CN202523758U - Wafer structure of light-emitting diode capable of emitting white light directly - Google Patents
Wafer structure of light-emitting diode capable of emitting white light directly Download PDFInfo
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- CN202523758U CN202523758U CN2012201249624U CN201220124962U CN202523758U CN 202523758 U CN202523758 U CN 202523758U CN 2012201249624 U CN2012201249624 U CN 2012201249624U CN 201220124962 U CN201220124962 U CN 201220124962U CN 202523758 U CN202523758 U CN 202523758U
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Abstract
The utility model provides a wafer structure of a light-emitting diode capable of emitting white light directly, which comprises a wafer of a light-emitting diode, metal salient points and a phosphor layer. The wafer structure is characterized in the chip bonding pad of the wafer of the light-emitting diode is provided with electrically connected metal salient points. The chip of the wafer of the light-emitting diode is coated with the phosphor layer. The thickness of the phosphor layer is equal to the height of the metal salient points. The phosphor layer is made of a mixture of yellow fluorescent powders YAG and TAG and epoxy resin, or a mixture of fluorescent powders and silica gel. The structure enables the large-scale LED chip packaging on a wafer and also enables the thickness of the phosphor layer to be uniform. Meanwhile, the structure improves the packaging efficiency and the yield of LEDs capable of emitting white light directly. In addition, the white-light LED chips are good in both spatial color uniformity and overall color temperature consistency.
Description
Technical field
The utility model relates to a kind of LED source, particularly a kind of manufacturing approach of directly sending the light-emitting diode wafer of white light.
Background technology
LED (Light Emitting Diode) is a kind of light emitting semiconductor device of processing based on P-N junction electroluminescence principle; Have advantages such as electro-optical efficiency height, long service life, environmental protection and energy saving, volume be little; Be described as the 21 century green illumination light source; Along with the breakthrough that with the nitride is the third generation semi-conducting material technology of representative, rise rapidly in the whole world based on the semiconductor lighting industry of high-power and high-luminance light-emitting diode (LED), and caused a revolution in the traditional lighting field.LED has begun to be used widely in a lot of fields because its unique advantages, is thought the main developing direction of following lighting technology to have huge market potential by industry.
Large power white light LED is normally mixed by two wavelength light (blue light+sodium yellow) or three-wavelength light (blue light+green light+red light).The white light LEDs that extensively adopts at present is to form through blue led chip (GaN) and yellow fluorescent powder (YAG or TAG).How much patterns of phosphor powder layer in LED encapsulation, parameters such as concentration and thickness have a strong impact on important optical properties such as the light extraction efficiency, colour temperature, spatial color uniformity of LED; In order to obtain the LED product of favorable optical performance, the realization technology of phosphor powder layer is very crucial.
Present LED packaging technology is that the chip that obtains from LED wafer cutting is fixed on substrate or above the support, realizes earlier being electrically connected, and the mixture of fluorescent material and epoxy resin or silica gel is coated to around the led chip formation phosphor powder layer again.In this packaging technology flow process; Because phosphor gel viscosity is very big; The phosphor gel amount is different often between different package modules in the process that applies fluorescent material, and this will cause encapsulating photochromic the altering a great deal of LED product that obtains, and influence consistency of product; And owing to surpass certain limit when colour temperature, the LED product can not use, and institute is not so that the rate of finished products of LED is very high, and the direct result that low rate of finished products is brought is the cost that the increase user uses the LED product.And phosphor gel generally is to be coated onto around the LED through point in encapsulation process, forms ball cap shape fluorescent material pattern, and this pattern will cause the spatial color of LED product inhomogeneous, and this will influence the illumination comfort of LED product user.The New LED fluorescent powder coating technique be must develop for this reason, the low colour temperature consistency of present packaging technology, low rate of finished products and the not high defective of spatial color uniformity overcome.
Summary of the invention
The purpose of the utility model is to the defective that exists in the prior art, and a kind of manufacturing approach of directly sending the light-emitting diode wafer of white light is provided.The utility model comprises: light-emitting diode wafer, metal salient point, phosphor powder layer; It is characterized in that on the chip bonding pad of light-emitting diode wafer, being manufactured with the electrical connection metal salient point; Be coated with the layer of fluorescent powder layer on the chip of light-emitting diode wafer; Its thickness is identical with the height of metal salient point, and phosphor powder layer is the fluorescent material of yellow fluorescent powder YAG and TAG and the mixture of epoxy resin or fluorescent material and silica gel.
