WO2019219095A1 - Integrated led packaging form which uses wlp, and preparation method therefor - Google Patents

Integrated led packaging form which uses wlp, and preparation method therefor Download PDF

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WO2019219095A1
WO2019219095A1 PCT/CN2019/095301 CN2019095301W WO2019219095A1 WO 2019219095 A1 WO2019219095 A1 WO 2019219095A1 CN 2019095301 W CN2019095301 W CN 2019095301W WO 2019219095 A1 WO2019219095 A1 WO 2019219095A1
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wlp
package
layer
chip
concentration
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PCT/CN2019/095301
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French (fr)
Chinese (zh)
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何佳琦
王书昶
孙智江
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海迪科（南通）光电科技有限公司
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Priority claimed from CN201810618432.7A external-priority patent/CN110610928A/en
Application filed by 海迪科（南通）光电科技有限公司 filed Critical 海迪科（南通）光电科技有限公司
Publication of WO2019219095A1 publication Critical patent/WO2019219095A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the invention belongs to the technical field of semiconductor packaging, and particularly relates to an integrated LED package form using WLP and a preparation method thereof.
  • LEDs Light-emitting diodes
  • LEDs have the advantages of small size, long service life, energy saving, fast response, and durability. They are widely used in automotive and indoor lighting, traffic lights, screen displays and LCD backlights. They are ideal for replacing traditional light sources. light source. With the improvement of people's quality of life requirements, the color light source with good light type, high optical density, high light efficiency and adaptability to various situations has gradually become a hot spot of attention.
  • the chip and the substrate cannot be accurately attached during the packaging process, and the phosphor has a low bin rate and a light defect.
  • the conventional SMD, COB and filament lamps and other light source packaging methods are limited by the defects of the packaging method of the light-emitting chip itself, and it is easy to cause unevenness of the emitted mixed light, complicated solid crystal, difficult heat dissipation, and light leakage on the side of the chip. It is even more difficult to make a tunable temperature luminaire.
  • a new type of WLP package structure can effectively solve the problem of cumbersome process and high cost caused by high difficulty in powder spraying and poor uniformity of conventional CSP packaged devices.
  • the WLP package structure has a simple packaging process, and the segmentation and mounting are relatively accurate. However, there is a problem that the surface of the WLP package has no phosphor layer and thus leaks blue light. Therefore, a packaging method capable of applying the novel WLP package structure is developed to solve WLP's own package defects, thereby reducing production cost, improving device heat dissipation performance, improving reliability and uniformity, and achieving higher precision color temperature adjustable LED package structure. It is very necessary.
  • the technical problem to be solved by the present invention is to provide a high-precision integrated LED package method capable of applying a novel WLP package structure, reducing device fabrication cost, and improving device reliability and uniformity, and a preparation method thereof.
  • the technical solution of the present invention is: an integrated LED package form using WLP, including a package substrate, a WLP package structure and an outermost package layer which are sequentially arranged from bottom to top, and the innovation is:
  • the WLP package structure in the outermost encapsulation layer is plural, and the light-emitting surface is the same.
  • Each WLP package structure includes an LED chip and a single-concentration phosphor layer covering the top surface of the chip, the phosphor layer and the outermost encapsulation layer. Have different phosphor concentrations or different materials.
  • the preparation method comprises the following steps:
  • Step S1 performing a sampling test on the LED wafer
  • Step S2 performing step S21 or step S22 on selecting a portion of the wafer that has passed the sampling in step S1;
  • the step S21 is specifically spraying a layer of phosphor powder directly on the top surface of the wafer that is qualified in the step S1, and then performing film coating, and cutting and dicing the wafer after the film is formed to form an independent chip intermediate.
  • the body is then expanded in a single direction or in both directions.
  • the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate, and is expanded in the middle of the chip in the single direction or both directions. Forming a fillable gap between the bodies; covering the side of the chip intermediate at the fillable gap with the reflective adhesive layer;
  • the step S22 is specifically for filming the wafers that have passed the sampling in the step S1, and cutting and dicing the wafer after the filming to form an independent chip intermediate, and the top surface of the entire wafer is flanked after the lobes. Spraying a layer of phosphor powder on the surface, and then performing bidirectional diffusion. After the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate;
  • Step S3 baking and solidifying the entire wafer after the step S2 is performed, and then performing chip test, sorting, and rearranging to obtain an LED chip having a top surface covered with a single-concentration phosphor layer and having the same light-emitting surface, that is, having a WLP package structure of a single concentration phosphor layer;
  • Step S4 soldering one or more WLP package structures having the same light-emitting surface to the package substrate;
  • Step S5 Encapsulating a plurality of WLP package structures in the same outermost package layer to complete the package.
  • the top surface and the side surface of the plurality of WLP package structures rearranged in step S3 are integrally coated with a second-concentration fluorescent layer which is translucent or transparent, and is cured after baking.
  • the chip is again divided to form a WLP package structure having a single concentration phosphor layer and a second concentration phosphor layer.
  • the sidewall of the WLP package structure can selectively coat the reflective adhesive layer.
  • the package substrate is selected from a COB light source package substrate, a bracket on the SMD tape, or a straight/crimped filament.
  • the LED chip in the WLP package structure is any one of a formal structure chip, a flip chip structure, or a vertical structure chip.
  • the WLP package structure may select two or more different high and low color temperature package forms, and form a color temperatureable LED package structure with the outermost package layer.
  • the outermost encapsulation layer is a fluorescent layer
  • the phosphor layer has a phosphor concentration lower than that of the WLP phosphor layer
  • the outermost encapsulation layer encapsulates the WLP package structure to form a WL-COB type LED package.
  • the outermost encapsulation layer is injection molded of a PPA or epoxy resin material, and the outermost encapsulation layer encapsulates the WLP package structure to form a WL-SMD type LED package.
  • the outermost encapsulation layer is a fluorescent layer completely wrapped on a straight strip or a crimped filament strip, and the phosphor layer has a phosphor concentration lower than that of the WLP phosphor layer, and the outermost encapsulation layer is WLP packaged. After the structure is packaged, a WL-filament type LED package form is formed.
  • the invention utilizes the integrated LED package form of WLP, wherein the majority of the heat of the WLP package structure is absorbed by the large particle-precipitated phosphor sprayed once, and the outermost package layer is hardly affected by the heat dissipation of the light-emitting chip, and the colloid is reduced. Cracking occurs; the sprayed phosphor layer is non-transparent but the contour is basically the same as the chip, which can accurately perform subsequent processes such as die bonding and electrode alignment, reducing the process difficulty and further reducing the device fabrication cost; while the conventional CSP package film layer is thicker.
