CN101123284A - Encapsulation method for high-brightness white light LED - Google Patents
Encapsulation method for high-brightness white light LED Download PDFInfo
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- CN101123284A CN101123284A CNA2006100298567A CN200610029856A CN101123284A CN 101123284 A CN101123284 A CN 101123284A CN A2006100298567 A CNA2006100298567 A CN A2006100298567A CN 200610029856 A CN200610029856 A CN 200610029856A CN 101123284 A CN101123284 A CN 101123284A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
A packaging method for high-brightness light-emitting diode of white light mainly comprises a light-emitting diode chip, a radiating substrate and a phosphor glue film. The invention is characterized in that the light-emitting diode chip is welded on the substrate, a mould coated with the mould release is positioned on the radiating substrate by pressurizing, the package resin containing phosphor is poured into the mould, then glue film with uniform thickness and containing phosphor is formed on the upper surface and lateral surface of the light-emitting diode chip after evacuation, solidification and mold release. The invention has the advantages that a glue film containing phosphor with uniform thickness formed on the external surface of the light-emitting diode chip promotes the uniformity and consistency of luminescence from the light-emitting diode chip, and promotes the production efficiency of packaging.
Description
Technical field
The present invention relates to a kind of encapsulation technology of semiconductor device, particularly a kind of method for packing of high-brightness white light LED.
Technical background
Existing high-brightness white-light LED is to be mixed by each coloured light.As utilize red, green, blue three color chips combination back to mix the formation white light by optical lens, or adopt purple light or ultraviolet excitation RGB (RGB) fluorescent material to obtain white light, perhaps adopt blue-light excited yellow fluorescent powder to obtain white light.It is maximum wherein to adopt the blue light-emitting diode led chip to add YAG yellow fluorescent powder generation white applications, by the YAG yellow fluorescent powder is mixed in epoxy resin or the silica gel, mixing the back is coated on the blue chip in the mode that applies or put glue, the coating dosage control of yellow fluorescent powder is inaccurate in encapsulation process but the shortcoming of this method is, perhaps can not carry out the conformal coating according to the shape of chip and the blue partially or yellow partially phenomenon of emergent light then can occur.In practical operation, can find because epoxy resin or silica gel flowability are very strong, the encapsulation glue that is mixed with fluorescent material when adopting mechanical or manual method to apply can not and form uniform coat all around on the surface of chip, thereby makes the white light LEDs quality be difficult to guarantee.In order to overcome this defective, people propose the glue that is mixed with fluorescent material is solidified into film earlier, stick on the luminescence chip then.But this method can not guarantee the side of chip equally and apply fluorescent material equably; Simultaneously, owing to be difficult between luminescence chip and the film guarantee that zero-clearance is bonding, cause light, cause the decline of light extraction efficiency there not be on the bonding fully interface generation repeatedly reflect and reflect; In addition, because each luminescence chip all will be pasted the film after the curing, production efficiency is very low, is unfavorable for large-scale production, and this method for packing only is suitable for flip-chip, is very limited in the application.
Summary of the invention
The objective of the invention is provides a kind of method for packing of high-brightness white light LED at the defective that exists in the prior art.The present invention has mainly solved the light-emitting diode chip for backlight unit upper surface and side while coating thickness contains the fluorescent material glue-line uniformly, guarantees the uniformity of luminance and the consistency of the LED product of batch process.The present invention mainly comprises: light-emitting diode chip for backlight unit, heat-radiating substrate, phosphor laminate, it is characterized in that described at least one light-emitting diode chip for backlight unit that on heat-radiating substrate, welds, leave the gap of mold position between the light-emitting diode chip for backlight unit, employing scribbles the welding position of the mold alignment light-emitting diode chip for backlight unit of release agent, pressurization is positioned on the heat-radiating substrate, then the packaging plastic that contains fluorescent material is injected mould, and extracting vacuum, treat curing and demolding, form the glued membrane that thickness contains fluorescent material uniformly in the upper surface and the side of light-emitting diode chip for backlight unit.Heat-radiating substrate is the metal substrate of silicon substrate or ceramic substrate or tape insulation passivation layer.Packaging plastic is epoxy resin or silica gel.When the light-emitting diode chip was blue chip, contained fluorescent material was the yttrium-aluminium-garnet fluorescent material in the packaging plastic.When the light-emitting diode chip was the ultraviolet light chip, contained fluorescent material was RGB (RGB) fluorescent material in the packaging plastic.
