CN109273579B - LED lamp bead preparation method - Google Patents
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- CN109273579B CN109273579B CN201811395180.2A CN201811395180A CN109273579B CN 109273579 B CN109273579 B CN 109273579B CN 201811395180 A CN201811395180 A CN 201811395180A CN 109273579 B CN109273579 B CN 109273579B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The invention provides a preparation method of an LED lamp bead, which comprises the following steps: preparing a fluorescent membrane; the method comprises the following steps of (1) attaching a fluorescent film piece to the surface of a high-temperature-resistant first support film, and uniformly attaching a flip LED chip to the fluorescent film piece; printing a proper amount of transparent silica gel between adjacent LED chips and curing, wherein the transparent silica gel is fixed around the LED chips in an arc shape; cutting along grooves among the LED chips to obtain single LED chips with the fluorescent diaphragms; fixing the LED chip with the fluorescent diaphragm on the surface of the bracket, wherein one side of the fluorescent diaphragm faces upwards; filling white glue between adjacent LED chips and curing; and cutting along grooves among the LED chips, and pressing a lens on the surface of the fluorescent film or preparing a transparent silica gel layer to obtain the LED lamp bead. It directly solidifies the fluorescent film piece on flip-chip LED chip surface (the luminous side surface of LED chip), need not to realize the solidification of fluorescent film piece at LED chip surface point transparent silica gel, has effectively avoided technical problem such as diaphragm position deviation, diaphragm temperature resistant that probably appears, has improved flip-chip LED chip central illuminance greatly.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of an LED lamp bead.
Background
At present, the inverted sapphire chip is widely applied to LED packaging, generally adopting a dispensing process and a spraying process, and also adopting a fluorescent film pasting process in decimal enterprises. However, in the process of sticking the fluorescent film, transparent silica gel is dotted on the chip and then the film is stuck, which may cause the problems of film deviation, film temperature resistance and the like.
Disclosure of Invention
In order to overcome the defects, the invention provides the preparation method of the LED lamp bead, which effectively solves the problems of membrane deviation, membrane temperature resistance and the like which possibly occur when a fluorescent membrane is adhered to the surface of an inverted LED chip in the prior art.
A preparation method of an LED lamp bead comprises the following steps:
preparing a fluorescent film, wherein the fluorescent film has enough viscosity for adhering the LED chip;
the method comprises the following steps of (1) attaching a fluorescent film piece to the surface of a high-temperature-resistant first support film, and uniformly attaching a flip LED chip to the fluorescent film piece;
printing a proper amount of transparent silica gel between adjacent LED chips and curing, wherein the transparent silica gel is fixed around the LED chips in an arc shape;
cutting along grooves among the LED chips to obtain single LED chips with the fluorescent diaphragms;
fixing the LED chip with the fluorescent diaphragm on the surface of the bracket, wherein one side of the fluorescent diaphragm faces upwards;
filling white glue between adjacent LED chips and curing;
and cutting along grooves among the LED chips, and pressing a lens on the surface of the fluorescent film or preparing a transparent silica gel layer to obtain the LED lamp bead.
Further preferably, preparing the fluorescent membrane further comprises:
coating a fluorescent powder layer with a preset thickness on the surface of the second support film;
and baking the fluorescent powder layer under a preset condition to obtain the fluorescent membrane.
Further preferably, the preset thickness of the fluorescent powder layer is 50-150 μm;
the preset condition for baking the fluorescent powder layer is baking for 15-30 min at the temperature of 80-90 ℃.
Further preferably, the adhesion force of the fluorescent membrane is more than 6 g.
Further preferably, the flip LED chip is uniformly adhered to the fluorescent film, and further includes: the distance between the LED chips is 50-400 mu m.
Further preferably, the fluorescent membrane comprises aluminum oxide, and the mass ratio of the transparent silica gel to the fluorescent powder to the aluminum oxide in the fluorescent membrane is 1 (1-2) to 0.01-0.08.
