CN102593327A - Inverted packaging technology for wafer-level LED - Google Patents
Inverted packaging technology for wafer-level LED Download PDFInfo
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- CN102593327A CN102593327A CN2012100725740A CN201210072574A CN102593327A CN 102593327 A CN102593327 A CN 102593327A CN 2012100725740 A CN2012100725740 A CN 2012100725740A CN 201210072574 A CN201210072574 A CN 201210072574A CN 102593327 A CN102593327 A CN 102593327A
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Abstract
The invention discloses an inverted packaging technology for a wafer-level LED. The technology comprises the following steps: fluorescent powder glue is coated on the back side of an LED wafer; the wafer with a fluorescent powder coating is divided into individual chips; the LED chips with front side facing downwards are arranged on a baseplate; and the chips and the baseplate are welded and fixed through chip soldering points and are sealed by glue through irrigation. The packaging technology provided by the invention has the advantages that the wafer-level fluorescent powder coating is uniform in thickness, so that the wavelength distribution and color of light given out by the different chips are ensured to be consistent; and besides, the fluorescent powder glue can be coated on the LED wafer at one time, the coating technology for individual chips is avoided, and the production efficiency is improved.
Description
Technical field
The present invention relates to a kind of wafer level Light-Emitting Diode flip-chip packaged technology.
Background technology
Coating phosphor gel coating is one of main method that changes chip light-emitting wavelength and color on light-emitting diode chip for backlight unit.For example the white-light illuminating scheme of light-emitting diode commonly used is the phosphor gel that coating excites gold-tinted on blue LED chip, the synthetic white light that forms of the part gold-tinted that blue light that chip sends and fluorescent material excite.It is inhomogeneous that the problem of the fluorescent coating of current chip surface is that traditional colloid drops is coated with the coating layer thickness that technology produces, and the coating process efficient of single chip is low.Be to drip the phosphor gel that is coated with can from the side flow of chip to substrate, also can further flow to the gap between chip and the substrate to a problem of flip-chip in addition.Fig. 1 is a traditional chip package process flow process, and the liquid macromolecule glue that contains fluorescent material drips the central authorities that the method that is coated with or sprays stacks chip through needle tubing, and phosphor gel flows and covers the surface and the side of chip then.Fluorescent coating thickness amasss with stacking colloid, and factors such as the coefficient of viscosity are relevant.It is not the good technology of repeatability that needle tubing drips the method that is coated with, and causes the variable thickness of phosphor gel the inconsistent of chip light color of making peace easily.In addition, it is long that single chip carries out the time that the coating of fluorescent material needle tubing needs, and is one of bottleneck of process efficiency.
Summary of the invention
Technical problem to be solved by this invention is, overcomes the above-mentioned shortcoming of prior art, and a kind of wafer level Light-Emitting Diode flip-chip packaged technology is provided.
In order to solve above technical problem, wafer level Light-Emitting Diode flip-chip packaged technology provided by the invention comprises the steps:
The first step, make the chip pad in the front of Light-Emitting Diode disk;
Second step, at the back side of Light-Emitting Diode disk coating phosphor gel and being cured, make the back side of Light-Emitting Diode disk form the uniform fluorescent coating of one deck thickness;
The 3rd step, cutting Light-Emitting Diode disk form a plurality of light-emitting diode dies;
The 4th goes on foot, the Light-Emitting Diode chip front side is positioned on the substrate down, through the fixing also sealant pouring and sealing of chips welding point and substrate welding.
Technology of the present invention is opposite with conventional package technology; Need coating phosphor gel earlier; The present invention is coated with the layer of even phosphor gel on the light-emitting diode disk; Phosphor gel solidify to form fluorescent coating then, improves the uniformity of fluorescent coating thickness on the single chip, cuts disk again and becomes a plurality of chips.Be coated with the layer of fluorescent powder coating on the chip after the cutting, exempted in the traditional handicraft phosphor gel of single chip and dripped and be coated with, practiced thrift the process time greatly, and reduced production cost; In the technology of the present invention, phosphor gel directly is coated on the disk back side of light-emitting diode, and coating efficiency is higher.
