CN112420901B - Micro light-emitting diode and display panel - Google Patents

Micro light-emitting diode and display panel Download PDF

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Publication number
CN112420901B
CN112420901B CN202011230104.3A CN202011230104A CN112420901B CN 112420901 B CN112420901 B CN 112420901B CN 202011230104 A CN202011230104 A CN 202011230104A CN 112420901 B CN112420901 B CN 112420901B
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light
layer
emitting
chip body
conversion unit
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CN112420901A (en
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樊勇
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2020/130040 priority patent/WO2022095129A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The application provides a micro light-emitting diode, which comprises a light-emitting chip body and a light conversion structure, wherein the light conversion structure is arranged on the light-emitting side of the light-emitting chip body and is used for converting light emitted by the light-emitting chip body into white light; the light conversion structure comprises a buffer layer and a light conversion unit, wherein at least one groove is formed in the buffer layer, and the light conversion unit is accommodated in the groove. The application improves the light energy utilization rate of the blue light chip and reduces the energy consumption of the product.

Description

Micro light-emitting diode and display panel
Technical Field
The application relates to the technical field of display, in particular to a miniature light-emitting diode and a display panel.
Background
The Micro Light Emitting Diode (Micro Light Emitting Diode) display has the advantages of high reliability, high color gamut, high brightness, high transparency, high pixel density and the like, has low packaging requirements, is very easy to realize flexible and seamless splicing display, and is a display with great development potential in the future.
Currently, in the full-color display technology of Micro LED displays, a scheme of blue light + a light-induced conversion layer is generally adopted to realize full-color display. Specifically, blue chips are respectively transferred at the positions of a red pixel, a green pixel and a blue pixel of a driving substrate, then red quantum dots and green quantum dots are respectively printed on a color film substrate, and color conversion is realized by the alignment bonding of an upper substrate and a lower substrate, so that full-color display is realized. Since this scheme needs to prevent color crosstalk between red, green, and blue pixels, a black light shielding structure is generally separately disposed between quantum dots corresponding to adjacent pixels.
However, when red and green quantum dots are formed on the color film substrate by adopting an inkjet printing mode to realize color conversion, the thickness of the black shading structure between adjacent quantum dots is larger, so that part of light emitted by the blue light chip is lost due to absorption of the black shading structure, the light energy utilization rate of the blue light chip is greatly reduced, and the energy consumption of the product is increased.
Disclosure of Invention
The application provides a miniature light-emitting diode and a display panel, which aim to solve the technical problem that the light energy utilization rate of a blue light chip is reduced.
The application provides a miniature light emitting diode, it includes:
a light emitting chip body; and
the light conversion structure is arranged on the light emitting side of the light emitting chip body and is used for converting light emitted by the light emitting chip body into white light;
the light conversion structure comprises a buffer layer and a light conversion unit, wherein at least one groove is formed in the buffer layer, and the light conversion unit is accommodated in the groove.
In the micro light emitting diode of the present application, the number of the grooves is plural, and the light conversion unit is accommodated in each of the grooves.
In the micro light-emitting diode, the distance between the adjacent grooves increases progressively from two sides of the buffer layer to the center of the buffer layer.
In the micro light emitting diode of the present application, light emitted by the light emitting chip body is blue light;
the material of the light conversion unit comprises red quantum dots and green quantum dots.
In the micro light emitting diode of the present application, the light emitting chip body includes:
a first electrode;
the second electrode is arranged adjacent to the first electrode;
a current spreading layer disposed on the second electrode;
the first semiconductor layer is arranged on the current diffusion layer;
a light emitting layer disposed on the first semiconductor layer; and
the second semiconductor layer is arranged on the light emitting layer and covers the first electrode, and the light conversion structure is positioned on the second semiconductor layer.
In the micro light emitting diode of the present application, the micro light emitting diode further includes a blocking structure layer disposed on the light conversion structure;
the blocking structure layer comprises a first inorganic layer, an organic layer and a second inorganic layer which are sequentially arranged on the light conversion structure.