Said phosphor powder layer places the gap that is electrically connected between metal salient point upper flat plate anchor clamps and the wafer to form through the fluorescent material of filling yellow fluorescent powder YAG and TAG and the mixture of epoxy resin or fluorescent material and silica gel for utilizing.The electrical connection metal salient point that phosphor powder layer is made on the chip bonding pad of light-emitting diode wafer earlier in manufacturing process; Utilize a plate jig, plate jig is fitted on the salient point, make and form a gap between plate jig and the wafer; Through the gap between external device (ED) control wafer and the anchor clamps; Make the height in gap consistent, in the gap, fill full fluorescent material and epoxy resin or fluorescent material and silica-gel mixture, the filler in the heating cure gap then; Peel off plate jig, accomplish and make.The process of in to the gap, filling fluorescent material and epoxy resin is to utilize capillary pumped process filling between the gap, or utilizes ambient pressure initiatively to fill.
Said light-emitting diode wafer is formal dress or upside-down mounting or vertical stratification.
Being shaped as of metal salient point on the said light-emitting diode wafer cylindrical or spherically planted ball and electroplate to be made through silk screen printing, wire bonder, and the metal salient point material is plumber's solder or electric conducting materials such as gold or copper or nickel.
The utility model has the advantages that and on wafer, realize large-scale led chip encapsulation and can keep the phosphor powder layer consistency of thickness; Improved the LED packaging efficiency and the rate of finished products of direct output white light, made led chip have good spatial color uniformity and whole colour temperature consistency.
Description of drawings
The structural representation of the electrical connection salient point of making on the LED wafer of Fig. 1 embodiment one;
The structural representation of fillers such as the filling fluorescent material in the gap of Fig. 2 embodiment one;
The structural representation of peeling off plate jig of Fig. 3 embodiment one;
The structural representation of the coated LED wafer of the cutting of Fig. 4 embodiment one;
The structural representation of the electrical connection salient point of making on the LED wafer of Fig. 5 embodiment two;
The structural representation of fillers such as the filling fluorescent material in the gap of Fig. 6 embodiment two;
The structural representation of peeling off plate jig of Fig. 7 embodiment two;
The structural representation of the electrical connection salient point of making on the LED wafer of Fig. 8 embodiment three;
The structural representation of fillers such as the filling fluorescent material in the gap of Fig. 9 embodiment three;
The structural representation of peeling off plate jig of Figure 10 embodiment three.
Among the figure: 11LED wafer, 12 is electrically connected in metal salient points, 13 plate jigs, 14 coating devices, 15 phosphor gel, 16 phosphor powder layers, 17 White-light LED chips, 21 anchor clamps hard material, 31 injection devices in soft material, 22 anchor clamps.
Embodiment
Embodiment one
Further specify the embodiment of the utility model below in conjunction with accompanying drawing:
Referring to Fig. 1, on LED wafer 11, on bonding pads, make cylindrical copper electrical connection metal salient point 12 through electroplating technology and photoetching process, cylindrical salient point is diameter 50 μ m, high 100 μ m.Referring to Fig. 2; The plate jig 13 of homogenous material is fitted on the cylindrical electrical connection metal salient point 12, forms the gap between plate jig 13 and the LED wafer 11, and the gap between control wafer and the anchor clamps; Make the height in gap consistent; Plate jig 13 is fitted on the cylindrical electrical connection metal 12, surface smoothness that plate jig 13 maintenances are very high and very little surface roughness, and phosphor gel 15 is coated in the gap between plate jig 13 and the LED wafer 11 through 14 of coating devices; Phosphor gel 15 will be under the effect of capillary suction force flows into along the gap, to be filledly whole device is put into 120 ℃ baking box after full and solidifies.Referring to Fig. 3, treat fluorescent material, after 15 curing are accomplished, on the chip of light-emitting diode wafer 11, form layer of fluorescent powder layer 16, its thickness is identical with the height of metal salient point, then, plate jig 13 is peeled off from phosphor powder layer 16.Participate in Fig. 4, cut coated LED wafer 11 and obtain single White-light LED chip 17, the uncoated phosphor gel of cylindrical electrical connection metal salient point 12 upper surfaces on the White-light LED chip 17, the solder joint of the lead-in wire bonding of encapsulation after will being used for.
Concrete manufacturing approach and step are: at first on the chip bonding pad of LED wafer 11, make being electrically connected metal salient point 12; Use a plate jig 13 to be fitted in and be electrically connected on the metal salient point 12; Between LED wafer 11 and plate jig 13, form the gap, and guarantee that through external device (ED) clearance height is consistent; Then the mixture of fluorescent material and epoxy resin or fluorescent material and silica gel is filled the gap between full LED wafer 11 and the plate jig 13 through a coating device 14; Last heating cure is filled in the phosphor gel in the gap; After treating completion of cure, plate jig 13 breaks away from fluorescent material glue-line 16, has made the LED wafer of electrode and coated phosphor powder layer through cutting; Obtain White-light LED chip 17, and be used for follow-up encapsulation.
