CN109273579A - LED lamp bead preparation method - Google Patents
LED lamp bead preparation method Download PDFInfo
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- CN109273579A CN109273579A CN201811395180.2A CN201811395180A CN109273579A CN 109273579 A CN109273579 A CN 109273579A CN 201811395180 A CN201811395180 A CN 201811395180A CN 109273579 A CN109273579 A CN 109273579A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
The present invention provides a kind of LED lamp bead preparation methods, comprising: prepares fluorescence diaphragm；Fluorescence diaphragm is affixed on the first support film surface resistant to high temperature, and flip LED chips are uniformly sticked in fluorescent film on piece；Suitable transparent silica gel is printed between adjacent LED chip and is solidified, and transparent silica gel is fixed in the surrounding of LED chip in arcuation；Groove between LED chip is cut, and the single LED chip with fluorescence diaphragm is obtained；LED chip with fluorescence diaphragm is fixed on rack surface, and fluorescence diaphragm side is upward；White glue is filled between adjacent LED chip and is solidified；Groove between LED chip is cut, and obtains LED lamp bead in fluorescence diaphragm surface rolling lens or preparation layer of transparent layer of silica gel.Fluorescence diaphragm is directly fixed in flip LED chips surface (LED chip shine side surface) by it, without can be achieved with the solidification of fluorescence diaphragm in LED chip surface point transparent silica gel, the technical problems such as inclined, the diaphragm heatproof in the diaphragm position being likely to occur are effectively prevented, flip LED chips center illumination is substantially increased.
Description
Technical field
The present invention relates to technical field of semiconductors, especially a kind of LED lamp bead preparation method.
Background technique
Currently, upside-down mounting sapphire chip has been widely used in LED encapsulation, typically using gluing process, spraying work
Skill, Ye You decimal enterprise is using patch fluorescent film blade technolgy.But use will putting on chip for patch fluorescence diaphragm blade technolgy saturating
After bright silica gel, then diaphragm sticked, this be likely to cause diaphragm position partially, diaphragm heatproof the problems such as.
Summary of the invention
In order to overcome the above deficiency, the present invention provides a kind of LED lamp bead preparation method, the effective solution prior art
In flip LED chips surface paste fluorescence diaphragm when it is possible that diaphragm deviation, diaphragm heatproof the problems such as.
A kind of LED lamp bead preparation method, comprising:
Fluorescence diaphragm is prepared, the fluorescence diaphragm has the viscosity for being enough to paste LED chip；
Fluorescence diaphragm is affixed on the first support film surface resistant to high temperature, and flip LED chips are uniformly sticked in into fluorescent film
On piece；
Suitable transparent silica gel is printed between adjacent LED chip and is solidified, and the transparent silica gel is fixed in LED core in arcuation
The surrounding of piece；
Groove between LED chip is cut, and the single LED chip with fluorescence diaphragm is obtained；
LED chip with fluorescence diaphragm is fixed on rack surface, and fluorescence diaphragm side is upward；
White glue is filled between adjacent LED chip and is solidified；
Groove between LED chip is cut, and in fluorescence diaphragm surface rolling lens or preparation layer of transparent silicon
Glue-line obtains LED lamp bead.
It is further preferred that preparing fluorescence diaphragm, further comprise:
In the phosphor powder layer of the second support film surface coating preset thickness；
Phosphor powder layer is toasted on a preset condition based to obtain fluorescence diaphragm.
It is further preferred that the preset thickness of phosphor powder layer is 50~150 μm；
The preset condition of phosphor powder layer baking is that 15~30min is toasted under the conditions of 80~90 DEG C of temperature.
It is further preferred that the viscous force of the fluorescence diaphragm is greater than 6g.
It is further preferred that flip LED chips uniformly to be sticked in fluorescent film on piece, further comprise: between LED chip
Distance be 50~400 μm.
It is transparent silica gel, glimmering and in the fluorescence diaphragm it is further preferred that include aluminium oxide in the fluorescence diaphragm
The mass ratio of light powder and aluminium oxide is 1:(1~2): (0.01~0.08).
