CN104347461A - Heat transfer device for LED (Light-Emitting Diode) - Google Patents
Heat transfer device for LED (Light-Emitting Diode) Download PDFInfo
- Publication number
- CN104347461A CN104347461A CN201310340369.2A CN201310340369A CN104347461A CN 104347461 A CN104347461 A CN 104347461A CN 201310340369 A CN201310340369 A CN 201310340369A CN 104347461 A CN104347461 A CN 104347461A
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- Prior art keywords
- light
- emitting diode
- backlight unit
- diode chip
- glue
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention relates to a heat transfer device for an LED (Light-Emitting Diode) and provides a heat transfer device for packaging an LED chip. The heat transfer device comprises a preheating component and a conveying belt, wherein the preheating component is used for preheating the LED chip; the LED chip is coated with a glue; the conveying belt is used for conveying the LED chip to a baking space so as to finish packaging of the LED; before the LED chip is conveyed by the conveying belt, the glue is not solidified.
Description
Technical field
System of the present invention is relevant to a kind of encapsulation procedure of light-emitting diode, is particularly relevant to a kind of packaging plastic in the encapsulation procedure of light-emitting diode and Heat transmission send device.
Background technology
Semi-conductor industry is one of fastest high-technology industry of development in recent years, along with making rapid progress of electronic technology, coming out one after another of high-tech electronic industry, makes electronic product more humane, with better function constantly weed out the old and bring forth the new, and designs towards light, thin, short, little trend.
Light-emitting diode (LED) is a kind of semi-conductor electricity sub-component that can be luminous.This composite light source formed through trivalent and pentad, is merely able to the ruddiness sending low luminosity in early days, and is taken as indicator light utilization.But even to this day, the spectrum that LED can send is throughout the scope of visible ray, infrared ray and ultraviolet light.LED as indicator light and display panel etc., can only develop various lighting apparatus at first in recent years gradually.
LED industry chain generally can be divided into upstream, middle reaches, three, downstream level, wherein: upstream is the production of substrate and epitaxial wafer; Middle reaches are LED chip manufacture; Downstream is that the encapsulation of LED chip and all kinds of LED show, illumination, the production of backlight product and application.If focus on LED downstream industry chain, the part of encapsulation and application can be subdivided into, wherein encapsulation refers to and LED chip is sticked together wire, is fixed, and the shape required for becoming by different material package, such as bulb type, numerical display type, dot matrix type or surface attaching type (SMD) etc.
The production procedure of LED can be divided into the large class of support rack type and flip chip type etc. two.The method for making of general support rack type LED chip is comprise the following steps: (1) some elargol: elargol on polyphtalamide (PPA) support mid point, to stick together chip; (2) die bond: LED chip is put on the elargol of above-mentioned PPA support; (3) thermmohardening baking: harden in order to do making elargol; (4) bonding wire: the LED chip of step (2) is linked upper metal wire, props up with the PPA of LED chip and be configured to electric connection; (5) first paragraph point glue: utilize the perfusion of transparent enclosure resin to be about half place to the PPA support of LED chip, be packaged into the luminous zone, upper strata of LED chip; (6) first paragraph point glue thermmohardening baking: the luminous zone, upper strata of step (5) is dried, or carries out hardening of resin with ultraviolet light; (7) second segment point glue: utilize the heat radiation resin be mixed into by heat radiation powder and potting resin, be packaged into the lower floor radiating area of LED chip; And the baking of (8) second segment point glue thermmohardening: by lower floor's radiating area baking of step (7), or with ultraviolet light photopolymerization.In addition, among the production procedure of flip chip type LED, be broadly divided into: die bond, bonding wire, some glue, baking, cutting, test, sorting and packaging and other steps.
Refer to Fig. 1.Fig. 1 illustrates the packaging system commonly using light-emitting diode.This packaging system comprises LED chip 11, substrate 11S, projection 11B, packaging plastic 10 and encapsulation circle 11C, wherein projection 11B system reflow machine acts on the solder formed between LED chip 11 and substrate 11S, and packaging plastic 10 and encapsulation circle 11C are all for sealing LED chip 11, space between substrate 11S and projection 11B.
