CN210110826U

CN210110826U - White light Micro LED structure based on flip-chip structure

Info

Publication number: CN210110826U
Application number: CN201921181157.3U
Authority: CN
Inventors: 刘国旭; 申崇渝
Original assignee: Yimei Xinguang (beijing) Technology Co Ltd
Current assignee: Yimei Xinguang (beijing) Technology Co Ltd; Shineon Beijing Technology Co Ltd
Priority date: 2019-07-25
Filing date: 2019-07-25
Publication date: 2020-02-21
Anticipated expiration: 2029-07-25

Abstract

The utility model discloses a white light Micro LED structure based on a flip structure, which comprises a circuit substrate and Micro LED chips, wherein the Micro LED chips are distributed on the circuit substrate in an equidistant and staggered way, the Micro LED chips are connected with the positive and negative electrodes of the circuit substrate through a P electrode and an N electrode, the P electrode is connected with N type GaN through P type GaN, a quantum well is formed at the interface between the P type GaN and the N type GaN, quantum dot materials are filled in the Micro LED chips, and black glue is filled at the interval between the Micro LED chips, the utility model discloses a white light Micro LED realizing structure which can convert the LED chips and the white light into a whole, not only has the advantages of high efficiency, high brightness, high reliability and fast reaction time of the traditional LED, but also has the characteristics of energy conservation, simple mechanism, small volume, thinness and no need of light-emitting backlight source, the processing is easier to realize.

Description

White light Micro LED structure based on flip-chip structure

Technical Field

The utility model relates to a semiconductor display technology field specifically is a white light MicroLED structure based on flip-chip structure.

Background

Micro LED technology, i.e. LED scaling and matrixing technology. Refers to the size of high-density micro-sized LED integrated on a chip, such as the addressable and individually driven lighting of each pixel of an LED display screen, and the pixel grade is reduced from millimeter grade to micron grade.

The Micro LED not only inherits the advantages of high efficiency, high brightness, high reliability and quick response time of the traditional LED, but also has the characteristics of energy conservation, simple mechanism, small volume, thinness and no need of backlight source for light emission. However, the processing difficulty of the existing Micro LED structure is still to be further improved.

SUMMERY OF THE UTILITY MODEL

In order to overcome the not enough of prior art scheme, the utility model provides a white light MicroLED structure based on flip-chip structure has changed MicroLED's structure, and processing is realized more easily, can the effectual problem that the solution background art provided.

The utility model provides a technical scheme that its technical problem adopted is:

the utility model provides a white light Micro LED structure based on flip-chip structure, includes circuit substrate and Micro LED chip, the equidistant crisscross distribution of Micro LED chip is in on the circuit substrate, the Micro LED chip is connected with circuit substrate's positive negative pole through P electrode and N electrode, the P electrode is connected with N type GaN through P type GaN the interface department between P type GaN and N type GaN forms the quantum well, and in the Micro LED chip pour into the quantum dot material, at each the interval department between the Micro LED chip fills the black glue.

Preferably, a transparent protective layer covering the Micro LED chip is arranged above the N-type GaN;

preferably, through holes are formed at both sides of the N-electrode.

Preferably, the quantum dot material comprises a red quantum dot material, a green quantum dot material and a blue quantum dot material.

Compared with the prior art, the beneficial effects of the utility model are that:

the utility model discloses can turn into integrative white light Micro LED realization structure with LED chip and white light, change traditional Micro LED's structure, processing is realized more easily.

Drawings

Fig. 1 is a schematic structural view of a white light Micro LED according to embodiment 1 of the present invention;

fig. 2 is a schematic structural view of a white light Micro LED according to embodiment 2 of the present invention;

fig. 3 is a schematic structural view of a white light Micro LED according to embodiment 3 of the present invention;

fig. 4 is a schematic structural view of a white light Micro LED according to embodiment 4 of the present invention;

fig. 5 is a process flow diagram of an epitaxial structure according to embodiment 1 of the present invention;

fig. 6 is a process flow diagram of etching a structure according to embodiment 3 of the present invention.

