CN105006511A - LED package method - Google Patents
LED package method Download PDFInfo
- Publication number
- CN105006511A CN105006511A CN201510453561.1A CN201510453561A CN105006511A CN 105006511 A CN105006511 A CN 105006511A CN 201510453561 A CN201510453561 A CN 201510453561A CN 105006511 A CN105006511 A CN 105006511A
- Authority
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- China
- Prior art keywords
- viscose
- hot melt
- led
- led chip
- hot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000012943 hotmelt Substances 0.000 claims description 53
- 229920000297 Rayon Polymers 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 23
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 3
- 239000004831 Hot glue Substances 0.000 abstract 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 description 10
- 238000000926 separation method Methods 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides an LED package method. The method comprises the steps that (1) multiple LED chips are distributed and fixed on a carrier plate in an array; (2) a hot-melt adhesive block doped with phosphor is placed at the top of the LED chip array; (3) the hot-melt adhesives block is heated, and at the same time the hot-melt adhesives block is pressed from the top until the LED chips can be pressed into the hot-melt adhesive, so that the hot-melt adhesive block completely wraps reflective surfaces on the side and the top of the LED chips; and (4) the LED chip array is cut to acquire LEDs which are individually packaged. The hot-melt adhesive doped with the phosphor can be preformed. At room temperature, the hot-melt adhesive is solid and is easy to store. When the hot-melt adhesive needs to be used, the hot-melt adhesive is cut into a right size. The hot-melt adhesive is heated, and the softened hot-melt adhesive covers the light emitting surfaces of the LED chips. After the hot-melt adhesive is cooled, the hot-melt adhesive and the surfaces of the LED chips are firmly bonded. A fluorescent adhesive layer is formed on the light emitting surfaces of the LED chips, and the process is easy and fast.
Description
Technical field
The present invention relates to LED, especially the method for packing of wafer-level package white light LEDs.
Background technology
Based on the novel wafer-level package LED(CSP LED of flip chip; Chip Scale
Package LED), be provided with electrode in die bottom surface, directly at upper surface and the side package on package colloid of chip, the electrode of bottom surface exposed, because this encapsulating structure there is no support or substrate, can packaging cost be reduced.Existing wafer-level package LED normally takes five luminescences, and namely the end face of LED and four sides all can be luminous, and the packaging technology of this kind of LED is relatively simple.Along with the raising that people require the angle, consistency etc. of product bright dipping, current wafer-level package LED structure can not meet people's needs, and people thirst for the appearance with the wafer-level package LED of one side luminescence.In the packaging technology of wafer-level package LED, main technique is surface fluorescent glue being covered LED chip, and in the technique of existing covering fluorescent glue, is generally mold fluorescent adhesive layer by the mode of model or printing.The moulding process of these fluorescent glues is all cumbersome, is the main cause causing LED production efficiency low.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of LED encapsulation method, and the fluorescent adhesive layer on LED chip is simply shaping, improves the efficiency of LED.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of LED encapsulation method, comprises the following steps:
(1) be that array format distribution is fixed on support plate by plurality of LEDs chip;
(2) the hot melt blob of viscose doped with fluorescent material is placed at the top of LED chip array;
(3) heat hot melt blob of viscose, exert pressure from the top of hot melt blob of viscose to it, until LED chip can be pressed in hot melt blob of viscose, the side of LED chip and the reflective surface of end face are wrapped up by hot melt blob of viscose completely simultaneously;
(4) LED chip array is cut, obtain single-encapsulated LED.
The present invention utilizes PUR as the carrier of fluorescent material, and PUR has good hot melt, can deliquescing after high-temperature heating, thus PUR can easily be covered in the light-emitting area of LED chip.In addition, the hot melt blob of viscose of doping fluorescent powder can be prefabricated, and at normal temperatures, hot melt blob of viscose is solid shape, conveniently deposits; When it is desired to be used, cut out suitable size, can be covered in the light-emitting area of LED chip after heat hot melten gel block makes its deliquescing; After heat of cooling melten gel, the combination that PUR can be firm with the surface of LED chip.
