CN102569563B - Wafer level packaging method of light emitting diode with adjustable lens focus - Google Patents
Wafer level packaging method of light emitting diode with adjustable lens focus Download PDFInfo
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- CN102569563B CN102569563B CN 201210018943 CN201210018943A CN102569563B CN 102569563 B CN102569563 B CN 102569563B CN 201210018943 CN201210018943 CN 201210018943 CN 201210018943 A CN201210018943 A CN 201210018943A CN 102569563 B CN102569563 B CN 102569563B
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Abstract
The invention discloses a wafer level packaging method of a light emitting diode with an adjustable lens focus. The method comprises the following steps: in a first step, etching a light emitting diode lens mould microchannel array and a spacing control mould microchannel array surrounding a light emitting diode lens mould groove on a silicon wafer, and disposing proper amount of thermal outgassing agents in a light emitting diode lens mould microchannel; in a second step, carrying out anode bonding of the silicon wafer and a borosilicate glass water in vacuum to form a sealed cavity; in a third step, carrying out heating and heat preservation on a bonding wafer in the air, forming a spherical glass micro-cavity and a spacing control projection ring, carrying out cooling and annealing, and removing silicon to obtain a light emitting diode packaging lens array; in a fourth step, pasting a light emitting diode chip on a substrate; in a fifth step, bonding a wafer level glass micro-cavity and the substrate; in a sixth step, filling up glue into a gap between a light emitting diode chip and the wafer level glass micro-cavity through a spacing control ring gap, and carrying out solidification. The method can be carried out on a wafer level, and the method has the advantages of simplicity and low cost.
Description
Technical field
The present invention relates to a kind of MEMS (microelectromechanical systems) encapsulation technology, relate in particular to the wafer-level encapsulation method of the adjustable light-emitting diode of a kind of lens focus.
Background technology
As lighting use, powerful white light emitting diode (LED) is by scientific research and enterprise's extensive concern, due to light-emitting diode (LED) in order to produce enough light intensity, operating current will be tried one's best greatly, and operating current has brought stern challenge to greatly the heat dissipation problem of light-emitting diode (LED) encapsulation.So, optical package structure by design white light emitting diode (LED), improve its light emission rate, can under certain electric current, obtain enough large light intensity, lens can be for improving the collimation of light beam, so must be useful on the lens that improve light emission rate in light-emitting diode (LED) encapsulating structure simultaneously.The air-tightness that the package lens structure will have simultaneously, because the chip affected by moisture can affect luminescent properties greatly.
The lens of encapsulation LED (LED) are converged with beam collimation most important to emergent ray.The lens of most LED chip are to process by a glue and plastic housing.The lens that wafer level prepares the LED encapsulation can save time, and reduce manufacturing cost.In the optical design of LED lens, LED chip is most important to the bright dipping that encapsulates rear LED chip with respect to the position (relative position of light source and lens focus) of lens, is a great problem in encapsulation light path design and manufacture.
Summary of the invention
The wafer-level encapsulation method that the purpose of this invention is to provide the adjustable light-emitting diode of a kind of process is simple, cost is low lens focus.
The present invention adopts following technical scheme: the wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable comprises the following steps:
The first step, the etching LED lens mould micro slot array corresponding with light emitting diode matrix and control the mould micro slot array around the spacing of LED lens mold slots on silicon wafer, LED lens mould microflute is controlled the mould microflute with spacing and is not communicated with, and at LED lens mould microflute, places appropriate hot bubble release agent;
Second step, by the silicon wafer after etching and Pyrex disk anode linkage in a vacuum, form seal chamber;
The 3rd step, by above-mentioned bonding, good disk is heated to 820 ℃ ~ 950 ℃ in air, and be incubated 0.5 ~ 10min, hot bubble release agent produces gas because of decomposes, make to form spherical glass micro-cavity corresponding to the melten glass of LED lens mould microflute, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute formation spacing and is controlled protruding ring, is cooled to normal temperature, annealing, remove silicon and obtain the LED package lens arra;
The 4th step, mount light-emitting diode chip for backlight unit on the substrate that is prepared with silicon conductive through hole and reflector;
The 5th step, wafer level bonding: described wafer-stage glass micro-cavity and substrate are bondd;
The 6th step is filled up glue by spacing control ring breach in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, and solidifies, and realizes the wafer level packaging of LED;
In above-mentioned steps, the coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepares glass micro-cavity applies fluorescent material, or after the 4th step chip attachment, fluorescent material is coated in to chip surface, or evenly sneak into fluorescent material in the silica gel of filling in the 6th step.
