WO2022095129A1

WO2022095129A1 - Micro light-emitting diode and display panel

Info

Publication number: WO2022095129A1
Application number: PCT/CN2020/130040
Authority: WO
Inventors: 樊勇
Original assignee: 深圳市华星光电半导体显示技术有限公司
Priority date: 2020-11-06
Filing date: 2020-11-19
Publication date: 2022-05-12
Also published as: CN112420901A; CN112420901B

Abstract

A micro light-emitting diode (100) and a display panel (200). The micro light-emitting diode (100) comprises a light-emitting chip body (10) and a light conversion structure (11); the light conversion structure (11) is provided at the light-emitting side of the light-emitting chip body (10), and is used for converting light emitted by the light-emitting chip body (10) into white light; the light conversion structure (11) comprises a buffer layer (111) and a light conversion unit (112); at least one groove (111A) is formed on the buffer layer (111); and the light conversion unit (112) is accommodated in the groove (111A).

Description

Micro LEDs and Display Panels

technical field

The present application relates to the field of display technology, and in particular, to a miniature light emitting diode and a display panel.

Background technique

Micro LED (Micro Light Emitting Diode) displays have the advantages of high reliability, high color gamut, high brightness, high transparency, and high pixel density. The LED display has low packaging requirements, and it is very easy to realize flexible and seamless splicing display. It is a display with great development potential in the future.

At present, in the full-color display technology of Micro LED displays, the solution of blue light + photoconversion layer is usually used to realize full-color display. Specifically, by transferring the blue light chips at the positions of the red pixels, green pixels and blue pixels of the driving substrate respectively, and then printing the red quantum dots and the green quantum dots on the color filter substrate respectively, and by the alignment and bonding of the upper and lower substrates. Color conversion to achieve full color display. Since this solution needs to prevent cross-color between red pixels, green pixels and blue pixels, it is usually necessary to separately set a black light-shielding structure between the quantum dots corresponding to adjacent pixels.

technical problem

Since the red and green quantum dots are formed on the color filter substrate by inkjet printing to realize color conversion, the thickness of the black light-shielding structure between adjacent quantum dots is relatively large, so that part of the light emitted by the blue chip is absorbed by the black light-shielding structure. And the loss, thereby greatly reducing the light energy utilization rate of the blue light chip, and increasing the energy consumption of the product.

technical solutions

The present application provides a miniature light emitting diode and a display panel to solve the technical problem that the utilization rate of light energy of a blue light chip is reduced.

The application provides a miniature light-emitting diode, which includes:

a light-emitting chip body, the light emitted by the light-emitting chip body is blue light; and

a light conversion structure, the light conversion structure is disposed on the light-emitting side of the light-emitting chip body, and is used for converting the light emitted by the light-emitting chip body into white light;

The light conversion structure includes a buffer layer and a light conversion unit, the buffer layer is provided with a plurality of grooves, and each of the grooves accommodates the light conversion unit.

In the miniature light emitting diode of the present application, in the direction from both sides of the buffer layer to the center of the buffer layer, the distance between the adjacent grooves increases.

In the miniature light-emitting diode of the present application, the material of the light conversion unit includes red quantum dots and green quantum dots.

In the miniature light-emitting diode of the present application, the light-emitting chip body includes:

a first electrode;

a second electrode, the second electrode and the first electrode are disposed adjacent to each other;

a current spreading layer, the current spreading layer is disposed on the second electrode;

a first semiconductor layer, the first semiconductor layer is disposed on the current diffusion layer;

a light-emitting layer disposed on the first semiconductor layer; and

a second semiconductor layer, the second semiconductor layer is disposed on the light emitting layer and covers the first electrode, and the light conversion structure is located on the second semiconductor layer.

In the miniature light-emitting diode of the present application, the miniature light-emitting diode further includes a blocking structure layer, and the blocking structure layer is disposed on the light conversion structure;

The blocking structure layer includes a first inorganic layer, an organic layer and a second inorganic layer sequentially disposed on the light conversion structure.

The application also provides a miniature light-emitting diode, which includes:

a light-emitting chip body; and

The light conversion structure includes a buffer layer and a light conversion unit, the buffer layer is provided with at least one groove, and the light conversion unit is accommodated in the groove.

