CN206322725U - A kind of quantum spot white light LED device - Google Patents
A kind of quantum spot white light LED device Download PDFInfo
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- CN206322725U CN206322725U CN201621300460.7U CN201621300460U CN206322725U CN 206322725 U CN206322725 U CN 206322725U CN 201621300460 U CN201621300460 U CN 201621300460U CN 206322725 U CN206322725 U CN 206322725U
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Abstract
The utility model discloses a kind of quantum spot white light LED device, include flip-chip, quantum dot layer, transparent encapsulated layer, reflecting layer and electrode layer；The upper surface of flip-chip is provided with groove, and the inner surface of groove is provided with the first lines, and quantum dot layer is in groove；Electrode layer is located at the bottom of flip-chip；The side wall of the side wall of reflecting layer covers flip-chip, the non-recessed region of the upper surface of flip-chip and electrode layer, reflecting layer is also filled up between the electrode of electrode layer；The upper surface in reflecting layer and inwall are provided with the second lines；The exposed region of transparent encapsulated layer coated quantum dots layer and the upper surface in reflecting layer.For the utility model, the air-tightness of product is good, thermal diffusivity is good and reliability is high, with high-color rendering；And for its preparation method, encapsulation link is eliminated, preparation is simple, ripe, and preparation efficiency is high.
Description
Technical field
The utility model belongs to light emitting diode (LED) technical field, and in particular to a kind of quantum spot white light LED device.
Background technology
LED (Light Emitting Diode, light emitting diode), is the semiconductor light electrical equipment for converting electrical current into luminous energy
Part, belongs to one kind of optoelectronic semiconductor.The chip that the core of light emitting diode is made up of P-type semiconductor and N-type semiconductor,
There are a transition zone, referred to as P-N junction between P-type semiconductor and N-type semiconductor.In the PN junction of some semi-conducting materials, note
The minority carrier entered can in the form of light discharge unnecessary energy with majority carrier compound tense, so that electric energy is straight
Switch through and be changed to luminous energy.PN junction adds backward voltage, and minority carrier is difficult to inject, therefore does not light.It is this to utilize pouring-in electroluminescent hair
The diode that light principle makes is generally called LED light emitting diode.
It is to excite YAG powder by blue light that traditional LED, which exempts from encapsulation technology, and it is low and luminous that it has photochromic impure, colour gamut
The low problems of efficiency, and quanta point material can be fabricated to the different glow colors of generation by grain-size size
Fluorescent material, have the advantages that luminous efficiency is high, luminous excitation is high, light transmittance is good.Therefore, quanta point material is introduced
It is imperative among encapsulation technology that LED exempts from, and current widespread practice is as follows：
(1) quantum dot fluorescence powder is mixed into silica gel material system, be coated in above chip, but there is solidification not in this method
The problems such as good and poor air-tightness.
(2) quantum dot is encapsulated in glass tube or is fabricated to quantum dot film, such as：1. Application No.
201510226918.2 Chinese patent discloses a kind of quantum dot encapsulation pipe clamping device, backlight module, and it discloses quantum
Point is located in hollow package pipe；2. Authorization Notice No. discloses a kind of light emitting diode for CN203521468U Chinese patent,
The light emitting diode includes a quantum dot film being arranged on encapsulating material, and the quantum dot film is transparent comprising two
In sheet material and the first type quantum dot, Second-Type quantum dot and the 3rd type quantum dot that are arranged between two clear sheets
One or more combinations；3. Application No. 201510315996.X Chinese patent discloses a kind of quantum dot light emitting device and the back of the body
Optical mode group, it includes the quantum dot film comprising multiple quantum dots；4. the Chinese patent of Application No. 201510311890.2 is public
A kind of quantum dot back light source structure and display device are opened, the quantum dot back light source structure includes LED light source, the LED
The light path of light source is provided with quantum dot film and light guide plate, the quantum dot film and is dispersed with red light quantum point.But, by quantum dot
Be encapsulated in pipe or be made quantum dot film there are problems that thermal diffusivity it is bad,.