Advantage of the present invention is that the outer surface at light-emitting diode chip for backlight unit forms the uniform phosphor laminate of a thickness, has improved the uniformity of luminance and the consistency of light-emitting diode chip for backlight unit, has improved the production efficiency of encapsulation.
Description of drawings
The encapsulation profile of Fig. 1 silicon substrate of the present invention or ceramic substrate upside-down mounting LED chip;
Fig. 1 b encapsulation profile that contains the metal substrate upside-down mounting LED chip of passivation layer of the present invention;
Fig. 2 lead-in wire bonding of the present invention light-emitting diode chip for backlight unit encapsulation figure;
Fig. 2 b metal substrate lead-in wire bonding light-emitting diode chip for backlight unit encapsulation figure that contains passivation layer of the present invention;
The profile of behind Fig. 2 c light-emitting diode chip for backlight unit encapsulation point of the present invention glue topsheet surface being handled;
Fig. 3 silicon substrate array of figure of posting the light-emitting diode chip for backlight unit array of the present invention;
Fig. 4 non-silicon substrate array of figure of posting the light-emitting diode chip for backlight unit array of the present invention;
Fig. 5 die drawing of the present invention;
Fig. 5 b die profile of the present invention;
Fig. 6 punch die profile of the present invention;
Fig. 7 a LED encapsulation of the present invention demoulding figure;
Fig. 7 b LED encapsulation of the present invention demoulding figure;
Profile behind Fig. 8 a LED encapsulation point of the present invention glue;
Fig. 8 b LED of the present invention uses the profile of scraper plate to the leveling of top layer glue-line when encapsulating;
Structural representation after Fig. 9 LED encapsulation of the present invention.
100 silicon substrates or ceramic substrate, conductor layer on 101 heat-radiating substrates, 102 blue chips, 103 upside-down mounting soldered balls, 104 contain the epoxy glue or the silica gel of fluorescent material, 120 blue chips, 121 upside-down mounting soldered balls, 122 passivation layers, 123 metal substrates, 124 electrodes, 125 contain the epoxy glue or the silica gel of fluorescent material, 200 silicon substrates or ceramic substrate, 201 electrodes, 202 blue chips, 203 lead-in wires, 204 contain the epoxy glue or the silica gel of fluorescent material, 220 insulating passivation layers, 221 blue chips, 222 lead-in wires, 223 contain the epoxy glue or the silica gel of fluorescent material, 224 metal substrates, the glue-line end face of 230 indents, 231 blue chips, 232 lead-in wires, 233 silicon substrates or ceramic substrate, 300 silicon substrates, 301 light-emitting diode chip for backlight unit, 501 mould through holes, 400 non-silicon substrates, 401 light-emitting diode chip for backlight unit, 700 upside-down mounting soldered balls, 701 light-emitting diode chip for backlight unit, 702 heat-radiating substrates, 703 contain the epoxy resin or the colloidal silica of fluorescent material, 704 dies, 705 punch dies, 706 vacuum cups, 710 contain the epoxy resin or the colloidal silica of fluorescent material, 711 light-emitting diode chip for backlight unit, 712 electrodes, 713 silicon substrates or ceramic substrate, 714 dies, 715 punch dies, 800 heat-radiating substrates, 801 electrodes, 802 dies, 803 lead-in wires, 804 contain the silica gel or the epoxy resin of fluorescent material, 805 light-emitting diode chip for backlight unit, 810 scraper plates, 811 contain the fluorescent material glue-line, 812 dies, 813 heat-radiating substrates, 814 light-emitting diode chip for backlight unit, the 815 unnecessary fluorescent powder colloids that contain, 91 colloid upper surface thickness, 92 colloid side thickness
Embodiment
Embodiment 1
Further specify embodiments of the invention below in conjunction with accompanying drawing:
Potting process is as follows: A. is welded to luminescence chip or its array on the heat-radiating substrate of band IC circuit; B. mould is aimed at the location with luminescence chip, and compress; C. in mould, inject an amount of casting glue that contains fluorescent material; D. degasification under vacuum is solidified; E. the demoulding.
Referring to Fig. 1, figure is the structure after the upside-down mounting LED chip encapsulation.Blue chip 102 is fixed on silicon substrate or the ceramic substrate 100 by upside-down mounting soldered ball 103, silicon substrate or ceramic substrate 100 are provided with conductor layer 101, and the outer surface of blue chip 102 has been set up epoxy glue or the silica gel 104 that one deck contains fluorescent material uniformly.