In the figure:

1-a circuit substrate; 2-Micro LED chip; a 3-P electrode; 4-N electrode; 5-P type GaN; 6-N type GaN; 7-a quantum well; 8-black glue; 9-a transparent protective layer; 10-a through hole; 11-retaining wall;

R-QD, red quantum dot materials; G-QD, green quantum dot materials; B-QD, blue quantum dot materials.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

Example 1:

as shown in fig. 1 to 4, the present embodiment provides a white light Micro LED structure based on a flip chip structure, specifically a white light Micro LED integrating an LED chip and a white light conversion scheme, including a circuit substrate 1 and an N-type GaN6, wherein P electrodes 3 and N electrodes 4 are arranged between the circuit substrate 1 and the N-type GaN6 in an equally spaced and staggered manner, the P electrodes 3 are connected with the N-type GaN6 through P-type GaN5, quantum wells 7 are arranged between the P-type GaN5 and the N-type GaN6, a plurality of Micro LED chips 2 are uniformly arranged above or inside the N-type GaN6 at equal intervals, quantum dot materials are filled into the Micro LED chips 2, black glue 8 is filled at intervals between the Micro LED chips 2, and a transparent protection layer 9 covering the Micro LED chips 2 is arranged above the N-type GaN 6; through holes 10 are formed in two sides of the N electrode 4, and the quantum dot materials comprise red quantum dot materials R-QD, green quantum dot materials G-QD and blue quantum dot materials B-QD.

As shown in fig. 5, when the Micro LED chip is an epitaxial structure formed on an N-type GaN, the implementation method of the white light Micro LED structure includes:

etching the P-type GaN, wherein one part of the P-type GaN penetrates through the quantum well, and the other part of the P-type GaN is not etched;

adding a P electrode on the lower part of the incompletely etched P-type GaN;

adding an N electrode on the lower part of the N-type GaN exposed by complete etching;

uniformly adding retaining walls above the N-type GaN;

etching the retaining wall to form independent Micro LED chips at the retaining wall, and pouring the quantum dot material into the Micro LED chips;

filling black glue at intervals of the Micro LED chips formed on each retaining wall;

a transparent protective layer covering the retaining wall and the black glue is additionally arranged above the retaining wall;

and sealing the whole white light Micro LED epitaxial structure.

When the quantum well is a purple light quantum well, red quantum dot materials, green quantum dot materials and blue quantum dot materials are sequentially poured into the three Micro LED chips of each chip set.

In the present embodiment, the black glue functions to enhance contrast

The white light realization mode of the Micro LED is as follows:

the purple light quantum well excites red, green and blue quantum dot materials to form white light;

the blue quantum well excites the red and green quantum dot materials to form white light.

Example 2:

the difference from example 1 is that, in this embodiment:

as shown in fig. 2, when the quantum well is a blue quantum well, the red quantum dot material and the green quantum dot material are sequentially poured into the first two micro led chips of each chip set, and the third chip sheet is not processed.

Example 3:

the difference from example 1 is that, in the present embodiment:

as shown in fig. 3 and fig. 6, when the Micro LED chip is an etched structure formed inside the N-type GaN embedded upper surface, the implementation method of the white light Micro LED structure includes:

adding a P electrode on the lower part of the incompletely etched P-type GaN;

thickening the N-type GaN, etching the N-type GaN, and uniformly separating a plurality of independent MicroLED chips at equal intervals;

filling black glue at the interval between the adjacent Micro LED chips;

etching a groove on each Micro LED chip separated from the N-type GaN, and pouring quantum dot materials into the groove;

a transparent protective layer is additionally arranged on the N-type GaN;

and sealing the whole white light Micro LED etching structure.

Example 4:

the difference from example 3 is that, in the present embodiment:

as shown in fig. 4, when the quantum well is a blue quantum well, the red quantum dot material and the green quantum dot material are sequentially poured into the first two micro led chips of each chip set, and the third chip sheet is not processed.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims

1. The white light Micro LED structure based on the flip structure is characterized by comprising a circuit substrate and Micro LED chips, wherein the Micro LED chips are distributed on the circuit substrate in an equidistant staggered mode, the Micro LED chips are connected with the positive electrode and the negative electrode of the circuit substrate through a P electrode and an N electrode, the P electrode is connected with N type GaN through P type GaN, a quantum well is formed at the interface between the P type GaN and the N type GaN, quantum dot materials are filled into the Micro LED chips, and black glue is filled at the intervals between the Micro LED chips.

2. The white light Micro LED structure based on the flip-chip structure as claimed in claim 1, wherein a transparent protection layer covering the Micro LED chip is disposed on the N-type GaN.

3. The white light Micro LED structure based on the flip-chip structure as claimed in claim 1, wherein a through hole is formed on both sides of the N electrode.

4. The white light Micro LED structure based on the flip-chip structure is characterized in that the quantum dot materials comprise red quantum dot materials, green quantum dot materials and blue quantum dot materials.