CN105655261A - Preparation technology of white-light flip chip - Google Patents
Preparation technology of white-light flip chip Download PDFInfo
- Publication number
- CN105655261A CN105655261A CN201610141543.4A CN201610141543A CN105655261A CN 105655261 A CN105655261 A CN 105655261A CN 201610141543 A CN201610141543 A CN 201610141543A CN 105655261 A CN105655261 A CN 105655261A
- Authority
- CN
- China
- Prior art keywords
- chip
- flip
- silica gel
- upside
- fluorescent material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000741 silica gel Substances 0.000 claims abstract description 44
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 44
- 238000005286 illumination Methods 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 42
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 3
- 230000007306 turnover Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 238000001723 curing Methods 0.000 abstract 1
- 238000013007 heat curing Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 239000000047 product Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a preparation technology of a white-light flip chip. The preparation technology comprises the steps that a UV adhesive sheet is placed on a support platform, and the bottom of a flip chip is closely stuck to the UV adhesive sheet; mixed fluorescent powder and silica gel are applied to the four sides and the top of the flip chip to form a fluorescent powder and silica gel layer; the applied flip chip is put into a vacuum chamber for vacuum debubbling; the flip chip is taken out of the vacuum chamber, and the retained fluorescent powder and silica gel on the top of the flip chip are uniformly scraped according to the set height of the fluorescent powder and silica gel layer; heat curing is performed on the coated flip chip; after high-temperature curing is finished, cutting and UV illumination stripping are sequentially performed to obtain the finished white-light flip chip. According to the preparation technology of the white-light flip chip, simpleness and high efficiency are achieved, expensive and complex equipment is not needed, continuous mass production can be achieved, and the production cost is reduced.
Description
Technical field
The present invention relates to the encapsulation field of flip-chip, particularly to the preparation technology of a kind of upside-down mounting white chip.
Background technology
The structure of flip-chip is that the electrode of chip and light-emitting zone are in the bottom of transparent sapphire substrate, contrary with positive cartridge chip (parallel construction), so that heat can directly be led away from bottom, without going through adiabatic Sapphire Substrate, and CURRENT DISTRIBUTION is more uniform, flip-chip can be used under bigger electric current density, more eliminate the cost of bonding wire and the hidden danger of broken string.
Upside-down mounting white chip refers to the flip-chip being coated with fluorescent material, also referred to as (CSP, ChipScalePackage), i.e. and wafer-level package. Because Sapphire Substrate is transparent crystal, flip-chip is that five faces go out light, and fluorescent material must be coated in upper surface and four sides, and the electrode zone of bottom must not be polluted by silica gel and fluorescent material simultaneously.
At present, the preparation method of upside-down mounting white chip specifically includes that
1, adopting the compacting of silica gel fluorescent material to form, five faces go out light, and light efficiency is high, but the colour temperature concordance of top and surrounding controls poor, and the CSP that moral person of outstanding talent profit reaches is based on this.
2, adopting titanium dioxide protection around to cover fluorescent powder membrane again, only one, top light-emitting area, the concordance of light and directivity are fine, but have lost the light output of surrounding, and light efficiency can be on the low side. At present, Samsung mainly adopts this technology to be main.
3, adopting fluorescent powder membrane all standing, then it is fixed-type to add transparent silica gel, is also that five faces go out light, light efficiency is high, and light quality is slightly worse, and this kind of is mainly Philip and adopts.
No matter which kind of preparation method above-mentioned, common feature is:
1). must carry out under vacuo, because being one groove between two electrodes bottom flip-chip, it is necessary to being extracted out by air, otherwise during silica gel heating, air expansion can produce a large amount of bubble;
2). fluorescent material must prepare into semi-finished product thin film in advance, and thin film must be first soften resolidification when high temperature, so just can cover surface and the side of chip;
3). thin film must be placed in advance in vacuum chamber together with flip-chip, and just can cover chip surface after vacuum is taken out;
4). flip-chip needs hot-press solidifying molding under vacuum.
It is limited to the above condition, the preparation of upside-down mounting white chip is significantly high to equipment requirements, equipment complex and expensive, evacuation, heating, cooling, venting simultaneously etc. is required for the longer time, and the volume of vacuum chamber can not once hold a lot of chip, the main cause being difficult to promote here it is restriction upside-down mounting white chip cost remains high.
Summary of the invention
The main purpose of the present invention is for providing the preparation technology of a kind of upside-down mounting white chip, simply efficiently, it is not necessary to equipment costly, can large-scale production continuously, reduce production cost.