In the miniature light emitting diode of the present application, the number of the grooves is multiple, and each of the grooves accommodates the light conversion unit.

In the micro light emitting diode of the present application, the distance between the adjacent grooves increases in the direction from both sides of the buffer layer to the center of the buffer layer.

In the miniature light-emitting diode of the present application, the light emitted by the light-emitting chip body is blue light;

The material of the light conversion unit includes red quantum dots and green quantum dots.

a first electrode;

a light-emitting layer disposed on the first semiconductor layer; and

The present application also provides a display panel, which includes:

a drive substrate; and

a plurality of miniature light-emitting diodes, which are arranged on the driving substrate and are electrically connected to the driving substrate;

The miniature light-emitting diodes include:

a light-emitting chip body; and

In the display panel of the present application, the number of the grooves is plural, and each of the grooves accommodates the light conversion unit.

In the display panel of the present application, in the direction from both sides of the buffer layer to the center of the buffer layer, the distance between the adjacent grooves increases.

In the display panel of the present application, the display panel further includes a shading unit, and the shading unit is disposed between the adjacent micro light-emitting diodes.

In the display panel of the present application, the light emitted by the light-emitting chip body is blue light;

In the display panel of the present application, the light-emitting chip body includes:

a first electrode;

a light-emitting layer disposed on the first semiconductor layer; and

In the display panel of the present application, the miniature light-emitting diode further includes a blocking structure layer, and the blocking structure layer is disposed on the light conversion structure;

beneficial effect

Compared with the miniature light-emitting diodes in the prior art, the miniature light-emitting diodes provided by the present application integrate the light conversion unit on the light-emitting chip body. It is accommodated in the groove, thereby shortening the distance between the light-emitting chip body and the light conversion unit, so that the light emitted by the light-emitting chip body can be effectively absorbed by the light conversion unit, thereby improving the light energy utilization rate of the light-emitting chip body. The loss of light energy is reduced, thereby reducing the energy consumption of the product.

Description of drawings

In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained from these drawings without creative effort.

1 is a schematic structural diagram of a miniature light-emitting diode provided by an embodiment of the present application;

FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the present application;

FIG. 3 is a schematic structural diagram of a miniature light emitting diode in a display panel provided by an embodiment of the present application.

Embodiments of the present invention

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the protection scope of the present application.

In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as a limitation on this application. In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features defined as "first", "second" may expressly or implicitly include one or more of said features. In the description of the present application, "plurality" means two or more, unless otherwise expressly and specifically defined.

In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific situations.

In this application, unless otherwise expressly specified and defined, a first feature "on" or "under" a second feature may include direct contact between the first and second features, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present application. To simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the application. Furthermore, this application may repeat reference numerals and/or reference letters in different instances for the purpose of simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. In addition, this application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.

Please refer to FIG. 1 , which is a schematic structural diagram of a miniature light emitting diode according to an embodiment of the present application.

The embodiment of the present application provides a miniature light emitting diode 100 , which includes a light emitting chip body 10 , a light conversion structure 11 , a blocking structure layer 12 and a protective layer 13 . The light conversion structure 11 is disposed on the light emitting side of the light emitting chip body 10 and is used for converting the light emitted by the light emitting chip body 10 into white light. The blocking structure layer 12 is disposed on the light conversion structure 11 . The protective layer 13 is disposed on the peripheral side of the light-emitting chip body 10 . The light conversion structure 11 includes a buffer layer 111 and a light conversion unit 112 . At least one groove 111A is formed on the buffer layer 111 . The light conversion unit 112 is accommodated in the groove 111A.

Therefore, the micro light-emitting diode 100 provided by the embodiment of the present application integrates the light conversion unit 112 on the light-emitting chip body 10 . Specifically, at least one groove 111A is provided on the buffer layer 111 and the light conversion unit 112 is accommodated It is placed in the groove 111A, thereby shortening the distance between the light-emitting chip body 10 and the light conversion unit 112, so that the light emitted by the light-emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light-emitting chip body 10. The utilization rate of light energy reduces the loss of light energy.