Utility model content
The utility model is makes up the deficiencies in the prior art, on the one hand there is provided a kind of quantum spot white light LED device, and it will
Quanta point material and chip are directly in conjunction with being truly realized wafer-level packaging, with high-color rendering, and air-tightness is good, thermal diffusivity
It is good, LED reliability and service life has been significantly increased.
The utility model is reaches its purpose, and the technical scheme of use is as follows：
A kind of quantum spot white light LED device, it is characterised in that：
Include flip-chip, quantum dot layer, transparent encapsulated layer, reflecting layer and electrode layer；
The upper surface of the flip-chip is provided with groove, and the inner surface of the groove is provided with the first lines, the quantum dot
Layer is in the groove；
The electrode layer is located at the bottom of the flip-chip；
The side wall of flip-chip described in the reflecting layer covers, the non-recessed region of the upper surface of the flip-chip and
The side wall of the electrode layer, the reflecting layer is also filled up between the electrode of the electrode layer；The upper surface in the reflecting layer and
Inwall is provided with the second lines；
The transparent encapsulated layer coats the exposed region of the quantum dot layer and the upper surface in the reflecting layer.
Further, the side wall of the groove is stepped；The quantum dot layer is located at the centremost groove in place
Interior, the transparent encapsulated layer coats exposed region, the upper surface of the flip-chip and the reflection of the quantum dot layer
The upper surface of layer.
Further, the bottommost of the groove is provided with layer of silica gel, and the quantum dot layer is adhered to by the layer of silica gel
In the groove.
Further, the material of the transparent encapsulated layer is silica gel.
Further, the material in the reflecting layer is the material for having high thermal conductivity and high reflectance concurrently.
Further, the flip-chip includes epitaxial substrate, N-type epitaxy layer, luminescent layer and p-type epitaxial layer；Institute
State epitaxial substrate, the N-type epitaxy layer, the luminescent layer and the p-type epitaxial layer from it is upper it is outer under be cascading, it is described recessed
Groove is located at the upper surface of the epitaxial substrate.
Further, the epitaxial substrate is sapphire sheet.
The utility model accordingly provides a kind of preparation method of quantum spot white light LED device on the other hand, and it is exempted from
Go to encapsulate link, and directly use the semiconductor fabrication process of existing relative maturity, i.e., preparation is simple, ripe, system
Standby efficiency high, it is characterised in that comprise the following steps：
S1：Flipped light emitting unit is made, array type groove is made in the upper surface of the flipped light emitting unit, described recessed
The inner surface of groove etches the first lines；
S2：The flipped light emitting unit, which is cut on many flip-chips, each flip-chip, to be had described in one
Groove, electrode layer is made in the bottom of each flip-chip；
S3：By many flip-chips with array bonding on temporary base, between the adjacent flip-chip
Be equipped with gap, the upper table of the flip-chip up, between the flip-chip, the flip-chip upper surface it is non-
Reflecting layer is filled between the electrode of groove area and the electrode layer；
S4：The second lines is etched in the upper surface in the reflecting layer and inwall；
S5：Quantum dot layer is set in the groove；
S6：Transparent encapsulated layer is coated in the upper surface in the upper surface of the quantum dot layer, the reflecting layer and is solidified；
S7：Cutting, removal temporary base, isolated many quantum spot white light LED devices.
Further, in the step S5, in the first sprayed silicon glue-line of the bottommost of the groove and solidify, it is then described
Quantum dot layer is adhered in the groove by the layer of silica gel.
Further, in the step S1, the array type groove is using 3D etchings, 3D printing shaping or punching press
Technique etching is formed, and first lines is formed using 3D etchings, 3D printing shaping or Sheet Metal Forming Technology etching；In the step
In rapid S4, second lines is formed using 3D etchings, 3D printing shaping or Sheet Metal Forming Technology etching；In the step S6,
The transparent encapsulated layer is formed using the coating of Molding techniques.
