CN109755231A - White-light LED chip - Google Patents
White-light LED chip Download PDFInfo
- Publication number
- CN109755231A CN109755231A CN201811629250.6A CN201811629250A CN109755231A CN 109755231 A CN109755231 A CN 109755231A CN 201811629250 A CN201811629250 A CN 201811629250A CN 109755231 A CN109755231 A CN 109755231A
- Authority
- CN
- China
- Prior art keywords
- led chip
- metal electrode
- silica gel
- transparent silica
- fluorescent film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 89
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000000741 silica gel Substances 0.000 claims abstract description 62
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 62
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000003292 glue Substances 0.000 claims abstract description 36
- 239000012528 membrane Substances 0.000 claims abstract description 28
- 239000000843 powder Substances 0.000 claims abstract description 23
- 239000004408 titanium dioxide Substances 0.000 claims description 37
- 238000002156 mixing Methods 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000000499 gel Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 3
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of White-light LED chips, comprising: metal electrode, blue LED flip chip, transparent silica gel, high anti-glue and fluorescence diaphragm；Wherein, metal electrode is set to electrode pad surface in LED chip；Fluorescence diaphragm is set to the upper surface of LED chip, and area is greater than the area on LED chip surface, is symmetrical arranged along the center of LED chip, and the titania powder for being 0.5~5% doped with mass ratio in fluorescence diaphragm；Transparent silica gel is set to LED chip surrounding in arcuation towards fluorescence diaphragm in fluorescence membrane surface；High anti-glue is set to LED chip surrounding along transparent silica gel surface, and high anti-glue is without departing from the metal electrode on LED chip surface.In the White-light LED chip, while reducing the gap between White-light LED chip central point colour temperature and average color temperature, the Color uniformity of White-light LED chip is more preferable.
Description
Technical Field
The invention relates to the field of semiconductor light emitting diodes, in particular to a white light LED chip.
Background
An LED (Light Emitting Diode) is a solid semiconductor device capable of converting electrical energy into visible Light, and its Light Emitting principle is electroluminescence, i.e. after a forward current is applied to a PN junction, free electrons and holes are recombined to emit Light, thereby directly converting electrical energy into Light energy. LEDs, especially white LEDs, are widely used as a new illumination source material, have the advantages of fast response, good shock resistance, long lifetime, energy saving, environmental protection, and the like, and are rapidly developed, and are currently widely used in the fields of landscaping, indoor and outdoor illumination, and the like.
In traditional chip packaging, ceramic packaging and chip-scale packaging CSP products, because the area of an LED chip is smaller than the area coated by fluorescent powder, the phenomenon that the brightness of the surface of the LED chip is higher than the periphery of the chip and the color temperature is changed from the center of the chip to the peripheral direction synchronously can occur, through luminous angle testing and illuminometer testing, the color temperature of the central point of the chip is higher than the average color temperature by 200-500 k, as shown in figure 1, the abscissa represents the luminous angle of a lamp bead (the angle of the lamp bead in an integrating sphere), the ordinate represents the color temperature value (k) under different luminous angles, the difference between the color temperature of the central point of the chip and the color temperature of the periphery reaches 800k (Kelvin), and the surface luminous color of the lamp. However, in the application of the mobile phone flash lamp, the closer the color consistency, the center color temperature and the average color temperature of the LED in one area are, the better the effect is.
Disclosure of Invention
In view of the above problems, the present invention is directed to a white LED chip, which effectively solves the technical problem of large difference between the color temperature of the center point of the existing white LED chip and the average color temperature.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a white LED chip comprising: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection gel and a fluorescent membrane; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film is arranged on the upper surface of the LED chip, the area of the fluorescent film is larger than that of the surface of the LED chip, the fluorescent film is symmetrically arranged along the center of the LED chip, and titanium dioxide (TiO) with the mass ratio of 0.5-5% is doped in the fluorescent film2) Powder;
the transparent silica gel is arranged around the LED chip in an arc shape on the surface of the fluorescent film piece towards the fluorescent film piece;
the high reverse glue is arranged around the LED chip along the surface of the transparent silica gel, and the high reverse glue does not exceed the metal electrode on the surface of the LED chip.
