CN101894896A - Glass ball cavity encapsulation method of light emitting diode - Google Patents
Glass ball cavity encapsulation method of light emitting diode Download PDFInfo
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Abstract
The invention discloses a method for encapsulating a light emitting diode by using a glass lens cavity with high extracting rate and light beam collimation. The method comprises the following steps of: step 1, preparing a glass lens of a sealed light emitting diode chip on a glass wafer; step 2, reversely welding a chip: reversely welding the light emitting diode on a silicon substrate distributed with a lead A1; step 3, coating fluorescent powder: evenly coating a fluorescent powder layer on the periphery of the light emitting diode chip: step 4, filling silica gel in a gap between the light emitting diode chip and a glass ball cavity, performing anode bonding on the glass lens wafer and the silicon wafer carried with the light emitting diode chip to realize air-tightness encapsulation. The invention can realize white light emitting diode with even light intensity and has high emission rate of light rays; the encapsulation glass lens realizes the collimation of the light beam; the encapsulating reliability is very good; and the effective working time of the light emitting device is greatly prolonged.
Description
Technical field
The present invention relates to a kind of MEMS (microelectromechanical systems) encapsulation technology, relate in particular to a kind of glass ball cavity encapsulation method of light-emitting diode.
Background technology
The development of white light emitting diode (LED) technology has been brought us into the 4th generation illumination epoch.White light emitting diode (LED) illumination will replace current lighting technology with superiority such as its low energy, environmental protection.As lighting use, powerful white light emitting diode (LED) is by scientific research and enterprise's extensive concern, because light-emitting diode (LED) is in order to produce enough light intensity, operating current will be tried one's best greatly, and operating current has brought stern challenge for greatly the heat dissipation problem of light-emitting diode (LED) encapsulation.So, optical package structure by design white light emitting diode (LED), improve its light emission rate, can under certain electric current, obtain enough big light intensity, lens can be used to improve the collimation of light beam simultaneously, so must be useful on the lens that improve light emission rate in light-emitting diode (LED) encapsulating structure.The package lens structure will have good air-tightness simultaneously, because the chip affected by moisture can influence luminescent properties greatly.
Preparation is used for the lens of encapsulation LED (LED) for improving white light emitting diode (LED) luminous efficiency, and emergent ray is converged with beam collimation crucial effects.Now, transparent organic gel such as epoxy resin is widely used in the preparation of light-emitting diode (LED) lens fully, but it is bad with the lens light transmission that organic gel is made, and character instability, under the situation of being heated, work certain hour meeting variable color, light transmission becomes badly, and the organic substance moisture resistance is relatively poor simultaneously.
Summary of the invention
The purpose of this invention is to provide that a kind of process is simple, with low cost, the glass ball cavity encapsulation method of good reliability light-emitting diode.
The present invention adopts following technical scheme: a kind of glass ball cavity encapsulation method of light-emitting diode may further comprise the steps: the first step, the employing preparation back side on glass wafer is that microcavity, front are lenticular glass packages; Second step, chip attachment: LED chip is contained on the silicon wafer substrate; The 3rd step, fluorescent powder coating technique: fluorescent material is mixed with silica gel, and evenly be coated in light-emitting diode chip for backlight unit surface formation phosphor powder layer; In the 4th step, filling gel in light-emitting diode chip for backlight unit and glass ball cavity gap is undertaken bondingly by glass packages and the silicon wafer that is loaded with light-emitting diode chip for backlight unit, and make light-emitting diode chip for backlight unit be in the chamber at the described glass packages back side.