In LED lamp bead preparation method provided by the invention, the previously prepared fluorescence diaphragm for having viscosity, and by upside-down mounting
LED chip is evenly distributed in fluorescence membrane surface, solidifies after transparent silica gel is clicked and entered between LED chip, with this by fluorescence diaphragm
It is directly fixed in flip LED chips surface (LED chip shine side surface), without in LED chip surface point transparent silica gel energy
The solidification for realizing fluorescence diaphragm effectively prevents the diaphragm position the being likely to occur technical problems such as partially, substantially increases flip LED core
Piece center illumination, while effectively reducing because of the transparent silica gel bring heat between LED chip and fluorescence diaphragm there are one layer thin
Amount；In addition, suitable transparent silica gel is put between adjacent LED chip, the surface cure for making LED chip and fluorescence diaphragm connect
Transparent silica gel is in arcuation, be ensure that between filling LED chip, arc is equally presented in the white glue (high reflectance glue) on transparent silica gel surface
Shape is become effective light after being reflected back with the light that this flip LED chips side issues by white glue and exported from light-emitting surface, thus greatly
The light extraction efficiency for improving white chip greatly, that is, improve the brightness of LED lamp bead, improve the homogeneity of light color out；Finally,
During prepared by fluorescence diaphragm, a certain proportion of aluminium oxide is added, the luminous flux of LED lamp bead is improved, experiment shows to be added to
The luminous flux of the LED product of small amounts aluminium improves 2%~4%.
Detailed description of the invention
Fig. 1 is uniformly to paste flip LED chips in the present invention in fluorescence diaphragm surface texture schematic diagram；
Fig. 2 is to print transparent silica gel structural schematic diagram in the present invention between adjacent LED chip；
Fig. 3 is the structural schematic diagram of the single LED chip with fluorescence diaphragm in the present invention；
Fig. 4 is that the LED chip in the present invention with fluorescence diaphragm is fixed on rack surface structural schematic diagram；
Fig. 5 be the present invention in after fluorescence diaphragm surface rolling lens LED lamp bead structural schematic diagram；
Fig. 6 be the present invention in after fluorescence diaphragm surface rolling transparent silicon glue-line LED lamp bead structural schematic diagram.
1- fluorescence diaphragm, 2-LED chip, 3- transparent silica gel, 4- bracket, 5- white glue, 6- lens, 7- transparent silicon glue-line.
Specific embodiment
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, Detailed description of the invention will be compareed below
A specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing, and obtain other embodiments.
LED lamp bead preparation method provided by the invention, in one embodiment, comprising:
S10 prepares fluorescence diaphragm 1, and the fluorescence diaphragm 1 has the viscosity for being enough to paste LED chip 2；Specifically, according to one
Mass ratio is determined by fluorescent powder and transparent silica gel (transparent silica gel: fluorescent powder: SiO2=1:(1~2): (0.3~1)) mixing after use
Deaeration machine uniformly mixes, and preset thickness (such as 50~150 μm) is uniformly coated in the second support film surface, in 80~90 DEG C of items of temperature
15~30min is toasted under part, after baking, fluorescence diaphragm 1 still has certain viscosity, guarantees that the viscous force of fluorescence diaphragm 1 is greater than
6g, convenient for flip LED chips 2 can be sticked in the next steps.
Fluorescence diaphragm 1 is affixed on the first support membrane resistant to high temperature (such as UV film) surface by S20, and flip LED chips 2 (are had
Body is blue LED flip chip) uniformly stick on fluorescence diaphragm 1, as shown in Figure 1.The distance between flip LED chips 2 can
To be adjusted between 50~400 μm according to the actual situation, and after pasting, guarantee 1 lower surface of fluorescence diaphragm and the second support membrane
Between without air exist.
S30 prints suitable transparent silica gel 3 and is solidified between adjacent LED chip 2, and the transparent silica gel 3 is solid in arcuation
In the surrounding of LED chip 2, as shown in Figure 2；Here the dosage of transparent silica gel 3 is not specifically limited, it can be according to the actual situation
(the distance between such as LED chip) adjustment, as long as ensuring that the thickness of transparent silica gel 3 is less than the thickness of LED chip 2, Bu Huiyi
Out on LED chip 2, and lower concave arc shape is presented in the transparent silica gel 3 of 2 surrounded surface of flip LED chips after solidifying, real one
In example, altitude range is 10~150 μm, and width range is 10~1000 μm.
Groove of the S40 between LED chip 2 is cut, and the single LED chip 2 with fluorescence diaphragm 1 is obtained, such as Fig. 3 institute
Show.
LED chip 2 with fluorescence diaphragm 1 is fixed on 4 surface of bracket by S50, and 1 side of fluorescence diaphragm is upward, such as Fig. 4
Shown, specifically, fixed bracket can be ceramic bottom board, EMC, SMC, PCT, PPA etc..
S60 fills white glue 5 and is solidified between adjacent LED chip 2, and specifically, white glue 5 cannot spill over the upper of fluorescence diaphragm 1
Side, the i.e. thickness of white glue 5 are less than the thickness of LED chip 2+ fluorescence diaphragm 1.
