting layer, the P-shaped layer, the reflecting layer and the first insulating layer are arranged on the sapphire substrate in sequence from bottom to up; N leading wire electrodes and P leading wire electrodes are arranged on the first insulating layer; the N leading wire electrodes are conductively connected with the N-shaped layer; the P leading wire electrodes are in conductively connected with the reflecting layer; the N bonding pad layer is conductively connected with the N leading wire electrodes; the P bonding pad layer is conductively connected with the P leading wire electrodes; a second insulating layer is arranged on the N leading wire electrodes and the P leading wire electrodes; through holes are formed in the second insulating layer; and the N bonding pad layer and the P bonding pad layer are in contact with the N leading wire electrodes and the P leading wire electrodes through the through holes respectively. The LED flip chip and the manufacturing method thereof are beneficial to heat radiation of the LED flip chip, enable the LED flip chip to have a favorable insulating effect, and improve the stability of the LED flip chip.
Description
Technical field
The present invention relates to the LED technical field, specifically a kind of LED flip-chip and manufacture method thereof.
Background technology
The structure of traditional formal dress Sapphire Substrate GaN base LED chip as shown in Figure 1, on substrate 101, be provided with N-type GaN layer 2 from the bottom to top successively, quantum well QW active area 3, P type GaN layer 4 and current extending 5 are distributed with P electrode 6, N electrode 7 at current extending 5 and N-type GaN layer.In this structure, P electrode 6 just is positioned at the exiting surface of chip; Simultaneously, fraction P type GaN layer 4 and quantum well QW active area 3 are etched, electrically contact so that N electrode 7 forms with following N-type GaN layer 2.Light takes out from top P type GaN layer 4, and P type GaN layer 4 limited conductivity require to deposit one deck current extending 5 again on its surface.This current extending 5 too thick can absorbent portion light splitting, thereby reduce light extraction efficiency, cross thin can the restriction electric current on the surface of P type GaN layer 4 equal abilities of even dissufion current.
This structural constraint the operating efficiency of led chip, the heat of its PN junction is derived by sapphire substrate 101 and is gone, and thermally conductive pathways is long, and sapphire conductive coefficient is low than metal material, simultaneously the led chip thermal resistance is big, and its P electrode 6 and lead-in wire block part light.The device power of this kind packed LED chip, light extraction efficiency and hot property all are not optimum designs.
In order to solve the problem that above-mentioned traditional packed LED chip exists, industry has been released a kind of flip LED chips, its structure as shown in Figure 2, substrate 71 is positioned at the top of led chip, below substrate 71, be provided with N-type GaN layer 72 successively, quantum well QW active area 73, P type GaN layer 74 and current extending 75 and reflection layer 76; The part of reflection layer 76, current extending 75, P type GaN layer 74, quantum well QW active area 73 and N-type GaN layer 72 is etched, forms N-type GaN layer 72 exposed regions, is provided with N electrode 77 at N-type GaN layer 72 exposed surface; The bottom surface of reflection layer 76 is provided with P electrode 80; N electrode 77 and P electrode 80 is by metal salient point 78,79 and solder layer 81 and thermal conductive substrate 82 welding.
In this structure, light takes out from substrate 71, needn't pass through current-diffusion layer 75 outgoing, and current-diffusion layer 75 can be thickeied like this, increases the current density of led chip.This structure can also directly be led the heat of PN junction to the high thermal conductive substrate 82 of conductive coefficient by metal salient point simultaneously, and radiating effect has greater advantage than the formal dress led chip.
But in this kind structure, the heat that metal salient point 78,79 places concentrate is very big, causes the extreme temperatures of this position.If metal salient point is excessive, chip PN electrode causes the metal salient point adhesion and short circuit easily.When the increase of led chip power, the heat of generation can't timely and effectively shed, and luminous efficiency is descended, the spectral red shift that temperature rise causes chip to reflect, and the colour temperature quality descends, and the LED life-span reduces.
Increase at flip LED chips power, heat radiation is difficult, and the problem that luminous efficiency reduces, industry has also gone out further improvement to the structure of flip LED chips.For example, the patent No. is 200510110474.2 Chinese patent, discloses a kind of high power LED flip-chip and preparation method thereof, and it is the evaporation metal speculum on the silicon substrate of traditional flip LED chips, to improve light extraction efficiency; But it still adopts traditional metal salient point heat conduction, and heat conduction and the stability problem of led chip are not still solved.