A white LED chip comprising: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection glue, a fluorescent membrane and a titanium dioxide membrane layer; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film sheet is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the center of the LED chip;
the titanium dioxide film layer is arranged on the surface of the fluorescent film and has the same size as the fluorescent film; the titanium dioxide film layer is prepared by mixing titanium dioxide powder and transparent silica gel, and the mass ratio of the titanium dioxide powder is 0.5-5%;
the transparent silica gel is arranged around the LED chip in an arc shape on the surface of the fluorescent film piece towards the fluorescent film piece;
the high reverse glue is arranged around the LED chip along the surface of the transparent silica gel, and the high reverse glue does not exceed the metal electrode on the surface of the LED chip.
A white LED chip comprising: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection glue, a fluorescent membrane and a titanium dioxide membrane layer; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film sheet is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the center of the LED chip;
the titanium dioxide film layer is arranged on the surface of the fluorescent film and has the same size as the fluorescent film; the titanium dioxide film layer is prepared by mixing titanium dioxide powder and transparent silica gel, and the mass ratio of the titanium dioxide powder is 0.5-5%;
the transparent silica gel is arranged around the LED chip in a downward slope on the surface of the fluorescent film, and the angle range of the slope is 5-45 degrees (degrees);
the high anti-glue edge sets up all around LED chip, transparent silica gel and fluorescent screen, just the high anti-glue does not surpass the metal electrode on LED chip surface.
In the white light LED chip provided by the invention, at least the following beneficial effects can be brought:
1. adding 0.5-5% by mass of titanium dioxide powder into the fluorescent film, or covering a layer of titanium dioxide film (prepared by mixing 0.5-5% by mass of titanium dioxide and silica gel) on the surface of the fluorescent film, so that the color uniformity of the white LED chip is better while the difference between the color temperature of the center point of the white LED chip and the average color temperature is reduced;
2. the periphery of the white light LED chip is provided with high-reflection glue (high-reflectivity white glue), so that light emitted from the side surface is reflected by the high-reflection glue, and the purpose of single-side light emitting is achieved. In addition, the surface that connects is equipped with arcuation or slope form transparent silica gel at flip-chip blue light LED chip and fluorescent screen to this high anti-glue of filling on transparent silica gel surface demonstrates slope form equally, and the setting up of this structure makes the light reflection that flip-chip blue light LED chip side sent go back to become effective light and exports from the light emitting area, has improved the light-emitting efficiency of high light efficiency white light chip greatly.
3. Compared with the existing white light LED chip, the white light LED chip has the advantages of more uniform light spots, good heat conductivity, small light emitting angle, low cost and the like, greatly improves the application range and the use convenience of the LED, and particularly relates to the application field requiring small light emitting angle, such as the LED backlight field.
Drawings
FIG. 1 is a schematic diagram of a difference between a central color temperature of a white LED chip and a peripheral color temperature of the chip in the prior art;
FIG. 2, FIG. 4 and FIG. 5 are schematic structural diagrams of a white LED chip according to the present invention;
FIG. 3 and FIG. 6 are schematic diagrams of a white LED chip manufacturing process according to the present invention;
FIG. 7 is a schematic diagram illustrating a difference between a central color temperature of a white LED chip and a peripheral color temperature of the chip according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a difference between a central color temperature and a peripheral color temperature of a white LED chip according to another embodiment of the present invention.
The labels in the figures illustrate:
1-inverted blue light LED coreSheet, 2-transparent silica gel, 3-fluorescent membrane, 4-supporting substrate, 5-high reverse glue, 6-TiO2And (5) film layer.