The packaging plastic being generally used for LED chip needs to have following characteristic: high light transmittance, high water-permeability, has the non-discoloring characteristic of long-time high temperature, and the rear viscosity of mixing is low, good fluidity, easily froth breaking; Packaging plastic can solidify under middle temperature or hot conditions, and curing rate is fast; And solidification post-shrinkage ratio is little, moisture-proof is good, have good gloss, hardness high; Solidfied material mechanical strength is good, electrical characteristic excellent and need good moisture resistance.
Experiment finds: when light source is under the condition of long-time high temperature, and generation is separated with chip by the some glue originally tightly wrapping up chip, and occurs charing blackout phenomenon, and thus create light decay in various degree, colour temperature is spectrally moved, and is turned cold by warm.When removing colloid Reseal, light intensity recovers normal substantially.The selection of encapsulation glue, except needs consider refractive index, thermal diffusivity, half-life and cost, and need solve in a glue process and occur the distortion of colloid bubble, colloid, bowl bubble, scratch etc. phenomenon.
LED after encapsulation can carry out testing, sorting according to wavelength, luminous intensity, lighting angle and operating voltage etc.Then manually to choose LED and to be divided in different casees (BIN).The result of encapsulation will affect the distribution of BIN widely.
Summary of the invention
The present invention mainly proposes a kind of light-emitting diode (LED) automatic production method, comprises the following steps: to provide plural light-emitting diode chip for backlight unit; The die bond processing procedure of these light-emitting diode chip for backlight unit is carried out by a bonder; The bonding wire processing procedure of these light-emitting diode chip for backlight unit is carried out by a reflow machine; Carry out the encapsulation procedure of these light-emitting diode chip for backlight unit by a point gum machine, wherein this point gum machine comprises a glue and a Heat transmission send device; And carry out the cutting of these light-emitting diode chip for backlight unit, test, sorting and packaging processing procedure.
The present invention proposes again a kind of glue of the encapsulation procedure for a light-emitting diode, heat the condition of five minutes at 120 DEG C under, the change of its viscosity is greater than 9PaS/min, wherein the change of this viscosity is preferably 18PaS/min, wherein the better curing temperature scope of this glue is between 150 degree to 200 degree Celsius Celsius, better on using of this glue by the time range that heats between 20 minutes to 40 minutes.
The present invention proposes again a kind of Heat transmission and send device, in order to encapsulate a light-emitting diode chip for backlight unit, comprises a preheating assembly and a conveyer belt.This preheating assembly is in order to this light-emitting diode chip for backlight unit of preheating, and wherein this light-emitting diode chip for backlight unit is just through being coated with a glue.This is used for conveyer belt to carry this light-emitting diode chip for backlight unit to one baking space, with complete encapsulation this light-emitting diode, wherein at this light-emitting diode chip for backlight unit before this tape transport, this glue not yet solidifies.
The present invention proposes again a kind of encapsulation procedure of light-emitting diode, comprising: carry light-emitting diode chip for backlight unit to baking space; And in this supplying step, by a point gum machine, this light-emitting diode chip for backlight unit is coated with a glue.
The present invention proposes again a kind of encapsulation procedure of light-emitting diode, comprising: carry light-emitting diode chip for backlight unit to baking space; And a preheating assembly is provided, be used to this light-emitting diode chip for backlight unit of preheating in this supplying step.
Accompanying drawing explanation
This case must by following graphic detailed description, in order to do more deep Xie ︰
Fig. 1 illustrates the packaging system commonly using light-emitting diode.
Fig. 2 illustrates the temperature of an embodiment of the glue of the encapsulation procedure for a light-emitting diode for viscosity variation diagram.
Fig. 3 A illustrates the side view that a kind of Heat transmission that can be used for encapsulation LED chip send device one embodiment.
Fig. 3 B illustrates a kind of Heat transmission that can be used for encapsulation LED chip and send device one embodiment one another side view.
Fig. 4 illustrates a kind of flow chart of light-emitting diode encapsulating procedure one embodiment.
Fig. 5 illustrates a kind of flow chart of another embodiment of light-emitting diode encapsulating procedure.
Fig. 6 illustrates a kind of flow chart of light-emitting diode automatic production method one embodiment.
Embodiment
A kind of glue of the encapsulation procedure for a light-emitting diode is proposed herein, in a preferred embodiment, the main component of this glue comprises: methyl silica gel (Methyl silicone), benzene ring compound (Benzyl compounds), epoxy resin (Epoxy resin), fluorescent RE powder, carborundum heat radiation powder and silicon antiprecipitant.Below the brief introduction about glue composition material:
Dimethyl silicone polymer (PDMS) is a kind of the macromolecule organic silicon compound, is commonly called organosilicon, has optically transparent characteristic, and in the ordinary course of things, is considered to inertia, nontoxic and nonflammable.It is the widest that PDMS belongs to use, the organic polymer material based on silicon.Solid-state PDMS belongs to a kind of silica gel.
