CN107195653A - Display device - Google Patents
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- CN107195653A CN107195653A CN201610143966.XA CN201610143966A CN107195653A CN 107195653 A CN107195653 A CN 107195653A CN 201610143966 A CN201610143966 A CN 201610143966A CN 107195653 A CN107195653 A CN 107195653A
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- light
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- emitting diode
- diode chip
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention discloses a kind of display device.Display device includes a first substrate, a display unit, a second substrate and a light-shielding structure.Display unit is arranged on first substrate, and display unit includes a light-emitting diode chip for backlight unit.Light-shielding structure around display unit light-emitting diode chip for backlight unit, and positioned between first substrate and second substrate.
Description
Technical field
The present invention relates to a kind of display device, and more particularly to a kind of display list with light emitting diode
The display device of member.
Background technology
Because people pursue the high brightness and high color of human viewable's picture, and color monitor skill is dominated
The exploitation and application of art.In daily life, the application of display is also seen everywhere, such as advertisement plate,
TV, Vehicular navigation ... etc..However, from early stage cathode-ray tube (CRT) screen, plasma screen,
Liquid crystal screen is to Organic Light Emitting Diode (OLED) screen, and the exploitation of all types of display screens all runs into
Some similar problems.
For example, the loss of electric energy would generally be improved and rapid rising with the resolution ratio of display screen,
The increase of resolution ratio would generally be produced with the situation of colour mixture, and application of the flexible base plate in display screen
The limit of manufacture craft is still limited by, is difficult to make and volume production.Therefore, how to provide a kind of with good
One of display quality and the display panel with manufacture craft competitiveness, the problem made great efforts for related dealer.
The content of the invention
It is an object of the invention to provide a kind of display device.In the display device of embodiment, light-shielding structure
Around display unit, therefore the light limit that the light-emitting diode chip for backlight unit in a display unit can be sent
System can reduce the generation of the light between adjacent display unit in the circular scope of light-shielding structure
The situation of mixed light..
For up to above-mentioned purpose, the present invention proposes a kind of display device.Display device include a first substrate,
One display unit, a second substrate and a light-shielding structure.Display unit is arranged on first substrate, and
Display unit includes a light-emitting diode chip for backlight unit.Light-emitting diodes tube core of the light-shielding structure around display unit
Piece, and positioned between first substrate and second substrate.
More preferably understand in order to which the above-mentioned and other aspect to the present invention has, preferred embodiment cited below particularly,
And coordinate appended accompanying drawing, it is described in detail below：
Brief description of the drawings
Figure 1A illustrates the top view of display device according to an embodiment of the invention.
Figure 1B illustrates the sectional view along Figure 1A hatching 1B-1B '.
Fig. 2A illustrates the top view of display device according to another embodiment of the present invention.
Fig. 2 B illustrate the top view of the display device according to further embodiment of this invention.
Fig. 3 A~Fig. 3 C illustrate hatching of the display device according to some embodiments of the invention along Fig. 2A
2-2 ' sectional view.
Fig. 4 A~Fig. 4 B illustrate the top view of engagement pad according to some embodiments of the invention.
Fig. 5 illustrates the sectional view of display device according to another embodiment of the present invention.
Fig. 6 illustrates the office of second substrate according to an embodiment of the invention, glue-line and light-emitting diode chip for backlight unit
Portion's sectional view.
Fig. 7 illustrates the partial sectional view of glue-line according to an embodiment of the invention and light-emitting diode chip for backlight unit.
Fig. 8 illustrates the broken section of glue-line according to another embodiment of the present invention and light-emitting diode chip for backlight unit
Figure.
Fig. 9 illustrates the partial sectional view of light-emitting diode chip for backlight unit according to an embodiment of the invention.
Figure 10 A~Figure 10 B, Figure 11 A~Figure 11 B, Figure 12 A~Figure 12 B, Figure 13 A~Figure 13 B, figure
14A~Figure 14 B and Figure 15 A~Figure 15 B illustrate display device and assembling according to some embodiments of the invention
Schematic diagram.
