TWI717347B - Manufacturing method of light emitting device - Google Patents

Abstract

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light emitting unit has two electrode pads located on the same side of the light emitting unit. The light emitting unit is disposed on the upper surface of the wavelength conversion layer and exposes the two electrode pads. The reflective protecting element encapsulates at least a portion of the light emitting unit and a portion of the wavelength conversion layer, and exposes the two electrode pads of the light emitting unit.

Description

Manufacturing method of light emitting device

The present invention relates to a light-emitting device and a manufacturing method thereof, and more particularly to a light-emitting device using a light-emitting diode as a light source and a manufacturing method thereof.

Generally speaking, the light-emitting diode package structure usually disposes the light-emitting diode chip on a concave cup-shaped carrier base formed of ceramic or metal material to fix and support the light-emitting diode chip. After that, the encapsulant is used to cover the light-emitting diode chip to complete the manufacture of the light-emitting diode package structure. At this time, the electrode of the light-emitting diode chip is located above the supporting base and in the concave cup. However, the concave-cup type supporting base has a certain thickness, so that the thickness of the light-emitting diode package structure cannot be effectively reduced, so that the light-emitting diode package structure cannot meet the current thinning demand.

The present invention provides a light-emitting device, which does not require the use of conventional bearing supports The frame can have a thinner package thickness and meet the requirements of thinning.

The present invention provides a method for manufacturing a light-emitting device for manufacturing the above-mentioned light-emitting device.

The light-emitting device of the present invention includes a wavelength conversion layer, at least one light-emitting unit and a reflection protection member. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. The light-emitting unit has two electrode pads, and the two electrode pads are located on the same side of the light-emitting unit. The light-emitting unit is arranged on the upper surface of the wavelength conversion layer and the two electrode pads are exposed. The reflective protection member covers at least part of the light-emitting unit and part of the wavelength conversion layer, and exposes the two electrode pads of the light-emitting unit.

In an embodiment of the present invention, the above-mentioned light-emitting device further includes: a light-transmitting layer disposed on the wavelength conversion layer and located between the light-emitting unit and the reflective protection member.

In an embodiment of the present invention, the aforementioned light-transmitting layer is further disposed between the wavelength conversion layer and the light-emitting unit.

In an embodiment of the present invention, the above-mentioned reflective protection member further includes a reflective surface in contact with the light-emitting unit.

In an embodiment of the present invention, the reflective surface of the above-mentioned reflective protection member is a flat surface or a curved surface.

In an embodiment of the present invention, the above-mentioned reflection protection member more completely covers one side of the wavelength conversion layer.

In an embodiment of the present invention, a bottom surface of the above-mentioned reflection protection member and a bottom surface of the wavelength conversion layer form a plane.

In an embodiment of the present invention, the above-mentioned reflective protection member further covers at least Part of one side of the wavelength conversion layer.

In an embodiment of the present invention, the side surface of the part of the wavelength conversion layer that is not covered by the reflection protection member and one side surface of the reflection protection member form a side plane of the light emitting device.

In an embodiment of the present invention, the aforementioned wavelength conversion layer further includes a first exposed side portion and a second exposed side portion that are not covered by the reflective protection member. The first exposed side and the second exposed side are not parallel, and the thickness of the wavelength conversion layer at the first exposed side is different from the thickness of the wavelength conversion layer at the second exposed side.

In an embodiment of the present invention, the aforementioned wavelength conversion layer further includes a low-concentration phosphor layer and a high-concentration phosphor layer, and the high-concentration phosphor layer is located between the low-concentration phosphor layer and the light-emitting unit.

In an embodiment of the present invention, the above-mentioned reflective protection member fills a gap between the two electrode pads.

In an embodiment of the present invention, the above-mentioned reflection protection member completely fills the gap between the two electrode pads and a surface of the reflection protection member is cut to a surface of the two electrode pads.

In an embodiment of the present invention, the aforementioned at least one light-emitting unit is a plurality of light-emitting units, and the wavelength conversion layer has at least one groove located between the two light-emitting units.

The manufacturing method of the light-emitting device of the present invention includes the following steps. A wavelength conversion layer is provided; a plurality of light emitting units arranged at intervals are arranged on the wavelength conversion layer and the two electrode pads of each light emitting unit are exposed; a plurality of grooves are formed on the wavelength conversion layer, wherein the grooves are located in the light emitting unit Between; forming a reflection protection at the wavelength The conversion layer and between the light-emitting units are filled with grooves, wherein the reflective protection member exposes the electrode pads of the light-emitting units; and a cutting process is performed along the grooves to form a plurality of light-emitting devices.

In an embodiment of the present invention, the depth of each of the aforementioned trenches is at least half of the thickness of the wavelength conversion layer.

In an embodiment of the present invention, the manufacturing method of the above-mentioned light-emitting device further includes: after arranging the spaced light-emitting units on the wavelength conversion layer, forming a light-transmitting layer on the wavelength conversion layer.

In an embodiment of the present invention, the above-mentioned method for manufacturing the light-emitting device further includes: before arranging the spaced light-emitting units on the wavelength conversion layer, forming a light-transmitting layer on the wavelength conversion layer.

In an embodiment of the present invention, the above-mentioned reflective protection member further includes a reflective surface in contact with the light-emitting unit.

In an embodiment of the present invention, the reflective surface of the above-mentioned reflective protection member is a flat surface or a curved surface.

In an embodiment of the present invention, the aforementioned wavelength conversion layer further includes a low-concentration phosphor layer and a high-concentration phosphor layer, and the light-emitting unit is disposed on the high-concentration phosphor layer.

Based on the foregoing, the reflective protection member of the present invention covers the side surface of the light emitting unit, and the bottom surface of the reflective protection member is aligned with the first bottom surface of the first electrode pad and the second bottom surface of the second electrode pad of the light emitting unit. Therefore, the light-emitting device of the present invention not only does not need to use the conventional supporting bracket to support and fix the light-emitting unit, but can effectively compare The package thickness and manufacturing cost are reduced, and at the same time, the forward light extraction efficiency of the light emitting unit can be effectively improved.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

10: substrate

10a: Double-sided adhesive film

20: Another substrate

20a: UV film

30: The first release film

40: second release film

100a, 100b, 100c, 100d, 100e, 100f, 100g, 100h, 100i, 100j, 100k, 100m, 100n, 100p, 200a, 200b, 200c, 200d: light emitting device

101: unit

110a, 110b, 110c, 110c’, 220: light-emitting unit

112a, 112b, 112c, 222: upper surface

113, 113’, 223: first electrode pad

113a: first bottom surface

113b: first side surface

114a, 114b, 114c, 224: lower surface

115, 115’, 225: second electrode pad

115a: second bottom surface

115b: second side surface

116a, 116b, 116c: side surface

120, 120’, 120c, 120d, 120m, 120n, 120p, 240, 240a, 240b: reflective protection

121: Edge

122, 122c, 122d: top surface

124, 124m, 124n: bottom surface

130d, 130c: first extension electrode

140d, 140c: second extension electrode

150: Encapsulation adhesive layer

150c, 150c’, 230a, 230b, 230c: transparent adhesive layer

160, 160’: Translucent layer

170, 170’, 170a, 210, 210’: wavelength conversion adhesive layer

171, 171a: side edges

172, 172a, 214, 214’: high concentration fluorescent glue layer

173: top surface

173a: Edge

174, 174a, 212, 212’, 212": low concentration fluorescent glue layer

212a, 212a’, 212a": flat part

212b: protrusion

212b’: Protruding sub-part

226: side surface

232: concave surface

234: convex surface

236: Inclined Surface

242, 242a, 242b: reflective surface

A: Unit

C: groove

C1, C1’: groove

C2’: Second groove

D: depth

E: Extension electrode layer

G: Spacing

H: height difference

L: cutting line

M1: The first metal layer

M2: second metal layer

S: gap

T: thickness

T1: first thickness

T2: second thickness

W: width

X-X, X’-X’, Y-Y, Y’-Y’: Line

FIG. 1 is a schematic diagram of a light-emitting device according to an embodiment of the invention.

FIG. 2 is a schematic diagram of a light emitting device according to another embodiment of the invention.

FIG. 3 is a schematic diagram of a light-emitting device according to another embodiment of the invention.

FIG. 4 is a schematic diagram of a light-emitting device according to another embodiment of the invention.

FIG. 5 is a schematic diagram of a light emitting device according to another embodiment of the invention.

FIG. 6 is a schematic diagram of a light-emitting device according to another embodiment of the invention.

FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the invention.

FIG. 8 is a schematic diagram of a light-emitting device according to another embodiment of the invention.

FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the invention.

10A to 10D are schematic cross-sectional views of a method of manufacturing a light-emitting device according to an embodiment of the invention.

11A to 11C are schematic cross-sectional views showing partial steps of a method of manufacturing a light-emitting device according to another embodiment of the present invention.

