CN104064634A - Production method for high-brightness GaN-based eutectic welding light emitting diodes - Google Patents

Production method for high-brightness GaN-based eutectic welding light emitting diodes Download PDF

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CN104064634A
CN104064634A CN201310096118.4A CN201310096118A CN104064634A CN 104064634 A CN104064634 A CN 104064634A CN 201310096118 A CN201310096118 A CN 201310096118A CN 104064634 A CN104064634 A CN 104064634A
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layer
described
substrate
emitting diode
manufacture method
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CN201310096118.4A
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Inventor
李智勇
齐胜利
郝茂盛
马艳红
陈朋
朱秀山
吕振兴
阮怀权
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上海蓝光科技有限公司
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Publication of CN104064634A publication Critical patent/CN104064634A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46Reflective coating, e.g. dielectric Bragg reflector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0075Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

The invention provides a production method for high-brightness GaN-based eutectic welding light emitting diodes. The production method comprises the following steps of: providing a substrate; growing an LED epitaxial layer on the substrate; etching downwards from a P-type conductive layer, and penetrating the P-type conductive layer and a lighting layer until reaching a certain layer of an N-type conductive layer to form a plurality of conductive holes; forming a conductive thin film layer on the LED epitaxial layer of the structure obtained after the step 3; forming insulating layers on the side walls of the conductive holes and on the conductive thin film layer; forming metal electrode in the conductive holes and on the insulating layers, and separating the metal electrodes to form positive electrodes and negative electrodes, wherein the negative electrodes are in contact with the conductive thin film layer; after thinning the substrate or stripping the substrate by laser, inversely mounting the eutectic welding light emitting diode. According to the production method, the defect of the uprightly mounted LED chip that the sapphire substrate is poor in heat dissipation is solved, the problem that a traditional flip-chip LED chip is complex in technology is overcome, and heat dissipation performance is further greatly improved.

Description

A kind of manufacture method of high brightness GaN-based eutectic weldering light-emitting diode

Technical field

The present invention relates to a kind of preparation technology of light-emitting diode chip for backlight unit, particularly relate to a kind of manufacture method of high brightness GaN-based eutectic weldering light-emitting diode.

Background technology

Light-emitting diode (Light Emitting Diode is called for short LED) is a kind of light emitting semiconductor device, utilizes semiconductor P-N junction electroluminescence principle to make.It is low that LED has energy consumption, and volume is little, the life-span is long, good stability, and response is fast, and the stable photoelectric properties that waited of emission wavelength, have good application in fields such as illumination, household electrical appliances, display screen, indicator lights at present.

Traditional LED device preparation technology is day by day ripe, and thermal resistance is high, light efficiency is low, encapsulation rear electrode lead-in wire stops the poor four problems becoming in industry of luminous, antistatic effect.Face-down bonding technique (traditional flip-chip LED chip structure as shown in figure 14) is that a LED chip and a substrate are combined, the contact conductor of chip is made in below chip and connects together with substrate, substrate link support (or electrically-conductive backing plate) in encapsulation process, the light that LED sends sends from front, contact conductor does not stop light, quantum well layer (MQW) is more pressed close to substrate and is conducive to heat radiation, can alleviate above-mentioned difficult point.But face-down bonding technique needs to add a substrate between chip and package support, and the interpolation preparation of substrate is complicated, and technological difficulties are many, absorb the shortcomings such as light.

Traditional formal dress with cover brilliant GaN base LED device architecture as shown in figure 15, traditional positive assembling structure, because the thickness of sapphire (Sapphire) is up to 150um left and right, has limited the radiating effect of device greatly.Flip chip structure, because the thickness of Si is also more than 150um, has also limited the radiating effect of device.

Summary of the invention

The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of manufacture method of high brightness GaN-based eutectic weldering light-emitting diode, for solving, prior art LED device thermal resistance is high, light efficiency is low, encapsulation rear electrode lead-in wire stops the problem luminous, antistatic effect is poor.

For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of high brightness GaN-based eutectic weldering light-emitting diode, the method comprises the following steps:

1) provide a substrate;

2) at this Grown LED epitaxial loayer, described LED epitaxial loayer at least comprises from bottom to top: N-type conductive layer, luminescent layer and P-type conduction layer;

3) from the downward etching of described P-type conduction layer, run through P-type conduction layer, luminescent layer, until etch into a certain aspect of N-type conductive layer, form some conduction holes;

4) in above-mentioned steps 3) form conductive membrane layer on the LED epitaxial loayer of structure that obtains afterwards;

5) on the sidewall of described conduction hole and conductive membrane layer, form insulating barrier;

6), then in described conduction hole and form metal electrode on insulating barrier and this metal electrode interval is formed to positive electrode and negative electrode, described negative electrode contacts with described conductive membrane layer;

7) after attenuate substrate or laser lift-off substrate, upside-down mounting eutectic welds this light-emitting diode.