In the technique scheme, prepare described glass packages and adopt the positive pressure thermoforming method: etching forms the microcavity array of specific dimensions on silicon wafer, above-mentioned silicon wafer and the Pyrex7740 glass wafer that is carved with microflute carried out bonding under vacuum condition, make Pyrex7740 glass wafer and above-mentioned specific pattern form seal chamber, the disk that above-mentioned bonding is good is heated to 740 ℃～890 ℃ under an atmospheric pressure, insulation 3～8min, glass after chamber external and internal pressure official post is softening convexes to form sphere away from seal chamber, cooling, stress relieving by annealing under normal pressure again, remove mould silicon, formation is microcavity with the corresponding back side of above-mentioned microcavity patterning, the front is lenticular glass packages, and glass is Pyrex7740 glass, and described bonding is an anode linkage, process conditions are: 400 ℃ of temperature, voltage: 600V.In the 4th step, fill up gap between encapsulation LED chip and the glass packages with an amount of silica gel.The step that LED chip is loaded on the silicon wafer substrate is: at first make lead-in wire on silicon wafer, again light-emitting diode chip for backlight unit is contained on the silicon wafer substrate by the heat-conductivity conducting sticker, and the positive and negative electrode of light-emitting diode chip for backlight unit is connected with lead-in wire respectively.Glass packages and the silicon wafer bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit.Powder slurry normal plane coating technology is adopted in the coating of fluorescent material in the 3rd step.That patterning is a kind of in wet corrosion technique, reactive ion etching or the deep reaction ion etching on the described silicon wafer.Chip attachment adopts the method for flip chip bonding.
The present invention obtains following effect:
1. the encapsulating structure skin of light-emitting diode (LED) chip is not epoxy resin or silica gel among the present invention, but the lens microcavity that has adopted Pyrex glass to make encapsulates, because the Pyrex glassy phase, has good same photosensitiveness, high-temperature stability and sealing than organic material.The beam projecting rate of light-emitting diode (LED) chip of use glass lens microcavity encapsulation is higher like this, and operating current is bigger, and high-temperature resistance is strong, is difficult for wearing out, and anti-moisture has realized that more reliable and stable light-emitting diode (LED) encapsulates.With respect to the lens that employing reflux techniques such as silica gel are made, the positive pressure thermoforming method can be controlled the shape (by the shape of control silicon mould) of lens accurately, thereby more helps increasing the optical transmission rate; In addition, better with respect to the glass micro-cavity sphericity that other method forms, therefore, with the fluorescent material spin coating or adopt additive method to be coated on the inwall of glass micro-cavity will to make the photochromic difference of outgoing littler.
2. glass lens encapsulation LED (LED) chip that use goes out among the present invention, glass lens is to blow afloat glass ball cavity under the effect of microcavity external and internal pressure, smooth surface, Pyrex glass is for the percent of pass very high (＞90%) of visible light simultaneously, so glass lens has very high beam projecting rate, and lens have the effect that focuses on visible light, and the light beam visual angle of outgoing is less, can realize the collimation of light beam.In addition, because fluorescent material is coated in the inner surface from led chip glass micro-cavity far away, therefore make the energy density on led chip surface reduce, thereby reduce the working temperature of led chip, and then improve its reliability.
3. the present invention utilizes the glass micro-cavity of positive pressure thermoforming, and size can be adjustable from tens microns to several millimeters, therefore can encapsulate the led chip of multiple size; The glass micro-cavity height of moulding higher (height of overgauge silicon) therefore can be with the whole LED Chip Packaging in the chamber.Therefore, the present invention at first is assembled in surface of silicon substrate with led chip, and carries out lead-in wire, and then encapsulates with bonding technology.
4. make the glass lens microcavity among the present invention and adopt wet etching to process microflute at silicon face, technical process is simple and reliable, and is with low cost, can realize the wafer level manufacturing of glass lens microcavity.
5. the present invention makes the glass lens microcavity and adopts wet etching or dry etching, does not need the bigger degree of depth of etching, has reduced preparation time like this, has reduced cost.
6. adopt powder slurry normal plane coating technology among the present invention, obtained the plane fluorescent powder method of one deck good uniformity, thickness and controllable shapes like this at light-emitting diode (LED) chip surface, obtain the second best in quality white light.
7. the present invention is by putting into hot bubble release agent in the microflute of silicon, again under vacuum condition with silicon chip and Pyrex glass anode linkage, make glass preset a certain amount of hot bubble release agent in the annular seal space that forms behind the silicon bonding of microflute with having, hot bubble release agent high temperature is transferred out gas in the thermoforming process, under the effect of malleation (under forming temperature, air pressure inside is greater than external pressure), glass blows afloat to the outside and forms sphere (capillary effect makes the glass of molten state be sphere).Its principle is that according to The Ideal-Gas Equation: PV=nRT as can be known, under the uniform temperature, after hot bubble release agent was emitted gas fully, in closed chamber, the pressure of gas and airtight volume were inversely proportional to.Owing to the volume of closed chamber increases along with glass blows afloat outside the chamber, its pressure inside also progressively reduces, and inside and outside pressure is balance gradually.The moulding of glass lens microcavity is based on the inside and outside pressure balance of microcavity, therefore the shape of sphere and volume size all can calculate according to the amount that PV=nRT and hot bubble release agent are emitted gas, and do not need strict control glass viscosity and molding time, only need glass heats is got final product to molten state.With respect to for the viscosity and shape that molding time is controlled the glass lens microcavity of control glass, the inventive method is simpler, and cost is lower.