Detailed Description
Fig. 2 is a schematic structural diagram of an embodiment of a white LED chip provided in the present invention, where the white LED chip includes: the LED chip comprises a metal electrode, an inverted blue LED chip 1, transparent silica gel 2, high-reflection gel 5 and a fluorescent membrane 3; the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip; the fluorescent membrane 3 is arranged on the upper surface of the LED chip, the area of the fluorescent membrane is larger than that of the surface of the LED chip, the fluorescent membrane is symmetrically arranged along the central position of the LED chip, and TiO with the mass ratio of 0.5-5% is doped in the fluorescent membrane 32Powder; the transparent silica gel 2 is arranged around the LED chip in an arc shape on the surface of the fluorescent film 3 facing the fluorescent film 3; the high reverse glue 5 is arranged around the LED chip along the surface of the transparent silica gel 2, and the high reverse glue 5 does not exceed the metal electrode on the surface of the LED chip.
In the LED chip, the thickness of the metal electrode ranges from 10 to 200 mu m (micrometers), and the metal electrode is formed on the surface of the flip blue LED chip 1 by adopting an electroplating or chemical plating method. The transparent silica gel 2 is arranged around the LED chip in an arc shape on the surface of the fluorescent film 3 facing the fluorescent film 3, and the height range and the width range of the transparent silica gel 2 are respectively 10-150 μm and 10-1000 μm along any side of the LED chip. Fluorescence diaphragm 3 locates the upper surface of LED chip, and the area of fluorescence diaphragm 3 is greater than the area on LED chip surface, and fluorescence diaphragm 3 sets up along the central point of LED chip puts for the light reflection that 1 side of flip-chip blue light LED chip sent goes back to become effective light and exports from the light emitting area, thereby improves white light LED chip's luminous efficacy.
In the process of preparing the fluorescent membrane 3, TiO with the mass ratio of 0.5-5% is doped after the fluorescent powder and the transparent silica gel 2 are mixed2And uniformly mixing the powder by using a defoaming machine, uniformly coating the surface of the support film with a preset thickness (such as 50-150 mu m), and baking and curing to obtain the composite material.
In the process of preparing the white light LED chip, after the fluorescent film 3 is prepared, preparing a metal electrode (such as a copper electrode) on the surface of the blue light LED chip 1 in an inverted manner; then, placing the fluorescent membrane 3 on the support substrate 4, and then dotting the transparent silica gel 2 on the surface of the fluorescent membrane 3 according to a preset rule, for example, uniformly dotting the transparent silica gel 2 with the same size on the surface of the fluorescent membrane 3; then, the flip blue LED chip 1 with the metal electrode prepared (without the metal electrode prepared side surface) is placed on the fluorescent film 3 at the position where the transparent silica gel 2 is placed and cured (for example, baked at 150 ° for 2 hours), so that the transparent silica gel 2 on the peripheral surface of the flip blue LED chip 1 is in a concave bowl shape, as shown in fig. 3; then, filling high-reverse glue 5 on the surface of the transparent silica gel 2 between two adjacent flip blue LED chips 1 until the height of the metal electrode is reached and curing; and cutting along the groove between two adjacent flip blue LED chips 1 to obtain a single white LED chip.
Fig. 4 is a schematic structural diagram of an embodiment of a white LED chip provided in the present invention, including: metal electrode, inverted blue LED chip 1, transparent silica gel 2, high reverse glue 5, fluorescent film 3 and TiO2A membrane layer 6; the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip; the fluorescent membrane 3 is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the central position of the LED chip; TiO 22The film layer 6 is arranged on the surface of the fluorescent membrane 3 and has the same size as the fluorescent membrane 3; the transparent silica gel 2 is arranged around the LED chip in an arc shape on the surface of the fluorescent film 3 facing the fluorescent film 3; the high reverse glue 5 is arranged around the LED chip along the surface of the transparent silica gel 2, and the high reverse glue 5 does not exceed the metal electrode on the surface of the LED chip.