12A to 12E are schematic cross-sectional diagrams of a method of manufacturing a light-emitting device according to another embodiment of the invention.

13A to 13D are schematic cross-sectional views showing partial steps of a method of manufacturing a light-emitting device according to another embodiment of the invention.

14A to 14E are schematic cross-sectional views showing a method of manufacturing a light-emitting device according to another embodiment of the invention.

15A to 15E are schematic cross-sectional diagrams of a manufacturing method of a light emitting device according to another embodiment of the invention.

16A to 16C are schematic cross-sectional views of light emitting devices according to various embodiments of the invention.

17A to 17E are schematic cross-sectional views of a manufacturing method of a light-emitting device according to an embodiment of the invention.

18A and 18B are schematic cross-sectional views of two types of light-emitting devices according to two embodiments of the invention.

19A to 19E are schematic cross-sectional diagrams of a method of manufacturing a light-emitting device according to another embodiment of the invention.

FIG. 20A is a three-dimensional schematic diagram of the light-emitting device of FIG. 19E.

Fig. 20B is a schematic cross-sectional view taken along the line X-X of Fig. 20A.

FIG. 21A is a three-dimensional schematic diagram of a light emitting device according to another embodiment of the invention.

21B and 21C are respectively schematic cross-sectional views taken along the line X'-X' and the line Y'-Y' of FIG. 21A.

FIG. 1 is a schematic diagram of a light-emitting device according to an embodiment of the invention. Please refer to FIG. 1 first. In this embodiment, the light-emitting device 100a includes a light-emitting unit 110a and a reflective protection member 120. The light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, a side surface 116a connecting the upper surface 112a and the lower surface 114a, and a first electrode pad 113 and a second electrode on the lower surface 114a and separated from each other. Pad 115. The reflective protector 120 covers the side surface 116a of the light-emitting unit 110a and exposes at least part of the upper surface 112a and at least part of the first bottom surface 113a of the first electrode pad 113 and at least part of the second bottom surface of the second electrode pad 115 115a.

More specifically, as shown in FIG. 1, the upper surface 112a of the light-emitting unit 110a of the present embodiment is aligned with a top surface 122 of the reflective protective member 120, and a bottom surface 124 of the reflective protective member 120 is aligned with the first electrode pad 113 A first bottom surface 113a and a second bottom surface 115a of the second electrode pad 115 are aligned, and the reflective protection member 120 can cover or expose the light-emitting unit 110a located between the first electrode pad 113 and the second electrode pad 115 Surface 114a. In this embodiment, the side surface 116a of the light-emitting unit 110a is perpendicular to the upper surface 112a and the lower surface 114a, but it is not limited to this. The light-emitting unit 110a is, for example, a light-emitting diode. Including but not limited to) between 315 nanometers and 780 nanometers, the light emitting diodes include but not limited to ultraviolet light, blue light, green light, yellow light, orange light or red light emitting diodes.

The reflectivity of the reflective protective member 120 is at least greater than 90%, that is, the reflective protective member 120 of the present embodiment has the characteristic of high reflectivity, wherein the material of the reflective protective member 120 includes a polymer material doped with highly reflective particles The highly reflective particles are, for example, but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is, for example, not limited to epoxy resin or silicon resin. In addition, the material of the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a of this embodiment is a metal material or metal alloy, such as gold, aluminum, tin, silver, bismuth, indium or a combination thereof, but not Limit this.

In this embodiment, the reflective protector 120 covers the side surface 116a of the light-emitting unit 110a, and exposes the first bottom surface 113a of the first electrode pad 113 of the light-emitting unit 110a and the second bottom surface 115a of the second electrode pad 115 to emit light. The device 100a does not need to use a conventional supporting bracket to support and fix the light-emitting unit 110a, and can effectively reduce the package thickness and manufacturing cost. At the same time, it can also effectively improve the normality of the light-emitting unit 110a through the reflective protector 120 with high reflectivity. To the light efficiency.

It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same reference numbers are used to represent the same or similar components, and the description of the same technical content can refer to the previous embodiments. The following embodiments Do not repeat it again.

FIG. 2 is a schematic diagram of a light emitting device according to another embodiment of the invention. 1 and 2 at the same time, the main difference between the light-emitting device 100b of this embodiment and the light-emitting device 100a in FIG. 1 is that the side surface 116b of the light-emitting unit 110b of this embodiment is not perpendicular to the upper surface 112b and the lower surface. For the surface 114b, the surface area of the upper surface 112b of the light emitting unit 100b in this embodiment is larger than the surface area of the lower surface 114b, and the angle between the side surface 116b and the lower surface 114b is, for example, between 95 degrees and 150 degrees. The upper surface 112b, the side surface 116b and the side surface 116b of the light-emitting unit 110b of this embodiment The outer contour defined by the lower surface 114b presents an inverted trapezoid shape, so that the lateral light emission of the light-emitting unit 110b can be reduced, and the reflective protection member 120 with high reflectivity can further effectively improve the forward light emission efficiency of the light-emitting unit 110b.

FIG. 3 is a schematic diagram of a light-emitting device according to another embodiment of the invention. 1 and 3 at the same time, the main difference between the light-emitting device 100c of this embodiment and the light-emitting device 100a in FIG. 1 is: the light-emitting device 100c of this embodiment further includes a first extension electrode 130c and a second Extension electrode 140c. The first extension electrode 130 c is disposed on the bottom surface 124 of the reflective protection member 120 and is electrically connected to the first electrode pad 113. The second extension electrode 140 c is disposed on the bottom surface 124 of the reflective protection member 120 and is electrically connected to the second electrode pad 115. The first extension electrode 130c and the second extension electrode 140c are separated from each other and cover at least a part of the bottom surface 124 of the reflection protector 120.

As shown in FIG. 3, the arrangement of the first extension electrode 130 c and the second extension electrode 140 c of this embodiment completely overlaps the first electrode pad 113 and the second electrode pad 115, and extends toward the edge of the reflection protector 120. Of course, in other unillustrated embodiments, the arrangement of the first extension electrode and the second extension electrode can also partially overlap the first electrode pad and the second electrode pad, as long as the first extension electrode and the second extension electrode are electrically connected The settings connected to the first electrode pad and the second electrode pad are within the scope of this embodiment. In addition, the first extension electrode 130c and the second extension electrode 140c of this embodiment expose a part of the bottom surface 124 of the reflective protection member 120.

In this embodiment, the materials of the first extension electrode 130c and the second extension electrode 140c may be the same or different from the first electrode pad 113 and the second electrode pad 113 of the light-emitting unit 110a. Two electrode pad 115. When the materials of the first extension electrode 130c and the second extension electrode 140c are the same as the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a, there may be no gap between the first extension electrode 130c and the first electrode pad 113. The seam connection is an integrally formed structure, and the second extension electrode 140c and the second electrode pad 115 may be seamlessly connected, that is, an integrally formed structure. When the materials of the first extension electrode 130c and the second extension electrode 140c are different from the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a, the material of the first extension electrode 130c and the second extension electrode 140c may be, for example, Silver, gold, bismuth, tin, indium, or alloys of combinations of these materials.

Since the light-emitting device 100c of this embodiment has the first extension electrode 130c and the second extension electrode 140c electrically connected to the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110a, respectively, the light-emitting device 100c can be effectively increased The electrode contact area facilitates subsequent assembly of the light-emitting device 100c with other external circuits, which can effectively improve the alignment accuracy and assembly efficiency. For example, the area of the first extension electrode 130c is larger than the area of the first electrode pad 113, and the area of the second extension electrode 140c is larger than the area of the second electrode pad 115.

FIG. 4 is a schematic diagram of a light-emitting device according to another embodiment of the invention. 3 and 4 at the same time, the main difference between the light-emitting device 100d in this embodiment and the light-emitting device 100c in FIG. 3 is: the edge of the first extension electrode 130d and the edge of the second extension electrode 140d in this embodiment It is aligned with the edge of the reflection protector 120.

FIG. 5 is a schematic diagram of a light-emitting device according to another embodiment of the invention. 1 and 5 at the same time, the main difference between the light-emitting device 100e of this embodiment and the light-emitting device 100a in FIG. 1 is that the light-emitting device 100e of this embodiment further includes an encapsulation adhesive layer 150, wherein the encapsulation adhesive layer 150 is disposed on the upper surface 112a of the light-emitting unit 110a to increase the light extraction rate and improve the light type. The encapsulant layer 150 can also extend to at least a part of the upper surface 122 of the reflective protector 120, and the edge of the encapsulant layer 150 can also be aligned with the edge of the reflective protector 120. In addition, the encapsulant layer 150 may also be doped with at least one wavelength conversion material. The wavelength conversion material is used to convert at least part of the wavelength of the light emitted by the light-emitting unit 110a into other wavelengths, and the material of the wavelength conversion material includes fluorescent light. Materials, phosphorescent materials, dyes, quantum dot materials and combinations thereof, wherein the particle size of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 can also be doped with oxides with high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase the light extraction efficiency.