8. be carved with the silicon chip of microflute and the anode linkage of glass among the present invention and have very high intensity, the characteristics of good leak tightness are difficult for the generation leakage and cause the moulding failure in heating process.400 ℃ of temperature, under the bonding conditions of voltage direct current 600V, anode linkage can reach better sealing effectiveness.
9. in the 4th step, adopt an amount of silica gel to fill up gap between light-emitting diode (LED) chip and the glass packages, will make that the light extraction efficiency of chip is higher.
10. the annealing process that adopts among the present invention can effectively be eliminated Pyrex7740 glass and bear the stress that forms in the high temperature malleation forming process, thereby makes its strength and toughness higher.Annealing temperature is that temperature retention time is 30min in 550 ℃～570 ℃ scopes, slow then cool to room temperature.Under this condition, anneal, the stress of can effectively decorporating, can also make the shape of microcavity not have change substantially, and the too high encapsulation that easily causes the microcavity shape to change being unfavorable for the road, back of annealing temperature, low excessively annealing temperature then can't effectively be removed the glass internal stress.
11. adopting concentration among the present invention is silicon mould on 25% the TMAH solution removal glass lens microcavity, can remove silicon chip effectively like this and etching glass not, selecting silicon chip, glass ratio is 1000: 1.
12. the present invention adopts aluminum lead will realize that the signal on the chip draws, and can tolerate the high temperature (400 degrees centigrade) of anode linkage.In when sealing, aluminium belongs to centroid cubic crystal system, and quality is softer, is easy to generate distortion, therefore can be present within the bonded interface of glass and silicon and is not easy to rupture, thereby play electric action.
13. be used among the present invention carrying the silicon substrate surface of dress light-emitting diode (LED) chip owing to have thin oxide layer (thickness is 0.1 micron to 0.5 micron usually), play the effect (operating voltage of common chip is approximately tens volts) of insulation on the one hand, thin on the other hand silicon dioxide insulating layer can not influence anode linkage technology.Existing research shows that after oxidated layer thickness was greater than 0.5 micron, it is very difficult that anode linkage technology will become.At thickness is between the 0.2-0.4 micron, and the effect of anode linkage is better, and can play higher insulating effect, obtains than higher insulation voltage, adapts to packaged device kind more (operating voltage is higher).
14. the present invention prepares the Pyrex7740 glass suitable with the thermal coefficient of expansion of Si as the glass lens micro-cavity structure, because the coupling of the heat between silicon and the glass is fine, therefore encapsulates very little for the stress influence of light-emitting diode (LED).
15. use the silicon chip suitable among the present invention as the substrate that carries dress light-emitting diode (LED) chip with the glass lens thermal coefficient of expansion, after using anode linkage technology with glass lens disk and the sealing of light-emitting diode (LED) silicon substrate like this, can be because of the difference of thermal coefficient of expansion, under thermal shock and produce gas leakage, the airtight reliability of the encapsulation of assurance.
In MEMS manufacturing technology field, use the MEMS micro-processing technology can on silicon chip, closely process circular microflute, use Pyrex7740 glass (a kind of glass that contains alkali ion then, Pyrex is the product brand of Corning company) under vacuum condition, carry out bonding realization sealing with the silicon chip that is carved with microflute (placing hot bubble release agent in the groove), heating and melting prepares glass lens, owing to discharge gas in the microcavity, so glass lens is blown afloat outside the chamber, so just can prepare the good glass lens of light transmittance.Use glass lens can avoid above problem effectively, glass has very high percent of pass as inorganic material to visible light, and thermal stability is fine, can ageing failure, and the humidity resistance excellence.