The present invention proposes the preparation technology of a kind of upside-down mounting white chip, comprises the following steps:
Turn over crystalline substance, UV film is positioned on support platform, and the bottom of flip-chip is closely bonded on described UV film;
Vacuum defoamation, is coated in four sides and the top of flip-chip by the fluorescent material mixed and silica gel, forms fluorescent material and layer of silica gel; And the flip-chip applied is put into vacuum chamber carry out vacuum defoamation;
Coated and molded, after vacuum defoamation completes, takes out described flip-chip from vacuum chamber, and according to the fluorescent material set and layer of silica gel height, fluorescent material that flip-chip top described in uniform blade coating is unnecessary and silica gel;
Hot setting, is heated the flip-chip after coated and molded, makes top and four sides of flip-chip described in fluorescent material and layer of silica gel cure package;
Cutting, after hot setting completes, cuts along the gap between each flip-chip;
UV illumination demoulding, removes described support platform, uses UV light to irradiate described UV film and makes it lose viscosity, removes the UV film after losing viscosity, obtain upside-down mounting white chip finished product.
Further, also include after the step of described UV illumination demoulding:
Upside-down mounting white chip finished product is carried out quality test and sorted and packaged.
Further, described support platform is glass plate or the bright and clean indeformable metallic plate of resistant to elevated temperatures surfacing.
Further, described support platform is colourless transparent glass plate.
Further, the step of described coated and molded includes:
After vacuum defoamation completes, described flip-chip is taken out in vacuum chamber, and according to the fluorescent material set and layer of silica gel height, the fluorescent material unnecessary by flip-chip top described in the uniform blade coating of coating machine and silica gel.
Further, the step of described hot setting includes:
Flip-chip after described coated and molded is put in baking oven and heat, make top and four sides of flip-chip described in fluorescent material and layer of silica gel cure package.
Further, the bottom of described flip-chip is electrode zone.
The preparation technology of the upside-down mounting white chip provided in the present invention, has the advantages that
The preparation technology of upside-down mounting white chip provided in the present invention, simply efficiently, it is not necessary to equipment costly, use conventional equipment just can large-scale production continuously, reduction production cost; Without making half-finished fluorescent powder film in advance, simplify operation, improve work efficiency.
Accompanying drawing explanation
Fig. 1 is the preparation technology schematic flow sheet of upside-down mounting white chip in one embodiment of the invention:
Fig. 2 turns over brilliant operation schematic diagram in one embodiment of the invention;
Fig. 3 is vacuum defoamation operation schematic diagram in one embodiment of the invention;
Fig. 4 is coated and molded operation schematic diagram in one embodiment of the invention;
Fig. 5 is hot setting operation schematic diagram in one embodiment of the invention.
The realization of the object of the invention, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.
Detailed description of the invention
Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention.
With reference to Fig. 1, for the preparation technology schematic flow sheet of upside-down mounting white chip in one embodiment of the invention.
One embodiment of the invention proposes the preparation technology of a kind of upside-down mounting white chip, comprises the following steps:
Step S1, turns over crystalline substance, is positioned over by UV film 20 on support platform 10, and is closely bonded on above-mentioned UV film 20 bottom of flip-chip 30.
In the present embodiment, support platform 10 being placed level, and keeps balance, lain in a horizontal plane in by UV (ultraviolet) film 20 on support platform 10, above-mentioned UV film 20 can lose viscosity under the irradiation of UV light; Then, the bottom needing the flip-chip 30 of encapsulation is closely bonded on above-mentioned UV film 20, the bottom of above-mentioned flip-chip 30 is electrode zone, use UV film 20 to be bonded at the bottom of flip-chip 30, be primarily to the electrode zone preventing flip-chip 30 and polluted by silica gel and the fluorescent material of subsequent handling. (with reference to Fig. 2)
Step S2, vacuum defoamation, the fluorescent material mixed and silica gel are coated in four sides and the top of flip-chip 30, form fluorescent material and layer of silica gel 40; And the flip-chip 30 applied is put into vacuum chamber carry out vacuum defoamation.