In an embodiment of the present invention, the light emitting unit includes but not limited to ultraviolet light, blue light, green light, yellow light, orange light or red light emitting unit, and the wavelength conversion material includes but not limited to red, orange, orange, and yellow. , Yellow-green or green wavelength conversion materials or a combination thereof, used to perform wavelength conversion of part or all of the light emitted by the light-emitting unit. After the wavelength-converted light and the wavelength-unconverted light are mixed, the light-emitting device emits light with a dominant wavelenghth in a specific range. The light color includes, but is not limited to, red, orange, orange, and amber. , Yellow, yellow-green or green, or emit white light with a specific relative color temperature. The range of the relative color temperature is, for example, between 2500K and 7000K, but it is not limited thereto.

FIG. 6 is a schematic diagram of a light-emitting device according to another embodiment of the invention. 6 and 4 at the same time, the main difference between the light-emitting device 100f of this embodiment and the light-emitting device 100d in FIG. 4 is: the light-emitting device 100f of this embodiment further includes an encapsulation layer 150, wherein 150 is disposed on the upper surface 112a of the light-emitting unit 110a to increase the light extraction rate and improve the light type. The encapsulant layer 150 can also extend to at least part of the upper surface 122 of the reflective protector 120, and the edge of the encapsulant layer 150 can also be cut to the edge of the reflective protector 120. In addition, the encapsulant layer 150 can also be doped with At least one wavelength conversion material, the wavelength conversion material is used to convert at least part of the wavelength of the light emitted by the light-emitting unit 110a into other wavelengths, and the material of the wavelength conversion material includes fluorescent materials, phosphorescent materials, dyes, quantum dot materials and the like The combination, wherein the particle size of the wavelength conversion material is, for example, between 3 microns and 50 microns. In addition, the encapsulant layer 150 can also be doped with oxides with high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase the light extraction efficiency.

It should be noted that in the embodiment of FIGS. 4 and 6, the edge of the first extension electrode 130d and the edge of the second extension electrode 140d are aligned with the edge of the reflective protection member 120. This design can not only expand the contact of the electrode During the manufacturing process, the reflective protector 120 can simultaneously encapsulate a plurality of spaced light-emitting units 110a, and then form a patterned metal layer to form the first extension electrode 130d and the second extension electrode 140d, and then perform cutting to make The edge of the first extension electrode 130d and the edge of the second extension electrode 140d of each light-emitting device 100f are aligned with the edge of the reflective protection member 120, which can effectively save process time.

FIG. 7 is a schematic diagram of a light emitting device according to another embodiment of the invention. Please Referring to FIGS. 7 and 5, the main difference between the light-emitting device 100g of this embodiment and the light-emitting device 100e in FIG. 5 is that the light-emitting device 100g of this embodiment further includes a light-transmitting layer 160 disposed on the encapsulant layer. 150, where the light transmittance of the light-transmitting layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic or silicone, etc. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the light-emitting device 100g The luminous flux and light extraction rate can also effectively protect the light-emitting unit 110a from being attacked by external moisture and oxygen.

FIG. 8 is a schematic diagram of a light-emitting device according to another embodiment of the invention. 8 and 7 at the same time, the main difference between the light-emitting device 100h in this embodiment and the light-emitting device 100g in FIG. 7 is that the light-transmitting layer 160' of the light-emitting device 100h in this embodiment is disposed on the light-emitting unit 110a Between the upper surface 110a and the packaging adhesive layer 150.

FIG. 9 is a schematic diagram of a light emitting device according to another embodiment of the invention. 9 and FIG. 6 at the same time, the main difference between the light-emitting device 100i of this embodiment and the light-emitting device 100f in FIG. 6 is: the light-emitting device 100i of this embodiment further includes a light-transmitting layer 160 disposed on the encapsulant On the layer 150, the light transmittance of the transparent layer 160 is, for example, greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic or silicone, etc. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the light-emitting device 100i. The luminous flux and light extraction rate can also effectively protect the light-emitting unit 110a from being attacked by external moisture and oxygen.

The following will take the light-emitting devices 100a, 100g, 100d, and 100i in FIG. 1, FIG. 7, FIG. 4, and FIG. 9 as examples, and cooperate with 10A to 10D, 11A to 11C, 12A to 12E, and 13A, respectively. To FIG. 13D, the manufacturing method of the light-emitting device of the present invention will be described in detail.

10A to 10D are schematic cross-sectional diagrams of a method of manufacturing a light-emitting device according to an embodiment of the invention. First, referring to FIG. 10A, a plurality of light emitting units 110a are disposed on a substrate 10, wherein each light emitting unit 110a has an upper surface 112a and a lower surface 114a opposite to each other, and a side surface 116a connecting the upper surface 112a and the lower surface 114a. And a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114a and separated from each other. The first electrode pad 113 and the second electrode pad 115 of each light-emitting unit 110 a are disposed on the substrate 10. In other words, the light-emitting surface of the light-emitting unit 110a, that is, the upper surface 112a, is relatively far away from the substrate 10. In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic, or other non-conductive materials. The light emitting unit 110a is, for example, a light emitting diode. The light emitting wavelength of the light emitting diode (including but not limited to) is between 315 nm and 780 nm. The light emitting diode includes but not limited to ultraviolet light, blue light, and green light. , Yellow, orange or red light-emitting diodes.

Next, referring to FIG. 10B, a reflective protective member 120' is formed on the substrate 10, wherein the reflective protective member 120' covers each light-emitting unit 110a. That is, the reflective protector 120 ′ completely and directly covers the upper surface 112 a, the lower surface 114 a and the side surface 116 a of the light emitting unit 110 a, and fills the gap between the first electrode pad 113 and the second electrode pad 115. Here, the reflectivity of the reflective protective member 120' is at least greater than 90%, that is, the reflective protective member 120' of this embodiment can have high reflectance characteristics, wherein the material of the reflective protective member 120' includes a high doped The polymer material of the reflective particles, the highly reflective particles are, for example, but not limited to, titanium dioxide (TiO ₂ ) powder, and the polymer material is, for example, not limited to epoxy resin or silicon resin.

Next, referring to FIG. 10C, a part of the reflective protective member 120' is removed to form a reflective protective member 120, wherein the reflective protective member 120 exposes at least a part of the upper surface 112a of each light-emitting unit 110a. At this time, the upper surface 112a of each light-emitting unit 110a may be aligned with the reflective protection The top surface 122 of the piece 120. Here, the method of removing part of the reflective protection member 120' includes, for example, a grinding method or a polishing method.

10D, a cutting process is performed to cut the reflective protection member 120 along the cutting line L to form a plurality of light emitting devices 100a separated from each other, wherein each light emitting device 100a has at least one light emitting unit 110a and a reflective The protective member 120, the reflective protective member 120 covers the side surface 116a of the light-emitting unit 110a and exposes at least part of the upper surface 112a thereof.

Finally, referring to FIG. 10D again, the substrate 10 is removed to expose the bottom surface 124 of the reflective protector 120 of each light-emitting device 100a, and expose at least part of the first bottom surface 113a of the first electrode pad 113 of each light-emitting device 100a And at least part of the second bottom surface 115a of the second electrode pad 115.

11A to 11C are schematic cross-sectional views showing partial steps of a method of manufacturing a light-emitting device according to another embodiment of the invention. The main difference between the manufacturing method of the light-emitting device of this embodiment and the manufacturing method of the light-emitting device in FIG. 10A to FIG. 10D is that: between the steps of FIG. 10C and FIG. 10D, it means that part of the reflective protection member is removed. After 120' and before performing the cutting process, please refer to FIG. 11A to form an encapsulant layer 150 on the light emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light profile. Here, the encapsulant layer 150 covers the upper surface 112a of the light-emitting unit 110a and the top surface 122 of the reflective protector 120, and the encapsulant layer 150 may also be doped with at least one wavelength conversion material. Please refer to the foregoing embodiment for the description of the wavelength conversion material. In addition, the encapsulant layer 150 can also be doped with oxides with high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase the light extraction efficiency.

Next, referring to FIG. 11B, a light-transmitting layer 160 is formed on the light-emitting unit 110a and the reflective protection member 120, wherein the light-transmitting layer 160 is located on the encapsulation layer 150 and covers the encapsulation layer 150. For example, the light transmittance of the light transmitting layer 160 is greater than 50%. In this embodiment, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic or silicone, etc. The purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the subsequent formation. The luminous flux and light extraction rate of the light-emitting unit light-sealing structure 100g can also effectively protect the light-emitting unit 110a from being attacked by external moisture and oxygen.

