CN109300966A - Display panel and preparation method thereof and display device - Google Patents
Display panel and preparation method thereof and display device Download PDFInfo
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- CN109300966A CN109300966A CN201811288950.3A CN201811288950A CN109300966A CN 109300966 A CN109300966 A CN 109300966A CN 201811288950 A CN201811288950 A CN 201811288950A CN 109300966 A CN109300966 A CN 109300966A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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Abstract
The invention discloses a kind of display panel and preparation method thereof and display devices, wherein the display panel include: include: array drive substrate, the array drive substrate includes: several subpixel regions being arranged in array, and is formed with driving circuit in the subpixel regions；Be formed in the array drive substrate with several one-to-one luminescent devices of the subpixel regions, part of luminescent device is Organic Light Emitting Diode, and luminescent device described in another part is inorganic light-emitting diode；The current output terminal of the driving circuit is connected with the corresponding luminescent device, for providing driving current to the corresponding luminescent device.Technical solution of the present invention can promote the service life and luminescent properties of OLED display.
Description
Technical field
The present invention relates to field of display technology, in particular to a kind of display panel and preparation method thereof and display device.
Background technique
Organic Light Emitting Diode (Organic Light Emitting Diode, abbreviation OLED) display device is right by its
Than spending, high, thickness is thin, visual angle is wide, reaction speed is fast, is not required to the features such as backlight, it is considered to be follow-on flat-panel screens is new
Emerging application technology.
It finds in practical applications, service life, the property of the OLED of different colours light is issued in existing OLED display panel
It can have differences, such as by taking three color of red, green, blue carries out the OLED display of colored display as an example, green light OLED's uses the longevity
Longest, efficiency highest are ordered, the service life of Nan dian Yao is most short, efficiency is minimum.
Wherein, the performance that service life is short, inefficiency OLED will have a direct impact on entire OLED display hinders OLED
The quick of display device is popularized.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of display panel and its
Preparation method and display device
To achieve the above object, the present invention provides a kind of display panels, comprising: array drive substrate, the array drive
Dynamic substrate includes: several subpixel regions being arranged in array, and is formed with driving circuit in the subpixel regions；
Be formed in the array drive substrate with several one-to-one luminescent devices of the subpixel regions, wherein
The part luminescent device is Organic Light Emitting Diode, and luminescent device described in another part is inorganic light-emitting diode；
The current output terminal of the driving circuit is connected with the corresponding luminescent device, is used for corresponding described luminous
Device provides driving current.
Optionally, the Organic Light Emitting Diode includes: the first electrode being cascading, organic function layer and second
Electrode, the first electrode are connected with the current output terminal of the driving circuit in the corresponding subpixel regions；
The inorganic light-emitting diode includes: third electrode, the 4th electrode and semiconductor wafer, and the third electrode passes through
The semiconductor wafer is connect with the 4th electrode, the third electrode and the driving circuit in corresponding subpixel regions
Current output terminal connection；
All the Organic Light Emitting Diodes share same second electrode, the second electrode extend to be provided with it is described inorganic
In the subpixel regions of light emitting diode and as the 4th electrode in each inorganic light-emitting diode.
Optionally, the subpixel regions include: red sub-pixel region, green sub-pixels region and blue subpixels area
Domain；
Wherein, luminescent device corresponding to the red sub-pixel region and the green sub-pixels region is organic light emission
Diode, luminescent device corresponding to the blue subpixels region are inorganic light-emitting diode；
Alternatively, luminescent device corresponding to the green sub-pixels region is Organic Light Emitting Diode, the red sub- picture
Luminescent device corresponding to plain region and the blue subpixels region is inorganic light-emitting diode.
Optionally, the luminescent device is formed with encapsulated layer backwards to the side of the array drive substrate.
Optionally, the inorganic light-emitting diode includes: micro-led.
To achieve the above object, the present invention also provides a kind of display devices, comprising: such as above-mentioned display panel.
To achieve the above object, the present invention also provides a kind of preparation methods of display panel, comprising:
Array drive substrate is provided, the array drive substrate includes: several subpixel regions being arranged in array, institute
It states and is formed with driving circuit in subpixel regions；
Formation and several one-to-one luminescent devices of the subpixel regions in the array drive substrate, wherein
The part luminescent device is Organic Light Emitting Diode, and luminescent device described in another part is inorganic light-emitting diode, the hair
Optical device is connected with the current output terminal of the corresponding driving circuit.
