CN108615805A - A kind of wafer-level package white chip and its packaging method - Google Patents
A kind of wafer-level package white chip and its packaging method Download PDFInfo
- Publication number
- CN108615805A CN108615805A CN201611136251.8A CN201611136251A CN108615805A CN 108615805 A CN108615805 A CN 108615805A CN 201611136251 A CN201611136251 A CN 201611136251A CN 108615805 A CN108615805 A CN 108615805A
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- high temperature
- led chip
- chip
- temperature membrane
- membrane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
The present invention provides a kind of wafer-level package white chip and its packaging methods, wherein this method includes：LED chip is sequentially arranged in the first high temperature film surface by S1；Second high temperature membrane is closely affixed on LED chip surface by S2；The fluorescent glue that fluorescent powder and silica gel are uniformly mixed to get is filled up gap and the solidification between LED chip by S3；S4 removes the second high temperature membrane, and cutting obtains the LED chip that single surrounding includes fluorescent glue；Third high temperature film is closely affixed on LED chip surface in step S4 by S5；The obtained white glue that titanium dioxide, silica and silica gel uniformly mix is filled up gap and solidification between LED chip by S6；S7 removes third high temperature film, and pastes fluorescence diaphragm on LED chip surface；S8 removes the first high temperature membrane, and cutting is obtained single chip grade encapsulation white chip, the light emitting angle of LED chip is increased with this, improves the light emission luminance of LED chip, improves hot spot.
Description
Technical field
The invention belongs to semiconductor applications, and in particular to a kind of wafer-level package white chip and its packaging method.
Background technology
In recent years, LED (Light Emitting Diode, light emitting diode) lamps because with reaction speed is fast, brightness is high,
The advantages that long lifespan, energy conservation and environmental protection, is able to fast development, has gradually substituted traditional incandescent lamp and energy-saving lamp, becomes a new generation
Energy-saving lighting lamp.
What CSP (Chip Scale Package, wafer-level package) was that recent LED industry grows up a kind of reducing cost
Novel white-light chip, the ratio between chip area and package area can be allowed more than 1:1.14, close to 1:1 ideal situation,
Die bottom surface setting electrode makes the electrode of bottom surface leak outside directly in the upper surface of chip and side package on package colloid, due to
This encapsulating structure greatly reduces cost and volume without holder or substrate, improves electrical contact performance, is widely used to carry on the back
Light, mobile phone flashlight market.It is higher and higher to the lighting requirements of white chip with the development of LED industry, how to reduce envelope
It is always the target that people pursue that light emission luminance is further increased while filling volume.
Invention content
Based on the above issues, the object of the present invention is to provide a kind of wafer-level package white chip and its packaging method, have
Effect increases the light emitting angle of existing chip-scale white chip.
A kind of chip-scale packaging method, including：
LED chip is sequentially arranged in the first high temperature film surface by S1；
Second high temperature membrane is closely affixed on LED chip surface by S2, and the highest heatproof of second high temperature membrane is high less than first
Warm film；
The fluorescent glue that fluorescent powder and silica gel are uniformly mixed to get is filled up gap and the solidification between LED chip by S3；
S4 removes the second high temperature membrane, and cutting obtains the LED chip that single surrounding includes fluorescent glue；
Third high temperature film is closely affixed on LED chip surface in step S4 by S5, and the highest heatproof of the third high temperature film is low
In the first high temperature membrane；
The obtained white glue that titanium dioxide, silica and silica gel uniformly mix is filled up the gap between LED chip simultaneously by S6
Solidification；
S7 removes third high temperature film, and pastes fluorescence diaphragm on LED chip surface；
S8 removes the first high temperature membrane, and cutting obtains single chip grade encapsulation white chip.
It is further preferred that in step s 2：Second high temperature membrane is closely affixed on LED chip surface and places it in vacuum
In device, the heatproof of second high temperature membrane is less than the first high temperature membrane；Include in step s3：S31 is equal by fluorescent powder and silica gel
The even fluorescence glue point being mixed to get is in LED chip surrounding；S32 opens vacuum plant, and fluorescent glue is automatic under the action of pressure difference
Fill up the gap between LED chip.
It is further preferred that in step s 5：By third high temperature film be closely affixed in step S4 LED chip surface and by its
It is placed in vacuum plant, the heatproof of the third high temperature film is less than the first high temperature membrane；
Include in step s 6：
The obtained white glue point that S61 uniformly mixes titanium dioxide, silica and silica gel is in LED chip surrounding；
S62 opens vacuum plant, and white glue fills up the gap between LED chip automatically under the action of pressure difference.
It is further preferred that further comprising in step s 5：The first high temperature membrane is removed, the LED that will be obtained in step S4
Chip is turned to successively in the first new high temperature membrane.
It is further preferred that in step s 4, the highest heatproof for being heated to the second high temperature membrane removes the second high temperature membrane；
In the step s 7, it is heated to the highest heatproof removal third high temperature film of third high temperature film；
In step S51 and step S8, the highest heatproof for being heated to the first high temperature membrane removes the first high temperature membrane.