See also Fig. 3, simultaneously, in the flip LED chips, the heat that PN junction produces is mainly by metal salient point 78,79 are passed to thermal conductive substrate 82 or the external world, because the thickness of the epitaxial structure of flip-chip has only several microns and be close to the used solder layer 81 of welding, in the process that flip LED chips and heat-conducting substrate 82 is fixing and LED device when under bigger electric current, working, the heat that the heat of welding or led chip work produce can make solder layer 81 fusings, solder layer 81 fusing backs rise to the epitaxial structure from semi-conductive metal salient point, thereby cause the led chip short circuit, cause led chip to lose efficacy.
Summary of the invention
A wherein purpose of the present invention is to provide a kind of LED flip-chip.
Another object of the present invention is to provide the manufacture method of above-mentioned LED flip-chip.
In order to achieve the above object, the present invention has adopted following technical scheme:
A kind of LED flip-chip comprises being provided with N-type layer, luminescent layer, P type layer, reflector, first insulating barrier on Sapphire Substrate, this Sapphire Substrate from bottom to top successively; This first insulating barrier is provided with N lead-in wire electrode and P lead-in wire electrode, and this N lead-in wire electrode extends to the N-type layer from this P type layer along the degree of depth hole is connected with this N-type layer conduction, and this P lead-in wire electrode is connected with this reflector conduction; And, the N pad layer that is connected with this N lead-in wire electrodes conduct, the P pad layer that is connected with this P lead-in wire electrodes conduct, described N lead-in wire electrode and this P lead-in wire electrode are provided with second insulating barrier, this second insulating barrier is provided with through hole, and described N pad layer sees through this through hole with this P pad layer and contacts with this N lead-in wire electrode, this P lead-in wire electrode respectively.
As the preferred technical solution of the present invention: described second insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate;
Perhaps, described first insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate; This second insulating barrier extends to this first insulating barrier along the side of this N lead-in wire electrode and this P lead-in wire electrode, fits with the surface of this first insulating barrier.
Perhaps, second insulating barrier of the described N of being positioned at lead-in wire electrode side extends to this N-type layer along the side of this LED flip-chip, fit with the surface of this N-type layer, second insulating barrier that is positioned at P lead-in wire electrode side extends to this P type layer along the side of this LED flip-chip, fits with the surface of this P type layer.
As the preferred technical solution of the present invention: the through hole on described second insulating barrier evenly distributes around this second insulating barrier.
As the preferred technical solution of the present invention: be provided with the collets that possess reflecting properties between described N pad layer and this P pad layer.
As the preferred technical solution of the present invention: the distance between described N pad layer and P pad layer is greater than 250um.
As the preferred technical solution of the present invention: the ratio of the length and width of described LED flip-chip is greater than 2.5:1.
A kind of manufacture method of LED flip-chip may further comprise the steps:
At first, on Sapphire Substrate, generate N-type layer, luminescent layer, P type layer from bottom to top successively by MOCVD; Then, by surface coverage one reflector of vapour deposition at this P type layer, then this P type layer is carried out photoetching and dry ecthing, form the degree of depth extends to this N-type layer from this P type layer hole; Then, deposit first insulating barrier in the reflector by CVD; Next, this first insulating barrier is carried out dry ecthing, make this N-type layer and this reflector form exposed regions; Afterwards, form N lead-in wire electrode and the P lead-in wire electrode with wiring pattern by vapour deposition and stripping technology at first insulating barrier, this N lead-in wire electrode is connected with this N-type layer conduction, and this P lead-in wire electrode is connected with this reflector conduction; After this, the N pad layer that is connected with this N lead-in wire electrodes conduct and the P pad layer that is connected with this P lead-in wire electrodes conduct are set.
Further comprising the steps of: as have the N lead-in wire electrode and P lead-in wire electrode of wiring pattern in this first insulating barrier formation after, to deposit second insulating barrier by CVD at this N lead-in wire electrode and P lead-in wire electrode, and form through hole by dry ecthing at this second insulating barrier;
Described N pad layer and this P pad layer are arranged on this second insulating barrier, and contact with this N lead-in wire electrode, this P lead-in wire electrode respectively through this through hole.