Description of drawings
Fig. 1 is the figuratum silicon wafer schematic cross-section of etching
Fig. 2 is the disk schematic cross-section behind figuratum silicon wafer of etching and the Pyrex7740 glass wafer bonding
Fig. 3 is the schematic cross-section after silicon wafer and the hot briquetting of glass wafer bonding pad
Fig. 4 is the schematic cross-section of glass lens microcavity encapsulation LED (LED) chip
Embodiment
A kind of glass ball cavity encapsulation method of light-emitting diode may further comprise the steps: the first step, the employing preparation back side on glass wafer is that microcavity, front are lenticular glass packages; This glass packages adopts the preparation of positive pressure thermoforming method, its size is more bigger than light-emitting diode (LED) chip of required encapsulation, height is greater than the thickness of led chip, the concrete visible embodiment 3-4 of preparation method, second step, chip attachment: light-emitting diode (LED) chipset is contained on the silicon wafer substrate; Assembling process comprises drawing of led chip, silicon wafer is provided with lead-in wire, lead-in wire also can be by the silicon through hole guiding back side, the 3rd step, fluorescent powder coating technique: fluorescent material (YAG:ce3+) is mixed with silica gel (the seven board WH-7 type organosilicon sealants of a specified duration that the special adhesive of Nanjing Heineken Co., Ltd produces), and evenly being coated in light-emitting diode (LED) chip surface formation phosphor powder layer, thickness is according to the needs of led chip; The 4th step, filling gel in light-emitting diode (LED) chip and glass ball cavity gap, undertaken also bondingly by glass packages and the silicon wafer that is loaded with light-emitting diode (LED) chip, make light-emitting diode (LED) chip be in the chamber at the described glass packages back side.
In the technique scheme, prepare described glass packages and adopt the positive pressure thermoforming method: etching forms the microcavity array of specific dimensions on silicon wafer, and in microcavity, put into hot bubble release agent (as calcium carbonate, titantium hydride), the calcium carbonate powder of difference amount is coated in the microcavity, 0.1mg for example, 0.5mg, 1mg, 1.5mg, 2mg, above-mentioned silicon wafer and the Pyrex7740 glass wafer that is carved with microflute carried out bonding under vacuum condition, make Pyrex7740 glass wafer and above-mentioned specific pattern form seal chamber, the disk that above-mentioned bonding is good is heated to 740 ℃～890 ℃ under an atmospheric pressure, for example be chosen for 780 ℃, 820 ℃, 850 ℃, insulation 3～8min, for example can choose little: 4min, 5min, 6min, the glass after chamber external and internal pressure official post is softening blows afloat outside seal chamber and forms the ball chamber, cooling, stress relieving by annealing under normal pressure is removed mould silicon again, and formation is microcavity with the corresponding back side of above-mentioned microcavity patterning, the front is lenticular glass packages, glass is Pyrex7740 glass, described bonding is an anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.In the 4th step, fill up the gap between encapsulation LED (LED) chip and the glass packages with an amount of silica gel (the seven board WH-7 type organosilicon sealants of a specified duration that the special adhesive of Nanjing Heineken Co., Ltd produces).The step that light-emitting diode (LED) chipset is loaded on the silicon wafer substrate is: at first on silicon wafer, make lead-in wire, again with light-emitting diode (LED) chip by heat-conducting glue (ablestik company
84-1LMISR4S mixes silver-colored conducting resinl) be mounted on the silicon wafer substrate, and the positive and negative electrode of light-emitting diode (LED) chip is connected with lead-in wire respectively.Glass packages and the silicon wafer bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode (LED) chip.Powder slurry normal plane coating technology is adopted in the coating of fluorescent material in the 3rd step.That patterning is a kind of in wet corrosion technique, reactive ion etching or the deep reaction ion etching on the described silicon wafer.