Symbol description
10th, 20,20A~20C, 30,40,50A~50F：Display device
100：First substrate
200：Display unit
210、210R、210G、210B：Light-emitting diode chip for backlight unit
210a：Long side
210b：Short side
210c：Bottom
211：P-type layer
213：Luminescent layer
215：N-type layer
216：Diffusing structure
217：Engagement pad
218：First material layer
219：Second material layer
300：Second substrate
300a、300b：Surface
310：Micro-structural
400：Light-shielding structure
500：Chromatic filter layer
500R、500G、500B：Color region
600：Fluorescence coating
610：Light shield layer
700：Pattern flatness layer
700c：Groove
800：Thin-film transistor element
810：Semiconductor layer
820：Grid
830：Drain/source
840：Gate insulator
850：Protective layer
900：Glue-line
910：First electrode layer
920：The second electrode lay
930：Particulate
940：Fluorophor particle
950：Quantum dot
1B-1B’、2-2’：Hatching
H、H1：Highly
L、L’、L”：Light
S1：First side
S2：Second side
W、W1、W2：Width
α：Drift angle
β：First base angle
γ：Second base angle
Embodiment
In embodiments in accordance with the present invention, display device, light-shielding structure, therefore can be with around display unit
The light that light-emitting diode chip for backlight unit in one display unit is sent is limited in the circular model of light-shielding structure
In enclosing, thus the situation that mixed light occurs for the light between adjacent display unit can be reduced.Referring to
Appended accompanying drawing describes embodiments of the invention in detail.Identical label is same or like to indicate in accompanying drawing
Part.It is noted that accompanying drawing simplifies the content for clearly illustrating embodiment with profit, embodiment is carried
The thin portion structure gone out is used by way of example only, and not the scope of the invention to be protected is limited.Have
Usual skill is modified or changed to those structures the need for it can implement aspect according to reality.
Figure 1A illustrates the top view of display device according to an embodiment of the invention, and Figure 1B is illustrated along figure
1A hatching 1B-1B ' sectional view.As shown in Figure 1A~Figure 1B, display device 10 includes one the
One substrate 100, a display unit 200, a second substrate 300 and a light-shielding structure 400.Display is single
Member 200 is arranged on first substrate 100, and display unit 200 includes a light-emitting diode chip for backlight unit 210.
Light-shielding structure 400 is located at the base of first substrate 100 and second around display unit 200, light-shielding structure 400
Between plate 300, and the contact first substrate 100 of light-shielding structure 400 and second substrate 300.
In embodiment, light-shielding structure 400 be, for example, with light absorbent or can the material of reflected light be made,
Therefore light is difficult to through light-shielding structure 400.In embodiment, light-shielding structure 400 is around display unit 200
And first substrate 100 and second substrate 300 are abutted, therefore can be by the hair in a display unit 200
The light that luminous diode chip 210 is sent is limited in the circular scope of light-shielding structure 400, thus can be with
The situation of mixed light occurs for the light between the adjacent display unit 200 of reduction.The height of light-shielding structure 400
H can be between 3~30 microns (μm), it is preferred that between 5~25 microns (μm), light-shielding structure 400
Top be at least above the top of light-emitting diode chip for backlight unit 210, in other words, light-emitting diode chip for backlight unit 210
Top does not contact second substrate 300, and has a spacing with second substrate 300.Light-shielding structure 400 can
By the wall that extends towards first direction with interlock towards another wall that second direction extends constitute it is netted
Pattern, forms many mesh openings, and first direction and second direction can be X-axis and Y-axis.Hide
Photo structure 400 is preferably greater than neighbouring second substrate adjacent to the bottom width (area) of first substrate 100
300 top surface width (area), but be not limited, or the bottom surface of neighbouring first substrate 100 is wide
Spend the top surface width (area) that (area) is less than or equal to neighbouring second substrate 300, light-shielding structure 400
Side can be plane or curved-surface shape.