In the embodiment of the present application, the light emitted by the light-emitting chip body 10 is blue light. The material of the light conversion unit 112 includes red quantum dots and green quantum dots. The light conversion unit 112 is formed by mixing red quantum dots and green quantum dots in a certain ratio, and the specific ratio of red quantum dots and green quantum dots can be set according to the actual situation, which is not limited in this application.

In some embodiments, the material of the light conversion unit 112 may also be yellow quantum dots or other light conversion materials capable of converting blue light into white light.

In addition, in some embodiments, the light emitted by the light-emitting chip body 10 is violet light. At this time, the material of the light conversion unit 112 may be a mixture of red quantum dots, green quantum dots and blue quantum dots, or may also be other light conversion materials that convert violet light into white light, which will not be repeated here.

Further, in the embodiment of the present application, the light-emitting chip body 10 includes:

a first electrode 101;

a second electrode 102, the second electrode 102 and the first electrode 101 are disposed adjacent to each other;

a current spreading layer 103 disposed on the second electrode 102;

a first semiconductor layer 104, the first semiconductor layer 104 is disposed on the current diffusion layer 103;

a light-emitting layer 105 disposed on the first semiconductor layer 104; and

A second semiconductor layer 106 is disposed on the light emitting layer 105 and covers the first electrode 101 , and the light conversion structure 11 is located on the second semiconductor layer 106 .

It should be noted that the structure of the light-emitting chip body 10 in the present application is only for illustration and is used to facilitate the description of the embodiments of the present application, but should not be construed as a limitation of the present application.

The first electrode 101 is an N-type electrode. The second electrode 102 is a P-type electrode. The materials of the first electrode 101 and the second electrode 102 can be one or more of metals or alloys such as indium, tin, zinc, nickel, silver, aluminum, gold, platinum, palladium, magnesium, tungsten, etc. The materials of the electrode 101 and the second electrode 102 may be the same or different, which are not limited in this application.

The current spreading layer 103 is used to increase the light emitting area of the light emitting chip body 10 . The material of the current diffusion layer 103 can be graphene, indium tin oxide, zinc oxide, nickel, silver, aluminum, gold, platinum, palladium, magnesium, tungsten and other materials with good electrical conductivity and reflectivity, and the material of the current diffusion layer 103 It can also be selected according to the actual situation, which is not limited in this application.

The first semiconductor layer 104 is a P-type gallium nitride layer. Specifically, the first semiconductor layer 104 is a magnesium-doped gallium nitride layer.

The second semiconductor layer 106 is an N-type gallium nitride layer. Specifically, the second semiconductor layer 106 is a silicon-doped gallium nitride layer.

The light-emitting layer 105 is a gallium nitride quantum well layer. Specifically, the light emitting layer 105 may be an indium gallium nitride/gallium nitride layer that is sequentially and repeatedly arranged.

It should be noted that the materials of the first semiconductor layer 104 , the light emitting layer 105 and the second semiconductor layer 106 in this embodiment can be specifically selected according to the type of the light emitting chip body 10 , and this embodiment should not be construed as a limitation of this application.

In addition, in the embodiment of the present application, the protective layer 13 plays a role of blocking water and oxygen, which is used to reduce the decay rate of the performance of each film layer in the micro light emitting diode 100 , thereby increasing the service life of the micro light emitting diode 100 . The material of the protective layer 13 may be a material with good thermal conductivity such as silicon oxide, silicon nitride, silicon oxynitride or aluminum nitride, and the present application does not specifically limit the material of the protective layer 13 .

In the embodiment of the present application, the material of the buffer layer 111 is gallium nitride. The thickness of the buffer layer 111 is between 1 micrometer and 6 micrometers, and the specific thickness of the buffer layer 111 can be set according to the actual situation, which is not repeated here.

In the embodiment of the present application, the number of grooves 111A is multiple. The light conversion unit 112 is accommodated in each groove 111A.