  • the heat dissipation is poor, the high temperature and high humidity, the silicone is not good in air tightness, easy to drop powder, easy to introduce bubbles, and since only the surface of the phosphor can be seen, the chip and the pad cannot be accurately positioned, and leakage is easy to occur, and the reliability of open circuit is at risk. .
  • the invention utilizes the integrated LED package form of WLP, wherein the WLP package structure only has a top surface covered with a thin layer of phosphor, and the light uniformity is better; the outermost encapsulation layer supplements the WLP primary spray phosphor, which can effectively make up The problem of blue light leakage on the sidewall; the outer layer of reflective glue protects the underlying phosphor layer, and by covering different sides, single-sided light emission, three-sided light output or five-sided light output is applicable to different scenes, and the application range is wide; Due to the uniformity of phosphor distribution, thickness and side luminescence, the CSP package is difficult to control. The rate of one shot is low, and the thickness of the CSP is inconsistent due to chip placement and cutting error, which affects the uniformity of the side light output, resulting in unsatisfactory light pattern. .
  • the invention utilizes WLP integrated LED package form, has smaller package size, wider application range, higher packaging processing efficiency, easier realization of miniaturization and integration of light source, and simple and stable process flow.
  • the device yield is greatly improved, which is beneficial to realize an LED package structure with adjustable color temperature.
  • 1 is a schematic cross-sectional view of an embodiment of an integrated LED package using WLP.
  • FIG. 2 is a schematic cross-sectional view of a WLP package structure of FIG. 1.
  • FIG. 3 is a schematic cross-sectional view of another WLP package structure of FIG. 1.
  • FIG. 4 is a top plan view of a WL-COB type LED package of the present invention.
  • FIG. 5 is a top plan view of a WL-SMD type LED package form of the present invention.
  • FIG. 6 is a top plan view of a WL-filament type LED package of the present invention.
  • Figure 7 is a top plan view of a conventional color gradable filament strip package.
  • the WLP package structure can adopt two structures.
  • the first structure as shown in FIG. 2, includes the LED chip 21 and a single-concentration fluorescent film covering the top surface of the chip.
  • the second structure is a WLP package structure having a single concentration phosphor layer and a second concentration phosphor layer, that is, a WLC package structure derived from a WLP package structure, as shown in FIG. 3, including the LED chip 21 and covering
  • the single-concentration phosphor layer 22 on the top surface of the chip forms a WLP package structure, and the second concentration phosphor layer 23 is translucent or transparently coated on the top surface and the side surface of the WLP package structure.
  • the WL-COB type LED package form of the embodiment includes a COB light source package substrate 1, a WLP package structure 2 and an outermost fluorescent seal layer 3 which are sequentially arranged from bottom to top; wherein, the WLP package structure 2 As shown in FIG. 2, the LED chip 21 and the single-concentration phosphor layer 22 are disposed in this order from the inside to the outside.
  • the LED chip 21 in the WLP package structure 2 of the present embodiment may be any one of a positive-mounted structure chip, a flip-chip structure chip or a vertical structure chip, and the arrangement of the LED chips 21 is not limited to a matrix and a dot matrix or a ring array. According to the actual scene, it needs to be flexibly arranged to uniformly emit light.
  • the single-concentration phosphor layer 22 covers only the top surface of the chip without wrapping the side surface, and the thickness is 5 ⁇ m; the outermost fluorescent sealing layer 3 is uniformly covered in the WLP package structure.
  • the phosphor concentration is lower than that of the single-concentration phosphor layer 22 of the WLP package structure, and the thickness is 20 ⁇ m.
  • the light is uniformly emitted in all directions, no blue light leakage on the side, and the light type is good, and the high light effect WL-COB type LED package form is formed.
  • the WL-SMD type LED package form of the present embodiment includes a bracket 1 on an SMD tape, a WLP and a WLCSP package structure 2 and an outermost plastic package layer 3 thereof; wherein, the WLP package structure 2 As shown in FIG. 2, the LED chip 21 and the single-concentration fluorescent layer 22 are sequentially disposed from the inside to the outside; the WLCSP package structure 2, as shown in FIG. 3, includes the LED chip 21 and a single concentration covering the top surface of the chip.
  • the phosphor layer 22 is formed into a WLP package structure, and the second concentration phosphor layer 23 is translucently or transparently coated on the top surface and the side surface of the WLP package structure, and the WLP and the WLCSP package structure 2 are sequentially arranged and packaged in the SMD volume. Bring the bracket 1 on it.
  • the phosphor concentration of the second concentration phosphor layer 23 of the WLCSP type LED package structure is smaller than that of the single-concentration phosphor layer 22, and the side surface of the light-emitting surface of the chip is allowed to be covered by the single-concentration phosphor layer 22, and the sides and The top surface thickness is 10 ⁇ m; the WLP/WLCSP package structure is covered with a layer of reflective adhesive with a thickness of 3 ⁇ m parallel to the sides of the SMD tape side; the outermost plastic sealing layer 3 is made of PPA or epoxy resin material, Affects internal chip illumination and has good heat dissipation performance.
  • the light emitted by the LED chip has a higher concentration of the phosphor layer than the WLP package structure, so that the light of the lower color temperature is uniformly mixed with the light of the higher color temperature emitted by the WLP package structure and connected in parallel.
  • the circuit drives the current to achieve the effect of adjusting the color temperature; the chip is coated with reflective glue on both sides of the SMD tape side to ensure that it emits light on three sides, forming a high-efficiency WL-SMD type LED package.
  • the WLP and WLCSP package structures are unchanged, and other structures include a straight strip type filament strip 1 and a full-package phosphor layer 3, However, the side of the chip is not covered with reflective glue.
  • the light emitted by the LED chip in the WLCSP package device has a higher concentration of the phosphor layer than the WLP package device, thereby emitting light of a lower color temperature, uniformly mixing with the light of the higher color temperature emitted by the WLP package device and passing through the parallel.
  • the circuit drives the current to achieve the effect of adjusting the color temperature; there is no reflective glue around the chip, ensuring its five-sided light output and good light quality, forming a high-efficiency WL-filament type LED package.
  • Embodiment 3 takes the WL-filament strip package form of Embodiment 3 as an example, which is prepared by the following steps:
  • Step S1 performing a sampling test on the LED wafer, and the wafer is selected from any of a positive structure chip, a flip chip structure, or a vertical structure chip.
  • Step S2 filming the wafers that have passed the sampling in step S1, and cutting and splicing the wafer after the filming, forming an independent chip intermediate, and spraying a slab on the top surface of the entire wafer.
  • Step S3 baking and solidifying the entire wafer after the step S2 is performed, and then performing chip test, sorting, and rearranging to obtain an LED chip having a single-concentration phosphor layer on the top surface, that is, a single-concentration phosphor layer.
