CN112310142B - Display device, display panel and manufacturing method thereof - Google Patents
Display device, display panel and manufacturing method thereof Download PDFInfo
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- CN112310142B CN112310142B CN202011183607.XA CN202011183607A CN112310142B CN 112310142 B CN112310142 B CN 112310142B CN 202011183607 A CN202011183607 A CN 202011183607A CN 112310142 B CN112310142 B CN 112310142B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention provides a display device, a display panel and a manufacturing method thereof, wherein the display device comprises a first substrate and a second substrate which are oppositely arranged; the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and the first area is provided with a pixel driving circuit, a first electrode and a second electrode; the second substrate has a plurality of light emitting devices including a light emitting structure layer including a third region having a third electrode and a fourth region; the second region is provided with a through hole, the through hole penetrates through at least one layer of the film between the light-emitting device and the first substrate, and in the direction perpendicular to the second substrate, the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth region, so that the blocking of the film on the top of the light-emitting structure layer of the fourth region to emergent rays of the film is reduced, and the light-emitting efficiency of the light-emitting structure layer of the fourth region and the light-emitting efficiency of the light-emitting device are improved.
Description
Technical Field
The invention relates to the technical field of displays, in particular to a display device, a display panel and a manufacturing method of the display panel.
Background
With the development of scientific technology, Micro-LEDs (Micro-LEDs) gradually expose corners in the field of display technology, and become a new generation of display technology. The manufacturing method of the Micro-LED mainly comprises the steps of providing an array substrate, transferring a plurality of Micro-LEDs manufactured on other substrates to the array substrate, and controlling the light emission of each Micro-LED through a driving circuit on the array substrate to realize picture display. However, in the conventional Micro-LED display panel, the light extraction efficiency of the Micro-LED needs to be further improved.
Disclosure of Invention
In view of this, the invention provides a display device, a display panel and a manufacturing method thereof, so as to improve the light extraction efficiency of Micro-LEDs in the display panel.
In order to achieve the purpose, the invention provides the following technical scheme:
a display panel comprises a first substrate and a second substrate which are oppositely arranged;
the side, facing the second substrate, of the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and each first area is provided with a pixel driving circuit, a first electrode and a second electrode;
the side of the second substrate facing the first substrate is provided with a plurality of light-emitting devices, each light-emitting device comprises a light-emitting structure layer, each light-emitting structure layer comprises a third area and a fourth area, and each third area is provided with a third electrode and a fourth electrode;
the light-emitting device is arranged corresponding to the structural unit, the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode, so that the pixel driving circuit drives the light-emitting structural layer to emit light;
and the second region is provided with a through hole which penetrates through at least one layer of the film layers between the light-emitting device and the first substrate, and the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth region in the direction perpendicular to the second substrate.
A manufacturing method of a display panel is applied to the display panel, and the manufacturing method comprises the following steps:
providing a first substrate, wherein one side of the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and the first area is provided with a pixel driving circuit, a first electrode and a second electrode;
providing a second substrate, wherein one side of the second substrate is provided with a plurality of light emitting devices, each light emitting device comprises a light emitting structure layer, each light emitting structure layer comprises a third area and a fourth area, and each third area is provided with a third electrode and a fourth electrode;
the first substrate and the second substrate are fixedly attached, the light-emitting device is arranged corresponding to the structural unit, the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode, so that the pixel driving circuit drives the light-emitting structural layer to emit light;
the second area is provided with a through hole, the through hole penetrates through at least one layer of the film layers between the light-emitting device and the first substrate, and the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth area in the direction perpendicular to the second substrate.
A display device comprising a display panel as claimed in any one of the above.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the display device, the display panel and the manufacturing method of the display panel provided by the invention, the second area is provided with the through hole, the through hole penetrates through at least one layer of the film layers between the light-emitting device and the first substrate, and the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth area in the direction perpendicular to the second substrate, so that the blocking of the film layer at the top of the light-emitting structure layer of the fourth area on the emergent light of the light-emitting structure layer can be reduced by reducing the film layers between the light-emitting device and the first substrate, and the light-emitting efficiency of the light-emitting structure layer of the fourth area and the light-emitting device can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic top view of a display panel according to an embodiment of the present invention;
FIG. 2 is a partial enlarged view of the display panel shown in FIG. 1;
FIG. 3 is a schematic cross-sectional view of the display panel shown in FIG. 1 along a cutting line AA';
fig. 4 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 5 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 6 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 7 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of a light-emitting device according to an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of a light-emitting device according to another embodiment of the present invention;
fig. 10 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 11 is a schematic cross-sectional view illustrating a display panel according to another embodiment of the present invention;
fig. 12 is a schematic top view illustrating a display panel according to another embodiment of the present invention;
FIG. 13 is a cross-sectional view of the display panel shown in FIG. 12;
fig. 14 is a schematic view of a display device according to an embodiment of the present invention;
fig. 15 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, so that the above-described objects, features and advantages of the present invention are more clearly understood and appreciated. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a display panel, as shown in fig. 1, fig. 1 is a schematic top view structure diagram of the display panel according to an embodiment of the present invention, and the display panel includes a first substrate 10 and a second substrate 20, which are oppositely disposed.