As improvement, the concrete grammar that in described step (1), LED chip is fixed on support plate is:
First on support plate, paste one deck UV two-sided tape film;
Then be fixed on by LED chip on UV two-sided tape film, leave gap between adjacent LED chip, bottom surface and the UV two-sided tape film of LED chip are affixed.
As improvement, described support plate is water white transparency support plate.
As improvement, the rectangular array of described LED chip or circular array are distributed on support plate.
As improvement, the manufacture method of the hot melt blob of viscose doped with fluorescent material in described step (2) is: PUR is heated to molten condition, then puts into fluorescent material; PUR is stirred, enables fluorescent material be evenly distributed in PUR; PUR is cooled, and makes square.
As improvement, in described step (3), utilize the top of briquetting to hot melt blob of viscose to exert pressure, utilize the heat of briquetting generation or conduction to heat hot melt blob of viscose.
As improvement, utilize stopping means to carry out spacing to hot melt blob of viscose descending depth, make the bottom of hot melt blob of viscose concordant with the bottom of LED chip, electrode is exposed in the bottom of LED chip.
As improvement, described stopping means is the boss being arranged on hot melt blob of viscose side, and boss is provided with groove, and the side of described hot melt blob of viscose is located in described groove, and the degree of depth of groove is the degree of depth that hot melt blob of viscose declines.
As improvement, described stopping means be arranged on support plate and and projection between LED chip, the height of LED chip and the height of projection are only poor is the descending depth of hot melt blob of viscose.
As improvement, one deck is set in the side of single-encapsulated LED and is in the light glue.The glue that is in the light can block the luminescence of LED chip side, only stays the end face of LED chip luminous, the LED bright dipping of this one side luminescence evenly.
The beneficial effect that the present invention is compared with prior art brought is:
The hot melt blob of viscose of doping fluorescent powder can be prefabricated, and at normal temperatures, hot melt blob of viscose is solid shape, conveniently deposits; When it is desired to be used, cut out suitable size, can be covered in the light-emitting area of LED chip after heat hot melten gel block makes its deliquescing; After heat of cooling melten gel, the combination that PUR can be firm with the surface of LED chip, more simple and quick in the technique of LED chip light-emitting area formable layer fluorescent adhesive layer.
Accompanying drawing explanation
Fig. 1 is present invention process flow chart.
Fig. 2 is the structural representation that embodiment 1 hot melt blob of viscose coordinates with stopping means.
Embodiment
Below in conjunction with Figure of description, the invention will be further described.
Embodiment 1
A kind of LED encapsulation method, changing LED is wafer-level package white light LEDs, and the bottom of LED chip is provided with electrode, and four sides of LED and end face are light-emitting area, go out to emit white light by blue-light excited fluorescent material.As shown in Figure 1, the method for packing of LED comprises the following steps:
(1) be fixed on support plate 1 by rectangular for plurality of LEDs chip 3 array format distribution, support plate 1 is glass plate, concrete fixing method:
(1.1) on support plate 1, first paste one deck and fix film 2, the fixing film 2 of the present embodiment is UV two-sided tape film;
(1.2) then by being fixed on UV two-sided tape film bottom LED chip 3, by utilizing Ultraviolet radiation support plate 1, UV two-sided tape film can be made to be separated with LED chip 3; Cut LED chip 3 in order in operation below, between adjacent LED chip 3, leave gap, and clearance distance between adjacent LED chip 3 is equal;
(2) the hot melt blob of viscose 4 doped with fluorescent material is placed at the top of LED chip 3 array, the manufacture method of the hot melt blob of viscose 4 of doping fluorescent powder:
(2.1) PUR is heated to molten condition, then puts into fluorescent material, the ratio of fluorescent material and PUR can be arranged as required, and those skilled in the art, by the proportioning of fluorescent material in existing fluorescent glue, can know how proportioning fluorescent material in PUR;
(2.2) stirred by PUR, enable fluorescent material be evenly distributed in PUR, it is more evenly better to stir;
(2.3) PUR is poured in square mould cool, and make the hot melt blob of viscose 4 of square;
(3) top of briquetting 5 pairs of hot melt blob of viscoses 4 is utilized to exert pressure, the heat utilizing briquetting 5 to produce carries out heating to hot melt blob of viscose 4 makes hot melt blob of viscose 4 deliquescing, until LED chip 3 can be pressed in PUR, the side of LED chip 3 and the reflective surface of end face are wrapped up by PUR completely; Utilize stopping means to carry out spacing to hot melt blob of viscose 4 descending depth, make the bottom of hot melt blob of viscose 4 concordant with the bottom of LED chip 3, electrode 6 is exposed in the bottom of LED chip 3; As shown in Figure 2, described stopping means is the boss 7 being arranged on hot melt blob of viscose 4 side, and boss 7 is provided with groove 8, and the side of described hot melt blob of viscose 4 is located in described groove 8, and the depth H of groove 8 is the degree of depth that hot melt blob of viscose 4 declines;
(4) cut in the middle of the gap between adjacent LED chip 3, the degree of depth of cutting, to the UV two-sided tape film on support plate 1, makes adjacent LED chip 3 be separated from each other;
(5) utilize ultraviolet light to irradiate UV two-sided tape film from the bottom surface of support plate 1, UV two-sided tape film is separated with LED chip 3, can obtains single led.