As the preferred technical solution of the present invention: described second insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate;
Perhaps, described first insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate; This second insulating barrier extends to this first insulating barrier along the side of this N lead-in wire electrode and this P lead-in wire electrode, fits with the surface of this first insulating barrier.
Perhaps, second insulating barrier of the described N of being positioned at lead-in wire electrode side extends to this N-type layer along the side of this LED flip-chip, fits with the surface of this N-type layer; Second insulating barrier that is positioned at P lead-in wire electrode side extends to this P type layer along the side of this LED flip-chip, fits with the surface of this P type layer.
As the preferred technical solution of the present invention: the through hole on described second insulating barrier evenly distributes around this second insulating barrier.
As the preferred technical solution of the present invention: be provided with the collets that possess reflecting properties between described N pad layer and this P pad layer.
Compared with prior art, the present invention is by the design of two layer insulatings, make a plurality of N lead-in wire electrodes and a plurality of P lead-in wire electrode be connected to N pad layer and the P pad layer of monoblock, effectively increase the bonding area of N pad layer and P pad layer, reduced the required precision of the Welding Technology and Equipment of high-power flip-chip; Simultaneously, the increase of solder side is conducive to the heat radiation of LED flip-chip.
And first insulating barrier and second insulating barrier all coat the side that the LED flip-chip exposes, and make led chip have the good insulation performance effect.Even the heat that the heat in welding process or led chip work produce melts solder layer, rise to the epitaxial structure of led chip after the solder layer fusing, can not cause the led chip short circuit yet, improved the stability of led chip greatly.
Description of drawings
Fig. 1 is common forward LED chip structure schematic diagram in the known technology.
Fig. 2 is common flip LED chips structural representation in the known technology.
Fig. 3 is the schematic diagram after the solder layer fusing of flip LED chips shown in Figure 2.
Fig. 4 is the floor map of first embodiment of the invention LED flip-chip.
Fig. 5 is the profile of first embodiment of the invention LED flip-chip.
Fig. 6 is the profile of second embodiment of the invention LED flip-chip.
Fig. 7 is the profile of third embodiment of the invention LED flip-chip.
Fig. 8 is the profile of fourth embodiment of the invention LED flip-chip.
Fig. 9 is the schematic flow sheet of the manufacture method of LED flip-chip of the present invention.
Embodiment
See also Fig. 4 and Fig. 5, the LED flip-chip comprises Sapphire Substrate 1, is successively set on and is provided with N-type layer 11, luminescent layer 12, P type layer 13, reflector 15, first insulating barrier 16 on this Sapphire Substrate 1 from bottom to top successively from bottom to top.This first insulating barrier 16 is provided with N lead-in wire electrode 17 and P lead-in wire electrode 18, this N lead-in wire electrode 17 sees also Fig. 9 along the degree of depth from the hole 14(that this P type layer 13 extends to N-type layer 11) be connected with these N-type layer 11 conductions, this P lead-in wire electrode 18 is connected with these reflector 15 conductions.Described N lead-in wire electrode 17 is provided with second insulating barrier 22 with this P lead-in wire electrode 18, and this second insulating barrier 22 is provided with through hole 28.N pad layer 26 is separately positioned on this second insulating barrier 22 with P pad layer 27, and sees through through hole 28 and contact with N lead-in wire electrode 17, P lead-in wire electrode 18 respectively and form conduction and be connected.
Wherein, Sapphire Substrate 1 can be peeled off in flip-chip, for example, and the thin-film flip-chip (TFFC) that adopts laser lift-off to make.
In N-type layer 11, luminescent layer 12 and the P type layer 13 each all can have conventional known structure arbitrarily.N-type layer 11 for example can have, the structure that N-type contact layer, ESD layer and N coating deposit successively.Luminescent layer 12 for example can have, the MQW' structure of INGaN trap layer and GaN barrier layer alternating deposit.P type layer 13 for example can have, the structure that P coating and P contact layer deposit successively.