Relative to prior art, the utility model has following Advantageous Effects：
(1) a kind of quantum spot white light LED device provided for the utility model：1. chip manufacturing process, i.e. core are utilized
Chip level makes quantum dot light conversion layer, by quanta point material and chip directly in conjunction with eliminating encapsulation link, be truly realized crystalline substance
Circle level encapsulation, and save preparation cost；2. the first lines is provided with the surface (being specially the inner surface of groove) of flip-chip, increased
Big contact area of the quantum dot layer with flip-chip (being specially groove) so that the connection of quantum dot layer is more firm, effectively
Ground improves quantum dot LED reliability and service life；3. the upper surface in reflecting layer and inwall are provided with the second lines, increase
The contact area of transparent encapsulated layer and reflecting layer, the connection of the two is more firm so that the encapsulating structure of quantum dot layer has
Higher sealing, and the circulation path of steam and oxygen is extended, so as to avoid steam and oxygen to quanta point material
Corrode, chemical stability is good, and then quantum dot LED reliability and service life has been significantly increased；4. quantum dot layer
Thinner, with high-color rendering, and light-emitting area is small, easily with lens, is not likely to produce yellow circle, photochromic purer；5. upside-down mounting is comprised only
Chip, quantum dot layer, transparent encapsulated layer, reflecting layer and electrode layer, structure thermal diffusivity are good, be conducive to improve LED reliability and
Service life.
(2) a kind of quantum spot white light LED device preparation method that the utility model is provided, removes encapsulation link from, saves
Cost of manufacture, and the semiconductor fabrication process of existing relative maturity is used, there is the ability for preparing sample completely, and
Any highly difficult new technology is not increased.In other words, its preparation is simple, ripe, improving quantum spot white light LED device
Preparation efficiency can be significantly increased while the reliability and high-color rendering of part, preparation cost is advantageously reduced.
In summary, a kind of quantum spot white light LED device that the utility model is provided can be widely applied to LED photographs
The technical fields such as bright, backlight, with very high market value.
Brief description of the drawings
Fig. 1 is a kind of structural representation (cut away view) of single quantum spot white light LED device described in embodiment 1；
Fig. 2 is that the top view of single quantum spot white light LED device described in embodiment 1 (sets quantum dot layer, coating transparent
Before encapsulated layer)；
Fig. 3 is a kind of schematic diagram of preparation flow of single quantum spot white light LED device described in embodiment 1；
Fig. 4 is a kind of structural representation (cut away view) of single quantum spot white light LED device described in embodiment 2；
Fig. 5 is that the top view of single quantum spot white light LED device described in embodiment 2 (sets quantum dot layer, coating transparent
Before encapsulated layer).
Reference：
1 (or 2), quantum spot white light LED device；11st, flip-chip；111st, groove；1111st, the first lines；1112nd, it is in
The groove in bosom；112nd, epitaxial substrate；113rd, N-type epitaxy layer；114th, luminescent layer；115th, p-type epitaxial layer；12nd, quantum dot layer；
13rd, transparent encapsulated layer；14th, reflecting layer；141st, the second lines；15th, electrode layer；16th, layer of silica gel.
Embodiment
Many details are elaborated in the following description to fully understand the utility model.But this practicality is new
Type can be implemented with the other modes for being much different from this description, and those skilled in the art can be without prejudice to the utility model
Similar popularization is done in the case of intension, therefore the utility model is not limited by following public specific embodiment.
Embodiment 1
Present embodiment discloses a kind of quantum spot white light LED device 1, as shown in Figure 1, 2, include flip-chip 11, tool
There are quantum dot layer 12, transparent encapsulated layer 13, reflecting layer 14 and the electrode layer 15 of good light transformation.
The upper surface of flip-chip 11 is provided with groove 111, and the inner surface of groove 111 is provided with the first lines 1111 (wherein side
Respectively figure does not embody the first lines 1111 on wall), quantum dot layer 12 is in groove 111.Wherein, the structure of groove 111 is set
Count so that quantum dot layer 12 is easier to set, and be difficult play, i.e. groove 111 and position-limiting action is played to quantum dot layer 12, so that
Allow quantum dot layer 12 to be made very thin, and then make it that LED product has high-color rendering, it is photochromic also more pure；First line
The design on road 1111 is to increase the contact area of quantum dot layer 12 and groove 111 so that quantum dot layer 12 and groove 111
With reference to more firm, be conducive to improving the reliability of LED product.