  • WLP package structure
  • Step S4 forming a second concentration fluorescent layer 23 in a translucent or transparent shape on the obtained WLP package structure, the second concentration fluorescent layer phosphor concentration is smaller than the first concentration fluorescent layer, and allowing the side surface of the chip light emitting surface to be ⁇ 10
  • the % area is covered by the first concentration of the phosphor layer, and the thickness is 5 ⁇ m; and then baked, solidified, and divided again to obtain a WLCSP package structure having a double-concentration phosphor layer;
  • Step S5 connecting the selected WLP and WLCSP package structures having different color temperatures but all of the five sides of the light are connected in parallel to the straight filament strip 1 by metal welding;
  • Step S6 The phosphor layer having a phosphor concentration lower than that of the second concentration phosphor layer of the WLCSP package device is completely wrapped on the outer surface of the straight filament strip 1 and dried, and the thickness thereof is 20 ⁇ m, and the package is completed.
  • FIG. 7 it is a conventional color-adjustable filament strip package structure including a filament strip 1, a blue LED chip 4, a CSP package device 5, and a fully-coated phosphor layer 3.
  • This embodiment is a WL-filament type LED package. Compared with the traditional tunable temperature filament package structure, its blue LED chip and CSP package device are completely replaced by WLP and its derived WLCSP package structure, which has wider light emission range, better adjustability and more manufacturing cost. Low, color temperature changes are more refined and can be applied to a wider range of applications.
  • the integrated LED package form using WLP and the embodiment package method thereof have smaller package size, wider application range, higher package processing efficiency, and easier realization of miniaturization and integration of the light source.
  • the process flow is simple and stable, and the device yield is greatly improved, thereby reducing the cost of device fabrication.
  • the application of the novel WLP package structure packaging method can reduce the influence of junction temperature heat dissipation on the LED chip, ensure good illuminating light type, and the multi-layer adjustable phosphor layer setting makes the emitted light more controllable and more uniform, and the light is emitted.
  • the efficiency and light intensity are higher, which can effectively improve the range and fineness of color temperature, so as to be suitable for color temperature adjustment applications in a wider range of applications.

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Abstract

The present invention relates to an integrated LED packaging form which uses WLP, and a preparation method therefor. The integrated LED packaging form which uses WLP comprises a packaging substrate, WLP packaging structures arranged on the packaging substrate, and an outermost packaging layer covering the WLP packaging structures. The plurality of WLP packaging structures have same light exit surfaces, and each WLP packaging structure comprises an LED chip and a single concentration fluorescent powder layer coated on a top surface of the chip, the material or the fluorescent powder concentration of the fluorescent powder layer and the outermost packaging layer being different. The advantages of the present invention are: the integrated LED packaging means which uses WLP helps process production to reach target values, reduces process difficulty, and increases packaging efficiency and device yield; light-emitting chip heat dissipation performance can be improved, and device preparation costs can be reduced; device colour temperature adjustment accuracy and light type are improved, the colour temperature range threshold is increased, and the illumination effect is improved for various scenes.

Description

一种利用WLP的集成式LED封装形式及其制备方法Integrated LED package form using WLP and preparation method thereof 技术领域Technical field
本发明属于半导体封装技术领域，特别涉及一种利用WLP的集成式LED封装形式及其制备方法。The invention belongs to the technical field of semiconductor packaging, and particularly relates to an integrated LED package form using WLP and a preparation method thereof.
背景技术Background technique
发光二极管(LED)具有体积小、使用寿命长节能环保、响应速度快和坚固耐用等优点，广泛应用于汽车和室内照明、交通信号灯、屏幕显示和液晶背光等邻域，是替代传统光源的理想光源。随着人们对生活品质要求的提高，具有良好光型、高光密度、高光效及适应于各种情形下的可调色温光源逐渐成为关注热点。Light-emitting diodes (LEDs) have the advantages of small size, long service life, energy saving, fast response, and durability. They are widely used in automotive and indoor lighting, traffic lights, screen displays and LCD backlights. They are ideal for replacing traditional light sources. light source. With the improvement of people's quality of life requirements, the color light source with good light type, high optical density, high light efficiency and adaptability to various situations has gradually become a hot spot of attention.
一般的CSP封装方式，其封装过程中容易出现芯片和基板无法准确贴合，荧光粉入bin率低，光型缺陷等问题。由此而衍生的传统SMD、COB和灯丝灯等光源封装方式，受限于发光芯片自身的封装方式缺陷，容易引发出射混合光不均匀，固晶复杂，散热困难，芯片侧面漏光等问题，想要制造可调色温灯具则更是困难重重。目前，一种新型的WLP封装结构的提出，可以有效解决传统CSP封装器件喷粉难度高、均一性差而导致的工艺繁琐和成本较高问题。In the general CSP packaging method, the chip and the substrate cannot be accurately attached during the packaging process, and the phosphor has a low bin rate and a light defect. The conventional SMD, COB and filament lamps and other light source packaging methods are limited by the defects of the packaging method of the light-emitting chip itself, and it is easy to cause unevenness of the emitted mixed light, complicated solid crystal, difficult heat dissipation, and light leakage on the side of the chip. It is even more difficult to make a tunable temperature luminaire. At present, a new type of WLP package structure can effectively solve the problem of cumbersome process and high cost caused by high difficulty in powder spraying and poor uniformity of conventional CSP packaged devices.
而WLP封装结构虽封装工艺简单，分割及贴装较为精准，其自身却存在侧面无荧光粉层从而漏蓝光的问题。因此，研发一种 能够应用该新型WLP封装结构的封装方式，解决WLP自身封装缺陷，从而降低生产成本，改善器件散热性能，提高可靠性和均一性，实现较高精度的色温可调LED封装结构是非常有必要的。The WLP package structure has a simple packaging process, and the segmentation and mounting are relatively accurate. However, there is a problem that the surface of the WLP package has no phosphor layer and thus leaks blue light. Therefore, a packaging method capable of applying the novel WLP package structure is developed to solve WLP's own package defects, thereby reducing production cost, improving device heat dissipation performance, improving reliability and uniformity, and achieving higher precision color temperature adjustable LED package structure. It is very necessary.
发明内容Summary of the invention
本发明要解决的技术问题是提供一种能够应用新型WLP封装结构、降低器件制备成本以及提高器件可靠性和均一性的较高精度的集成式LED封装方式及其制备方法。The technical problem to be solved by the present invention is to provide a high-precision integrated LED package method capable of applying a novel WLP package structure, reducing device fabrication cost, and improving device reliability and uniformity, and a preparation method thereof.