The glass ball cavity encapsulation method of 2 one kinds of light-emitting diodes of embodiment may further comprise the steps:
The first step, the glass lens array of using at Pyrex7740 preparation sealed light emitting diode on glass (LED) chip; Hot bubble release agent is emitted gas under the high temperature, blows afloat outside the silicon microflute during owing to glass melting and forms convex lens, has formed microcavity below lens simultaneously, light-emitting diode (LED) chip can be placed and is sealed in the microcavity under the glass lens.The preparation method of glass lens microcavity sees the embodiment of back of the present invention.The embodiment of back of the present invention has described the just molded method for preparing glass lens of utilizing.The glass micro-cavity of preparing in the described method of the embodiment of present embodiment back, adopt different microflute depth-to-width ratios, the different value that also adopts of the time of glass ware forming and temperature simultaneously, the glass lens controllable shapes of producing like this, have different focal lengths, can and become molding time to control the glass lens focal length by control microflute depth-to-width ratio, glass ware forming temperature.Simultaneously among the glass lens embodiment of back by in glass and microflute, sealing a certain amount of hot bubble release agent, make the ball chamber of blowing afloat different size in the molten glass molded lens process, Zhi Bei glass lens smooth surface like this, light transmission is fine.Re-use concentration afterwards and be 25% TMAH solution silicon chip is removed, etching temperature is 90～95 ℃, and this corrosive liquid does not corrode Pyrex glass.
Second step, flip-chip: have the thick A1 layer of sputter on the silicon substrate disk of thin silicon dioxide layer, according to the lead-in wire of the A1 on light-emitting diode (LED) the chip power utmost point distribution etch silicon substrate, the A1 lead-in wire is drawn microcavity with the electrode of light-emitting diode in the glass micro-cavity (LED) chip on the silicon substrate then.Silicon dioxide layer can prepare with wet oxidation or dry oxidation, and thickness is the 0.2-0.4 micron, and the thickness of the A1 lead-in wire of sputter is 0.1-0.5um, for example chooses 0.3um.Then light-emitting diode (LED) chip is welded on the silicon substrate that is furnished with the A1 lead-in wire with solder-ball flip.Use face-down bonding technique, light-emitting diode (LED) chip is just by positive electrode and soldered ball heat conduction like this, and by the sapphire heat conduction of poor thermal conductivity, performance is greatly improved when comparing formal dress; Simultaneously flip chip technology makes light pass through the sapphire outgoing of light-emitting diode (LED) die bottom surface, has improved the exitance of light.
The 3rd step, fluorescent powder coating technique: the water soluble photosensitive of using in the powder slurry method is by organic colloid (polyvinyl alcohol, PVA), emulsion, deionized water, auxiliary agent (dispersant etc.) and fluorescent material (YAG:ce3+) are formed, the suspension (being the powder slurry) that will contain the fluorescent material photoresists is coated on light-emitting diode (LED) chip, in the darkroom after the drying, energized, utilize blue light-emitting diode (LED) chip light emitting, organic colloid and emulsion generation photochemical reaction, make colloid and emulsion crosslinked, generate the polymer of insoluble in water, in developer solution, develop then, have water miscible organic colloid and emulsion and be dissolved in the developer solution, stay our required phosphor powder layer pattern.Even and the controllable thickness of the fluorescent material thickness of this method preparation.
The 4th step, in the glass ball cavity for preparing, to inject silica gel, and the low temperature glass solder bonding is aimed at, carried out to the silicon substrate that upside-down mounting is welded with light-emitting diode (LED) chip with glass ball cavity, realization is to the air-tight packaging of light-emitting diode (LED) chip.Perhaps adopt epoxy resin to bond, also can adopt metal bonding to seal.If adopt metal bonding, need on silicon wafer and sheet glass, prepare underlying metal, then with the eutectic solder of routine bond (for example ashbury metal).
In the technique scheme, the light of light-emitting diode (LED) chip emission is got on the fluorescent material and will be converted white light to, because glass lens is convex lens, can play optics and converge effect, the exitance of light is improved like this, and light beam converge the back angle of departure diminish, realized the collimation of light beam.