The present application also provides a display panel, which includes:
a drive substrate; and
the micro light-emitting diodes are arranged on the driving substrate and are electrically connected to the driving substrate;
wherein the micro light emitting diode includes:
a light emitting chip body; and
the light conversion structure is arranged on the light emitting side of the light emitting chip body and is used for converting light emitted by the light emitting chip body into white light;
the light conversion structure comprises a buffer layer and a light conversion unit, wherein at least one groove is formed in the buffer layer, and the light conversion unit is accommodated in the groove.
In the display panel of the present application, the number of the grooves is plural, and each of the grooves accommodates the light conversion unit therein.
In the display panel of the application, the distance between the adjacent grooves increases progressively from two sides of the buffer layer to the center of the buffer layer.
In the display panel of the present application, the display panel further includes a light shielding unit, and the light shielding unit is disposed between the adjacent micro light emitting diodes.
Compared with a micro light-emitting diode in the prior art, the micro light-emitting diode provided by the application integrates the light conversion unit on the light-emitting chip body, specifically, at least one groove is formed in the buffer layer, and the light conversion unit is accommodated in the groove, so that the distance between the light-emitting chip body and the light conversion unit is shortened, light emitted by the light-emitting chip body can be effectively absorbed by the light conversion unit, the light energy utilization rate of the light-emitting chip body is improved, the loss of the light energy is reduced, and the energy consumption of a product is further reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a micro light emitting diode provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a display panel provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a micro light emitting diode in a display panel according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the present disclosure.
The embodiment of the present application provides a micro light emitting diode 100, which includes a light emitting chip body 10, a light conversion structure 11, a barrier structure layer 12 and a protection layer 13. The light conversion structure 11 is disposed on the light emitting side of the light emitting chip body 10 and is used for converting light emitted from the light emitting chip body 10 into white light. The barrier structure layer 12 is disposed on the light conversion structure 11. The protective layer 13 is disposed on the periphery of the light emitting chip body 10. The light conversion structure 11 includes a buffer layer 111 and a light conversion unit 112. The buffer layer 111 is provided with at least one groove 111A. The light conversion unit 112 is accommodated in the groove 111A.
Therefore, in the micro light emitting diode 100 provided in the embodiment of the present application, the light conversion unit 112 is integrated on the light emitting chip body 10, specifically, the at least one groove 111A is disposed on the buffer layer 111, and the light conversion unit 112 is accommodated in the groove 111A, so that the distance between the light emitting chip body 10 and the light conversion unit 112 is shortened, and light emitted by the light emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization rate of the light emitting chip body 10 and reducing the loss of light energy.
In the embodiment of the present application, the light emitted from the light emitting chip body 10 is blue light. The material of the light conversion unit 112 includes red quantum dots and green quantum dots. The light conversion unit 112 is formed by mixing red quantum dots and green quantum dots in a certain ratio, and the specific ratio of the red quantum dots to the green quantum dots can be set according to actual conditions, which is not limited in the present application.
In some embodiments, the material of the light conversion unit 112 may also be yellow quantum dots or other light conversion materials capable of converting blue light into white light.
In addition, in some embodiments, the light emitted from the light emitting chip body 10 is violet light. At this time, the material of the light conversion unit 112 may be a mixture of red quantum dots, green quantum dots, and blue quantum dots, or may also be other light conversion materials that convert violet light into white light, which is not described herein again.
Further, in the embodiment of the present application, the light emitting chip body 10 includes:
a first electrode 101;
a second electrode 102, the second electrode 102 and the first electrode 101 are adjacently arranged;
a current spreading layer 103, the current spreading layer 103 is disposed on the second electrode 102;
a first semiconductor layer 104, wherein the first semiconductor layer 104 is disposed on the current diffusion layer 103;
a light-emitting layer 105, the light-emitting layer 105 being disposed on the first semiconductor layer 104; and
a second semiconductor layer 106, the second semiconductor layer 106 is disposed on the light emitting layer 105 and covers the first electrode 101, and the light conversion structure 11 is disposed on the second semiconductor layer 106.
It should be noted that the structure of the light emitting chip body 10 in the present application is only illustrated for convenience of describing the embodiments of the present application, but is not to be construed as limiting the present application.