In second step of technology of the present invention, said phosphor gel is coated the back side of Light-Emitting Diode disk through the mode of rotary coating, spraying or press mold.
Substrate is different dorsad with the PN utmost point active face that is coated with fluorescent material in the lead-bonding chip encapsulation, and the active face in the Flip-Chip Using turns around, and towards substrate, fluorescent material is coated on the passive back side of chip through solder joint.To the wafer level fluorescent material coating process of flip-chip, the convenient part of technology is that the passive back side of chip does not have electrode, need not corrode the fluorescent coating patterning.The disadvantage of technology is that the disk front has numerous electrode salient point (being made up of au bump or scolder), and the mechanical fixation to disk in the technical process has certain difficulty.Specifically can adopt following means to realize:
Scheme a: in said second step, Light-Emitting Diode disk face down is positioned on the flat board with the high viscose glue of thin layer, said planar vacuum is adsorbed on the rotating platform, is rotated coating.
Scheme b: in said second step; Light-Emitting Diode disk face down is placed on the flat board; Use uncured thick high polymer binder to fill up the gap between Light-Emitting Diode disk front and the flat board fully; Said planar vacuum is adsorbed on the rotating platform, is rotated the coating phosphor gel, and binding agent again that the Light-Emitting Diode disk is positive after the phosphor gel coating finishes is removed.
Above-mentioned two kinds of schemes are respectively applied for when solving the coating phosphor gel, the problem that disk is difficult to fix.
In order to make the chip sides also can be luminous, technology of the present invention also be coated with fluorescent coating in the side of Light-Emitting Diode disk.
Concrete implementation method is in the improvement on the aforementioned technology basis: carried out before said second step; Earlier the Light-Emitting Diode disk is cut (utilizing the emery wheel or the laser beam cutting of broad); When carrying out the said second step coating phosphor gel, make between the slit of Light-Emitting Diode disk and also fill phosphor gel; Carry out the said the 3rd and go on foot when cutting the Light-Emitting Diode disk, cut (with narrower emery wheel or laser beam), make the side of Light-Emitting Diode disk keep the layer of fluorescent powder coating along the slit central authorities of Light-Emitting Diode disk.
Through the wafer level Light-Emitting Diode that this method produces, the side of its chip is coated with the uniform fluorescent coating of a layer thickness, can excite the chip sidelight, improves the overall launching efficiency of fluorescent material.
Advantage of the present invention is to adopt wafer level technology, and the fluorescent material coating of a plurality of chips is once accomplished, and process efficiency is high.Wafer level chip coating layer thickness is even simultaneously, the color of chip light-emitting and the high conformity of colour temperature.
Description of drawings
Below in conjunction with accompanying drawing the present invention is further described.
Fig. 1 is a traditional round chip level Light-Emitting Diode flip-chip packaged process chart.
Fig. 2 is the embodiment of the invention 1 process chart.
Fig. 3 is the part process chart of the embodiment of the invention 2.
Embodiment
Embodiment 1
As shown in Figure 2, embodiment of the invention wafer level Light-Emitting Diode flip-chip packaged technology comprises the steps:
4a---the front at the Light-Emitting Diode disk makes the chip pad.
4b---the coating phosphor gel and being cured at the back side of Light-Emitting Diode disk makes the back side of Light-Emitting Diode disk form the uniform fluorescent coating of one deck thickness.
The coating process of phosphor gel has methods such as rotary coating, spraying, press mold.Usually in the spin coating process process, disk passes through vacuum suction on rotating platform.Numerous electrode salient point (chips welding point) is arranged on the flip-chip disk, cannot vacuum suction to rotating platform.Therefore can be with being placed on the flat board with the high viscose glue of thin layer of disk face down, flat board again vacuum suction on rotating platform.Another method is to use uncured thick high polymer binder to fill up the gap between disk front and the flat board fully, and binding agent again that disk is positive after fluorescent material coating in the back side finishes is removed.
4c---cutting Light-Emitting Diode disk forms a plurality of light-emitting diode dies.