It is further preferred that second high temperature membrane and the highest heatproof of third high temperature film are 130 DEG C~140 DEG C；
The highest heatproof of first high temperature membrane is 180 DEG C.
The present invention also provides a kind of wafer-level package white chips, including：LED chip, fluorescent adhesive layer, white adhesive layer and
Fluorescence diaphragm, wherein the fluorescent adhesive layer is set to the surrounding of LED chip, and white adhesive layer is set on the outside of fluorescent adhesive layer, and fluorescence diaphragm is set
In LED chip upper surface.
Wafer-level package white chip and its packaging method, advantage provided by the invention are：
In white chip provided by the invention and its packaging method, fluorescent glue is set between LED chip and peripheral white glue
Layer, with this LED chip in the case where lighting, the blue light that LED chip is sent out will excite the fluorescent adhesive layer of surrounding, to increase
The light emitting angle of LED chip improves the light emission luminance of LED chip, improves hot spot.
Description of the drawings
Fig. 1-Fig. 8 is white chip packaging method flow diagram in the present invention.
The first high temperature membranes of 1-, 2-LED chips, the second high temperature membranes of 3-, 4- fluorescent glues, 5- third high temperature films, 6- white glue, 7- are glimmering
Light diaphragm, 8-UV films,
Specific implementation mode
In order to make the technical problems, technical solutions and beneficial effects solved by the present invention be more clearly understood, below in conjunction with
Embodiment, the present invention is further described in detail.
1：The flip LED chips 2 that size is 45mil (mil) are placed on according to a determining deviation, such as 10~150 μm (microns)
(caking property is lost in one resistance to 180 DEG C of the first high temperature membrane 1 at 180 DEG C or more), (3 LED chips is only shown as shown in Figure 1
The case where)；
2：Second high temperature membrane 3 (can lose viscosity at 130 DEG C~140 DEG C or more) is tightly attached to LED chip surface, it is ensured that
There is no air between LED chip 2 and the second high temperature membrane 3, as shown in Fig. 2, and they are placed in vacuum plant 4 (not showing in figure
Go out)；
3：According to certain mass ratio, such as 1:0.2~3 uniform mixed fluorescent powder and silica gel obtain fluorescent glue 4 and by its points
Around LED chip；Vacuum plant is opened, destroy vacuum plant in vacuum environment, fluorescent glue under the action of pressure difference,
It fills up the gap between LED chip, and allows fluorescence adhesive curing at 100 DEG C of high temperature, as shown in Figure 3；
4：At 130~140 DEG C, the second high temperature membrane is made to lose viscosity, removes the second high temperature membrane, by blade against chip it
Between heartcut at single surrounding carry fluorescent adhesive layer LED chip, specifically, 1~50um of the fluorescent glue thickness；
5：At 180 DEG C of high temperature, the first high temperature membrane of LED chip will be supported to lose viscosity, and LED chip is turned to newly
Film on, pour into again in the first new high temperature membrane and (lose caking property at 180 DEG C or more)；
6：Third high temperature film 3 (can lose viscosity at 130 DEG C~140 DEG C or more) is tightly attached to LED chip surface, it is ensured that
There is no air between LED chip 2 and third high temperature film 3, as shown in figure 4, and they are placed in vacuum plant 4 (not showing in figure
Go out)；
7：According to silica gel:The mass ratio of (titanium dioxide+silica) is 1:0.3~0.7, by titanium dioxide, silica with
Silica gel mixes into white glue 6 (high reflectance glue), by white glue point around chip；Vacuum plant is opened, vacuum plant is destroyed
Interior vacuum environment, white glue are filled in the gap between LED chip under the action of pressure difference, and allow at 100 DEG C of high temperature white
Adhesive curing, as shown in Figure 5；
8：At 130~140 DEG C, third high temperature film is lost into viscosity, removes third high temperature film；Later by fluorescence diaphragm 7
It is placed on LED chip surface, as shown in fig. 6, and under the outer force effect such as vacuum, pressure and high temperature, making fluorescence diaphragm and chip
Between closely stick together；It should be noted that no matter boundaries are still waited between fluorescence diaphragm and chip between fluorescence diaphragm and white glue
Face all needs plasma cleaner to be cleaned, the viscosity between each interface；
9：At 180 DEG C of high temperature, remove the first high temperature membrane new in the LED chip containing fluorescence diaphragm, and pass through fluorescence
Diaphragm face sticks LED chip on UV (ultraviolet, ultraviolet) film 8, as shown in Figure 7；
10：With blade by integral cutting at individual wafer-level package white chip one by one, as shown in Figure 8；
11：By the sorting of wafer-level package white chip, adhesive tape, storage.
The above, the only specific implementation mode in the present invention, but scope of protection of the present invention is not limited thereto, appoints
Within the technical scope disclosed by the invention, transforming or replacing for can readily occurring in should all be covered at this people what is familiar with the technology
Within the protection domain of invention.Therefore, the scope of protection of the invention shall be subject to the scope of protection specified in the patent claim.
