CN102738372A - Novel LED (light emitting diode) integrated light source module and preparation method thereof - Google Patents

Novel LED (light emitting diode) integrated light source module and preparation method thereof Download PDF

Info

Publication number
CN102738372A
CN102738372A CN2012102387537A CN201210238753A CN102738372A CN 102738372 A CN102738372 A CN 102738372A CN 2012102387537 A CN2012102387537 A CN 2012102387537A CN 201210238753 A CN201210238753 A CN 201210238753A CN 102738372 A CN102738372 A CN 102738372A
Authority
CN
China
Prior art keywords
source module
barricade
curing
led
led chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012102387537A
Other languages
Chinese (zh)
Inventor
王孟源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FOSHAN ZHONGHAO PHOTOELECTRIC TECHNOLOGY CO LTD
Original Assignee
FOSHAN ZHONGHAO PHOTOELECTRIC TECHNOLOGY CO LTD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FOSHAN ZHONGHAO PHOTOELECTRIC TECHNOLOGY CO LTD filed Critical FOSHAN ZHONGHAO PHOTOELECTRIC TECHNOLOGY CO LTD
Priority to CN2012102387537A priority Critical patent/CN102738372A/en
Publication of CN102738372A publication Critical patent/CN102738372A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Led Device Packages (AREA)

Abstract

The invention discloses a novel LED integrated light source module. The novel LED integrated light source module comprises a substrate body, and LED chips arranged on the substrate body, wherein rubber barrier walls are arranged on the substrate body to enclose an LED chip fixing region on the substrate body to at least one closed region; the LED chips are arranged in the closed region; the rubber barrier walls can stop a phosphor powder glue mixed layer in the LED chip region from flowing out of the light emitting region due to fluid dynamics and can also improve the light emitting efficiency and light uniformity of the LED chip. The invention also discloses a processing method of the above LED integrated light source module.