In the LED chip, the thickness range of the metal electrode is 10-200 mu m, and the metal electrode is formed on the surface of the flip blue LED chip 1 by adopting an electroplating or chemical plating method. The transparent silica gel 2 is arranged around the LED chip in an arc shape on the surface of the fluorescent film 3 facing the fluorescent film 3, and the height range and the width range of the transparent silica gel 2 are respectively 10-150 μm and 10-1000 μm along any side of the LED chip. Fluorescence diaphragm 3 locates the upper surface of LED chip, and the area of fluorescence diaphragm 3 is greater than the area on LED chip surface, and fluorescence diaphragm 3 sets up along the central point of LED chip puts for the light reflection that 1 side of flip-chip blue light LED chip sent goes back to become effective light and exports from the light emitting area, thereby improves white light LED chip's luminous efficacy.
Unlike the previous embodiment, in this embodiment, TiO2The powder is not doped in the fluorescent film 3, but is mixed with transparent silica gel 2 to prepare TiO2A film layer 6, and mixing the TiO2The film layer 6 is adhered to the surface of the fluorescent film 3. In particular, in the preparation of TiO2In the process of the film layer 6, TiO with the mass ratio of 0.5-5% is doped into the transparent silica gel 22And uniformly mixing the powder, uniformly coating the surface of the support film with a certain thickness of 20-150 mu m, and baking and curing at the temperature of 150 ℃ for 90min to obtain the support film.
In the process of preparing the white light LED chip, after the fluorescent film 3 is prepared, preparing a metal electrode (such as a copper electrode) on the surface of the blue light LED chip 1 in an inverted manner; transparent silica gel 2 with the same size is uniformly spotted on the surface of the fluorescent film 3; then, the flip blue LED chip 1 with the metal electrode prepared (without the metal electrode prepared side surface) is placed on the fluorescent film 3 at the position where the transparent silica gel 2 is placed and cured (for example, baked at 150 ° for 2 hours), so that the transparent silica gel 2 on the peripheral surface of the flip blue LED chip 1 is in a concave bowl shape, as shown in fig. 3; then, filling high-reverse glue 5 on the surface of the transparent silica gel 2 between two adjacent flip blue LED chips 1 until the height of the metal electrode is reached and curing; removing the support substrate 4 and depositing the TiO layer2The film layer 6 is adhered on the surface of the fluorescent film 3 (made of TiO2The film layer is a semi-baking film layer and can be adhered to the surface of the fluorescent film 3 in a high-temperature vacuum pressing mode), and the film layer is baked for 90min at the temperature of 150 ℃ to finish curing. And cutting along the groove between two adjacent flip blue LED chips 1 to obtain a single white LED chip.
Fig. 5 is a schematic structural diagram of a white LED chip provided by the present invention, which includes: metal electrode, inverted blue LED chip 1, transparent silica gel 2, high reverse glue 5, fluorescent film 3 and TiO2A layer 6; wherein the metal electrode is arranged on the electrode in the LED chipA pad surface; the fluorescent membrane 3 is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the central position of the LED chip; TiO 22The film layer 6 is arranged on the surface of the fluorescent membrane 3 and has the same size as the fluorescent membrane 3; TiO 22The film layer is made of TiO2Mixing the powder with transparent silica gel 2 to prepare TiO2The mass ratio of the powder is 0.5-5%; the high reverse glue 5 is arranged around the LED chip, the transparent silica gel 2 and the fluorescent film 3, and the high reverse glue 5 does not exceed the metal electrode on the surface of the LED chip.
In the white light LED chip, the thickness range of the metal electrode is 10-200 μm, and the metal electrode is formed on the surface of the flip blue LED chip 1 by adopting an electroplating or chemical plating method, and in practical application, the metal electrode can be a copper electrode and the like. The transparent silica gel 2 is arranged around the LED chip in a downward slope shape (the angle range of the slope is 5-45 degrees) on the surface of the fluorescent film 3 facing the fluorescent film 3, and along any one side of the LED chip, the height range of the transparent silica gel 2 is 120-150 mu m, and the width range is 120-1000 mu m. The upper surface of LED chip is located to fluorescence diaphragm 3, and the area of fluorescence diaphragm 3 is greater than the area on LED chip surface, and fluorescence diaphragm 3 sets up along the central point of LED chip puts the symmetry for the light reflection that 1 side of flip-chip blue light LED chip sent goes back to become effective light and exports from the light emitting area, thereby has improved white light LED chip's luminous efficiency greatly.