The manufacture method of 3 one kinds of wafer-level glass lens of embodiment microcavity may further comprise the steps:
The first step, utilize the Si micro fabrication to go up etching and form specific pattern at Si disk (for example 4 inches disks), the micro fabrication of patterning is a wet corrosion technique on the described Si disk, perhaps dry method inductively coupled plasma (ICP) etching technics, a kind of in reactive ion etching or the deep reaction ion etching, this pattern can be square or the circular recess array, also can be a plurality of different figures, (see on the three-dimensional that in fact carving specific pattern is cutting on silicon chip, on the two dimension pattern), the depth-to-width ratio of microflute can be less than 1: 1, also can be greater than 1: 1, for example: 2: 1,3: 1,4: 1,7: 1,10: 1,15: 1,20: 1,25: 1, the higher glass micro-cavity of depth-to-width ratio will provide more rheology space to glass, thereby for the size of package cavity provides more selection
Second step, a certain amount of calcium carbonate (or titantium hydride) will be placed in the microflute of above-mentioned Si disk, for example quality is 0.1mg, 0.5mg, 1mg, 1.5mg, 2mg, (market can be buied for a kind of brand of Pyrex, U.S. CORNING-corning company production with the Pyrex7740 glass wafer again, usually through polishing, its size is identical with the Si disk) under vacuum condition, carry out bonding, make Pyrex7740 above-mentioned specific pattern on glass form seal chamber, bonding surface should keep highly cleaning and minimum surface roughness before bonding.
In the 3rd step, the disk that above-mentioned bonding is good is heated to 740 ℃～890 ℃ under an atmospheric pressure, be incubated 3～8min under this temperature, for example temperature can be chosen for 750 ℃, and 770 ℃, 780 ℃, 790 ℃, 820 ℃, 830 ℃, 840 ℃, 845 ℃, 850 ℃, 855 ℃, 860 ℃, 870 ℃, 880 ℃, 890 ℃, insulation 3～8min, time can be chosen for: 3.2min, 3.5min, 3.8min, 4min, 4.2min, 4.4min, 4.8min, 6min, 7min, 7.5min the glass after chamber external and internal pressure official post is softening blows afloat outside seal chamber and forms the ball chamber, thereby forms and the corresponding micro-cavity structure of above-mentioned microcavity patterning, being cooled to lower temperature, as 20-25 ℃, is 22 ℃ for example, with above-mentioned disk stress relieving by annealing under normal pressure, this normal pressure is meant an atmospheric pressure, and in the technique scheme, described Si disk and Pyrex7740 glass surface bonding technology are anode linkage, the typical process condition is: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 550 ℃～570 ℃, and annealing temperature can be chosen for 550 ℃, and 555 ℃, 560 ℃, 565 ℃, the annealing temperature retention time is 30min, and is slowly air-cooled then to normal temperature (for example 25 ℃).
Preferred version of the present invention is as follows: in the technique scheme, the micro fabrication of patterning can be wet corrosion technique on the described silicon wafer.The method of cutting can be a kind of with in reactive ion etching or the deep reaction ion etching on the silicon wafer of described Si disk.Described silicon wafer and Pyrex7740 glass surface bonding technology are anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 550 ℃～570 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to normal temperature then.The pattern of etching is the pattern greater than 1: 1 depth-to-width ratio in the first step.The pattern depth-to-width ratio of etching is 20: 1 in the first step.
The manufacture method of embodiment 4 wafer-level glass lens microcavitys
A kind of manufacture method of wafer-level glass lens microcavity may further comprise the steps:
The first step is utilized 25% TMAH solution wet etching method, and etching forms specific pattern (in fact seeing on the three-dimensional, is cutting on silicon chip, is pattern on the two dimension) on 4 inches Si disks, and this pattern is the square groove array, the polishing of silicon chip process,
Second step, a certain amount of hot bubble release agent will be placed in the microflute of above-mentioned Si disk, (calcium carbonate or titantium hydride), again with same size, (4 inches) Pyrex7740 glass wafer, (a kind of brand of Pyrex, U.S. CORNING-corning company produces, market can be buied, process polishing) under vacuum condition, carries out bonding, be bonded on the EVG-501 anode linkage machine and carry out, make Pyrex7740 above-mentioned specific pattern on glass form seal chamber, keep highly cleaning and minimum surface roughness, to satisfy the requirement of conventional anode linkage
The 3rd step, the disk that above-mentioned bonding is good is heated to 850 ℃ under an atmospheric pressure, under this temperature, be incubated 4min, glass after chamber external and internal pressure official post is softening blows afloat outside seal chamber and forms the ball chamber, thereby form and the corresponding micro-cavity structure of above-mentioned microcavity patterning, be cooled to 25 ℃ of normal temperature, with above-mentioned disk stress relieving by annealing under an atmospheric pressure, in the technique scheme, former of described Si is an anode linkage with Pyrex7740 glass surface bonding technology, process conditions are: 400 ℃ of temperature, voltage: 600V.The process conditions of thermal annealing are described in the 3rd step: annealing region is in 550 ℃～570 ℃, and annealing temperature can be chosen for 560 ℃, and the annealing temperature retention time is 30min, and is slowly air-cooled to 25 ℃ of normal temperature then.
