CN111092142A - White light LED chip and preparation method thereof - Google Patents
White light LED chip and preparation method thereof Download PDFInfo
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- CN111092142A CN111092142A CN201911388606.6A CN201911388606A CN111092142A CN 111092142 A CN111092142 A CN 111092142A CN 201911388606 A CN201911388606 A CN 201911388606A CN 111092142 A CN111092142 A CN 111092142A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention provides a white light LED chip and a preparation method thereof, wherein the preparation method comprises the following steps: s10, arranging the flip LED chips on the surface of the first support film according to a rule, wherein the surface of the light emitting side of each LED chip faces upwards; s20, sequentially attaching the fluorescent films cut into the preset size to the surfaces of the LED chips to cover the light emitting surfaces of the LED chips; s30, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film; s40, marking the electrodes of the LED chip on the high-reflection white glue on the side edge of the fluorescent film; s50, cutting the LED chips in the cutting path and removing the first supporting film to obtain a single white LED chip with electrode marks. The technical problem that the surface of the existing white light LED chip can not visually identify the chip electrode is effectively solved.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a white light LED chip and a preparation method thereof.
Background
In a packaging factory, in order to obtain better light spots, sapphire chips are packaged into more and more single-sided light emitting application forms, and the purpose is achieved by enclosing high-reflection white glue around the inverted sapphire chips. However, there is a problem in packaging a flip-chip sapphire chip into a single-sided light emission at present: the fluorescent film can cover the whole chip surface, shield the electrode mark, can not distinguish the electrode of chip from the chip surface.
Disclosure of Invention
In order to overcome the defects, the invention provides a white light LED chip and a preparation method thereof, which effectively solve the technical problem that the surface of the existing white light LED chip can not visually identify the chip electrode.
The technical scheme provided by the invention is as follows:
a preparation method of a white light LED chip comprises the following steps:
s10, arranging flip LED chips on the surface of the first supporting film according to a rule, wherein the surface of the light emitting side of each LED chip faces upwards;
s20, sequentially attaching the fluorescent films cut into preset sizes to the surfaces of the LED chips to cover the light emitting surfaces of the LED chips;
s30, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film;
s40, marking the electrodes of the LED chip on the high-reflection white glue on the side edge of the fluorescent film;
and S50, cutting the cutting path between the LED chips and removing the first supporting film to obtain a single white light LED chip with an electrode mark.
A white LED chip, comprising:
flip-chip LED chip;
the fluorescent membrane is arranged on the light-emitting side surface of the LED chip;
the high-reflection white glue is arranged around the LED chip and the fluorescent film sheet; and
and (3) electrode identification on the surface of the high-reflection white glue at the side edge of the fluorescent membrane.
In the white light LED chip and the preparation method thereof provided by the invention, the electrodes of the LED chip are marked on the high-reflection white glue on the side edge of the fluorescent film, so that the electrodes of the chip can be directly identified from the surface of the chip. In addition, after the high-reflection white glue is filled, the high-reflection white glue is ground, the flatness of the white glue on the periphery of the chip is improved, and the brightness is improved. Moreover, the surface of the fluorescent glue layer in the fluorescent film comprises a first glue layer containing titanium dioxide, so that the spot uniformity and the luminous brightness of the white LED chip are effectively improved.
Drawings
Fig. 1 to 5 are schematic flow charts of an embodiment of a method for manufacturing a white light LED chip according to the present invention.
FIGS. 6 to 9 are schematic flow charts of another embodiment of a method for manufacturing a white light LED chip according to the present invention.
Reference numerals:
1-a first supporting film, 2-an LED chip, 3-a fluorescent film sheet, 31-a fluorescent glue layer, 32-a first silica gel layer, 4-high reflection white glue, 5-an electrode identification area and 6-a bowl cup.
Detailed Description
In order to more clearly illustrate the embodiment of the present invention or the technical solutions in the prior art, the following description will explain embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
As shown in fig. 1 to 5, an embodiment of a method for manufacturing a white LED chip 2 according to the present invention is schematically illustrated in a flow chart, and as shown in the drawing, the method includes:
s10 flip-chip LED chips 2 are regularly arranged on the surface of the first support film 1 with the light-emitting side surfaces of the LED chips 2 facing upward, as shown in fig. 1. Specifically, the shape and the pitch of the arrangement of the LED chips 2 are adjusted according to actual requirements, which is not limited herein. The first support film 1 is selected based on the criterion that the LED chip 2 is easily removed after the package is completed, such as a high temperature UV film, a thermal peeling film, and the like.