Be provided with N lead-in wire electrode 17 and P lead-in wire electrode 18 at first insulating barrier 16, this N lead-in wire electrode 17 and this P lead-in wire electrode 18 form and are similar to the shape that two combs are fitted to each other at certain intervals in the plane; Simultaneously, the through hole 28 on second insulating barrier 22 evenly distributes around this second insulating barrier 28, with the uniformity of the current density that improves flip-chip.Wherein, through hole 28 can be circular port, square hole or be other shape.
The N pad layer 26 that is arranged on second insulating barrier 22 can adopt Ti, Ni, Au, AuSn, Au to form with P pad layer 27.More excellent, for guaranteeing can not form short circuit between N pad layer 26 and the P pad layer 27, distance A is greater than 250um between N pad layer 26 and the P pad layer 27, can be provided with the collets 29 that possess reflecting properties between N pad layer 26 and the P pad layer 27, avoiding short circuit phenomenon occurring between N pad layer 26 and the P pad layer 27, and improve the light extraction efficiency of chip.
Do not form short circuit between the pad layer in order to satisfy better, the ratio of the length and width of LED flip-chip is greater than 2.5:1.For example length is the LED flip-chip of 1500um, and its width then is less than 600um.
Simultaneously, for improving the electric conductivity that is connected in N lead-in wire electrode 17, P lead-in wire electrode 18 and N-type layer 11, reflector 15, in hole 14, reach reflector 15 and be respectively equipped with N target 24, P target 25; Be connected by N target 24 between N lead-in wire electrode 17 and this N-type layer 11, go between 15 in electrode 18 and this reflector of this P is connected by P target 25.
Design by two layer insulatings, make a plurality of N lead-in wire electrodes 17 and a plurality of P lead-in wire electrode 18 be connected to N pad layer 26 and the P pad layer 27 of monoblock, effectively increase the bonding area of N pad layer 26 and P pad layer 27, reduced the required precision of the Welding Technology and Equipment of high-power flip-chip; Simultaneously, the increase of solder side is conducive to the heat radiation of LED flip-chip.
See also Fig. 6, Fig. 7, Fig. 8, for further improving the insulation property of LED flip-chip, described second insulating barrier 22 extends to this Sapphire Substrate 1 along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate 1.
Perhaps, described first insulating barrier 16 extends to this Sapphire Substrate 1 along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate 1; This second insulating barrier 22 extends to this first insulating barrier 16 along the side of this N lead-in wire electrode 17 and this P lead-in wire electrode 18, fits with the surface of this first insulating barrier 16.
Perhaps, second insulating barrier 22 of the described N of being positioned at lead-in wire electrode 17 sides extends to this N-type layer 11 along the side of this LED flip-chip, fit with the surface of this N-type layer 11, second insulating barrier 22 that is positioned at P lead-in wire electrode 18 sides extends to this P type layer 13 along the side of this LED flip-chip, fits with the surface of this P type layer 13.
Adopt this kind structure, first insulating barrier 16 and second insulating barrier 22 all coat the side that the LED flip-chip exposes, and make led chip have the good insulation performance effect.Even the heat that the heat in welding process or led chip work produce melts solder layer, rise to the epitaxial structure of led chip after the solder layer fusing, can not cause the led chip short circuit yet, improved the stability of led chip greatly.
See also Fig. 9, the manufacture method of above-mentioned LED flip-chip may further comprise the steps:
At first, on Sapphire Substrate 1, generate N-type layer 11, luminescent layer 12, P type layer 13 from bottom to top successively by MOCVD (Metal-organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition).The used unstrpped gas of MOCVD is as follows: as the TMG (trimethyl is sowed) in Ga source, as the TMI (trimethyl is pluged with molten metal) in IN source, as the TMA (trimethyl aluminium) in Al source, as the ammonia of nitrogenous source, as the silane of N-type impurity gas, as the cyclopentadienyl group magnesium of P type impurity gas and as hydrogen or the nitrogen of carrier gas.
Then, reserve in the surface coverage one reflector 15(of this P type layer 13 14 zones that expose N-type layers 11 of need punching by vapour deposition, do not need deposition of reflective layer 15), then P type layer 13 is carried out photoetching and dry ecthing, form the degree of depth extends to this N-type layer 11 from P type layer 13 hole 14.