As shown in Figure 1B, in the present embodiment, a display unit 200 includes a light-emitting diodes tube core
Piece 210.As shown in Figure 1A~Figure 1B, the circular light-emitting diode chip for backlight unit 210 of light-shielding structure 400, and in
Vertical first substrate 100 or the observation of the direction of second substrate 300, light-shielding structure 400, which encloses, to be set area and is more than
The occupied area of light-emitting diode chip for backlight unit 210, light-emitting diode chip for backlight unit 210 is located at light-shielding structure 400
Among single mesh openings.In other embodiment, a display unit 200 may include multiple luminous two
Pole pipe chip 210, those light-emitting diode chip for backlight unit 210 can provide phase light of same color or different color light, example
If those light-emitting diode chip for backlight unit 210 can be all white light-emitting diode chip, or those luminous two
Pole pipe chip 210 can be red light emitting diodes chip, blue led chips and green emitting
The set of diode chip for backlight unit, and observed in vertical first substrate 100 or the direction of second substrate 300, shading
Structure 400, which is enclosed, sets area more than those occupied area sums of light-emitting diode chip for backlight unit 210, and those are sent out
Luminous diode chip 210 is located among the single mesh openings of light-shielding structure 400.
In embodiment, as shown in Figure 1B, specifically, light-emitting diode chip for backlight unit 210 includes one and lighted
Layer 213, light-shielding structure 400 is around luminescent layer 213.In other embodiment, light-emitting diode chip for backlight unit
210 can include the composite construction of multiple luminescent layers 213.
In embodiment, light-shielding structure 400 abuts the second substrate 300 towards light-emitting area and single around display
Member 200, therefore the light of a display unit 200 can be limited in the circular model of light-shielding structure 400
In enclosing, and from top (second substrate 300) light extraction of display unit 200, thus it can reduce adjacent
The situation of mixed light occurs for the light between display unit 200.For example, a display unit 200 can
Including a light-emitting diode chip for backlight unit 210, this display unit 200 is, for example, a sub-pixel, shading knot
Structure 400 causes the light of adjacent sub-pixel not interfere with each other.
In embodiment, as shown in Figure 1B, display unit 200 is carried and positioned at the dorsal part of display unit 200
First substrate 100, its material can be the glass of printing opacity, sapphire (sapphire), plastic cement or its
His light transmissive material or it is difficult to transparent glass fiber (glass fiber) or lighttight metal foil
(metal foil) and silicon (Si) etc..Because second substrate 300 is located at the light emission side of display unit 200,
Therefore material need to select light-transmitting materials, such as glass, sapphire (sapphire), plastic cement or other printing opacity materials
Material.Light-shielding structure 400 can for example have a height H, and height H is, for example, 3~30 microns (μm), very
To the netted enclosure wall pattern of 5~25 microns (μm), its material can be added with atrament (such as carbon)
Organic material or inorganic material, or surface is coated with the organic material block or inorganic material of reflective metals
Block, its bottom width can be more than, less than or equal to top width.In embodiment, a light-emitting diodes
The characteristic size (long or wide maximum) of die 210 is, for example, 1~100 micron (μm).In other words,
In embodiments of the invention, display unit 200 is using micron order light-emitting diode chip for backlight unit (micro LED
Chip, μ LED).
In embodiment, as shown in Figure 1B, display unit 200 can further include multiple engagement pads 217 (as schemed
Two engagement pads 217 shown in 1B are, for example, one first engagement pad and one second engagement pad), first substrate
100 may include a thin-film transistor element (not being illustrated in Figure 1A~Figure 1B) and a signal electrode (for example
Common electrode), anode and the negative electrode of the light-emitting diode chip for backlight unit 210 completed can connect via those respectively
Touch pad 217 is electrically connected to the thin-film transistor element and signal electrode (such as common-battery of first substrate 100
Pole), for example, light-emitting diode chip for backlight unit 210 can be electrically connected to film crystal via the first engagement pad
Tube elements, and it is electrically connected to signal electrode via the second engagement pad.
