CN106129231A - Light emitting device and method for manufacturing the same - Google Patents
Light emitting device and method for manufacturing the same Download PDFInfo
- Publication number
- CN106129231A CN106129231A CN201610293182.5A CN201610293182A CN106129231A CN 106129231 A CN106129231 A CN 106129231A CN 201610293182 A CN201610293182 A CN 201610293182A CN 106129231 A CN106129231 A CN 106129231A
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- Prior art keywords
- light
- luminescence unit
- emitting device
- wavelength conversion
- conversion layer
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- 238000007639 printing Methods 0.000 claims description 38
- 238000005520 cutting process Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 239000012790 adhesive layer Substances 0.000 description 89
- 239000010410 layer Substances 0.000 description 56
- 239000000463 material Substances 0.000 description 55
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- 238000005538 encapsulation Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 19
- 238000000605 extraction Methods 0.000 description 17
- 230000009466 transformation Effects 0.000 description 15
- 239000012528 membrane Substances 0.000 description 13
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- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
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- -1 pottery Substances 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 7
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- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
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- 229910052797 bismuth Inorganic materials 0.000 description 2
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- 239000000975 dye Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
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- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 235000004237 Crocus Nutrition 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
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- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention provides a light-emitting device and a manufacturing method thereof. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit is provided with two electrode pads which are positioned at the same side of the light emitting unit. The light emitting unit is arranged on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflection protection piece covers at least part of the light-emitting unit and part of the wavelength conversion layer, and two electrode pads of the light-emitting unit are exposed. Based on the above, the light-emitting device of the invention does not need to use the existing supporting bracket to support and fix the light-emitting unit, so that the packaging thickness and the manufacturing cost can be effectively reduced, and meanwhile, the forward light-emitting efficiency of the light-emitting unit can be effectively improved.
Description
Technical field
The invention relates to a kind of light-emitting device and preparation method thereof, and in particular to one to send out
Optical diode is as the light-emitting device and preparation method thereof of light source.
Background technology
In general, package structure for LED is typically to be arranged in by pottery light-emitting diode chip for backlight unit
On the bearing base of the recessed cup type state that material or metal material are formed, with fixing and support light emitting diode
Chip.Afterwards, re-use packing colloid to be coated with light-emitting diode chip for backlight unit, and complete light emitting diode envelope
The making of assembling structure.Now, the potential of light-emitting diode chip for backlight unit in the top of bearing base and is positioned at
In recessed cup.But, the bearing base of recessed cup type state has certain thickness, and light emitting diode is sealed
The thickness of assembling structure cannot effectively reduce, thus it is the most slim to make package structure for LED to meet
The demand changed.
Summary of the invention
The present invention provides a kind of light-emitting device, and it, without using existing bearing support, can have relatively thin
Package thickness and meet the demand of slimming.
The present invention provides the manufacture method of a kind of light-emitting device, in order to make above-mentioned light-emitting device.
The light-emitting device of the present invention, it includes that a wavelength conversion layer, at least one luminescence unit and a reflection are protected
Guard.Wavelength conversion layer has a upper surface relative to each other and a lower surface.Luminescence unit has two electricity
Polar cushion, and two electronic padses are positioned at the same side of luminescence unit.Luminescence unit is arranged in the upper of wavelength conversion layer
On surface and expose two electronic padses.Reflection protection part is coated with at least partially luminescent unit and partial wavelength conversion
Layer, and expose two electronic padses of luminescence unit.
In one embodiment of this invention, above-mentioned light-emitting device also includes: a photic zone, is arranged in ripple
On long conversion layer and between luminescence unit and reflection protection part.
In one embodiment of this invention, above-mentioned photic zone is also disposed at wavelength conversion layer and luminescence unit
Between.
In one embodiment of this invention, above-mentioned reflection protection part also comprises one and contacts with luminescence unit
Reflecting surface.
In one embodiment of this invention, the reflecting surface of above-mentioned reflection protection part is a plane or a curved surface.
In one embodiment of this invention, above-mentioned reflection protection part is coated with the one of wavelength conversion layer the most completely
Side.
In one embodiment of this invention, under a bottom surface of above-mentioned reflection protection part and wavelength conversion layer
Surface forms a plane.
In one embodiment of this invention, above-mentioned reflection protection part the most at least covered section wavelength conversion layer
One side.
In one embodiment of this invention, the above-mentioned partial wavelength conversion layer not being coated with by reflection protection part
The one side of side and reflection protection part form a side plane of light-emitting device.
In one embodiment of this invention, above-mentioned wavelength conversion layer also includes not being coated with by reflection protection part
One first exposure sidepiece with one second exposure sidepiece.It is not parallel that first exposure sidepiece and second exposes sidepiece,
And wavelength conversion layer exposes the thickness at sidepiece in first and is different from wavelength conversion layer at the second exposure sidepiece
Thickness.
In one embodiment of this invention, above-mentioned wavelength conversion layer also include a low concentration fluorescence coating and
One high concentration fluorescence coating, high concentration fluorescence coating is between low concentration fluorescence coating and luminescence unit.
In one embodiment of this invention, above-mentioned reflection protection part is filled between two electronic padses
Gap.
In one embodiment of this invention, between above-mentioned reflection protection part is fully filled with between two electronic padses
One surface of gap and reflection protection part trims the surface in two electronic padses.
In one embodiment of this invention, at least one above-mentioned luminescence unit is multiple luminescence unit, wavelength
Conversion layer has at least one groove, between two luminescence units.
The manufacture method of the light-emitting device of the present invention, it comprises the following steps.One wavelength conversion layer is provided；
Multiple spaced luminescence units are arranged on wavelength conversion layer, and expose each luminescence unit
Two electronic padses；Forming multiple groove on wavelength conversion layer, wherein groove is between luminescence unit；Shape
A reflection protection part is become on wavelength conversion layer and between luminescence unit and to fill up groove, wherein reflection protection
Part exposes the electronic pads of luminescence unit；And carry out a cutting process along groove, to form multiple
Electro-optical device.
In one embodiment of this invention, the degree of depth of above-mentioned each groove is at least the thickness of wavelength conversion layer
The half of degree.
In one embodiment of this invention, the manufacture method of above-mentioned light-emitting device, also include: will interval
After the luminescence unit of arrangement is arranged on wavelength conversion layer, form a photic zone on wavelength conversion layer.
In one embodiment of this invention, the manufacture method of above-mentioned light-emitting device, also include: will interval
Before the luminescence unit of arrangement is arranged on wavelength conversion layer, form a photic zone on wavelength conversion layer.
In one embodiment of this invention, above-mentioned reflection protection part also comprises one and contacts with luminescence unit
Reflecting surface.
In one embodiment of this invention, the reflecting surface of above-mentioned reflection protection part is a plane or a curved surface.
In one embodiment of this invention, above-mentioned wavelength conversion layer also include a low concentration fluorescence coating and
One high concentration fluorescence coating, luminescence unit is arranged on high concentration fluorescence coating.
Based on above-mentioned, owing to the reflection protection part of the present invention is coated with the side surface of luminescence unit, and reflection is protected
The bottom surface of guard trims first bottom surface and the second of the second electronic pads of the first electronic pads in luminescence unit
Bottom surface.Therefore, the light-emitting device of the present invention not only need not use existing bearing support to support and solid
Determine luminescence unit, and can effective less package thickness and cost of manufacture, simultaneously, it is possible to be effectively improved and send out
The forward light extraction efficiency of light unit.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate
Accompanying drawing is described in detail below.
Accompanying drawing explanation
Fig. 1 is shown as the schematic diagram of a kind of light-emitting device of one embodiment of the invention；
Fig. 2 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 3 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 4 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 5 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 6 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 7 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 8 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Fig. 9 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention；
Figure 10 A to Figure 10 D is shown as the manufacture method of a kind of light-emitting device of one embodiment of the invention
Generalized section；
Figure 11 A to Figure 11 C is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
The generalized section of partial steps；
Figure 12 A to Figure 12 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section；
Figure 13 A to Figure 13 D is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
The generalized section of partial steps；
Figure 14 A to Figure 14 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section；
Figure 15 A to Figure 15 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section；
Figure 16 A to Figure 16 C is shown as the generalized section of the light-emitting device of multiple embodiments of the present invention；
Figure 17 A to Figure 17 E is shown as the manufacture method of a kind of light-emitting device of one embodiment of the invention
Generalized section；
Figure 18 A and Figure 18 B is shown as the section signal of two kinds of light-emitting devices of two embodiments of the present invention
Figure；
Figure 19 A to Figure 19 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section；
Figure 20 A is shown as the schematic perspective view of the light-emitting device of Figure 19 E；
Figure 20 B is shown as the generalized section of the line X-X along Figure 20 A；
Figure 21 A is shown as the schematic perspective view of a kind of light-emitting device of another embodiment of the present invention；
Figure 21 B and Figure 21 C is shown as along line the X '-X ' of Figure 21 A and cuing open of line Y '-Y '
Face schematic diagram.