It should be noted that the sizes of the multiple grooves 111A in the present application may be the same or different, and the embodiment of the present application only takes the same size of the multiple grooves 111A as an example for description, but is not limited thereto. In addition, the cross-sectional shape of the groove 111A in the present application may be a square or a trapezoid, and the present embodiment only takes the trapezoidal cross-sectional shape of the groove 111A as an example for description, which should not be construed as a limitation of the present application.

Further, the specific number of the grooves 111A can be set according to the actual situation, which is not limited in this application. The depth of the groove 111A can be set according to the thickness of the buffer layer, which is not repeated here.

It can be understood that when the blue light emitted by the light-emitting chip body 10 is directed to the light conversion unit 112, the red quantum dots and the green quantum dots in the light conversion unit 112 are excited by the blue light to emit red light and green light, respectively. The green light and the blue light are mixed to form white light, thereby obtaining the micro light emitting diode 100 capable of emitting white light.

In this embodiment, when the thickness of the buffer layer 111 is constant, a plurality of grooves 111A are provided on the buffer layer 111, thereby providing a light mixing space for the adjacent light conversion units 112, so that the The light conversion units 112 can be uniformly distributed, which is beneficial to improve the uniformity of the light emitted by the micro light emitting diodes. Further, the greater the number of grooves 111A, the smaller the distance between adjacent grooves 111A, and the better the light mixing effect between adjacent light conversion units 112, so that the uniformity of the light emitted by the micro LEDs is better. it is good.

Further, due to the poor heat dissipation performance of the area where the red and green quantum dots in the light conversion unit 112 are located, the arrangement of the plurality of grooves 111A in this embodiment can not only disperse the quantum dots in a single micro light emitting diode 100, but also Due to the existence of the groove walls in the grooves 111A, the arrangement of the plurality of grooves 111A increases the contact area between the quantum dots and the groove walls, thereby effectively reducing the risk of poor heat dissipation due to excessive concentration of the quantum dots, improving the The heat dissipation effect of the miniature light-emitting diode is improved, thereby helping to improve the service life of the miniature light-emitting diode.

Further, in some embodiments, in the direction from both sides of the buffer layer 111 to the center of the buffer layer 111 , the distance between adjacent grooves 111A increases.

It can be understood that, since the brightness of the light located on both sides of the buffer layer 111 is lower than the brightness of the light located in the center of the buffer layer 111 , the problem of unevenness of the light emitted by the micro light emitting diode occurs. In the case where the sizes of the plurality of grooves 111A are all the same, the above arrangement makes the distance between the adjacent grooves 111A in the center of the buffer layer 111 larger than the distance between the adjacent grooves 111A on both sides, so that the buffer layer 111 The occupied area of the light conversion unit 112 in the center is reduced compared to the two sides, that is, at this time, the brightness of the light emitted from the edge of the buffer layer 111 is increased relative to the brightness of the light emitted from the center of the buffer layer 111, thereby reducing the buffer layer 111. Compared with the phenomenon that the brightness of the edge area of 111 is darker than that of the central area, the uniformity of the light emitted by the micro light-emitting diode is improved, which is beneficial to improve the light-emitting performance of the micro light-emitting diode.

In some embodiments, the light converting structure 11 includes a first region and a second region. The first area and the second area are alternately arranged. The groove 111A includes a first groove and a second groove. The first groove is provided in the first area. The second groove is provided in the second area. A second groove is provided between adjacent first grooves. The materials of the light conversion unit 112 in the first groove are red quantum dots and green quantum dots. The material of the light conversion unit 112 in the second groove is yellow quantum dots.

It can be understood that, since the luminous efficiency of yellow quantum dots is lower than that of red and green quantum dots, the above setting is made by making yellow quantum dots and red and green quantum dots intersect, and the adjacent red and green quantum dots are set as yellow quantum dots, and further. The brightness of the light in the middle region of the buffer layer 111 can be reduced, thereby improving the uniformity of the light emitted by the micro light emitting diode.

In the embodiment of the present application, the barrier structure layer 12 includes a first inorganic layer 121 , an organic layer 122 and a second inorganic layer 123 sequentially disposed on the light conversion structure 11 .