After that, referring to FIG. 11C, a cutting process is performed to cut the light-transmitting layer 160, the encapsulant layer 150, and the reflective protection member 120 along the cutting line L to form a plurality of light-emitting devices 100g separated from each other. Finally, referring to FIG. 11C again, the substrate 10 is removed to expose the bottom surface 124 of the reflective protective member 120 of each light-emitting device 100g, wherein the bottom surface 124 of the reflective protective member 120 of each light-emitting device 100g exposes the first electrode pad 113 At least part of the first bottom surface 113a and at least part of the second bottom surface 115a of the second electrode pad 115. In another embodiment of the present invention, the substrate 10 can also be removed first and then a cutting process is performed.

12A to 12E are schematic cross-sectional diagrams of a method of manufacturing a light-emitting device according to another embodiment of the invention. Please refer to FIG. 12A first. The main difference between the manufacturing method of the light-emitting device in this embodiment and the manufacturing method of the light-emitting device in FIGS. 10A to 10D is: please refer to FIG. 12A, the light-emitting unit 110a of this embodiment is not The first electrode pad 113 and the second electrode pad 115 contact the substrate 10, but the upper surface 112a contacts the substrate 10.

Next, referring to FIG. 12B, a reflective protective member 120' is formed on the substrate, wherein the reflective protective member covers each light-emitting unit 110a.

Next, referring to FIG. 12C, a part of the reflective protective member 120' is removed to form a reflective protective member 120, wherein the reflective protective member 120 exposes at least a portion of the first bottom surface 113a and the first bottom surface 113a of the first electrode pad 113 of each light-emitting unit 110a At least part of the second bottom surface of the second electrode pad 115 115a.

Next, referring to FIG. 12D, a patterned metal layer is formed as the extended electrode layer E, which is located on the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115 of each light-emitting unit 110a. Here, the method of forming the patterned metal layer is, for example, an evaporation method, a sputtering method, an electroplating method or an electroless plating method, and a photomask etching method.

Next, referring to FIG. 12E, a cutting process is performed to cut the extended electrode layer E and the reflective protection member 120 along the cutting line to form a plurality of light-emitting devices 100d separated from each other. Each light-emitting device 100d has at least one light-emitting unit 110a, a reflective protector 120 covering at least the side surface 116a of the light-emitting unit 110a, a first extension electrode 130d directly contacting the first electrode pad 113, and a second electrode pad 115 directly contacting The second extension electrode 140d. The first extension electrode 130 d and the second extension electrode 140 d are separated from each other and expose at least a part of the bottom surface 124 of the reflective protector 120. At this time, the area of the first extension electrode 130d may be greater than the area of the first electrode pad 113, and the area of the second extension electrode 140d may be greater than the area of the second electrode pad 115. The edge of the first extension electrode 130d and the edge of the second extension electrode 140d are aligned with the edge of the reflection protector 120.

Finally, referring to FIG. 12E again, the substrate 10 is removed to expose the top surface 122 of the reflection protection member 120 of each light-emitting device 100d and the upper surface 112a of the light-emitting unit 110a, wherein the reflection protection member 120 of each light-emitting device 100g The top surface 122 is aligned with the top surface 112a of the light emitting unit 110a. In another embodiment of the present invention, the substrate 10 can also be removed first and then a cutting process is performed.

13A to 13D are schematic cross-sectional views showing partial steps of a method of manufacturing a light-emitting device according to another embodiment of the invention. The main difference between the method of manufacturing the light-emitting device of this embodiment and the method of manufacturing the light-emitting device in FIG. 12A to FIG. 12E is: between the steps of FIG. 12D and FIG. 12E, that is, after forming the extended electrode layer E , And in the cutting process Before, referring to FIG. 13A, another substrate 20 is provided and disposed on the extended electrode layer E. Here, the material of the other substrate 20 is, for example, stainless steel, ceramic, or other non-conductive materials. Next, referring to FIG. 13A, after another substrate 20 is provided, the substrate 10 is removed to expose the top surface 122 of the reflective protector 120 and the top surface 112a of the light-emitting unit 110a, wherein the top surface 112a of each light-emitting unit 110a It is aligned with the top surface 122 of the reflection protector 120.

Next, referring to FIG. 13B, an encapsulant layer 150 is formed on the light-emitting unit 110a and the reflective protection member 120 to increase the light extraction rate and improve the light type. Here, the encapsulant layer 150 covers the upper surface 112a of the light-emitting unit 110a and the top surface 122 of the reflective protector 120, and the encapsulant layer 150 may also be doped with at least one wavelength conversion material. Please refer to the foregoing embodiment for the description of the wavelength conversion material. In addition, the encapsulant layer 150 can also be doped with oxides with high scattering ability, such as titanium dioxide (TiO ₂ ) or silicon dioxide (SiO ₂ ), to increase the light extraction efficiency.

Next, referring to FIG. 13C, a light-transmitting layer 160 is formed on the light-emitting unit 110a and the reflective protection member 120, wherein the light-transmitting layer 160 is located on the encapsulation layer 150 and covers the encapsulation layer 150. For example, the light transmittance of the light transmitting layer 160 is greater than 50%. Here, the material of the light-transmitting layer 160 is, for example, glass, ceramic, resin, acrylic or silicone, etc., and its purpose is to guide the light generated by the light-emitting unit 110a to the outside, which can effectively increase the light-emitting unit encapsulation formed subsequently The luminous flux and light extraction rate of the light structure 100i can also effectively protect the light-emitting unit 110a from external moisture and oxygen.

Afterwards, referring to FIG. 13D, a cutting process is performed to cut the light-transmitting layer 160, the encapsulation layer 150, the reflective protection member 120, and the extended electrode layer E along the cutting line L to form a plurality of light-emitting devices 100i separated from each other. Finally, referring to FIG. 13D again, the other substrate 20 is removed to expose the first extension electrode 130d and the second extension electrode 140d of each light emitting device 100i. In this hair In another embodiment, it is also possible to remove the substrate 20 before performing a cutting process.

14A to 14E are schematic cross-sectional views showing a method of manufacturing a light-emitting device according to another embodiment of the invention. Please refer to FIG. 14A first. A wavelength conversion adhesive layer 170 is provided. The wavelength conversion adhesive layer 170 includes a low-concentration phosphor layer 174 and a high-concentration phosphor layer 172 on the low-concentration phosphor layer 174. Here, the step of forming the wavelength conversion adhesive layer 170 is, for example, first through the mixing of dopants and colloids (that is, the liquid or molten colloid is uniformly mixed with the wavelength conversion material. The wavelength conversion material is, for example, phosphor, but not (Not limited), to form the wavelength conversion adhesive layer 170, and then let the wavelength conversion adhesive layer 170 stand for a period of time, such as 24 hours of sedimentation, to form a high-concentration phosphor layer 172 and a low-concentration phosphor layer separated from the upper and lower layers 174. That is to say, the wavelength conversion layer 170 of this embodiment is illustrated with two adhesive layers as an example. Of course, in other embodiments, please refer to FIG. 14A' to provide a wavelength conversion adhesive layer 170', wherein the wavelength conversion adhesive layer 170' is a single adhesive layer, which still falls within the scope of the present invention.

Next, referring to FIG. 14B, a plurality of light-emitting units 110c arranged at intervals are disposed on the wavelength conversion adhesive layer 170, wherein each light-emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c and The side surface 116c of the lower surface 114c and a first electrode pad 113 and a second electrode pad 115 located on the lower surface 114c and separated from each other, and the upper surface 112c of the light-emitting unit 110c is located on the high-concentration phosphor of the wavelength conversion glue layer 170 On the glue layer 172. Next, a plurality of light-transmitting adhesive layers 150c including light-transmitting colloids are formed on the wavelength conversion adhesive layer 170 and extended to the side surface 116c of the light-emitting unit 110c, wherein the light-transmitting adhesive layer 150c It does not completely cover the side surface 116c of the light-emitting unit 110c, but as shown in FIG. 14B, the light-transmitting adhesive layer 150c has a slope of curvature, and the closer to the upper surface 112c of the light-emitting unit 110c, that is, the wavelength conversion adhesive layer 170, The thickness of the photoresist layer 150c is thicker. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

It should be noted that, in other embodiments, please refer to FIG. 14B'. Before arranging the spaced light emitting units 110c on the wavelength conversion adhesive layer 170, an uncured light-transmitting material including a light-transmitting colloid can also be formed. The glue layer 150c' is on the wavelength conversion glue layer 170. After the light-emitting units 110c are arranged on the wavelength conversion adhesive layer 170 at intervals, the light-transmitting adhesive layer 150c' can be extended and arranged between the light-emitting units 110c and the high-concentration phosphor layer 172.