Optionally, the Organic Light Emitting Diode includes: first electrode, organic function layer and second electrode, described inorganic
Light emitting diode includes: third electrode, the 4th electrode and semiconductor wafer；
It is described to be formed in the array drive substrate and several one-to-one luminescent devices of the subpixel regions
The step of include:
The first electrode is formed in the part subpixel regions in the array drive substrate by Patternized technique
With the organic function layer, and through Patternized technique in another part subpixel regions in the array drive substrate
The third electrode and the semiconductor wafer are formed, the first electrode, the organic function layer are stacked, third electrode
It is connect with the semiconductor transistor, the first electrode and the third electrode are respectively and in the corresponding subpixel regions
The current output terminal of the driving circuit connects；
Conductive material thin film is formed to obtain second backwards to the side of the array drive substrate in the organic function layer
Electrode, all the Organic Light Emitting Diode shares the same second electrode, which is also used as each inorganic hair
The 4th electrode in optical diode.
Optionally, the Organic Light Emitting Diode includes: first electrode, organic function layer and second electrode, described inorganic
Light emitting diode includes: third electrode, the 4th electrode and semiconductor wafer；
It is described to be formed in the array drive substrate and several one-to-one luminescent devices of the subpixel regions
The step of include:
Several inorganic light-emitting diode chips are provided, the inorganic light-emitting diode chip include: the third electrode,
4th electrode and the semiconductor wafer, the third electrode are connected by the semiconductor wafer and the 4th electrode
It connects；
The first electrode is formed in the part subpixel regions in the array drive substrate by Patternized technique
With the organic function layer, and the inorganic light-emitting diode chip is transferred to by the array by transfer printing process and drives base
In another part subpixel regions on plate, the first electrode, the organic function layer are stacked, the first electrode and
The third electrode is connected with the current output terminal of the driving circuit in the corresponding subpixel regions respectively；
Conductive material thin film is formed to obtain second backwards to the side of the array drive substrate in the organic function layer
Electrode, all the Organic Light Emitting Diode shares the same second electrode, the second electrode and each inorganic light-emitting
The 4th electrode of diode connects.
Optionally, the subpixel regions include: red sub-pixel region, green sub-pixels region and blue subpixels area
Domain；
Wherein, luminescent device corresponding to the red sub-pixel region and the green sub-pixels region is organic light emission
Diode, luminescent device corresponding to the blue subpixels region are inorganic light-emitting diode；
Alternatively, luminescent device corresponding to the green sub-pixels region is Organic Light Emitting Diode, the red sub- picture
Luminescent device corresponding to plain region and the blue subpixels region is inorganic light-emitting diode.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for display panel that the embodiment of the present invention one provides；
Fig. 2 is the structural schematic diagram for another display panel that the embodiment of the present invention one provides；
Fig. 3 is a kind of structural schematic diagram of display panel provided by Embodiment 2 of the present invention；
Fig. 4 is a kind of flow chart of the preparation method for display panel that the embodiment of the present invention three provides；
Fig. 5 a is a kind of specific flow chart of step S2；
Fig. 5 b is another specific flow chart of step S2.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, the present invention is mentioned with reference to the accompanying drawing
A kind of display panel supplied and preparation method thereof and display device are described in detail.
Fig. 1 is a kind of structural schematic diagram for display panel that the embodiment of the present invention one provides, as shown in Figure 1, the display surface
Plate includes: array drive substrate 10, and array drive substrate 10 includes: several subpixel regions R/G/B for being arranged in array (attached
It is merely exemplary in figure to depict three subpixel regions), driving circuit is formed in the R/G/B of subpixel regions；Array drives base
Be formed on plate 10 with several one-to-one luminescent devices of subpixel regions R/G/B, part of luminescent device is OLED,
Another part luminescent device is inorganic light-emitting diode (Light Emitting Diode, abbreviation LED)；The electric current of driving circuit
Output end is connected with corresponding luminescent device, for providing driving current to corresponding luminescent device.