Groove of the S70 between LED chip 2 is cut, and in one layer of 1 surface rolling lens 6 of fluorescence diaphragm or preparation
Transparent silicon glue-line 7 obtains LED lamp bead, is illustrated in figure 5 the LED lamp bead structural representation after 1 surface rolling lens 6 of fluorescence diaphragm
Figure, is illustrated in figure 6 the LED lamp bead structural schematic diagram after 1 surface rolling transparent silicon glue-line 7 of fluorescence diaphragm.Specifically, transparent silica gel
Layer 7 can be prepared by transparent silica gel, can also be prepared by the transparent silica gel mixed with titanium dioxide, thickness is in 30~150 μ
m。
In another embodiment, during step S10 prepares fluorescence diaphragm 1, suitable aluminium oxide is added to mention
The luminous flux of high LED lamp bead, specifically, according to certain mass ratio by transparent silica gel, fluorescent powder and aluminium oxide (1:(1~2): (0.01
~0.08) it is uniformly mixed after) mixing using deaeration machine, uniformly coats preset thickness (such as 50~150 μ in the second support film surface
M), 15~30min is toasted under the conditions of 80~90 DEG C of temperature, still being had certain sticky fluorescence diaphragm 1, (viscous force is big
In 6g), convenient for flip LED chips 2 can be sticked in the next steps.In practical applications, in order to further increase LED lamp bead
Luminous flux, nano aluminium oxide can be used and be added into fluorescence diaphragm.
Embodiment one
1: according to certain mass ratio (transparent silica gel: yellow fluorescent powder: red fluorescence powder: SiO2=1:1.067:0.033:
0.33) fluorescent powder is mixed with transparent silica gel, and is carried out after evenly mixing, uniformly coating one on the first support membrane with deaeration machine
65 μm of thickness degree, 30min is toasted under conditions of 80 DEG C of temperature, obtains fluorescence diaphragm；
2: fluorescence diaphragm is attached on UV resistant to high temperature (ultraviolet) film；
3: the equidistant fixation of blue LED flip chip having a size of 28mil is bonded in fluorescent film on piece, LED chip it
Between 50 μm of distance；Later by transparent silicon glue point between LED chip, it is put into oven and solidifies fluorescence diaphragm and transparent silica gel；
4: according to the center (i.e. at 25 μm of LED chip) between LED chip, being had with blade cut at single
The LED chip of fluorescence diaphragm (having a size of 2.0x1.6mm)；
5: the LED chip of well cutting being translated on blue film, and is expanded, so as to die bond；
6: the LED chip with fluorescence diaphragm is solid on ceramic bottom board；
7: the white glue mixed and after uniform stirring is flowed into height and solidification of the LED chip surrounding to fluorescence diaphragm；
8: the titanium dioxide that 1% (mass ratio) is mixed in transparent silica gel is put into mold, presses a thickness in fluorescence membrane surface
The transparent silicon glue-line that degree is 100 μm；
9: being required according to photoelectric parameter, entire bracket is cut, LED lamp bead is obtained.
Embodiment two
1: according to the fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: SiO of certain mass ratio2=1:1.2:
0.36) it mixes, and after evenly mixing with deaeration machine, 55 μm of a layer thickness is uniformly coated on the first support membrane, at 80 DEG C of temperature
Under conditions of toast 30min, obtain fluorescence diaphragm；
2: fluorescence diaphragm is attached on UV film resistant to high temperature；
3: by the blue LED flip chip having a size of 57mil it is equidistant it is solid between fluorescent film on piece, LED chip away from
From 200 μm；Later by transparent silicon glue point between LED chip, it is put into oven and solidifies fluorescence diaphragm and transparent silica gel；
4: according to the center (i.e. at 100 μm of LED chip) between LED chip, with blade cut at single band
There is the LED chip of fluorescence diaphragm (having a size of 2.5x2.5mm)；
5: the LED chip of well cutting being translated on blue film, and is expanded, so as to good die bond；
6: the LED chip with fluorescence diaphragm is solid in ceramic bottom board；
7: the white glue mixed and after uniform stirring is flowed into height and solidification of the LED chip surrounding to fluorescence diaphragm；
8: being required according to photoelectric parameter, entire bracket is cut, LED lamp bead is obtained.