According to the LED lamp bead preparation method provided by the invention, the fluorescent film sheet with viscosity is prepared in advance, the flip LED chips are uniformly arranged on the surface of the fluorescent film sheet, and the transparent silica gel is dripped between the LED chips for curing, so that the fluorescent film sheet is directly cured on the surface of the flip LED chip (the light-emitting side surface of the LED chip), the fluorescent film sheet can be cured without being dripped on the surface of the LED chip, the technical problems of possible deviation of the film sheet and the like are effectively avoided, the central illumination of the flip LED chip is greatly improved, and the heat caused by the thin transparent silica gel layer between the LED chip and the fluorescent film sheet is effectively reduced; in addition, a proper amount of transparent silica gel is dotted between adjacent LED chips, so that the surface-cured transparent silica gel of the LED chips connected with the fluorescent membrane is arc-shaped, white glue (high-reflectivity glue) filled between the LED chips and on the surface of the transparent silica gel is also arc-shaped, and light emitted from the side surface of the LED chips which are inverted is reflected back by the white glue to be effective light which is output from a light-emitting surface, so that the light-emitting efficiency of the white light chip is greatly improved, namely the brightness of LED lamp beads is improved, and the uniformity of light-emitting color is improved; and finally, in the process of preparing the fluorescent film, a certain proportion of alumina is added to improve the luminous flux of the LED lamp bead, and experiments show that the luminous flux of the LED product added with a small amount of alumina is improved by 2-4%.
Drawings
FIG. 1 is a schematic view of a structure of uniformly adhering a flip LED chip to the surface of a fluorescent film according to the present invention;
FIG. 2 is a schematic view of a structure of printing transparent silica gel between adjacent LED chips according to the present invention;
FIG. 3 is a schematic structural diagram of a single LED chip with a fluorescent film according to the present invention;
FIG. 4 is a schematic view of the structure of the present invention in which an LED chip with a fluorescent film is fixed on the surface of a support;
FIG. 5 is a schematic view of a structure of an LED lamp bead after a lens is pressed on the surface of a fluorescent film sheet in the invention;
FIG. 6 is a schematic diagram of a structure of an LED lamp bead after a transparent silica gel layer is pressed on the surface of a fluorescent film sheet in the invention.
1-fluorescent membrane, 2-LED chip, 3-transparent silica gel, 4-bracket, 5-white glue, 6-lens and 7-transparent silica gel layer.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
The invention provides a preparation method of an LED lamp bead, which comprises the following steps:
s10, preparing a fluorescent membrane 1, wherein the fluorescent membrane 1 has viscosity enough to adhere the LED chip 2; specifically, fluorescent powder and transparent silica gel (transparent silica gel: fluorescent powder: SiO) are mixed according to a certain mass ratio2(0.3-1)) mixing, uniformly mixing by using a defoaming machine, uniformly coating the surface of the second support film with a preset thickness (such as 50-150 mu m), baking for 15-30 min at the temperature of 80-90 ℃, wherein after baking, the fluorescent film 1 still has certain viscosity, the viscosity of the fluorescent film 1 is ensured to be more than 6g, and the flip LED chip 2 can be conveniently adhered in the subsequent steps.
S20, attaching the fluorescent film 1 to the surface of a first high temperature resistant supporting film (e.g., a UV film), and uniformly attaching the flip-chip LED chip 2 (specifically, a flip-chip blue LED chip) to the fluorescent film 1, as shown in fig. 1. The distance between the flip LED chips 2 can be adjusted within 50-400 mu m according to actual conditions, and after the flip LED chips are adhered, no air exists between the lower surface of the fluorescent membrane 1 and the second support membrane.