The present invention passes through MEMS processing and manufacturing technology: the anode linkage technology of Si sheet and Pyrex7740 glass, utilize vacuum malleation Technology for Heating Processing again, produce wafer level Pyrex7740 glass lens microcavity with pristine glass surface roughness, technical maturity, technology is reliable.Molten glass has very low roughness, can reach tens nanometers usually even below several nanometer.
The present invention can reserve scribe line at the same time on above-mentioned disk, after being processed to form, can obtain a plurality of different glass lens microcavitys along scribe line with each figure scribing, thereby realizes the wafer level making of microcavity, reduces the cost of this technology.The glass lens microcavity that obtains can encapsulate the MEMS device by modes such as bondings.
Claims (10)
1. the glass ball cavity encapsulation method of a light-emitting diode is characterized in that, may further comprise the steps: the first step, adopt the glass packages (4) for preparing spherical glass micro-cavity on glass wafer;
Second step, chip attachment: light-emitting diode chip for backlight unit (9) is assembled on the silicon wafer substrate (8);
The 3rd step, fluorescent powder coating technique: fluorescent material is mixed with silica gel, and (9) surface forms phosphor powder layer (7) evenly to be coated in light-emitting diode chip for backlight unit;
The 4th step, filling gel (10) in light-emitting diode chip for backlight unit and glass ball cavity gap, undertaken bondingly by glass packages (4) and the silicon wafer (8) that is loaded with light-emitting diode chip for backlight unit (9), and make light-emitting diode chip for backlight unit be in the chamber at described glass packages (4) back side.
2. the glass ball cavity encapsulation method of light-emitting diode according to claim 1, it is characterized in that, prepare described glass packages (4) and adopt the positive pressure thermoforming method: go up the microcavity array (2) that etching forms specific dimensions at silicon wafer (1), in microcavity array, apply hot bubble release agent (6) the above-mentioned silicon wafer (1) that is carved with microflute is carried out bonding with Pyrex7740 glass wafer (3) under vacuum condition, make Pyrex7740 glass wafer and above-mentioned specific pattern form seal chamber (5), the disk that above-mentioned bonding is good is heated to 740 ℃～890 ℃ under an atmospheric pressure, insulation 3～8min, at high temperature, hot bubble release agent is emitted gas, pressure in the chamber is greater than external pressure, glass after chamber external and internal pressure official post is softening convexes to form sphere away from annular seal space (5), cooling, stress relieving by annealing under normal pressure again, remove mould silicon, formation is microcavity with the corresponding back side of above-mentioned microcavity patterning, the front is lenticular glass packages (4).
3. the glass ball cavity encapsulation method of light-emitting diode according to claim 2 is characterized in that, glass is Pyrex7740 glass, and described bonding is an anode linkage, and process conditions are: 400 ℃ of temperature, voltage: 600V.
4. the glass ball cavity encapsulation method of light-emitting diode according to claim 2 is characterized in that, puts into hot bubble release agent (6) in microcavity array, and the temperature that discharges gas is more than 700 ℃.
5. the glass ball cavity encapsulation method of light-emitting diode according to claim 1 is characterized in that, in the 4th step, fills up gap between light-emitting diode chip for backlight unit and the glass packages (4) with an amount of silica gel (10).
6. the glass ball cavity encapsulation method of light-emitting diode according to claim 1, it is characterized in that, the step that light-emitting diode chip for backlight unit (9) is assembled in silicon wafer substrate (8) is: at first make lead-in wire on silicon wafer, again light-emitting diode chip for backlight unit is mounted on the silicon wafer substrate by heat-conducting glue, and the positive and negative electrode of light-emitting diode chip for backlight unit is connected with lead-in wire respectively.