Claims (7)
1. a kind of chip-scale packaging method, which is characterized in that the chip-scale packaging method includes：
LED chip is sequentially arranged in the first high temperature film surface by S1；
Second high temperature membrane is closely affixed on LED chip surface by S2, and the highest heatproof of second high temperature membrane is less than the first high temperature membrane；
The fluorescent glue that fluorescent powder and silica gel are uniformly mixed to get is filled up gap and the solidification between LED chip by S3；
S4 removes the second high temperature membrane, and cutting obtains the LED chip that single surrounding includes fluorescent glue；
Third high temperature film is closely affixed on LED chip surface in step S4 by S5, and the highest heatproof of the third high temperature film is less than the
One high temperature membrane；
The obtained white glue that titanium dioxide, silica and silica gel uniformly mix is filled up gap and solidification between LED chip by S6；
S7 removes third high temperature film, and pastes fluorescence diaphragm on LED chip surface；
S8 removes the first high temperature membrane, and cutting obtains single chip grade encapsulation white chip.
2. chip-scale packaging method as described in claim 1, which is characterized in that
In step s 2：Second high temperature membrane is closely affixed on LED chip surface and is placed it in vacuum plant, described second is high
The heatproof of warm film is less than the first high temperature membrane；
Include in step s3：
The fluorescence glue point that fluorescent powder and silica gel are uniformly mixed to get by S31 is in LED chip surrounding；
S32 opens vacuum plant, and fluorescent glue fills up the gap between LED chip automatically under the action of pressure difference.
3. chip-scale packaging method as described in claim 1, which is characterized in that
In step s 5：Third high temperature film is closely affixed on LED chip surface in step S4 and is placed it in vacuum plant, institute
The heatproof for stating third high temperature film is less than the first high temperature membrane；
Include in step s 6：
The obtained white glue point that S61 uniformly mixes titanium dioxide, silica and silica gel is in LED chip surrounding；
S62 opens vacuum plant, and white glue fills up the gap between LED chip automatically under the action of pressure difference.
4. chip-scale packaging method as claimed in claim 3, which is characterized in that further comprise in step s 5：Removal the
The LED chip obtained in step S4 is turned in the first new high temperature membrane by one high temperature membrane successively.
5. chip-scale packaging method as claimed in claim 4, which is characterized in that
In step s 4, the highest heatproof for being heated to the second high temperature membrane removes the second high temperature membrane；
In the step s 7, it is heated to the highest heatproof removal third high temperature film of third high temperature film；
In step S51 and step S8, the highest heatproof for being heated to the first high temperature membrane removes the first high temperature membrane.
6. the chip-scale packaging method as described in claim 1-5 any one, which is characterized in that
Second high temperature membrane and the highest heatproof of third high temperature film are 130 DEG C~140 DEG C；
The highest heatproof of first high temperature membrane is 180 DEG C.
7. a kind of wafer-level package white chip, which is characterized in that the white chip includes：LED chip, fluorescent adhesive layer,
White adhesive layer and fluorescence diaphragm, wherein the fluorescent adhesive layer is set to the surrounding of LED chip, and white adhesive layer is set on the outside of fluorescent adhesive layer,
Fluorescence diaphragm is set to LED chip upper surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611136251.8A CN108615805B (en) | 2016-12-12 | 2016-12-12 | Chip-level packaging white light chip and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611136251.8A CN108615805B (en) | 2016-12-12 | 2016-12-12 | Chip-level packaging white light chip and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108615805A true CN108615805A (en) | 2018-10-02 |
| CN108615805B CN108615805B (en) | 2020-06-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611136251.8A Active CN108615805B (en) | 2016-12-12 | 2016-12-12 | Chip-level packaging white light chip and packaging method thereof |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
| CN111933759A (en) * | 2020-08-17 | 2020-11-13 | 上海旭择电子零件有限公司 | Method for preparing surface light source COB by adopting two-color CSP chip and surface light source COB |
| CN111969094A (en) * | 2020-09-02 | 2020-11-20 | 安晟技术(广东)有限公司 | Packaging structure of LED chip |
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| JP2009147312A (en) * | 2007-11-20 | 2009-07-02 | Nanoteco Corp | White led device and method of manufacturing the same |
| CN201885056U (en) * | 2010-09-19 | 2011-06-29 | 深圳帝光电子有限公司 | LED backlight module and display terminal |
| CN103534822A (en) * | 2011-04-20 | 2014-01-22 | 株式会社Elm | Light emitting device and method for manufacturing same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111341897A (en) * | 2018-12-19 | 2020-06-26 | 深圳市聚飞光电股份有限公司 | LED packaging structure, manufacturing method thereof and LED flash lamp |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111933759A (en) * | 2020-08-17 | 2020-11-13 | 上海旭择电子零件有限公司 | Method for preparing surface light source COB by adopting two-color CSP chip and surface light source COB |
| CN111969094A (en) * | 2020-09-02 | 2020-11-20 | 安晟技术(广东)有限公司 | Packaging structure of LED chip |
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| CN108615805B (en) | 2020-06-09 |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Patentee before: LATTICE POWER (JIANGXI) Corp. |
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