为解决上述技术问题，本发明的技术方案为：一种利用WLP的集成式LED封装形式，包括自下而上依次设置的封装基板、WLP封装结构和最外封装层，其创新点在于：所述最外封装层内的WLP封装结构为多个，且出光面相同，各WLP封装结构均包括LED芯片和覆盖在该芯片顶面的单浓度荧光粉层，该荧光粉层和最外封装层具有不同的荧光粉浓度或不同的材料。In order to solve the above technical problem, the technical solution of the present invention is: an integrated LED package form using WLP, including a package substrate, a WLP package structure and an outermost package layer which are sequentially arranged from bottom to top, and the innovation is: The WLP package structure in the outermost encapsulation layer is plural, and the light-emitting surface is the same. Each WLP package structure includes an LED chip and a single-concentration phosphor layer covering the top surface of the chip, the phosphor layer and the outermost encapsulation layer. Have different phosphor concentrations or different materials.
一种实现上述集成式LED封装形式的制备方法，其创新点在于：所述制备方法包括如下步骤：A manufacturing method for realizing the above-mentioned integrated LED package form is innovative: the preparation method comprises the following steps:
步骤S1：对LED晶圆片进行抽测；Step S1: performing a sampling test on the LED wafer;
步骤S2：对步骤S1中抽测合格的晶圆片选择部分晶圆进行步骤S21或步骤S22；Step S2: performing step S21 or step S22 on selecting a portion of the wafer that has passed the sampling in step S1;
所述步骤S21具体为在步骤S1中抽测合格的晶圆片顶面发光面上直接喷涂一层荧光粉层，然后进行贴膜，并对贴膜后的晶圆片切割和裂片，形成独立的芯片中间体，然后进行单方向或双方向扩膜，扩膜后荧光粉层在各芯片中间体的顶面形成第一浓度荧光层，并通过扩 膜使得在该单方向或双方向上相邻的芯片中间体之间形成可填充间隙；在位于可填充间隙处的芯片中间体侧面覆盖反光胶层；The step S21 is specifically spraying a layer of phosphor powder directly on the top surface of the wafer that is qualified in the step S1, and then performing film coating, and cutting and dicing the wafer after the film is formed to form an independent chip intermediate. The body is then expanded in a single direction or in both directions. After the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate, and is expanded in the middle of the chip in the single direction or both directions. Forming a fillable gap between the bodies; covering the side of the chip intermediate at the fillable gap with the reflective adhesive layer;
所述步骤S22具体为对步骤S1中抽测合格的晶圆片进行贴膜，并对贴膜后的晶圆片切割和裂片，形成独立的芯片中间体，裂片后在整个晶圆片的顶面发光面上喷涂一层荧光粉层，然后进行双方向扩膜，扩膜后荧光粉层在各芯片中间体的顶面形成第一浓度荧光层；The step S22 is specifically for filming the wafers that have passed the sampling in the step S1, and cutting and dicing the wafer after the filming to form an independent chip intermediate, and the top surface of the entire wafer is flanked after the lobes. Spraying a layer of phosphor powder on the surface, and then performing bidirectional diffusion. After the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate;
步骤S3：对进行完步骤S2的整个晶圆片烘烤固化，而后进行芯片测试、分选、重排，得到一种顶面覆盖有单浓度荧光粉层且出光面相同的LED芯片，即具有单浓度荧光粉层的WLP封装结构；Step S3: baking and solidifying the entire wafer after the step S2 is performed, and then performing chip test, sorting, and rearranging to obtain an LED chip having a top surface covered with a single-concentration phosphor layer and having the same light-emitting surface, that is, having a WLP package structure of a single concentration phosphor layer;
步骤S4：将一种或多种出光面相同的多个WLP封装结构焊接在封装基板上；Step S4: soldering one or more WLP package structures having the same light-emitting surface to the package substrate;
步骤S5：将多个WLP封装结构封装在同一个最外封装层内，完成封装。Step S5: Encapsulating a plurality of WLP package structures in the same outermost package layer to complete the package.
进一步地，所述步骤S3与步骤S4之间，在步骤S3重排后的多个WLP封装结构顶面与侧面整体包覆呈半透明或透明状的第二浓度荧光层，经烘烤固化后对芯片再次分割，形成具有单浓度荧光粉层和第二浓度荧光层的WLP封装结构。Further, between the step S3 and the step S4, the top surface and the side surface of the plurality of WLP package structures rearranged in step S3 are integrally coated with a second-concentration fluorescent layer which is translucent or transparent, and is cured after baking. The chip is again divided to form a WLP package structure having a single concentration phosphor layer and a second concentration phosphor layer.
进一步地，所述WLP封装结构的侧壁可选择性地包覆反光胶层。Further, the sidewall of the WLP package structure can selectively coat the reflective adhesive layer.
进一步地，所述封装基板，选用COB光源封装基板、SMD卷带上的支架或直条/卷曲灯丝条中的任一种。Further, the package substrate is selected from a COB light source package substrate, a bracket on the SMD tape, or a straight/crimped filament.
进一步地，所述WLP封装结构中的LED芯片为正装结构芯片、倒装结构芯片或者垂直结构芯片中的任一种。Further, the LED chip in the WLP package structure is any one of a formal structure chip, a flip chip structure, or a vertical structure chip.
进一步地，所述WLP封装结构可选择两个及以上不同高低色温的封装形式，与最外封装层形成可调色温的LED封装结构。Further, the WLP package structure may select two or more different high and low color temperature package forms, and form a color temperatureable LED package structure with the outermost package layer.
进一步地，所述最外封装层为荧光层，且荧光层的荧光粉浓度低于WLP荧光粉层的浓度，所述最外封装层将WLP封装结构封装后形成WL-COB型LED封装形式。Further, the outermost encapsulation layer is a fluorescent layer, and the phosphor layer has a phosphor concentration lower than that of the WLP phosphor layer, and the outermost encapsulation layer encapsulates the WLP package structure to form a WL-COB type LED package.
进一步地，所述最外封装层为PPA或环氧树脂材料注塑而成，所述最外封装层将WLP封装结构封装后形成WL-SMD型LED封装形式。Further, the outermost encapsulation layer is injection molded of a PPA or epoxy resin material, and the outermost encapsulation layer encapsulates the WLP package structure to form a WL-SMD type LED package.
进一步地，所述最外封装层为全包裹在直条或卷曲型灯丝条上的荧光层，且荧光层的荧光粉浓度低于WLP荧光粉层的浓度，所述最外封装层将WLP封装结构封装后形成WL-灯丝条型LED封装形式。Further, the outermost encapsulation layer is a fluorescent layer completely wrapped on a straight strip or a crimped filament strip, and the phosphor layer has a phosphor concentration lower than that of the WLP phosphor layer, and the outermost encapsulation layer is WLP packaged. After the structure is packaged, a WL-filament type LED package form is formed.