In technique scheme, hot bubble release agent is calcium carbonate powder.Between described LED lens mould microflute, by fluid channel, be connected, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, spacing is controlled between the mould micro slot array and is communicated with respectively, make the spacing of diode lens mould microflute in being communicated with control the mould micro slot array around among.Between described LED lens mould microflute, by fluid channel, be connected, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, and spacing is controlled the mould micro slot array and is communicated with in the part around diode lens mould micro slot array outside.Described first step silicon wafer etching technics is wet etching, and the degree of depth is the 20-100 micron.Described Pyrex are Pyrex7740 glass, and the condition of described anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing described in the 3rd step are: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, then slowly air-cooled to normal temperature.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on substrate (9) by the SMT technology.Glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the Adhesive bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
The present invention obtains following effect:
1. form mutual disconnected LED lens mould microflute and spacing control mould microflute by etching in the present invention, and optionally in LED lens mould microflute, place the high temperature bubble release agent, then carry out in a vacuum that anode is strong to be closed, make it possible to utilize malleation and negative pressure method to prepare spherical glass micro-cavity and spacing control protruding ring structure simultaneously on the same glass wafer, thereby form the lens of the adjustable wafer level light-emitting diode in lens focus position.The method can accurately be controlled the distance between LED chip and chip by the height of projection in the present invention, thereby can carry out flexible design according to the needs of optical design.The height of projection can be by silicon chip erosion the degree of depth accurately adjustable (can by the microelectronics dry method or cheaply wet etching realize), thereby realize accurately adjustable characteristic of LED lens focus position.It has not only increased the window of LED optical design, has improved the optical property that goes out of LED, and has increased the flexibility of encapsulation.
2. the present invention is by being connected by fluid channel between LED lens mould microflute, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, spacing is controlled between the mould micro slot array and is communicated with respectively, make the spacing of diode lens mould microflute in being communicated with control the mould micro slot array around among, these technical measures, realize the wafer level packaging of LED, and can realize the wafer level encapsulating.LED is in series by spacing control ring breach on silicon wafer, projection on prepared glass wafer is around LED chip, therefore after glass wafer and substrate silicon disk bonding, can fill organic resin in passage by one of them spacing control ring breach, another spacing control ring breach, for getting rid of gas, is realized filling glue without empty wafer level.There is method simple, the characteristics that cost is low.The width of spacing control ring breach is much larger than the size of the fluid channel between diode lens, so the glueing channel size is larger, and the encapsulating process can be carried out easily on disk, is not easy to stop up.Diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, makes diode lens glass forming process be more prone to; The size of fluid channel can the oversize LED of impact optical property owing to bearing larger capillary inhibition, but can play the effect that connects LED lens glass chamber, gas while making moulding in the lens glass chamber is communicated with, pressure is even, thereby spherical glass micro-cavity that can the compact dimensions high conformity.
3. the present invention is by being connected by fluid channel between described LED lens mould microflute, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, spacing control the mould micro slot array in the partially communicating measure around diode lens mould micro slot array outside, make the spacing control ring join together in lens periphery, but inside but is not communicated with.With respect to spacing control ring inside, join together and spacing control ring outside forms the scheme surround to the LED spherical glass micro-cavity, can make in the process of encapsulating rapider, but its shortcoming is: if control the speed of bad encapsulating, easily form bubble.