The used LED wafer of present embodiment can be the wafer of formal dress, upside-down mounting or vertical stratification;
Present embodiment used metal salient point material on the LED wafer is a plumber's solder.Also can adopt the metallic conduction material of gold or copper or nickel, the shape of metal salient point can be cylindrical, sphere etc., and manufacture craft is planted ball and plating etc. through silk screen printing, wire bonder.
The used plate jig of present embodiment is that homogeneous material is made, and homogeneous material is soft material or hard material.Plate jig also can adopt composite material to make, and composite material is that soft material and hard material bonding form.
Phosphor material powder is YAG and TAG in the phosphor gel, and the glue material is an epoxy resin, silica gel and spin-coating glass etc.
Embodiment two
Embodiment two is identical with embodiment one, and different is on LED wafer 11, on bonding pads, to make the spherical metal salient point 12 that is electrically connected through ball attachment machine, and salient point is diameter 100 μ m, referring to Fig. 5.Composite material flat plate anchor clamps 13, for one deck soft material 21 and hard material 22 are composited, the plate jig soft material is fitted on the spherical solder salient point; Through applying certain active force; Soft material will wrap up a part of soldered ball, phosphor gel 15 through 14 of coating devices be coated in plate jig and wafer gap around, phosphor gel will be along under the effect of capillary suction force, flowing in the gap; To be filledly whole device is put into 120 ℃ baking box after full and solidify, referring to Fig. 6.After treating that phosphor gel is solidified completion, plate jig is peeled off from phosphor powder layer 16.Follow-up cutting technique is identical with embodiment one, participates in Fig. 7.
Embodiment three
Embodiment three is identical with embodiment one, and different is on LED wafer 11, on bonding pads, to make the spherical metal salient point 12 that is electrically connected through ball attachment machine, and salient point is diameter 100 μ m; Referring to Fig. 8, composite material flat plate anchor clamps 13 are for one deck soft material 21 and hard material 22 are composited; The plate jig soft material is fitted on the spherical metal salient point 12; Through applying certain active force, soft material will wrap up a part of soldered ball, and phosphor gel 15 is injected plate jig and wafer gap through injection device 31; To be filledly whole device is put into 120 ℃ baking box after full and solidify, referring to Fig. 9.After treating that phosphor gel is solidified completion, plate jig is peeled off from phosphor powder layer 16, participated in Figure 10.Follow-up cutting technique is identical with embodiment one.
Claims (4)
1. light-emitting diode wafer structure of directly sending white light; Comprise: light-emitting diode wafer, metal salient point, phosphor powder layer; It is characterized in that on the chip bonding pad of light-emitting diode wafer, being provided with the electrical connection metal salient point; Be coated with the layer of fluorescent powder layer on the chip of light-emitting diode wafer, its thickness is identical with the height of metal salient point.
2. the light-emitting diode wafer structure of directly sending white light according to claim 1 is characterized in that said light-emitting diode wafer is formal dress or upside-down mounting or vertical stratification.
3. the light-emitting diode wafer structure of directly sending white light according to claim 1, it is characterized in that said electrical connection metal salient point be shaped as through silk screen printing, wire bonder plant ball and electroplate to make cylindrical or spherical.
4. the light-emitting diode wafer structure of directly sending white light according to claim 1 is characterized in that said phosphor powder layer places the gap that is electrically connected between metal salient point upper flat plate anchor clamps and the wafer to form through filling for utilizing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201249624U CN202523758U (en) | 2012-03-28 | 2012-03-28 | Wafer structure of light-emitting diode capable of emitting white light directly |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012201249624U CN202523758U (en) | 2012-03-28 | 2012-03-28 | Wafer structure of light-emitting diode capable of emitting white light directly |
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| CN202523758U true CN202523758U (en) | 2012-11-07 |
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| CN2012201249624U Expired - Fee Related CN202523758U (en) | 2012-03-28 | 2012-03-28 | Wafer structure of light-emitting diode capable of emitting white light directly |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979432A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Technologies of packaging LED chip directly emitting white light |
| CN112993133A (en) * | 2020-10-22 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Display device and manufacturing method thereof |
-
2012
- 2012-03-28 CN CN2012201249624U patent/CN202523758U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979432A (en) * | 2014-04-08 | 2015-10-14 | 刘胜 | Technologies of packaging LED chip directly emitting white light |
| CN112993133A (en) * | 2020-10-22 | 2021-06-18 | 重庆康佳光电技术研究院有限公司 | Display device and manufacturing method thereof |
| CN112993133B (en) * | 2020-10-22 | 2022-07-22 | 重庆康佳光电技术研究院有限公司 | Display device and manufacturing method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121107 Termination date: 20210328 |