The first substrate 10 has a plurality of structural units 101 on a side facing the second substrate 20, and the second substrate 20 has a plurality of light emitting devices 201 on a side facing the first substrate 10. Of course, the display panel in the embodiment of the invention further includes a plurality of gate lines G, a plurality of data lines D, a gate driving circuit 30, a driving chip 40, and the like, which are not described herein again.
In the embodiment of the present invention, as shown in fig. 1, a plurality of structural units 101 are arranged in an array. Also, the light emitting devices 201 are disposed corresponding to the structural units 101, for example, each light emitting device 201 is disposed corresponding to one structural unit 101.
And, as shown in fig. 2 and fig. 3, fig. 2 is a partial enlarged view of the display panel shown in fig. 1, fig. 3 is a schematic cross-sectional structure of the display panel shown in fig. 1 along a cutting line AA', each structural unit 101 includes a first area a1 and a second area a2, each light emitting device 201 includes a light emitting structural layer 2010, each light emitting structural layer 2010 includes a third area A3 and a fourth area a4, the first area a1 has a pixel driving circuit 1010, a first electrode 1011 and a second electrode 1012, and the third area A3 has a third electrode 2011 and a fourth electrode 2012.
For example, the third electrode 2011 of each light emitting device 201 is electrically connected to the first electrode 1011, the fourth electrode 2012 is electrically connected to the second electrode 1012, the third electrode 2011 of each light emitting device 201 is electrically connected to the first electrode 1011 in the corresponding structural unit 101, the fourth electrode 2012 of each light emitting device 201 is electrically connected to the second electrode 1012 in the corresponding structural unit 101, and the first electrode 1011 and the second electrode 1012 are electrically connected to the pixel driving circuit 1010, so that the pixel driving circuit 1010 can drive the light emitting structural layer 2010 or the light emitting device 201 to emit light, thereby displaying an image.
In some embodiments of the present invention, the first region a1 surrounds the second region a2, the first electrode 1011 and the second electrode 1012 are respectively located at two sides of the second region a2, the fourth region a4 is located at a middle region of the light emitting structure layer 2010, the third region A3 is located at two sides of the fourth region a4, the third electrode 2011 is located in the third region A3 at one side of the fourth region a4, and the fourth electrode 2012 is located in the third region A3 at the other side of the fourth region a4, so that the position of the first electrode 1011 and the position of the third electrode 2011 are electrically connected, and the position of the second electrode 1012 and the position of the fourth electrode 2012 are electrically connected.
In some embodiments of the present invention, the second region a2, the third region A3, and the fourth region a4 are square regions, and the first region a1 is a ring region, but the present invention is not limited thereto, and in other embodiments, the shape of the first region a1 may be determined according to the positions of the pixel driving circuit 1010, the first electrode 1011, and the second electrode 1012, the shape of the third region A3 may be determined according to the positions of the third electrode 2011 and the fourth electrode 2012, and the shapes of the second region a2 and the fourth region a4 may be determined.
In some embodiments of the present invention, as shown in fig. 4, fig. 4 is a schematic cross-sectional structure view of a display panel according to another embodiment of the present invention, in which a third electrode 2011 is electrically connected to a first electrode 1011 through a conductive paste 11, and a fourth electrode 2012 is electrically connected to a second electrode 1012 through the conductive paste 11. Optionally, the Conductive paste 11 is Anisotropic Conductive paste (ACF). The ACF mainly comprises a resin adhesive and conductive particles, so that the electrodes are bonded and fixed through the resin adhesive, and the electrodes are electrically connected through the conductive particles.