Description

A kind of New LED integrated optical source module and preparation method thereof
Technical field
The present invention relates to the LED encapsulation technology, be specifically related to a kind of New LED integrated optical source module and preparation method thereof.
Background technology
LED has environmental protection and energy saving, high, the characteristics such as the life-span is long, toggle speed is fast, chroma height of brightness as a kind of new type light source, is widely used in outdoor advertising display screen, indoor illumination and decorative lamp and emergency light etc.
The method that realizes white light with LED mainly is to excite yellow fluorescent powder to be mixed into white light with blue-light LED chip; In packaging technology; The main employing is coated on yellow fluorescent powder and glue mixture on the surface of chip, reaches certain thickness until fluorescent material glue mixed layer.With reference to Fig. 1, among the figure: 1-substrate, 2-press box, the solid brilliant some powder of 3-LED district, 4-location hole; The thickness of control fluorescent material glue mixed layer mainly contains two kinds of forms with control fluorescent material glue mixed layer because of the mobile face shaping of fluid mechanics in conventional package technology: a kind of is single formula, through design metal reflective cup on support; Another kind is an integrated form, adds the periphery that encapsulates substrate a press box support is set; These two kinds of methods all are when substrate is manufactured, just to confirm.And in LED encapsulation production process; The difference of production technology because the variable thickness of main former material led chip is made peace; Gu the height of led chip differs bigger behind the brilliant bonding wire, and the wall height of conventional stent and substrate is fixed, behind coating fluorescent material glue mixed layer; The variable thickness of the fluorescent material glue mixed layer on the led chip that will cause causes, thus the photochromic inconsistent and luminous efficiency that reduces the whole LED device of the LED device after occurring encapsulating etc.The peripheral metal press box of integrated form dress substrate is after having manufactured base plate for packaging, and pressing one metal outer frame on substrate exists difficulty of processing big again, problems such as quality instability and cost height.
Summary of the invention
First goal of the invention of the present invention is to overcome the defective of prior art, and a kind of New LED integrated optical source module simple, that illumination effect is good of processing is provided.
Second goal of the invention of the present invention is to provide a kind of processing method of above-mentioned LED integrated optical source module.
For realizing first goal of the invention of the present invention; The present invention adopts following technical scheme: a kind of New LED integrated optical source module; Comprise base main body and be arranged on the led chip on the base main body, said base main body is provided with the colloid barricade, and said colloid barricade surrounds at least one closed zone with led chip fixed area on the base main body; Said led chip is arranged in the said closed zone, and this colloid barricade is easy to process.
Optimal way of the present invention, said colloid barricade forms for the mixture solidified of white, Transparent color silica gel and phosphor powder, and this colloid barricade is easy to process, and it is luminous to also help led chip.
Optimal way of the present invention, said mixture adopt the mode of hot curing to solidify, and its heat curing temperature is in 50~250 degree, and thermal curing time is in 5~150 minutes.
Optimal way of the present invention, said mixture adopt the mode of ultra-violet curing to solidify, and the wavelength of its ultra-violet curing moulding is in the scope of 10 ~ 400nm, and the time of ultra-violet curing moulding is within 2s-100s.
Optimal way of the present invention, the height of said barricade are 0.2~10mm.
Optimal way of the present invention, said barricade to the distance of LED chip between 0.05~30mm.
For realizing second goal of the invention of the present invention, the present invention adopts following technical scheme, and a kind of preparation method like above-mentioned arbitrary New LED integrated optical source module may further comprise the steps:
(1) inspecting substrate and surface treatment: substrate is encapsulated preceding inspection and dehumidification treatments;
(2) solid brilliant: the assigned address at substrate is coated with crystal-bonding adhesive, and led chip is positioned over scribbles the crystal-bonding adhesive place, and solid brilliant good substrate is toasted, and the oven dry crystal-bonding adhesive is fixed on the substrate LED wafer;
(3) bonding wire: the both positive and negative polarity of LED wafer is electrically connected with the positive and negative electrode pad of substrate respectively with gold thread;
(4) manufacture the colloid barricade: at the assigned address of substrate; The accurate automatically dropping glue equipment that employing has a mechanical arm carries out setting-out and manufactures barricade; And will finish grade substrate of wall glue and toast, the temperature during baking is 50~250 ° of C, stoving time is 5~150 minutes;
(5) transparent adhesive tape coating and curing: be coated with layer of transparent glue around the led chip behind bonding wire, be closed chip and gold thread, the LED wafer that has been coated with transparent adhesive tape is toasted, make its curing;
(6) fluorescent material coating and curing: on the transparent adhesive tape after the curing, be coated with layer of fluorescent powder, the LED wafer that has been coated with fluorescent material is toasted, make its curing.
Said preparation method's further improvement is: the preferred 150 ° of C of baking temperature in the said step (4).
Said preparation method's further improvement is: stoving time is preferred 60 minutes in the said step (4).
The invention has the beneficial effects as follows,
(1) the said organic colloid barricade fluorescent material glue mixed layer that can stop led chip zone flows to outside the light-emitting zone because of the fluid mechanics relation