Cutting method also comprises emery wheel cutting and laser cutting etc.Same critical technological point is that numerous electrode salient point (chips welding point) is arranged on the disk; If there is the disk of the salient point normally used low-viscosity disk dicing tape (wafer dicing tape) of putting upside down in the front; Salient point and tape contact face are long-pending fewer; Bonding force is not enough, and chip breaks away from adhesive tape easily during cutting.The way that improves is to use the disk cutting film of high viscosity.
4d---the Light-Emitting Diode chip front side is positioned on the substrate down, through the fixing also sealant pouring and sealing of chips welding point and substrate welding.
In this step, chip is connected on the substrate through metal salient point (chips welding point), on chip, stacks fluid sealant, final curing fluid sealant then.
Embodiment 2
In order to make chip sides also luminous, present embodiment also is coated with fluorescent coating in the side of Light-Emitting Diode disk.The ratio of the light that chip sends from the side is relevant with chip kind and size.To the vertical chip of 1 millimeter, 15% sidelight is arranged approximately.To the horizontal chip of same size, sidelight has 30% approximately.To the chip of several millimeters sizes, sidelight may be reduced to below 10% of total light flux.
The implementation method of this structure ties up to the improvement on the embodiment 1 technology basis.As shown in Figure 3, comprise the steps:
5a---the front at the Light-Emitting Diode disk makes the chip pad;
5b---the Light-Emitting Diode disk is cut (utilizing the emery wheel or the laser beam cutting of broad);
5c---in Light-Emitting Diode disk back side coating phosphor gel, make between the slit of Light-Emitting Diode disk and also fill phosphor gel, and solidify fluorescent material;
5d---(with narrower emery wheel or laser beam) central authorities cut in the slit of Light-Emitting Diode disk, make the side of Light-Emitting Diode disk keep the layer of fluorescent powder coating;
Then carry out the 4d step among the embodiment 1, repeat no more here.
Except that the foregoing description, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of requirement of the present invention.
Claims (5)
1. wafer level Light-Emitting Diode flip-chip packaged technology comprises the steps:
The first step, make the chip pad in the front of Light-Emitting Diode disk;
Second step, at the back side of Light-Emitting Diode disk coating phosphor gel and being cured, make the back side of Light-Emitting Diode disk form the uniform fluorescent coating of one deck thickness;
The 3rd step, cutting Light-Emitting Diode disk form a plurality of light-emitting diode dies;
The 4th goes on foot, the Light-Emitting Diode chip front side is positioned on the substrate down, through the fixing also sealant pouring and sealing of chips welding point and substrate welding.
2. according to the manufacturing process of the said wafer level Light-Emitting Diode of claim 1 flip-chip packaged structure, it is characterized in that: in second step, said phosphor gel is coated the back side of Light-Emitting Diode disk through the mode of rotary coating, spraying or press mold.
3. according to the manufacturing process of the said wafer level Light-Emitting Diode of claim 1 flip-chip packaged structure; It is characterized in that: in said second step; Light-Emitting Diode disk face down is positioned on the flat board with the high viscose glue of thin layer, and said planar vacuum is adsorbed on the rotating platform, is rotated coating.
4. according to the manufacturing process of the said wafer level Light-Emitting Diode of claim 1 flip-chip packaged structure; It is characterized in that: Light-Emitting Diode disk face down is placed on the flat board; Use uncured thick high polymer binder to fill up the gap between Light-Emitting Diode disk front and the flat board fully; Said planar vacuum is adsorbed on the rotating platform, is rotated the coating phosphor gel, and binding agent again that the Light-Emitting Diode disk is positive after the phosphor gel coating finishes is removed.
5. according to the manufacturing process of each said wafer level Light-Emitting Diode flip-chip packaged structure of claim 1-4; It is characterized in that: carried out before said second step; Earlier the Light-Emitting Diode disk is cut; When carrying out the said second step coating phosphor gel, make between the slit of Light-Emitting Diode disk and also fill phosphor gel; Carry out the said the 3rd and go on foot when cutting the Light-Emitting Diode disk, cut, make the side of Light-Emitting Diode disk keep the layer of fluorescent powder coating along the slit central authorities of Light-Emitting Diode disk.