S30 printing a proper amount of transparent silicone 3 between adjacent LED chips 2 and curing, the transparent silicone 3 being arc-shaped and fixed around the LED chips 2 as shown in fig. 2; the amount of the transparent silicone 3 is not specifically limited, and may be adjusted according to actual conditions (such as the distance between the LED chips, etc.), as long as it is ensured that the thickness of the transparent silicone 3 is smaller than the thickness of the LED chip 2, and the transparent silicone 3 does not overflow onto the LED chip 2, and the cured transparent silicone 3 on the peripheral surface of the flip LED chip 2 is in a concave arc shape, in one example, the height range is 10 to 150 μm, and the width range is 10 to 1000 μm.
S40, cutting along the grooves between the LED chips 2 to obtain a single LED chip 2 with a fluorescent film 1, as shown in fig. 3.
S50, the LED chip 2 with the fluorescent film 1 is fixed on the surface of the bracket 4 with the fluorescent film 1 side facing upward, as shown in fig. 4, specifically, the fixing bracket may be a ceramic base plate, EMC, SMC, PCT, PPA, or the like.
S60 filling the white glue 5 between the adjacent LED chips 2 and curing, specifically, the white glue 5 cannot overflow to the upper side of the fluorescent film 1, that is, the thickness of the white glue 5 is smaller than the thickness of the LED chip 2+ the fluorescent film 1.
S70, cutting along the grooves between the LED chips 2, and pressing the lens 6 on the surface of the fluorescent film 1 or preparing a transparent silicone layer 7 to obtain the LED lamp bead, as shown in fig. 5, the structure of the LED lamp bead is shown after pressing the lens 6 on the surface of the fluorescent film 1, and as shown in fig. 6, the structure of the LED lamp bead is shown after pressing the transparent silicone layer 7 on the surface of the fluorescent film 1. Specifically, the transparent silica gel layer 7 can be prepared from transparent silica gel or transparent silica gel doped with titanium dioxide, and the thickness is 30-150 μm.
In another embodiment, in the process of preparing the fluorescent membrane 1 in the step S10, a proper amount of aluminum oxide is added to improve the luminous flux of LED lamp beads, specifically, transparent silica gel, fluorescent powder and aluminum oxide (1-2): (0.01-0.08)) are mixed according to a certain mass ratio, then uniformly mixed by using a defoaming machine, uniformly coated with a predetermined thickness (such as 50-150 μm) on the surface of the second support membrane, and baked at a temperature of 80-90 ℃ for 15-30 min to obtain the fluorescent membrane 1 (with a viscosity greater than 6g) still having a certain viscosity, so that the inverted LED chip 2 can be adhered in the subsequent steps. In practical application, in order to further improve the luminous flux of the LED lamp bead, nano aluminum oxide can be added into the fluorescent film.
Example one
1: according to a certain mass ratio (transparent silica gel: yellow fluorescent powder: red fluorescent powder: SiO)21:1.067:0.033:0.33), uniformly mixing the fluorescent powder and the transparent silica gel by using a defoaming machine, uniformly coating a layer with the thickness of 65 mu m on the first supporting film, and baking for 30min at the temperature of 80 ℃ to obtain a fluorescent membrane;
2: sticking the fluorescent film piece on a high-temperature resistant UV (ultraviolet) film;
3: fixedly bonding flip blue LED chips with the size of 28mil on the fluorescent film at equal intervals, wherein the distance between the LED chips is 50 micrometers; then, the transparent silica gel is dotted between the LED chips, and the LED chips are placed into an oven to cure the fluorescent membrane and the transparent silica gel;
4: cutting the LED chips into single LED chips (with the size of 2.0x1.6mm) with fluorescent diaphragms by a blade according to the central positions among the LED chips (namely, the positions 25 mu m away from the LED chips);
5: turning the cut LED chip onto a blue film, and expanding the LED chip so as to fix the chip;
6: fixing the LED chip with the fluorescent diaphragm on the ceramic bottom plate;
7: the mixed and evenly stirred white glue flows into the periphery of the LED chip to the height of the fluorescent membrane and is solidified;
8: adding 1% (mass ratio) of titanium dioxide into transparent silica gel, placing the mixture into a mold, and pressing a transparent silica gel layer with the thickness of 100 mu m on the surface of the fluorescent film;
9: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
Example two
1: fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: SiO) according to a certain mass ratio21:1.2:0.36), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 55 mu m on the first support film, and baking for 30min at the temperature of 80 ℃ to obtain a fluorescent film;
2: sticking the fluorescent film piece on the high-temperature resistant and high-temperature resistant UV film;
3: fixing flip blue LED chips with the size of 57mil on the fluorescent film at equal intervals, wherein the distance between the LED chips is 200 mu m; then, the transparent silica gel is dotted between the LED chips, and the LED chips are placed into an oven to cure the fluorescent membrane and the transparent silica gel;