4. in the present invention, the encapsulating structure skin of light-emitting diode (LED) chip is not epoxy resin or silica gel, but the lens microcavity that has adopted Pyrex glass to make is encapsulated, due to the Pyrex glassy phase than organic material, the same photosensitiveness, high-temperature stability and the sealing that have had.The beam projecting rate of light-emitting diode (LED) chip that uses like this glass lens microcavity to encapsulate is higher, and operating current is larger, and high-temperature resistance is strong, is difficult for
Aging, anti-moisture, realized more reliable and stable large-power light-emitting diodes (LED) encapsulation.
5. glass lens encapsulation LED (LED) chip that in the present invention, use goes out, glass lens be
Blow afloat wafer-level glass ball chamber under the effect of microcavity external and internal pressure, smooth surface, Pyrex glass is for the percent of pass very high (> 90% of visible ray simultaneously), so glass lens has very high beam projecting rate, and lens have the effect that focuses on visible ray, the light beam visual angle of outgoing is less, can realize the collimation of light beam.In the present invention, LED chip is used conductive silver glue by chip attachment on the TSV silicon substrate, in pasting chip, realized the electric interconnects of chip positive electrode like this.
In the present invention based on the traditional MEMS processing technology, at first process microcavity and the fluid channel shallow slot structure of for molding on the Si sheet, specific area filling high temperature bubble release agent, by anode linkage technique, Pyrex7740 glass is covered on this shallow slot and forms airtight microcavity again, then heating makes glass melt, the high temperature bubble release agent discharges gas, and gas is transferred in each microcavity by fluid channel, and chamber external and internal pressure official post obtains melten glass and forms the glass spherical microcavity or glass micro-channel.According to the requirement for preparing microcavity and fluid channel, adjust the size ratio of microcavity and fluid channel, when microcavity and fluid channel size approach, during thermoforming, the suffered surface tension of microcavity and fluid channel approaches, forming height approaches, when the microcavity size during much larger than fluid channel, during thermoforming, the suffered surface tension of glass micro-channel is much larger than microcavity, glass micro-channel is difficult to forming cylinder shape fluid channel, so can control by the size of controlling microcavity and fluid channel their height, it is highly lower after fluid channel is shaped, do not affect LED packaged glass lens performance when meeting trickling silica gel.Because glass channel and the microcavity surface of blowing are very smooth, so resistance is very little when injection is mixed with the silica gel of fluorescent material, can more smoothly silica gel be filled with to whole disk.Adopting the high temperature bubble release agent to release provides source of the gas for formed glass spherical microcavity and glass micro-channel, has a cost low, and method is simple, and forming height is high, the characteristics of good sphericity.
7. use the injection pusher of point gum machine as phosphor powder layer silica gel in the present invention, because the pressure of some glue is adjustable, can need to regulate injection pressure and injection rate according to injection process.Here the silica gel injected evenly is mixed with certain density fluorescent material, and after using point gum machine that silica gel is injected to the cavity of wafer level, silica gel (phosphor powder layer) flows into each LED package cavity by fluid channel, can realize white light LEDs.The wafer level phosphor powder layer of having realized by this method LED applies, and has realized wafer level packaging simultaneously.
8. the temperature of anode linkage is 400 degrees centigrade usually, thereby its normal temperature is 673K, forming temperature is 850 degrees centigrade of left and right, normal temperature is the 1123K left and right, the impact of the additional pressure produced according to PV=nRT and surface tension, according to prior art, if the amount of gas is constant, volume after expansion is not enough original two
Doubly, need as can be seen here the darker groove of etching.And the present invention has effectively solved this problem by introducing the high temperature bubble release agent, complex process and the expensive problem of high energy of having avoided the groove of etching high-aspect-ratio to bring, can meet the requirement of LED chip package cavity size.