Referring to Fig. 2, figure is the structure after the encapsulation of lead-in wire bonding light-emitting diode chip for backlight unit.Blue chip 202 is connected with electrode 201 by lead-in wire 203, and be bonded and fixed on the heat-radiating substrate 200, and the outer surface of blue chip 202 has been set up epoxy glue or the silica gel 204 that one deck contains fluorescent material uniformly.
Fig. 1 and Fig. 2 are the light-emitting diode chip for backlight unit after the scribing.Fig. 1 is the single-chip type, and Fig. 2 is a multicore sheet type.Because after doing circuit on the heat-radiating substrate, planarization has been carried out on the surface, so at a glue and vacuumizing in the degassing procedure, containing the epoxy glue of fluorescent material or silica gel can not overflow from the bottom surface and pollute pad, because release agent only is coated in the mould medial surface, also avoided pollution simultaneously to pad.
Referring to Fig. 2 c, when figure is the coating of some glue gelatin viscosity is not done the technology requirement, do not use scraper plate that glue-line is handled after having put glue, blue chip 231 is connected with electrode by lead-in wire 232, and be fixed on the heat-radiating substrate 233, the outer surface of blue chip 231 has been set up epoxy glue or the silica gel that one deck contains fluorescent material uniformly, and the glue-line end face caves inward 230.
Referring to Fig. 3, on silicon substrate 300, do circuit layer as requested, the control circuit of multicore sheet is made series circuit.To carry out planarization to the surface after circuit is finished, perhaps on whole base plate, metallize, cut apart according to the circuit needs again, thereby can avoid the combining of causing of out-of-flatness on surface not tight with mould.Then according to the requirement of light-emitting diode chip for backlight unit array, utilize the face-down bonding technique light-emitting diode chip for backlight unit 301 of burn-oning in the relevant position.Lead-in wire bonding scheme is after requiring to do top electrode according to control on the heat-radiating substrate, again planarization is carried out on the surface of heat-radiating substrate, then at corresponding position bonding chip, bonding can adopt high heat conduction Heraeus or lead-free solder or other highly heat-conductive materials, requires the location accurately during the bonding light-emitting diode chip for backlight unit.
Referring to Fig. 4, identical with Fig. 3 situation, but the light-emitting diode chip for backlight unit 401 among the figure is installed on the ceramic substrate 400.Used substrate is ceramic substrate or the metal substrate that contains passivation layer.
Referring to Fig. 5, Fig. 5 b, Fig. 6, the structure of the design consideration mould of punch die and deciding.Mould inner surface scribbles release agent.The casting glue material that needs according to using of selecting for use of release agent is decided.Use fluorosilicone release agent or perfluor release agent among the present invention.The coating of release agent gets final product in the rotation of mould medial surface after adopting hairbrush to soak release agent, then the mould that scribbles release agent is placed hot-air, to remove the moisture in the release agent, according to the light-emitting diode chip for backlight unit position mould is pressed on the substrate, utilize micromatic setting to adjust die location, guarantee the width unanimity of each side of light-emitting diode chip for backlight unit, utilize the high accuracy point gum machine in posting the mould of chip, to put glue.Point glue amount is controlled according to the thickness of fluorescent material on the desired light-emitting diode chip for backlight unit.Point glue process can be finished under vacuum environment, is placed into after perhaps atmosphere mid point glue finishes to vacuumize in the vacuum tank, and the bubble in the colloid is got rid of.
Referring to Fig. 7, when the structure demoulding of upside-down mounting LED chip, hold heat-radiating substrate 702 from the bottom surface with vacuum cup 706, punch die 705 is from top alignment mould further groove, contact contains the surface of the epoxy resin or the silica gel 703 of fluorescent material gently, apply very little downward force f, guarantee fully to contact between punch die 705 and colloid.Punch die 705 sides align with die 704 sides, apply power F upwards from mold periphery then, to slough mould.Because the epoxy resin or colloidal silica 703 sides that have punch die 705 to act directly on to contain fluorescent material, so very little in the knockout course to the influence of the epoxy resin that contains fluorescent material or silica gel 703 and light-emitting diode chip for backlight unit 701.