The effective shortcoming that solves packed LED chip Sapphire Substrate weak heat-dissipating of the present invention, has solved again tradition and has covered the complex process problem of brilliant LED chip, and further improved greatly heat dispersion.

Brief description of the drawings

Fig. 1 is shown as substrat structure schematic diagram in the embodiment of the present invention one.

Fig. 2 is shown as in the embodiment of the present invention one and utilizes organic metal gas phase deposition technology to go out the structural representation of GaN semiconductor layer at Grown.

Fig. 3 a is shown as the embodiment of the present invention one and utilizes photoetching and lithographic technique to carry out local etching, forms the structural representation of conduction hole.

Fig. 3 b is shown as the vertical view of Fig. 3 a.

Fig. 4 is shown as the embodiment of the present invention one and utilizes coating technique evaporation layer of transparent conductive layer on semiconductor layer, forms the structural representation of transparency conducting layer.

Fig. 5 a is shown as the embodiment of the present invention one and uses the equipment such as ODR on conduction hole and transparency conducting layer, to form the structural representation of high reflection layer.

Fig. 5 b is shown as the vertical view of Fig. 5 a.

Fig. 6 a is shown as the embodiment of the present invention one and utilizes photoetching, evaporation or the stamping technique structural representation at conduction hole and conductive film subregion evaporation metal electrode.

Fig. 6 b is shown as the vertical view of Fig. 6 a.

Fig. 7 is shown as the embodiment of the present invention one and utilizes grinding and polishing technology by the structural representation after wafer substrates attenuate.

Fig. 8 is shown as the embodiment of the present invention one product upside-down mounting eutectic weldering.

Fig. 9 a is shown as the embodiment of the present invention two and uses the structural representation of evaporation coating technique at the high reflecting material film of P-type conduction layer upper surface evaporation one deck conduction.

Fig. 9 b is the vertical view of Fig. 9 a.

Figure 10 a is shown as the embodiment of the present invention two and utilizes the technology such as evaporation, photoetching, covers the structural representation of one deck insulation film on the high reflecting material film surface subregion of conducting electricity and conduction hole sidewall.

Figure 10 b is the vertical view of Figure 10 a.

Figure 11 a is shown as the embodiment of the present invention two and utilizes photoetching, evaporation or the stamping technique structural representation at conduction hole and conductive film subregion evaporation metal electrode.

Figure 11 b is the vertical view of Figure 11 a.

Figure 12 is shown as the embodiment of the present invention two and utilizes grinding and polishing technology by the structural representation after wafer substrates attenuate.

Figure 13 is shown as the structural representation of the embodiment of the present invention two product upside-down mounting eutectic welderings.

Figure 14 is traditional flip-chip LED chip structure schematic diagram.

Figure 15 is traditional formal dress and covers brilliant GaN base LED device architecture schematic diagram.

Element numbers explanation

101,201 substrates

102,202 N-type conductive layers

103,203 luminescent layers

104,204 P-type conduction layers

105 transparent conductive films

106 nonconducting high reflective film layers

1061 first intervals

107,207 metal electrodes

1071,2071 positive electrodes

1072,2072 negative electrodes

200 second intervals

The high reflective film layer of 205 conductions

206 insulation films

100,210 conduction holes

Embodiment

Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.

Refer to accompanying drawing.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, when its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.

A manufacture method for high brightness GaN-based eutectic weldering light-emitting diode, the method comprises the following steps:

1) providing a kind of substrate, can be two substrates of throwing of positive and negative two surperficial printing opacities, can be also single substrate of throwing; This substrate can be PSS graph substrate, can be also flat substrate;

2) at Grown LED epitaxial loayer, at least comprise from bottom to top: N-type conductive layer, luminescent layer, P-type conduction layer.Between described substrate and described N-type conductive layer, can also comprise resilient coating;

3) etching forms conduction hole, and described conduction hole runs through P-type conduction layer, luminescent layer, etches into a certain aspect of N-type conductive layer, exposes N-type conductive layer (for example N-type GaN layer); The number of conduction hole can be the arbitrary integer that is more than or equal to 1, and shape can be triangle, rectangle, circle, polygon etc., and the degree of depth of conduction hole meets bottom link N-type conductive layer, and area can design by technological requirement;