9. be carved with the silicon chip of microflute and the anode linkage of glass in the present invention and have very high intensity, the characteristics of good leak tightness are difficult for generation and leak and cause moulding failed in heating process.400 ℃ of temperature, under the bonding conditions of voltage direct current 600V, anode linkage can reach better sealing effectiveness.
10. in the 5th step, adopt single channel to inject the method for silica gel, gas in package cavity and fluid channel can be driven away package cavity fully, make the silica gel that is mixed with fluorescent material be full of the space between LED chip and glass micro-cavity fully, avoid the refracting interface caused due to air gap, improved the light extraction efficiency of chip.
11. the annealing process adopted in the present invention can effectively be eliminated Pyrex7740 glass and bear the stress formed in high temperature positive pressure forming process, thereby makes its strength and toughness higher.Annealing temperature is that in 550 ℃～570 ℃ scopes, temperature retention time is 30min, and then Slow cooling is to room temperature.Under this condition, anneal, the stress of can effectively decorporating, the shape that can also make microcavity is substantially without changing, and annealing temperature is too high, easily causes the microcavity shape to change being unfavorable for the encapsulation in rear road, and too low annealing temperature can't effectively be removed inside glass stress.
12. adopt the silicon mould on the TMAH solution removal glass lens microcavity that concentration is 25% in the present invention, can effectively remove silicon chip like this and etching glass not, select silicon chip, glass ratio to be about 2900:1.
13. the present invention prepares the Pyrex7740 glass suitable with the thermal coefficient of expansion of Si as the glass lens micro-cavity structure, because the coupling of the heat between silicon and glass is fine, therefore encapsulation is very little for the impact of the stress of light-emitting diode (LED).
Realize wafer-level glass ball chamber packaging body and the silicon wafer bonding that is loaded with light-emitting diode chip for backlight unit 14. use low temperature glass solder bonding or metal bonding or Adhesive bonding in the present invention.
In MEMS manufacturing technology field, use the MEMS micro-processing technology can on silicon chip, closely process circular microflute, then use Pyrex7740 glass (a kind of glass that contains alkali ion, Pyrex is the product brand of Corning company) carry out bonding realization sealing with the silicon chip that is carved with microflute (placing hot bubble release agent in groove) under vacuum condition, heating and melting prepares glass lens, due to positive pressure, discharge gas in microcavity, so glass lens is blown afloat outside chamber, so just can prepare the good glass lens of light transmittance; Flow in groove at the suction function lower-glass, form spacing and control the projection ring simultaneously.Use glass lens can effectively avoid above problem, glass, as inorganic material, has very high percent of pass to visible ray, and thermal stability is fine, can ageing failure, and the humidity resistance excellence.The passage formed due to the projection ring by series connection guides the silica gel that is mixed with fluorescent material to inject successively in the package cavity of LED chip, the wafer level of having realized the white-light LED fluorescence bisque applies, completed the LED wafer level packaging simultaneously, compare existing some glue monolithic method for packing, greatly improved the Efficiency Decreasing cost.
The accompanying drawing explanation
The schematic top plan view that Fig. 1 is silicon wafer microflute and fluid channel (5:1)
Fig. 2 is the cross sectional representation after silicon wafer microflute and runner thermoforming
The cross sectional representation that Fig. 3 is the glass wafer after the removal silicon mould
Fig. 4 is the cross sectional representation after wafer-stage glass micro-cavity injects silica gel.