Epoxy resin is the important thermoset plastics of a class, is widely used in adhesive, the purposes such as coating.
Fluorescent RE powder fluoridizes group of the lanthanides fluorescent material for matrix with oxygen, and interpolation is plumbous, bismuth is activator, fluoridizes group of the lanthanides fluorescent material with the oxygen forming dual activation.
Silicon antiprecipitant is used to improve fluorescent material sedimentation problem in LED.Silicon antiprecipitant effectively by fluorescent material diffusion evenly, can form stereo molecule chain among glue, and dispersion and absorption fluorescent material, make it to be uniformly distributed, and eliminate hot spot, promote luminous flux.Silicon antiprecipitant can improve the rheological characteristic of glue simultaneously, and then improves yield and consistency.
In addition, LED chip can produce high heat in minimum volume, and the thermal capacity of LED itself is very little, so these heat conduction must be gone out with the fastest speed, otherwise will produce very high knot heat.In order to as much as possible heat is drawn out to outside LED chip, among this glue, just with the addition of carborundum heat radiation powder.
In addition, the difference between LED chip refractive index (RI) and encapsulating material refractive index can not be too large, otherwise total reflection will be caused to make light reflection go back to LED chip inside and cannot effectively derive.In the present embodiment, the refractive index of this glue is 1.41.
The people such as Florian Schneider once inquired into the material behavior of the PDMS for optical micro electro-mechanical systems: in the streets PDMS, such as DOW CORNING (Dow Corning) though can solidify under middle temperature or hot conditions, but its curing rate is slower.Please refer to following hyperlink:
www.sciencedirect.com/science/article/pii/S0924424709000466
Commonly use glue curing speed slower, and certainly exist a time difference in the process of a plurality of LED chip point glue of arrangement in queue-type, so that before toasting, the glue be coated on a little earlier on LED chip is out of shape, and this lessens the refractive index of glue.In view of this, a kind of practice of glue being carried out to short time preheating is proposed herein.
Refer to Fig. 2.Fig. 2 illustrates the temperature of an embodiment of the glue of the encapsulation procedure for a light-emitting diode for viscosity variation diagram, wherein transverse axis is heating time (the number of minutes), the longitudinal axis is viscosity (PaS), curve first is that glue is when being heated to 120 degree Celsius from 25 degree Celsius, temperature is for the change of viscosity, curve second is that glue is when being heated to 80 degree Celsius from 25 degree Celsius, temperature is for the change of viscosity, the heating rate of curve first is 20 degree Celsius per minute, and heat five minutes at constant temperature 120 DEG C, the change of the viscosity of glue is greater than 9PaS/min, wherein the change of this viscosity is preferably 18PaS/min, wherein the better curing temperature scope of this glue is between 150 degree to 200 degree Celsius Celsius, better on using of this glue by the time range that heats between 20 minutes to 40 minutes.
Refer to Fig. 3 A, 3B.Fig. 3 A, 3B illustrate the different side views that a kind of Heat transmission that can be used for encapsulation LED chip send an embodiment of device, comprising: the mechanical arm 32 of glue 30, light-emitting diode chip for backlight unit 31, point gum machine, preheating assembly 33, conveyer belt 35 and baking space 37.Preheating assembly 33, in order to this light-emitting diode chip for backlight unit 31 of preheating, wherein this light-emitting diode chip for backlight unit 31 is just coated with a glue 30 via the effect of the mechanical arm 32 of point gum machine; And a conveyer belt 35, in order to carry this light-emitting diode chip for backlight unit 31 to one baking space 37, to complete this light-emitting diode 31 of encapsulation, wherein at this light-emitting diode chip for backlight unit 31 before the conveying of this conveyer belt 35, this glue 30 not yet solidifies.
In yet another embodiment, preheating assembly 33 can comprise: a heating plate, this heating plate has temperature range between 80 degree to 120 degree Celsius Celsius and a material structure, this material structure can by thermal conductivity preferably matter material formed, such as aluminium, copper and silver at least one of them.
