CN111106228A - LED lamp bead preparation method - Google Patents
LED lamp bead preparation method Download PDFInfo
- Publication number
- CN111106228A CN111106228A CN201811254410.3A CN201811254410A CN111106228A CN 111106228 A CN111106228 A CN 111106228A CN 201811254410 A CN201811254410 A CN 201811254410A CN 111106228 A CN111106228 A CN 111106228A
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- Prior art keywords
- led
- film
- led chips
- fluorescent film
- fluorescent
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- 239000011324 bead Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000741 silica gel Substances 0.000 claims abstract description 43
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000003292 glue Substances 0.000 claims abstract description 23
- 238000005520 cutting process Methods 0.000 claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a preparation method of an LED lamp bead, which comprises the following steps: coating a fluorescent powder layer with a preset thickness on the surface of the support film and baking to obtain a fluorescent film; attaching the fluorescent film to the surface of the UV film; uniformly arranging the flip LED chips on the surface of the fluorescent film; dropping silica gel between the LED chips and curing; cutting the silica gel among the LED chips to obtain single LED chips with the fluorescent films; fixing the LED chip with the fluorescent film on the surface of the bracket; the white glue flows between the LED chips and is solidified; and cutting the white glue between the support and the LED chip according to the requirement, and pressing a lens on the surface of the fluorescent film to obtain the LED lamp bead.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a preparation method of an LED lamp bead.
Background
At present, the inverted sapphire chip is widely applied to LED packaging, generally adopting a dispensing process and a spraying process, and adopting a fluorescent film pasting process by decimal enterprises. However, in the process of attaching the fluorescent film, the transparent silica gel is dotted on the chip and then the film is attached, which may cause the problems of the film deviation and the like.
Disclosure of Invention
In order to overcome the defects, the invention provides the preparation method of the LED lamp bead, which effectively solves the problems that the diaphragm is deviated and the like possibly occurring when a fluorescent film is pasted on the surface of an inverted LED chip in the prior art.
A preparation method of an LED lamp bead comprises the following steps:
coating a fluorescent powder layer with a preset thickness on the surface of the support film and baking to obtain a fluorescent film;
attaching the fluorescent film to the surface of the UV film;
uniformly arranging the flip LED chips on the surface of the fluorescent film;
dropping silica gel between the LED chips and curing;
cutting the silica gel among the LED chips to obtain single LED chips with the fluorescent films;
fixing the LED chip with the fluorescent film on the surface of the bracket;
the white glue flows between the LED chips and is solidified;
and cutting the white glue between the support and the LED chip according to the requirement, and pressing a lens on the surface of the fluorescent film to obtain the LED lamp bead.
Further preferably, the method for manufacturing the fluorescent film includes coating a fluorescent powder layer with a predetermined thickness on the surface of the support film and baking the coated layer to obtain the fluorescent film, and further includes: the fluorescent film has adhesiveness.
Further preferably, the flip LED chips are uniformly arranged on the surface of the fluorescent film, and further comprising:
the distance between the LED chips is 50-400 mu m.
Further preferably, after the step of flowing the white glue between the LED chips and curing, the method further comprises: preparing a silica gel layer on the surface of the fluorescent film;
the white glue between the support and the LED chip is cut according to the requirement in the step, and the LED lamp bead is obtained specifically as follows: and cutting the white glue and the silica gel layer between the support and the LED chip according to requirements, and pressing a lens on the surface of the silica gel layer to obtain the LED lamp bead.
According to the LED lamp bead preparation method provided by the invention, the fluorescent film with viscosity is prepared in advance, the flip LED chips are uniformly arranged on the surface of the fluorescent film, and the silica gel is dripped between the LED chips for curing, so that the fluorescent film is cured on the surface of the flip LED chip (the light-emitting side surface of the LED chip), the curing of the fluorescent film can be realized without the silica gel being dripped on the surface of the LED chip, the technical problems of possible membrane deviation and the like are effectively solved, the central illumination of the flip LED chip is improved, the brightness of the LED lamp bead is improved, and the uniformity of the light emitting color is improved.
Drawings
FIG. 1 is a schematic flow chart of an embodiment of a method for preparing an LED lamp bead according to the present invention;
FIG. 2 is a schematic structural view of an LED lamp bead prepared in one embodiment of the present invention;
FIG. 3 is a schematic flow chart of another embodiment of a method for preparing an LED lamp bead according to the present invention;
fig. 4 is a schematic structural view of an LED lamp bead prepared in another embodiment of the present invention.