In embodiment, first substrate 100 is, for example, thin film transistor base plate, and second substrate 300 is, for example,
Protective glass (cover glass), all can additionally have touch-control sensing structure and the layout of circuit.
Embodiments in accordance with the present invention, light-emitting diode chip for backlight unit 210 can be by corresponding thin film transistor (TFT) member
Part active drive, its brightness of independent modulation, by the use of light-emitting diode chip for backlight unit 210 as luminous pixel/
Sub-pixel unit, and active color monitor can be formed.Also, with inorganic material be made it is micro-
Meter level light-emitting diode chip for backlight unit 210 have the advantages that can for a long time and low current operation, can not lifted
In the case of display device power consumption, the colorfulness and resolution ratio of display device are lifted, and reduces mixed color phenomenon
Generation.In addition, because the size of micron order light-emitting diode chip for backlight unit 210 is very small, therefore can be straight
It is bonded on rigid substrate or flexible base plate, with higher application.
Fig. 2A illustrates the top view of display device according to another embodiment of the present invention, and Fig. 2 B illustrate root
According to the top view of the display device of further embodiment of this invention.In the present embodiment it is identical with previous embodiment or
Similar element continues to use same or like element numbers, and the related description of same or similar element please join
State, will not be repeated here before examination.
As shown in Fig. 2A~Fig. 2 B, display unit 200 may include multiple light-emitting diode chip for backlight unit, shading
This little light-emitting diode chip for backlight unit of structure 400 around display unit 200.In embodiment, such as Fig. 2A institutes
In the display device 20 shown, a display unit 200 may include 3 light-emitting diode chip for backlight unit, and such as
In display device 30 shown in Fig. 2 B, a display unit 200 may include 4 light-emitting diode chip for backlight unit.
For example, a display unit 200 of display device 20 may include a red light-emitting diode core
Piece 210R, a green light LED chip 210G and a blue LED chip 210B,
Light-shielding structure 400 surrounds red light-emitting diode chip 210R, the green light LED chip
210G and blue LED chip 210B, and red light-emitting diode chip 210R, should
Green light LED chip 210G and blue LED chip 210B three are located at shading knot
Among the single mesh openings of structure 400.One display unit 200 of display device 30 may include one
Red light-emitting diode chip 210R, two green light LED chip 210G and a blue light emitting
Diode chip for backlight unit 210B, light-shielding structure 400 is around red light-emitting diode chip 210R, those are green
Light-emitting diode chip 210G and blue LED chip 210B, and the pole of red light-emitting two
Die 210R, those green light LED chip 210G and blue LED chip 210B
Four are located among the single mesh openings of light-shielding structure 400.Consequently, it is possible to display device 20 and 30
A display unit 20 be, for example, one the pixel of different GTGs and color, light-shielding structure 400 can be presented
So that the light of adjacent pixel will not be interfered with each other.
Fig. 3 A~Fig. 3 C illustrate hatching of the display device according to some embodiments of the invention along Fig. 2A
2-2 ' sectional view.Continue to use same or like with the same or analogous element of previous embodiment in the present embodiment
Element numbers, and the related description of same or similar element refer to foregoing, will not be repeated here.Need
It is noted that the anode of light-emitting diode chip for backlight unit in Fig. 3 A~Fig. 3 C and negative electrode via engagement pad (not
It is illustrated in Fig. 3 A~Fig. 3 C) it is electrically connected to the thin-film transistor element of first substrate 100.
As shown in Figure 3A, in display device 20A, a display unit 200 includes three light-emitting diodes
Die 210R, 210G and 210B, and be blocked structure 400 and surround, three light emitting diodes
Chip 210R, 210G and 210B are located among a mesh openings of light-shielding structure 400.Each lights
Its glow color of diode chip for backlight unit 210R, 210G and 210B independent control, therefore a light-emitting diodes
Even if the light that die 210R, 210G or 210B are sent is through adjacent light-emitting diode chip for backlight unit,
Its light color sent will not be also changed, therefore will not be occurred between adjacent display cell 200
Light leak and cause sharpness and contrast reduction or the problem of colour cast (color shift).