Wherein, the driving circuit array that array drive substrate 10 specifically includes underlay substrate and is set on underlay substrate,
Driving circuit array is formed with passivation layer (not illustrating) away from the side of underlay substrate, and the electricity of driving circuit is corresponded on passivation layer
The position of stream output end is formed with via hole, so that luminescent device is electrically connected by via hole with current output terminal；Driving circuit array
In driving circuit and subpixel regions correspond；In general, driving circuit should include at least driving a transistor, one
A switching transistor and a storage capacitance may also include other structures in certain driving circuit.Technical solution of the present invention pair
The particular circuit configurations of driving circuit are not construed as limiting, and those skilled in the art are it should also be understood that any have output driving electricity
The pixel-driving circuit of stream function is within the scope of protection of the invention.
In the present invention, OLED and LED be the luminescent device driven using electric current, the specific structure of the two
Under principle of luminosity:
OLED includes: first electrode 1, organic function layer 3 and second electrode 2, and three is stacked, first electrode 1 and
One of two electrodes 2 are cathode, and another one is that anode (is anode with first electrode 1 in the present embodiment, second electrode 2 is yin
Extremely example)；Organic function layer 3 includes at least organic luminous layer 301, certainly can also include for promoting Carrier Injection Efficiency
With the organic materials such as the hole injection layer 302 of efficiency of transmission, hole transmission layer 303, electron transfer layer 304, electron injecting layer 305
Film layer.The principle of luminosity of OLED is as follows: when there is electric current to flow through OLED, outside under alive driving hole and electronics respectively from
Anode and cathode is injected into organic function layer 3, and hole and electronics meet in the organic luminous layer in organic function layer 3, are multiple
Close, give off energy, the energy transmission to the luminous organic material in organic luminous layer so that the electronics of luminous organic material from
Ground state transition is to excitation state, but since excitation state is very unstable, and from excitation state, ground state is returned in transition to electrons again, releases simultaneously
Energy is released, photon is generated, is i.e. generation luminescence phenomenon.Wherein, the luminescent color of OLED depends on luminous organic material molecule
Type, the luminous intensity (brightness) of OLED depend on applying the size of electric current.
LED includes: third electrode 4, the 4th electrode 5 and semiconductor wafer 6, and third electrode 4 passes through semiconductor wafer 6 and the
The connection of four electrodes 5, third electrode 4 and the 4th electrode 5 can both be located at the same side of semiconductor wafer 6 or be located at semiconductor
Not ipsilateral (in Fig. 1 merely exemplary give third electrode 4 and the 4th electrode 5 is located at the not ipsilateral of semiconductor wafer 6) of chip 6
The case where.
One of third electrode 4 and the 4th electrode 5 are cathode, and another one is anode (in the present embodiment, with third electrode
4 be anode, and the 4th electrode 5 is negative extremely example)；Semiconductor wafer 6 includes at least: N-type semiconductor material layer 602, P-type semiconductor
Material layer 603 and the semiconductor material in transition zone 601 (also known as PN junction) between the two, semiconductor wafer 6 are nothing
Machine semiconductor material, by the compound for containing gallium (chemical formula Ga), arsenic (chemical formula As), phosphorus (chemical formula P), nitrogen (chemical formula N) etc.
It is made.The principle of luminosity of LED is as follows: when there is electric current to flow through LED (being applied with forward voltage on LED), from p-type semiconductor material
Layer 603 flow to the hole of N-type semiconductor material layer 602 near the PN junction in a few micrometers with the electronics in N-type semiconductor material layer
It is compound, the electronics of p-type semiconductor material layer 603 is flowed near the PN junction in a few micrometers and p-type from N-type semiconductor material layer 602
603 hole-recombination in semiconductor material layer, can spontaneous radiation fluorescence, i.e. generation luminescence phenomenon in above-mentioned recombination process.Its
In, the luminescent color of LED depends on the type of inorganic semiconductor material, and (gallium arsenide diode glows, gallium nitride diode hair
Blue light), the luminous intensity (brightness) of LED depends on applying the size of electric current.
Compared to OLED, LED has higher brightness, color saturation, lower power consumption and faster response speed etc.