Embodiment three
1: according to the fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: SiO of certain mass ratio2=1:1.15:
0.345) it mixes, and after evenly mixing with deaeration machine, 55 μm of a layer thickness is uniformly coated on the first support membrane, at 80 DEG C of temperature
Under conditions of toast 30min, obtain fluorescence diaphragm；
2: fluorescence diaphragm is attached on UV film resistant to high temperature；
3: the LED chip having a size of 30mil is equidistant solid in fluorescent film on piece, 150 μm of the distance between LED chip；
Later by transparent silicon glue point between LED chip, it is put into oven and solidifies fluorescence diaphragm and transparent silica gel；
4: according to the center (i.e. at 75 μm of LED chip) between LED chip, being had with blade cut at single
The LED chip of fluorescence diaphragm (having a size of 3.0x3.0mm)；
5: the LED chip of well cutting being translated on blue film, and is expanded, so as to good die bond；
6: the LED chip with fluorescence diaphragm is solid on EMC bracket；
7: the white glue mixed and after uniform stirring is flowed into height and solidification of the LED chip surrounding to fluorescence diaphragm；
8: being required according to photoelectric parameter, entire bracket is cut, LED lamp bead is obtained.
Example IV
1: according to the fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: Al of certain mass ratio2O3=1:1.2:
0.02) it mixes, and after evenly mixing with deaeration machine, 55 μm of a layer thickness is uniformly coated on the first support membrane, at 80 DEG C of temperature
Under conditions of toast 30min, obtain fluorescence diaphragm；
2: fluorescence diaphragm is attached on UV film resistant to high temperature；
3: by the blue LED flip chip having a size of 57mil it is equidistant it is solid between fluorescent film on piece, LED chip away from
From 200 μm；Later by transparent silicon glue point between LED chip, it is put into oven and solidifies fluorescence diaphragm and transparent silica gel；
4: according to the center (i.e. at 100 μm of LED chip) between LED chip, with blade cut at single band
There is the LED chip of fluorescence diaphragm (having a size of 2.5x2.5mm)；
5: the LED chip of well cutting being translated on blue film, and is expanded, so as to good die bond；
6: the LED chip with fluorescence diaphragm is solid in ceramic bottom board；
7: the white glue mixed and after uniform stirring is flowed into height and solidification of the LED chip surrounding to fluorescence diaphragm；
8: being required according to photoelectric parameter, entire bracket is cut, LED lamp bead is obtained.
Through testing, the LED lamp bead that the present embodiment is prepared is compared to the LED lamp bead that embodiment 2 is prepared, luminous flux
Improve 3%.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (6)
1. a kind of LED lamp bead preparation method characterized by comprising
Fluorescence diaphragm is prepared, the fluorescence diaphragm has the viscosity for being enough to paste LED chip；
Fluorescence diaphragm is affixed on the first support film surface resistant to high temperature, and flip LED chips are uniformly sticked in fluorescent film on piece；
Suitable transparent silica gel is printed between adjacent LED chip and is solidified, and the transparent silica gel is fixed in LED chip in arcuation
Surrounding；
Groove between LED chip is cut, and the single LED chip with fluorescence diaphragm is obtained；
LED chip with fluorescence diaphragm is fixed on rack surface, and fluorescence diaphragm side is upward；
White glue is filled between adjacent LED chip and is solidified；
Groove between LED chip is cut, and in fluorescence diaphragm surface rolling lens or preparation layer of transparent layer of silica gel
Obtain LED lamp bead.
2. LED lamp bead preparation method as described in claim 1, which is characterized in that prepare fluorescence diaphragm, further comprise:
In the phosphor powder layer of the second support film surface coating preset thickness；
Phosphor powder layer is toasted on a preset condition based to obtain fluorescence diaphragm.
3. LED lamp bead preparation method as claimed in claim 2, which is characterized in that
The preset thickness of phosphor powder layer is 50~150 μm；
The preset condition of phosphor powder layer baking is that 15~30min is toasted under the conditions of 80~90 DEG C of temperature.
4. LED lamp bead preparation method as claimed in any one of claims 1-3, which is characterized in that wrapped in the fluorescence diaphragm
Aluminium oxide is included, and in the fluorescence diaphragm, the mass ratio of transparent silica gel, fluorescent powder and aluminium oxide is 1:(1~2): (0.01~
0.08)。
5. LED lamp bead preparation method as claimed in any one of claims 1-3, which is characterized in that the fluorescence diaphragm glues
Power is greater than 6g.