1-support, 2-flip LED chip, 3-silica gel, 4-white glue, 5-fluorescent film, 6-lens and 7-silica gel layer.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will be made with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
As shown in fig. 1, which is a schematic flow chart of an embodiment of a method for preparing an LED lamp bead provided by the present invention, it can be seen from the figure that the preparation method includes:
s1, coating a fluorescent powder layer with a preset thickness on the surface of the support film and baking to obtain a fluorescent film 5;
s2, attaching the fluorescent film 5 to the surface of the UV film;
s3, uniformly arranging the flip LED chips 2 on the surface of the fluorescent film 5;
s4, dropping the silica gel 3 between the LED chips 2 and curing;
s5, cutting the silica gel 3 among the LED chips 2 to obtain single LED chip 2 with the fluorescent film 5;
s6, fixing the LED chip 2 with the fluorescent film 5 on the surface of the bracket 1;
s7, white glue 4 flows between the LED chips 2 and is solidified;
s8, cutting the white glue 4 between the support 1 and the LED chip 2 according to requirements, and pressing the lens 6 on the surface of the fluorescent film 5 to obtain the LED lamp bead, as shown in FIG. 2.
The embodiment is obtained by modifying the above embodiment, and in the embodiment, as shown in fig. 2, the method for preparing the LED lamp bead includes:
s1, coating a fluorescent powder layer with a preset thickness on the surface of the support film and baking to obtain a fluorescent film 5;
s2, attaching the fluorescent film 5 to the surface of the UV film;
s3, uniformly arranging the flip LED chips 2 on the surface of the fluorescent film 5;
s4, dropping the silica gel 3 between the LED chips 2 and curing;
s5, cutting the silica gel 3 among the LED chips 2 to obtain single LED chip 2 with the fluorescent film 5;
s6, fixing the LED chip 2 with the fluorescent film 5 on the surface of the bracket 1;
s7, white glue 4 flows between the LED chips 2 and is solidified;
s9 preparation of silica gel layer 7 on surface of fluorescent film 5
S8, cutting the white glue 4 and the silica gel layer 7 between the support 1 and the LED chip 2 as required, and pressing the lens 6 on the surface of the silica gel layer 7 to obtain the LED lamp bead, as shown in fig. 4 (the lens is not shown).
Specifically, in step S1 of the above embodiment, the phosphor and the silica gel are mixed according to a certain mass ratio (silica gel: phosphor powder is 1: 1-2), then the mixture is uniformly mixed by using a defoaming machine, the surface of the support film is uniformly coated with a predetermined thickness (for example, 50-150 μm), the support film is baked at 80-90 ℃ for 15-30 min, and after the baking, the phosphor film 5 still has a certain viscosity, so that the flip-chip LED chip 2 can be stuck in the subsequent step. In step S2, the fluorescent film 5 is attached to the high temperature resistant UV film without air existing between the lower surface of the fluorescent film 5 and the UV film; then, in step S3, the flip-chip LED chips 2 are uniformly arranged on the surface of the fluorescent film 5, and the distance between the LED chips 2 is 50 to 400 μm. In step S4, the thickness of the silicone rubber 3 between the LED chips 2 is smaller than the thickness of the LED chips 2, so as to ensure that the silicone rubber 3 does not overflow to the LED chips 2, and then the LED chips are placed into an oven to cure the fluorescent film 5 and the white glue 4. In step S6, the fixing bracket 1 may be a ceramic chassis, EMC, SMC, PCT, PPA, or the like. In step S7, the white glue 4 cannot overflow above the phosphor film 5, i.e. the thickness of the white glue 4 is smaller than the thickness of the LED chip 2+ the phosphor film 5. In step S9, the silica gel layer 7 pressed on the fluorescent film 5 may be made of silica gel 3 or silica gel 3 doped with titanium dioxide, and the thickness is 30 to 150 μm.
Example one
1: mixing the fluorescent powder and the silica gel according to a certain mass ratio (the silica gel: the yellow fluorescent powder: the red fluorescent powder is 1:1.067:0.033), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 65 mu m on a support film, and baking for 30min at the temperature of 80 ℃;
2: attaching the fluorescent film on the high-temperature resistant UV film;
3: fixedly bonding flip LED chips (with the size of 28mil) on the fluorescent film at equal intervals, wherein the distance between the LED chips is 50 micrometers; then, the silica gel is dotted in the space between the LED chips, and the LED chips are placed into an oven to cure the fluorescent film and the silica gel;
4: cutting the LED chips into single LED chips with the fluorescent films by a blade according to the central position among the LED chips (namely, a position 25 mu m away from the LED chips);
5: and turning the cut LED chip onto the blue film and expanding the LED chip so as to facilitate die bonding.
6: fixing an LED chip with a fluorescent film on a ceramic baseplate, wherein the size of a single LED chip is 2.0x1.6 mm;
7: the mixed and evenly stirred white glue flows around the LED chip and is solidified;
8: titanium dioxide is doped into silica gel, the content of the titanium dioxide is 1 percent, and a silica gel layer with the thickness of 100 mu m is pressed on the surface of the fluorescent film in a mould.