Advantage；Importantly, the semiconductor wafer 6 in LED uses inorganic semiconductor material, than OLED, the service life is longer.
But the deficiencies such as LED is big with preparation difficulty, at high cost, yield is low.
In view of the factors such as the service life of OLED display, luminescent properties, preparation difficulty, cost, skill of the invention
The shorter OLED of service life in the prior art is replaced with the LED that can issue same color light by art scheme, and service life
Longer OLED is remained unchanged, i.e., part light-emitting component uses OLED, and another part light-emitting component uses LED, thus guaranteeing
Prepare difficulty and cost it is moderate in the case where, promote the service life and luminescent properties of OLED display.
It should be noted that technical solution of the present invention is not construed as limiting the specific structure of OLED and LED, it is only necessary to so that
The first electrode 1 of OLED and the third electrode 4 of LED connect with the current output terminal of driving circuit in corresponding sub-pixel unit respectively
It connects.
In the present invention, LED preferably micro-led (Micro LED), the power consumption of Micro LED only has OLED
50%, and can be suitably used for flexible display panels.In the present invention, it can directly be driven in array by multiple Patternized technique
LED is formed on substrate 10, LED chip can also first be prepared separately, LED chip is then fixed on by array by transfer printing process and is driven
On dynamic substrate 10.Wherein, when LED is formed directly into array drive substrate 10 by multiple Patternized technique, then third
Electrode 4 can be connected directly with the current output terminal of driving circuit in corresponding sub-pixel unit；Pass through transfer printing process shape as LED
At when in array drive substrate 10, needing third electrode 4 and driving circuit in corresponding sub-pixel unit using gold thread 8
Current output terminal connection.
Optionally, it there are three types of the subpixel regions R/G/B on display panel, specifically includes: red sub-pixel region R, green
Color subpixel regions G and blue subpixels region B.It is shown in Figure 1, as a kind of optional concrete scheme, red sub-pixel area
Luminescent device corresponding to domain R and green sub-pixels region G is OLED, and luminescent device corresponding to the B of blue subpixels region is
LED。
Fig. 2 is the structural schematic diagram for another display panel that the embodiment of the present invention one provides, as shown in Fig. 2, as again
A kind of optional concrete scheme, luminescent device corresponding to the G of green sub-pixels region are OLED, red sub-pixel region R and blue
Luminescent device corresponding to the B of subpixel regions is LED.
Compared to display panel shown in Fig. 1, the power consumption of display panel shown in Fig. 2 is lower, the service life is longer, but prepares
Difficulty is bigger, cost is higher.In practical applications, it can select to need to be arranged the subpixel regions of LED according to actual needs.
It should be noted that above-mentioned subpixel regions R/G/B includes: red sub-pixel region R, green sub-pixels region G
With blue subpixels region B, luminescent device corresponding to the G of green sub-pixels region is OLED, corresponding to the B of blue subpixels region
Luminescent device be luminescent device corresponding to LED, red sub-pixel region R and blue subpixels region B be OLED's or LED
Situation, only one of present invention optinal plan will not generate limitation to technical solution of the present invention.Those skilled in the art
Member is it should also be understood that but it is OLED, another part that luminescent device is arranged in all subpixel regions of part on a display panel
The technical solution that luminescent device is LED is set in subpixel regions, should belong to protection scope of the present invention.
In the present invention, optionally, whole OLED share same second electrode 2, which, which extends to, is provided with
The 4th electrode 5 (as shown in figs. 1 and 2) in the subpixel regions of LED and as each LED, at this time 2 He of second electrode of OLED
The 4th electrode 5 of LED is same electrode, can effectively simplify the structure of display panel.It is further preferred that second electrode 2/ the 4th
Electrode 5 is made of metal material, and the 4th electrode 5 of second electrode 2/ not only has conducting function at this time, is also equipped with reflection function,
So as to promote the light emission rate of OLED and LED.
Preferably, luminescent device is formed with encapsulated layer 7 backwards to the side of array drive substrate 10, and encapsulated layer 7 can will shine
Device is isolated with external environment, causes to corrode to luminescent device to avoid gas, the steam in external environment.
