TW201403873A - Method for manufacturing LED package - Google Patents

Abstract

A method for manufacturing a light emitting diode (LED) package includes the following steps: providing a substrate, the substrate having a plurality of electrodes and first cross-communicating grooves surrounding the electrodes; fixing at least one LED die on the substrate in a manner that the LED die is electrically connected to the electrodes; providing a gelling encapsulation layer having a plurality of second cross-communicating grooves corresponding to the first grooves; inverting the substrate and pressing the substrate to join the encapsulation layer, wherein the LED die is embedded into the encapsulation layer and the first grooves corresponds to the second grooves, and cooperatively form a plurality of closed cross-communicating grooves; forming at least one injection hole by which the closed cross-communicating grooves are communicated with the outer space, injecting fused materials through the injection hole into the closed cross-communicating grooves to form reflecting cups; and firing the encapsulation layer.

Description

Method for manufacturing light emitting diode package structure

The present invention relates to a semiconductor light emitting diode, and more particularly to a method of fabricating a light emitting diode package structure.

Light-emitting diodes have been used in more and more occasions due to their high luminous efficiency, low energy consumption, pollution-free, etc., for example, as indicator lights, lights, display screens, and the like.

Before being applied to a specific field, the light-emitting diode needs to be packaged to protect the light-emitting diode wafer, thereby achieving high luminous efficiency and long service life.

The manufacturing method of the LED package structure generally includes the steps of: providing a substrate on which a plurality of electrodes are disposed; separately forming a reflector, and disposing the reflector on the substrate; and providing a light-emitting diode chip to emit a light-emitting diode The body wafer is disposed in the reflective cup and electrically connected to the electrode on the substrate; dispensing the liquid encapsulating material mixed with the fluorescent powder on the LED substrate in the reflective cup; and curing the packaging material to form the fluorescent material Floor.

In the manufacturing method of the above-mentioned light-emitting diode package structure, the reflector cup needs to be separately molded, formed on the substrate after molding, and then the light-emitting diode wafer is disposed in the light-emitting cup and electrically connected to the electrodes on the substrate, and finally After the dispensing and curing, the package of the light-emitting diode is completed, the production process is complicated, and the production efficiency is low, which is disadvantageous for mass production of the light-emitting diode package structure.

In view of the above, it is necessary to provide a manufacturing method of a light-emitting diode package structure with high production efficiency.

A manufacturing method of a light-emitting diode package structure, comprising the steps of: providing a substrate, wherein the substrate is provided with a plurality of electrodes, and the substrate further has a plurality of first gates that are connected in cross-connection, wherein the first runners are respectively disposed around the electrodes Providing a light-emitting diode chip, the light-emitting diode chip is disposed on the substrate and electrically connected to the electrodes; and providing an encapsulation layer, the encapsulation layer is a gel-like structure, and the encapsulation layer is opened corresponding to the first runner of the substrate a plurality of cross-connected second runners; the substrate is pressed upside down on the encapsulation layer, the LED chips are embedded in the encapsulation layer, and the first runner of the substrate and the second runner of the encapsulation layer are opposite each other Cooperating a closed runner with internal cross communication; providing a injection hole and forming a reflector component, the injection hole communicating the runner with the outside, injecting a molten molding into the runner through the injection hole to form the reflector component; and curing Encapsulation layer.

Due to the internal cross-connection of the runner, the molten molding material can quickly fill the runner through the injection hole, thereby directly forming the reflector component, thereby reducing the production process of the separately formed reflector component, thereby improving the overall structure of the LED package structure. Productivity.

Referring to FIG. 1 , a flow chart of a method for fabricating a light emitting diode package structure according to an embodiment of the present invention is shown. The method for manufacturing the LED package structure includes the following steps:

In step S101, please refer to FIG. 2 and FIG. 3 together to provide the substrate 10. A plurality of first sprues 11 intersecting each other are formed on the top surface of the substrate 10. The first launders 11 divide the top of the substrate 10 into an annular flange 12 disposed around the periphery of the substrate 10 and a plurality of relatively independently disposed projections 13 disposed in the flange 12. The substrate 10 further includes a plurality of first electrodes 21 and second electrodes 22 disposed in pairs on the projections 13 of the substrate 10. The first electrode 21 and the second electrode 22 disposed in pairs are disposed on a protruding portion 13 of the substrate 10 . The first electrode 21 and the second electrode 22 are spaced apart from each other and electrically isolated from each other.