S20, the fluorescent film 3 cut into a predetermined size is sequentially attached to the surface of each LED chip 2 to cover the light emitting surface of the LED chip 2. In order to ensure the light emitting effect of the LED chip 2, the area of the fluorescent film 3 is larger than that of the LED chip 2, and the length and width ratio of the fluorescent film 3 is 50-150 μm larger than that of the LED chip 2, so that the fluorescent film 3 can fully cover the light emitting surface of the LED chip 2. The fluorescent film sheet is prepared from silica gel and fluorescent powder in a certain mass ratio (silica gel: yellow powder: red powder: 1: 0.7-0.99: 0.01-0.3), and the thickness of the fluorescent film sheet ranges from 30 μm to 200 μm.
In another embodiment, in order to further improve the light emitting brightness of the LED chip, the fluorescent film 3 includes a first silica gel layer 32 on the surface of the fluorescent adhesive layer 31 in addition to the fluorescent adhesive layer 31, as shown in fig. 2. In the preparation of the fluorescent membrane 3, firstly, uniformly stirring silica gel and fluorescent powder in a certain mass ratio (silica gel: yellow powder: red powder is 1: 0.7-0.99: 0.01-0.3), and coating the surface of a second support film (which has viscosity at the temperature of lower than 180 ℃ and basically has no viscosity or slight viscosity after being baked for 3-5 minutes at the temperature of 180 ℃) to form a fluorescent glue layer 31 with a first preset thickness; then, baking and forming the coated fluorescent glue layer 31; then, coating a first silica gel layer 32 with a second preset thickness on the surface of the fluorescent glue layer 31, wherein titanium dioxide is mixed in the first silica gel layer 32 (the mass ratio of silica gel to titanium dioxide is 1: 0.004-0.015); then, baking the coated first silica gel layer 32 and the coated fluorescent glue layer 31; and finally, cutting according to the size of the LED chip 2 to obtain the fluorescent membrane 3 with a preset size. When the fluorescent film 3 is adhered to the surface of the LED chip 2, one side of the fluorescent adhesive layer 31 is adhered to the surface of the LED chip 2. In the fluorescent film, the thickness of the fluorescent glue layer 31 is 30-150 μm, and the thickness of the first glue layer 32 is 10-100 μm.
S30 filling the highly reflective white glue 4 between the LED chips 2 until it is level with the height of the fluorescent film 3, as shown in fig. 3. In order to ensure the surface flatness of the filled high-reflection white glue 4 and the LED chip 2, a grinding step is further included after the filling, as shown in fig. 4, specifically, after the grinding is performed to the first silica gel layer 32 in the fluorescent film 3, the grinding is continued for 0-5 μm.
S40, marking the electrode of the LED chip 2 on the high-reflection white glue 4 on the side edge of the fluorescent film 3;
s50 cutting the first supporting film 1 at the cutting path between the LED chips 2 to obtain a single white LED chip 2 with electrode marks as shown in fig. 5, wherein the fluorescent film side includes the electrode mark region 5.
In an improvement of the above embodiment, before the step S20, a step of dispensing silica gel (the amount of silica gel is 1/2-3/4 of the upper surface area of the LED chip, and the viscosity is 1500-4500 m.pas) on the light-emitting side surface of the LED chip 2 is further included, that is, a second silica gel layer is formed on the light-emitting side surface of the LED chip 2. Then, the fluorescence film 3 cut to a predetermined size is sequentially attached to the surface of each LED chip 2 to cover the light emitting surface of the LED chip 2, as shown in fig. 6 (the second silicone layer is not shown). Because before the fluorescent film is pasted, silica gel is dotted on the surface of the LED chip, in the process of pasting the fluorescent film, a bowl 6 is formed on the contact point of the fluorescent film and the LED chip, so that the luminous brightness of the LED chip is further improved.
Then, filling high-reflection white glue 4 between the LED chips 2 until the height of the LED chips is equal to that of the fluorescent film 3, as shown in FIG. 7; polishing is performed on the surface of the fluorescent film (after polishing to the first silica gel layer 32 in the fluorescent film 3, the polishing is continued for 0-5 μm), as shown in fig. 8. Marking the electrode of the LED chip 2 on the high-reflection white glue 4 on the side edge of the fluorescent film 3; cutting is carried out on the cutting streets between the LED chips 2 and the first support film 1 is removed, so as to obtain a single white light LED chip 2 with electrode marks as shown in FIG. 9, wherein the side edge of the fluorescent film comprises an electrode mark area 5.
In one example, the method comprises the following steps:
1: weighing silica gel, yellow powder and red powder according to the mass ratio of 1:0.8:0.1, uniformly stirring and defoaming in vacuum; placing on a second support film, scraping out a fluorescent adhesive layer with the thickness of 100 mu m, and baking the fluorescent adhesive layer for 0.4h at the temperature of 70 ℃; then, a first silica gel layer with the thickness of 50 microns and containing a small amount of titanium dioxide (silica gel: titanium dioxide is 1:0.01) is scraped on the surface of the fluorescent gel layer, and the first silica gel layer is placed at 150 ℃ and baked for 2 hours to obtain a whole fluorescent film sheet; finally, the LED chip is cut according to the size of the LED chip to obtain a single fluorescent film, and the size (length and width) of the single fluorescent film is 150 mu m larger than that of the chip.