Since the organic material has the function of releasing stress, in this embodiment, by disposing an organic layer 122 in the barrier structure layer 12 , the cracking of the film layer of the micro light emitting diode due to the influence of heat or mechanical stress can be avoided, thereby facilitating the improvement of the micro light emitting diode. The performance of the light-emitting diode further increases the service life of the miniature light-emitting diode.

Wherein, the materials of the first inorganic layer 121 and the second inorganic layer 123 can be inorganic materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., which have a good function of blocking water and oxygen. The material of the organic layer 122 may be an organic material such as polyimide. In addition, the material of the first inorganic layer 121 and the material of the second inorganic layer 123 may be the same or different, which is not limited in this application.

Further, the preparation method of the miniature light-emitting diode 100 provided in the embodiment of the present application specifically includes the following steps:

S101: Provide a base substrate.

Optionally, the above-mentioned base substrate may be a sapphire substrate, a silicon substrate or a silicon carbide substrate. In the embodiments of the present application, the base substrate is a sapphire substrate.

S102: forming a patterned mask layer on the base substrate;

Specifically, step S102 includes the following steps:

S1021: Form a mask layer on the base substrate.

The material of the mask layer may be silicon oxide or silicon nitride. In the embodiments of the present application, the material of the mask layer is silicon oxide.

S1022: forming a patterned mask layer;

Specifically, an etching process is used to etch the mask layer to form a patterned mask layer. Specifically, in the embodiment of the present application, the patterned mask layer is a strip-shaped mask layer, that is, a plurality of strip-shaped grooves are formed on the mask layer, and the strip-shaped grooves expose the base substrate.

Due to the polarity of the electric field, when the current density increases, the light-emitting wavelength of the light-emitting chip body will undergo a blue-shift phenomenon. The above arrangement is conducive to the formation of semi-polarity by making the gallium nitride crystal grow laterally along the extending direction of the strip groove. The gallium nitride crystal can improve the blue-shift phenomenon of the light-emitting wavelength, and can maintain the consistency of the light-emitting wavelength under the variable current drive of the micro light-emitting diode, which is beneficial to improve the light-emitting performance of the micro light-emitting diode.

In some embodiments, the patterned mask layer may also have other shapes, which may be selected according to actual application requirements, which are not limited in this application.

S1023: Form a buffer layer 111 on the patterned mask layer.

First, a metal organic compound chemical vapor deposition technology is used to grow gallium nitride crystals in the strip grooves, so that the gallium nitride crystals grow along the extending direction of the strip grooves.

Next, when the gallium nitride crystal is grown to the same thickness as the mask layer, the gallium nitride crystal is continued to grow so that the thickness of the gallium nitride crystal exceeds the thickness of the mask layer, thereby forming the buffer layer 111 .

Specifically, the thickness of the buffer layer 111 is between 1 micrometer and 6 micrometers, and the specific thickness of the buffer layer 111 can be set according to the actual situation, which is not limited in this application.

S103 : forming the light-emitting chip body 10 on the buffer layer 111 .

First, the second semiconductor layer 106 , the light emitting layer 105 and the first semiconductor layer 104 are sequentially formed on the buffer layer 111 using a metal organic compound chemical vapor deposition technique. Wherein, the side of the second semiconductor layer 106 facing the light emitting layer 105 has an exposed portion.

Next, a current diffusion layer 103 is formed on the first semiconductor layer 104 by using techniques such as magnetron sputtering or thermal evaporation.

Then, the first electrode 101 is formed on the exposed portion of the second semiconductor layer 106 , and the second electrode 102 is formed on the current diffusion layer 103 . The second semiconductor layer 106 , the light emitting layer 105 , the first semiconductor layer 104 , the current spreading layer 103 , the first electrode 101 and the second electrode 102 constitute the light emitting chip body 10 .

S104 : forming a protective layer 13 on the outside of the light-emitting chip body 10 and the buffer layer 111 to obtain the miniature light-emitting diode 100 to be formed.

S105 : forming the light conversion structure 11 on the light emitting chip body 10 .

Specifically, step S105 includes the following steps:

Step S1051: peel off the base substrate;

Step S1052: Provide a temporary substrate, and place the micro-LED 100 to be formed on the temporary substrate.

Wherein, the material of the above temporary substrate can be selected according to the actual situation, which is not limited in this application.