The first electrode 101 is an N-type electrode. The second electrode 102 is a P-type electrode. The materials of the first electrode 101 and the second electrode 102 may be one or more of metals or alloys such as indium, tin, zinc, nickel, silver, aluminum, gold, platinum, palladium, magnesium, tungsten, and the like, and the materials of the first electrode 101 and the second electrode 102 may be the same or different, which is not limited in this application.
The current spreading layer 103 serves to increase the light emitting area of the light emitting chip body 10. The material of the current diffusion layer 103 may be graphene, indium tin oxide, zinc oxide, nickel, silver, aluminum, gold, platinum, palladium, magnesium, tungsten, and other materials with good conductivity and reflection performance, and the material of the current diffusion layer 103 may also be selected according to actual conditions, which is not limited in this application.
The first semiconductor layer 104 is a P-type gallium nitride layer. Specifically, the first semiconductor layer 104 is a magnesium-doped gallium nitride layer.
The second semiconductor layer 106 is an N-type gallium nitride layer. Specifically, the second semiconductor layer 106 is a silicon-doped gallium nitride layer.
The light emitting layer 105 is a gallium nitride quantum well layer. Specifically, the light emitting layer 105 may be an indium gallium nitride/gallium nitride layer repeatedly arranged in sequence.
In the present embodiment, the materials of the first semiconductor layer 104, the light emitting layer 105 and the second semiconductor layer 106 may be specifically selected according to the type of the light emitting chip body 10, and the present embodiment is not to be construed as limiting the present application.
In addition, in the embodiment of the present application, the protection layer 13 plays a role of blocking water and oxygen, and is used to reduce the decay rate of the performance of each film layer in the micro light emitting diode 100, so as to improve the service life of the micro light emitting diode 100. The material of the protective layer 13 may be silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, or other material with good thermal conductivity, and the material of the protective layer 13 is not particularly limited in this application.
In the embodiment of the present application, the material of the buffer layer 111 is gallium nitride. The thickness of the buffer layer 111 is between 1 micron and 6 microns, and the specific thickness of the buffer layer 111 can be set according to actual conditions, which is not described herein again.
In the embodiment of the present application, the number of the grooves 111A is plural. Each of the grooves 111A accommodates a light conversion unit 112 therein.
In the present application, the sizes of the plurality of grooves 111A may be the same or different, and the embodiment of the present application is described by taking the case where the sizes of the plurality of grooves 111A are the same, but the present application is not limited thereto. In the present application, the cross-sectional shape of the groove 111A may be a square shape, a trapezoid shape, or the like, and in the present embodiment, the cross-sectional shape of the groove 111A is merely an example of a trapezoid shape, but the present application is not limited thereto.
Further, the specific number of the grooves 111A may be set according to actual situations, which is not limited in the present application. The depth of the groove 111A can be set according to the thickness of the buffer layer, and will not be described herein.
It can be understood that, when the blue light emitted from the light emitting chip body 10 is emitted to the light conversion unit 112, the red quantum dots and the green quantum dots in the light conversion unit 112 are excited by the blue light to respectively emit red light and green light, and the red light, the green light and the blue light are mixed to form white light, so as to obtain the micro light emitting diode 100 capable of emitting white light.
In this embodiment, when the thickness of the buffer layer 111 is fixed, the plurality of grooves 111A are disposed on the buffer layer 111 to provide a light mixing space for the adjacent light conversion units 112, so that the light conversion units 112 in a single micro light emitting diode can be uniformly distributed, thereby improving the uniformity of the emergent light of the micro light emitting diode. Further, the larger the number of the grooves 111A, the smaller the distance between the adjacent grooves 111A, the better the light mixing effect between the adjacent light conversion units 112, so that the uniformity of the emitted light of the micro light emitting diode is better.
Furthermore, because the heat dissipation performance of the region where the red and green quantum dots in the light conversion unit 112 are located is poor, the arrangement of the plurality of grooves 111A in this embodiment can not only disperse the quantum dots in a single micro light emitting diode 100, but also because of the existence of the inner groove wall of the groove 111A, the arrangement of the plurality of grooves 111A increases the contact area between the quantum dots and the groove wall, thereby effectively reducing the risk of poor heat dissipation performance due to over concentration of the quantum dots, improving the heat dissipation effect of the micro light emitting diode, and being beneficial to improving the service life of the micro light emitting diode.