The substrate 10 is made of a material having good thermal conductivity, such as metal or ceramic. If the substrate 10 is made of a metal material, it is also necessary to consider the insulation arrangement of the substrate 10 and the first electrode 21 and the second electrode 22 to ensure electrical safety of the LED package structure. In the present embodiment, the first launders 11 are elongated, and the first laminations 11 are vertically and horizontally connected to each other and disposed around the protrusions 13 . The protrusions 13 are distributed in an array on the substrate 10 . the top of.

In step S102, please refer to FIG. 4 and FIG. 5 together to provide the LED wafer 30. The light-emitting diode chips 30 are correspondingly provided on the protruding portions 13 of the substrate 10. The light emitting diode chip 30 is electrically connected to the first electrode 21 by the wire 31, and is electrically connected by the wire 32 and the second electrode 22.

In this embodiment, the positive and negative solder joints of the LED wafer 30 are on the same side, that is, the LED package structure in this embodiment is horizontal. In other embodiments, the LED package structure is vertical, that is, positive and negative solder joints are located on both sides of the LED array 30, one of the solder joints is electrically connected to the first electrode 21 by the wire 31, and the other The solder joint is directly electrically connected to the second electrode 22. The light emitting diode package structure also directly electrically connects the light emitting diode wafer 30 to the first electrode 21 and the second electrode 22 by a flip-chip method.

Step S103, please refer to FIG. 6 and FIG. 7 together to provide an encapsulation layer 40. The encapsulating layer 40 is uniformly doped with the phosphor material, and the light radiated by the LED chip 30 is wavelength-converted to emit light of different colors in the LED package structure. The phosphor material comprises garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder, and oxynitride. One or more of a base phosphor and a nitride-based phosphor. The encapsulation layer 40 is a gel-like structure and is not fully cured, has a low hardness, and does not spontaneously flow under a normal indoor environment.

The top of the encapsulation layer 40 corresponds to the first sprue 11 of the substrate 10 to open a plurality of second sprues 41 that communicate with each other. The second launders 41 divide the encapsulation layer 40 into a flange 42 disposed around the circumference of the encapsulation layer 40 and a plurality of relatively independently disposed projections 43 disposed around the inside of the flanges 42. The openings of the first sprue 11 and the second sprue 41 corresponding to the first sprue 11 are correspondingly uniform in size. The bottoms of the second runners 41 are located in the encapsulation layer 40.

Further, in order to prevent the encapsulation layer 40 from being deformed by an external force, the encapsulation layer 40 may be disposed on the carrier 50. In this embodiment, the encapsulation layer 40 corresponds to the substrate 10 in shape and size. The size of the carrier 50 is greater than the size of the encapsulation layer 40.

In step S104, referring to FIG. 8 and FIG. 9, the substrate 10 is inverted and pressed onto the encapsulation layer 40. The first runner 11 of the substrate 10 is disposed opposite to the second runner 41 of the package layer 40. The protrusion 13 of the substrate 10 is directly opposite to the protrusion 43 of the package layer 40. The protrusion of the substrate 10 The rim 12 is in direct contact with the flange 42 of the encapsulation layer 40. Since the encapsulating layer 40 has a gel-like structure, the light emitting diode chip 30 on the protruding portion 13 of the substrate 10 is correspondingly embedded in the protruding portion 43 of the encapsulating layer 40. The first sprue 11 of the substrate 10 and the second sprue 41 of the encapsulation layer 40 together define a plurality of runners 60 that are closed up and down and are internally connected in cross.

In the present embodiment, the first spout 11 and the second sprue 41 that surround the sprue 60 are symmetrically distributed on both sides of the pressing surface of the substrate 10 and the encapsulation layer 40. In other embodiments, the first sprue 11 and the second sprue 41 may be asymmetrically distributed on both sides of the pressing surface of the substrate 10 and the encapsulation layer 40 according to the shape of the reflector, for example, the second sprue 41. The depth is greater than the depth of the first sprue 11.

Further, the cross-sectional shape of the first spout 11 and the second sprue 41 is not particularly limited. In the present embodiment, the cross-sectional shapes of the first spout 11 and the second sprue 41 are both rectangular, and other implementations In the example, the first trough 11 and the second sprue 41 have a cross-sectional shape of a “V” shape, or the first sprue 11 has a “V” shape, and the second sprue 41 has a semicircular shape. However, the size of the openings of the first sprue 11 and the second sprue 41 corresponding to the first sprue 11 should be uniform.