Description of reference numerals:
10: substrate；
10a: two-sided glued membrane；
20: another substrate；
20a:UV glued membrane；
30: the first mould release membrances；
40: the second mould release membrances；
100a、100b、100c、100d、100e、100f、100g、100h、100i、100j、100k、
100m, 100n, 100p, 200a, 200b, 200c, 200d: light-emitting device；
101: unit；
110a, 110b, 110c, 110c ', 220: luminescence unit；
112a, 112b, 112c, 222: upper surface；
113,113 ', 223: the first electronic pads；
113a: the first bottom surface；
113b: the first side surface；
114a, 114b, 114c, 224: lower surface；
115,115 ', 225: the second electronic pads；
115a: the second bottom surface；
115b: the second side surface；
116a, 116b, 116c: side surface；
120,120 ', 120c, 120d, 120m, 120n, 120p, 240,240a, 240b: anti-
Penetrate guard member；
121: edge；
122,122c, 122d: end face；
124,124m, 124n: bottom surface；
130d, 130c: the first extension electrode；
140d, 140c: the second extension electrode；
150: encapsulation glue-line；
150c, 150c ', 230a, 230b, 230c: printing opacity glue-line；
160,160 ': photic zone；
170,170 ', 170a, 210,210 ': wavelength convert glue-line；
171,171a: lateral edges；
172,172a, 214,214 ': high concentration fluorescent adhesive layer；
173: end face；
173a: edge；
174,174a, 212,212 ', 212 ": low concentration fluorescent adhesive layer；
212a, 212a ', 212a ": flat part；
212b: protuberance；
212b ': prominent sub-portion；
226: side surface；
232: concave surface；
234: convex surface；
236: inclined surface；
242,242a, 242b: reflecting surface；
A: unit；
C: groove；
C1, C1 ': groove；
C2 ': the second groove；
D: the degree of depth；
E: extension electrode layer；
G: spacing；
H: difference in height；
L: line of cut；
M1: the first metal layer；
M2: the second metal level；
S: gap；
T: thickness；
T1: the first thickness；
T2: the second thickness；
W: width；
X-X, X '-X ', Y-Y, Y '-Y ': line.
Detailed description of the invention
Fig. 1 is shown as the schematic diagram of a kind of light-emitting device of one embodiment of the invention.Please refer to Fig. 1,
In the present embodiment, light-emitting device 100a includes a luminescence unit 110a and a reflection protection part 120.
Luminescence unit 110a has a upper surface 112a and a lower surface 114a relative to each other, one is connected table
The side surface 116a of face 112a and lower surface 114a and being positioned on lower surface 114a and separated from one another
One first electronic pads 113 and one second electronic pads 115.Reflection protection part 120 is coated with luminescence unit 110a
Side surface 116a and expose at least part of upper surface 112a and expose the first electronic pads 113 extremely
Small part one first bottom surface 113a and at least part of one second bottom surface 115a of the second electronic pads 115.
More particularly, as it is shown in figure 1, the upper surface 112a of the luminescence unit 110a of the present embodiment with
One end face 122 of reflection protection part 120 trims, bottom surface 124 and first electricity of reflection protection part 120
One first bottom surface 113a of polar cushion 113 and one second bottom surface 115a of the second electronic pads 115 trims,
And reflection protection part 120 can cover or expose luminescence unit 110a and be positioned at the first electronic pads 113 and one
Lower surface 114a between two electronic padses 115.In the present embodiment, the side surface of luminescence unit 110a
116a is perpendicular to upper surface 112a and lower surface 114a, but is not limited thereto, and luminescence unit 110a
E.g. light emitting diode, the emission wavelength (including but not limited to) of light emitting diode is between 315 nanometers extremely
Between 780 nanometers, light emitting diode includes but not limited to ultraviolet light, blue and green light, gold-tinted, Fructus Citri tangerinae light
Or red light-emitting diode.
The reflectance of reflection protection part 120 is at least above 90%, say, that the reflection of the present embodiment is protected
Guard 120 has the characteristic of high reflectance, and wherein the material of reflection protection part 120 is for including one mixed with height
The macromolecular material of reflective particle, high reflective particle is such as but not limited to being titanium dioxide (TiO2) powder, and
Macromolecular material is such as not limited to epoxy resin or silicones.Additionally, the luminescence unit 110a of the present embodiment
The first electronic pads 113 and the material of the second electronic pads 115 be a metal material or metal alloy, such as
It is gold, aluminum, stannum, silver, bismuth, indium or a combination thereof, but is not limited.
In the present embodiment, reflection protection part 120 is coated with the side surface 116a of luminescence unit 110a, and cruelly
Expose the first bottom surface 113a and second electronic pads 115 of first electronic pads 113 of luminescence unit 110a
The second bottom surface 115a, light-emitting device 100a need not use existing bearing support to support and fixing send out
Light unit 110a, and it is effectively reduced package thickness and cost of manufacture, simultaneously, it is possible to by having height
The reflection protection part 120 of reflectance is effectively improved the forward light extraction efficiency of luminescence unit 110a.
Should be noted that at this, following embodiment continues to use element numbers and the partial content of previous embodiment,
Wherein using identical label to represent the identical or element of approximation, the explanation of constructed content refers to
Previous embodiment, it is no longer repeated for following embodiment.
Fig. 2 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 1 and Fig. 2, the Main Differences of the light-emitting device 100a in light-emitting device 100b Yu Fig. 1 of the present embodiment
Part is: the side surface 116b of the luminescence unit 110b of the present embodiment non-perpendicular to upper surface 112b
With lower surface 114b, in the present embodiment, the surface area of the upper surface 112b of luminescence unit 100b is more than following table
The surface area of face 114b, the angle of side surface 116b and lower surface 114b is e.g. between 95 degree to 150
Between degree.The upper surface 112b of the luminescence unit 110b of the present embodiment, side surface 116b and lower surface 114b
The external form profile defined presents inverted trapezoidal, therefore can reduce luminescence unit 110b and laterally go out light, and high anti-
Penetrate the reflection protection part 120 of rate can further be effectively improved the forward of luminescence unit 110b and go out light efficiency
Rate.
Fig. 3 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 1 and Fig. 3, the Main Differences of the light-emitting device 100a in light-emitting device 100c Yu Fig. 1 of the present embodiment
Part is: the light-emitting device 100c of the present embodiment also includes one first extension electrode 130c and 1 the
Two extension electrode 140c.First extension electrode 130c is arranged on the bottom surface 124 of reflection protection part 120,
And be electrically connected with the first electronic pads 113.Second extension electrode 140c is arranged in reflection protection part 120
On bottom surface 124, and it is electrically connected with the second electronic pads 115.First extension electrode 130c and second extends
Electrode 140c separated from one another and cover reflection protection part 120 at least part of bottom surface 124.
As it is shown on figure 3, the first extension electrode 130c of the present embodiment and setting of the second extension electrode 140c
Put completely overlapped in the first electronic pads 113 and the second electronic pads 115, and towards reflection protection part 120
Edge extends.Certainly, in other unshowned embodiments, the first extension electrode and the second extension electrode
Setting also can partially overlap the first electronic pads and the second electronic pads, if the first extension electrode and second
Extension electrode is electrically connected to the setting of the first electronic pads and the second electronic pads and is the present embodiment and is intended to protect
Scope.Additionally, the first extension electrode 130c and the second extension electrode 140c of the present embodiment expose
The portion bottom surface 124 of reflection protection part 120.
In the present embodiment, the material of the first extension electrode 130c and the second extension electrode 140c can be distinguished
It is same or different from first electronic pads 113 and second electronic pads 115 of luminescence unit 110a.When first prolongs
The material stretching electrode 130c and the second extension electrode 140c is same as first electricity of luminescence unit 110a respectively
When polar cushion 113 and the second electronic pads 115, can between the first extension electrode 130c and the first electronic pads 113
Connect for seamless, be integrated structure, the second extension electrode 140c and the second electronic pads 115
Between can be seamless connect, be integrated structure.When the first extension electrode 130c and second prolongs
The material stretching electrode 140c is different from first electronic pads 113 and second electrode of luminescence unit 110a
When padding 115, the material of the first extension electrode 130c and the second extension electrode 140c can be for example silver, gold,
Bismuth, stannum, indium or the alloy of above-mentioned material combination.
Owing to the light-emitting device 100c of the present embodiment has the first electronic pads 113 with luminescence unit 110a
The the first extension electrode 130c being electrically connected with the second electronic pads 115 and the second extension electrode 140c,
Therefore can be effectively increased the electrode contact area of light-emitting device 100c, be beneficial to follow-up by this light-emitting device
100c assembles with other external circuits, can be effectively improved para-position precision and packaging efficiency.Citing comes
Saying, the area of the first extension electrode 130c is more than the area of the first electronic pads 113, the second extension electrode 140c
Area more than the area of the second electronic pads 115.
Fig. 4 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 3 and Fig. 4, the Main Differences of the light-emitting device 100c in light-emitting device 100d Yu Fig. 3 of the present embodiment
Part is: the edge of the first extension electrode 130d of the present embodiment and the limit of the second extension electrode 140d
Edge trims in the edge of reflection protection part 120.
Fig. 5 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 1 and Fig. 5, the Main Differences of the light-emitting device 100a in light-emitting device 100e Yu Fig. 1 of the present embodiment
Part is: the light-emitting device 100e of the present embodiment also includes an encapsulation glue-line 150, wherein encapsulates glue-line
150 are arranged on the upper surface 112a of luminescence unit 110a, to increase light extraction efficiency and to improve light type.Envelope
Dress glue-line 150 can also extend at least part of upper surface 122 of reflection protection part 120, packaging plastic
The edge of layer 150 can also trim in the edge of reflection protection part 120.It addition, in encapsulation glue-line 150
Can also be doped with at least one material for transformation of wave length, material for transformation of wave length system is in order to by luminescence unit 110a
The wavelength convert of at least part of light sent becomes other wavelength, and the material of material for transformation of wave length includes
Fluorescent material, phosphor material, dyestuff, quanta point material and combinations thereof, the wherein grain of material for transformation of wave length
Footpath is e.g. between 3 microns to 50 microns.It addition, can also be doped with in encapsulation glue-line 150
The oxide of high scattering power, e.g. titanium dioxide (TiO2) or silicon dioxide (SiO2), light to increase
Efficiency.