Then, by CVD(Chemical Vapor Deposition, chemical vapour deposition (CVD)) 15 depositions, first insulating barrier 16 in the reflector; Next, this first insulating barrier 16 is carried out dry ecthing, make the bottom in this hole 14 and this reflector 15 form exposed regions respectively.
Afterwards, form N lead-in wire electrode 17 and the P lead-in wire electrode 18 with wiring pattern at first insulating barrier 16 by vapour deposition and stripping technology.N lead-in wire electrode 17 is connected with these N-type layer 11 conductions; This P lead-in wire electrode 18 forms conduction with this reflector 15,13 on this P type layer and is connected.
Then, deposit second insulating barrier 22 by CVD at this N lead-in wire electrode 17 and P lead-in wire electrode 18, and form through holes 28 by dry ecthing at this second insulating barrier 22.More excellent, through hole 28 evenly distributes around second insulating barrier 22.
At last, N pad layer 26 and P pad layer 27 are arranged on this second insulating barrier 22, N pad layer 26 contacts with N lead-in wire electrode 17, P lead-in wire electrode 18 respectively with the through hole 28 that P pad layer 27 sees through on second insulating barrier 22.
More excellent, can between N pad layer 26 and P pad layer 27, be packed into the insulating material that possesses reflecting properties, avoiding short circuit phenomenon occurring between N pad layer 26 and the P pad layer 27, and improve the light extraction efficiency of chip.
Simultaneously, in the manufacture method of above-mentioned LED flip-chip, N target 24(can be set respectively on the bottom in described hole 14 and the reflector 15 see also Fig. 5) see also Fig. 5 with P target 25().Can be connected by this N target 24 between N lead-in wire electrode 17 and the N-type layer 11, the P electrode 18 that goes between can be connected by the P target with 15 in this reflector.This kind mode can improve the electric conductivity that is connected in N lead-in wire electrode 17, P lead-in wire electrode 18 and N-type layer 11, reflector 15.
The above is preferred embodiment of the present invention only, is not to limit practical range of the present invention; Every equivalence of doing according to the present invention changes and revises, and is all covered by the scope of claims of the present invention.
Claims (10)
1. a LED flip-chip comprises being provided with N-type layer, luminescent layer, P type layer, reflector, first insulating barrier on Sapphire Substrate, this Sapphire Substrate from bottom to top successively; This first insulating barrier is provided with N lead-in wire electrode and P lead-in wire electrode, and this N lead-in wire electrode extends to the N-type layer from this P type layer along the degree of depth hole is connected with this N-type layer conduction, and this P lead-in wire electrode is connected with this reflector conduction; And, the N pad layer that is connected with this N lead-in wire electrodes conduct, the P pad layer that is connected with this P lead-in wire electrodes conduct, it is characterized in that: described N lead-in wire electrode and this P lead-in wire electrode are provided with second insulating barrier, this second insulating barrier is provided with through hole, and described N pad layer sees through this through hole with this P pad layer and contacts with this N lead-in wire electrode, this P lead-in wire electrode respectively.
2. a kind of LED flip-chip according to claim 1 is characterized in that:
Described second insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate;
Perhaps, described first insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate; This second insulating barrier extends to this first insulating barrier along the side of this N lead-in wire electrode and this P lead-in wire electrode, fits with the surface of this first insulating barrier.
Perhaps, second insulating barrier of the described N of being positioned at lead-in wire electrode side extends to this N-type layer along the side of this LED flip-chip, fit with the surface of this N-type layer, second insulating barrier that is positioned at P lead-in wire electrode side extends to this P type layer along the side of this LED flip-chip, fits with the surface of this P type layer.
3. a kind of LED flip-chip according to claim 1 is characterized in that: the through hole on described second insulating barrier evenly distributes around this second insulating barrier.
4. a kind of LED flip-chip according to claim 1 is characterized in that: be provided with the collets that possess reflecting properties between described N pad layer and this P pad layer.
5. according to claim 1 or 4 described a kind of LED flip-chips, it is characterized in that: the distance between described N pad layer and P pad layer is greater than 250um.
6. a kind of LED flip-chip according to claim 1, it is characterized in that: the ratio of the length and width of described LED flip-chip is greater than 2.5:1.