Further, in some embodiments, the distance between adjacent grooves 111A increases in a direction from both sides of the buffer layer 111 toward the center of the buffer layer 111.
It is understood that since the brightness of light at both sides of the buffer layer 111 is lower than that of light at the center of the buffer layer 111, the light emitted from the micro light emitting diode is not uniform. Under the condition that the sizes of the grooves 111A are the same, the distance between the adjacent grooves 111A at the center of the buffer layer 111 is larger than the distance between the adjacent grooves 111A at the two sides, so that the occupied area of the light conversion unit 112 at the center of the buffer layer 111 is reduced compared with the two sides, that is, the brightness of the emergent light at the edge of the buffer layer 111 is increased relative to the brightness of the emergent light at the center of the buffer layer 111, and further the phenomenon that the brightness of the edge of the buffer layer 111 is darker than that at the center is relieved, so that the uniformity of the emergent light of the micro light-emitting diode is improved, and the improvement of the light-emitting performance of the micro light-emitting diode is facilitated.
In some embodiments, the light converting structure 11 comprises a first region and a second region. The first regions and the second regions are alternately arranged. The grooves 111A include a first groove and a second groove. The first groove is disposed in the first region. The second groove is disposed in the second region. A second groove is arranged between the adjacent first grooves. The material of the light conversion unit 112 in the first groove is red quantum dots and green quantum dots. The material of the light conversion unit 112 in the second groove is yellow quantum dots.
It can be understood that, since the luminous efficiency of the yellow quantum dots is lower than that of the red and green quantum dots, the yellow quantum dots and the red and green quantum dots are arranged in a crossed manner, and the yellow quantum dots are arranged between the adjacent red and green quantum dots, so that the luminous brightness of the middle region of the buffer layer 111 can be reduced, and the uniformity of the emergent light of the micro light-emitting diode can be improved.
In the embodiment of the present application, the barrier structure layer 12 includes a first inorganic layer 121, an organic layer 122, and a second inorganic layer 123 sequentially disposed on the light conversion structure 11.
Because the organic material has the effect of releasing stress, the embodiment can avoid the cracking of the film layer of the micro light-emitting diode due to the influence of heat or mechanical stress by arranging the organic layer 122 in the separation structure layer 12, thereby being beneficial to improving the performance of the micro light-emitting diode and further prolonging the service life of the micro light-emitting diode.
The first inorganic layer 121 and the second inorganic layer 123 may be made of silicon oxide, silicon nitride, silicon oxynitride, or other inorganic materials with good water and oxygen blocking effects. The material of the organic layer 122 may be an organic material such as polyimide. The material of the first inorganic layer 121 and the material of the second inorganic layer 123 may be the same or different, and the present application is not limited thereto.
Further, the method for manufacturing the micro light emitting diode 100 provided by the embodiment of the present application specifically includes the following steps:
s101: a substrate is provided.
Optionally, the substrate base plate may be a sapphire substrate, a silicon substrate, or a silicon carbide substrate. In the embodiment of the present application, the substrate base plate is a sapphire substrate.
S102: forming a patterned mask layer on a substrate base plate;
specifically, step S102 includes the following steps:
s1021: a mask layer is formed on a substrate.
The mask layer may be made of silicon oxide or silicon nitride. In the embodiment of the present application, the material of the mask layer is silicon oxide.
S1022: forming a patterned mask layer;
specifically, the mask layer is etched by an etching process to form a patterned mask layer. Specifically, in the embodiment of the present application, the patterned mask layer is a strip-shaped mask layer, that is, a plurality of strip-shaped grooves are formed in the mask layer, and the substrate base plate is exposed by the strip-shaped grooves.
Due to the polar effect of the electric field, when the current density is increased, the blue shift phenomenon can occur to the light-emitting wavelength of the light-emitting chip body, the arrangement enables the gallium nitride crystal to grow transversely along the extension direction of the strip-shaped groove, so that the generation of the semipolar gallium nitride crystal is facilitated, the blue shift phenomenon of the light-emitting wavelength is further improved, the consistency of the light-emitting wavelength can be kept under the drive of the variable current of the micro light-emitting diode, and the improvement of the light-emitting performance of the micro light-emitting diode is facilitated.