本发明的优点在于：The advantages of the invention are:
(1)本发明利用WLP的集成式LED封装形式，其中的WLP封装结构，其大部分热量被一次喷涂的大颗粒沉淀荧光粉所吸收，最外封装层几乎不受发光芯片散热影响，减少胶体龟裂发生；所喷涂荧光粉层非透明但轮廓基本和芯片一致，可以准确进行固晶、电极对准等后续工艺，降低工艺难度，进而降低器件制备成本；而传统的CSP封装膜层较厚、散热差、高温高湿下硅胶气密性不好，易掉粉,易引入气泡，且由于只能看到荧光粉表面，芯片与焊盘无法实现精准定位，容易出现漏电，开路可靠性风险。(1) The invention utilizes the integrated LED package form of WLP, wherein the majority of the heat of the WLP package structure is absorbed by the large particle-precipitated phosphor sprayed once, and the outermost package layer is hardly affected by the heat dissipation of the light-emitting chip, and the colloid is reduced. Cracking occurs; the sprayed phosphor layer is non-transparent but the contour is basically the same as the chip, which can accurately perform subsequent processes such as die bonding and electrode alignment, reducing the process difficulty and further reducing the device fabrication cost; while the conventional CSP package film layer is thicker. The heat dissipation is poor, the high temperature and high humidity, the silicone is not good in air tightness, easy to drop powder, easy to introduce bubbles, and since only the surface of the phosphor can be seen, the chip and the pad cannot be accurately positioned, and leakage is easy to occur, and the reliability of open circuit is at risk. .
(2)本发明利用WLP的集成式LED封装形式，其中WLP封装结构只有顶面覆盖薄层荧光粉，出光均一性更好；最外封装层对WLP一次喷涂荧光粉起补充作用，可以有效弥补侧壁蓝光泄露问题；外层反 光胶对下层荧光粉层保护作用，且通过包覆不同侧面，实现单面出光、三面出光或者五面出光，适用于不同的场景，应用范围广阔；而传统的CSP封装由于荧光粉分布均匀性、厚度、侧发光难以控制，一次喷涂入bin率低，且容易由于芯片摆放、切割误差使得CSP侧面胶厚不一致，影响侧面出光均匀性，导致光型不理想。(2) The invention utilizes the integrated LED package form of WLP, wherein the WLP package structure only has a top surface covered with a thin layer of phosphor, and the light uniformity is better; the outermost encapsulation layer supplements the WLP primary spray phosphor, which can effectively make up The problem of blue light leakage on the sidewall; the outer layer of reflective glue protects the underlying phosphor layer, and by covering different sides, single-sided light emission, three-sided light output or five-sided light output is applicable to different scenes, and the application range is wide; Due to the uniformity of phosphor distribution, thickness and side luminescence, the CSP package is difficult to control. The rate of one shot is low, and the thickness of the CSP is inconsistent due to chip placement and cutting error, which affects the uniformity of the side light output, resulting in unsatisfactory light pattern. .
(3)本发明利用WLP的集成式LED封装形式，具有更小的封装尺寸，更广的适用范围，更高的封装加工效率，更易实现光源的微型化和集成化，工艺流程简单且稳定，器件良率大大提高，有利于实现色温可调的LED封装结构。(3) The invention utilizes WLP integrated LED package form, has smaller package size, wider application range, higher packaging processing efficiency, easier realization of miniaturization and integration of light source, and simple and stable process flow. The device yield is greatly improved, which is beneficial to realize an LED package structure with adjustable color temperature.
附图说明DRAWINGS
下面结合附图和具体实施方式对本发明作进一步详细的说明。The present invention will be further described in detail below in conjunction with the drawings and specific embodiments.
图1为实施例利用WLP的集成式LED封装形式的横截面示意图。1 is a schematic cross-sectional view of an embodiment of an integrated LED package using WLP.
图2为图1中一种WLP封装结构的横截面示意图。2 is a schematic cross-sectional view of a WLP package structure of FIG. 1.
图3为图1中另一种WLP封装结构的横截面示意图。3 is a schematic cross-sectional view of another WLP package structure of FIG. 1.
图4为本发明WL-COB型LED封装形式的俯视示意图。4 is a top plan view of a WL-COB type LED package of the present invention.
图5为本发明WL-SMD型LED封装形式的俯视示意图。FIG. 5 is a top plan view of a WL-SMD type LED package form of the present invention.
图6为本发明WL-灯丝条型LED封装形式的俯视示意图。6 is a top plan view of a WL-filament type LED package of the present invention.
图7为传统的可调色温的灯丝条封装形式的俯视示意图。Figure 7 is a top plan view of a conventional color gradable filament strip package.
具体实施方式Detailed ways
下面的实施例可以使本专业的技术人员更全面地理解本发明，但并不因此将本发明限制在所述的实施例范围之中。The following examples are intended to provide a fuller understanding of the invention, and are not intended to limit the invention.
实施例1-3利用WLP的集成式LED封装形式中，WLP封装结构可 选用两种结构，第一种结构，如图2所示，包括LED芯片21和覆盖在该芯片顶面的单浓度荧光粉层22；第二种结构，是具有单浓度荧光粉层和第二浓度荧光层的WLP封装结构，即WLP封装结构衍生的WLCSP封装结构，如图3所示，包括LED芯片21和覆盖在该芯片顶面的单浓度荧光粉层22，形成WLP封装结构，且在WLP封装结构顶面与侧面整体包覆呈半透明或透明状的第二浓度荧光层23。Embodiment 1-3 In the integrated LED package form using WLP, the WLP package structure can adopt two structures. The first structure, as shown in FIG. 2, includes the LED chip 21 and a single-concentration fluorescent film covering the top surface of the chip. The powder layer 22; the second structure is a WLP package structure having a single concentration phosphor layer and a second concentration phosphor layer, that is, a WLC package structure derived from a WLP package structure, as shown in FIG. 3, including the LED chip 21 and covering The single-concentration phosphor layer 22 on the top surface of the chip forms a WLP package structure, and the second concentration phosphor layer 23 is translucent or transparently coated on the top surface and the side surface of the WLP package structure.
实施例1Example 1
本实施例WL-COB型LED封装形式，如图4所示，包括自下而上依次设置的COB光源封装基板1、WLP封装结构2和最外荧光胶封层3；其中，WLP封装结构2，如图2所示，包括由内而外依次设置的LED芯片21和单浓度荧光层22。The WL-COB type LED package form of the embodiment, as shown in FIG. 4, includes a COB light source package substrate 1, a WLP package structure 2 and an outermost fluorescent seal layer 3 which are sequentially arranged from bottom to top; wherein, the WLP package structure 2 As shown in FIG. 2, the LED chip 21 and the single-concentration phosphor layer 22 are disposed in this order from the inside to the outside.