In the present embodiment, upside-down mounting white chip is actually coated with the flip-chip 30 of fluorescent material, the combined effect of fluorescent material and flip-chip 30 so that upside-down mounting white chip sends white light. The bottom of above-mentioned flip-chip 30 can not coating fluorescent powder and silica gel, can only be coated in other five faces (i.e. four sides and top). The fluorescent material mixed and silica gel being coated on five faces of flip-chip 30 and form fluorescent material and layer of silica gel 40, and fluorescent material and layer of silica gel 40 have enough thickness, this thickness is more than the height of flip-chip 30. Afterwards, the flip-chip 30 applied is put into vacuum chamber and carries out vacuum defoamation, by the evacuating air between flip-chip 30 bottom electrode, it is prevented that produce a large amount of bubble during heating. Further, in the present embodiment, owing to flip-chip 30 need not be carried out hot pressing, flip-chip 30 to vacuum indoor evacuation together can just be placed in batches. (with reference to Fig. 3)
Step S3, coated and molded, after vacuum defoamation completes, takes out above-mentioned flip-chip 30 in vacuum chamber, and according to the fluorescent material set and layer of silica gel 40 height (or thickness), fluorescent material that uniform blade coating above-mentioned flip-chip 30 top is unnecessary and silica gel.
According to different production needs, generally require fluorescent material and layer of silica gel 40 thickness of different-thickness, the fluorescent material of pre-set needs and layer of silica gel 40 height. In the present embodiment, after vacuum defoamation completes, above-mentioned flip-chip 30 is taken out in vacuum chamber, horizontal positioned, and according to the fluorescent material set and layer of silica gel 40 height, fluorescent material that blade coating flip-chip 30 top is unnecessary and silica gel so that the fluorescent material of each flip-chip 30 and layer of silica gel 40 consistency of thickness, namely keep the concordance that upside-down mounting white chip produces. (with reference to Fig. 4)
Step S4, hot setting, the flip-chip 30 after coated and molded is heated, makes top and four sides of fluorescent material and the above-mentioned flip-chip 30 of layer of silica gel 40 cure package.
In the present embodiment, after coated and molded, flip-chip 30 carrying out high-temperature heating (can put in baking oven and heat), makes fluorescent material and layer of silica gel 40 solidify, it just can encapsulate top and four sides of above-mentioned flip-chip 30 after solidifying. (with reference to Fig. 5), owing to flip-chip 30 need not be carried out hot pressing, just can place in flip-chip 30 to baking oven in batches.
Step S5, cutting, after hot setting completes, cut along the gap between each flip-chip 30.
Owing to, in batch production, linking together after all being solidified by fluorescent material and silica gel between each flip-chip 30, thus, after hot setting, need to cut along the gap between each flip-chip 30, to obtain single upside-down mounting white chip.
Step S6, UV illumination demoulding, removes above-mentioned support platform 10, uses UV light to irradiate above-mentioned UV film 20 and makes it lose viscosity, removes the UV film 20 after losing viscosity, obtain upside-down mounting white chip finished product.
Above-mentioned UV film 20 loses viscosity under the irradiation of UV light, just can come off from the bottom of above-mentioned flip-chip 30, removes UV film 20, just obtains upside-down mounting white chip finished product.
Further, above-mentioned steps S6, UV illumination demoulding, can also include afterwards:
Upside-down mounting white chip finished product is carried out quality test and sorted and packaged. This step is mainly the product quality to upside-down mounting white chip and detects, detect qualified after carry out sorted and packaged again.
Further, above-mentioned support platform 10 is glass plate or the bright and clean indeformable metallic plate of resistant to elevated temperatures surfacing; Preferably, above-mentioned support platform 10 can be colourless transparent glass plate.
Further, the step of above-mentioned coated and molded includes:
After vacuum defoamation completes, above-mentioned flip-chip 30 is taken out in vacuum chamber, and according to the fluorescent material set and layer of silica gel 40 height, the fluorescent material unnecessary by coating machine uniform blade coating above-mentioned flip-chip 30 top and silica gel.
Further, the step of above-mentioned hot setting includes:
Flip-chip 30 after above-mentioned coated and molded is put in baking oven and heat, make top and four sides of fluorescent material and the above-mentioned flip-chip 30 of layer of silica gel 40 cure package.
In sum, the preparation technology of the upside-down mounting white chip for providing in one embodiment of the invention, by separately performed to vacuum defoamation, coated and molded and hot setting, simple efficient, it is not necessary to equipment costly, it is not necessary to hot pressing, use conventional equipment just can large-scale production continuously, reduction production cost; Without making half-finished fluorescent powder film in advance, simplify operation, improve work efficiency.
The foregoing is only the preferred embodiments of the present invention; not thereby the scope of the claims of the present invention is limited; every equivalent structure utilizing description of the present invention and accompanying drawing content to make or equivalence flow process conversion; or directly or indirectly it is used in other relevant technical fields, all in like manner include in the scope of patent protection of the present invention.