Embodiment
embodiment 1the wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable comprises the following steps:
The first step, the etching LED lens mould micro slot array corresponding with light emitting diode matrix and control the mould micro slot array around the spacing of LED lens mold slots on silicon wafer, LED lens mould microflute is controlled the mould microflute with spacing and is not communicated with, and at LED lens mould microflute, places appropriate hot bubble release agent; Lithographic method can adopt dry method or wet etching, can adopt 4 inches silicon chips, and hot bubble release agent can adopt calcium carbonate or titanium hydride powders, and the weighing of powder is as the criterion with the gas flow of the glass micro-cavity volume needs of moulding required size,
Second step, by the silicon wafer after etching and Pyrex disk anode linkage in a vacuum, form seal chamber; Vacuum degree can adopt the vacuum that is less than 1Pa, 0.01Pa for example, and 0.001Pa, 0.0001Pa,
The 3rd step, by above-mentioned bonding, good disk is heated to 820 ℃ ~ 950 ℃ in air, and be incubated 0.5 ~ 10min, hot bubble release agent produces gas because of decomposes, make to form spherical glass micro-cavity corresponding to the melten glass of LED lens mould microflute, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute formation spacing and is controlled protruding ring, is cooled to normal temperature (for example 25 degrees centigrade), annealing, remove silicon and obtain the LED package lens arra;
The 4th step, mount light-emitting diode chip for backlight unit on the substrate that is prepared with silicon conductive through hole and reflector; The position of silicon conductive through hole is corresponding with the assembling position of light-emitting diode, can be on silicon the etching microcavity, and prepare the silicon through hole in its bottom and carry out interconnectedly, reflective quilt can be used commercial reflector, also can inner sputtered aluminum form reflector in the silicon chamber,
The 5th step, wafer level bonding: described wafer-stage glass micro-cavity and substrate are bondd; Bonding can adopt epoxy resin, also can adopt silica gel to carry out the wafer level bonding,
The 6th step is filled up glue by spacing control ring breach in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, and solidifies, and realizes the wafer level packaging of LED; Glue can adopt the commercial silica gel of index matching,
In above-mentioned steps, the coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepares glass micro-cavity applies fluorescent material, or after the 4th step chip attachment, fluorescent material is coated in to chip surface, or evenly sneak into fluorescent material in the silica gel of filling in the 6th step.
In technique scheme, hot bubble release agent is calcium carbonate powder.Between described LED lens mould microflute, by fluid channel, be connected, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, spacing is controlled between the mould micro slot array and is communicated with respectively, make the spacing of diode lens mould microflute in being communicated with control the mould micro slot array around among.Described first step silicon wafer etching technics is wet etching, and the degree of depth is the 20-100 micron.Described Pyrex are Pyrex7740 glass, and the condition of described anode linkage is: 400 ℃ of temperature, voltage: 600V.The process conditions of annealing described in the 3rd step are: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, then slowly air-cooled to normal temperature.In the 4th step, use conductive silver glue or tin cream that light-emitting diode chip for backlight unit (10) is mounted on substrate (9) by the SMT technology.Glass ball cavity packaging body (5) and silicon wafer (9) the bonding employing low temperature glass solder bonding or metal bonding or the Adhesive bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
embodiment 2the wafer-level encapsulation method of the light-emitting diode that a kind of lens focus is adjustable, comprise the following steps: the first step, the etching LED lens mould micro slot array corresponding with light emitting diode matrix and control the mould micro slot array around the spacing of LED lens mold slots on silicon wafer, LED lens mould microflute is controlled the mould microflute with spacing and is not communicated with, and at LED lens mould microflute, places appropriate hot bubble release agent, lithographic method can adopt dry method or wet etching, can adopt 4 inches silicon chips, hot bubble release agent can adopt calcium carbonate, the weighing of powder is as the criterion with the gas flow of the glass micro-cavity volume needs of moulding required size, for example, for 4 inches silicon chips, width is 500 microns, the groove that the degree of depth is 50 microns, the number of groove is 500, need moulding hemisphere glass micro-cavity, the amount of the calcium carbonate used is 10 milligrams, calcium carbonate can be concentrated and be placed in some grooves, also can be placed in a plurality of grooves, between described LED lens mould microflute, by fluid channel, be connected, diode lens mould microflute is greater than 3:1 with the width ratio of fluid channel, spacing is controlled the mould micro slot array and is communicated with in the part around diode lens mould micro slot array outside,