In some embodiments of the present invention, the first substrate 10 comprises a glass substrate; the second substrate 20 includes a metal substrate, wherein the metal substrate may be a substrate made of a metal material such as molybdenum, tungsten, or the like; the light emitting device 201 includes an LED or a Micro-LED, etc.
In some embodiments, the display panel shown in fig. 3 may be formed by fabricating the pixel driving circuit 1010, the first electrode 1011, the second electrode 1012, and the like on the first substrate 10, that is, a glass substrate, then fabricating the light emitting device 201 on the second substrate 20, and then attaching the third electrode 2011 to the first electrode 1011 and attaching the fourth electrode 2012 to the second electrode 1012 through a conductive adhesive to attach the first substrate 10 to the second substrate 20.
Compared with the mode of manufacturing the Micro-LEDs on the substrate such as the silicon substrate and then transferring the Micro-LEDs to the first substrate 10, the mode of directly manufacturing the Micro-LEDs on the metal substrate, namely the mode of directly adopting the metal substrate as the growth substrate, can keep the metal substrate and the Micro-LEDs thereon in the display panel as a part of the display panel structure, so that huge transfer of the Micro-LEDs is not needed, the problem of reduction of the yield of the Micro-LEDs caused by the huge transfer is avoided, and the yield of the Micro-LEDs, namely the light-emitting devices 201 in the embodiment of the invention is higher.
In addition, the metal substrate is used as the growth substrate, so that the limitation on the size of the growth substrate is avoided, namely, in the embodiment of the invention, the Micro-LED can be manufactured on the metal substrate with any required size to form the display panel with the required size. The sizes of the silicon substrate, the sapphire substrate and the like are limited, that is, the sizes of the silicon substrate, the sapphire substrate and the like are small, so that the silicon substrate, the sapphire substrate and the like cannot be applied to the manufacturing of a large-size display panel, and the application range is narrow.
In some embodiments of the present invention, as shown in fig. 3, a first planarization layer 202 and a first buffer layer 203 are further disposed between the metal substrate and the light emitting device 201, wherein the first buffer layer 203 may be formed by an Ion Beam Assisted Deposition (IBAD) method.
In the embodiment of the present invention, as shown in fig. 2 and 3, the second area a2 has a through hole 1013, the through hole 1013 penetrates at least one of the film layers between the light emitting device 201 and the first substrate 10, and a projection of the through hole 1013 at least covers a projection of the light emitting structure layer 2010 of the fourth area a4 in a direction perpendicular to the second substrate 20, i.e., in the Y direction, so that the light emitted from the light emitting structure layer 2010 of the fourth area a4 can exit through the through hole 1013.
Since the through hole 1013 penetrates at least one of the film layers between the light emitting device 201 and the first substrate 10, and the projection of the through hole 1013 at least covers the projection of the light emitting structure layer 2010 of the fourth area a4 in the direction perpendicular to the second substrate 20, i.e. the Y direction, it is possible to reduce the blocking of the light emitting structure layer 2010 of the fourth area a4 by the film layer on the top of the light emitting structure layer 2010 by reducing the thickness of the film layer between the light emitting device 201 and the first substrate 10, so that the light emitting efficiency of the light emitting structure layer 2010 of the fourth area a4 and the light emitting device 201 can be improved.
In some embodiments of the present invention, as shown in fig. 3, the film layers between the light emitting device 201 and the first substrate 10 include the second buffer layer 102, the gate insulating layer 103, the dielectric insulating layer 104, the interlayer dielectric layer 105, the passivation layer 106 and the second planarization layer 107 which are sequentially disposed on the first substrate 10, although the present invention is not limited thereto, and in other embodiments, the number of the film layers between the light emitting device 201 and the first substrate 10 is determined by the structure thereof.
In some embodiments of the present invention, the via 1013 penetrates through a plurality of film layers between the light emitting device 201 and the first substrate 10, as shown in fig. 3, the via 1013 penetrates through the gate insulating layer 103, the dielectric insulating layer 104, the interlayer dielectric layer 105, the passivation layer 106, and the second planarization layer 107 between the light emitting device 201 and the first substrate 10, of course, the present invention is not limited thereto, and in other embodiments, the via 1013 may also penetrate through any one of the second buffer layer 102, the gate insulating layer 103, the dielectric insulating layer 104, the interlayer dielectric layer 105, the passivation layer 106, and the second planarization layer 107 between the light emitting device 201 and the first substrate 10.