In an embodiment of the present invention, luminescence unit includes but not limited to ultraviolet light, blue and green light, Huang
Light, Fructus Citri tangerinae light or red light-emitting unit, and material for transformation of wave length includes but not limited to redness, orange, orange
The material for transformation of wave length of color, yellow, yellow green or green or a combination thereof, in order to be sent luminescence unit
Light partly or entirely carry out wavelength convert.The light of wavelength convert and the non-switched light of wavelength carry out mixed light
After so that light-emitting device sends the dominant wavelength (dominant wavelenghth) light at a particular range, its
Photochromic such as include but not limited to redness, orange, crocus, amber, yellow, yellow green or green,
Or sending the white light that there is specific phase to colour temperature, the scope of relative colour temperature is e.g. between 2500K extremely
Between 7000K, but it is not limited.
Fig. 6 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 6 and Fig. 4, the Main Differences of the light-emitting device 100d in light-emitting device 100f Yu Fig. 4 of the present embodiment
Part is: the light-emitting device 100f of the present embodiment also includes an encapsulation glue-line 150, wherein encapsulates glue-line
150 are arranged on the upper surface 112a of luminescence unit 110a, to increase light extraction efficiency and to improve light type.Envelope
Dress glue-line 150 can also extend at least part of upper surface 122 of reflection protection part 120, packaging plastic
The edge of layer 150 can also trim in the edge of reflection protection part 120, it addition, in encapsulation glue-line 150
Can also be doped with at least one material for transformation of wave length, material for transformation of wave length system is in order to by luminescence unit 110a
The wavelength convert of at least part of light sent becomes other wavelength, and the material of material for transformation of wave length includes
Fluorescent material, phosphor material, dyestuff, quanta point material and combinations thereof, the wherein grain of material for transformation of wave length
Footpath is e.g. between 3 microns to 50 microns.It addition, can also be doped with in encapsulation glue-line 150
The oxide of high scattering power, e.g. titanium dioxide (TiO2) or silicon dioxide (SiO2), light to increase
Efficiency.
Should be noted that, in the embodiment of Fig. 4 and Fig. 6, the edge of the first extension electrode 130d and
The edge of two extension electrode 140d trims in the edge of reflection protection part 120, and such design is the most permissible
Expand the contact area of electrode, and in processing procedure, reflection protection part 120 can encapsulate multiple alternate simultaneously
Every luminescence unit 110a, afterwards formed patterned metal layer to form the first extension electrode 130d respectively
With the second extension electrode 140d, cut the most again, make the first extension electricity of each light-emitting device 100f
The edge of pole 130d and the edge of the second extension electrode 140d trim in the edge of reflection protection part 120,
So can effectively save processing time.
Fig. 7 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 7 and Fig. 5, the Main Differences of the light-emitting device 100e in light-emitting device 100g Yu Fig. 5 of the present embodiment
Part is: the light-emitting device 100g of the present embodiment also includes a photic zone 160, is arranged in encapsulation glue-line
On 150, the wherein light transmittance of photic zone 160, e.g. more than 50%.In the present embodiment, printing opacity
Material e.g. glass, pottery, resin, acryl or the silica gel etc. of layer 160, its object is to send out
Light produced by light unit 110a is directed to the external world, can be effectively increased light-emitting device 100g luminous flux and
Light extraction efficiency, and also can effectively protect luminescence unit 110a to avoid being attacked with oxygen by extraneous aqueous vapor.
Fig. 8 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 8 and Fig. 7, the main difference of the light-emitting device 100g in light-emitting device 100h Yu Fig. 7 of the present embodiment
Different part is: the photic zone 160 ' of the light-emitting device 100h of the present embodiment is disposed on luminescence unit 110a
Upper surface 110a and encapsulation glue-line 150 between.
Fig. 9 is shown as the schematic diagram of a kind of light-emitting device of another embodiment of the present invention.Please also refer to
Fig. 9 and Fig. 6, the Main Differences of the light-emitting device 100f in light-emitting device 100i Yu Fig. 6 of the present embodiment
Part is: the light-emitting device 100i of the present embodiment also includes a photic zone 160, is arranged in encapsulation glue-line
On 150, the wherein light transmittance of photic zone 160, e.g. more than 50%.In the present embodiment, printing opacity
Material e.g. glass, pottery, resin, acryl or the silica gel etc. of layer 160, its object is to send out
Light produced by light unit 110a is directed to the external world, can be effectively increased light-emitting device 100i luminous flux and
Light extraction efficiency, and also can effectively protect luminescence unit 110a to avoid being attacked with oxygen by extraneous aqueous vapor.
Below by with light-emitting device 100a, 100g, 100d, the 100i in Fig. 1, Fig. 7, Fig. 4 and Fig. 9
As a example by, and it is respectively cooperating with 10A to Figure 10 D, Figure 11 A to Figure 11 C, Figure 12 A to Figure 12 E and figure
The manufacture method of the light-emitting device of the present invention is described in detail by 13A to Figure 13 D.
Figure 10 A to Figure 10 D is shown as the manufacture method of a kind of light-emitting device of one embodiment of the invention
Generalized section.First, refer to Figure 10 A, multiple luminescence unit 110a are arranged in a substrate 10
On, each of which luminescence unit 110a has upper surface 112a relative to each other and lower surface 114a, company
Connect the side surface 116a of surface 112a and lower surface 114a and be positioned on lower surface 114a and each other
The first electronic pads 113 and the second electronic pads 115 separated.First electronic pads of each luminescence unit 110a
113 and second electronic pads 115 arrange on the substrate 10.It is to say, the light-emitting area of luminescence unit 110a,
I.e. upper surface 112a is to be relatively distant from substrate 10.In the present embodiment, the material of substrate 10 is the most not
Rust steel, pottery or other nonconducting materials.Luminescence unit 110a e.g. light emitting diode, luminous two
The emission wavelength (including but not limited to) of pole pipe between 315 nanometers to 780 nanometers, light emitting diode bag
Include but be not limited to ultraviolet light, blue and green light, gold-tinted, Fructus Citri tangerinae light or red light-emitting diode.
Then, refer to Figure 10 B, form a reflection protection part 120 ' on substrate 10, wherein reflect
Guard member 120 ' is coated with each luminescence unit 110a.It is to say, reflection protection part 120 ' is complete and straight
Meet the covering upper surface 112a of luminescence unit 110a, lower surface 114a and side surface 116a, and fill up
Space between first electronic pads 113 and the second electronic pads 115.Herein, reflection protection part 120 '
Reflectance is at least above 90%, say, that the reflection protection part 120 ' of the present embodiment can have high anti-
Penetrating the characteristic of rate, wherein the material of reflection protection part 120 ' includes the macromolecule of a high reflective particle of doping
Material, high reflective particle is such as but not limited to being titanium dioxide (TiO2) powder, and macromolecular material is the most not
It is limited to epoxy resin or silicones.
Then, refer to Figure 10 C, remove partially reflective guard member 120 ', and form reflection protection part
120, wherein reflection protection part 120 exposes at least part of upper surface 112a of each luminescence unit 110a.
Now, the upper surface 112a of each luminescence unit 110a may trim in the end face of reflection protection part 120
122.Herein, the method removing partially reflective guard member 120 ' includes e.g. polishing or polishing processes.
Afterwards, refer to Figure 10 D, carry out a cutting process, to cut reflection protection along line of cut L
Part 120, and form multiple light-emitting device 100a separated from one another, each of which light-emitting device 100a is respectively
Having at least one luminescence unit 110a and reflection protection part 120, reflection protection part 120 is coated with luminescence
The side surface 116a of unit 110a and expose its at least part of upper surface 112a.
Finally, refer again to Figure 10 D, remove substrate 10, to expose the reflection of each light-emitting device 100a
The bottom surface 124 of guard member 120, and expose first electronic pads 113 of each light-emitting device 100a extremely
Small part the first bottom surface 113a and at least part of second bottom surface 115a of the second electronic pads 115.
Figure 11 A to Figure 11 C is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
The generalized section of partial steps.The manufacture method of the light-emitting device of the present embodiment is with above-mentioned Figure 10 A extremely
It is in place of the Main Differences of the manufacture method of the light-emitting device in Figure 10 D: Figure 10 C and Figure 10 D's
Between step, imply that after removing partially reflective guard member 120 ', and before carrying out cutting process,
Refer to Figure 11 A, form encapsulation glue-line 150 on luminescence unit 110a with reflection protection part 120, with
Increase light extraction efficiency and improve light type.Herein, encapsulation glue-line 150 covers the upper surface of luminescence unit 110a
Can also be doped with at least one in 112a and the end face 122 of reflection protection part 120, and encapsulation glue-line 150
Plant material for transformation of wave length.The explanation of material for transformation of wave length refer to previous embodiment.It addition, encapsulation glue-line
The oxide of high scattering power, e.g. titanium dioxide (TiO can also be doped with in 1502) or titanium dioxide
Silicon (SiO2), to increase light extraction efficiency.
Then, refer to Figure 11 B, form a photic zone 160 in luminescence unit 110a and reflection protection part
On 120, wherein photic zone 160 is positioned on encapsulation glue-line 150, and covers encapsulation glue-line 150.Citing comes
Saying, the light transmittance of photic zone 160 is more than 50%.In this embodiment, the material of photic zone 160 is such as
It is glass, pottery, resin, acryl or silica gel etc., its object is to be produced by luminescence unit 110a
Light be directed to the external world, the luminous flux of follow-up formed luminescence unit envelope photo structure 100g can be effectively increased
And light extraction efficiency, and also can effectively protect luminescence unit 110a to avoid being invaded with oxygen by extraneous aqueous vapor
Attack.
Afterwards, refer to Figure 11 C, carry out a cutting process, with along line of cut L cutting photic zone 160,
Encapsulation glue-line 150 and reflection protection part 120, and form multiple light-emitting device 100g separated from one another.