In some embodiments, the patterned mask layer may also have other shapes, which may be selected according to the actual application requirement, and this is not limited in this application.
S1023: a buffer layer 111 is formed on the patterned mask layer.
Firstly, a metal organic compound chemical vapor deposition technology is adopted to grow gallium nitride crystals in the strip-shaped grooves, so that the gallium nitride crystals grow along the extending direction of the strip-shaped grooves.
Then, when the thickness of the gan crystal is equal to the thickness of the mask layer, the gan crystal is grown continuously so that the thickness of the gan crystal exceeds the thickness of the mask layer, thereby forming the buffer layer 111.
Specifically, the thickness of the buffer layer 111 is between 1 micron and 6 microns, and the specific thickness of the buffer layer 111 may be set according to practical situations, which is not limited in the present application.
S103: the light emitting chip body 10 is formed on the buffer layer 111.
First, the second semiconductor layer 106, the light emitting layer 105, and the first semiconductor layer 104 are sequentially formed on the buffer layer 111 using a metal organic compound chemical vapor deposition technique. Wherein the side of the second semiconductor layer 106 facing the light emitting layer 105 has an exposed portion.
Next, a current diffusion layer 103 is formed on the first semiconductor layer 104 by magnetron sputtering, thermal evaporation, or the like.
Then, the first electrode 101 is formed on the exposed portion of the second semiconductor layer 106, and the second electrode 102 is formed on the current diffusion layer 103. The second semiconductor layer 106, the light emitting layer 105, the first semiconductor layer 104, the current diffusion layer 103, the first electrode 101, and the second electrode 102 constitute the light emitting chip body 10.
S104: a protective layer 13 is formed on the outer side of the light emitting chip body 10 and the buffer layer 111 to obtain the micro light emitting diode 100 to be formed.
S105: a light conversion structure 11 is formed on the light emitting chip body 10.
Specifically, step S105 includes the following steps:
step S1051: stripping the substrate base plate;
step S1052: a temporary substrate is provided and the micro-leds 100 to be formed are placed on the temporary substrate.
The material of the temporary substrate may be selected according to actual conditions, which is not limited in this application.
Step S1053: obtaining a plurality of grooves 111A on the buffer layer 111;
specifically, the strip-shaped mask layer is etched by an etching process to remove the strip-shaped mask layer, so that strip-shaped grooves 111A are formed at the positions of the strip-shaped mask layer. Further, a plurality of grooves 111A are formed in the buffer layer 111.
Step S1054: a light converting structure 11 is formed.
Specifically, a mixture of red quantum dots and green quantum dots is formed within the groove 111A to form the light conversion unit 112. The buffer layer 111 and the light conversion unit 112 after the strip mask layer is removed form the light conversion structure 11.
The method for forming the light conversion unit 112 may be an atomized spray method, a blade method, etc., and the method for forming the light conversion unit 112 is not particularly limited in this application.
S106: a barrier structure layer 12 is formed on the light conversion structure 11.
Specifically, the second inorganic layer 123, the organic layer 122, and the first inorganic layer 121 are sequentially formed on the light conversion structure 11. The forming methods of the second inorganic layer 123, the organic layer 122 and the first inorganic layer 121 may refer to the forming methods of the inorganic film layer and the organic film layer in the prior art, and are not described herein again.
Thus, the method for manufacturing the micro light emitting diode 100 in the embodiment of the present application is completed.
The micro light emitting diode 100 provided in the embodiment of the present application integrates the light conversion unit 112 on the light emitting chip body 10, specifically, the plurality of grooves 111A are formed on the buffer layer 111, and the light conversion unit 112 is accommodated in the grooves 111A, so that the distance between the light emitting chip body 10 and the light conversion unit 112 is shortened, and light emitted by the light emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization rate of the light emitting chip body 10, and reducing the loss of light energy. In addition, the arrangement of the plurality of grooves 111A in the embodiment is favorable for improving the uniformity of the emergent light of the micro light-emitting diode, thereby being favorable for improving the light-emitting performance of the micro light-emitting diode.