(2) said organic colloid barricade can effectively be controlled the amount and the even equal property of thickness of the fluorescent material glue mixed layer in the inner led chip of barricade zone; Thereby effectively control the light effect that goes out on the LED device all directions; Reduced the optical energy loss of led chip; The light that makes fluorescent material on all directions excite is consistent with the radiative ratio of led chip, has improved the luminous efficiency and the light-emitting uniformity of LED chip.
(3) said organic colloid barricade size controlled, can big good fortune reduce the use amount of fluorescent material glue, effectively reduce the production cost of LED device.
(4) said organic silicon rubber barricade adheres to and is solidificated on the substrate, has protection against the tide, waterproof; Anti-ozone, radiation hardness, characteristics such as weather-resistant (high temperature resistant 260 ℃); Guarantee the air-tightness and the physical strength of LED device, improved the life-span and the stability of LED device;
(5) the colloid barricade adopts the setting-out function of automatically dropping glue equipment to realize, through can accurately control the face shaping and the size of organic silicon rubber moulding to automatically dropping glue equipment setting program;
(6) the manufacture technology equipment of said organic colloid barricade is simple, can directly accomplish with existing automatically dropping glue equipment, do not need newly added equipment, and manufacture technology is simple, so production efficiency is high, and processing cost is low.
Description of drawings
Fig. 1 is the adjustable color temperature light source module sketch map of prior art;
Among the figure: 1-substrate, 2-press box, the solid brilliant some powder of 3-LED district, 4-location hole.
Fig. 2 is a kind of barricade formula LED integrated optical source module sketch map of the present invention;
Among the figure: 11-substrate, 12-colloid barricade, 13-LED crystal bonding area, 14-location hole.
Embodiment
Specify structure of the present invention and preparation method according to accompanying drawing below.
With reference to shown in Figure 2; New LED integrated optical source module of the present invention comprises base main body 11, LED crystal bonding area 13, is arranged on the base main body 1 by white or transparent silica gel and the mixing cured colloid barricade 12 that forms of fluorescent material; This colloid barricade 12 surrounds at least one closed area with crystal bonding area; Led chip is arranged in the closed area; The height of said colloid barricade is 0.2~10mm, and between 0.05~30mm, colloid barricade first-selection according to the invention is an one-component white organic silicon rubber material to said colloid barricade to the distance of LED chip; Base main body 11 is provided with location hole 14.
The manufacture method of New LED integrated optical source module of the present invention may further comprise the steps:
1) inspecting substrate and surface treatment: base main body is encapsulated preceding inspection and dehumidification treatments;
2) solid brilliant: the position that on base main body, configures is coated with crystal-bonding adhesive, and led chip is positioned over scribbles the crystal-bonding adhesive place, and solid brilliant good base main body is toasted, and the oven dry crystal-bonding adhesive is fixed on the base main body LED wafer;
3) bonding wire: be electrically connected with the positive and negative electrode pad of base main body respectively with the both positive and negative polarity of gold thread with led chip;
4) manufacture the colloid barricade: the position of on base main body, setting; The accurate automatically dropping glue equipment that employing has a mechanical arm carries out setting-out and manufactures barricade; And the substrate that will finish barricade glue toasts, and the temperature during baking is 50~250 ° of C, preferred 150 ° of C; Stoving time is 5~150 minutes, preferred 60 minutes;
5) transparent adhesive tape coating and curing: be coated with layer of transparent glue around the led chip behind bonding wire, be closed chip and gold thread, the LED wafer that has been coated with transparent adhesive tape is toasted, make its curing;
6) fluorescent material coating and curing: on the transparent adhesive tape after the curing, be coated with layer of fluorescent powder, the LED wafer that has been coated with fluorescent material is toasted, make its curing.
The manufacture technology of said colloid barricade adopts the head and the tail closure of the setting-out function of automatically dropping glue equipment to manufacture and forms, through can accurately control the face shaping and the size of organic silicon rubber moulding to automatically dropping glue equipment setting program.Making the fluorescent material glue mixed layer that ready-made organic silicon rubber barricade can stop led chip zone flows to outside the light-emitting zone because of the fluid mechanics relation; And the colloid barricade size controlled; Good fortune reduces the use amount of fluorescent material glue greatly, effectively reduces the production cost of LED device.The organic silicon rubber barricade can effectively be controlled the amount and the even equal property of thickness of the fluorescent material glue mixed layer in the inner led chip of barricade zone; Thereby effectively control the light effect that goes out on the LED device all directions; Reduced the optical energy loss of led chip; The light that makes fluorescent material on all directions excite is consistent with the radiative ratio of led chip, has improved the luminous efficiency and the light-emitting uniformity of LED chip.The manufacture technology equipment of organic silicon rubber barricade according to the invention is simple, can directly accomplish with existing automatically dropping glue equipment, do not need newly added equipment, and manufacture technology is simple, so production efficiency is high, and processing cost is low.Organic silicon rubber barricade according to the invention adheres to and is solidificated on substrate, has protection against the tide, waterproof; Anti-ozone, radiation hardness, characteristics such as weather-resistant (high temperature resistant 260 ℃); Guarantee the air-tightness and the physical strength of LED device, improved the life-span and the stability of LED device.