Finally, refer again to Figure 11 C, remove substrate 10, to expose the reflection protection of each light-emitting device 100g
The bottom surface 124 of part 120, the bottom surface 124 of the reflection protection part 120 of each of which light-emitting device 100g is sudden and violent
Expose at least part of first bottom surface 113a and at least portion of the second electronic pads 115 of the first electronic pads 113
Divide the second bottom surface 115a.In an alternative embodiment of the invention, it is possible to first remove substrate 10 and carry out a cutting again
Program.
Figure 12 A to Figure 12 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section.Please refer to Figure 12 A, the manufacture method of the light-emitting device of the present embodiment and above-mentioned figure
It is in place of the Main Differences of the manufacture method of the light-emitting device in 10A to Figure 10 D: refer to Figure 12 A,
The luminescence unit 110a of the present embodiment is not to be contacted base by the first electronic pads 113 with the second electronic pads 115
Plate 10, but contacted substrate 10 by its upper surface 112a.
Then, refer to Figure 12 B, form a reflection protection part 120 ' on substrate, wherein reflection protection
Part is coated with each luminescence unit 110a.
Then, refer to Figure 12 C, remove partially reflective guard member 120 ', to form reflection protection part
120, wherein reflection protection part 120 exposes first electronic pads 113 of each luminescence unit 110a extremely
Small part the first bottom surface 113a and at least part of second bottom surface 115a of the second electronic pads 115.
Then, refer to Figure 12 D, form a patterned metal layer as extension electrode layer E, be positioned at every
On first bottom surface 113a of first electronic pads 113 of one luminescence unit 110a and the second electronic pads 115
The second bottom surface 115a on.Herein, formed the method e.g. vapour deposition method of patterned metal layer, sputtering method,
Galvanoplastic or electroless plating method and light shield etching method.
Then, refer to Figure 12 E, carry out a cutting process, to cut extension electrode layer E along line of cut
With reflection protection part 120, and form multiple light-emitting device 100d separated from one another.Each light-emitting device 100d
It is respectively provided with the side surface 116a's of at least one luminescence unit 110a, at least cladding luminescence unit 110a
First extension electrode 130d of reflection protection part 120, directly contact the first electronic pads 113 and directly connecing
Touch the second extension electrode 140d of the second electronic pads 115.First extension electrode 130d and second extends electricity
Pole 140d is separated from one another and exposes at least part of bottom surface 124 of reflection protection part 120.Now, first
The area of extension electrode 130d can be more than the area of the first electronic pads 113, and the second extension electrode 140d
Area can be more than the area of the second electronic pads 115.The edge of the first extension electrode 130d and second extends
The edge of electrode 140d trims in the edge of reflection protection part 120.
Finally, refer again to Figure 12 E, remove substrate 10, to expose the reflection of each light-emitting device 100d
The end face 122 of guard member 120 and the upper surface 112a of luminescence unit 110a, each of which light-emitting device
The end face 122 of the reflection protection part 120 of 100g trims the upper surface 112a in luminescence unit 110a.?
In another embodiment of the present invention, it is possible to first remove substrate 10 and carry out a cutting process again.
Figure 13 A to Figure 13 D is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
The generalized section of partial steps.The manufacture method of the light-emitting device of the present embodiment is with above-mentioned Figure 12 A extremely
It is in place of the Main Differences of the manufacture method of the light-emitting device in Figure 12 E: Figure 12 D and Figure 12 E's
Between step, imply that after forming extension electrode layer E, and before carrying out cutting processing procedure, refer to
Figure 13 A, it is provided that another substrate 20, and be arranged on extension electrode layer E.Herein, another substrate 20
Material e.g. rustless steel, pottery or other nonconducting materials.Then, refer again to Figure 13 A,
After another substrate 20 is provided, remove substrate 10, to expose the end face 122 of reflection protection part 120
And the upper surface 112a of luminescence unit 110a, the upper surface 112a of each of which luminescence unit 110a cut
Neat in the end face 122 of reflection protection part 120.
Then, refer to Figure 13 B, form encapsulation glue-line 150 in luminescence unit 110a and reflection protection part
On 120, to increase light extraction efficiency and to improve light type.Herein, encapsulation glue-line 150 covers luminescence unit 110a
The end face 122 of upper surface 112a and reflection protection part 120, and can also adulterate in encapsulation glue-line 150
There is at least one material for transformation of wave length.The explanation of material for transformation of wave length refer to previous embodiment.It addition,
The oxide of high scattering power, e.g. titanium dioxide (TiO can also be doped with in encapsulation glue-line 1502)
Or silicon dioxide (SiO2), to increase light extraction efficiency.
Then, refer to Figure 13 C, form a photic zone 160 in luminescence unit 110a and reflection protection part
On 120, wherein photic zone 160 is positioned on encapsulation glue-line 150, and covers encapsulation glue-line 150.Citing comes
Saying, the light transmittance of photic zone 160 is more than 50%.Herein, the material of photic zone 160 e.g. glass,
Pottery, resin, acryl or silica gel etc., its object is to guide by light produced by luminescence unit 110a
To extraneous, luminous flux and the light that can be effectively increased the follow-up luminescence unit formed envelope photo structure 100i take out
Rate, and also can effectively protect luminescence unit 110a to avoid being attacked with oxygen by extraneous aqueous vapor.
Afterwards, refer to Figure 13 D, carry out a cutting process, with along line of cut L cutting photic zone 160,
Encapsulation glue-line 150, reflection protection part 120 and extension electrode layer E, and form multiple luminescence separated from one another
Device 100i.Finally, refer again to Figure 13 D, remove another substrate 20, to expose each light-emitting device
The first extension electrode 130d and the second extension electrode 140d of 100i.In an alternative embodiment of the invention,
Also can first remove substrate 20 and carry out a cutting process again.
Figure 14 A to Figure 14 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section.Please refer to Figure 14 A, it is provided that wavelength convert glue-line 170, wherein a wavelength convert
Glue-line 170 includes that a low concentration fluorescent adhesive layer 174 and is positioned at the height on low concentration fluorescent adhesive layer 174
Concentration fluorescent adhesive layer 172.Herein, the step forming wavelength convert glue-line 170 e.g. first passes through admixture
The mode that mixes with colloid (it is i.e. that liquid or molten state colloid are uniformly mixed with material for transformation of wave length, wavelength
Transition material e.g. fluorescent material but be not limited), to form wavelength convert glue-line 170, stand afterwards
Wavelength convert glue-line 170 a period of time, after the sedimentations of 24 hours, i.e. form the height that levels separates
Concentration fluorescent adhesive layer 172 and low concentration fluorescent adhesive layer 174.It is to say, the wavelength convert of the present embodiment
Layer 170 is with two-layer glue-line as an example.Certainly, in other embodiments, refer to Figure 14 A ',
Thering is provided a wavelength convert glue-line 170 ', wherein wavelength convert glue-line 170 ' is single glue-line, and this still falls within
The present invention is intended to the scope protected.
Then, refer to Figure 14 B, multiple spaced luminescence unit 110c are arranged in wavelength convert
On glue-line 170, each of which luminescence unit 110c has a upper surface 112c relative to each other with once
Surface 114c, one connect the side surface 116c of upper surface 112c and lower surface 114c and be positioned at lower surface
One first electronic pads 113 and one second electronic pads 115 upper and separated from one another for 114c, and luminescence unit 110c
Upper surface 112c be positioned on the high concentration fluorescent adhesive layer 172 of wavelength convert glue-line 170., then divide then
Do not form the printing opacity glue-line 150c that multiple material comprises printing opacity colloid and to extend on wavelength convert glue-line 170
To the side surface 116c of luminescence unit 110c, wherein printing opacity glue-line 150c is not completely covered luminescence
The side surface 116c of unit 110c, but as shown in Figure 14B, printing opacity glue-line 150c are that to have curvature oblique
Face, and the closer to the upper surface 112c of luminescence unit 110c, i.e. near wavelength convert glue-line 170, printing opacity
The thickness of glue-line 150c is the thickest.Herein, the purpose of printing opacity glue-line 150c is fixing luminescence unit 110c
Position.
Should be noted that, in other embodiments, refer to Figure 14 B ', it is possible to by spaced
Before luminescence unit 110c is arranged on wavelength convert glue-line 170, formation one is uncured and material comprises
The printing opacity glue-line 150c ' of light colloid is on wavelength convert glue-line 170.And by luminescence unit 110c interval row
After being arranged on wavelength convert glue-line 170, printing opacity glue-line 150c ' is extensible is arranged in luminous list row
Between unit 110c and high concentration fluorescent adhesive layer 172.
Then, please also refer to Figure 14 B and Figure 14 C, after printing opacity glue-line 150c ' solidifies, carry out one
First cutting process, to cut wavelength convert glue-line 170, and forms multiple unit 101 separated from one another,
Each of which unit 101 is respectively provided with at least one luminescence unit 110c and is arranged in luminescence unit 110c
The wavelength convert glue-line 170 of upper surface 112c, and the wavelength convert glue-line 170 of each unit 101
Both sides of the edge 171 extend to outside the side surface 116c of luminescence unit 110c.And then, refer again to
Figure 14 C, is arranged in spaced unit 101 on a substrate 10.In the present embodiment, substrate 10
Material e.g. rustless steel, pottery or other nonconducting materials, be not any limitation as at this.
Afterwards, refer to Figure 14 D, form a reflection protection part 120c and and be coated with each on substrate 10
The side surface 116c of the luminescence unit 110c of unit 101 and the edge 171 of wavelength convert glue-line 170.
Herein, the generation type of reflection protection part 120c is e.g. formed by mode for dispensing glue, wherein reflects
Guard member 120c directly covers printing opacity glue-line 150c and extending over along printing opacity glue-line 150c and turns in wavelength
Change the edge 171 of glue-line 170.First electronic pads 113 and second electronic pads 115 of luminescence unit 110c
Orthographic projection on substrate 10 is not overlapped in reflection protection part 120c orthographic projection on substrate 10.Herein,
Reflection protection part 120c e.g. one white adhesive layer.