In step S105, referring to FIG. 10 and FIG. 11, together, the injection hole 70 is provided and the reflector component 90 is formed. At least two injection holes 70 communicating with the interior of the runners 60 are disposed on the substrate 10. The injection hole 70 is located at the bottom of the first runner 11 of the substrate 10 and penetrates the upper and lower surfaces of the substrate 10. Alternatively, the orifices 70 may be disposed on other components that communicate the runners 60 with the exterior, such as the encapsulation layer 40.

The molten mold is injected into the runner 60 by injection holes 70 by injection molding to form the reflector element 90 (Fig. 12). The material of the molten molding material is Silicone or Epoxy, or PPA (Polyphthalamide) which is opaque to light. The molten mold material cools to form a reflector component 90 (Fig. 12). The molten mold flows along the internally intersecting runners 60 until the entire runner 60 is filled. In order to speed up the molding, a plurality of injection holes 70 may be provided at intervals, and the runners 60 are simultaneously injection molded by the plurality of injection holes 70.

In step S106, please refer to FIG. 12 together to cure the encapsulation layer 40. The encapsulating layer 40 is baked at a high temperature to be completely cured, and the baking temperature is preferably in the range of 150 ° C to 180 ° C. Further, the carrier 50 is separated from the encapsulation layer 40.

Of course, as shown in FIG. 13, the LED package structure formed in the above step S106 may be cut as needed to form a plurality of independent LED package structures. The reflector element 90 is disposed around the LED chip 30. The phosphor layer simultaneously covers the LED chip 30 and the reflector element 90.

Referring to FIG. 14 and FIG. 15 at the same time, it can be understood that the second sprue 41a as shown in step S103 can also extend through the upper and lower surfaces of the entire encapsulation layer 40 up to the carrier 50. The second runner 41a divides the encapsulation layer 40 into a flange 42a disposed around the circumference of the encapsulation layer 40 and a plurality of projections 43a that are completely independent of each other and are not connected to each other, which are disposed inside the flange 42a. Further, the LED package structure shown in FIG. 14 is obtained by the LED manufacturing method shown in FIG. 1 , and the phosphor layer is located in the reflector component. The light-emitting diode wafer 30 is covered in the space enclosed by 90a.

In the present invention, by providing the first runner 11 on the substrate 10 in cross-connection and the second runner 41 on the encapsulation layer 40 corresponding to the cross-connection of the first runner 11, by the substrate 10 and The lamination process of the encapsulation layer 40 forms a cross-connected runner 60, which is then injected into the runner 60 by the orifice 70 to form the reflector element 90. Since the inner side of the runner 60 is cross-connected, the molten material can quickly fill the runner 60, and directly form the reflector element 90 after cooling, thereby reducing the production process of the separately formed reflector component 90, thereby improving the light-emitting diode. The overall production efficiency of the body package structure.

In addition, by providing the first pouring groove 11 and the second pouring groove 41, the shape of the reflecting cup to be formed can be divided into upper and lower parts, and the forming shape of the reflecting cup can be adjusted according to actual needs, thereby flexibly adjusting the LED package structure. The light effect.

It can also be understood that, in the present invention, the size of the first runners 11 can be adjusted as needed, and the sizes of any two first runners 11 are not necessarily the same, such as from the middle of the substrate 10 to the substrate 10. On both sides, the size of the first sprue 11 gradually decreases to a narrow distribution on both sides of the middle width, or the size of the first sprue 11 exhibits a wide and narrow alternating change in the extending direction of the substrate 10. The opening sizes of the first casting grooves 11 and the second casting grooves 41 corresponding to the first casting grooves 11 should be kept uniform.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10. . . Substrate

11. . . First runner

12, 42, 42a. . . Flange

13, 43, 43a. . . Protrusion

twenty one. . . First electrode

twenty two. . . Second electrode

30. . . Light-emitting diode chip

31, 32. . . wire

40. . . Encapsulation layer

41, 41a. . . Second runner

50. . . Carrier board

60. . . Sprue

70. . . Injection hole

90, 90a. . . Reflective cup element

10. . . Substrate

11. . . First runner

12, 42, 42a. . . Flange

13, 43, 43a. . . Protrusion

twenty one. . . First electrode

twenty two. . . Second electrode

1 is a flow chart showing a method of fabricating a light emitting diode package structure according to an embodiment of the present invention.

FIG. 2 is a top plan view of the LED package structure obtained in step S101 in the method for fabricating the LED package structure of FIG. 1 .