Next, referring to FIGS. 14B and 14C at the same time, after the light-transmitting layer 150c' is cured, a first cutting process is performed to cut the wavelength conversion adhesive layer 170 to form a plurality of separate units 101, each of which is 101 Each has at least one light-emitting unit 110c and a wavelength conversion adhesive layer 170 disposed on the upper surface 112c of the light-emitting unit 110c, and the two side edges 171 of the wavelength conversion adhesive layer 170 of each unit 101 extend to the side surface 116c of the light-emitting unit 110c outer. Next, referring to FIG. 14C again, the cells 101 arranged at intervals are arranged on a substrate 10. In this embodiment, the material of the substrate 10 is, for example, stainless steel, ceramic or other non-conductive materials, which is not limited herein.

After that, referring to FIG. 14D, a reflective protection member 120 c is formed on the substrate 10 and covers the side surface 116 c of the light emitting unit 110 c of each unit 101 and the edge 171 of the wavelength conversion adhesive layer 170. Here, the formation method of the reflection protection member 120c is for example It is formed through glue dispensing, in which the reflective protector 120c directly covers the transparent glue layer 150c and extends along the transparent glue layer 150c to cover the edge 171 of the wavelength conversion glue layer 170. The orthographic projection of the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110c on the substrate 10 does not overlap the orthographic projection of the reflective protector 120c on the substrate 10. Here, the reflection protection member 120c is, for example, a white glue layer.

Finally, please refer to FIGS. 14D and 14E at the same time to perform a second cutting process to cut the reflective protection member 120c and remove the substrate 10 to form a plurality of light emitting devices 100j separated from each other. Each light-emitting device 100j has at least one light-emitting unit 101 and a reflective protective member 120c covering the side surface 116c of the light-emitting unit 110c and the edge 171 of the wavelength conversion adhesive layer 170, respectively. After the substrate 10 is removed, a top surface 122c of the reflective protection member 120c of each light-emitting device 100j and a top surface 173 of the wavelength conversion adhesive layer 170 are exposed. In another embodiment of the present invention, the substrate 10 can also be removed first and then a cutting process is performed. So far, the manufacture of the light-emitting device 100j has been completed.

In terms of structure, please refer to FIG. 14E again. The light-emitting device 100j of this embodiment includes a light-emitting unit 110c, a reflective protection member 120c, a transparent adhesive layer 150c, and a wavelength conversion adhesive layer 170. The wavelength conversion adhesive layer 170 is disposed on the upper surface 112c of the light-emitting unit 110c. The wavelength conversion adhesive layer 170 includes a low-concentration phosphor layer 174 and a high-concentration phosphor layer 172, and the high-concentration phosphor layer 172 is located at a low concentration. Between the fluorescent glue layer 174 and the light emitting unit 110c, and the edge 171 of the wavelength conversion glue layer 170 extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent glue layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor infiltration. The light-transmitting adhesive layer 150c is disposed on the side surface 116c of the light-emitting unit 110c and the reflective protection member Between 120c is used to fix the position of the light-emitting unit 110c. The reflective protection member 120c of this embodiment is along the light-transmitting adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c and is further covered on the edge 171 of the wavelength conversion adhesive layer 170, so the light-emitting device 100j of this embodiment does not need to be used The conventional supporting bracket supports and fixes the light-emitting unit 110c, which can effectively reduce the package thickness and manufacturing cost. At the same time, the reflective protection member 120c with high reflectivity can also effectively improve the forward light extraction efficiency of the light-emitting unit 110c. Here, the top surface 122c of the reflective protection member 120c is embodied to be aligned with the top surface 173 of the wavelength conversion adhesive layer 170.

15A to 15E are schematic cross-sectional diagrams of a manufacturing method of a light emitting device according to another embodiment of the invention. Please refer to FIG. 15A first, a first release film 30 is provided, and then, a wavelength conversion adhesive layer 170a is provided on the first release film 30. The wavelength conversion adhesive layer 170a can be a single layer or multiple layers In this embodiment, the wavelength conversion adhesive layer 170a includes a low-concentration phosphor layer 174a and a high-concentration phosphor layer 172a on the low-concentration phosphor layer 174a. Here, the step of forming the wavelength conversion adhesive layer 170a is, for example, to form the wavelength conversion adhesive layer 170a by mixing dopants and colloids first, and then let the wavelength conversion adhesive layer 170a stand for a period of time, such as 24 hours later, to form a separate low Concentration fluorescent glue layer 172a and high-concentration fluorescent glue layer 174a. Here, the first release film 30 is, for example, a double-sided adhesive film.

Next, referring to FIG. 15A again, a plurality of light-emitting units 110c arranged at intervals are disposed on the wavelength conversion adhesive layer 170A, wherein each light-emitting unit 110c has an upper surface 112c and a lower surface 114c opposite to each other, and a connecting upper surface 112c And the side surface 116c of the lower surface 114c and the one located on the lower surface 114c and separated from each other The first electrode pad 113 and a second electrode pad 115, and the upper surface 112c of the light emitting unit 110c is located on the high-concentration phosphor layer 172a of the wavelength conversion adhesive layer 170a. Here, two adjacent light emitting units 110c have a gap G, and the gap G is, for example, 700 microns. Then, a plurality of light-transmitting adhesive layers 150c are respectively formed on the side surface 116c of the light-emitting unit 110c. The light-transmitting adhesive layer 150c does not completely cover the side surface 116c of the light-emitting unit 110c, but as shown in FIG. The adhesive layer 150c has a slope of curvature, and the closer to the upper surface 112c of the light-emitting unit 110c, the thicker the thickness of the transparent adhesive layer 150c. Here, the purpose of the transparent adhesive layer 150c is to fix the position of the light emitting unit 110c.

Next, referring to FIG. 15B, a first cutting process is performed to cut the high-concentration phosphor layer 172a and part of the low-concentration phosphor layer 174a to form a plurality of grooves C. As shown in FIG. 15B, the first cutting process does not completely cut off the wavelength conversion adhesive layer 170a, but only cuts off the high-concentration phosphor layer 172a and cuts part of the low-concentration phosphor layer 174a. Here, the width W of the trench C is, for example, 400 microns, and the depth D of the trench C is, for example, half of the thickness T of the wavelength conversion adhesive layer 170a. The thickness T of the wavelength conversion adhesive layer 170a is, for example, 140 microns, and the depth D of the trench C is, for example, 70 microns. At this time, the position of the trench C and the position of the encapsulant layer 150c do not interfere with each other.

Afterwards, referring to FIG. 15C, a reflective protection member 120d is formed on the low-concentration phosphor layer 174a and covers the side surface 116c of the light-emitting unit 110c, wherein the reflective protection member 120d fills the trench C and exposes the light-emitting unit 110c The first electrode pad 113 and the second electrode pad 115. Here, the reflection protection member 120d is, for example, a white glue layer.

Finally, please refer to FIGS. 15D and 15E at the same time to remove the first release layer 30, A second release layer 40 is also provided so that the first electrode pad 113 and the second electrode pad 115 of the light-emitting unit 110c contact the second release film 40. Here, the second release layer 40 is, for example, UV glue or double-sided tape. Then, a second cutting process is performed to cut the reflective protection member 120d and the low-concentration phosphor layer 174a along the extending direction of the trench C (ie, the extending direction of the cutting line L in FIG. 15D) to form a plurality of The light emitting devices 100k are separated from each other. Each light emitting device 100k has at least one light emitting unit 110c, a wavelength conversion adhesive layer 170a disposed on the upper surface 112c of the light emitting unit 110c, and a reflective protection member 120d covering the side surface 116c of the light emitting unit 110c. In this embodiment, the wavelength conversion glue layer 170a includes a high-concentration fluorescent glue layer 172a and a low-concentration fluorescent glue layer 174a. Here, the edge 171a of the low-concentration fluorescent glue layer 174a of the wavelength conversion glue layer 170a is aligned with The edge 121 of the reflective protection member 120d is further covered with the edge 173a of the high-concentration phosphor layer 172a. The second release layer 40 is removed, and the fabrication of the light-emitting device 100k is completed.