Step S1053: obtaining a plurality of grooves 111A on the buffer layer 111;

Specifically, the strip-shaped mask layer is etched by an etching process to remove the strip-shaped mask layer, so that a strip-shaped groove 111A is formed at the position of the strip-shaped mask layer. Further, a plurality of grooves 111A are obtained on the buffer layer 111 .

Step S1054 : forming the light conversion structure 11 .

Specifically, a mixture of red quantum dots and green quantum dots is formed in the groove 111A to form the light conversion unit 112 . The buffer layer 111 and the light conversion unit 112 after the stripe-shaped mask layer is removed form the light conversion structure 11 .

Wherein, the formation method of the light conversion unit 112 may be an atomization spray method, a blade coating method, or the like, and the present application does not specifically limit the formation method of the light conversion unit 112 .

S106 : forming the blocking structure layer 12 on the light conversion structure 11 .

Specifically, the second inorganic layer 123 , the organic layer 122 and the first inorganic layer 121 are sequentially formed on the light conversion structure 11 . The formation methods of the second inorganic layer 123 , the organic layer 122 and the first inorganic layer 121 may refer to the formation methods of the inorganic film layer and the organic film layer in the prior art, which will not be repeated here.

Thus, the manufacturing method of the micro light emitting diode 100 in the embodiment of the present application is completed.

The miniature light-emitting diode 100 provided by the embodiment of the present application integrates the light conversion unit 112 on the light-emitting chip body 10 . Specifically, a plurality of grooves 111A are provided on the buffer layer 111 , and the light conversion unit 112 is accommodated in the recess. In the groove 111A, the distance between the light-emitting chip body 10 and the light conversion unit 112 is shortened, so that the light emitted by the light-emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization of the light-emitting chip body 10. rate, reducing the loss of light energy. In addition, the arrangement of the plurality of grooves 111A in this embodiment is beneficial to improve the uniformity of the light emitted by the micro light emitting diode, thereby helping to improve the light emitting performance of the micro light emitting diode.

Please refer to FIG. 2 and FIG. 3 , wherein FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the application; FIG. 3 is a structural schematic diagram of a micro light-emitting diode in a display panel provided by an embodiment of the application.

An embodiment of the present application provides a display panel 200 , which includes a driving substrate 20 , a plurality of miniature light-emitting diodes 100 and a color filter substrate 21 . A plurality of micro light-emitting diodes 100 are disposed on the driving substrate 20 and are electrically connected to the driving substrate 20 . The color filter substrate 21 is disposed on the side of the micro light emitting diode 100 away from the driving substrate 20 . The miniature light-emitting diode 100 includes a light-emitting chip body 10 and a light conversion structure 11 . The light conversion structure 11 is disposed on the light emitting side of the light emitting chip body 10 and is used for converting the light emitted by the light emitting chip body 10 into white light. The light conversion structure 11 includes a buffer layer 111 and a light conversion unit 112 . At least one groove 111A is formed on the buffer layer 111 . The light conversion unit 112 is accommodated in the groove 111A.

Therefore, in the display panel 200 provided by the embodiment of the present application, the light conversion unit 112 is integrated on the light-emitting chip body 10 , specifically, at least one groove 111A is provided on the buffer layer 111 to accommodate the light conversion unit 112 in the groove 111A, thereby shortening the distance between the light-emitting chip body 10 and the light conversion unit 112 , so that the light emitted by the light-emitting chip body 10 can be effectively absorbed by the light conversion unit 112 , thereby improving the light emission of the light-emitting chip body 10 The energy utilization rate is reduced, and the energy consumption of the display panel is reduced.

In the prior art, when red quantum dots and green quantum dots are respectively formed on a color filter substrate by inkjet printing to realize color conversion, in order to avoid cross-color between pixels, the quantum dots corresponding to adjacent pixels are usually A black shading structure is set in between. However, in the above setup, the cost of forming quantum dots using inkjet printing technology is high and the process is complicated.