Finally, please also refer to Figure 14 D and Figure 14 E, carry out one second cutting process, to cut reflection
Guard member 120c, and remove substrate 10, and form multiple light-emitting device 100j separated from one another.Each
Light-emitting device 100j is respectively provided with at least one luminescence unit 101 and the side of cladding luminescence unit 110c
The reflection protection part 120c at the edge 171 of surface 116c and wavelength convert glue-line 170.Removing substrate
After 10, an end face 122c of the reflection protection part 120c exposing each light-emitting device 100j turns with wavelength
Change an end face 173 of glue-line 170.In an alternative embodiment of the invention, it is possible to first remove substrate 10 and enter again
Row one cutting process.So far, the making of light-emitting device 100j has been completed.
Structurally, refer again to Figure 14 E, the light-emitting device 100j of the present embodiment includes luminescence unit
110c, reflection protection part 120c, printing opacity glue-line 150c and wavelength convert glue-line 170.Wavelength convert glue
Layer 170 is arranged on the upper surface 112c of luminescence unit 110c, and wherein wavelength convert glue-line 170 includes
Low concentration fluorescent adhesive layer 174 and high concentration fluorescent adhesive layer 172, and high concentration fluorescent adhesive layer 172 is positioned at
Between low concentration fluorescent adhesive layer 174 and luminescence unit 110c, and the edge 171 of wavelength convert glue-line 170
Extend to outside the side surface 116c of luminescence unit 110c.Herein, low concentration fluorescent adhesive layer 174 can be used
Come as light transmission protective layer, to increase water-gas transfer path, effectively prevent aqueous vapor from penetrating into.Printing opacity glue-line 150c
It is arranged between the side surface 116c of luminescence unit 110c and reflection protection part 120c, in order to fixing luminescence
The position of unit 110c.The reflection protection part 120c of the present embodiment is along covering luminescence unit 110c
The printing opacity glue-line 150c of side surface 116c and be also coated on the edge 171 of wavelength convert glue-line 170, therefore
The light-emitting device 100j of the present embodiment need not use existing bearing support support and fix luminescence unit
110c, and it is effectively reduced package thickness and cost of manufacture.Simultaneously, it is possible to by having high reflectance
Reflection protection part 120c be effectively improved the forward light extraction efficiency of luminescence unit 110c.Herein, reflection
It is to trim the end face 173 in wavelength convert glue-line 170 that the end face 122c of guard member 120c embodies.
Figure 15 A to Figure 15 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section.Please refer to Figure 15 A, it is provided that one first mould release membrance 30, then, it is provided that a wavelength
Glue-line 170a is on the first mould release membrance 30 in conversion, and wavelength convert glue-line 170a can be simple layer glue-line,
Or multilamellar glue-line, in the present embodiment, wavelength convert glue-line 170a is to include a low concentration fluorescent adhesive layer
174a and one is positioned at the high concentration fluorescent adhesive layer 172a on low concentration fluorescent adhesive layer 174a.Herein, shape
The step becoming wavelength convert glue-line 170a e.g. first passes through the mode that admixture mixes with colloid and forms wavelength and turn
Change glue-line 170a, stand wavelength convert glue-line 170a a period of time afterwards, after 24 hours, i.e. formed
The low concentration fluorescent adhesive layer 172a separated and high concentration fluorescent adhesive layer 174a.Herein, the first mould release membrance 30
The most two-sided glued membrane.
Then, refer again to Figure 15 A, multiple spaced luminescence unit 110c are arranged in wavelength and turn
Changing on glue-line 170A, each of which luminescence unit 110c has a upper surface 112c and relative to each other
Lower surface 114c, one connect the side surface 116c of upper surface 112c and lower surface 114c and be positioned at following table
On the 114c of face and one first electronic pads 113 and one second electronic pads 115 separated from one another, and luminescence unit
The upper surface 112c of 110c is positioned on the high concentration fluorescent adhesive layer 172a of wavelength convert glue-line 170a.Herein,
Adjacent two luminescence unit 110c have spacing G, and this spacing G e.g. 700 microns.Then, then
Form multiple printing opacity glue-line 150c respectively on the side surface 116c of luminescence unit 110c, wherein printing opacity glue
Layer 150c is not completely covered the side surface 116c of luminescence unit 110c, but as shown in fig. 15b,
Printing opacity glue-line 150c is to have curvature inclined-plane, and the closer to the upper surface 112c of luminescence unit 110c, thoroughly
The thickness of light glue-line 150c is the thickest.Herein, the purpose of printing opacity glue-line 150c is fixing luminescence unit 110c
Position.
Then, refer to Figure 15 B, carry out one first cutting process, with cutting of high-concentration fluorescent adhesive layer 172a
And part low concentration fluorescent adhesive layer 174a, and form multiple groove C.As shown in fig. 15b, for the first time
Cutting process is not completely switched off wavelength convert glue-line 170a, but only cuts off high concentration fluorescent adhesive layer
172a and cut portion low concentration fluorescent adhesive layer 174a.Herein, the width W e.g. 400 of groove C
Micron, and the half of the thickness T of degree of depth D of groove C e.g. wavelength convert glue-line 170a.Wavelength
The thickness T e.g. 140 microns of conversion glue-line 170a, and degree of depth D of groove C e.g. 70 microns.
Now, the position of groove C with the position of encapsulation glue-line 150c do not interfere.
Afterwards, refer to Figure 15 C, form a reflection protection part 120d in low concentration fluorescent adhesive layer 174a
Upper and the side surface 116c of cladding luminescence unit 110c, wherein reflection protection part 120d fill up groove C and
Expose first electronic pads 113 and second electronic pads 115 of luminescence unit 110c.Herein, reflection is protected
Guard 120d e.g. one white adhesive layer.
Finally, please also refer to Figure 15 D and Figure 15 E, remove the first release layer 30, and provide one second
Release layer 40, make first electronic pads 113 of luminescence unit 110c contact with the second electronic pads 115 second from
Type film 40.Herein, the second release layer 40 e.g. UV glue or double faced adhesive tape.Then, carry out one second to cut
Cut program, to cut along the bearing of trend of groove C (bearing of trend of line of cut L in the most graphic 15D)
Cut reflection protection part 120d and low concentration fluorescent adhesive layer 174a, and form multiple light-emitting device separated from one another
100k.Each light-emitting device 100k is respectively provided with at least one luminescence unit 110c, is arranged in luminescence unit
The wavelength convert glue-line 170a of the upper surface 112c of 110c and the side surface of cladding luminescence unit 110c
The reflection protection part 120d of 116c.In the present embodiment, wavelength convert glue-line 170a is that to comprise high concentration glimmering
Light glue-line 172a and low concentration fluorescent adhesive layer 174a, herein, the low concentration of wavelength convert glue-line 170a is glimmering
The edge 171a of light glue-line 174a trims in the edge 121 of reflection protection part 120d, and reflection protection part
120d is also coated with the edge 173a of high concentration fluorescent adhesive layer 172a.Remove the second releasing layer 40, and complete
The making of light-emitting device 100k.
Structurally, refer again to Figure 15 E, the light-emitting device 100k of the present embodiment includes luminescence unit
110c, reflection protection part 120d, printing opacity glue-line 150c and wavelength convert glue-line 170a.Wavelength convert
Glue-line 170a is arranged on the upper surface 112c of luminescence unit 110c, wherein wavelength convert glue-line 170a
Including low concentration fluorescent adhesive layer 174a and high concentration fluorescent adhesive layer 172a, and high concentration fluorescent adhesive layer 172a
Between low concentration fluorescent adhesive layer 174a and luminescence unit 110c, and the limit of wavelength convert glue-line 170a
Edge 171a extends to outside the side surface 116c of luminescence unit 110c.Herein, low concentration fluorescent adhesive layer 174
Can be used to, as light transmission protective layer, to increase water-gas transfer path, effectively prevent aqueous vapor from penetrating into.Printing opacity glue
Layer 150c is arranged between the side surface 116c of luminescence unit 110c and reflection protection part 120d, in order to
The position of fixing luminescence unit 110c.The reflection protection part 120d of the present embodiment is luminous single along covering
The printing opacity glue-line 150c of side surface 116c of unit 110c and be also coated on the height of wavelength convert glue-line 170a
The both sides of the edge 173a of concentration fluorescent adhesive layer 172a, therefore the light-emitting device 100k of the present embodiment need not
Use existing bearing support to support and fix luminescence unit 110c, and be effectively reduced package thickness with
And cost of manufacture.Simultaneously, it is possible to by have the reflection protection part 120d of high reflectance be effectively improved send out
The forward light extraction efficiency of light unit 110c.Additionally, the wavelength convert glue-line 170a's of the present embodiment is low dense
Degree fluorescent adhesive layer 174a covers an end face 122d of reflection protection part 120d.It is to say, the present embodiment
Edge 173a and the low concentration fluorescent adhesive layer of high concentration fluorescent adhesive layer 172a of wavelength convert glue-line 170a
The edge 171a of 174a does not trim.
In other embodiments, refer to Figure 16 A, the light-emitting device 100m and Figure 14 E of the present embodiment
In light-emitting device 100j similar, be in place of difference: the reflection protection part 120m of the present embodiment is complete
Fill up the gap S between the first electronic pads 113 and the second electronic pads 114 and first electronic pads is completely covered
The one first side surface 113b of 113 and one second side surface 115b of the second electronic pads 115, and reflect guarantor
One bottom surface 124m of guard 120m trims the first bottom surface 113a and second electricity in the first electronic pads 113
Second bottom surface 115a of polar cushion 115.Consequently, it is possible to the bottom of light-emitting device 100m can be avoided to produce
The situation of light leak.Additionally, reflection protection part 120m is coated on the two of wavelength convert glue-line 170a the most completely
Lateral edges.Furthermore, owing to the covering property of reflection protection part 120m is good and has preferably structural strength,
Therefore the light-emitting device 100m of the present embodiment need not use existing bearing support to support and fixing
Light unit 110c, and it is effectively reduced package thickness and cost of manufacture.