In other embodiments of the present invention, in order to further improve the light extraction efficiency of the light emitting device 201, the via 1013 may further penetrate all the layers between the light emitting device 201 and the first substrate 10, as shown in fig. 5, fig. 5 is a schematic cross-sectional view of a display panel according to another embodiment of the present invention, and the via 1013 penetrates all the layers between the light emitting device 201 and the first substrate 10, that is, penetrates the second buffer layer 102, the gate insulating layer 103, the dielectric insulating layer 104, the interlayer dielectric layer 105, the passivation layer 106 and the second planarization layer 107.
In some embodiments of the present invention, in a direction perpendicular to the second substrate 20, i.e., the Y direction, the height of the light emitting structure layer 2010 in the third area A3 is equal to or greater than the height of the light emitting structure layer 2010 in the fourth area a4, so as to facilitate the fabrication of the third electrode 2011 and the fourth electrode 2012, facilitate the electrical connection between the third electrode 2011 and the first electrode 1011, and facilitate the electrical connection between the fourth electrode 2012 and the second electrode 1012.
As shown in fig. 5, a height D1 of the light emitting structure layer 2010 of the third region A3 is equal to a height D2 of the light emitting structure layer 2010 of the fourth region a4 in a direction perpendicular to the second substrate 20, i.e., in the Y direction, as shown in fig. 6, fig. 6 is a schematic cross-sectional structure diagram of a display panel according to another embodiment of the present invention, and a height D1 of the light emitting structure layer 2010 of the third region A3 is greater than a height D2 of the light emitting structure layer 2010 of the fourth region a4 in the direction perpendicular to the second substrate 20, i.e., in the Y direction.
Certainly, in other embodiments, as shown in fig. 7, in a cross-sectional structure diagram of a display panel provided in another embodiment of the invention, as shown in fig. 7, in a direction perpendicular to the second substrate 20, that is, in a Y direction, fig. 7 shows that a height D2 of the light emitting structure layer 2010 of the fourth area a4 is greater than a height D1 of the light emitting structure layer 2010 of the third area A3, and the light emitting structure layer 2010 of the fourth area a4 is at least partially inserted into the through hole 1013, so as to improve the light emitting efficiency of the light emitting device 201, and simultaneously fill the through hole 1013 and the gap between the film layers on the first substrate 10 and the light emitting device 201, so as to avoid total reflection of the light emitted from the light emitting structure layer 2010 by the interface between the air layer in the gap and the gap top film layer, and avoid reduction of the light emitting efficiency of the light emitting device 201.
Taking the light emitting device 201 as an LED as an example, as shown in fig. 8 and 9, fig. 8 is a schematic cross-sectional structure of the light emitting device according to an embodiment of the present invention, and fig. 9 is a schematic cross-sectional structure of the light emitting device according to another embodiment of the present invention, where the light emitting structure layer 2010 includes an N-type semiconductor layer 2010a, a P-type semiconductor layer 2010c, and a light emitting layer 2010b located between the N-type semiconductor layer 2010a and the P-type semiconductor layer 2010c, where the third electrode 2011 is electrically connected to the N-type semiconductor layer 2010a, and the fourth electrode 2012 is electrically connected to the P-type semiconductor layer 2010 c.
In some embodiments of the present invention, the light emitting layer 2010b is a multi-quantum well layer, the N-type semiconductor layer 2010a is an N-type gallium nitride layer, and the P-type semiconductor layer 2010c is a P-type gallium nitride layer, but in other embodiments of the present invention, the N-type semiconductor layer 2010a, the P-type semiconductor layer 2010c, and the light emitting layer 2010b may also be film layers made of other materials, which is not described herein again.
In the structure shown in fig. 8, the surface of the P-type semiconductor layer 2010c is a flat surface such that the height of the light emitting structure layer 2010 of the fourth area a4 is equal to the height of the light emitting structure layer 2010 of the third area A3. However, the light emitting layer 2010b and the P-type semiconductor layer 2010c on top of the partial region of the N-type semiconductor layer 2010a are etched away so that the third electrode 2011 is electrically connected to the N-type semiconductor layer 2010 a. On this basis, the light emitting structure layer 2010 of the fourth region a4 may be thinned so that the height of the light emitting structure layer 2010 of the fourth region a4 is greater than the height of the light emitting structure layer 2010 of the third region A3. In the structure shown in fig. 9, the light emitting layer 2010b and the P-type semiconductor layer 2010c are protruded on the surface of the N-type semiconductor layer 2010a such that the height of the light emitting structure layer 2010 in the fourth area a4 is greater than the height of the light emitting structure layer 2010 in the third area A3.