Claims (9)

1. New LED integrated optical source module; Comprise base main body and be arranged on the led chip on the base main body; It is characterized in that; Said base main body is provided with the colloid barricade, and said colloid barricade surrounds at least one closed zone with led chip crystal bonding area on the base main body, and said led chip is arranged in the said closed zone.
2. New LED integrated optical source module according to claim 1 is characterized in that, said colloid barricade is that the mixture solidified of white or Transparent color silica gel and phosphor powder forms.
3. New LED integrated optical source module according to claim 2 is characterized in that, said mixture adopts the mode of hot curing to solidify, and its heat curing temperature is in 50~250 degree, and thermal curing time is in 5~150 minutes.
4. New LED integrated optical source module according to claim 2 is characterized in that, said mixture adopts the mode of ultra-violet curing to solidify, and the wavelength of its ultra-violet curing moulding is in the scope of 10 ~ 400nm, and the time of ultra-violet curing moulding is within 2s-100s.
5. according to the described arbitrary New LED integrated optical source module of claim 1-4, it is characterized in that the height of said colloid barricade is 0.2~10mm.
6. New LED integrated optical source module according to claim 5 is characterized in that, said colloid barricade to the distance of LED chip between 0.05~30mm.
7. the preparation method like the said arbitrary New LED integrated optical source module of claim 1-6 is characterized in that, may further comprise the steps:
(1) inspecting substrate and surface treatment: substrate is encapsulated preceding inspection and dehumidification treatments;
(2) solid brilliant: the assigned address at substrate is coated with crystal-bonding adhesive, and led chip is positioned over scribbles the crystal-bonding adhesive place, and solid brilliant good substrate is toasted, and the oven dry crystal-bonding adhesive is fixed on the substrate led chip;
(3) bonding wire: the both positive and negative polarity of led chip is electrically connected with the positive and negative electrode pad of substrate respectively with gold thread;
(4) manufacture the colloid barricade: at the assigned address of substrate; The accurate automatically dropping glue equipment that employing has a mechanical arm carries out setting-out and manufactures barricade; And will finish grade substrate of wall glue and toast, the temperature during baking is 50~250 ° of C, stoving time is 5~150 minutes;
(5) transparent adhesive tape coating and curing: around led chip, be coated with layer of transparent glue, be closed chip and gold thread, the LED wafer that has been coated with transparent adhesive tape is toasted, make its curing;
(6) fluorescent material coating and curing: on the transparent adhesive tape after the curing, be coated with layer of fluorescent powder, the LED wafer that has been coated with fluorescent material is toasted, make its curing.
8. the preparation method of New LED integrated optical source module according to claim 7 is characterized in that, the preferred 150 ° of C of baking temperature in the said step (4).
9. the preparation method of New LED integrated optical source module according to claim 7 is characterized in that, stoving time is preferred 60 minutes in the said step (4).
CN2012102387537A 2012-07-11 2012-07-11 Novel LED (light emitting diode) integrated light source module and preparation method thereof Pending CN102738372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2012102387537A CN102738372A (en) 2012-07-11 2012-07-11 Novel LED (light emitting diode) integrated light source module and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2012102387537A CN102738372A (en) 2012-07-11 2012-07-11 Novel LED (light emitting diode) integrated light source module and preparation method thereof

Publications (1)

Publication Number Publication Date
CN102738372A true CN102738372A (en) 2012-10-17

Family

ID=46993494

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012102387537A Pending CN102738372A (en) 2012-07-11 2012-07-11 Novel LED (light emitting diode) integrated light source module and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102738372A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022213A (en) * 2014-04-11 2014-09-03 深圳市迈克光电子科技有限公司 Remote phosphor COB integrated light source and preparation method thereof
CN105118828A (en) * 2015-09-01 2015-12-02 宏齐光电子(深圳)有限公司 High-color-rendering-index area source and preparation method
CN113448074A (en) * 2020-03-25 2021-09-28 北京威斯顿亚太光电仪器有限公司 Illumination light source of disposable hard tube mirror
CN114916152A (en) * 2022-04-21 2022-08-16 昆山丘钛微电子科技股份有限公司 Method for sealing bracket by camera module

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1564332A (en) * 2004-03-30 2005-01-12 深圳市蓝科电子有限公司 Method of mfg. white light LED
CN101783384A (en) * 2010-02-04 2010-07-21 九江联辉光电有限公司 Method for sealing large-power LED
CN101789483A (en) * 2010-02-05 2010-07-28 江苏伯乐达光电科技有限公司 Coating method of light-emitting diode fluorescent powder
CN101916811A (en) * 2010-07-09 2010-12-15 电子科技大学 Light-emitting diode and preparation method thereof
CN101964390A (en) * 2010-10-28 2011-02-02 深圳市天电光电科技有限公司 High-power LED packaging structure and packaging method thereof
CN101964389A (en) * 2010-08-12 2011-02-02 木林森电子有限公司 Chip integrated high-power LED packaging process and product thereof
TW201110421A (en) * 2009-09-04 2011-03-16 Paragon Sc Lighting Tech Co LED package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same
CN102148296A (en) * 2010-12-28 2011-08-10 广州市鸿利光电股份有限公司 LED (Light Emitting Diode) manufacturing method and LED device
CN102244165A (en) * 2011-07-20 2011-11-16 福建泰德视讯数码科技有限公司 LED encapsulation process