In yet another embodiment, preheating assembly 33 can more comprise: a heating tunnel, this heating tunnel has temperature range between 80 degree to 120 degree Celsius Celsius and a material structure, this material structure can by thermal conductivity preferably matter material formed, such as aluminium, copper and silver at least one of them.
Referring to Fig. 3 and Fig. 4.Fig. 4 illustrates a kind of flow chart of light-emitting diode encapsulating procedure one embodiment, comprising: carry light-emitting diode chip for backlight unit 31 to baking space 37(step S401); And in this supplying step S401, by the mechanical arm 32 of a point gum machine, this light-emitting diode chip for backlight unit 31 is coated with a glue 30(step S402).
In yet another embodiment, the supplying step of the encapsulation procedure of light-emitting diode more can comprise one of them of a hot curing (Heat-Curing) and a ultraviolet light polymerization (UV-Curing) program, to make LED chip, projection and substrate closely can engage by glue.
In order to enable invocation point glue, coating action more precisely and standardization, among another embodiment, can more comprise the following steps: to make this point gum machine have an IPF, such as microcamera; And by this IPF, make on this glue each light-emitting diode chip for backlight unit in this plurality of light-emitting diode chip for backlight unit, formed respectively and have a hemispheric colloid, making this colloid have one is highly 75% of colloid radius.
In order to can solid luminous diode chip for backlight unit better in the encapsulation procedure of light-emitting diode, and ensure that it is shaping, among another embodiment, circle can be encapsulated in the outer setting one of this light-emitting diode chip for backlight unit, can ensure that the shape of this glue is unlikely the scope exceeding encapsulation circle.
Referring to Fig. 3 and Fig. 5.Fig. 5 illustrates a kind of flow chart of light-emitting diode encapsulating procedure one embodiment.Comprise: carry light-emitting diode chip for backlight unit 21 to baking space 27(step S501); And a preheating assembly 23 is provided, be used to this light-emitting diode chip for backlight unit of preheating 21(step S502 in this supplying step).
Refer to Fig. 6.Fig. 6 illustrates a kind of flow chart of light-emitting diode automatic production method one embodiment.Comprise the following steps: to provide plural light-emitting diode chip for backlight unit (step S601); The die bond processing procedure (step S602) of these light-emitting diode chip for backlight unit is carried out by a bonder; The bonding wire processing procedure (step S603) of these light-emitting diode chip for backlight unit is carried out by a reflow machine; Carry out the encapsulation procedure of these light-emitting diode chip for backlight unit by a point gum machine, wherein this point gum machine comprises a glue and a Heat transmission send device (step S604); And carry out the cutting of these light-emitting diode chip for backlight unit, test, sorting and packaging processing procedure (step S605).
In a word, in the encapsulation procedure of proposed light-emitting diode, by the reciprocation of preheating assembly and glue, the connection between light-emitting diode chip for backlight unit and substrate can be made more tight, define the shape of perfect bulb type.Except the yield improving light-emitting diode, and greatly reduce the demand of artificial separation, and then make the flow process of automated production diode chip for backlight unit become possibility.
Symbol description
11 LED chips
11S substrate
11B projection
10 packaging plastics
11C encapsulates circle
Curve first, second temperature is for the change of viscosity
30 glue
31 light-emitting diode chip for backlight unit
The mechanical arm of 32 point gum machines
33 preheating assemblies
35 conveyer belts
37 baking space
Claims (10)
1. an encapsulation procedure for light-emitting diode (LED), comprising:
Carry light-emitting diode chip for backlight unit to baking space; And
In this supplying step, by a point gum machine, this light-emitting diode chip for backlight unit is coated with a glue.
2. the encapsulation procedure of light-emitting diode as claimed in claim 1, wherein this supplying step more comprises one of them of a hot curing (Heat-Curing) and a ultraviolet light polymerization (UV-Curing) program.
3. the encapsulation procedure of light-emitting diode as claimed in claim 1, more comprises the following steps:
This point gum machine is made to have an IPF; And
By this IPF, make on this glue each light-emitting diode chip for backlight unit in this plurality of light-emitting diode chip for backlight unit, formed respectively and have a hemispheric colloid, wherein this colloid has a height.
4. the encapsulation procedure of the light-emitting diode as described in claim 1, more comprises the following steps: to encapsulate circle in the outer setting one of this light-emitting diode chip for backlight unit.