In the structure shown in fig. 8, the insulating layer 204 is provided between the third electrode 2011 and the side edge of the P-type semiconductor layer 2010 c. In the structure shown in fig. 9, the side of the light emitting structure layer 2010 further has an inorganic layer 205 to avoid the influence of the subsequent process on the light emitting layer 2010b and the influence on the light emitting performance of the light emitting layer 2010 b. Of course, the inorganic layer 205 is also an insulating layer. In the structure shown in fig. 9, the N-type semiconductor layer 2010a in the region corresponding to the electrode needs to be patterned and thinned, so that the third electrode 2011 and the fourth electrode 2012 are located on the same plane, and are convenient for being attached to the first electrode 1011 and the second electrode 1012.
It should be noted that, the light emitting structure layer 2010 in the fourth area a4 may be completely inserted into the through hole 1013, and may or may not fill the through hole 1013 and the gap between the film layer on the first substrate 10 and the light emitting device 201, and the present invention is not limited thereto, and in other embodiments, the light emitting structure layer 2010 in the fourth area a4 may be partially inserted into the through hole 1013.
In some embodiments of the present invention based on any of the above embodiments, as shown in fig. 5, the display panel further includes an organic layer 50, and the organic layer 50 fills the through hole 1013 and the gap between the film layer on the first substrate 10 and the light emitting device 201, so as to prevent the light emitted from the light emitting structure layer 2010 from being totally reflected by the interface between the air layer in the gap and the film layer on the top of the gap, which affects the light emitting efficiency of the light emitting device 201.
In the structure shown in fig. 5, the height D1 of the light emitting structure layer 2010 of the third area A3 is equal to the height D2 of the light emitting structure layer 2010 of the fourth area a4 in the direction perpendicular to the second substrate 20, i.e., the Y direction, however, the present invention is not limited thereto, and in other embodiments, as shown in fig. 6, the height D1 of the light emitting structure layer 2010 of the third area A3 is greater than the height D2 of the light emitting structure layer 2010 of the fourth area a4 in the direction perpendicular to the second substrate 20, i.e., the Y direction. Alternatively, as shown in fig. 7, in the Y direction, which is a direction perpendicular to the second substrate 20, the height D2 of the light emitting structure layer 2010 of the fourth region a4 is greater than the height D1 of the light emitting structure layer 2010 of the third region A3.
And, the refractive index of the material of the organic layer 50 is the same as or different from the refractive index of the light emitting device 201 by less than 1, so as to improve the light extraction efficiency of the light emitting device 201 by filling the air gap between the first substrate 10 and the light emitting device 201 with the organic layer 50 having the same or similar refractive index as that of the light emitting device 201.
In some embodiments of the present invention, the light emitting device 201 is an LED, and since the refractive index of the LED is about 2.5, the closer the refractive index of the organic layer 50 is to the refractive index of the light emitting device 201, the higher the light extraction efficiency of the light emitting device 201. Based on this, the refractive index range of the material of the organic layer 50 includes 1.5 to 2.5.
On the basis of any of the above embodiments, in other embodiments of the present invention, as shown in fig. 10 and 11, fig. 10 is a schematic cross-sectional structure of a display panel according to another embodiment of the present invention, and fig. 11 is a schematic cross-sectional structure of a display panel according to another embodiment of the present invention, the display panel further includes a color conversion layer 60, and the color conversion layer 60 includes a phosphor layer, a quantum dot layer, and the like. Wherein the color conversion layer 60 is disposed within the through hole 1013 between the light emitting device 301 and the first substrate 10, such that the color conversion layer 60 generates different colors of light under excitation of light emitted from the light emitting device 201.
In some embodiments of the present invention, the light emitted from the light emitting device 201 is blue light, the color conversion layer 60 in some of the through holes 1013 generates red light under excitation of the blue light, and the color conversion layer 60 in some of the through holes 1013 generates green light under excitation of the blue light, so that display of a color image can be realized by the red light, the green light, and the blue light. In addition, in the embodiment of the present invention, the light emitting efficiency of the region corresponding to the light emitting device 201 can be improved by providing the color conversion layer 60 with a higher conversion rate.
In some embodiments of the present invention, as shown in fig. 11, an organic layer 50 is further disposed between the color conversion layer 60 and the light emitting device 301, and the refractive index of the material of the organic layer 50 is the same as or different from that of the light emitting device 201 by less than 1, so as to improve the light extraction efficiency of the light emitting device 201 by filling the air gap between the color conversion layer 60 and the light emitting device 201 with the organic layer 50 having the same or similar refractive index as that of the light emitting device 201.