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1564332A (en) * 2004-03-30 2005-01-12 深圳市蓝科电子有限公司 Method of mfg. white light LED
TW201110421A (en) * 2009-09-04 2011-03-16 Paragon Sc Lighting Tech Co LED package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same
CN101783384A (en) * 2010-02-04 2010-07-21 九江联辉光电有限公司 Method for sealing large-power LED
CN101789483A (en) * 2010-02-05 2010-07-28 江苏伯乐达光电科技有限公司 Coating method of light-emitting diode fluorescent powder
CN101916811A (en) * 2010-07-09 2010-12-15 电子科技大学 Light-emitting diode and preparation method thereof
CN101964389A (en) * 2010-08-12 2011-02-02 木林森电子有限公司 Chip integrated high-power LED packaging process and product thereof
CN101964390A (en) * 2010-10-28 2011-02-02 深圳市天电光电科技有限公司 High-power LED packaging structure and packaging method thereof
CN102148296A (en) * 2010-12-28 2011-08-10 广州市鸿利光电股份有限公司 LED (Light Emitting Diode) manufacturing method and LED device
CN102244165A (en) * 2011-07-20 2011-11-16 福建泰德视讯数码科技有限公司 LED encapsulation process

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104022213A (en) * 2014-04-11 2014-09-03 深圳市迈克光电子科技有限公司 Remote phosphor COB integrated light source and preparation method thereof
CN105118828A (en) * 2015-09-01 2015-12-02 宏齐光电子(深圳)有限公司 High-color-rendering-index area source and preparation method
CN113448074A (en) * 2020-03-25 2021-09-28 北京威斯顿亚太光电仪器有限公司 Illumination light source of disposable hard tube mirror
CN114916152A (en) * 2022-04-21 2022-08-16 昆山丘钛微电子科技股份有限公司 Method for sealing bracket by camera module

Similar Documents

Publication Publication Date Title
CN103022325B (en) The LED encapsulation structure of application long distance formula phosphor powder layer and method for making thereof
CN102148296B (en) LED (Light Emitting Diode) manufacturing method and LED device
CN105977245A (en) Color-temperature-adjustable COB packaging structure and packaging method thereof
CN101592291A (en) LED lamp preparation method that a kind of colour temperature is adjustable and LED lamp
CN101521257B (en) Prefabricated fluorescent powder film type white light LED packaging structure and preparation method thereof
CN103840063A (en) LED package substrate and manufacturing method thereof
CN101656290A (en) Process for encapsulating light-emitting diode
CN201708188U (en) Ceramic high-power light emitting diode
CN102738372A (en) Novel LED (light emitting diode) integrated light source module and preparation method thereof
CN102709448A (en) White light LED packaging structure and method
CN107910426B (en) Magnetic fluorescent powder composite material and plane coating method thereof
CN104253199A (en) A LED package structure and a manufacture method thereof
CN108615805A (en) A kind of wafer-level package white chip and its packaging method
CN202549918U (en) Fluorescent powder coating and packaging structure
CN101694861A (en) Encapsulation method preventing LED fluorescent powder from precipitation
CN106601897A (en) Method for manufacturing chip on board (COB) light source with white adhesive surface package
CN209016051U (en) A kind of integrated LED encapsulating structure using WLP
CN103000791B (en) Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method
CN106505138A (en) A kind of LED encapsulation structure and preparation method thereof
CN106356437A (en) White LED (light emitting diode) packaging device and preparation method thereof
CN205231108U (en) White light LED wafer packaging structure
CN105047796B (en) Full-ambient-light L ED light source and preparation method thereof
CN109390454B (en) Fluorescent thin film structure for LED (light-emitting diode), preparation method thereof and light-emitting source
CN209344122U (en) A kind of quantum dot LED packaging
CN206322732U (en) A kind of LED encapsulation structure

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20121017