In the preparation of TiO2In the process of the film layer 6, TiO with the mass ratio of 0.5-5% is doped into the transparent silica gel 22And uniformly mixing the powder, uniformly coating the surface of the support film with a certain thickness of 20-150 mu m, and baking at 150 ℃ for 90min to solidify.
In the process of preparing the white light LED chip, after a fluorescent film meeting the requirements is prepared and selected, metal is electroplated on the electrode of the inverted blue light LED chip 1 to obtain a metal electrode (such as copper plating). Transparent silica gel is dotted on the surface of the fluorescent film 3 according to a preset rule, for example, the transparent silica gel 2 with the same size is uniformly dotted on the surface of the fluorescent film 3; thereafter, the flip blue LED chip 1 (surface on the side where no metal electrode is formed) with the metal electrode formed thereon was placed on the fluorescent film sheetThe transparent silica gel is placed at the midpoint and cured (for example, baked at 150 ℃ for 2 hours), so that the transparent silica gel 2 on the peripheral surface of the blue-light LED flip chip is concave and sloped, as shown in FIG. 6; then, cutting the fluorescent film 3 along the cutting path, and expanding the distance between adjacent flip blue LED chips 1; then, filling high-reflection glue 5 between two adjacent flip blue LED chips 1 along the surface of the support substrate and the surface of the transparent silica gel until the height of the high-reflection glue 5 is consistent with that of the metal electrode; removing the support substrate 4 and depositing the TiO layer2The film layer 6 is adhered on the surface of the fluorescent film 3 (made of TiO2The film layer is a semi-baking film layer and can be adhered to the surface of the fluorescent film 3 in a high-temperature vacuum pressing mode), and the film layer is baked for 90min at the temperature of 150 ℃ to finish curing. And finally, cutting along the groove between two adjacent flip blue LED chips 1 to obtain the white LED chip shown in FIG. 5.
In one example, in the white LED chip structure shown in fig. 2, TiO is doped at an impurity amount ratio of 3%2The color temperature of the powder, the color temperature of the center point of the chip obtained by the hand-held illuminometer test, and the color temperature around the chip obtained by the space spectrum radiometer test are shown in fig. 7, and the difference value between the color temperature at the center of the chip and the color temperature around the chip is 350k-400 k.
In another example, in the white LED chip structure shown in fig. 4 and 5, TiO is doped at an impurity amount ratio of 5%2Powder is prepared into film TiO2The LED lamp is attached to the surface of a fluorescent film in a lamp bead, after the lamp bead under the structure is lightened, the color temperature of the central point of the chip is obtained through a handheld illuminometer test, and the color temperature around the chip is obtained through a space spectrum radiometer test, as shown in figure 8, the difference value between the color temperature at the center of the chip and the surrounding color temperature is 350k-400 k.
Claims (9)
1. A white light LED chip is characterized in that the white light LED chip comprises: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection gel and a fluorescent membrane; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film is arranged on the upper surface of the LED chip, the area of the fluorescent film is larger than that of the surface of the LED chip, the fluorescent film is symmetrically arranged along the center of the LED chip, and titanium dioxide powder with the mass ratio of 0.5-5% is doped in the fluorescent film;
the transparent silica gel is arranged around the LED chip in an arc shape on the surface of the fluorescent film piece towards the fluorescent film piece;
the high reverse glue is arranged around the LED chip along the surface of the transparent silica gel, and the high reverse glue does not exceed the metal electrode on the surface of the LED chip.