4) utilize photoetching technique, at appointed area growth conductive film (transparency conducting layer), high reflection layer thin layer, form ohmic contact, bonded layer; The material of conductive film can be the conductive film such as ITO, AZO.The material of high reflection layer film can be SiO 2, TiO 2, reasonably combined between Ag, Al etc. or each material;

5) form metal electrode, be isolated into positive electrode and negative electrode; Metal electrode material can be reasonably combined between Cr, Pt, Au, Ti, Al, Sn etc. or each material.Between positive and negative electrode, have a spacer segment (Gap), shape can be rectangle, polygon, parallel curve etc., interval (Gap) inner SiO that fills 2deng insulating material or reserved neutral position.The electrode contacting with N-type conductive layer can not contact with the high reflection layer of conductive film or conduction;

6) attenuate substrate, or laser lift-off substrate; Attenuate substrate can use the operations such as grinding, polishing;

7) upside-down mounting eutectic core wire sheet.

Embodiment mono-

As shown in Figure 1, provide a light-transmissive substrates 101(patterned substrate or flat substrate all can), use as shown in Figure 2 MOCVD technique grown epitaxial layer, bottom-up N-type GaN layer 102, luminescent layer MQW103, the P type GaN layer 104 of once comprising of this epitaxial loayer.Between described substrate and described N-type conductive layer, can also comprise resilient coating (not shown).

Next step, as shown in Fig. 3 a-Fig. 3 b, utilize the technology such as photoetching, etching, and the some conduction holes 100 of etching require etching to run through P type GaN layer 104 and luminescent layer MQW103, until etch into the subregion in N-type GaN layer 102.The conduction pore quantity forming can be for to be more than or equal to any one integer numerical value of 1, and the shape of cross section of etching conductive hole can be the arbitrary shapes such as rectangle, circle, and area can be set by technological requirement.In the present embodiment, accompanying drawing and following explanation are explained by 9 circular conduction holes.

Next step, as shown in Figure 4, utilize the technologies such as plated film (E-beam, sputter etc.), photoetching, corrosion (wet etching or dry etching etc.) to deposit such as ITO/AZO of layer of transparent conductive film 105(etc. at P type GaN layer 104 upper surface), play the effect of evenly distributing electric current.

Next step, as shown in Figure 5 a, utilize the technology such as evaporation (can adopt the equipment such as ODR, PECVD), photoetching, corrosion on the sidewall of these transparent conductive film 105 upper surfaces and described conduction hole 100, to deposit the nonconducting high reflective film layer 106 of one deck, in this high reflective film layer 106, be provided with the first interval 1061, high reflective film layer 106 is divided into independently two parts by it.The effect that this high reflective film layer 106 plays has two, and the effect of first insulating barrier is interconnected and causes leaking electricity between 104 each layer, N-type GaN layer 102 in prevention conduction hole, luminescent layer MQW103, P type GaN layer; It two is high reflection layer effects, the whole as far as possible transmitting of light of inciding flip-chip bottom and conduction hole sidewall can be gone back, and improves light extraction efficiency, has improved to a great extent the external quantum efficiency of chip.The vertical view of the structure obtaining after this step refers to shown in Fig. 5 b.SiO2/TiO2 or W/Ti/Pt composite material etc. that described nonconducting high reflecting material is ODR/DBR evaporation.

Next step, as shown in Fig. 6 a-6b, utilize photoetching, evaporation, peel off or the method such as impression, in described conduction hole 100 and described high reflective film layer 106 upper surface cover one deck Cr/Pt/Au or Au/Sn etc. and have the metal electrode 107 of the good property led.In the present embodiment, described metal electrode 107 adopts the mode at the second interval 200 to be isolated into positive electrode 1071 and negative electrode 1072; In the present embodiment, described negative electrode runs through described the first interval 1061 and contacts with transparent conductive film 105.Metal electrode material can be reasonably combined between Cr, Pt, Au, Ti, Al, Sn etc. or each material.The shape at the second interval (Gap) 200 existing between positive and negative electrode can be rectangle, polygon, parallel curve etc., the inner SiO that fills in described the second interval (Gap) 2deng insulating material or reserved neutral position.The electrode contacting with N-type conductive layer can not contact with the high reflection layer of conductive film or conduction.