Please refer to fig. 2 and fig. 3, wherein fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure; fig. 3 is a schematic structural diagram of a micro light emitting diode in a display panel according to an embodiment of the present disclosure.
The embodiment of the present application provides a display panel 200, which includes a driving substrate 20, a plurality of micro light emitting diodes 100, and a color film substrate 21. The micro light emitting diodes 100 are disposed on the driving substrate 20 and electrically connected to the driving substrate 20. The color filter substrate 21 is disposed on a side of the micro light emitting diode 100 away from the driving substrate 20. The micro light emitting diode 100 includes a light emitting chip body 10 and a light conversion structure 11. The light conversion structure 11 is disposed on the light emitting side of the light emitting chip body 10 and is used for converting light emitted from the light emitting chip body 10 into white light. The light conversion structure 11 includes a buffer layer 111 and a light conversion unit 112. The buffer layer 111 is provided with at least one groove 111A. The light conversion unit 112 is accommodated in the groove 111A.
Therefore, the display panel 200 provided in the embodiment of the present application integrates the light conversion unit 112 on the light emitting chip body 10, specifically, by providing at least one groove 111A on the buffer layer 111 and accommodating the light conversion unit 112 in the groove 111A, the distance between the light emitting chip body 10 and the light conversion unit 112 is further shortened, so that light emitted by the light emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization rate of the light emitting chip body 10 and reducing the energy consumption of the display panel.
In the prior art, when an inkjet printing method is used to form red quantum dots and green quantum dots on a color film substrate to realize color conversion, a black shading structure is usually disposed between quantum dots corresponding to adjacent pixels to avoid color crosstalk between pixels. However, in the above arrangement, the cost of forming the quantum dots using the inkjet printing technique is high and the process is complicated.
The present embodiment can omit the inkjet printing process by integrating the light conversion unit 112 on the light emitting chip body 10, thereby contributing to saving the process cost and reducing the dependency on the equipment. In addition, by integrating the light conversion unit 112, a black shading structure between quantum dots corresponding to adjacent pixels on the original color film substrate 21 is omitted, thereby further reducing the process cost.
It should be noted that, in the embodiment of the present application, the detailed structure and the material of each film layer of the micro light emitting diode 100 may refer to the description of the micro light emitting diode 100 in the foregoing embodiment, and are not described herein again.
In the embodiment of the present application, the display panel 200 further includes a light shielding unit 22. The light shielding unit 22 is disposed between the adjacent micro light emitting diodes 100. Specifically, a side of the light shielding unit 22 away from the driving substrate 20 is flush with a side of the light conversion structure 11 away from the substrate. Therefore, in the present embodiment, the light-shielding units 22 are shared between the light conversion structures 11 corresponding to the adjacent micro light-emitting diodes 100 and between the light-emitting chip bodies 10, thereby saving the process cost.
In some embodiments, the side of the light shielding unit 22 away from the driving substrate 20 is flush with the side of the barrier structure layer 12 away from the substrate. This setting can prevent to take place the cross color between the adjacent miniature emitting diode 100 by the at utmost, can avoid the loss of luminescent chip body 10 light energy, and then has further improved the light energy utilization ratio of luminescent chip body 10 to the luminous efficacy of light conversion unit 112 has been improved.
In the embodiment of the present application, the color filter substrate 21 includes a substrate 21A and a color filter layer 21B disposed on the substrate 21A. The color filter layer 21B is located on the side of the base 21A close to the drive substrate 20. The color filter layer 21B includes a red filter block 211, a green filter block 212, and a blue filter block 213 which are adjacently disposed. In addition, the color filter substrate 21 further includes a black matrix 214 disposed between the red filter block 211, the green filter block 212, and the blue filter block 213.
It should be noted that, the structures of the color filter substrate 21 and the driving substrate 20 in the embodiment of the present application are merely schematic and used to facilitate description of the embodiment of the present application, but the present application is not limited thereto.
In addition, in the embodiment of the present application, the specific structure of the driving substrate 20 may refer to the prior art, and is not described herein again.