Or, refer to Figure 16 B, the luminous dress in the light-emitting device 100n and Figure 16 A of the present embodiment
Put 100k similar, be in place of difference: the reflection protection part 120n of the present embodiment is filled in the first electrode
The pad 113 and second gap S between electronic pads 114 but be not completely filled with, and reflection protection part 120n
Only cover part the first side surface 113b and the part second of the second electronic pads 115 of the first electronic pads 113
Side surface 115b.In other words, the bottom surface 124n of reflection protection part 120n and the first electronic pads 113
Between first bottom surface 113a and the second bottom surface 115a of the second electronic pads 115, there is a height difference H.Or
Person is, refer to Figure 16 C, the light-emitting device 100n in the light-emitting device 100p and Figure 16 B of the present embodiment
Similar, it is in place of difference: in the present embodiment, the first electronic pads 113 ' and the second electronic pads 115 ' are concrete
Turn to more metal layers, formed if any the first metal layer M1 and the second metal level M2, but not with
This is limited.Reflection protection part 120p is completely covered the of the first electronic pads 113 ' and the second electronic pads 115
The side surface of one metal level M1, but first electronic pads 113 ' and second electronic pads 115 ' are not completely covered
The side surface of the second metal level M2.In short, light-emitting device 100m, 100n, 100p's is luminous single
Unit 110c, 110c ' the first electronic pads 113,113 ' can be single with the second electronic pads 115,115 '
Metal level or more metal layers, be not any limitation as with this.
Figure 17 A to Figure 17 E is shown as the manufacture method of a kind of light-emitting device of one embodiment of the invention
Generalized section.About the manufacture method of the light-emitting device of the present embodiment, first, refer to Figure 17 A,
Thering is provided a wavelength convert glue-line 210, wavelength convert glue-line 210 can be simple layer glue-line or multilamellar glue-line,
It is low dense that wavelength convert glue-line 210 in the present embodiment includes that a low concentration fluorescent adhesive layer 212 and is positioned at
High concentration fluorescent adhesive layer 214 on degree fluorescent adhesive layer 212.Herein, wavelength convert glue-line 210 is formed
Step e.g. first passes through mode that admixture mixes with colloid will by fluorescent material (not shown) with silica gel (not
Illustrating) to be layed in one release for the wavelength convert glue material layer (not shown) that in addition uniformly formed after mixing
On film (not shown), stand wavelength convert glue material layer a period of time afterwards, after 24 hours, because of
Form with the density variation of silica gel for fluorescent material that to have a low concentration fluorescent adhesive layer 212 and of separation high
The wavelength convert glue-line 210 of concentration fluorescent adhesive layer 214, its middle and high concentration fluorescent adhesive layer 214 can be deposited in
The lower section of low concentration fluorescent adhesive layer 212, and high concentration fluorescent adhesive layer 214 e.g. yellow, low concentration is glimmering
Light glue-line 212 is the most transparent, and the thickness of low concentration fluorescent adhesive layer 212 is preferably glimmering more than high concentration
The thickness of light glue-line 214, in one embodiment, the ratio of thickness can be between 1 to 200, but not
As limit.
Then, refer again to Figure 17 A, it is provided that a two-sided glued membrane 10a, wavelength convert glue-line 210 low dense
Degree fluorescent adhesive layer 212 is arranged on two-sided glued membrane 10a, turns fixing wavelength by two-sided glued membrane 10a
Change the position of glue-line 210.Then, one first cutting process is carried out, with from high concentration fluorescent adhesive layer 214
It is cut to part low concentration fluorescent adhesive layer 212, and forms multiple groove C1.Herein, each groove C1
The degree of depth be at least the half of thickness of wavelength convert glue-line 210.For example, such as wavelength convert glue-line
The thickness of 210 is 240 microns, the degree of depth of groove C1 the most for example, 200 microns.Now, groove
C1 the low concentration fluorescent adhesive layer 212 of wavelength convert glue-line 210 can be divided into a flat part 212a and
One is positioned at the protuberance 212b on flat part 212a, and high concentration fluorescent adhesive layer 214 is then positioned at protuberance
On 212b.
Then, refer to Figure 17 B, multiple spaced luminescence units 220 are arranged in wavelength convert
On glue-line 210, each of which luminescence unit 220 has upper surface 222 and a following table relative to each other
Face 224, one connects the side surface 226 of upper surface 222 and lower surface 224 and is positioned at lower surface 224
One first upper and separated from one another electronic pads 223 and one second electronic pads 225.Luminescence unit 220 upper
Surface 222 is positioned on the high concentration fluorescent adhesive layer 214 of wavelength convert glue-line 210, to increase light extraction efficiency
And improve light type.Luminescence unit 220 is divided into multiple unit A by groove C1, the most each
Unit A at least includes two luminescence units 220 (schematically illustrate two luminescence units in Figure 17 B
220).Each luminescence unit 220 is e.g. that emission wavelength is between 315 nanometers to 780 nanometers
Light-emitting diode chip for backlight unit, and light-emitting diode chip for backlight unit includes but not limited to ultraviolet light, blue and green light, Huang
Light, Fructus Citri tangerinae light or red light-emitting diode chip.
Then, refer again to Figure 17 B, formed a printing opacity glue-line 230a on wavelength convert glue-line 210 and
Extend and be arranged on the side surface 226 of luminescence unit 220.As seen in this fig. 17b, printing opacity glue-line 230a
From the lower surface 224 of each luminescence unit 220 toward upper surface 222 progressive additive, and printing opacity glue-line 230a
Relative to the side surface 226 of luminescence unit 220, there is a concave surface 232, but be not limited thereto.
Herein, the purpose of printing opacity glue-line 230a is in addition to being the position of fixing luminescence unit 220, because of printing opacity
Glue-line 230a be a light-transmitting materials and refractive index more than 1, the light that the most also can increase chip sides takes out effect
Really.
Then, refer to Figure 17 C, form a reflection protection part 240 and and fill out between luminescence unit 220
Full groove C1, wherein reflection protection part 240 is formed on wavelength convert glue-line 210 and is coated with each unit
A also fills up groove C1.Reflection protection part 240 expose each luminescence unit 220 lower surface 224,
First electronic pads 223 and the second electronic pads 225.Herein, the reflectance of reflection protection part 240 is at least
More than 90%, and a reflection protection part 240 e.g. white adhesive layer.The generation type of reflection protection part 240
E.g. by mode for dispensing glue, wherein reflection protection part 240 directly cover printing opacity glue-line 230a and along
Printing opacity glue-line 230a extends on the edge of high concentration fluorescent adhesive layer 214 and fills up groove C1.This
Time, the first electronic pads 223 of luminescence unit 220 and the second electronic pads 225 are on two-sided glued membrane 10a
Orthographic projection is not overlapped in the reflection protection part 240 orthographic projection on two-sided glued membrane 10a.
Then, refer again to Figure 17 C, carry out one second cutting process, with from reflection protection part 240 edge
Groove C1 and run through low concentration fluorescent adhesive layer 212, and form multiple light-emitting device 200a separated from one another.
Now, as shown in Figure 17 C, the wavelength convert that two luminescence units 220 in each unit A are contacted
Glue-line 210 is continuous print, implies that these luminescence units 220 have same light-emitting area, therefore luminescence unit
220 light sent can carry out leaded light by transparent low concentration fluorescent adhesive layer 212, can make this reality
The light-emitting device 200a executing example has preferably uniformity of luminance.
Afterwards, please also refer to Figure 17 C and Figure 17 D, after carrying out the second cutting process, one need to be carried out
Turn over film program.First, first provide a UV glued membrane 20a in the first electronic pads 223 of luminescence unit 220
With on the second electronic pads 225, first to fix the relative position of these light-emitting devices 200a.Then, remove
Two-sided glued membrane 10a and expose the low concentration fluorescent adhesive layer 212 of wavelength convert glue-line 210.Finally, please join
Examine Figure 17 E, remove UV glued membrane 20a and expose first electronic pads 223 and of luminescence unit 220
Two electronic padses 225.So far, the making of light-emitting device 200a has been completed.It should be noted that, for convenience
For the sake of explanation, Figure 17 E shown schematically only illustrates a light-emitting device 200a.
Structurally, refer again to Figure 17 E, light-emitting device 200a and include multiple luminescence unit 220 (figure
17E schematically illustrates two luminescence units 220), wavelength convert glue-line 210 and a reflection protection
Part 240.Each luminescence unit 220 has a upper surface 222 relative to each other and a lower surface 224,
Connect the side surface 226 of upper surface 222 and lower surface 224 and be positioned on lower surface 224 and divide each other
From one first electronic pads 223 and one second electronic pads 225.Wavelength convert glue-line 210 is arranged in luminescence
On the upper surface 222 of unit 220, and wavelength convert glue-line 210 includes a low concentration fluorescent adhesive layer 212
And a high concentration fluorescent adhesive layer 214.Low concentration fluorescent adhesive layer 212 has a flat part 212a and
The protuberance 212b being positioned on flat part 212a.High concentration fluorescent adhesive layer 214 is arranged in upper surface 222
And between protuberance 212b, its middle and high concentration fluorescent adhesive layer 214 covers protuberance 212b and contact luminescence
The upper surface 222 of unit 220.Luminescence unit 220 is spaced and exposes partial wavelength conversion glue-line
210.Reflection protection part 240 is coated with the side surface 226 of each luminescence unit 220 and covers luminescence unit
The wavelength convert glue-line 210 that 220 are exposed.Reflection protection part 240 exposes each luminescence unit 220
Lower surface the 224, first electronic pads 223 and the second electronic pads 225.The edge of reflection protection part 240
Trim the edge of flat part 212a in low concentration fluorescent adhesive layer 212.