Electrode layer 15 is located at the bottom of flip-chip 11, and as input electrode, its is same as the prior art, repeats no more.
Reflecting layer 14 coats side wall, the non-recessed region of the upper surface of flip-chip 11 and the electrode layer of flip-chip 11
15 side wall, reflecting layer 14 is also filled up between the electrode of electrode layer 15, then light reflection effect is played in reflecting layer 14, and so
Structure design for traditional package support, thermal diffusivity more preferably so that drastically increase the reliability of product with
And service life；(the second lines 141 wherein on inwall is respectively schemed provided with the second lines 141 for the upper surface in reflecting layer 14 and inwall
Do not embody), effectively increase the surface area in reflecting layer 14 so that the combination in transparent encapsulated layer 13 and reflecting layer 14 is more firm
Gu, effectively ensureing the encapsulating structure of product has higher sealing, and also extends the circulation path of steam and oxygen,
It efficiently avoid the erosion of steam and oxygen to quanta point material.
The exposed region of the coated quantum dots of transparent encapsulated layer 13 layer 12 and the upper surface in reflecting layer 14 so that transparent envelope
Dress layer 13 both played effective light transmission effect, quantum dot layer 12 can be sealed well again, it is to avoid steam and oxygen infiltration and
Cause the material corrosion of quantum dot layer 12.
In the present embodiment, as shown in Fig. 2 the first lines 1111, the second lines 141 are in concentric rectangles shape.However, it is desirable to
Illustrate, in the utility model, the first lines 1111, the shape of the second lines 141 and quantity are not limited to shown in Fig. 2,
It can also be set to other structures form, therefore, as long as the structure type that the first lines 1111, the second lines 141 are set as can
Increase groove 111, the surface area in reflecting layer 14, then belong to equivalent protection scope of the present utility model.
In the present embodiment, the bottommost of groove 111 is provided with layer of silica gel 16, and quantum dot layer 12 is adhered to by layer of silica gel 16
In groove 111.The setting of layer of silica gel 16 can either ensure effective light transmission, can guarantee that quantum dot layer 12 is adhered firmly to groove again
On 111, the reliability of product is effectively improved.
In the present embodiment, the material of transparent encapsulated layer 13 is silica gel, and translucency is good, and sealing is splendid.However, it is desirable to say
Bright, in the utility model, the material of transparent encapsulated layer 13 is not limited to silica gel, and it can also have strong adhesion to be other
Property macromolecule transparent resin material one or more combinations, such change belongs to equivalent protection of the present utility model
Scope.
In the present embodiment, the material in reflecting layer 14 is the material for having high thermal conductivity and high reflectance concurrently, has both ensured that light was anti-
Effect is penetrated, the radiating effect of product is effectively improved again, is conducive to improving the reliability and service life of product.
In the present embodiment, flip-chip 11 includes epitaxial substrate 112, N-type epitaxy layer 113, luminescent layer 114 and P
Type epitaxial layer 115；Epitaxial substrate 112, N-type epitaxy layer 113, luminescent layer 114 and p-type epitaxial layer 115 from it is upper it is outer under stack gradually
Set, groove 111 is located at the upper surface of epitaxial substrate 112, using the support as quantum dot layer 12 and fixed platform so that quantum
Point layer 12 plays good light conversion effect, drastically increases the high-color rendering of LED product, and ensures that light-emitting area is small, makes
Obtain photochromic more pure.
In the present embodiment, epitaxial substrate 112 is sapphire sheet.Sapphire sheet has the following advantages that as substrate：(1) it is raw
Produce technology maturation, device quality preferable；(2) stability very well, can be used in higher temperature growth processes；(3) high mechanical strength,
It is easily handled and cleans.Certainly, the material for preparing of epitaxial substrate 112 is not limited to this.