Follow-up possible processing direction has laser lift-off substrate or physical grinding substrate to certain thickness (as shown in Figure 7), makes product bright dipping light path short as far as possible.Follow-uply also the surface of N-type GaN layer 1022 or substrate 101 can be carried out to alligatoring or graphical etc., the brightness that improves chip.

Finally, as shown in Figure 8, this flip-chip eutectic weldering.This technology belongs to the common practise of this area, then this repeats no more.

Embodiment bis-

It is identical with embodiment mono-that embodiment bis-forms structure and technique before conductive hole hole, as shown in Fig. 9 a-9b, forms successively N-type GaN layer 202, luminescent layer MQW2032 on substrate 201), P type GaN layer 204.Utilize the technology such as photoetching, etching, the some conduction holes 210 of etching, require etching to run through P type GaN layer 104 and luminescent layer MQW103, until etch into the subregion in N-type GaN layer 102.The conduction pore quantity forming can be for to be more than or equal to any one integer numerical value of 1, and the shape of cross section of etching conductive hole can be the arbitrary shapes such as rectangle, circle, and area can be set by technological requirement.In the present embodiment, accompanying drawing and following explanation are explained by 9 circular conduction holes.

Difference is: as shown in Fig. 9 a, utilize evaporation coating technique at the high reflecting material film 205(of P type GaN layer 204 upper surface evaporation one decks conduction as Ag, Al etc.).The effect that high reflecting material film 205 plays has two: one, and conductive film, can make this layer of equally distributed electric current of injection; Its two, high reflection layer film, by inciding whole as far as possible the reflecting back of light of chip bottom, from chip surface bright dipping, improves light extraction efficiency greatly.

Next step, as shown in Figure 10 a-10b, utilize the technology such as evaporation, photoetching, on the high reflecting material film 205 upper surface part subregions of conducting electricity and conduction hole 210 sidewalls, covers one deck insulation film 206(as SiO 2deng).The effect of described insulation film 206 is to prevent from conducting electricity N-type GaN layer 202 in hole 210, luminescent layer MQW2032), have conductive materials conducting to cause electric leakage between 204 each layers, P type GaN layer, cut off between two electrodes simultaneously and insulate.

Next step, as shown in Figure 11 a-11b, utilize the other technologies such as photoetching, evaporation or impression at conduction hole 210 and high reflecting material film 205(conductive film) subregion evaporation metal electrode 207.In the present embodiment, described metal electrode 207 is spaced apart two parts, forms positive electrode 2071 and negative electrode 2072.Described negative electrode 2071 contacts with the high reflecting material film 205 of conduction.

Follow-up possible processing has laser lift-off substrate or physical grinding substrate to certain thickness (as shown in figure 12), makes product bright dipping light path short as far as possible.Follow-uply also can carry out alligatoring or graphical etc. to the surface of N-type GaN layer 202 or substrate, improve the brightness of chip.Finally, as shown in figure 13, upside-down mounting eutectic weldering.

The present invention, by optimizing the design of upside-down mounting thin film chip (Thin-Film Flip-Chip), makes can throw off linking of substrate between chip and package support (or substrate), and chip direct package is upper at support (or substrate), and preparation simply; By chip direct package, chip light emitting layer (MQW) more approaches the good heat-conducting layer of package support (or substrate), is more conducive to the heat radiation of chip simultaneously.By all can form the omnidirectional reflector (ODR) of high reflectance to each wavelength, incident angle, improve greatly the luminous efficiency of device; On passage of heat, the thickness of ODR only has 0.9um, encapsulation is used the mode of eutectic weldering, directly communicate with the Cu pedestal of encapsulation by the gold-tin alloys of some microns, improve greatly radiating efficiency, effectively improve the thermal characteristics of high power device, thereby effectively improved heat-sinking capability, luminous efficiency and the life-span of LED device.And destroyed device waveguiding effect by porous N electrode etched area, play the characteristic of insulation and high reflection raising device luminous efficiency by ODR simultaneously.

As shown in table 1:

Normal process Invented technology

Chip thermal resistance 10K/W 5K/W Junction temperature of chip 120℃ 100℃ Chip brightness 100lm/W 130lm/W

The gap aspect main that is more than new technology and normal process three of thermal resistances, junction temperature, brightness, can find out, new technology has reduced significantly thermal resistance and junction temperature, significantly promoted luminous efficiency and extended useful life.The present invention is applicable to light emitting semiconductor device manufacture, comprises blue-ray LED, green light LED, ultraviolet LED etc.

In sum, the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.

Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.