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| CN2012100725740A CN102593327A (en) | 2012-03-19 | 2012-03-19 | Inverted packaging technology for wafer-level LED |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367606A (en) * | 2013-07-09 | 2013-10-23 | 北京半导体照明科技促进中心 | Method for manufacturing light emitting diode chip |
| CN103400922A (en) * | 2013-07-29 | 2013-11-20 | 深圳市天电光电科技有限公司 | White-light LED (Light-Emitting Diode) light emitting structure and manufacturing method thereof |
| WO2014063637A1 (en) * | 2012-10-25 | 2014-05-01 | 苏州东山精密制造股份有限公司 | Cob led module and manufacturing method thereof |
| CN104269491A (en) * | 2014-09-16 | 2015-01-07 | 立达信绿色照明股份有限公司 | LED chip packaging method and LED packaging structure using same |
| CN108807303A (en) * | 2018-05-17 | 2018-11-13 | 江苏如高第三代半导体产业研究院有限公司 | A kind of wafer stage chip grade CSP encapsulating structures of single side light extraction and preparation method thereof |
| WO2019120309A1 (en) * | 2017-12-22 | 2019-06-27 | 海迪科（南通）光电科技有限公司 | Wafer-level chip scale package (csp) structure and preparation method therefor |
| CN110350069A (en) * | 2013-07-24 | 2019-10-18 | 晶元光电股份有限公司 | Luminous die and correlation technique comprising wavelength conversion material |
| WO2019219095A1 (en) * | 2018-05-17 | 2019-11-21 | 海迪科（南通）光电科技有限公司 | Integrated led packaging form which uses wlp, and preparation method therefor |
| CN110610928A (en) * | 2018-06-15 | 2019-12-24 | 海迪科（南通）光电科技有限公司 | Integrated LED packaging form using WLP and preparation method thereof |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014063637A1 (en) * | 2012-10-25 | 2014-05-01 | 苏州东山精密制造股份有限公司 | Cob led module and manufacturing method thereof |
| CN103367606B (en) * | 2013-07-09 | 2016-06-01 | 北京半导体照明科技促进中心 | Manufacture the method for light-emitting diode chip for backlight unit |
| CN103367606A (en) * | 2013-07-09 | 2013-10-23 | 北京半导体照明科技促进中心 | Method for manufacturing light emitting diode chip |
| CN110350069B (en) * | 2013-07-24 | 2023-06-30 | 晶元光电股份有限公司 | Light emitting die including wavelength conversion material and method of making same |
| CN110350069A (en) * | 2013-07-24 | 2019-10-18 | 晶元光电股份有限公司 | Luminous die and correlation technique comprising wavelength conversion material |
| CN103400922A (en) * | 2013-07-29 | 2013-11-20 | 深圳市天电光电科技有限公司 | White-light LED (Light-Emitting Diode) light emitting structure and manufacturing method thereof |
| CN104269491A (en) * | 2014-09-16 | 2015-01-07 | 立达信绿色照明股份有限公司 | LED chip packaging method and LED packaging structure using same |
| CN104269491B (en) * | 2014-09-16 | 2017-05-31 | 漳州立达信光电子科技有限公司 | The method for packing of LED chip and the LED encapsulation structure using the method for packing |
| WO2019120309A1 (en) * | 2017-12-22 | 2019-06-27 | 海迪科（南通）光电科技有限公司 | Wafer-level chip scale package (csp) structure and preparation method therefor |
| CN108807303A (en) * | 2018-05-17 | 2018-11-13 | 江苏如高第三代半导体产业研究院有限公司 | A kind of wafer stage chip grade CSP encapsulating structures of single side light extraction and preparation method thereof |
| WO2019219095A1 (en) * | 2018-05-17 | 2019-11-21 | 海迪科（南通）光电科技有限公司 | Integrated led packaging form which uses wlp, and preparation method therefor |
| CN110610928A (en) * | 2018-06-15 | 2019-12-24 | 海迪科（南通）光电科技有限公司 | Integrated LED packaging form using WLP and preparation method thereof |
| CN113497174A (en) * | 2020-03-20 | 2021-10-12 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
| CN113497174B (en) * | 2020-03-20 | 2023-05-23 | 东莞市中麒光电技术有限公司 | Small-spacing LED display screen module and manufacturing method thereof |
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Application publication date: 20120718 |