Corresponding, present embodiment discloses a kind of preparation method of quantum spot white light LED device 1, the work of the preparation method
Skill flow is as shown in figure 3, it comprises the following steps：
S1：Flipped light emitting unit is made, array type groove 111 is made in the upper surface of flipped light emitting unit, in groove 111
Inner surface etch the first lines 1111 (respectively figure does not embody the first lines 1111 wherein on the wall of side), wherein, groove 111
Width and depth determined according to the structure size of quantum dot layer 12；
S2：Flipped light emitting unit, which is cut into, has a groove 111 on many flip-chips 11, each flip-chip 11,
Electrode layer 15 is made in the bottom of each flip-chip 11；
S3：Many flip-chips 11 are all provided with array bonding on temporary base between adjacent flip-chip 11
Have a gap, the upper table of flip-chip 11 up, between flip-chip 11, the non-recessed region of the upper surface of flip-chip 11, with
And reflecting layer 14 is filled between the electrode of electrode layer 15；
S4：(the second lines 141 wherein on inwall of the second lines 141 is etched in the upper surface in reflecting layer 14 and inwall
Each figure does not embody)；
S5：Quantum dot layer 12 is set in groove 111；
S6：Transparent encapsulated layer 13 is coated in the upper surface in the upper surface of quantum dot layer 12, reflecting layer 14 and is solidified；
S7：Cutting, removal temporary base, isolated many quantum spot white light LED devices 1.
Wherein, in step s 5, groove 111 the first sprayed silicon glue-line 16 of bottommost and solidify, then quantum dot layer 12
Adhered to by layer of silica gel 16 in groove 111, effective light transmission can either be ensured, quantum dot layer 12 and flip-chip 11 are can guarantee that again
It is firmly combined with.
Wherein, in step sl, array type groove 111 is using 3D etchings, 3D printing shaping or Sheet Metal Forming Technology etching
Into the first lines 1111 is formed using 3D etchings, 3D printing shaping or Sheet Metal Forming Technology etching；In step s 4, the second lines
141 are formed using 3D etchings, 3D printing shaping or Sheet Metal Forming Technology etching；In step s 6, transparent encapsulated layer 13 is used
The coating of Molding techniques is formed.These manufacture crafts are extremely ripe, and preparation efficiency is high.
Embodiment 2
Present embodiment discloses another quantum spot white light LED device 2, as shown in Figure 4,5, in structure, itself and implementation
The difference of quantum spot white light LED device 1 described in example 1 is：
In the present embodiment, more specifically, the side wall of groove 111 is stepped；Quantum dot layer 12, which is located at, is in bosom
Groove 1112 in, exposed region, the upper surface of flip-chip 11 and the reflection of transparent encapsulated layer 13 coated quantum dots layer 12
The upper surface of layer 14.
In the present embodiment, as shown in Figure 4,5, to be set to two-stage stepped for the side wall of groove 111, that is, is set to dual-cavity knot
Structure.But, in the utility model, it is stepped that the side wall of groove 111 is not limited in Fig. 4, the two-stage shown in 5, according to product
Topology layout, it can also be set to, and more stages is stepped, and the side wall of groove 111 is also not limited to be set to stepped, and it is also
The other shapes such as zigzag can be set to.Therefore, such change belongs to equivalent protection scope of the present utility model.
Design based on said structure, effectively increases the contact area of transparent encapsulated layer 13 and flip-chip 11, makes
The combination for obtaining transparent encapsulated layer 13 and flip-chip 11 is more firm, so that the encapsulating structure of product has higher sealing
Property, and the circulation path of steam and oxygen is greatly extended, be conducive to avoiding steam and oxygen to quanta point material
Corrode.
The preparation method of quantum spot white light LED device 2 is substantially the same manner as Example 1 disclosed in the present embodiment, simply its
Describe specifically in some processes step, it is as follows：
In step sl, array type groove 111 is clearly made as stepped；In step s 5, only in bosom
Quantum layer 12 is set in groove 1112；In step s 6, in quantum dot layer 12 exposed region, the upper surface of flip-chip 11
(being specially the cascaded surface and side wall of groove 111) and the upper surface in reflecting layer 14 are coated with transparent encapsulated layer 13.