Claims (7)
1. the preparation technology of a upside-down mounting white chip, it is characterised in that comprise the following steps:
Turn over crystalline substance, UV film is positioned on support platform, and the bottom of flip-chip is closely bonded on described UV film;
Vacuum defoamation, is coated in four sides and the top of flip-chip by the fluorescent material mixed and silica gel, forms fluorescent material and layer of silica gel; And the flip-chip applied is put into vacuum chamber carry out vacuum defoamation;
Coated and molded, after vacuum defoamation completes, takes out described flip-chip from vacuum chamber, and according to the fluorescent material set and layer of silica gel height, fluorescent material that flip-chip top described in uniform blade coating is unnecessary and silica gel;
Hot setting, is heated the flip-chip after coated and molded, makes top and four sides of flip-chip described in fluorescent material and layer of silica gel cure package;
Cutting, after hot setting completes, cuts along the gap between each flip-chip;
UV illumination demoulding, removes described support platform, uses UV light to irradiate described UV film and makes it lose viscosity, removes the UV film after losing viscosity, obtain upside-down mounting white chip finished product.
2. the preparation technology of upside-down mounting white chip according to claim 1, it is characterised in that also include after the step of described UV illumination demoulding:
Upside-down mounting white chip finished product is carried out quality test and sorted and packaged.
3. the preparation technology of upside-down mounting white chip according to claim 1, it is characterised in that described support platform is glass plate or the bright and clean indeformable metallic plate of resistant to elevated temperatures surfacing.
4. the preparation technology of upside-down mounting white chip according to claim 3, it is characterised in that described support platform is colourless transparent glass plate or the bright and clean indeformable metallic plate of resistant to elevated temperatures surfacing.
5. the preparation technology of upside-down mounting white chip according to claim 1, it is characterised in that the step of described coated and molded includes:
After vacuum defoamation completes, described flip-chip is taken out in vacuum chamber, and according to the fluorescent material set and layer of silica gel height, the fluorescent material unnecessary by flip-chip top described in the uniform blade coating of coating machine and silica gel.
6. the preparation technology of upside-down mounting white chip according to claim 1, it is characterised in that the step of described hot setting includes:
Flip-chip after described coated and molded is put in baking oven and heat, make top and four sides of flip-chip described in fluorescent material and layer of silica gel cure package.
7. the preparation technology of upside-down mounting white chip according to claim 1, it is characterised in that the bottom of described flip-chip is electrode zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610141543.4A CN105655261A (en) | 2016-03-11 | 2016-03-11 | Preparation technology of white-light flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610141543.4A CN105655261A (en) | 2016-03-11 | 2016-03-11 | Preparation technology of white-light flip chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105655261A true CN105655261A (en) | 2016-06-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610141543.4A Pending CN105655261A (en) | 2016-03-11 | 2016-03-11 | Preparation technology of white-light flip chip |
Country Status (1)
| Country | Link |
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| CN (1) | CN105655261A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231678A (en) * | 2017-12-28 | 2018-06-29 | 武汉驿路通科技股份有限公司 | A kind of planar waveguide-type optical branching-device chip cutting technique |
| CN113130456A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | LED chip mounting and pasting method |
| CN115376935A (en) * | 2022-08-30 | 2022-11-22 | 歌尔微电子股份有限公司 | Packaged chip and processing method |
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| CN104851961A (en) * | 2015-03-24 | 2015-08-19 | 湘能华磊光电股份有限公司 | Chip scale packaging method and structure for light-emitting device |
| CN105006511A (en) * | 2015-07-29 | 2015-10-28 | 广州市鸿利光电股份有限公司 | LED package method |
-
2016
- 2016-03-11 CN CN201610141543.4A patent/CN105655261A/en active Pending
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| CN101123284A (en) * | 2006-08-09 | 2008-02-13 | 刘胜 | Encapsulation method for high-brightness white light LED |
| US8048695B2 (en) * | 2008-09-02 | 2011-11-01 | Bridgelux, Inc. | Method for fabricating a light source that includes phosphor-converted LED |
| CN101749654A (en) * | 2008-12-18 | 2010-06-23 | 富士迈半导体精密工业（上海）有限公司 | Lighting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108231678A (en) * | 2017-12-28 | 2018-06-29 | 武汉驿路通科技股份有限公司 | A kind of planar waveguide-type optical branching-device chip cutting technique |
| CN113130456A (en) * | 2019-12-31 | 2021-07-16 | Tcl集团股份有限公司 | LED chip mounting and pasting method |
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| CN115376935A (en) * | 2022-08-30 | 2022-11-22 | 歌尔微电子股份有限公司 | Packaged chip and processing method |
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Application publication date: 20160608 |
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