7. the glass ball cavity encapsulation method of light-emitting diode according to claim 1, it is characterized in that glass packages (4) and silicon wafer (8) the bonding employing low temperature glass solder bonding or metal bonding or the binding agent bonding that are loaded with light-emitting diode chip for backlight unit (9).
8. the glass ball cavity encapsulation method of light-emitting diode according to claim 1 is characterized in that, powder slurry normal plane coating technology is adopted in the coating of fluorescent material in the 3rd step.
9. the glass ball cavity encapsulation method of light-emitting diode according to claim 2 is characterized in that a kind of in wet corrosion technique, reactive ion etching or the deep reaction ion etching of patterning on the described silicon wafer.
10. the glass ball cavity encapsulation method of light-emitting diode according to claim 1 is characterized in that, chip attachment adopts the method for flip chip bonding.
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| CN 201010200253 CN101894896A (en) | 2010-06-13 | 2010-06-13 | Glass ball cavity encapsulation method of light emitting diode |
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Cited By (8)
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| CN102683559A (en) * | 2011-03-17 | 2012-09-19 | 隆达电子股份有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN102701142A (en) * | 2012-05-28 | 2012-10-03 | 中国科学院上海微系统与信息技术研究所 | Wafer-integrated micro-lens optical system manufacturing method and apparatus structure |
| CN104576414A (en) * | 2014-12-26 | 2015-04-29 | 北京时代民芯科技有限公司 | Moisture-resistant protection technological method for flip chip bonding |
| CN104868040A (en) * | 2011-05-27 | 2015-08-26 | 台湾积体电路制造股份有限公司 | Systems and methods providing semiconductor light emitters |
| CN106025044A (en) * | 2016-04-19 | 2016-10-12 | 苏州星烁纳米科技有限公司 | Wavelength conversion device, backlight unit, and display device |
| CN104078552B (en) * | 2014-05-21 | 2017-01-25 | 深圳莱特光电股份有限公司 | Infrared light-emitting diode |
| CN111146315A (en) * | 2020-02-19 | 2020-05-12 | 华引芯（武汉）科技有限公司 | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof |
| CN117133851A (en) * | 2023-10-26 | 2023-11-28 | 罗化芯显示科技开发(江苏)有限公司 | LED packaging diaphragm and LED packaging structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102683559A (en) * | 2011-03-17 | 2012-09-19 | 隆达电子股份有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
| CN104868040A (en) * | 2011-05-27 | 2015-08-26 | 台湾积体电路制造股份有限公司 | Systems and methods providing semiconductor light emitters |
| CN102701142A (en) * | 2012-05-28 | 2012-10-03 | 中国科学院上海微系统与信息技术研究所 | Wafer-integrated micro-lens optical system manufacturing method and apparatus structure |
| CN102701142B (en) * | 2012-05-28 | 2015-04-22 | 中国科学院上海微系统与信息技术研究所 | Wafer-integrated micro-lens optical system manufacturing method and apparatus structure |
| CN104078552B (en) * | 2014-05-21 | 2017-01-25 | 深圳莱特光电股份有限公司 | Infrared light-emitting diode |
| CN104576414A (en) * | 2014-12-26 | 2015-04-29 | 北京时代民芯科技有限公司 | Moisture-resistant protection technological method for flip chip bonding |
| CN104576414B (en) * | 2014-12-26 | 2017-12-01 | 北京时代民芯科技有限公司 | A kind of flip chip bonding humidity process for protecting method |
| CN106025044A (en) * | 2016-04-19 | 2016-10-12 | 苏州星烁纳米科技有限公司 | Wavelength conversion device, backlight unit, and display device |
| CN106025044B (en) * | 2016-04-19 | 2019-07-26 | 苏州星烁纳米科技有限公司 | Wavelength conversion devices, back light unit and display device |
| CN111146315A (en) * | 2020-02-19 | 2020-05-12 | 华引芯（武汉）科技有限公司 | Fully-inorganic packaged inverted UV-LED device and manufacturing method thereof |
| CN117133851A (en) * | 2023-10-26 | 2023-11-28 | 罗化芯显示科技开发(江苏)有限公司 | LED packaging diaphragm and LED packaging structure |
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Application publication date: 20101124 |