Second step, by the silicon wafer after etching and Pyrex disk anode linkage in a vacuum, form seal chamber; Vacuum degree can adopt the vacuum of 0.02Pa,
The 3rd step, by above-mentioned bonding, good disk is heated to 820 ℃ ~ 950 ℃ in air, and be incubated 0.5 ~ 10min, hot bubble release agent produces gas because of decomposes, make to form spherical glass micro-cavity corresponding to the melten glass of LED lens mould microflute, the inside and outside pressure official post melten glass of spacing control mould microflute is inserted spacing control mould microflute formation spacing and is controlled protruding ring, is cooled to normal temperature (for example 25 degrees centigrade), annealing, remove silicon and obtain the LED package lens arra;
The 4th step, mount light-emitting diode chip for backlight unit on the substrate that is prepared with silicon conductive through hole and reflector; The position of silicon conductive through hole is corresponding with the assembling position of light-emitting diode, can be on silicon the etching microcavity, and prepare the silicon through hole in its bottom and carry out interconnectedly, reflector can be used the reflector that inner sputtered aluminum forms in the silicon chamber of placing LED chip,
The 5th step, wafer level bonding: described wafer-stage glass micro-cavity and substrate are bondd; Bonding can adopt epoxy resin, also can adopt silica gel to carry out the wafer level bonding,
The 6th step is filled up glue by spacing control ring breach in light-emitting diode chip for backlight unit and wafer-stage glass micro-cavity gap, and solidifies, and realizes the wafer level packaging of LED; Glue can adopt the commercial silica gel of index matching,
In above-mentioned steps, the coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity after the 3rd step prepares glass micro-cavity applies fluorescent material, or after the 4th step chip attachment, fluorescent material is coated in to chip surface, or evenly sneak into fluorescent material in the silica gel of filling in the 6th step.
embodiment 3
A kind of wafer-level glass ball cavity encapsulation method of light-emitting diode comprises the following steps:
The first step, utilize the Si micro fabrication upper with the specific microflute of dry etching and fluid channel pattern at Si disk (as 4 inches wafers), the pattern corresponding with packaged LED array: a. micro slot array, between microflute, by fluid channel, be connected, microflute is circular, and microflute and fluid channel size are adjusted than according to the preparation demand; B. spacing is controlled the mould microflute; Evenly place appropriate hot bubble release agent (CaCO in micro slot array
3); Second step, will be with the above-mentioned Si disk of pattern and hot bubble release agent and Pyrex7740 Pyrex disk in air or vacuum Anodic anode linkage, make above-mentioned microflute and fluid channel sealing, form seal chamber; The 3rd step, by above-mentioned bonding, good disk is heated to 820 ℃ ~ 950 ℃ in air, and be incubated 0.5 ~ 10min, hot bubble release agent is because decomposes produces the normal pressure that gas forms in airtight cavity, makes on melten glass the formations spherical glass micro-cavity corresponding with described silicon microflute and the cylindrical glass fluid channel of connection spherical glass micro-cavity; The glass of controlling mould microflute top with time interval suction function downstream to groove in, form spacing and control protruding ring, heat is but to normal temperature, annealing obtains wafer-stage glass micro-cavity with 25% TMAH at 90 ℃ of conditions silica removal that goes down.The 4th step, by light-emitting diode (LED) chip attachment to the substrate that is prepared with silicon conductive through hole (TSV) and reflector; The 5th step, wafer level bonding: described wafer-stage glass micro-cavity and substrate are bondd; The 6th step is filled up glue by spacing control ring breach in light-emitting diode (LED) chip and wafer-stage glass micro-cavity gap, and solidifies, and realizes the wafer level packaging of LED.