Fig. 3 is a kind of structural schematic diagram of display panel provided by Embodiment 2 of the present invention, as shown in figure 3, with Fig. 1 and figure
Unlike in 2, third electrode 4 and the 4th electrode 5 are located at the same side of semiconductor wafer 6 in display panel shown in Fig. 3, at this time
It needs to connect third electrode 4 with the current output terminal of corresponding driving circuit using conductor wire (such as gold thread 8)；In addition, the
It also needs that insulating layer 9 is arranged between two electrodes 2 and third electrode 4 (and gold thread 8).
It should be noted that in example 1 and example 2, the 4th electrode 5 can also be only with second electrode 2
Vertical existing two structures, the 4th electrode 5 can connect with second electrode 2, can not also connect with second electrode 2.When the 4th
(referring to shown in Fig. 3) when electrode 5 can be connect with second electrode 2, second electrode 2 can provide voltage signal to the 4th electrode 5,
There is no need to the signal lead for carrying out signal transmitting is additionally arranged for the 4th electrode 5.
Fig. 4 is a kind of flow chart of the preparation method for display panel that the embodiment of the present invention three provides, as shown in figure 4, should
The display panel that preparation method can prepare above-described embodiment one and embodiment two provides, the preparation method include:
Step S1, array drive substrate is provided, array drive substrate includes: several subpixel areas being arranged in array
Domain is formed with driving circuit in subpixel regions.
It in step sl, can be by existing pixel-driving circuit preparation process to form driving circuit on underlay substrate
Array.Detailed process is not be described in detail herein.
Step S2, formation and several one-to-one luminescent devices of subpixel regions in array drive substrate, wherein
Part luminescent device is OLED, and another part luminescent device is LED, the current output terminal of luminescent device and corresponding driving circuit
Connection.
Optionally, subpixel regions include: red sub-pixel region, green sub-pixels region and blue subpixels region.
Wherein, luminescent device corresponding to red sub-pixel region and green sub-pixels region is OLED, and blue subpixels region institute is right
The luminescent device answered is LED；Alternatively, luminescent device corresponding to green sub-pixels region be OLED, red sub-pixel region and
Luminescent device corresponding to blue subpixels region is LED.
In step s 2, OLED includes: first electrode, organic function layer and second electrode, and LED includes: third electrode,
Four electrodes and semiconductor wafer.
Alternatively, for forming display panel shown in Fig. 1.Fig. 5 a is a kind of detailed process of step S2
Figure, as shown in Figure 5 a, step S2 includes:
Step S201a, the first electricity is formed in the part subpixel regions in array drive substrate by Patternized technique
Pole and organic function layer, and is formed in another part subpixel regions in array drive substrate by Patternized technique
Three electrodes and semiconductor wafer, first electrode, organic function layer are stacked, and third electrode is connect with semiconductor transistor, the
One electrode and third electrode are connected with the current output terminal of driving circuit in corresponding subpixel regions respectively.
It should be noted that " Patternized technique " in the present invention refers to the technique that can form required pattern, such as:
Photoetching process (including: the techniques such as material film formation, photoresist coating, exposure, development, film etching, photoresist lift off) is covered
Film evaporation process, printing technology, printing technology.
In step S201a, specifically, firstly, by a photoetching process to be formed simultaneously first electrode and third electricity
Pole, wherein transparent conductive material can be selected in the material of first electrode and third electrode；Then, pixel circle is formed using photoetching process
Given layer (not shown) is formed with several receiving holes in pixel defining layer, and receiving hole is for accommodating the luminescent device being subsequently formed；
Then, organic function layer is formed in the receiving hole of part using one or many exposure mask evaporation process；Followed by, using primary or
Multiple patterning processes form semiconductor wafer.
It should be noted that the step of above-mentioned formation semiconductor wafer, can be located at before the step of forming pixel defining layer
It executes.
Step S202a, conductive material thin film is formed to obtain the backwards to the side of array drive substrate in organic function layer
Two electrodes, whole Organic Light Emitting Diodes share same second electrode, which is also used as in each inorganic light-emitting diode
The 4th electrode.
In step S202a, metal material is can be selected in the material of second electrode.