FIG. 3 is a cross-sectional view showing the LED package structure obtained in step S101 in the method for fabricating the LED package structure of FIG.

FIG. 4 is a top plan view showing the light emitting diode package structure obtained in step S102 in the method for manufacturing the light emitting diode package structure of FIG. 1 .

FIG. 5 is a cross-sectional view showing the light emitting diode package structure obtained in step S102 in the method for fabricating the LED package structure of FIG.

FIG. 6 is a top plan view of the LED package structure obtained in step S103 in the method for fabricating the LED package structure of FIG.

FIG. 7 is a cross-sectional view showing the light emitting diode package structure obtained in step S103 in the method for fabricating the LED package structure of FIG.

FIG. 8 is a schematic cross-sectional view of the light emitting diode package structure obtained before step S104 in the method for fabricating the LED package structure of FIG. 1 (before pressing).

FIG. 9 is a cross-sectional view (after pressing) of the LED package structure obtained in step S104 in the method for fabricating the LED package structure of FIG.

FIG. 10 is a cross-sectional view (before injection molding) of the light emitting diode package structure obtained in step S105 in the method of manufacturing the light emitting diode package structure of FIG. 1. FIG.

FIG. 11 is a schematic view showing the structure of the light-emitting diode package obtained in step S105 in the manufacturing method of the light-emitting diode package structure of FIG. 1 (before injection molding).

FIG. 12 is a cross-sectional view showing the light emitting diode package structure obtained in step S106 in the method for fabricating the LED package structure of FIG.

13 is a cross-sectional view showing a single light emitting diode after the light emitting diode package structure of FIG.

FIG. 14 is a cross-sectional view showing another LED package structure obtained in step S103 in the method for fabricating the LED package structure of FIG.

FIG. 15 is a cross-sectional view showing a single light emitting diode obtained by the method for manufacturing the light emitting diode package structure of FIG.

Claims (10)

A method of manufacturing a light emitting diode package structure, comprising the steps of:
Providing a substrate on which a plurality of electrodes are disposed, and a plurality of first gates intersecting each other are further disposed on the substrate, and the first runners are respectively disposed around the electrodes;
Providing a light emitting diode chip, the light emitting diode chip is disposed on the substrate and electrically connected to the electrodes;
Providing an encapsulation layer, wherein the encapsulation layer is a gel-like structure, and the encapsulation layer opens a plurality of second sprues that are cross-connected corresponding to the first sprue of the substrate;
The substrate is inverted and pressed onto the encapsulation layer, and the LEDs are embedded in the encapsulation layer, and the first sprue of the substrate and the second sprue of the encapsulation layer are opposite to each other and together define a closed inner communication. Sprue
A injection hole is formed and a reflector member is formed, the injection hole communicates the runner with the outside, and the molten molding material is injected into the runner through the injection hole to form the reflector component; and the encapsulation layer is cured. The manufacturing method of the light emitting diode package structure according to claim 1, wherein the first water tank partitions the substrate into a flange provided around a circumference of the substrate and a plurality of relatives surrounding the inner side of the flange. Stand-alone projections. The method for manufacturing a light emitting diode package structure according to claim 2, wherein the electrodes are disposed in pairs on the protruding portion of the substrate, and the electrodes are spaced apart and electrically isolated from each other. The method for manufacturing a light-emitting diode package structure according to claim 1, wherein before the step of inverting the substrate onto the package layer, the method further comprises: placing the package layer on the carrier layer, and curing the package layer The step of separating the carrier from the encapsulation layer is then performed. The method for manufacturing a light-emitting diode package structure according to claim 4, wherein the second runners penetrate the upper and lower surfaces of the package layer, and the bottoms of the second runners are located on the surface of the carrier. The method for manufacturing a light emitting diode package structure according to claim 1, wherein the bottom of the second runner is located in the package layer. The manufacturing method of the LED package structure of claim 6, wherein the second lamination partitions the encapsulation layer into a flange disposed around a periphery of the encapsulation layer and is disposed around the inner side of the flange. A plurality of embossments that are relatively independently arranged. The method of manufacturing a light emitting diode package structure according to claim 1, wherein the injection hole is formed on the substrate. The manufacturing method of the light emitting diode package structure according to claim 8, wherein the injection hole is located at a bottom of the first casting groove of the substrate and penetrates the upper and lower surfaces of the substrate. The method for manufacturing a light-emitting diode package structure according to claim 1, wherein the first gates and the second runners provided corresponding to the first runners have the same size.