In terms of structure, please refer to FIG. 15E again. The light-emitting device 100k of this embodiment includes a light-emitting unit 110c, a reflective protection member 120d, a transparent adhesive layer 150c, and a wavelength conversion adhesive layer 170a. The wavelength conversion glue layer 170a is disposed on the upper surface 112c of the light-emitting unit 110c, wherein the wavelength conversion glue layer 170a includes a low-concentration fluorescent glue layer 174a and a high-concentration fluorescent glue layer 172a, and the high-concentration fluorescent glue layer 172a is located at a low concentration Between the fluorescent glue layer 174a and the light emitting unit 110c, and the edge 171a of the wavelength conversion glue layer 170a extends beyond the side surface 116c of the light emitting unit 110c. Here, the low-concentration fluorescent glue layer 174 can be used as a light-transmitting protective layer to increase the water vapor transmission path and effectively prevent water vapor infiltration. The transparent adhesive layer 150c is disposed on the side surface 116c of the light-emitting unit 110c and the reflective Between the protective parts 120d, the position of the light-emitting unit 110c is fixed. The reflective protection member 120d of this embodiment is along the transparent adhesive layer 150c covering the side surface 116c of the light-emitting unit 110c, and is further covered on the two side edges 173a of the high-concentration fluorescent adhesive layer 172a of the wavelength conversion adhesive layer 170a. The light-emitting device 100k of this embodiment does not need to use a conventional supporting bracket to support and fix the light-emitting unit 110c, and can effectively reduce the package thickness and the manufacturing cost. At the same time, the reflective protection member 120d with high reflectivity can also effectively improve the forward light extraction efficiency of the light emitting unit 110c. In addition, the low-concentration phosphor adhesive layer 174a of the wavelength conversion adhesive layer 170a of this embodiment covers a top surface 122d of the reflective protection member 120d. In other words, the edge 173a of the high-concentration phosphor layer 172a of the wavelength conversion adhesive layer 170a of this embodiment is not aligned with the edge 171a of the low-concentration phosphor layer 174a.

In other embodiments, please refer to FIG. 16A. The light-emitting device 100m in this embodiment is similar to the light-emitting device 100j in FIG. 14E. The difference is that the reflective protection member 120m of this embodiment completely fills the first electrode pad 113 and The gap S between the second electrode pads 114 completely covers a first side surface 113b of the first electrode pad 113 and a second side surface 115b of the second electrode pad 115, and a bottom surface 124m of the reflective protection member 120m is in line On the first bottom surface 113 a of the first electrode pad 113 and the second bottom surface 115 a of the second electrode pad 115. In this way, light leakage from the bottom of the light emitting device 100m can be avoided. In addition, the reflective protection member 120m completely covers both sides of the wavelength conversion glue layer 170a. Furthermore, since the reflective protection member 120m has good coating properties and better structural strength, the light-emitting device 100m of this embodiment does not need to use a conventional supporting bracket to support and fix the light-emitting unit 110c, and can effectively reduce Package thickness and manufacturing cost.

Or, please refer to FIG. 16B. The light-emitting device 100n of this embodiment is similar to the light-emitting device 100k of FIG. 16A, except that the reflective protection member 120n of this embodiment is filled in the first electrode pad 113 and the second electrode pad. The gap S between 114 is not completely filled, and the reflective protector 120n only covers part of the first side surface 113b of the first electrode pad 113 and part of the second side surface 115b of the second electrode pad 115. In other words, there is a height difference H between a bottom surface 124n of the reflective protection member 120n, the first bottom surface 113a of the first electrode pad 113 and the second bottom surface 115a of the second electrode pad 115. Or, please refer to FIG. 16C. The light-emitting device 100p in this embodiment is similar to the light-emitting device 100n in FIG. 16B. The difference is that the first electrode pad 113' and the second electrode pad 115' in this embodiment are embodied as The multi-layer metal layer may be composed of the first metal layer M1 and the second metal layer M2, but it is not limited thereto. The reflective protector 120p completely covers the side surfaces of the first metal layer M1 of the first electrode pad 113' and the second electrode pad 115, but does not completely cover the second metal of the first electrode pad 113' and the second electrode pad 115' Side surface of layer M2. In short, the first electrode pads 113, 113' and the second electrode pads 115, 115' of the light-emitting units 110c, 110c' of the light-emitting devices 100m, 100n, and 100p can be a single metal layer or multiple metal layers. Be restricted.

17A to 17E are schematic cross-sectional views of a manufacturing method of a light-emitting device according to an embodiment of the invention. Regarding the manufacturing method of the light-emitting device of this embodiment, first, referring to FIG. 17A, a wavelength conversion glue layer 210 is provided. The wavelength conversion glue layer 210 can be a single layer glue layer or a multi-layer glue layer. The wavelength conversion in this embodiment The glue layer 210 includes a low-concentration fluorescent glue layer 212 and a low-concentration fluorescent glue layer 212 On the high-concentration fluorescent glue layer 214. Here, the step of forming the wavelength conversion adhesive layer 210 is, for example, by mixing a dopant and a colloid to form a wavelength conversion adhesive material layer by uniformly mixing phosphor (not shown) and silicone (not shown). (Not shown) Lay on a release film (not shown), and then let the wavelength conversion adhesive material layer stand for a period of time, such as 24 hours later, due to the difference in density between the phosphor and the silicone, a separate low is formed The wavelength conversion glue layer 210 is composed of a high-concentration fluorescent glue layer 212 and a high-concentration fluorescent glue layer 214, wherein the high-concentration fluorescent glue layer 214 is deposited under the low-concentration fluorescent glue layer 212, and the high-concentration fluorescent glue layer 214 is yellow, for example, and the low-concentration phosphor layer 212 is, for example, transparent. The thickness of the low-concentration phosphor layer 212 is preferably greater than the thickness of the high-concentration phosphor layer 214. In one embodiment, the thickness ratio may be Between 1 and 200, but not limited to this.

Next, referring to FIG. 17A again, a double-sided adhesive film 10a is provided. The low-concentration fluorescent adhesive layer 212 of the wavelength conversion adhesive layer 210 is disposed on the double-sided adhesive film 10a to fix the wavelength conversion adhesive through the double-sided adhesive film 10a. The location of layer 210. Then, a first cutting process is performed to cut from the high-concentration phosphor layer 214 to a part of the low-concentration phosphor layer 212 to form a plurality of trenches C1. Here, the depth of each trench C1 is at least half the thickness of the wavelength conversion adhesive layer 210. For example, if the thickness of the wavelength conversion adhesive layer 210 is 240 microns, and the depth of the trench C1 is, for example, 200 microns. At this time, the trench C1 can divide the low-concentration phosphor layer 212 of the wavelength conversion adhesive layer 210 into a flat portion 212a and a protrusion 212b located on the flat portion 212a, and the high-concentration phosphor layer 214 is located on the protrusion部212b上.

Next, referring to FIG. 17B, a plurality of light-emitting units 220 arranged at intervals Disposed on the wavelength conversion adhesive layer 210, each light emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, a side surface 226 connecting the upper surface 222 and the lower surface 224, and is located on the lower surface 224 and separated from each other Of a first electrode pad 223 and a second electrode pad 225. The upper surface 222 of the light-emitting unit 220 is located on the high-concentration fluorescent glue layer 214 of the wavelength conversion glue layer 210 to increase the light extraction rate and improve the light type. The trench C1 divides the light-emitting unit 220 into a plurality of units A. In this embodiment, each unit A includes at least two light-emitting units 220 (two light-emitting units 220 are schematically shown in FIG. 17B). Each light-emitting unit 220 is, for example, a light-emitting diode chip with a light-emitting wavelength between 315 nm and 780 nm, and the light-emitting diode chip includes, but is not limited to, ultraviolet light, blue light, green light, yellow light, and orange light. Light or red light emitting diode chip.

Next, referring to FIG. 17B again, a transparent adhesive layer 230a is formed on the wavelength conversion adhesive layer 210 and is extended on the side surface 226 of the light emitting unit 220. As shown in FIG. 17B, the light-transmitting adhesive layer 230a gradually thickens from the lower surface 224 of each light-emitting unit 220 to the upper surface 222, and the light-transmitting adhesive layer 230a has a concave surface 232 relative to the side surface 226 of the light-emitting unit 220. , But not limited to this. Here, the purpose of the light-transmitting adhesive layer 230a is to fix the position of the light-emitting unit 220. Since the light-transmitting adhesive layer 230a is a light-transmitting material and has a refractive index greater than 1, it can also increase the light extraction effect on the side of the chip.

Next, referring to FIG. 17C, a reflective protective member 240 is formed between the light-emitting units 220 and fills the trench C1, wherein the reflective protective member 240 is formed on the wavelength conversion adhesive layer 210 and covers each unit A and fills the trench Slot C1. The reflective protector 240 exposes the lower surface 224 of each light-emitting unit 220, the first electrode pad 223, and the second electrical 极垫225. Here, the reflectivity of the reflective protective member 240 is at least greater than 90%, and the reflective protective member 240 is, for example, a white glue layer. The reflective protective member 240 is formed by, for example, dispensing through glue, where the reflective protective member 240 directly covers the light-transmitting glue layer 230a and extends along the light-transmitting glue layer 230a to cover the edge of the high-concentration fluorescent glue layer 214 and fill Full groove C1. At this time, the orthographic projection of the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220 on the double-sided adhesive film 10a does not overlap the orthographic projection of the reflective protector 240 on the double-sided adhesive film 10a.