In order to enable LED realize one side luminescence, one deck can be covered in LED side and to be in the light glue.The glue that is in the light can block the luminescence of LED chip 3 side, only stays the end face of LED chip 3 luminous, the LED bright dipping of this one side luminescence evenly.
Embodiment 2
A kind of LED encapsulation method, this LED is wafer-level package white light LEDs, and the bottom of LED chip 3 is provided with four sides of electrode 6, LED and end face is light-emitting area, is emitted white light by blue-light excited fluorescent material.As shown in Figure 1, the method for packing of LED comprises the following steps:
(1) be fixed on support plate 1 by rounded for plurality of LEDs chip 3 array format distribution, support plate 1 is glass plate, concrete fixing method:
(1.1) on support plate 1, first paste one deck and fix film 2, the fixing film 2 of the present embodiment is thermal separation gel band film;
(1.2) then will being fixed on thermal separation gel band film bottom LED chip 3, by utilizing heating support plate 1, thermal separation gel band film can being made to be separated with LED chip 3; Cut LED chip 3 in order in operation below, between adjacent LED chip 3, leave gap, and clearance distance between adjacent LED chip 3 is equal;
(2) the hot melt blob of viscose 4 doped with fluorescent material is placed at the top of LED chip 3 array, the manufacture method of the hot melt blob of viscose 4 of doping fluorescent powder:
(2.1) PUR is heated to molten condition, then puts into fluorescent material, the ratio of fluorescent material and PUR can be arranged as required, and those skilled in the art, by the proportioning of fluorescent material in existing fluorescent glue, can know how proportioning fluorescent material in PUR;
(2.2) stirred by PUR, enable fluorescent material be evenly distributed in PUR, it is more evenly better to stir;
(2.3) PUR is poured in the mould of circle and cool, and make conglobate hot melt blob of viscose 4;
(3) top of briquetting 5 pairs of hot melt blob of viscoses 4 is utilized to exert pressure, heat is passed to hot melt blob of viscose 4 by briquetting 5 and makes its deliquescing by heater, until LED chip 3 can be pressed in PUR, the side of LED chip 3 and the reflective surface of end face are wrapped up by PUR completely; Utilize stopping means to carry out spacing to hot melt blob of viscose 4 descending depth, make the bottom of hot melt blob of viscose 4 concordant with the bottom of LED chip 3, electrode 6 is exposed in the bottom of LED chip 3; Described stopping means is be arranged on support plate 1 and projection between LED chip 3, and the height of LED chip 3 and the height of projection are only poor is the descending depth of hot melt blob of viscose 4;
(4) cut in the middle of the gap between adjacent LED chip 3, the degree of depth of cutting, to the thermal separation gel band film on support plate 1, makes adjacent LED chip 3 be separated from each other;
(5) heat support plate 1, thermal separation gel band film is separated with LED chip 3, can obtains single led.
In order to enable LED realize one side luminescence, one deck can be covered in LED side and to be in the light glue.The glue that is in the light can block the luminescence of LED chip 3 side, only stays the end face of LED chip 3 luminous, the LED bright dipping of this one side luminescence evenly.