As shown in Figure 3 B, in display device 20B, a display unit 200 includes three light-emitting diodes
Die 210, this little light-emitting diode chip for backlight unit 210 are electrically connected to first substrate 100 and are blocked structure
400 surround.Display unit 200 further includes a chromatic filter layer 500 and multiple fluorescence coatings 600.It is color
Color filtering optical layer 500 is arranged on second substrate 300, and chromatic filter layer 500 has multiple color regions
500R, 500G and 500B, are correspondingly arranged on each light-emitting diode chip for backlight unit 210 respectively.This is a little
Fluorescence coating 600, which is separated, to come, and each fluorescence coating 600 is correspondingly arranged in each light-emitting diodes respectively
Between die 210 and each color region 500R, 500G and 500B.
As shown in Figure 3 B, light-emitting diode chip for backlight unit 210 is, for example, blue LED chip, fluorescence
Layer 600 is, for example, yellow fluorescence layer, and the blue light that light-emitting diode chip for backlight unit 210 is sent passes through fluorescence coating 600
After be converted into white light, then through correspond to respectively red, green and blueness color region 500R,
500G and 500B and send feux rouges, green glow and blue light.Also, the area of a color region be more than pair
The area for the fluorescence coating 600 answered, can further reduce the generation of mixed light.
In some embodiments, as shown in Figure 3 B, fluorescence coating 600 can contact color region 500R, 500G
And 500B.In other embodiments, fluorescence coating 600 and color region 500R, 500G, 500B it
Between also can be spaced a distance (not being illustrated in figure).
As shown in Figure 3 B, display device 20B more may include multiple light shield layers 610, by color region 500R,
500G and 500B separate so that the white light for entering a color region is difficult to through another color
Region and reduce mixed light situation, thus can avoid because the sharpness that causes of light leak and contrast reduction or
The problem of colour cast.
As shown in Figure 3 B, light-emitting diode chip for backlight unit 210 can have a circular arc-shaped bottom portion 210c, its tangent plane
Parabola or other camber line forms can be presented.Circular arc-shaped bottom portion 210c design can improve light-emitting diodes
The effect that the light-ray condensing of die 210 is concentrated.
As shown in Figure 3 C, in display device 20C, three light-emitting diode chip for backlight unit 210 are with the portion of bottom
Layering not (such as N-type layer or substrate) is connected with each other.Consequently, it is possible in display device 20C making
In technique, light-emitting diode chip for backlight unit and first substrate 100 are carried out to when group electrically connecting, can be once right
Three light-emitting diode chip for backlight unit of group, thus the manufacture craft time can be shortened.
Fig. 4 A~Fig. 4 B illustrate the top view of engagement pad according to some embodiments of the invention.The present embodiment
In continue to use same or like element numbers, and identical or phase with the same or analogous element of previous embodiment
It refer to foregoing like the related description of element, will not be repeated here.
In embodiment as shown in Figure 4 A, anode and the negative electrode of a light-emitting diode chip for backlight unit 210 are distinguished
It is electrically connected to two engagement pads 217, long side 210a of two engagement pads 217 along light-emitting diode chip for backlight unit 210
Set, and short side 210b of two engagement pads 217 along light-emitting diode chip for backlight unit 210 has width respectively
W1 and width W2, the width W1 of two engagement pads 217 are different with width W2.In embodiment, two
The P-type layer and N-type layer that individual engagement pad 217 is respectively electrically connected to light-emitting diode chip for backlight unit 210 (are not illustrated
In figure), between P-type layer and N-type layer is luminescent layer.