Next, referring to FIG. 17C again, a second cutting process is performed to penetrate the low-concentration phosphor layer 212 from the reflective protection member 240 along the trench C1 to form a plurality of light-emitting devices 200a separated from each other. At this time, as shown in FIG. 17C, the wavelength conversion adhesive layer 210 contacted by the two light-emitting units 220 in each unit A is continuous, which means that these light-emitting units 220 have the same light-emitting surface, so the light-emitting units 220 emit Light can pass through the transparent low-concentration phosphor layer 212 to guide light, so that the light-emitting device 200a of this embodiment has better light-emitting uniformity.

After that, please refer to FIG. 17C and FIG. 17D at the same time. After the second cutting procedure is performed, a film turning procedure is required. First, a UV glue film 20a is provided on the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220 to fix the relative positions of the light-emitting devices 200a. Then, the double-sided adhesive film 10a is removed to expose the low-concentration phosphor adhesive layer 212 of the wavelength conversion adhesive layer 210. Finally, referring to FIG. 17E, the UV glue film 20a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220. So far, the fabrication of the light-emitting device 200a has been completed. It should be noted that, for convenience of description, FIG. 17E schematically illustrates only one light emitting device 200a.

In terms of structure, please refer to FIG. 17E again. The light-emitting device 200a includes a plurality of light-emitting units 220 (two light-emitting units 220 are schematically shown in FIG. 17E), a wavelength conversion adhesive layer 210 and a reflection protection member 240. Each light-emitting unit 220 has an upper surface 222 and a lower surface 224 opposite to each other, a side surface 226 connecting the upper surface 222 and the lower surface 224, and a first electrode pad 223 and a first electrode pad 223 and a first electrode pad 223 on the lower surface 224 and separated from each other. Two electrode pad 225. The wavelength conversion adhesive layer 210 is disposed on the upper surface 222 of the light-emitting unit 220, and the wavelength conversion adhesive layer 210 includes a low-concentration phosphor layer 212 and a high-concentration phosphor layer 214. The low-concentration phosphor layer 212 has a flat portion 212a and a protrusion 212b on the flat portion 212a. The high-concentration phosphor layer 214 is disposed between the upper surface 222 and the protrusion 212 b. The high-concentration phosphor layer 214 covers the protrusion 212 b and contacts the upper surface 222 of the light-emitting unit 220. The light emitting units 220 are arranged at intervals and part of the wavelength conversion glue layer 210 is exposed. The reflective protection member 240 covers the side surface 226 of each light-emitting unit 220 and covers the wavelength conversion adhesive layer 210 exposed by the light-emitting unit 220. The reflective protector 240 exposes the lower surface 224 of each light-emitting unit 220, the first electrode pad 223 and the second electrode pad 225. The edge of the reflective protection member 240 is aligned with the edge of the flat portion 212 a of the low-concentration phosphor layer 212.

Since the light-emitting units 220 in the light-emitting device 200a of this embodiment are in contact with only one wavelength conversion adhesive layer 210, it means that the light-emitting units 220 have the same light-emitting surface, and the edge of the low-concentration phosphor layer 212 is in contact with the reflective protection member. The edges of 240 are cut straight. Therefore, the light emitted by the light-emitting unit 220 is guided through the low-concentration phosphor layer 212, so that the light-emitting device 200a of this embodiment can have a larger light-emitting area and better light-emitting uniformity. In addition, the reflective protector 240 covers the light-emitting unit 220 The side surface 226 of the light-emitting unit 220, and the reflective protector 240 exposes the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220. Therefore, the light-emitting device 200a of the present embodiment does not need to use a conventional supporting bracket to support and fix the light-emitting unit 220, which can effectively reduce the package thickness and manufacturing cost, and at the same time, can effectively improve the forward light extraction efficiency of the light-emitting unit 220.

It is worth mentioning that the present embodiment does not limit the structure of the light-transmitting adhesive layer 230a, although the light-transmitting adhesive layer 230a depicted in FIG. 17E is embodied as having a concave surface relative to the side surface 226 of the light-emitting unit 220 232. In other words, the reflective protection member 240 further includes a reflective surface 242 in contact with the light emitting unit 220, and the reflective surface 242 is embodied as a curved surface. However, in other embodiments, please refer to FIG. 18A. The light-emitting device 200b of this embodiment is similar to the light-emitting device 200a in FIG. 17E. The difference is that the transparent adhesive layer 230b is opposite to the side surface of each light-emitting unit 220. 226 has a convex surface 234, which can effectively increase the lateral light output of the light emitting unit 220, and can also increase the light output area of the light emitting device 200b through the configuration of the wavelength conversion adhesive layer 210. In other words, the reflective surface 242a of the reflective protector 240a is embodied as a curved surface. Alternatively, please refer to FIG. 18B. The light-emitting device 200c of this embodiment is similar to the light-emitting device 200a in FIG. 17E, except that the light-transmitting adhesive layer 230c has an inclined surface relative to the side surface 226 of each light-emitting unit 220. 236. In other words, the reflective surface 242b of the reflective protector 240b is embodied as a plane.

It must be noted here that the following embodiments follow the component numbers and part of the content of the previous embodiments, where the same reference numbers are used to represent the same or similar components, and the description of the same technical content can refer to the previous embodiments. The following embodiments No longer heavy Repeat.

19A to 19E are schematic cross-sectional diagrams of a method of manufacturing a light-emitting device according to another embodiment of the invention. The main difference between the manufacturing method of the light-emitting device 200d of this embodiment and the manufacturing method of the light-emitting device 200a in FIGS. 17A to 17E is that: please refer to FIG. 19A, when the first cutting process is performed, a plurality of slaves are formed. The high-concentration phosphor layer 214' is cut to a part of the second trench C2' of the low-concentration phosphor layer 212'. As shown in FIG. 19A, the positions of the trenches C1' and the second trenches C2' are staggered, wherein the depth of each trench C1' is at least half the thickness of the wavelength conversion adhesive layer 210', and each second The depth of the trench C2' is the same as the depth of each trench C1'. For example, if the thickness of the wavelength conversion adhesive layer 210' is 240 microns, the depth of the trench C1' and the depth of the second trench C2' are, for example, 200 microns, but it is not limited thereto. At this time, the flat portion 212a' of the low-concentration phosphor layer 212' has a thickness T. Preferably, the thickness T is, for example, between 20 microns and 50 microns. The second trench C2' divides the protrusions of the low-concentration phosphor layer 212' in the wavelength conversion adhesive layer 210' into two protrusions 212b', and the high-concentration phosphor layer 214' is located at these protrusions 212b 'on.

Next, referring to FIG. 19B, the light-emitting units 220 arranged at intervals are disposed on the wavelength conversion adhesive layer 210', wherein the second groove C2' is located between the two light-emitting units 220 in each light-emitting unit unit A, and emits light The units 220 are respectively disposed on the protruding sub-parts 212b', and the upper surface 222 of the light-emitting unit 220 directly contacts the high-concentration phosphor layer 214'. Preferably, the ratio of the length of each protruding sub-part 212b' to the length of the corresponding light-emitting unit 220 is greater than 1 and less than 1.35, that is, the low-density fluorescent The edge of the protruding portion 212b' of the photoresist layer 212' is outside the edge of the light-emitting unit 220, and the edge of the high-concentration phosphor layer 214' also extends beyond the edge of the light-emitting unit 220, which can effectively increase the light emission of the light-emitting unit 220 area. Next, a light-transmitting adhesive layer 230a is formed on the side surface 226 of the light-emitting unit 220, wherein the light-transmitting adhesive layer 226 is only disposed on the side surface 226 of the light-emitting unit 220 and extends to the high-concentration phosphor of the wavelength conversion adhesive layer 210' On the photoresist layer 214', it is not extended on the low-concentration phosphor layer 212'.

Next, similar to the steps of FIGS. 17C, 17D, and 17E, please refer to FIG. 19C first, that is, forming a reflective protection member 240 on the wavelength conversion adhesive layer 210' and covering each cell A and filling the trenches C1' and The second trench C2' is followed by a second cutting process to penetrate the low-concentration phosphor layer 212' from the reflective protection member 240 along the trench C1' to form a plurality of light-emitting devices 200d separated from each other. Next, please refer to FIGS. 19C and 19D at the same time. After the second cutting process is performed, a film turning process is required. First, the UV glue film 20a is provided on the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220 to fix the relative positions of the light-emitting devices 200a. Then, the double-sided adhesive film 10a is removed to expose the low-concentration phosphor adhesive layer 212' of the wavelength conversion adhesive layer 210'. Finally, referring to FIG. 19E, the UV glue film 20a is removed to expose the first electrode pad 223 and the second electrode pad 225 of the light-emitting unit 220. So far, the fabrication of the light-emitting device 200d has been completed. It should be noted that, for convenience of description, FIG. 19E schematically illustrates only one light-emitting device 200d.