本实施例WLP封装结构2中的LED芯片21选用正装结构芯片、倒装结构芯片或者垂直结构芯片中的任一种，且LED芯片21排布方式不限于矩阵和点阵或环状排列，可根据实际场景需要灵活排列，充分均匀出光；WLP封装结构2中单浓度荧光粉层22只覆盖芯片的顶面而不包裹侧面，厚度为5μm；最外荧光胶封层3均匀覆盖在WLP封装结构上，其荧光粉浓度低于WLP封装结构的单浓度荧光层22，厚度为20μm。The LED chip 21 in the WLP package structure 2 of the present embodiment may be any one of a positive-mounted structure chip, a flip-chip structure chip or a vertical structure chip, and the arrangement of the LED chips 21 is not limited to a matrix and a dot matrix or a ring array. According to the actual scene, it needs to be flexibly arranged to uniformly emit light. In the WLP package structure 2, the single-concentration phosphor layer 22 covers only the top surface of the chip without wrapping the side surface, and the thickness is 5 μm; the outermost fluorescent sealing layer 3 is uniformly covered in the WLP package structure. The phosphor concentration is lower than that of the single-concentration phosphor layer 22 of the WLP package structure, and the thickness is 20 μm.
本实施例WLP封装结构各方向均匀出光，无侧面漏蓝光现象，光型良好，构成高光效WL-COB型LED封装形式。In the WLP package structure of the embodiment, the light is uniformly emitted in all directions, no blue light leakage on the side, and the light type is good, and the high light effect WL-COB type LED package form is formed.
实施例2Example 2
本实施例WL-SMD型LED封装形式，如图1和5所示，包括SMD 卷带上的支架1，WLP及其衍生的WLCSP封装结构2和最外塑封层3；其中，WLP封装结构2，如图2所示，包括由内而外依次设置的LED芯片21和单浓度荧光层22；WLCSP封装结构2，如图3所示，包括LED芯片21和覆盖在该芯片顶面的单浓度荧光粉层22，形成WLP封装结构，且在WLP封装结构顶面与侧面整体包覆呈半透明或透明状的第二浓度荧光层23，且WLP和WLCSP封装结构2依次交替排列封装在SMD卷带上的支架1上。The WL-SMD type LED package form of the present embodiment, as shown in FIGS. 1 and 5, includes a bracket 1 on an SMD tape, a WLP and a WLCSP package structure 2 and an outermost plastic package layer 3 thereof; wherein, the WLP package structure 2 As shown in FIG. 2, the LED chip 21 and the single-concentration fluorescent layer 22 are sequentially disposed from the inside to the outside; the WLCSP package structure 2, as shown in FIG. 3, includes the LED chip 21 and a single concentration covering the top surface of the chip. The phosphor layer 22 is formed into a WLP package structure, and the second concentration phosphor layer 23 is translucently or transparently coated on the top surface and the side surface of the WLP package structure, and the WLP and the WLCSP package structure 2 are sequentially arranged and packaged in the SMD volume. Bring the bracket 1 on it.
本实施例，WLCSP型LED封装结构第二浓度荧光层23荧光粉浓度小于单浓度荧光粉层22，且允许所述芯片出光面的侧面＜10％面积被单浓度荧光粉层22覆盖，各侧面及顶面厚度均为10μm；WLP/WLCSP封装结构平行于SMD卷带边的两个侧面均覆盖一层厚度为3μm的反光胶；最外塑封层3由PPA或环氧树脂材料注塑而成，不影响内部芯片发光，且散热性能良好。In this embodiment, the phosphor concentration of the second concentration phosphor layer 23 of the WLCSP type LED package structure is smaller than that of the single-concentration phosphor layer 22, and the side surface of the light-emitting surface of the chip is allowed to be covered by the single-concentration phosphor layer 22, and the sides and The top surface thickness is 10μm; the WLP/WLCSP package structure is covered with a layer of reflective adhesive with a thickness of 3μm parallel to the sides of the SMD tape side; the outermost plastic sealing layer 3 is made of PPA or epoxy resin material, Affects internal chip illumination and has good heat dissipation performance.
本实施例WLCSP型LED封装结构中LED芯片发出的光通过的荧光粉层浓度高于WLP封装结构，因此发出较低色温的光，与WLP封装结构发出的较高色温的光均匀混合并通过并联电路驱动电流的大小来达到调节色温的效果；芯片平行于SMD卷带边的两个侧面包覆反光胶，确保其三面出光，构成高光效WL-SMD型LED封装形式。In the WLCSP type LED package structure of the present embodiment, the light emitted by the LED chip has a higher concentration of the phosphor layer than the WLP package structure, so that the light of the lower color temperature is uniformly mixed with the light of the higher color temperature emitted by the WLP package structure and connected in parallel. The circuit drives the current to achieve the effect of adjusting the color temperature; the chip is coated with reflective glue on both sides of the SMD tape side to ensure that it emits light on three sides, forming a high-efficiency WL-SMD type LED package.
实施例3Example 3
本实施例WL-灯丝条型LED封装形式，与实施例2相比，如图6所示，WLP及WLCSP封装结构不变，其他结构包括直条型灯丝条1和全包裹荧光粉层3，但芯片侧面不包覆反光胶。In the WL-filament type LED package form of this embodiment, compared with the embodiment 2, as shown in FIG. 6, the WLP and WLCSP package structures are unchanged, and other structures include a straight strip type filament strip 1 and a full-package phosphor layer 3, However, the side of the chip is not covered with reflective glue.
本实施例中，WLCSP封装器件中LED芯片发出的光通过的荧光粉层浓度高于WLP封装器件，因此发出较低色温的光，与WLP封装器件发出的较高色温的光均匀混合并通过并联电路驱动电流的大小来达到调节色温的效果；芯片四周无反光胶，确保其五面出光且光型良好，构成高光效WL-灯丝条型LED封装形式。In this embodiment, the light emitted by the LED chip in the WLCSP package device has a higher concentration of the phosphor layer than the WLP package device, thereby emitting light of a lower color temperature, uniformly mixing with the light of the higher color temperature emitted by the WLP package device and passing through the parallel. The circuit drives the current to achieve the effect of adjusting the color temperature; there is no reflective glue around the chip, ensuring its five-sided light output and good light quality, forming a high-efficiency WL-filament type LED package.
实施例4Example 4
本实施例以实施例3的WL-灯丝条封装形式为例，其是通过以下步骤制备而成的：This embodiment takes the WL-filament strip package form of Embodiment 3 as an example, which is prepared by the following steps:
步骤S1:对LED晶圆片进行抽测，该晶圆片选用正装结构芯片、倒装结构芯片或者垂直结构芯片中的任一种。Step S1: performing a sampling test on the LED wafer, and the wafer is selected from any of a positive structure chip, a flip chip structure, or a vertical structure chip.