In embodiment as shown in Figure 4 B, a light-emitting diode chip for backlight unit 210 may be electrically connected to three and connect
Touch pad 217, this three engagement pads 217 configure and presented the pattern of a triangle.In embodiment, this three
Individual engagement pad 217 for example may include one first engagement pad, one second engagement pad and one the 3rd engagement pad, hair
Luminous diode chip 210 can be electrically connected to thin-film transistor element via the first engagement pad, and can be via
Two engagement pads are electrically connected to signal electrode, also, light-emitting diode chip for backlight unit can be electrically connected via the 3rd engagement pad
It is connected to thin-film transistor element or signal electrode.
Embodiments in accordance with the present invention, engagement pad 217 is configured in the way of as shown in Fig. 4 A~Fig. 4 B,
It can effectively prevent light-emitting diode chip for backlight unit 210 from being tilted towards two long side 210a directions so that luminous
Diode chip for backlight unit 210 can be positioned to it is more steady, and then can avoid because chip tilt to light type,
Brightness and the harmful effect of color.
Fig. 5 illustrates the sectional view of display device according to another embodiment of the present invention.In the present embodiment with before
State the same or analogous element of embodiment and continue to use same or like element numbers, and same or similar element
Related description refer to foregoing, will not be repeated here.
As shown in figure 5, display device 40 includes first substrate 100, display unit 200, second substrate
300 and light-shielding structure 400.Display unit 200 includes flip-over type light-emitting diode chip for backlight unit 210, luminous two
Pole pipe chip 210 includes a P-type layer 211, a luminescent layer 213 and a N-type layer 215, P-type layer 211
It is arranged on first substrate 100, luminescent layer 213 is arranged in P-type layer 211, N-type layer 215 is set
In on luminescent layer 213.P-type layer 211, luminescent layer 213 and N-type layer 215 are all semi-conducting material,
Such as gallium nitride (GaN) or GaAs (GaAs), P-type layer 211 and N-type layer 215 can provide electricity
Son and hole, as active region luminescent layer 213 have multiple quantum trap (Multi-quantum well,
MQW) structure, electronics is combined and radius with hole in luminescent layer 213.Light-emitting diode chip for backlight unit
210 may also include electrode layer, ohmic contact layer, electronics and hole transmission layer or matching layer etc..
As shown in figure 5, display device 40 more may include a patterning flatness layer 700.Pattern flatness layer
700 are arranged between first substrate 100 and light-shielding structure 400, and patterning flatness layer 700 has one
Groove 700c, at least a portion of the light-emitting diode chip for backlight unit of display unit 200 is located in groove 700c.
In embodiment, as shown in figure 5, patterning flatness layer 700 can be neighbouring or contacts and be connected to shading
Structure 400, and patterning flatness layer 700 is preferably as made by a light screening material, but it is alternatively printing opacity material
Material is made.Consequently, it is possible to which patterning the entirety of flatness layer 700 and light-shielding structure 400 has well
Shaded effect, can effectively prevent display unit 200 from occurring mixed light.In embodiment, flatness layer is patterned
700 be, for example, the organic material layer added with atrament, and light-shielding structure 400 is, for example, to be added with black
The material of organic machine material layer of material, patterning flatness layer 700 and light-shielding structure 400 can with identical or
It is different.In other embodiment, patterning flatness layer 700 is, for example, organic machine material layer of light-permeable.