5. an encapsulation procedure for light-emitting diode, comprising:
Carry light-emitting diode chip for backlight unit to baking space; And
One preheating assembly is provided, is used to this light-emitting diode chip for backlight unit of preheating in this supplying step.
6. Heat transmission send a device, in order to encapsulate a light-emitting diode chip for backlight unit, comprising:
One preheating assembly, in order to this light-emitting diode chip for backlight unit of preheating, wherein this light-emitting diode chip for backlight unit is just through being coated with a glue; And
One conveyer belt, in order to carry this light-emitting diode chip for backlight unit to one baking space, with complete encapsulation this light-emitting diode, wherein at this light-emitting diode chip for backlight unit before this tape transport, this glue not yet solidifies.
7. Heat transmission as claimed in claim 6 send device, and wherein this preheating assembly comprises:
One heating plate, this heating plate has a temperature and a material structure, this material structure comprise aluminium, copper and silver at least one of them.
8., for a glue for the encapsulation procedure of a light-emitting diode, heat the condition of five minutes at 120 DEG C under, the change of its viscosity is greater than 9PaS/min, wherein
The change of this viscosity is preferably 18PaS/min, and wherein the better curing temperature scope of this glue is between 150 degree to 200 degree Celsius Celsius, better on using of this glue by the time range that heats between 20 minutes to 40 minutes.
9. glue as claimed in claim 9, comprising: methyl silica gel (Methyl silicone), benzene ring compound (Benzyl compounds), epoxy resin (Epoxy resin), fluorescent RE powder, silicon antiprecipitant and carborundum dispel the heat powder; And the refractive index of this glue (RI) is 1.41.
10. a light-emitting diode automatic production method, comprises the following steps:
Plural light-emitting diode chip for backlight unit is provided;
The die bond processing procedure of these light-emitting diode chip for backlight unit is carried out by a bonder;
The bonding wire processing procedure of these light-emitting diode chip for backlight unit is carried out by a reflow machine;
Carry out the encapsulation procedure of these light-emitting diode chip for backlight unit by a point gum machine, wherein this point gum machine comprises a glue and a Heat transmission send device; And
Carry out the cutting of these light-emitting diode chip for backlight unit, test, sorting and packaging processing procedure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340369.2A CN104347461A (en) | 2013-08-07 | 2013-08-07 | Heat transfer device for LED (Light-Emitting Diode) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310340369.2A CN104347461A (en) | 2013-08-07 | 2013-08-07 | Heat transfer device for LED (Light-Emitting Diode) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104347461A true CN104347461A (en) | 2015-02-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310340369.2A Pending CN104347461A (en) | 2013-08-07 | 2013-08-07 | Heat transfer device for LED (Light-Emitting Diode) |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106558641A (en) * | 2015-09-30 | 2017-04-05 | 江苏诚睿达光电有限公司 | A kind of compact-type organic siliconresin light conversion body brush seals the process of dress LED |
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| TW200929513A (en) * | 2007-12-19 | 2009-07-01 | Iledm Photoelectronics Inc | Method for packaging a light emitting diode and its structure |
| CN101546804A (en) * | 2009-04-27 | 2009-09-30 | 隆达电子股份有限公司 | Method for packaging light emitting diode |
| CN101740708A (en) * | 2009-12-25 | 2010-06-16 | 杜姬芳 | Integration and package method for high-power light-emitting diode (LED) light source |
| CN201644323U (en) * | 2009-12-22 | 2010-11-24 | 全方位自动化股份有限公司 | Automatic glue dispensing mechanism |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1945803A (en) * | 2006-10-27 | 2007-04-11 | 杭州中宙光电有限公司 | Packaging method for high power LED expansion light source device |
| TW200929513A (en) * | 2007-12-19 | 2009-07-01 | Iledm Photoelectronics Inc | Method for packaging a light emitting diode and its structure |
| CN101546804A (en) * | 2009-04-27 | 2009-09-30 | 隆达电子股份有限公司 | Method for packaging light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106558641A (en) * | 2015-09-30 | 2017-04-05 | 江苏诚睿达光电有限公司 | A kind of compact-type organic siliconresin light conversion body brush seals the process of dress LED |
| CN106558641B (en) * | 2015-09-30 | 2018-02-13 | 江苏诚睿达光电有限公司 | A kind of compact-type organic siliconresin light conversion body brush seals dress LED process |
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Application publication date: 20150211 |