As another optinal plan, for forming display panel shown in Fig. 3.Fig. 5 b is specific for another of step S2
Flow chart, as shown in Figure 5 b, step S2 includes:
Step S201b, several LED chips are provided, LED chip includes: third electrode, the 4th electrode and semiconductor die
Piece, third electrode are connect by semiconductor wafer with the 4th electrode.
In step S201b, LED chip is formed on sapphire class underlay substrate by LED chip preparation process.
Step S202b, the first electricity is formed in the part subpixel regions in array drive substrate by Patternized technique
Pole and organic function layer, and another part sub-pix by transfer printing process being transferred to LED chip in array drive substrate
In region, first electrode, organic function layer are stacked, and first electrode and third electrode are respectively and in corresponding subpixel regions
The current output terminal of driving circuit connects.
In step S202b, the process for transferring LED chip is as follows: firstly, forming LED on sapphire class underlay substrate
Chip；Then, LED chip is separated from sapphire class underlay substrate by laser lift-off technique；Then, schemed using one
LED chip is adsorbed by the dimethyl silicone polymer transfer head of case from sapphire class underlay substrate, and by transfer head with
The contraposition of array drive substrate；Followed by the adsorbed LED chip of transfer head being attached to preset in array drive substrate
Subpixel regions, and remove transfer head；Finally, the third pole of LED chip is connect with current output terminal by gold thread.
The process for forming first electrode and organic function layer by Patternized technique is as follows, firstly, passing through photoetching process shape
At first electrode；Then, pixel defining layer is formed using photoetching process, is formed with several receiving holes in pixel defining layer, held
Hole is received for accommodating luminescent device；Then organic functions are formed in the receiving hole of part using one or many exposure mask evaporation process
Layer.
It should be noted that technical solution of the present invention can be in the step for forming first electrode to the step of transfer LED chip
It is executed before rapid, perhaps executes after the step of forming first electrode or held after the step of forming organic function layer
Row.
Before carrying out step S203b, the insulating layer of covering LED chip, and insulating layer need to be also formed above LED chip
The position of corresponding 4th electrode is formed with the through-hole for being connected to the 4th electrode.
Step S203b, conductive material thin film is formed to obtain the backwards to the side of array drive substrate in organic function layer
Two electrodes, whole OLED share same second electrode, and second electrode is connect by through-hole with the 4th electrode of each LED.
In step S203b, metal material is can be selected in the material of second electrode.
Optionally, upon step s 2 further include:
Step S3, encapsulated layer is formed backwards to the side of array drive substrate in luminescent device.
Encapsulated layer is formed backwards to the side of array drive substrate in luminescent device using existing packaging technology, to luminous
Device is protected.
The embodiment of the present invention four provides a kind of display device, including display panel, and wherein the display panel can be used
The display panel provided in embodiment one or embodiment two is stated, particular content can be found in above-described embodiment one and embodiment two
Description.
It should be noted that the display device in the present invention is specific can include: Electronic Paper, oled panel, mobile phone, plate electricity
Any products or components having a display function such as brain, television set, display, laptop, Digital Frame, navigator.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of display panel characterized by comprising array drive substrate, the array drive substrate includes: to arrange in array
Several subpixel regions of cloth are formed with driving circuit in the subpixel regions；
It is formed in the array drive substrate and several one-to-one luminescent devices of the subpixel regions, part
The luminescent device is Organic Light Emitting Diode, and luminescent device described in another part is inorganic light-emitting diode；
The current output terminal of the driving circuit is connected with the corresponding luminescent device, is used for the corresponding luminescent device
Driving current is provided.
2. display panel according to claim 1, which is characterized in that the Organic Light Emitting Diode includes: to stack gradually
First electrode, organic function layer and the second electrode of setting, the first electrode are described in the corresponding subpixel regions
The current output terminal of driving circuit connects；
The inorganic light-emitting diode includes: third electrode, the 4th electrode and semiconductor wafer, and the third electrode passes through described
Semiconductor wafer is connect with the 4th electrode, the electric current of the third electrode and the driving circuit in corresponding subpixel regions
Output end connection；
All the Organic Light Emitting Diode shares same second electrode, which, which extends to, is provided with the inorganic light-emitting
In the subpixel regions of diode and as the 4th electrode in each inorganic light-emitting diode.