步骤S2:对步骤S1中抽测合格的晶圆片进行贴膜，并对贴膜后的晶圆片切割和裂片，形成独立的芯片中间体，裂片后在整个晶圆片的顶面发光面上喷涂一层荧光粉层，然后进行双方向扩膜，扩膜后荧光粉层在各芯片中间体的顶面形成第一浓度荧光层；Step S2: filming the wafers that have passed the sampling in step S1, and cutting and splicing the wafer after the filming, forming an independent chip intermediate, and spraying a slab on the top surface of the entire wafer. Layer phosphor layer, and then biaxially expanding the film, after the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate;
步骤S3：对进行完步骤S2的整个晶圆片烘烤固化，而后进行芯片测试、分选、重排，得到顶面覆盖有单浓度荧光粉层的LED芯片，即具有单浓度荧光粉层的WLP封装结构；Step S3: baking and solidifying the entire wafer after the step S2 is performed, and then performing chip test, sorting, and rearranging to obtain an LED chip having a single-concentration phosphor layer on the top surface, that is, a single-concentration phosphor layer. WLP package structure;
步骤S4：在所得WLP封装结构上形成呈半透明或透明状的第二浓度荧光层23，第二浓度荧光层荧光粉浓度小于第一浓度荧光层，且允许所述芯片出光面的侧面＜10％面积被第一浓度荧光层覆盖，厚度均为5μm；而后再次进行烘烤、固化、分割，得到具有双浓度荧光粉层的WLCSP封装结构；Step S4: forming a second concentration fluorescent layer 23 in a translucent or transparent shape on the obtained WLP package structure, the second concentration fluorescent layer phosphor concentration is smaller than the first concentration fluorescent layer, and allowing the side surface of the chip light emitting surface to be <10 The % area is covered by the first concentration of the phosphor layer, and the thickness is 5 μm; and then baked, solidified, and divided again to obtain a WLCSP package structure having a double-concentration phosphor layer;
步骤S5：将选定好的具有不同色温但均为五面出光的WLP和WLCSP封装结构以并联形式通过金属焊接方式连接在直条灯丝条1上；Step S5: connecting the selected WLP and WLCSP package structures having different color temperatures but all of the five sides of the light are connected in parallel to the straight filament strip 1 by metal welding;
步骤S6：在直条灯丝条1外表面全包裹荧光粉浓度低于WLCSP封装器件的第二浓度荧光层的荧光粉层并烘干，其厚度为20μm，完成封装。Step S6: The phosphor layer having a phosphor concentration lower than that of the second concentration phosphor layer of the WLCSP package device is completely wrapped on the outer surface of the straight filament strip 1 and dried, and the thickness thereof is 20 μm, and the package is completed.
如图7所示，为传统的可调色温的灯丝条封装结构，包括灯丝条1，蓝光LED芯片4，CSP封装器件5和全包覆荧光粉层3。As shown in FIG. 7, it is a conventional color-adjustable filament strip package structure including a filament strip 1, a blue LED chip 4, a CSP package device 5, and a fully-coated phosphor layer 3.
本实施例WL-灯丝条型LED封装形式。，与传统的可调色温的灯丝条封装结构相比，其蓝光LED芯片和CSP封装器件完全替换为WLP及其衍生的WLCSP封装结构，出光范围更广且可调节性更好，制作成本更低，色温变化的精细程度更高，可适用于更广泛的应用场合。This embodiment is a WL-filament type LED package. Compared with the traditional tunable temperature filament package structure, its blue LED chip and CSP package device are completely replaced by WLP and its derived WLCSP package structure, which has wider light emission range, better adjustability and more manufacturing cost. Low, color temperature changes are more refined and can be applied to a wider range of applications.
本发明所述的利用WLP的集成式LED封装形式及其实施例封装方式，具有更小的封装尺寸，更广的适用范围，更高的封装加工效率，更易实现光源的微型化和集成化，工艺流程简单且稳定，器件良率大大提高，进而降低器件制备成本。其应用新型WLP封装结构的封装方式，可以减少结温散热对LED芯片的影响，确保发光光型良好，同时多层可调节荧光粉层的设置，使得发出的光线更可控以及更均匀，出光效率以及出光强度更高，有效提升色温可变化范围及精细程度，以适用于更加广泛场合下的色温调节应用。The integrated LED package form using WLP and the embodiment package method thereof have smaller package size, wider application range, higher package processing efficiency, and easier realization of miniaturization and integration of the light source. The process flow is simple and stable, and the device yield is greatly improved, thereby reducing the cost of device fabrication. The application of the novel WLP package structure packaging method can reduce the influence of junction temperature heat dissipation on the LED chip, ensure good illuminating light type, and the multi-layer adjustable phosphor layer setting makes the emitted light more controllable and more uniform, and the light is emitted. The efficiency and light intensity are higher, which can effectively improve the range and fineness of color temperature, so as to be suitable for color temperature adjustment applications in a wider range of applications.
以上显示和描述了本发明的基本原理和主要特征以及本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制， 上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。The basic principles and main features of the invention and the advantages of the invention have been shown and described above. It should be understood by those skilled in the art that the present invention is not limited by the foregoing embodiments, and that the present invention is only described in the foregoing description and the description of the present invention, without departing from the spirit and scope of the invention. Various changes and modifications are intended to be included within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and their equivalents.

Claims (10)

  1. 一种利用WLP的集成式LED封装形式，包括自下而上依次设置的封装基板、WLP封装结构和最外封装层，其特征在于：所述最外封装层内的WLP封装结构为多个，且出光面相同，各WLP封装结构均包括LED芯片和覆盖在该芯片顶面的单浓度荧光粉层，该荧光粉层和最外封装层具有不同的荧光粉浓度或不同的材料。An integrated LED package form using WLP, comprising a package substrate, a WLP package structure and an outermost package layer disposed in sequence from bottom to top, wherein: the WLP package structure in the outermost package layer is plural. And the same light-emitting surface, each WLP package structure comprises an LED chip and a single-concentration phosphor layer covering the top surface of the chip, the phosphor layer and the outermost encapsulation layer have different phosphor concentrations or different materials.