Due to these luminescence units 220 in the light-emitting device 200a of the present embodiment only with a wavelength convert
Glue-line 210 contacts, and implies that these luminescence units 220 have same light-emitting area, and low concentration fluorescent glue
The layer edge of 212 trims with the edge of reflection protection part 240.Therefore, luminescence unit 220 is sent
The light guiding by low concentration fluorescent adhesive layer 212, can make the light-emitting device 200a of the present embodiment to have
Bigger light-emitting area and preferably uniformity of luminance.Additionally, reflection protection part 240 is coated with luminescence unit
The side surface 226 of 220, and reflection protection part 240 exposes the first electronic pads 223 of luminescence unit 220
And second electronic pads 225.Therefore, the light-emitting device 200a of the present embodiment need not use existing holding
Carry support support and fix luminescence unit 220, can effective less package thickness and cost of manufacture, with
Time, it is possible to it is effectively improved the forward light extraction efficiency of luminescence unit 220.
It is noted that the present embodiment does not limit the structure kenel of printing opacity glue-line 230a, although Figure 17 E
Shown printing opacity glue-line 230a is embodied as having indent relative to the side surface 226 of luminescence unit 220
Surface 232.In other words, reflection protection part 240 also comprises a reflecting surface contacted with luminescence unit 220
242, and this reflecting surface 242 is embodied as curved surface.But, in other embodiments, refer to Figure 18 A,
Light-emitting device 200a in light-emitting device 200b and Figure 17 E of the present embodiment is similar, is in place of difference:
Printing opacity glue-line 230b has a convex surface 234 relative to the side surface 226 of each luminescence unit 220,
Can be effectively increased luminescence unit 220 laterally goes out light, and by coordinating the configuration of wavelength convert glue-line 210,
Also the lighting area of light-emitting device 200b can be increased.In other words, the reflecting surface 242a of reflection protection part 240a
It is embodied as curved surface.Or, refer to Figure 18 B, the light-emitting device 200c and Figure 17 E of the present embodiment
In light-emitting device 200a similar, be in place of difference: printing opacity glue-line 230c is luminous single relative to each
The side surface 226 of unit 220 has an inclined surface 236.In other words, the reflection of reflection protection part 240b
Face 242b is embodied as plane.
Should be noted that at this, following embodiment continues to use element numbers and the partial content of previous embodiment,
Wherein using identical label to represent the identical or element of approximation, the explanation of constructed content refers to
Previous embodiment, it is no longer repeated for following embodiment.
Figure 19 A to Figure 19 E is shown as the manufacture method of a kind of light-emitting device of another embodiment of the present invention
Generalized section.The manufacture method of the light-emitting device 200d of the present embodiment and above-mentioned Figure 17 A to Figure 17 E
In light-emitting device 200a manufacture method Main Differences in place of be: refer to Figure 19 A, carrying out
During the first cutting process, also form that multiple to be cut to part low concentration from high concentration fluorescent adhesive layer 214 ' glimmering
Second groove C2 ' of light glue-line 212 '.As shown in Figure 19 A, groove C1 ' and the second groove C2 '
Position in being staggered, the degree of depth of each of which groove C1 ' is at least wavelength convert glue-line 210 '
The half of thickness, and the degree of depth of each second groove C2 ' is identical with the degree of depth of each groove C1 '.Lift
For example, if the thickness of wavelength convert glue-line 210 ' is 240 microns, and the degree of depth of groove C1 ' and
The degree of depth of the second groove C2 ' the most for example, 200 microns, but be not limited thereto.Now, low concentration is glimmering
The flat part 212a ' of light glue-line 212 ' has a thickness T, it is preferred that thickness T is e.g. between 20
Micron is between 50 microns.Second groove C2 ' is by the low concentration fluorescence in wavelength convert glue-line 210 '
The protuberance of glue-line 212 ' is divided into two and is highlighted sub-portion 212b ', and high concentration fluorescent adhesive layer 214 ' position
Highlight on sub-portion 212b ' in these.
Then, refer to Figure 19 B, spaced luminescence unit 220 is arranged in wavelength convert glue-line
Two luminescence units 220 on 210 ', during wherein the second groove C2 ' is positioned at each luminescence unit unit A
Between, and luminescence unit 220 is arranged respectively on prominent sub-portion 212b ', and luminescence unit 220 is upper
Surface 222 directly contacts high concentration fluorescent adhesive layer 214 '.It is preferred that each prominent sub-portion 212b '
Length is more than 1 and less than 1.35 with the ratio of the length of corresponding luminescence unit 220, say, that
The edge of the prominent sub-portion 212b ' of low concentration fluorescent adhesive layer 212 ' outside the edge of luminescence unit 220,
And the edge of high concentration fluorescent adhesive layer 214 ' also extends to, outside the edge of luminescence unit 220, can effectively increase
Add the light-emitting area of luminescence unit 220.Then, a printing opacity glue-line 230a is formed respectively in luminescence unit 220
Side surface 226 on, wherein printing opacity glue-line 230a is only arranged on the side surface 226 of luminescence unit 220
And extending on the high concentration fluorescent adhesive layer 214 ' of wavelength convert glue-line 210 ', it does not extend and is arranged in
On low concentration fluorescent adhesive layer 212 '.
Then, with the step of above-mentioned Figure 17 C, Figure 17 D Yu Figure 17 E, the most first examine Figure 19 C, i.e. formed
Reflection protection part 240 is upper in wavelength convert glue-line 210 ' and is coated with each unit A and fills up groove C1 '
With the second groove C2 ', then, carry out one second cutting process, with from reflection protection part 240 along ditch
Groove C1 ' and run through low concentration fluorescent adhesive layer 212 ', and form multiple light-emitting device 200d separated from one another.
Then, please also refer to Figure 19 C and Figure 19 D, after carrying out the second cutting process, need to carry out turning over film
Program.First, first provide UV glued membrane 20a in the first electronic pads 223 and second of luminescence unit 220
On electronic pads 225, first to fix the relative position of these light-emitting devices 200a.Then, double faced adhesive tape is removed
Film 10a and expose the low concentration fluorescent adhesive layer 212 ' of wavelength convert glue-line 210 '.Finally, refer to
Figure 19 E, removes UV glued membrane 20a and exposes the first electronic pads 223 and second of luminescence unit 220
On electronic pads 225.So far, the making of light-emitting device 200d has been completed.It should be noted that, for convenience
For the sake of explanation, Figure 19 E shown schematically only illustrates a light-emitting device 200d.
Please also refer to Figure 19 E, Figure 20 A and Figure 20 B, wherein it should be noted that, shown by Figure 19 E
Be along the generalized section shown by the line Y-Y in Figure 20 A.The light-emitting device 200d of the present embodiment
Similar to the light-emitting device 200a in Figure 17 E, it is in place of difference: institute between two luminescence units 220
The wavelength convert glue-line 210 ' exposed also has the second groove C2 ', and wherein the second groove C2 ' is from height
Concentration fluorescent adhesive layer 214 ' extends to part low concentration fluorescent adhesive layer 212 '.It is to say, two luminescences
Unit 220 is disposed on a continuous print wavelength convert glue-line 210 ', and therefore luminescence unit 220 has
There is a same light-emitting area, and the edge of the edge of low concentration fluorescent adhesive layer 212 ' and reflection protection part 240
Trim.Therefore, the light that luminescence unit 220 the is sent guiding by low concentration fluorescent adhesive layer 212 ',
It is uniform with preferably luminous that the light-emitting device 200d that can make the present embodiment can have bigger light-emitting area
Property.
Particularly, when carrying out first time cutting process, at direction and the line Y-Y of Figure 20 A center line X-X
The degree of depth cut of direction be substantially the same.It is to say, refer to Figure 20 B, online X-X direction
Profile on, the flat part 212a ' of low concentration fluorescent adhesive layer 212 ' has a thickness T, refer to
Figure 19 E, and on the profile in online Y-Y direction, the flat part 212a ' of low concentration fluorescent adhesive layer 212 '
There is thickness T equally.It is preferred that thickness T is e.g. between 20 microns to 50 microns.
Certainly, in other embodiments, when carrying out cutting process for the first time, in the cutting of different directions
Time, the flat part 212a ' of low concentration fluorescent adhesive layer 212 ' also can have different thickness.Figure 21 A illustrates
Schematic perspective view for a kind of light-emitting device of another embodiment of the present invention.Figure 21 B and Figure 21 C is respectively
It is shown as line the X '-X ' along Figure 21 A and the generalized section of line Y '-Y '.Please also refer to figure
21A, Figure 21 B Yu Figure 21 C, when carrying out first time cutting process, Figure 21 A center line X '-X's '
The degree of depth that direction is cut from the direction of line Y '-Y ' is different, and causes wavelength convert glue-line 210 ' also
Including not by this reflection protection part 240 be coated with one first exposure sidepiece with one second exposure sidepiece, first
Expose sidepiece and the second exposure sidepiece is not parallel, and wavelength convert glue-line 210 ' exposes at sidepiece in first
Thickness be different from wavelength convert glue-line 210 ' and expose the thickness at sidepiece in second.Specifically, low
Concentration fluorescent adhesive layer 212 " flat part 212a " on the direction of line X '-X ', have one first
Thickness T1, and low concentration fluorescent adhesive layer 212 " flat part 212a " in the direction of Y '-Y '
There is on D2 one second thickness T2, and the first thickness T1 is different from the second thickness T2.It is preferred that the
One thickness T1 e.g. between 50 microns to 200 microns, and the second thickness T2 e.g. between
Between 20 microns to 50 microns.