3. display panel according to claim 1, which is characterized in that the subpixel regions include: red sub-pixel area
Domain, green sub-pixels region and blue subpixels region；
Wherein, luminescent device corresponding to the red sub-pixel region and the green sub-pixels region is organic light-emitting diodes
It manages, luminescent device corresponding to the blue subpixels region is inorganic light-emitting diode；
Alternatively, luminescent device corresponding to the green sub-pixels region is Organic Light Emitting Diode, the red sub-pixel area
Luminescent device corresponding to domain and the blue subpixels region is inorganic light-emitting diode.
4. display panel according to claim 1, which is characterized in that the luminescent device is backwards to the array drive substrate
Side be formed with encapsulated layer.
5. display panel according to any one of claims 1-4, which is characterized in that the inorganic light-emitting diode includes:
It is micro-led.
6. a kind of display device characterized by comprising such as above-mentioned display panel as claimed in any one of claims 1 to 5.
7. a kind of preparation method of display panel characterized by comprising
Array drive substrate is provided, the array drive substrate includes: several subpixel regions being arranged in array, the Asia
Driving circuit is formed in pixel region；
It is formed in the array drive substrate and several one-to-one luminescent devices of the subpixel regions, part
The luminescent device is Organic Light Emitting Diode, and luminescent device described in another part is inorganic light-emitting diode, the photophore
Part is connected with the current output terminal of the corresponding driving circuit.
8. preparation method according to claim 7, which is characterized in that the Organic Light Emitting Diode include: first electrode,
Organic function layer and second electrode, the inorganic light-emitting diode include: third electrode, the 4th electrode and semiconductor wafer；
The step formed in the array drive substrate with several one-to-one luminescent devices of the subpixel regions
Suddenly include:
The first electrode and institute are formed in the part subpixel regions in the array drive substrate by Patternized technique
Organic function layer is stated, and is formed in another part subpixel regions in the array drive substrate by Patternized technique
The third electrode and the semiconductor wafer, the first electrode, the organic function layer are stacked, third electrode and institute
Semiconductor transistor connection is stated, the first electrode and the third electrode are described in the corresponding subpixel regions respectively
The current output terminal of driving circuit connects；
In the organic function layer backwards to the side of array drive substrate formation conductive material thin film to obtain second electrode,
All the Organic Light Emitting Diode shares the same second electrode, which is also used as each two pole of the inorganic light-emitting
The 4th electrode in pipe.
9. preparation method according to claim 7, which is characterized in that the Organic Light Emitting Diode include: first electrode,
Organic function layer and second electrode, the inorganic light-emitting diode include: third electrode, the 4th electrode and semiconductor wafer；
The step formed in the array drive substrate with several one-to-one luminescent devices of the subpixel regions
Suddenly include:
There is provided several inorganic light-emitting diode chips, the inorganic light-emitting diode chip includes: the third electrode, described
4th electrode and the semiconductor wafer, the third electrode are connect by the semiconductor wafer with the 4th electrode；
The first electrode and institute are formed in the part subpixel regions in the array drive substrate by Patternized technique
Organic function layer is stated, and the inorganic light-emitting diode chip is transferred in the array drive substrate by transfer printing process
Another part subpixel regions in, the first electrode, the organic function layer are stacked, the first electrode and described
Third electrode is connected with the current output terminal of the driving circuit in the corresponding subpixel regions respectively；
In the organic function layer backwards to the side of array drive substrate formation conductive material thin film to obtain second electrode,
All the Organic Light Emitting Diode shares the same second electrode, the second electrode and each inorganic light-emitting diode
The 4th electrode connection.
10. preparation method according to claim 8, which is characterized in that the subpixel regions include: red sub-pixel area
Domain, green sub-pixels region and blue subpixels region；
Wherein, luminescent device corresponding to the red sub-pixel region and the green sub-pixels region is organic light-emitting diodes
It manages, luminescent device corresponding to the blue subpixels region is inorganic light-emitting diode；
Alternatively, luminescent device corresponding to the green sub-pixels region is Organic Light Emitting Diode, the red sub-pixel area
Luminescent device corresponding to domain and the blue subpixels region is inorganic light-emitting diode.
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