In some embodiments of the present invention, as shown in fig. 12 and fig. 13, fig. 12 is a schematic top view structure diagram of a display panel according to another embodiment of the present invention, and fig. 13 is a schematic cross-sectional structure diagram of the display panel shown in fig. 12, the display panel further includes a light shielding layer 70, wherein the light shielding layer 70 is located between the first substrate 10 and the second substrate 20, and further, the light shielding layer 70 is located between the pixel driving circuit 1010 on the first substrate 10 and the second substrate 20.
In the direction perpendicular to the first substrate 10, i.e. in the Y direction, the projection of the light shielding layer 70 covers the projection of the pixel driving circuit 1010, and the light shielding layer 70 covers the sidewall of the light emitting device 201, so as to prevent the lateral light emission of the light emitting device 201 and the reflected light of the bottom metal substrate from irradiating the channel of the active device in the pixel driving circuit 1010, which causes the change of parameters such as the channel threshold value and the like, and affects the display effect.
In some embodiments of the present invention, as shown in fig. 12, the light shielding layer 70 only exposes the light emitting device 201, that is, the light shielding layer 70 not only covers the pixel driving circuit 1010, but also covers the traces between the pixel driving circuit 1010 and the electrodes, and the light shielding layer 70 wraps the peripheral side wall of the light emitting device 201 to reduce the influence of the lateral light and the reflected light on the structures such as the circuits to the maximum extent.
Fig. 12 is a plan view illustrating a light-shielding layer corresponding to the light-emitting device in the structure shown in fig. 13.
It should be noted that the light emitting device 201 in the embodiment of the present invention can emit light not only upwards, but also laterally and at the bottom, and the light emitted at the bottom is reflected by the metal substrate, i.e., the second substrate 20, back to the top of the light emitting device 201 and then emitted upwards through the first substrate 10. That is to say, in the embodiment of the present invention, the metal substrate is used as the growth substrate of the light emitting device 201, and the utilization rate of the light emitted from the light emitting device 201 can be improved by reflecting the light emitted from the bottom of the light emitting device 201 by the metal substrate.
An embodiment of the present invention further provides a display device, as shown in fig. 14, fig. 14 is a schematic diagram of a display device according to an embodiment of the present invention, and the display device P includes the display panel according to any one of the embodiments. In the embodiment of the present invention, the display device includes, but is not limited to, a smart band, a smart phone, a tablet computer, a digital camera, and the like.
The embodiment of the invention also provides a manufacturing method of the display panel, which is applied to manufacturing the display panel provided by any one of the above embodiments. As shown in fig. 15, fig. 15 is a flowchart of a manufacturing method of a display panel according to an embodiment of the present invention, where the manufacturing method includes:
s101: providing a first substrate, wherein one side of the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and the first area is provided with a pixel driving circuit, a first electrode and a second electrode;
in some embodiments of the present invention, the first substrate is a glass substrate. Referring to fig. 1, one side of a first substrate 10 has a plurality of structural units 101, and referring to fig. 2 and 3, the structural unit 101 includes a first region a1 and a second region a2, and the first region a1 has a pixel driving circuit 1010, a first electrode 1011, and a second electrode 1012.
S102: providing a second substrate, wherein one side of the second substrate is provided with a plurality of light emitting devices, each light emitting device comprises a light emitting structure layer, each light emitting structure layer comprises a third area and a fourth area, and each third area is provided with a third electrode and a fourth electrode;
in some embodiments of the present invention, the second substrate is a metal substrate. Referring to fig. 1, one side of the second substrate 20 has a plurality of light emitting devices 201, and referring to fig. 2 and 3, the light emitting device 201 includes a light emitting structure layer 2010, the light emitting structure layer 2010 includes a third region A3 and a fourth region a4, and the third region A3 has a third electrode 2011 and a fourth electrode 2012.