In this embodiment, by integrating the light conversion unit 112 on the light emitting chip body 10 , the inkjet printing process can be omitted, which is beneficial to save the process cost and reduce the dependence on equipment. In addition, by integrating the light conversion unit 112, the black light-shielding structure between the quantum dots corresponding to adjacent pixels on the original color filter substrate 21 is omitted, thereby further reducing the process cost.

It should be noted that, for the specific structure of the micro light emitting diode 100 and the materials of each film layer in the embodiment of the present application, reference may be made to the description of the micro light emitting diode 100 in the foregoing embodiments, which will not be repeated here.

In the embodiment of the present application, the display panel 200 further includes a light shielding unit 22 . The light-shielding unit 22 is disposed between adjacent miniature light-emitting diodes 100 . Specifically, the side of the light shielding unit 22 away from the driving substrate 20 is flush with the side of the light conversion structure 11 away from the substrate. Therefore, in this embodiment, a light shielding unit 22 is shared between the light conversion structures 11 corresponding to the adjacent miniature light emitting diodes 100 and the light emitting chip body 10 , thereby saving the process cost.

In some embodiments, the side of the light shielding unit 22 away from the driving substrate 20 is flush with the side of the blocking structure layer 12 away from the substrate. This arrangement can prevent the occurrence of cross-color between adjacent micro light-emitting diodes 100 to the greatest extent, can avoid the loss of light energy of the light-emitting chip body 10, and further improve the light energy utilization rate of the light-emitting chip body 10, thereby improving the light conversion unit 112. luminous efficiency.

In the embodiment of the present application, the color filter substrate 21 includes a base 21A and a color filter layer 21B disposed on the base 21A. The color filter layer 21B is located on the side of the base 21A close to the driving substrate 20 . The color filter layer 21B includes a red color filter block 211 , a green color filter block 212 and a blue color filter block 213 which are arranged adjacently. In addition, the color filter substrate 21 further includes a black matrix 214 disposed between the red filter block 211 , the green filter block 212 and the blue filter block 213 .

It should be noted that the structures of the color filter substrate 21 and the driving substrate 20 in the embodiments of the present application are only for illustration and are used to facilitate the description of the embodiments of the present application, but should not be construed as limitations of the present application.

In addition, the specific structure of the driving substrate 20 in the embodiment of the present application may refer to the prior art, which will not be repeated here.

The display panel 200 provided by the embodiment of the present application integrates the light conversion unit 112 on the light-emitting chip body 10 , specifically, at least one groove 111A is provided on the buffer layer 111 , and the light conversion unit 112 is accommodated in the groove 111A, thereby shortening the distance between the light-emitting chip body 10 and the light conversion unit 112, so that the light emitted by the light-emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization rate of the light-emitting chip body 10. , reducing the power consumption of the display panel. In addition, the present embodiment omits the ink jet printing technology, thereby simplifying the process and saving the process cost.

The embodiments of the present application have been introduced in detail above, and the principles and implementations of the present application are described in this paper by using specific examples. The descriptions of the above embodiments are only used to help understand the methods and core ideas of the present application; at the same time, for Persons of ordinary skill in the art, based on the idea of the present application, will have changes in the specific implementation manner and application scope. In summary, the contents of this specification should not be construed as limitations on the present application.

Claims

A miniature light-emitting diode, comprising:

a light-emitting chip body, the light emitted by the light-emitting chip body is blue light; and

a light conversion structure, the light conversion structure is disposed on the light-emitting side of the light-emitting chip body, and is used for converting the light emitted by the light-emitting chip body into white light;

The light conversion structure includes a buffer layer and a light conversion unit, the buffer layer is provided with a plurality of grooves, and each of the grooves accommodates the light conversion unit.
The miniature light emitting diode according to claim 1, wherein a distance between adjacent grooves increases in a direction from both sides of the buffer layer to the center of the buffer layer.
The miniature light emitting diode according to claim 1, wherein the material of the light conversion unit comprises red quantum dots and green quantum dots.
The miniature light-emitting diode according to claim 1, wherein the light-emitting chip body comprises:

a first electrode;

a second electrode, the second electrode and the first electrode are disposed adjacent to each other;

a current spreading layer, the current spreading layer is disposed on the second electrode;

a first semiconductor layer, the first semiconductor layer is disposed on the current diffusion layer;

a light-emitting layer disposed on the first semiconductor layer; and

a second semiconductor layer, the second semiconductor layer is disposed on the light emitting layer and covers the first electrode, and the light conversion structure is located on the second semiconductor layer.
The micro light emitting diode according to claim 1, wherein the micro light emitting diode further comprises a blocking structure layer, the blocking structure layer is disposed on the light conversion structure;