6. LED lamp bead preparation method as described in claim 1, which is characterized in that flip LED chips are uniformly sticked in fluorescence
On diaphragm, further comprise: the distance between LED chip is 50~400 μm.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811395180.2A CN109273579B (en) | 2018-11-22 | 2018-11-22 | LED lamp bead preparation method |
| PCT/CN2019/119903 WO2020103898A1 (en) | 2018-11-22 | 2019-11-21 | Led light bulb manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811395180.2A CN109273579B (en) | 2018-11-22 | 2018-11-22 | LED lamp bead preparation method |
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| CN109273579A true CN109273579A (en) | 2019-01-25 |
| CN109273579B CN109273579B (en) | 2022-04-22 |
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| CN201811395180.2A Active CN109273579B (en) | 2018-11-22 | 2018-11-22 | LED lamp bead preparation method |
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| WO (1) | WO2020103898A1 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110131623A (en) * | 2019-05-23 | 2019-08-16 | 安徽芯瑞达科技股份有限公司 | This back light source structure drops in a kind of straight-down negative SMC |
| CN110459663A (en) * | 2019-06-28 | 2019-11-15 | 广东晶科电子股份有限公司 | A kind of LED component and preparation method thereof |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| WO2020103898A1 (en) * | 2018-11-22 | 2020-05-28 | 江西省晶能半导体有限公司 | Led light bulb manufacturing method |
| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN112951970A (en) * | 2020-12-31 | 2021-06-11 | 广东晶科电子股份有限公司 | Light-emitting device manufacturing method and light-emitting device |
| CN114220896A (en) * | 2021-11-09 | 2022-03-22 | 深圳市佑明光电有限公司 | Flip chip packaging process and flip chip packaging structure |
| CN115911224B (en) * | 2023-01-10 | 2023-08-01 | 深圳市平深光电子科技有限公司 | Production process of light-emitting device for sighting device, light-emitting device and sighting device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN106549092A (en) * | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN107275460A (en) * | 2017-07-12 | 2017-10-20 | 惠州市聚飞光电有限公司 | A kind of luminous LED component of one side and method for packing |
| CN107482096A (en) * | 2017-08-11 | 2017-12-15 | 厦门市三安光电科技有限公司 | A kind of light-emitting device and its manufacture method |
| CN107968142A (en) * | 2016-10-19 | 2018-04-27 | 新世纪光电股份有限公司 | Light-emitting device and its manufacture method |
| CN108365075A (en) * | 2017-01-26 | 2018-08-03 | 行家光电股份有限公司 | Wafer-class encapsulation light-emitting device with inclined-plane chip catoptric arrangement and its manufacturing method |
| WO2018158091A1 (en) * | 2017-02-28 | 2018-09-07 | Osram Opto Semiconductors Gmbh | Method for producing light-emitting diodes, and light-emitting diode |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104167482B (en) * | 2014-07-29 | 2018-01-23 | 广东晶科电子股份有限公司 | A kind of White-light LED chip and preparation method thereof |
| CN105047793B (en) * | 2015-08-20 | 2018-07-06 | 厦门市三安光电科技有限公司 | The production method of light-emitting diode encapsulation structure |
| CN106252475A (en) * | 2016-09-21 | 2016-12-21 | 深圳市兆驰节能照明股份有限公司 | CSP light source and manufacture method thereof |
| CN107507899B (en) * | 2017-08-16 | 2019-11-15 | 深圳市兆驰节能照明股份有限公司 | Single side shines CSP light source manufacturing method |
| CN109273579B (en) * | 2018-11-22 | 2022-04-22 | 江西省晶能半导体有限公司 | LED lamp bead preparation method |
| CN109830474B (en) * | 2018-12-17 | 2023-07-11 | 江西省晶能半导体有限公司 | Preparation method of colored light LED chip and preparation method of colored light LED lamp beads |
-
2018
- 2018-11-22 CN CN201811395180.2A patent/CN109273579B/en active Active
-
2019
- 2019-11-21 WO PCT/CN2019/119903 patent/WO2020103898A1/en active Application Filing
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129231A (en) * | 2015-05-05 | 2016-11-16 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN106549092A (en) * | 2015-09-18 | 2017-03-29 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
| CN107968142A (en) * | 2016-10-19 | 2018-04-27 | 新世纪光电股份有限公司 | Light-emitting device and its manufacture method |
| CN108365075A (en) * | 2017-01-26 | 2018-08-03 | 行家光电股份有限公司 | Wafer-class encapsulation light-emitting device with inclined-plane chip catoptric arrangement and its manufacturing method |
| WO2018158091A1 (en) * | 2017-02-28 | 2018-09-07 | Osram Opto Semiconductors Gmbh | Method for producing light-emitting diodes, and light-emitting diode |
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