S103: the first substrate and the second substrate are fixedly attached, the light-emitting device is arranged corresponding to the structural unit, the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode, so that the pixel driving circuit drives the light-emitting structure layer to emit light;
after the structures such as the pixel driving circuit 1010, the first electrode 1011, and the second electrode 1012 on the first substrate 10 are manufactured, and after the structures such as the light emitting device 201 on the second substrate 20 are manufactured, referring to fig. 3, the side of the first substrate 10 having the structures such as the pixel driving circuit 1010 is attached to the side of the second substrate 20 having the structures such as the light emitting device 201, and it is required to ensure that the light emitting device 201 is disposed corresponding to the structure unit 101 in the attaching process, the third electrode 2011 is electrically connected to the first electrode 1011, and the fourth electrode 2012 is electrically connected to the second electrode 1012, so that the pixel driving circuit 1010 drives the light emitting structure layer 2010 or the light emitting device 201 to emit light, thereby displaying an image.
The second area a2 has a through hole 1013, the through hole 1013 penetrates at least one of the layers between the light emitting device 201 and the first substrate 10, and a projection of the through hole 1013 at least covers a projection of the light emitting structure layer 2010 of the fourth area a4 in a Y direction perpendicular to the second substrate 20, so that the light emitted from the light emitting structure layer 2010 of the fourth area a4 can exit through the through hole 1013.
In some embodiments of the present invention, at least one of the film layers between the light emitting device 201 of the second area a2 and the first substrate 10 may be etched to form the via 1013 in the process of forming the pixel driving circuit 1010, the first electrode 1011, the second electrode 1012, and the like on the first substrate 10.
Since the via 1013 penetrates at least one of the layers between the light emitting device 201 and the first substrate 10, and the projection of the via 1013 at least covers the projection of the light emitting structure layer 2010 of the fourth area a4 in the direction perpendicular to the second substrate 20, that is, in the Y direction, it is possible to reduce the thickness of the layer between the light emitting device 201 and the first substrate 10 and reduce the blocking of the light emitted by the layer on the top of the light emitting structure layer 2010 of the fourth area a4, so that the light emitting efficiency of the light emitting structure layer 2010 of the fourth area a4 and the light emitting device 201 can be improved.
In some embodiments of the present invention, organic layer 50 is disposed within via 1013. Specifically, the organic layer 50 may be formed by filling an organic material into the through hole 1013 after the through hole 1013 is formed by etching and before the first substrate 10 and the second substrate 20 are attached to each other. In some embodiments of the present invention, the through hole 1013 further includes a color conversion layer 60, that is, after the through hole 1013 is formed by etching and before the first substrate 10 and the second substrate 20 are attached, the color conversion layer 60 is formed by filling a color conversion material into the through hole 1013. In some embodiments of the present invention, the third electrode 2011 and the first electrode 1011 are electrically connected through a conductive adhesive, and the fourth electrode 2012 and the second electrode 1012 are electrically connected through a conductive adhesive. That is, in some embodiments of the present invention, the third electrode 2011 and the first electrode 1011 are electrically connected through the conductive adhesive, and the fourth electrode 2012 and the second electrode 1012 are electrically connected through the conductive adhesive, so that the first substrate 10 and the second substrate 20 are aligned and bonded.
Therefore, before the third electrode 2011 is electrically connected with the first electrode 1011 and the fourth electrode 2012 is electrically connected with the second electrode 1012, the method further includes:
forming conductive paste with corresponding patterns on the surfaces of the third electrode 2011 and the fourth electrode 2012;
aligning and attaching the third electrode 2011 and the first electrode 1011, and aligning and attaching the fourth electrode 2012 and the second electrode 1012;
the conductive paste is pressurized and heated from the second substrate 20 side, so that the third electrode 2011 and the first electrode 1011 are electrically connected through the conductive paste, and the fourth electrode 2012 and the second electrode 1012 are electrically connected through the conductive paste.
Of course, the present invention is not limited to this, and in other embodiments, the electrodes may be attached in other manners, which is not described herein again.
In some embodiments of the present invention, the display panel further includes a light-shielding layer. The light-shielding layer may be a black Planarization (PLN). In the process of manufacturing the display panel, after the pixel driving circuit 1010, the first electrode 1011, and the second electrode 1012 are formed on the first substrate 10, a whole layer of light-shielding layer may be formed, and then the light-shielding layer may be patterned to expose the light-emitting device 201, referring to fig. 12 and 13.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (14)
1. The display panel is characterized by comprising a first substrate and a second substrate which are oppositely arranged;
the side, facing the second substrate, of the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and each first area is provided with a pixel driving circuit, a first electrode and a second electrode;
the side of the second substrate facing the first substrate is provided with a plurality of light emitting devices, each light emitting device comprises a light emitting structure layer, each light emitting structure layer comprises a third area and a fourth area, and each third area is provided with a third electrode and a fourth electrode;
the light-emitting device is arranged corresponding to the structural unit, the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode, so that the pixel driving circuit drives the light-emitting structural layer to emit light;
and the second region is provided with a through hole which penetrates through at least one layer of the film layers between the light-emitting device and the first substrate, and the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth region in the direction vertical to the second substrate.