The blocking structure layer includes a first inorganic layer, an organic layer and a second inorganic layer sequentially disposed on the light conversion structure.
A miniature light-emitting diode, comprising:

a light-emitting chip body; and

a light conversion structure, the light conversion structure is disposed on the light-emitting side of the light-emitting chip body, and is used for converting the light emitted by the light-emitting chip body into white light;

The light conversion structure includes a buffer layer and a light conversion unit, the buffer layer is provided with at least one groove, and the light conversion unit is accommodated in the groove.
The miniature light-emitting diode according to claim 6, wherein the number of the grooves is plural, and each of the grooves accommodates the light conversion unit.
The miniature light emitting diode according to claim 7, wherein, in a direction from both sides of the buffer layer to the center of the buffer layer, the distance between adjacent grooves increases.
The miniature light-emitting diode according to claim 6, wherein the light emitted by the light-emitting chip body is blue light;

The material of the light conversion unit includes red quantum dots and green quantum dots.
The miniature light-emitting diode according to claim 6, wherein the light-emitting chip body comprises:

a first electrode;

a second electrode, the second electrode and the first electrode are disposed adjacent to each other;

a current spreading layer, the current spreading layer is disposed on the second electrode;

a first semiconductor layer, the first semiconductor layer is disposed on the current diffusion layer;

a light-emitting layer disposed on the first semiconductor layer; and

a second semiconductor layer, the second semiconductor layer is disposed on the light emitting layer and covers the first electrode, and the light conversion structure is located on the second semiconductor layer.
The micro light emitting diode according to claim 6, wherein the micro light emitting diode further comprises a blocking structure layer, the blocking structure layer is disposed on the light conversion structure;

The blocking structure layer includes a first inorganic layer, an organic layer and a second inorganic layer sequentially disposed on the light conversion structure.
A display panel comprising:

a drive substrate; and

a plurality of miniature light-emitting diodes, which are arranged on the driving substrate and are electrically connected to the driving substrate;

The miniature light-emitting diodes include:

a light-emitting chip body; and

a light conversion structure, the light conversion structure is disposed on the light-emitting side of the light-emitting chip body, and is used for converting the light emitted by the light-emitting chip body into white light;

The light conversion structure includes a buffer layer and a light conversion unit, the buffer layer is provided with at least one groove, and the light conversion unit is accommodated in the groove.
The display panel of claim 12, wherein the number of the grooves is plural, and each of the grooves accommodates the light conversion unit.
The display panel of claim 13 , wherein, in a direction from both sides of the buffer layer to a center of the buffer layer, a distance between adjacent grooves increases.
The display panel according to claim 12, wherein the display panel further comprises a light-shielding unit, and the light-shielding unit is disposed between the adjacent miniature light-emitting diodes.
The display panel according to claim 12, wherein the light emitted by the light-emitting chip body is blue light;

The material of the light conversion unit includes red quantum dots and green quantum dots.
The display panel of claim 12, wherein the light-emitting chip body comprises:

a first electrode;

a second electrode, the second electrode and the first electrode are disposed adjacent to each other;

a current spreading layer, the current spreading layer is disposed on the second electrode;

a first semiconductor layer, the first semiconductor layer is disposed on the current diffusion layer;

a light-emitting layer disposed on the first semiconductor layer; and

a second semiconductor layer, the second semiconductor layer is disposed on the light emitting layer and covers the first electrode, and the light conversion structure is located on the second semiconductor layer.
The display panel according to claim 12, wherein the micro light emitting diode further comprises a blocking structure layer, the blocking structure layer is disposed on the light conversion structure;

The blocking structure layer includes a first inorganic layer, an organic layer and a second inorganic layer sequentially disposed on the light conversion structure.