2: the LED chips are arranged on the first support film at a certain distance.
3: and (3) dispensing silica gel on the light-emitting side surface of the LED chip, wherein the amount of the silica gel is 1/2 of the upper surface area of the chip, then pasting the single fluorescent film piece on the LED chip, and baking for 2h at 150 ℃.
4: and filling high-reflection white glue in the space between the two chips, wherein the height of the high-reflection white glue is equal to or slightly higher than that of a fluorescent membrane in the LED chip according to experience, and baking the high-reflection white glue at 150 ℃ for 2 h.
5: and (3) placing the cured whole chip into an oven at 180 ℃, baking for 3-5 minutes, taking down the first support film, attaching the UV film on the whole chip, and contacting the electrode surface of the LED chip with the UV film.
6: and grinding the high-reflection white glue possibly overflowing from the surface of the LED chip and the fluorescent diaphragm by using a grinder until the first silica gel layer in the fluorescent diaphragm is 2 microns below.
7: and (3) marking electrode marks on the high-reflection white glue on the side edge of the packaged single white LED chip fluorescent membrane by using laser.
8: and cutting the LED chip with the electrode mark to obtain a single white light LED chip, splitting light, braiding and packaging.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. A preparation method of a white light LED chip is characterized by comprising the following steps:
s10, arranging flip LED chips on the surface of the first supporting film according to a rule, wherein the surface of the light emitting side of each LED chip faces upwards;
s20, sequentially attaching the fluorescent films cut into preset sizes to the surfaces of the LED chips to cover the light emitting surfaces of the LED chips;
s30, filling high-reflection white glue between the LED chips until the height of the LED chips is equal to that of the fluorescent film;
s40, marking the electrodes of the LED chip on the high-reflection white glue on the side edge of the fluorescent film;
and S50, cutting the cutting path between the LED chips and removing the first supporting film to obtain a single white light LED chip with an electrode mark.
2. The method for preparing a white LED chip according to claim 1, wherein the first support film is a high temperature UV film or a thermal release film.
3. The method for preparing a white LED chip according to claim 1 or 2, further comprising, before step S10, the step of preparing a fluorescent film:
s01, uniformly stirring the silica gel and the fluorescent powder in a certain mass ratio, and coating the surface of the second support film to form a fluorescent adhesive layer with a first preset thickness;
s02, baking the coated fluorescent glue layer;
s03, coating a first silica gel layer with a second preset thickness on the surface of the fluorescent glue layer, wherein titanium dioxide is mixed in the first silica gel layer;
s04, baking the coated first silica gel layer and the coated fluorescent glue layer;
and S05, cutting according to the size of the LED chip to obtain the fluorescent film with the preset size.
4. The method for preparing a white light LED chip according to claim 3, wherein the length and width of the fluorescent film is 50-150 μm greater than the length and width of the LED chip, and the fluorescent film is attached to the surface of the LED chip on one side of the fluorescent adhesive layer.
5. The method for preparing a white LED chip according to claim 1, 2 or 4, further comprising, before step S20:
s11, dispensing silica gel on the light-emitting side surface of the LED chip, wherein the viscosity of the silica gel is 1500-4500 m.pas.
6. The method for preparing a white LED chip according to claim 3, further comprising, after step S30:
s31, grinding the LED chip to the first silica gel layer in the fluorescent membrane, and then continuously grinding the LED chip to 0-5 μm.
7. A white LED chip, comprising:
flip-chip LED chip;
the fluorescent membrane is arranged on the light-emitting side surface of the LED chip;
the high-reflection white glue is arranged around the LED chip and the fluorescent film sheet; and
and (3) electrode identification on the surface of the high-reflection white glue at the side edge of the fluorescent membrane.
8. The white LED chip of claim 7, wherein the fluorescent film comprises a fluorescent glue layer and a first silica gel layer, the first silica gel layer is mixed with titanium dioxide, and the fluorescent film is attached to the surface of the LED chip on one side of the fluorescent glue layer.
9. The white LED chip of claim 7 or 8, wherein a second silicone layer is disposed between the LED chip and the fluorescent film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911388606.6A CN111092142A (en) | 2019-12-30 | 2019-12-30 | White light LED chip and preparation method thereof |
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| CN201911388606.6A CN111092142A (en) | 2019-12-30 | 2019-12-30 | White light LED chip and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117558851A (en) * | 2024-01-05 | 2024-02-13 | 晶能光电股份有限公司 | Light-emitting device, preparation method thereof and light-emitting array structure |
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Application publication date: 20200501 |