Claims (10)
1. a LED encapsulation method, is characterized in that, comprises the following steps:
(1) be that array format distribution is fixed on support plate by plurality of LEDs chip;
(2) the hot melt blob of viscose doped with fluorescent material is placed at the top of LED chip array;
(3) heat hot melt blob of viscose, exert pressure from the top of hot melt blob of viscose to it, until LED chip can be pressed in hot melt blob of viscose, the side of LED chip and the reflective surface of end face are wrapped up by hot melt blob of viscose completely simultaneously;
(4) LED chip array is cut, obtain single-encapsulated LED.
2. a kind of LED encapsulation method according to claim 1, is characterized in that: the concrete grammar that in described step (1), LED chip is fixed on support plate is:
First on support plate, paste one deck UV two-sided tape film;
Then be fixed on by LED chip on UV two-sided tape film, leave gap between adjacent LED chip, bottom surface and the UV two-sided tape film of LED chip are affixed.
3. a kind of LED encapsulation method according to claim 1 and 2, is characterized in that: described support plate is water white transparency support plate.
4. a kind of LED encapsulation method according to claim 1, is characterized in that: the rectangular array of described LED chip or circular array are distributed on support plate.
5. a kind of LED encapsulation method according to claim 1, is characterized in that: in described step (2), and the manufacture method doped with the hot melt blob of viscose of fluorescent material is:
PUR is heated to molten condition, then puts into fluorescent material;
PUR is stirred, enables fluorescent material be evenly distributed in PUR;
PUR is cooled, and makes square.
6. a kind of LED encapsulation method according to claim 1, is characterized in that: in described step (3), utilizes the top of briquetting to hot melt blob of viscose to exert pressure, and utilizes the heat of briquetting generation or conduction to heat hot melt blob of viscose.
7. a kind of LED encapsulation method according to claim 1, is characterized in that: utilize stopping means to carry out spacing to hot melt blob of viscose descending depth, make the bottom of hot melt blob of viscose concordant with the bottom of LED chip, electrode is exposed in the bottom of LED chip.
8. a kind of LED encapsulation method according to claim 7, it is characterized in that: described stopping means is the boss being arranged on hot melt blob of viscose side, boss is provided with groove, and the side of described hot melt blob of viscose is located in described groove, and the degree of depth of groove is the degree of depth that hot melt blob of viscose declines.
9. a kind of LED encapsulation method according to claim 7, is characterized in that: described stopping means be arranged on support plate and and projection between LED chip, the difference of the height of LED chip and the height of projection is the descending depth of hot melt blob of viscose.
10. a kind of LED encapsulation method according to claim 1, is characterized in that: arrange one deck in the side of single-encapsulated LED and to be in the light glue.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510453561.1A CN105006511A (en) | 2015-07-29 | 2015-07-29 | LED package method |
| EP16802375.2A EP3217442B1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
| US15/535,709 US10573794B2 (en) | 2015-05-29 | 2016-03-31 | Method of packaging CSP LED and CSP LED |
| PCT/CN2016/077939 WO2016192452A1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510453561.1A CN105006511A (en) | 2015-07-29 | 2015-07-29 | LED package method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105006511A true CN105006511A (en) | 2015-10-28 |
Family
ID=54379106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510453561.1A Pending CN105006511A (en) | 2015-05-29 | 2015-07-29 | LED package method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105006511A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655261A (en) * | 2016-03-11 | 2016-06-08 | 导装光电科技（深圳）有限公司 | Preparation technology of white-light flip chip |
| CN106098903A (en) * | 2016-08-03 | 2016-11-09 | 深圳市兆驰节能照明股份有限公司 | Multiaspect goes out light CSP light source and manufacture method thereof |
| WO2016192452A1 (en) * | 2015-05-29 | 2016-12-08 | 广州市鸿利光电股份有限公司 | Encapsulation method of csp led and csp led |