Referring to Fig. 7 b, when the structure demoulding of lead-in wire bonding light-emitting diode chip for backlight unit 711, hold heat-radiating substrate 713 from the bottom surface with vacuum cup 706 equally, punch die 715 is from top alignment mould further groove, contact contains the surface of the epoxy resin or the silica gel 710 of fluorescent material gently, apply very little downward force f, guarantee fully to contact between punch die 715 and colloid.Punch die 715 sides align with die 714 sides, apply power F upwards from mold periphery then, to slough mould.Because the epoxy resin or colloidal silica 710 sides that have punch die 715 to act directly on to contain fluorescent material, so very little in the knockout course to the influence of the epoxy resin that contains fluorescent material or silica gel 710 and light-emitting diode chip for backlight unit 711.
Structure after the mould point glue as shown in Figure 8, light-emitting diode chip for backlight unit 805 is connected with electrode 801 by lead-in wire 803, light-emitting diode chip for backlight unit 805 bondings are fixed on the heat-radiating substrate 800, around the light-emitting diode chip for backlight unit 805 is die 802, die 802 inner silica gel or the epoxy resin 804 that contain fluorescent material that inject.Referring to Fig. 8.
Fig. 8 b uses the profile of scraper plate to the leveling of top layer glue-line after having controlled the viscosity of glue, when the unnecessary plane, top that fluorescent powder colloid 815 exceeds die 812 that contains, adopt scraper plate 810 to scrape off the unnecessary fluorescent powder 815 that contains, make the thickness that contains fluorescent material glue-line 811 even.Referring to Fig. 8 b.
Fig. 9 is the thickness of fluorescent material glue-line when determining encapsulation according to the size of mould.Fluorescent material glue-line size depends on positioning accuracy and die size.The thickness of concave die has determined colloid upper surface thickness 91, and the width in the hole of concave die has determined colloid side thickness 92.
Embodiment 2
Embodiment 2 is identical with embodiment 1, and different is:
1. the heat-radiating substrate among Fig. 1 b is the metal substrate that contains passivation layer.Blue chip 120 is welded on the electrode 124 by upside-down mounting soldered ball 121, it on the metal substrate 123 passivation layer 122, be electrode 124 on the passivation layer 122, the outer surface of blue chip 120 has been set up epoxy glue or the silica gel 125 that one deck contains fluorescent material uniformly.Referring to Fig. 1 b.
2. Fig. 2 b is lead-in wire bonding light-emitting diode chip for backlight unit encapsulation figure.Its heat-radiating substrate is the metal substrate 224 that contains passivation layer.Light-emitting diode chip for backlight unit 221 is connected with electrode by lead-in wire 222, is insulating passivation layer 220 on the metal substrate 224, on the insulating passivation layer 220 that light-emitting diode chip for backlight unit 221 is bonded and fixed at.The outer surface of light-emitting diode chip for backlight unit chip 221 has been set up epoxy glue or the silica gel 223 that one deck contains fluorescent material uniformly.
Claims (7)
1. the method for packing of a high-brightness white light LED, mainly comprise: light-emitting diode chip for backlight unit, heat-radiating substrate, phosphor laminate, it is characterized in that described at least one light-emitting diode chip for backlight unit that on heat-radiating substrate, welds, employing scribbles the welding position of the mold alignment light-emitting diode chip for backlight unit of release agent, pressurization is positioned on the heat-radiating substrate, then the packaging plastic that contains fluorescent material is injected mould, and extracting vacuum, treat curing and demolding, form the glued membrane that thickness contains fluorescent material uniformly in the upper surface and the side of light-emitting diode chip for backlight unit.
2. the method for packing of a kind of high-brightness white light LED according to claim 1 is characterized in that described heat-radiating substrate is the metal substrate of silicon substrate or ceramic substrate or tape insulation passivation layer.
3. the method for packing of a kind of high-brightness white light LED according to claim 1 is characterized in that leaving between the described light-emitting diode chip for backlight unit gap of mold position.
4. the method for packing of a kind of high-brightness white light LED according to claim 1 is characterized in that described packaging plastic is epoxy resin or silica gel.
5. the method for packing of a kind of high-brightness white light LED according to claim 1 is characterized in that institute's light-emitting diode chip is blue chip or ultraviolet light chip.
6. the method for packing of a kind of high-brightness white light LED according to claim 5, when it is characterized in that described light-emitting diode chip is blue chip, contained fluorescent material is the yttrium-aluminium-garnet fluorescent material in the packaging plastic.
7. the method for packing of a kind of high-brightness white light LED according to claim 5, when it is characterized in that described light-emitting diode chip is the ultraviolet light chip, contained fluorescent material is RGB (RGB) fluorescent material in the packaging plastic.
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