In technique scheme, prepare described glass packages and adopt the positive pressure thermoforming method: on silicon wafer, wet etching forms the microcavity array of specific dimensions, and put into hot bubble release agent (as calcium carbonate) in microcavity, above-mentioned silicon wafer and Pyrex7740 glass wafer are carried out to bonding under vacuum condition, make glass wafer and above-mentioned specific pattern form seal chamber, the disk that bonding is good is heated to 820 ℃ ~ 950 ℃ under an atmospheric pressure, for example be chosen for 820 ℃, 850 ℃, 900 ℃, insulation 3 ~ 8min, for example can choose micro-: 4 min, 5 min, 6 min, glass after chamber external and internal pressure official post is softening blows afloat and forms the ball chamber outside seal chamber, cooling, stress relieving by annealing under normal pressure again, remove mould silicon, forming the back side corresponding with above-mentioned microcavity patterning is microcavity, front is lenticular glass packages.Described bonding is anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.In the 4th step, adopt conductive silver glue (the Ablebond 84-1LMISR4S of ablestik company, mix silver-colored conducting resinl) that LED chip is mounted on the TSV silicon substrate, condition of cure is: 175 ℃ of curing temperatures, curing time 45min.The coating method of fluorescent material is: in the silica gel of filling in the 6th step, evenly sneak into fluorescent material.Evenly sneak into a certain amount of fluorescent material (YAG:ce3+) at silica gel (DOW CORNING), and use point gum machine to carry out the injection of wafer level silica gel.In order to obtain good white light LEDs, the concentration of fluorescent material is respectively 2.0g/cm
3, 2.5 g/cm
3, 3.0 g/cm
3, 3.5 g/cm
3, 4.0 g/cm
3, 4.5 g/cm
3.Glass packages and the silicon wafer bonding employing low temperature glass solder bonding or metal bonding or the Adhesive bonding that are loaded with light-emitting diode (LED) chip.
Described LED encapsulation scheme can adopt silicon through hole technology to be gone between at the back side of silicon chip, in the silicon chamber of placing silicon chip, punches, and then metallization, cause the back side by through hole by the electrode above LED; Also can manufacture lead wire circuit on bonding face, it is drawn.
Claims (2)
1. the wafer-level encapsulation method of the adjustable light-emitting diode of a lens focus, is characterized in that, comprises the following steps:
The first step, go up etching LED lens mould microflute (2) array corresponding with light emitting diode matrix and control mould microflute (3) array around the spacing of LED lens mould microflute (2) at silicon wafer (1), LED lens mould microflute (2) is controlled mould microflute (3) with spacing and is not communicated with, and at LED lens mould microflute (2), places appropriate hot bubble release agent (4);
Second step, by the silicon wafer after etching (1) and Pyrex disk (5) anode linkage in a vacuum, form seal chamber;
The 3rd step, silicon wafer and Pyrex disk that above-mentioned bonding is good are heated to 820 ℃ ~ 950 ℃ in air, and be incubated 0.5 ~ 10min, hot bubble release agent produces gas because of decomposes, make to form spherical glass micro-cavity (6) corresponding to the melten glass of LED lens mould microflute (2), spacing is controlled the inside and outside pressure official post melten glass of mould microflute (3) and is inserted spacing control mould microflute (3) formation spacing control protruding ring (7), be cooled to normal temperature, annealing, remove silicon and obtain the LED package lens arra;
The 4th step, mount light-emitting diode chip for backlight unit (8) on the substrate (9) that is prepared with silicon conductive through hole and reflector;
The 5th step, wafer level bonding: described glass micro-cavity and substrate (9) are bondd;
The 6th step is filled up silica gel (10) by spacing control ring breach (71) in light-emitting diode chip for backlight unit and described glass micro-cavity gap, and solidifies, and realizes the wafer level packaging of light-emitting diode chip for backlight unit;
In above-mentioned steps, the coating method of fluorescent material is a kind of in following three kinds: the inner surface at spherical glass micro-cavity (6) after the 3rd step prepares glass micro-cavity applies fluorescent material, or after the 4th step chip attachment, fluorescent material is coated in to chip surface, or evenly sneak into fluorescent material in the silica gel of filling in the 6th step.
2. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, is characterized in that hot bubble release agent (4) is calcium carbonate powder.
3. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, it is characterized in that by fluid channel (21), being connected between described LED lens mould microflute (2), LED lens mould microflute (2) is greater than 3:1 with the width ratio of fluid channel (21), make the spacing of LED lens mould microflute (2) in being communicated with control mould microflute (3) array around among, spacing is communicated with respectively inside and outside controlling between mould microflute (3) array.
4. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, it is characterized in that by fluid channel (21), being connected between described LED lens mould microflute (2), diode lens mould microflute (2) is greater than 3:1 with the width ratio of fluid channel (21), and spacing is controlled being communicated with in the part around diode lens mould microflute (2) array outside of mould microflute (3) array.
5. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, is characterized in that described first step silicon wafer etching technics is wet etching, and the degree of depth is the 20-100 micron.
6. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, is characterized in that, described Pyrex are Pyrex7740 glass, and the condition of described anode linkage is: 400 ℃ of temperature, voltage: 600V.
7. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, it is characterized in that, the process conditions of annealing described in the 3rd step are: annealing region is in 510 ℃ ~ 560 ℃, and the annealing temperature retention time is 30min, then slowly air-cooled to normal temperature.
8. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, is characterized in that, in the 4th step, uses conductive silver glue or tin cream that light-emitting diode chip for backlight unit is mounted on substrate (9) by surface installation technique.
9. the wafer-level encapsulation method of the adjustable light-emitting diode of lens focus according to claim 1, it is characterized in that spherical glass micro-cavity packaging body and silicon substrate (9) the bonding employing low temperature glass solder bonding or metal bonding or the Adhesive bonding that are loaded with light-emitting diode chip for backlight unit in the 5th step.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201210018943 CN102569563B (en) | 2012-01-20 | 2012-01-20 | Wafer level packaging method of light emitting diode with adjustable lens focus |
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| WO2019020708A1 (en) * | 2017-07-28 | 2019-01-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mems mirror assembly and method for producing a mems mirror assembly |
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| CN103855259B (en) * | 2014-01-26 | 2017-09-08 | 上海瑞丰光电子有限公司 | LED encapsulation method |
| CN103956359A (en) * | 2014-05-19 | 2014-07-30 | 四川柏狮光电技术有限公司 | Single-ended power supply all-around LED lamp filament and manufacturing method thereof |
| TWI634953B (en) * | 2017-03-28 | 2018-09-11 | 財團法人工業技術研究院 | Glue dispensing device and glue dispensing method |
| CN113163703B (en) * | 2021-04-23 | 2021-11-30 | 深圳市健仕达电子有限公司 | LED chip mounter |
| CN114447197A (en) * | 2022-01-25 | 2022-05-06 | 金振华 | Preparation method of fly-eye array lens for LED integrated packaging |
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| CN101157435A (en) * | 2007-11-20 | 2008-04-09 | 东南大学 | Method for manufacturing wafer-level MEMS micro channel |
| CN101723308A (en) * | 2009-12-11 | 2010-06-09 | 东南大学 | MEMS wafer level vacuum packaging process |
| CN101734612A (en) * | 2009-12-18 | 2010-06-16 | 东南大学 | Manufacturing method of wafer level glass microcavity used for packaging MEMS |
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| JP2009289953A (en) * | 2008-05-29 | 2009-12-10 | Hitachi Ulsi Systems Co Ltd | Wafer-level package, wafer-level package manufacturing method, and mems device manufacturing method |
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| CN101157435A (en) * | 2007-11-20 | 2008-04-09 | 东南大学 | Method for manufacturing wafer-level MEMS micro channel |
| CN101723308A (en) * | 2009-12-11 | 2010-06-09 | 东南大学 | MEMS wafer level vacuum packaging process |
| CN101734612A (en) * | 2009-12-18 | 2010-06-16 | 东南大学 | Manufacturing method of wafer level glass microcavity used for packaging MEMS |
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