4: cutting the LED chips into single LED chips (with the size of 2.5x2.5mm) with fluorescent diaphragms by a blade according to the central positions among the LED chips (namely, the positions 100 mu m away from the LED chips);
5: turning the cut LED chip onto a blue film, and expanding the LED chip so as to facilitate die bonding;
6: fixing the LED chip with the fluorescent diaphragm on a ceramic bottom plate;
7: the mixed and evenly stirred white glue flows into the periphery of the LED chip to the height of the fluorescent membrane and is solidified;
8: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
EXAMPLE III
1: fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: SiO) according to a certain mass ratio21:1.15:0.345), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 55 mu m on the first support film, and baking for 30min at the temperature of 80 ℃ to obtain a fluorescent film;
2: sticking the fluorescent film piece on the high-temperature resistant and high-temperature resistant UV film;
3: fixing the LED chips with the size of 30mil on the fluorescent film at equal intervals, wherein the distance between the LED chips is 150 mu m; then, the transparent silica gel is dotted between the LED chips, and the LED chips are placed into an oven to cure the fluorescent membrane and the transparent silica gel;
4: cutting the LED chips into single LED chips (with the size of 3.0x3.0mm) with fluorescent films by a blade according to the central positions among the LED chips (namely, the positions 75 mu m away from the LED chips);
5: turning the cut LED chip onto a blue film, and expanding the LED chip so as to facilitate die bonding;
6: fixing the LED chip with the fluorescent membrane on an EMC bracket;
7: the mixed and evenly stirred white glue flows into the periphery of the LED chip to the height of the fluorescent membrane and is solidified;
8: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
Example four
1: fluorescent powder and transparent silica gel (transparent silica gel: yellow fluorescent powder: Al) according to a certain mass ratio2O31:1.2:0.02), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 55 mu m on the first support film, and baking for 30min at the temperature of 80 ℃ to obtain a fluorescent film;
2: sticking the fluorescent film piece on the high-temperature resistant and high-temperature resistant UV film;
3: fixing flip blue LED chips with the size of 57mil on the fluorescent film at equal intervals, wherein the distance between the LED chips is 200 mu m; then, the transparent silica gel is dotted between the LED chips, and the LED chips are placed into an oven to cure the fluorescent membrane and the transparent silica gel;
4: cutting the LED chips into single LED chips (with the size of 2.5x2.5mm) with fluorescent diaphragms by a blade according to the central positions among the LED chips (namely, the positions 100 mu m away from the LED chips);
5: turning the cut LED chip onto a blue film, and expanding the LED chip so as to facilitate die bonding;
6: fixing the LED chip with the fluorescent diaphragm on a ceramic bottom plate;
7: the mixed and evenly stirred white glue flows into the periphery of the LED chip to the height of the fluorescent membrane and is solidified;
8: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
Through experiments, compared with the LED lamp bead prepared in the embodiment 2, the luminous flux of the LED lamp bead prepared in the embodiment is improved by 3%.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. The preparation method of the LED lamp bead is characterized by comprising the following steps:
preparing a fluorescent film, wherein the fluorescent film has enough viscosity for adhering the LED chip;
the method comprises the following steps of (1) attaching a fluorescent film piece to the surface of a high-temperature-resistant first support film, and uniformly attaching a flip LED chip to the fluorescent film piece;
printing a proper amount of transparent silica gel between adjacent LED chips and curing, wherein the transparent silica gel is fixed around the LED chips in an arc shape;
cutting along grooves among the LED chips to obtain single LED chips with the fluorescent diaphragms;
fixing the LED chip with the fluorescent diaphragm on the surface of the bracket, wherein one side of the fluorescent diaphragm faces upwards;
filling white glue between adjacent LED chips and curing;
cutting along grooves among the LED chips, and pressing a lens on the surface of the fluorescent film or preparing a transparent silica gel layer to obtain an LED lamp bead;
preparing a fluorescent membrane, further comprising:
coating a fluorescent powder layer with a preset thickness on the surface of the second support film;
baking the fluorescent powder layer under a preset condition to obtain a fluorescent membrane; after baking, the fluorescent film sheet has certain viscosity;
the preset condition for baking the fluorescent powder layer is baking for 15-30 min at the temperature of 80-90 ℃.