7. the manufacture method of a LED flip-chip may further comprise the steps:
At first, on Sapphire Substrate, generate N-type layer, luminescent layer, P type layer from bottom to top successively by MOCVD; Then, by surface coverage one reflector of vapour deposition at this P type layer, after this this P type layer is carried out photoetching and dry ecthing, form the degree of depth extends to this N-type layer from this P type layer hole; Then, deposit first insulating barrier in the reflector by CVD; Next, this first insulating barrier is carried out dry ecthing, make this N-type layer and this reflector form exposed regions; Afterwards, form N lead-in wire electrode and the P lead-in wire electrode with wiring pattern by vapour deposition and stripping technology at first insulating barrier, this N lead-in wire electrode is connected with this N-type layer conduction, and this P lead-in wire electrode is connected with this reflector conduction; After this, the N pad layer that is connected with this N lead-in wire electrodes conduct and the P pad layer that is connected with this P lead-in wire electrodes conduct are set;
It is characterized in that, further comprising the steps of: have the N lead-in wire electrode and P lead-in wire electrode of wiring pattern in this first insulating barrier formation after, deposit second insulating barrier by CVD at this N lead-in wire electrode and P lead-in wire electrode, and form through hole by dry ecthing at this second insulating barrier;
Described N pad layer and this P pad layer are arranged on this second insulating barrier, and contact with this N lead-in wire electrode, this P lead-in wire electrode respectively through this through hole.
8. the manufacture method of a kind of LED flip-chip according to claim 7 is characterized in that:
Described second insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate;
Perhaps, described first insulating barrier extends to this Sapphire Substrate along the side of this LED flip-chip, fits with the surface of this Sapphire Substrate; This second insulating barrier extends to this first insulating barrier along the side of this N lead-in wire electrode and this P lead-in wire electrode, fits with the surface of this first insulating barrier.
Perhaps, second insulating barrier of the described N of being positioned at lead-in wire electrode side extends to this N-type layer along the side of this LED flip-chip, fits with the surface of this N-type layer; Second insulating barrier that is positioned at P lead-in wire electrode side extends to this P type layer along the side of this LED flip-chip, fits with the surface of this P type layer.
9. the manufacture method of a kind of LED flip-chip according to claim 7 is characterized in that: the through hole on described second insulating barrier evenly distributes around this second insulating barrier.
10. the manufacture method of a kind of LED flip-chip according to claim 7 is characterized in that: be provided with the collets that possess reflecting properties between described N pad layer and this P pad layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762283A (en) * | 2013-12-24 | 2014-04-30 | 大连德豪光电科技有限公司 | LED flip chip |
| CN104681704A (en) * | 2015-01-30 | 2015-06-03 | 大连德豪光电科技有限公司 | Flip LED (Light Emitting Diode) chip and production method thereof |
| CN104733600A (en) * | 2013-12-20 | 2015-06-24 | 晶能光电（江西）有限公司 | Flip LED chip and preparing method thereof |
| CN105765451A (en) * | 2013-09-30 | 2016-07-13 | 首尔半导体（株） | Light source module and backlight unit having same |
| CN106159044A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip structure and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011033516A1 (en) * | 2009-09-20 | 2011-03-24 | Viagan Ltd. | Wafer level packaging of electronic devices |
| CN102104233A (en) * | 2010-12-31 | 2011-06-22 | 华灿光电股份有限公司 | High-reflectivity light-emitting diode chip with vertical structure and preparation method thereof |
| CN102315352A (en) * | 2010-07-08 | 2012-01-11 | 三星Led株式会社 | Light emitting semiconductor device and manufacturing approach thereof |
| CN203250780U (en) * | 2013-04-03 | 2013-10-23 | 大连德豪光电科技有限公司 | LED flip chip |
-
2013
- 2013-04-03 CN CN201310115299.0A patent/CN103247741B/en not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011033516A1 (en) * | 2009-09-20 | 2011-03-24 | Viagan Ltd. | Wafer level packaging of electronic devices |
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| CN106159044A (en) * | 2015-04-01 | 2016-11-23 | 映瑞光电科技(上海)有限公司 | LED chip structure and preparation method thereof |
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