The display panel 200 provided in the embodiment of the present application integrates the light conversion unit 112 on the light emitting chip body 10, specifically, by providing at least one groove 111A on the buffer layer 111 and accommodating the light conversion unit 112 in the groove 111A, the distance between the light emitting chip body 10 and the light conversion unit 112 is further shortened, so that light emitted by the light emitting chip body 10 can be effectively absorbed by the light conversion unit 112, thereby improving the light energy utilization rate of the light emitting chip body 10 and reducing the energy consumption of the display panel. In addition, the embodiment omits the ink-jet printing technology, thereby simplifying the process and saving the process cost.
Compared with a micro light-emitting diode in the prior art, the micro light-emitting diode provided by the application integrates the light conversion unit on the light-emitting chip body, specifically, at least one groove is formed in the buffer layer, and the light conversion unit is accommodated in the groove, so that the distance between the light-emitting chip body and the light conversion unit is shortened, light emitted by the light-emitting chip body can be effectively absorbed by the light conversion unit, the light energy utilization rate of the light-emitting chip body is improved, the loss of the light energy is reduced, and the energy consumption of a product is further reduced.
The foregoing provides a detailed description of embodiments of the present application, and the principles and embodiments of the present application have been described herein using specific examples, which are presented solely to aid in the understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A micro light emitting diode, comprising:
the LED chip comprises a light-emitting chip body, a light-emitting layer and a light-emitting diode, wherein the light-emitting chip body comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged; and
the light conversion structure is arranged on the light emitting side of the light emitting chip body, is positioned on one side of the second semiconductor layer, which is far away from the light emitting layer, and is used for converting light emitted by the light emitting chip body into white light;
the light conversion structure comprises a buffer layer and a light conversion unit, wherein at least one groove is formed in one side, far away from the second semiconductor layer, of the buffer layer, the light conversion unit is contained in the groove, and the light conversion unit and the second semiconductor layer are arranged at intervals.
2. The micro light-emitting diode of claim 1, wherein the number of the grooves is plural, and each of the grooves accommodates the light conversion unit therein.
3. The micro light-emitting diode of claim 2, wherein the distance between adjacent grooves increases from both sides of the buffer layer to the center of the buffer layer.
4. The micro light-emitting diode of claim 1, wherein the light emitted from the light-emitting chip body is blue light;
the material of the light conversion unit comprises red quantum dots and green quantum dots.
5. The micro light-emitting diode of claim 1, wherein the light-emitting chip body comprises:
a first electrode;
the second electrode is arranged adjacent to the first electrode;
the current diffusion layer is arranged on the second electrode, and the first semiconductor layer is arranged on the current diffusion layer;
the second semiconductor layer covers the first electrode.
6. The micro light-emitting diode of claim 1, further comprising a barrier structure layer disposed on the light conversion structure;
the blocking structure layer comprises a first inorganic layer, an organic layer and a second inorganic layer which are sequentially arranged on the light conversion structure.
7. A display panel, comprising:
a drive substrate; and
the micro light-emitting diodes are arranged on the driving substrate and are electrically connected to the driving substrate;
wherein the micro light emitting diode includes:
the LED chip comprises a light-emitting chip body, a light-emitting layer and a light-emitting diode, wherein the light-emitting chip body comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially arranged; and
the light conversion structure is arranged on the light emitting side of the light emitting chip body, is positioned on one side of the second semiconductor layer, which is far away from the light emitting layer, and is used for converting light emitted by the light emitting chip body into white light;
the light conversion structure comprises a buffer layer and a light conversion unit, wherein at least one groove is formed in one side, far away from the second semiconductor layer, of the buffer layer, the light conversion unit is contained in the groove, and the light conversion unit and the second semiconductor layer are arranged at intervals.
8. The display panel according to claim 7, wherein the number of the grooves is plural, and each of the grooves accommodates the light conversion unit therein.
9. The display panel according to claim 8, wherein a distance between adjacent grooves increases in a direction from both sides of the buffer layer to a center of the buffer layer.
10. The display panel of claim 7, further comprising a light shielding unit disposed between adjacent micro light emitting diodes.
CN202011230104.3A 2020-11-06 2020-11-06 Micro light-emitting diode and display panel Active CN112420901B (en)

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