| CN107657904A (en) * | 2017-11-28 | 2018-02-02 | 深圳市秀狐科技有限公司 | A kind of black glue LED display and its processing method |
| CN107731121A (en) * | 2017-11-28 | 2018-02-23 | 深圳市秀狐科技有限公司 | A kind of double-deck glue LED display and its processing method |
| CN109285938A (en) * | 2018-10-10 | 2019-01-29 | 华中科技大学 | A kind of chip-scale LED encapsulation method of high heat stability and products thereof |
| CN109309153A (en) * | 2017-07-28 | 2019-02-05 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN109459887A (en) * | 2018-11-06 | 2019-03-12 | 惠州市华星光电技术有限公司 | The production method and light source assembly of light source assembly |
| CN109950379A (en) * | 2017-12-20 | 2019-06-28 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED of multifaceted light-emitting and preparation method thereof, backlight module |
| WO2021109009A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode and manufacturing method therefor, light-emitting diode module, and display device |
| CN114447192A (en) * | 2022-01-20 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
| CN115437180A (en) * | 2022-09-02 | 2022-12-06 | 深圳市云密芯显示技术有限公司 | LED lamp panel and preparation method thereof |
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| WO2014185693A1 (en) * | 2013-05-13 | 2014-11-20 | 서울반도체 주식회사 | Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same |
| CN104253194A (en) * | 2014-09-18 | 2014-12-31 | 易美芯光（北京）科技有限公司 | Structure and method for packaging of chip-size white LED (light emitting diode) |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014185693A1 (en) * | 2013-05-13 | 2014-11-20 | 서울반도체 주식회사 | Light-emitting device package, manufacturing method thereof, and vehicle lamp and backlight unit including same |
| CN104253194A (en) * | 2014-09-18 | 2014-12-31 | 易美芯光（北京）科技有限公司 | Structure and method for packaging of chip-size white LED (light emitting diode) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016192452A1 (en) * | 2015-05-29 | 2016-12-08 | 广州市鸿利光电股份有限公司 | Encapsulation method of csp led and csp led |
| US10573794B2 (en) | 2015-05-29 | 2020-02-25 | Hongli Zhihui Group Co.,Ltd. | Method of packaging CSP LED and CSP LED |
| CN105655261A (en) * | 2016-03-11 | 2016-06-08 | 导装光电科技（深圳）有限公司 | Preparation technology of white-light flip chip |
| CN106098903A (en) * | 2016-08-03 | 2016-11-09 | 深圳市兆驰节能照明股份有限公司 | Multiaspect goes out light CSP light source and manufacture method thereof |
| CN109309153A (en) * | 2017-07-28 | 2019-02-05 | 晶元光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN107657904A (en) * | 2017-11-28 | 2018-02-02 | 深圳市秀狐科技有限公司 | A kind of black glue LED display and its processing method |
| CN107731121A (en) * | 2017-11-28 | 2018-02-23 | 深圳市秀狐科技有限公司 | A kind of double-deck glue LED display and its processing method |
| CN109950379A (en) * | 2017-12-20 | 2019-06-28 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED of multifaceted light-emitting and preparation method thereof, backlight module |
| CN109950379B (en) * | 2017-12-20 | 2021-04-06 | 芜湖聚飞光电科技有限公司 | Multi-surface light-emitting chip-scale packaged LED, manufacturing method thereof and backlight module |
| CN109285938A (en) * | 2018-10-10 | 2019-01-29 | 华中科技大学 | A kind of chip-scale LED encapsulation method of high heat stability and products thereof |
| CN109459887A (en) * | 2018-11-06 | 2019-03-12 | 惠州市华星光电技术有限公司 | The production method and light source assembly of light source assembly |
| CN109459887B (en) * | 2018-11-06 | 2021-11-02 | 惠州市华星光电技术有限公司 | Method for manufacturing light source component and light source component |
| WO2021109009A1 (en) * | 2019-12-03 | 2021-06-10 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode and manufacturing method therefor, light-emitting diode module, and display device |
| CN114447192A (en) * | 2022-01-20 | 2022-05-06 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
| CN114447192B (en) * | 2022-01-20 | 2023-09-19 | 东莞市中麒光电技术有限公司 | Display module manufacturing method, display module and display screen |
| CN115437180A (en) * | 2022-09-02 | 2022-12-06 | 深圳市云密芯显示技术有限公司 | LED lamp panel and preparation method thereof |
| CN115437180B (en) * | 2022-09-02 | 2024-04-30 | 深圳市云密芯显示技术有限公司 | LED lamp panel and preparation method thereof |
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Application publication date: 20151028 |