Low concentration fluorescent adhesive layer 212 due to the present embodiment " flat part 212a " in X '-X '
Direction on from be respectively provided with the first different thickness T1 and the second thickness T2 on the direction of Y '-Y ',
Therefore can effectively reduce the situation producing luminance-reduction between adjacent two luminescence units 220 because of blanking bar, enter
And the uniformity of luminance of light-emitting device 200e can be improved.Additionally, it is noted that with line Y '-Y '
Direction illustrate, when low concentration fluorescent adhesive layer 212 " ' flat part 212a " thickness
When T2 is such as improved to 0.2 millimeter (mm) by 0.04 millimeter (mm), the rising angle of luminescence unit 220
Also can be increased to 130 degree by original 120 degree, imply that the rising angle of luminescence unit 220 can increase by 10
Degree.In short, low concentration fluorescent adhesive layer 212 " ' flat part 212a " thickness size with send out
The rising angle of light unit 220 becomes positive correlation.
In sum, owing to the reflection protection part of the present invention is coated with the side surface of luminescence unit, and reflection is protected
The bottom surface of guard exposes first bottom surface and the second of the second electronic pads of the first electronic pads of luminescence unit
Bottom surface.Therefore, the light-emitting device of the present invention not only need not use existing bearing support to support and solid
Determine luminescence unit, and be effectively reduced package thickness and cost of manufacture, simultaneously, it is possible to be effectively improved and send out
The forward light extraction efficiency of light unit.
Additionally, due to these luminescence units in the light-emitting device of the present invention only with a wavelength convert glue-line
Contact, imply that these luminescence units have a same light-emitting area, and the edge of low concentration fluorescent adhesive layer with
The edge of reflection protection part trims.Therefore, the light that luminescence unit is sent is by low concentration fluorescent adhesive layer
Guide, the light-emitting device of the present invention can be made can to have bigger lighting angle and preferably uniformity of luminance.
Additionally, the side surface of reflection protection part cladding luminescence unit and expose the first electronic pads of luminescence unit with
And second electronic pads.Therefore, the light-emitting device of the present invention need not use existing bearing support to support
And fixing luminescence unit, can effective less package thickness and cost of manufacture, simultaneously, it is possible to be effectively improved
The forward light extraction efficiency of luminescence unit.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, rather than right
It limits；Although the present invention being described in detail with reference to foregoing embodiments, this area common
Skilled artisans appreciate that the technical scheme described in foregoing embodiments still can be modified by it,
Or the most some or all of technical characteristic is carried out equivalent；And these amendments or replacement, and
The essence not making appropriate technical solution departs from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a light-emitting device, it is characterised in that including:
One wavelength conversion layer, has a upper surface relative to each other and a lower surface；
At least one luminescence unit, has two electronic padses, and this two electronic pads is positioned at the same of this luminescence unit
Side, wherein this luminescence unit is arranged on this upper surface of this wavelength conversion layer and exposes this two electronic pads；
One reflection protection part, is coated with this luminescence unit and this wavelength conversion layer of part, and at least exposes this
This two electronic pads of luminescence unit and this lower surface of this wavelength conversion layer；And
One photic zone, be arranged on this wavelength conversion layer and be positioned at this luminescence unit and this reflection protection part it
Between.
2. a light-emitting device, it is characterised in that including:
One wavelength conversion layer, has a upper surface relative to each other and a lower surface；
At least one luminescence unit, has two electronic padses, and this two electronic pads is positioned at the same of this luminescence unit
Side, wherein this luminescence unit is arranged on this upper surface of this wavelength conversion layer and exposes this two electronic pads；
And
One reflection protection part, is coated with this luminescence unit and this wavelength conversion layer of part, and at least exposes this
This two electronic pads of luminescence unit and this lower surface of this wavelength conversion layer, wherein this reflection protection part includes
One reflecting surface, one first this luminescence unit of side contacts of this reflecting surface, and one second side is towards this wavelength convert
Layer and the direction away from this luminescence unit extend.
Light-emitting device the most according to claim 1 and 2, it is characterised in that this photic zone also configures that
Between this wavelength conversion layer and this luminescence unit.
Light-emitting device the most according to claim 1 and 2, it is characterised in that this reflection protection part bag
Containing a reflecting surface contacted with this luminescence unit.
Light-emitting device the most according to claim 1 and 2, it is characterised in that this reflection protection part bag
Cover this wavelength conversion layer and expose the surface of this wavelength conversion layer.
Light-emitting device the most according to claim 5, it is characterised in that this wavelength conversion layer is exposed
The one side of this surface and this reflection protection part form a flat side of this light-emitting device.
Light-emitting device the most according to claim 1 and 2, it is characterised in that this reflection protection part exists
A Part I side that the different both sides of this wavelength conversion layer expose respectively and a Part II side,
And the thickness at this Part I side of this wavelength conversion layer is different from this second of this wavelength conversion layer
Divide the thickness at side.
Light-emitting device the most according to claim 1 and 2, it is characterised in that this wavelength conversion layer is also
Including a low concentration fluorescence coating and a high concentration fluorescence coating, it is glimmering that this high concentration fluorescence coating is positioned at this low concentration
Between photosphere and this luminescence unit.
9. the manufacture method of a light-emitting device, it is characterised in that including:
Thering is provided a wavelength conversion layer, wherein this wavelength conversion layer includes single glue-line or includes that a low concentration is glimmering
Photosphere and a high concentration fluorescence coating；
Multiple luminescence units are arranged on this wavelength conversion layer with being spaced, and expose respectively this luminescence
Two electronic padses of unit；
Forming multiple groove on wavelength conversion layer, wherein those grooves are between those luminescence units；
Form a reflection protection part and and fill up those on this wavelength conversion layer and between those luminescence units
Groove, wherein this reflection protection part exposes those electronic padses of those luminescence units, this reflection protection part
Also comprise a reflecting surface contacted with this luminescence unit, and this reflecting surface is a plane or a curved surface；And
A cutting process is carried out, to form multiple light-emitting device along those grooves.
The manufacture method of light-emitting device the most according to claim 9, it is characterised in that also include:
Before forming this reflection protection part, this wavelength conversion layer forms multiple spaced printing opacity
Layer, each photic zone is covered each by this wavelength conversion layer of part and a part of side surface of each luminescence unit.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911019739.6A CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
| US15/268,654 US9997676B2 (en) | 2014-05-14 | 2016-09-19 | Light emitting device and manufacturing method thereof |
| US15/788,757 US10439111B2 (en) | 2014-05-14 | 2017-10-19 | Light emitting device and manufacturing method thereof |
| US16/004,445 US10910523B2 (en) | 2014-05-14 | 2018-06-11 | Light emitting device |
| US16/595,414 US10804444B2 (en) | 2014-05-14 | 2019-10-07 | Light-emitting device and manufacturing method thereof |
| US17/164,725 US20210159369A1 (en) | 2014-05-14 | 2021-02-01 | Light emitting device |
| US17/848,408 US20230006109A1 (en) | 2014-05-14 | 2022-06-24 | Light emitting device and manufacturing method thereof |
Applications Claiming Priority (14)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562157450P | 2015-05-05 | 2015-05-05 | |
| US62/157450 | 2015-05-05 | ||
| US14/711798 | 2015-05-14 | ||
| US14/711,798 US20150333227A1 (en) | 2014-05-14 | 2015-05-14 | Light emitting device package structure and manufacturing method thereof |
| US201562220249P | 2015-09-18 | 2015-09-18 | |
| US62/220249 | 2015-09-18 | ||
| US201562236150P | 2015-10-02 | 2015-10-02 | |
| US62/236150 | 2015-10-02 | ||
| US201562245247P | 2015-10-22 | 2015-10-22 | |
| US62/245247 | 2015-10-22 | ||
| US201562262876P | 2015-12-03 | 2015-12-03 | |
| US62/262876 | 2015-12-03 | ||
| TW105100499 | 2016-01-08 | ||
| TW105100499 | 2016-01-08 |
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|---|---|---|---|
| CN201911019739.6A Division CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
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| CN106129231A true CN106129231A (en) | 2016-11-16 |
| CN106129231B CN106129231B (en) | 2019-11-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911019739.6A Pending CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
| CN201610293182.5A Active CN106129231B (en) | 2014-05-14 | 2016-05-05 | Light emitting device and preparation method thereof |
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| CN201911019739.6A Pending CN110767793A (en) | 2015-05-05 | 2016-05-05 | Light emitting device and method for manufacturing the same |
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| CN108267914A (en) * | 2016-12-30 | 2018-07-10 | 中强光电股份有限公司 | Wavelength converter and its projector |
| WO2018201610A1 (en) * | 2017-05-04 | 2018-11-08 | 深圳市华星光电技术有限公司 | Light conversion film for use in backlight module, backlight module, and display device |
| CN108987556A (en) * | 2017-06-01 | 2018-12-11 | 晶能光电（江西）有限公司 | A kind of white chip |
| CN108987555A (en) * | 2017-06-01 | 2018-12-11 | 晶能光电（江西）有限公司 | A kind of white chip preparation method |
| CN108987549A (en) * | 2017-06-01 | 2018-12-11 | 晶能光电（江西）有限公司 | A kind of white chip preparation method |
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Effective date of registration: 20231218 Address after: Tokushima County, Japan Patentee after: NICHIA Corp. Address before: Tainan, Taiwan, China Science Southern Industrial Park, No. three, Dali Road, No. 5 Patentee before: Genesis Photonics Inc. |