  2. 一种实现权利要求1所述集成式LED封装形式的制备方法，其特征在于：所述制备方法包括如下步骤：A method for preparing an integrated LED package form according to claim 1, wherein the preparation method comprises the following steps:
    步骤S1：对LED晶圆片进行抽测；Step S1: performing a sampling test on the LED wafer;
    步骤S2：对步骤S1中抽测合格的晶圆片选择部分晶圆进行步骤S21或步骤S22；Step S2: performing step S21 or step S22 on selecting a portion of the wafer that has passed the sampling in step S1;
    所述步骤S21具体为在步骤S1中抽测合格的晶圆片顶面发光面上直接喷涂一层荧光粉层，然后进行贴膜，并对贴膜后的晶圆片切割和裂片，形成独立的芯片中间体，然后进行单方向或双方向扩膜，扩膜后荧光粉层在各芯片中间体的顶面形成第一浓度荧光层，并通过扩膜使得在该单方向或双方向上相邻的芯片中间体之间形成可填充间隙；在位于可填充间隙处的芯片中间体侧面覆盖反光胶层；The step S21 is specifically spraying a layer of phosphor powder directly on the top surface of the wafer that is qualified in the step S1, and then performing film coating, and cutting and dicing the wafer after the film is formed to form an independent chip intermediate. The body is then expanded in a single direction or in both directions. After the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate, and is expanded in the middle of the chip in the single direction or both directions. Forming a fillable gap between the bodies; covering the side of the chip intermediate at the fillable gap with the reflective adhesive layer;
    所述步骤S22具体为对步骤S1中抽测合格的晶圆片进行贴膜，并对贴膜后的晶圆片切割和裂片，形成独立的芯片中间体，裂片后在整个晶圆片的顶面发光面上喷涂一层荧光粉层，然后进行双方向扩膜，扩膜后荧光粉层在各芯片中间体的顶面形成第一浓度荧光 层；The step S22 is specifically for filming the wafers that have passed the sampling in the step S1, and cutting and dicing the wafer after the filming to form an independent chip intermediate, and the top surface of the entire wafer is flanked after the lobes. Spraying a layer of phosphor powder on the surface, and then performing bidirectional diffusion. After the film is expanded, the phosphor layer forms a first concentration of phosphor layer on the top surface of each chip intermediate;
    步骤S3：对进行完步骤S2的整个晶圆片烘烤固化，而后进行芯片测试、分选、重排，得到一种顶面覆盖有单浓度荧光粉层且出光面相同的LED芯片，即具有单浓度荧光粉层的WLP封装结构；Step S3: baking and solidifying the entire wafer after the step S2 is performed, and then performing chip test, sorting, and rearranging to obtain an LED chip having a top surface covered with a single-concentration phosphor layer and having the same light-emitting surface, that is, having a WLP package structure of a single concentration phosphor layer;
    步骤S4：将一种或多种出光面相同的多个WLP封装结构焊接在封装基板上；Step S4: soldering one or more WLP package structures having the same light-emitting surface to the package substrate;
    步骤S5：将多个WLP封装结构封装在同一个最外封装层内，完成封装。Step S5: Encapsulating a plurality of WLP package structures in the same outermost package layer to complete the package.
  3. 根据权利要求2所述的集成式LED封装形式的制备方法，其特征在于：所述步骤S3与步骤S4之间，在步骤S3重排后的多个WLP封装结构顶面与侧面整体包覆呈半透明或透明状的第二浓度荧光层，经烘烤固化后对芯片再次分割，形成具有单浓度荧光粉层和第二浓度荧光层的WLP封装结构。The method for fabricating an integrated LED package according to claim 2, wherein between the step S3 and the step S4, the top surface and the side surface of the plurality of WLP package structures rearranged in step S3 are integrally wrapped. The semi-transparent or transparent second concentration fluorescent layer is baked and solidified to divide the chip again to form a WLP package structure having a single concentration phosphor layer and a second concentration phosphor layer.
  4. 根据权利要求3所述的集成式LED封装形式的制备方法，其特征在于：所述WLP封装结构的侧壁可选择性地包覆反光胶层。The method of fabricating an integrated LED package according to claim 3, wherein the sidewall of the WLP package structure selectively coats the reflective adhesive layer.
  5. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法，其特征在于：所述封装基板，选用COB光源封装基板、SMD卷带上的支架或直条/卷曲灯丝条中的任一种。The method for preparing an integrated LED package according to claim 2, 3 or 4, wherein the package substrate is selected from a COB light source package substrate, a bracket on an SMD tape, or a straight/crimped filament strip. Any one.
  6. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法，其特征在于：所述WLP封装结构中的LED芯片为正装结构芯片、倒装结构芯片或者垂直结构芯片中的任一种。The method for fabricating an integrated LED package according to claim 2, 3 or 4, wherein the LED chip in the WLP package structure is any one of a formal structure chip, a flip chip structure or a vertical structure chip. Kind.
  7. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法， 其特征在于：所述WLP封装结构可选择两个及以上不同高低色温的封装形式，与最外封装层形成可调色温的LED封装结构。The method for fabricating an integrated LED package according to claim 2, 3 or 4, wherein the WLP package structure can be selected from two or more different high and low color temperature packages, and is formed adjustable with the outermost package layer. Color temperature LED package structure.
  8. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法，其特征在于：所述最外封装层为荧光层，且荧光层的荧光粉浓度低于WLP荧光粉层的浓度，所述最外封装层将WLP封装结构封装后形成WL-COB型LED封装形式。The method for preparing an integrated LED package according to claim 2, 3 or 4, wherein the outermost encapsulation layer is a fluorescent layer, and the phosphor concentration of the fluorescent layer is lower than the concentration of the WLP phosphor layer. The outermost encapsulation layer encapsulates the WLP package structure to form a WL-COB type LED package.
  9. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法，其特征在于：所述最外封装层为PPA或环氧树脂材料注塑而成，所述最外封装层将WLP封装结构封装后形成WL-SMD型LED封装形式。The method for fabricating an integrated LED package according to claim 2, 3 or 4, wherein the outermost encapsulation layer is injection molded of PPA or epoxy material, and the outermost encapsulation layer is WLP packaged. The WL-SMD type LED package form is formed after the structure is packaged.
  10. 根据权利要求2、3或4所述的集成式LED封装形式的制备方法，其特征在于：所述最外封装层为全包裹在直条或卷曲型灯丝条上的荧光层，且荧光层的荧光粉浓度低于WLP荧光粉层的浓度，所述最外封装层将WLP封装结构封装后形成WL-灯丝条型LED封装形式。The method for preparing an integrated LED package according to claim 2, 3 or 4, wherein the outermost encapsulation layer is a fluorescent layer completely wrapped on a straight or curled filament strip, and the phosphor layer is The phosphor concentration is lower than the concentration of the WLP phosphor layer, and the outermost encapsulation layer encapsulates the WLP package structure to form a WL-filament type LED package.
PCT/CN2019/095301 2018-05-17 2019-07-09 Integrated led packaging form which uses wlp, and preparation method therefor WO2019219095A1 (en)

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