2. The white LED chip with high luminous efficiency of claim 1, wherein the thickness of the metal electrode ranges from 10 to 200 μm, and the metal electrode is formed on the surface of the LED chip by electroplating or chemical plating.
3. The white LED chip of claim 1 or 2, wherein the transparent silicone has a height ranging from 10 to 150 μm and a width ranging from 10 to 1000 μm along either side of the LED chip.
4. A white light LED chip is characterized in that the white light LED chip comprises: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection glue, a fluorescent membrane and a titanium dioxide membrane layer; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film sheet is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the center of the LED chip;
the titanium dioxide film layer is arranged on the surface of the fluorescent film and has the same size as the fluorescent film; the titanium dioxide film layer is prepared by mixing titanium dioxide powder and transparent silica gel, and the mass ratio of the titanium dioxide powder is 0.5-5%;
the transparent silica gel is arranged around the LED chip in an arc shape on the surface of the fluorescent film piece towards the fluorescent film piece;
the high reverse glue is arranged around the LED chip along the surface of the transparent silica gel, and the high reverse glue does not exceed the metal electrode on the surface of the LED chip.
5. The white LED chip with high luminous efficiency of claim 4, wherein the thickness of the metal electrode ranges from 10 to 200 μm, and the metal electrode is formed on the surface of the LED chip by electroplating or chemical plating.
6. The white LED chip as claimed in claim 4 or 5, wherein the transparent silicone has a height of 10-150 μm and a width of 10-1000 μm along either side of the LED chip.
7. A white light LED chip is characterized in that the white light LED chip comprises: the LED chip comprises a metal electrode, an inverted blue LED chip, transparent silica gel, high-reflection glue, a fluorescent membrane and a titanium dioxide membrane layer; wherein,
the metal electrode is arranged on the surface of an electrode bonding pad in the LED chip;
the fluorescent film sheet is arranged on the upper surface of the LED chip, has an area larger than that of the surface of the LED chip, and is symmetrically arranged along the center of the LED chip;
the titanium dioxide film layer is arranged on the surface of the fluorescent film and has the same size as the fluorescent film; the titanium dioxide film layer is prepared by mixing titanium dioxide powder and transparent silica gel, and the mass ratio of the titanium dioxide powder is 0.5-5%;
the transparent silica gel is arranged around the LED chip in a downward slope on the surface of the fluorescent film, and the angle range of the slope is 5-45 degrees;
the high anti-glue edge sets up all around LED chip, transparent silica gel and fluorescent screen, just the high anti-glue does not surpass the metal electrode on LED chip surface.
8. The white LED chip with high luminous efficiency of claim 4, wherein the thickness of the metal electrode ranges from 10 to 200 μm, and the metal electrode is formed on the surface of the LED chip by electroplating or chemical plating.
9. The white LED chip as claimed in claim 7 or 8, wherein the transparent silicone has a height of 120-150 μm and a width of 120-1000 μm along either side of the LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811629250.6A CN109755231A (en) | 2018-12-29 | 2018-12-29 | White-light LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811629250.6A CN109755231A (en) | 2018-12-29 | 2018-12-29 | White-light LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109755231A true CN109755231A (en) | 2019-05-14 |
Family
ID=66404221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811629250.6A Pending CN109755231A (en) | 2018-12-29 | 2018-12-29 | White-light LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109755231A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970543A (en) * | 2019-12-05 | 2020-04-07 | 江西省晶能半导体有限公司 | Fluorescent film and white LED chip |
| CN111063783A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | Preparation method of fluorescent diaphragm and preparation method of LED lamp bead |