2. The method for preparing LED lamp beads according to claim 1,
the predetermined thickness of the phosphor layer is 50 to 150 μm.
3. The method for preparing the LED lamp bead according to claim 1 or 2, wherein the fluorescent membrane comprises aluminum oxide, and the mass ratio of the transparent silica gel, the fluorescent powder and the aluminum oxide in the fluorescent membrane is 1 (1-2) to (0.01-0.08).
4. The method for preparing the LED lamp bead according to claim 1 or 2, wherein the adhesive force of the fluorescent film is more than 6 g.
5. The method for preparing the LED lamp bead of claim 1, wherein the flip LED chip is uniformly adhered to the fluorescent film, further comprising: the distance between the LED chips is 50-400 mu m.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811395180.2A CN109273579B (en) | 2018-11-22 | 2018-11-22 | LED lamp bead preparation method |
| PCT/CN2019/119903 WO2020103898A1 (en) | 2018-11-22 | 2019-11-21 | Led light bulb manufacturing method |
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| CN201811395180.2A CN109273579B (en) | 2018-11-22 | 2018-11-22 | LED lamp bead preparation method |
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| CN109273579B true CN109273579B (en) | 2022-04-22 |
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| CN109273579B (en) * | 2018-11-22 | 2022-04-22 | 江西省晶能半导体有限公司 | LED lamp bead preparation method |
| CN110131623A (en) * | 2019-05-23 | 2019-08-16 | 安徽芯瑞达科技股份有限公司 | This back light source structure drops in a kind of straight-down negative SMC |
| CN110459663A (en) * | 2019-06-28 | 2019-11-15 | 广东晶科电子股份有限公司 | A kind of LED component and preparation method thereof |
| CN111092142A (en) * | 2019-12-30 | 2020-05-01 | 江西省晶能半导体有限公司 | White light LED chip and preparation method thereof |
| CN111785710B (en) * | 2020-07-28 | 2023-06-09 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN112951970B (en) * | 2020-12-31 | 2023-12-08 | 广东晶科电子股份有限公司 | Manufacturing method of light-emitting device and light-emitting device |
| CN114220896B (en) * | 2021-11-09 | 2022-09-23 | 深圳市佑明光电有限公司 | Flip chip packaging process and flip chip packaging structure |
| CN115911224B (en) * | 2023-01-10 | 2023-08-01 | 深圳市平深光电子科技有限公司 | Production process of light-emitting device for sighting device, light-emitting device and sighting device |
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| CN107482096A (en) * | 2017-08-11 | 2017-12-15 | 厦门市三安光电科技有限公司 | A kind of light-emitting device and its manufacture method |
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| WO2020103898A1 (en) | 2020-05-28 |
| CN109273579A (en) | 2019-01-25 |
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