Claims (10)

1. a manufacture method for high brightness GaN-based eutectic weldering light-emitting diode, is characterized in that, the method comprises the following steps:
1) provide a substrate;
2) at this Grown LED epitaxial loayer, described LED epitaxial loayer at least comprises from bottom to top: N-type conductive layer, luminescent layer and P-type conduction layer;
3) from the downward etching of described P-type conduction layer, run through P-type conduction layer, luminescent layer, until etch into a certain aspect of N-type conductive layer, form some conduction holes;
4) in above-mentioned steps 3) form conductive membrane layer on the LED epitaxial loayer of structure that obtains afterwards;
5) on the sidewall of described conduction hole and conductive membrane layer, form insulating barrier;
6), then in described conduction hole and form metal electrode on insulating barrier and this metal electrode interval is formed to positive electrode and negative electrode, described negative electrode contacts with described conductive membrane layer;
7) after attenuate substrate or laser lift-off substrate, upside-down mounting eutectic welds this light-emitting diode.
2. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: described conductive membrane layer is the high reflecting material thin layer of transparency conducting layer or conduction.
3. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 2, is characterized in that: the high reflecting material thin layer material of described conduction is Ag or Al.
4. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 2, is characterized in that: when described conductive membrane layer is transparency conducting layer, described insulating barrier is nonconducting high reflecting material thin layer.
5. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 4, is characterized in that: SiO2/TiO2 or W/Ti/Pt composite material that described nonconducting high reflecting material is ODR/DBR evaporation.
6. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: described substrate is that two throwing substrates, the list of positive and negative two surperficial printing opacities thrown any one in substrate, PSS graph substrate or flat substrate.
7. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: the cross section of described conduction hole is triangle, rectangle, circle or polygon.
8. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: the material of described transparency conducting layer is ITO or AZO.
9. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: the material of described metal electrode is Cr, Pt, Au, Ti, Al or Sn.
10. the manufacture method of high brightness GaN-based eutectic weldering light-emitting diode according to claim 1, is characterized in that: between described positive electrode and negative electrode, have a spacer segment, fill insulant or reserved neutral position in described interval.
CN201310096118.4A 2013-03-22 2013-03-22 Production method for high-brightness GaN-based eutectic welding light emitting diodes CN104064634A (en)

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CN103811624A (en) * 2014-02-18 2014-05-21 江苏新广联科技股份有限公司 Encapsulation-free type UVLED (Ultraviolet Light-Emitting Diode) chip
CN104638086A (en) * 2015-03-09 2015-05-20 武汉大学 LED (light-emitting diode) chip of three-dimensional electrode structure with high current density
CN104659178A (en) * 2015-03-09 2015-05-27 武汉大学 Power type three-dimensional LED light-emitting device and manufacturing method thereof
CN104681684A (en) * 2014-12-30 2015-06-03 深圳市华星光电技术有限公司 Light emitting device and light emitting device package
CN104701437A (en) * 2015-03-09 2015-06-10 武汉大学 Three-dimensional LED luminescent device
CN104953002A (en) * 2015-05-06 2015-09-30 江苏汉莱科技有限公司 High-voltage and inverted LED (light emitting diode) chip and manufacturing method thereof
WO2015172733A1 (en) * 2014-05-15 2015-11-19 The Hong Kong University Of Science And Technology Gallium nitride flip-chip light emitting diode
CN105702823A (en) * 2016-04-11 2016-06-22 聚灿光电科技股份有限公司 Small-sized light emitting diode (LED) chip and fabrication method thereof
CN105845803A (en) * 2016-06-07 2016-08-10 合肥彩虹蓝光科技有限公司 Preparation method of high-brightness flip LED chip
CN106169531A (en) * 2016-07-15 2016-11-30 厦门乾照光电股份有限公司 The inverted light-emitting diode (LED) of a kind of ODR structure and preparation method, upside-down mounting high-voltage LED
CN104241511B (en) * 2014-09-25 2017-02-15 西安神光皓瑞光电科技有限公司 Method for manufacturing high-brightness flip ultraviolet LED chips
CN109524526A (en) * 2018-11-19 2019-03-26 华中科技大学鄂州工业技术研究院 Novel deep-UV light-emitting diode chip and preparation method thereof

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CN103811624A (en) * 2014-02-18 2014-05-21 江苏新广联科技股份有限公司 Encapsulation-free type UVLED (Ultraviolet Light-Emitting Diode) chip
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CN109524526A (en) * 2018-11-19 2019-03-26 华中科技大学鄂州工业技术研究院 Novel deep-UV light-emitting diode chip and preparation method thereof

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