The other structures of quantum spot white light LED device 2 described in the present embodiment, other preparation methods and embodiment 1 are complete
It is identical, it will not be repeated here.
A kind of other contents of quantum spot white light LED device described in the utility model and preparation method thereof are referring to existing skill
Art.
The above, is only preferred embodiment of the present utility model, not does any formal to the utility model
Limitation, therefore all contents without departing from technical solutions of the utility model are implemented according to technical spirit of the present utility model to more than
Any simple modification that example is made, equivalent variations and modification, in the range of still falling within technical solutions of the utility model.
Claims (7)
1. a kind of quantum spot white light LED device, it is characterised in that：
Include flip-chip, quantum dot layer, transparent encapsulated layer, reflecting layer and electrode layer；
The upper surface of the flip-chip is provided with groove, and the inner surface of the groove is provided with the first lines, and the quantum dot layer is set
In in the groove；
The electrode layer is located at the bottom of the flip-chip；
The side wall of flip-chip described in the reflecting layer covers, the non-recessed region of the upper surface of the flip-chip and described
The side wall of electrode layer, the reflecting layer is also filled up between the electrode of the electrode layer；The upper surface in the reflecting layer and inwall
Provided with the second lines；
The transparent encapsulated layer coats the exposed region of the quantum dot layer and the upper surface in the reflecting layer.
2. a kind of quantum spot white light LED device according to claim 1, it is characterised in that：The side wall of the groove is rank
Scalariform；The quantum dot layer is in the centremost groove in place, and the transparent encapsulated layer coats the quantum dot layer
The upper surface of exposed region, the upper surface of the flip-chip and the reflecting layer.
3. a kind of quantum spot white light LED device according to claim 1 or 2, it is characterised in that：The bottommost of the groove
Provided with layer of silica gel, the quantum dot layer is adhered in the groove by the layer of silica gel.
4. a kind of quantum spot white light LED device according to claim 1 or 2, it is characterised in that：The transparent encapsulated layer
Material is silica gel.
5. a kind of quantum spot white light LED device according to claim 1 or 2, it is characterised in that：The material in the reflecting layer
To have the material of high thermal conductivity and high reflectance concurrently.
6. a kind of quantum spot white light LED device according to claim 1 or 2, it is characterised in that：The flip-chip includes
There are epitaxial substrate, N-type epitaxy layer, luminescent layer and p-type epitaxial layer；It is the epitaxial substrate, the N-type epitaxy layer, described luminous
Layer and the p-type epitaxial layer from it is upper it is outer under be cascading, the groove be located at the epitaxial substrate upper surface.
7. a kind of quantum spot white light LED device according to claim 6, it is characterised in that：The epitaxial substrate is blue precious
Flag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201621300460.7U CN206322725U (en) | 2016-11-30 | 2016-11-30 | A kind of quantum spot white light LED device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201621300460.7U CN206322725U (en) | 2016-11-30 | 2016-11-30 | A kind of quantum spot white light LED device |
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| CN201621300460.7U Withdrawn - After Issue CN206322725U (en) | 2016-11-30 | 2016-11-30 | A kind of quantum spot white light LED device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505134A (en) * | 2016-11-30 | 2017-03-15 | 广东晶科电子股份有限公司 | A kind of quantum spot white light LED device and preparation method thereof |
| CN109742249A (en) * | 2018-12-26 | 2019-05-10 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot LED and preparation method thereof |
| CN113659058A (en) * | 2021-08-20 | 2021-11-16 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
-
2016
- 2016-11-30 CN CN201621300460.7U patent/CN206322725U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505134A (en) * | 2016-11-30 | 2017-03-15 | 广东晶科电子股份有限公司 | A kind of quantum spot white light LED device and preparation method thereof |
| CN109742249A (en) * | 2018-12-26 | 2019-05-10 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot LED and preparation method thereof |
| WO2020133722A1 (en) * | 2018-12-26 | 2020-07-02 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot led, fabrication method therefor, and electronic device |
| CN113659058A (en) * | 2021-08-20 | 2021-11-16 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
| CN113659058B (en) * | 2021-08-20 | 2023-10-20 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
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