Please refer to FIG. 19E, FIG. 20A and FIG. 20B at the same time. It should be noted that FIG. 19E shows a schematic cross-sectional view along the line Y-Y in FIG. 20A. The light-emitting device 200d of this embodiment is similar to the light-emitting device 200a in FIG. The difference is that the wavelength conversion adhesive layer 210' exposed between the two light-emitting units 220 further has a second trench C2', wherein the second trench C2' extends from the high-concentration phosphor layer 214' to a portion Low-concentration fluorescent glue layer 212'. That is to say, the two light-emitting units 220 are arranged on a continuous wavelength conversion adhesive layer 210', so the light-emitting units 220 have the same light-emitting surface, and the edge of the low-concentration phosphor layer 212' and the reflective protection member 240 The edges are neat. Therefore, the light emitted by the light-emitting unit 220 is guided through the low-concentration phosphor layer 212', so that the light-emitting device 200d of this embodiment can have a larger light-emitting area and better light-emitting uniformity.

In particular, when the first cutting procedure is performed, the cutting depths in the direction of the line X-X and the direction of the line Y-Y in FIG. 20A are substantially the same. That is, please refer to FIG. 20B. In the cross-sectional view along the line XX, the flat portion 212a' of the low-concentration phosphor layer 212' has a thickness T. Please refer to FIG. 19E. The flat portion 212a' of the concentrated phosphor layer 212' also has a thickness T. Preferably, the thickness T is, for example, between 20 microns and 50 microns.

Of course, in other embodiments, during the first cutting process, the flat portion 212a' of the low-concentration phosphor layer 212' can also have different thicknesses when cutting in different directions. FIG. 21A is a three-dimensional schematic diagram of a light emitting device according to another embodiment of the invention. 21B and 21C are respectively schematic cross-sectional views taken along the line X'-X' and the line Y'-Y' of FIG. 21A. Please refer to Figure 21A, Figure 21B and Figure 21C at the same time. When performing the first cutting procedure, the cutting depth in the direction of the line X'-X' and the direction of the line Y'-Y' in Figure 21A is different, resulting in wavelength The conversion adhesive layer 210' further includes a first exposed side portion and a second exposed side portion that are not covered by the reflective protector 240. An exposed side portion is not parallel to the second exposed side portion, and the thickness of the wavelength conversion glue layer 210' at the first exposed side portion is different from the thickness of the wavelength conversion glue layer 210' at the second exposed side portion. In detail, the flat portion 212a" of the low-concentration phosphor layer 212" has a first thickness T1 in the direction of the line X'-X', and the flat portion 212a" of the low-concentration phosphor layer 212" is at Y The direction D2 of the'-Y' has a second thickness T2, and the first thickness T1 is different from the second thickness T2. Preferably, the first thickness T1 is, for example, between 50 μm and 200 μm, and the second thickness T2 is, for example, between 20 μm and 50 μm.

Since the flat portion 212a" of the low-concentration phosphor layer 212" of this embodiment has different first thickness T1 and second thickness T2 in the X'-X' direction and the Y'-Y' direction, respectively, Therefore, the brightness reduction caused by the dark band between two adjacent light-emitting units 220 can be effectively reduced, and the light-emitting uniformity of the light-emitting device 200e can be improved. In addition, it is worth mentioning that, taking the direction of the line Y'-Y' as an example, when the thickness T2 of the flat portion 212a" of the low-concentration phosphor layer 212"' is increased from 0.04 mm (mm) to 0.2 In millimeters (mm), the light output angle of the light emitting unit 220 can also be increased from 120 degrees to 130 degrees, which means that the light output angle of the light emitting unit 220 can be increased by 10 degrees. In short, the thickness of the flat portion 212a" of the low-concentration phosphor layer 212"' is positively correlated with the light-emitting angle of the light-emitting unit 220.

In summary, because the reflective protection member of the present invention covers the side surface of the light-emitting unit, and the bottom surface of the reflective protection member exposes the first bottom surface of the first electrode pad and the second bottom surface of the second electrode pad of the light-emitting unit. Therefore, the light-emitting device of the present invention not only does not need to use the conventional supporting bracket to support and fix the light-emitting unit, but can effectively reduce the package thickness and manufacturing cost, and at the same time, it can also effectively improve the forward direction of the light-emitting unit. Light efficiency.

In addition, since the light-emitting units in the light-emitting device of the present invention are in contact with only one wavelength conversion adhesive layer, it means that these light-emitting units have the same light-emitting surface, and the edge of the low-concentration phosphor layer is cut from the edge of the reflective protection member. Qi. Therefore, the light emitted by the light-emitting unit is guided through the low-concentration phosphor layer, so that the light-emitting device of the present invention can have a larger light-emitting angle and better light-emitting uniformity. In addition, the reflective protector covers the side surface of the light-emitting unit and exposes the first electrode pad and the second electrode pad of the light-emitting unit. Therefore, the light-emitting device of the present invention does not need to use the conventional supporting bracket to support and fix the light-emitting unit, which can effectively reduce the package thickness and manufacturing cost, and at the same time, can effectively improve the forward light extraction efficiency of the light-emitting unit.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100a: Light-emitting device

110a: light-emitting unit

112a: upper surface

113: First electrode pad

113a: first bottom surface

114a: lower surface

115: second electrode pad

115a: second bottom surface

116a: side surface

120: reflection protection

122: top surface

124: Bottom

Claims (10)

A method for manufacturing a light-emitting device includes: providing a wavelength conversion layer; arranging a plurality of light-emitting units on the wavelength conversion layer at intervals and exposing two electrode pads of each light-emitting unit; by removing the wavelength A part of the conversion layer is formed to form a plurality of trenches on the wavelength conversion layer, wherein the trenches are located between the light-emitting units, and the depth of each trench is less than the thickness of the wavelength conversion layer; forming a reflection protection member On the wavelength conversion layer and located between the light-emitting units, and the reflection protection member is filled in the groove, wherein the reflection protection member exposes the electrode pads of the light-emitting units; and along the The groove performs a cutting process by cutting the wavelength conversion layer and the reflection protection member to form a plurality of light-emitting devices, wherein one side surface of each light-emitting device exposes a part of the wavelength conversion layer and the reflection protection member A part of the outline of each trench is filled, wherein the lower surface of the electrode pads of each light-emitting unit in each light-emitting device is a free surface. According to the manufacturing method of the light-emitting device described in claim 1, wherein the depth of each groove is at least half of the thickness of the wavelength conversion layer. The manufacturing method of the light-emitting device as described in the first item of the scope of the patent application further includes: after the light-emitting units are arranged on the wavelength conversion layer in an interval, forming a light-transmitting layer on the wavelength conversion layer. The manufacturing method of the light-emitting device as described in item 1 of the scope of patent application further includes: forming a light-transmitting layer on the wavelength conversion layer before the light-emitting units are arranged on the wavelength conversion layer at intervals. According to the manufacturing method of the light-emitting device described in item 1 of the scope of patent application, the reflective protection member further includes a reflective surface in contact with the light-emitting unit. According to the manufacturing method of the light-emitting device described in item 5 of the scope of patent application, the reflective surface of the reflective protection member is a flat surface or a curved surface. The method of manufacturing a light-emitting device according to the first item of the patent application, wherein the wavelength conversion layer further includes a low-concentration phosphor layer and a high-concentration phosphor layer, and the light-emitting units are arranged on the high-concentration phosphor layer , Wherein the phosphor concentration of the low-concentration phosphor layer is less than the phosphor concentration of the high-concentration phosphor layer. A method for manufacturing a light-emitting device includes: providing a wavelength conversion layer; arranging a plurality of light-emitting units on the wavelength conversion layer at intervals and exposing two electrode pads of each light-emitting unit, wherein the wavelength conversion layer is more Comprising a low-concentration phosphor layer and a high-concentration phosphor layer, the light-emitting units are arranged on the high-concentration phosphor layer, wherein the phosphor concentration of the low-concentration phosphor layer is less than that of the high-concentration phosphor layer Light powder concentration; by removing part of the high-concentration phosphor layer to form a plurality of trenches on the wavelength conversion layer, wherein the trenches are located between the light-emitting units, and the depth of each trench is less than The thickness of the wavelength conversion layer; Forming a reflection protection member on the wavelength conversion layer and between the light-emitting units, and the reflection protection member is filled in the groove, wherein the reflection protection member exposes the electrode pads of the light-emitting units; And performing a cutting process along the grooves by cutting the wavelength conversion layer and the reflective protection member to form a plurality of light-emitting devices, wherein one side surface of each light-emitting device exposes the low-concentration phosphor layer and The contour of each groove filled with a part of the reflective protection member. According to the method for manufacturing a light-emitting device according to item 1 or 8 of the scope of the patent application, the reflective protection member of each light-emitting device further includes a reflective surface facing the light-emitting unit and inclined to one side of the light-emitting unit surface. According to the manufacturing method of the light-emitting device described in item 9 of the scope of patent application, the reflective surface of the reflective protection member includes a flat surface or a curved surface.

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