2. The display panel according to claim 1, wherein the display panel further comprises an organic layer filling the through hole and a gap between the film layer and the light emitting device;
and the refractive index of the material of the organic layer is the same as or different from the refractive index of the light emitting device by less than 1.
3. The display panel according to claim 2, wherein a height of the light emitting structure layer in the third region is equal to or greater than a height of the light emitting structure layer in the fourth region in a direction perpendicular to the second substrate.
4. The display panel according to claim 1 or 2, wherein a height of the light emitting structure layer in the fourth region is greater than a height of the light emitting structure layer in the third region in a direction perpendicular to the second substrate, and the light emitting structure layer in the fourth region is at least partially inserted into the through hole to fill the through hole and a gap between the film layer and the light emitting device.
5. The display panel according to claim 2, wherein the material of the organic layer has a refractive index ranging from 1.5 to 2.5.
6. The display panel according to claim 1, wherein the light emitting structure layer comprises an N-type semiconductor layer, a P-type semiconductor layer, and a light emitting layer between the N-type semiconductor layer and the P-type semiconductor layer;
the third electrode is electrically connected with the N-type semiconductor layer, and the fourth electrode is electrically connected with the P-type semiconductor layer.
7. The display panel according to claim 1, wherein the fourth region is located in a middle region of the light emitting structure layer;
the third electrode and the fourth electrode are respectively positioned at two sides of the fourth area.
8. The display panel of claim 1, wherein the display panel further comprises a color conversion layer;
the color conversion layer is arranged in the through hole and positioned between the light emitting device and the first substrate, so that the color conversion layer can generate light with different colors under the excitation of the light emitted by the light emitting device.
9. The display panel according to claim 1, further comprising a light-shielding layer;
the light shielding layer is located between the first substrate and the second substrate, in a direction perpendicular to the first substrate, a projection of the light shielding layer covers a projection of the pixel driving circuit, and the light shielding layer wraps a side wall of the light emitting device.
10. The display panel according to claim 1, wherein the third electrode is electrically connected to the first electrode through a conductive paste;
the fourth electrode is electrically connected with the second electrode through conductive adhesive.
11. The display panel according to claim 1, wherein the first substrate comprises a glass substrate; the second substrate includes a metal substrate.
12. A method for manufacturing a display panel, which is applied to the display panel according to any one of claims 1 to 11, the method comprising:
providing a first substrate, wherein one side of the first substrate is provided with a plurality of structural units, each structural unit comprises a first area and a second area, and the first area is provided with a pixel driving circuit, a first electrode and a second electrode;
providing a second substrate, wherein one side of the second substrate is provided with a plurality of light emitting devices, each light emitting device comprises a light emitting structure layer, each light emitting structure layer comprises a third area and a fourth area, and each third area is provided with a third electrode and a fourth electrode;
the first substrate and the second substrate are fixedly attached, the light-emitting device is arranged corresponding to the structural unit, the third electrode is electrically connected with the first electrode, and the fourth electrode is electrically connected with the second electrode, so that the pixel driving circuit drives the light-emitting structural layer to emit light;
the second area is provided with a through hole, the through hole penetrates through at least one layer of the film layers between the light-emitting device and the first substrate, and the projection of the through hole at least covers the projection of the light-emitting structure layer of the fourth area in the direction perpendicular to the second substrate.
13. The method of claim 12, wherein prior to electrically connecting the third electrode to the first electrode and the fourth electrode to the second electrode, further comprising:
forming conductive adhesive with corresponding patterns on the surfaces of the third electrode and the fourth electrode;
aligning and attaching the third electrode and the first electrode, and aligning and attaching the fourth electrode and the second electrode;
and pressurizing and heating the conductive adhesive from one side of the second substrate so as to electrically connect the third electrode and the first electrode through the conductive adhesive, and electrically connect the fourth electrode and the second electrode through the conductive adhesive.
14. A display device comprising the display panel according to any one of claims 1 to 11.
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| WO2023189420A1 (en) * | 2022-03-29 | 2023-10-05 | 株式会社ジャパンディスプレイ | Display device and method for producing display device |
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