| CN111063784A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | Preparation method of LED lamp beads |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111952292A (en) * | 2020-09-07 | 2020-11-17 | 江西省晶能半导体有限公司 | Light-emitting device and method of making the same |
| WO2025139731A1 (en) * | 2023-12-29 | 2025-07-03 | 佛山市国星光电股份有限公司 | Led device, method for manufacturing led device, and led panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070092636A1 (en) * | 2005-10-24 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
| CN102171844A (en) * | 2008-10-01 | 2011-08-31 | 皇家飞利浦电子股份有限公司 | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
| CN104835898A (en) * | 2015-04-28 | 2015-08-12 | 江苏稳润光电有限公司 | Light-spot white-light LED and production method thereof |
| CN108987556A (en) * | 2017-06-01 | 2018-12-11 | 晶能光电（江西）有限公司 | A kind of white chip |
-
2018
- 2018-12-29 CN CN201811629250.6A patent/CN109755231A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070092636A1 (en) * | 2005-10-24 | 2007-04-26 | 3M Innovative Properties Company | Method of making light emitting device having a molded encapsulant |
| CN102171844A (en) * | 2008-10-01 | 2011-08-31 | 皇家飞利浦电子股份有限公司 | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
| CN104835898A (en) * | 2015-04-28 | 2015-08-12 | 江苏稳润光电有限公司 | Light-spot white-light LED and production method thereof |
| CN108987556A (en) * | 2017-06-01 | 2018-12-11 | 晶能光电（江西）有限公司 | A kind of white chip |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110970543A (en) * | 2019-12-05 | 2020-04-07 | 江西省晶能半导体有限公司 | Fluorescent film and white LED chip |
| CN111063783A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | Preparation method of fluorescent diaphragm and preparation method of LED lamp bead |
| CN111063784A (en) * | 2019-12-30 | 2020-04-24 | 江西省晶能半导体有限公司 | Preparation method of LED lamp beads |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111952292A (en) * | 2020-09-07 | 2020-11-17 | 江西省晶能半导体有限公司 | Light-emitting device and method of making the same |
| WO2025139731A1 (en) * | 2023-12-29 | 2025-07-03 | 佛山市国星光电股份有限公司 | Led device, method for manufacturing led device, and led panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109755231A (en) | White-light LED chip | |
| CN101592291A (en) | LED lamp preparation method that a kind of colour temperature is adjustable and LED lamp | |
| US8993358B2 (en) | Deposition of phosphor on die top by stencil printing | |
| CN108987549A (en) | A kind of white chip preparation method | |
| TW201145598A (en) | A method to produce homogeneous light output by shaping the light conversion material in multichip module | |
| US20110006331A1 (en) | Light-emitting device with a semi-remote phosphor coating | |
| US8193551B2 (en) | LED packaging structure and fabricating method thereof | |
| WO2019093339A1 (en) | Lighting apparatus having mounting substrate for led lighting | |
| CN106252475A (en) | CSP light source and manufacture method thereof | |
| CN105280781A (en) | A flip-chip white light LED device and manufacturing method thereof | |
| CN108987556A (en) | A kind of white chip | |
| CN209471995U (en) | High photosynthetic efficiency White-light LED chip | |
| CN103904073A (en) | LED and OLED integrated illuminating module | |
| TWI463705B (en) | Light emitting device | |
| CN106981482A (en) | A kind of LED dimmed light sources and preparation method thereof | |
| CN202513204U (en) | Packaging structure with white light surface attached with light emitting diode | |
| CN204045626U (en) | Chip-packaging structure on the light-emitting diode panel of many races array | |
| CN207602616U (en) | A kind of Novel LED encapsulating structure | |
| CN109449145A (en) | High-reliability COB packaging structure and high-efficiency packaging method thereof | |
| CN208142212U (en) | White-light LED chip | |
| EP3683849A1 (en) | In-line led lamp bead and packaging process thereof | |
| CN103151434A (en) | Method for improving distribution uniformity of LED (Light Emitting Diode) encapsulated fluorescent powder | |
| CN108987555A (en) | A kind of white chip preparation method | |
| CN204189795U (en) | Arc MCOB LED encapsulation structure | |
| CN211700330U (en) | White light LED chip with all directions of same spectrum and synchronous light attenuation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190514 |
|
| RJ01 | Rejection of invention patent application after publication |