9: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
Example two
1: mixing the fluorescent powder and the silica gel according to a certain mass ratio (the silica gel: the yellow fluorescent powder is 1:1.2), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 55 mu m on a support film, and baking for 30min at the temperature of 80 ℃;
2: attaching the fluorescent film on the high-temperature resistant UV film;
3: fixing LED chips (with the size of 57mil) on the fluorescent film at equal intervals, wherein the distance between the LED chips is 200 mu m; then, the silica gel is dotted in the space between the LED chips, and the LED chips are placed into an oven to cure the fluorescent film and the silica gel;
4: cutting the LED chips into single LED chips with the fluorescent films by a blade according to the central position among the LED chips (namely, the position 100 mu m away from the LED chips);
5: and turning the cut LED chip onto the blue film and expanding the LED chip so as to facilitate die bonding.
6: fixing the LED chip with the fluorescent film on a ceramic baseplate, wherein the size of a single particle is 2.5 x2.5mm;
7: the mixed and evenly stirred white glue flows around the LED chip and is solidified;
8: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
EXAMPLE III
1: mixing the fluorescent powder and the silica gel according to a certain mass ratio (the silica gel: the yellow fluorescent powder is 1:1.15), uniformly mixing by using a defoaming machine, uniformly coating a layer with the thickness of 55 mu m on a support film, and baking for 30min at the temperature of 80 ℃;
2: attaching the fluorescent film on the high-temperature resistant UV film;
3: fixing LED chips (with the size of 30mil) on the fluorescent film at equal intervals, wherein the distance between the LED chips is 150 mu m; then, the silica gel is dotted in the space between the LED chips, and the LED chips are placed into an oven to cure the fluorescent film and the silica gel;
4: cutting the LED chips into single LED chips with the fluorescent films by a blade according to the central position among the LED chips (namely, the position 75 mu m away from the LED chips);
5: turning the cut LED chip onto a blue film, and expanding the LED chip so as to facilitate die bonding;
6: fixing the LED chip with the fluorescent film on an EMC bracket, wherein the size of a single particle is 3.0x3.0 mm;
7: the mixed and evenly stirred white glue flows into a bracket and is baked and cured;
8: and cutting the whole support according to the photoelectric parameter requirement to obtain the LED lamp bead.
It should be noted that the above embodiments can be freely combined as necessary. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (4)
1. A preparation method of an LED lamp bead is characterized by comprising the following steps:
coating a fluorescent powder layer with a preset thickness on the surface of the support film and baking to obtain a fluorescent film;
attaching the fluorescent film to the surface of the UV film;
uniformly arranging the flip LED chips on the surface of the fluorescent film;
dropping silica gel between the LED chips and curing;
cutting the silica gel among the LED chips to obtain single LED chips with the fluorescent films;
fixing the LED chip with the fluorescent film on the surface of the bracket;
the white glue flows between the LED chips and is solidified;
and cutting the white glue between the support and the LED chip according to the requirement, and pressing a lens on the surface of the fluorescent film to obtain the LED lamp bead.
2. The method for preparing the LED lamp bead according to claim 1, wherein a fluorescent powder layer with a preset thickness is coated on the surface of the support film and baked to obtain the fluorescent film, and further comprising the following steps: the fluorescent film has adhesiveness.
3. The method for preparing the LED lamp bead according to claim 1, wherein the flip LED chips are uniformly arranged on the surface of the fluorescent film, and further comprising:
the distance between the LED chips is 50-400 mu m.
4. The method for preparing an LED lamp bead according to any one of claims 1-3, wherein after the step of flowing and curing the white glue between the LED chips, the method further comprises: preparing a silica gel layer on the surface of the fluorescent film;
the white glue between the support and the LED chip is cut according to the requirement in the step, and the LED lamp bead is obtained specifically as follows: and cutting the white glue and the silica gel layer between the support and the LED chip according to requirements, and pressing a lens on the surface of the silica gel layer to obtain the LED lamp bead.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811254410.3A CN111106228A (en) | 2018-10-26 | 2018-10-26 | LED lamp bead preparation method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811254410.3A CN111106228A (en) | 2018-10-26 | 2018-10-26 | LED lamp bead preparation method |
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| CN111106228A true CN111106228A (en) | 2020-05-05 |
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| CN201811254410.3A Pending CN111106228A (en) | 2018-10-26 | 2018-10-26 | LED lamp bead preparation method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111785710A (en) * | 2020-07-28 | 2020-10-16 | 江西省晶能半导体有限公司 | LED lamp bead and preparation method thereof |
| CN112951970A (en) * | 2020-12-31 | 2021-06-11 | 广东晶科电子股份有限公司 | Light-emitting device manufacturing method and light-emitting device |
| CN114388676A (en) * | 2021-12-29 | 2022-04-22 | 深圳市同一方光电技术有限公司 | Preparation method and device of SMD (surface mounted device) device and SMD device |
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