As shown in figure 5, first substrate 100 includes a thin-film transistor element 800, display device 40
It more may include a first electrode layer 910 and a second electrode lay 920.First electrode layer 910 is arranged at
On a groove 700c first side S1, and the P-type layer 211 adjacent of light-emitting diode chip for backlight unit 210
One substrate 100 is set and by engagement pad 217 (being, for example, a first engagement pad) electrical connection first electrode layer
910, and it is electrically connected to thin-film transistor element 800 via first electrode layer 910.The second electrode lay 920
It is arranged on a groove 700c second side S2, and the second electrode lay 920 passes through another engagement pad
217 (being, for example, the second engagement pad) are electrically connected to the N-type layer 215 of light-emitting diode chip for backlight unit 210,
The adjacent second substrate 300 of N-type layer 215 is set, and the second electrode lay 920 can connect signal electrode (for example
It is common electrode).Luminescent layer 213 is arranged between P-type layer 211 and N-type layer 215.In other implementations
In example, the P-type layer 211 of light-emitting diode chip for backlight unit 210 can also pass through the electricity of the electrical connection of engagement pad 217 first
Pole layer 910, signal electrode (being, for example, common electrode), and luminous two are electrically connected by first electrode layer 910
The N-type layer 215 of pole pipe chip 210 also can be by electrically connecting the second electrode lay 920, by the second electrode lay
920 electrical connection thin-film transistor elements 800.Groove 700c its tangent plane can have parabola, straight line or
Other camber line forms, first side S1 and second side S2 its tangent plane be alternatively parabola, straight line or its
His camber line form, complies with the first electrode layer 910 for being arranged at first side S1 and complies with and be arranged at second
Its tangent plane of side S2 the second electrode lay 920 is alternatively parabola, straight line or other camber line forms.
In embodiment, first electrode layer 910 and the second electrode lay 920 can be respectively anode and negative electrode,
The material of one electrode layer 910 and the second electrode lay 920 for example may include copper, silver, gold, aluminium, tin, titanium,
Conductive materials such as indium, metal oxide or carbon etc., it is possible to which individual layer, alloy or multiple-level stack form its knot
Structure.In embodiment, first electrode layer 910 and the second electrode lay 920 can for example have the effect in reflecting layer,
The light that light-emitting diode chip for backlight unit 210 is sent reflexes to light-emitting area direction, and is effectively increased light extraction efficiency.
As shown in figure 5, display device 40 more may include a glue-line 900.Glue-line 900 is arranged at the second base
Between plate 300 and light-emitting diode chip for backlight unit 210, and a third reflect rate of glue-line 900 is more than or less than
One second substrate refractive index of second substrate 300.The difference of this refractive index so that light can be in second substrate
300 inner sides and the interface of glue-line 900 produce the refraction and reflection of light.
In some embodiments, as shown in figure 5, glue-line 900 can be filled in first substrate 100, the second base
In plate 300, light-shielding structure 400 and the circular space of patterning flatness layer 700, and it is filled in groove
In 700c, and accessible first electrode layer 910, the second electrode lay 920 and engagement pad 217.
In embodiment, first substrate 100 e.g. indium gallium zinc (IGZO), the low temperature shown in Fig. 5 are more
Crystal silicon (LTPS), non-crystalline silicon (a-Si) or other metal oxide semiconductor materials are semiconductor layer
Thin film transistor base plate, thin-film transistor element 800 include semiconductor layer 810, grid 820, drain electrode/
Source electrode 830 and gate insulator 840.More shape between gate insulator 840 and patterning flatness layer 700
Into a protective layer (passivation layer) 850.
Fig. 6 illustrates the office of second substrate according to an embodiment of the invention, glue-line and light-emitting diode chip for backlight unit
Portion's sectional view.In the present embodiment same or like member is continued to use with the same or analogous element of previous embodiment
Part label, and the related description of same or similar element refer to foregoing, will not be repeated here.
As shown in fig. 6, a lower surface 300a of second substrate 300 has a micro-structural 310, micro-structural
310 towards light-emitting diode chip for backlight unit 210.In embodiment, the size of micro-structural 310 is, for example, between secondary
Micron (sub-micro meter) is between micron (micro meter).
In embodiment, second substrate 300 is, for example, protective glass (cover glass) and is located at display device
Outermost, therefore after micron-sized light-emitting diode chip for backlight unit 210 emits beam, light will be via glue-line 900
Enter second substrate 300 with the interface (surface 300a) of the inner side of second substrate 300, then by second substrate
The surface 300b light extractions of 300 opposite side, finally make the micron-sized light-emitting diode chip for backlight unit of human viewable
210 light guide.After light-emitting diode chip for backlight unit 210 emits beam, this light will be in second substrate
300 inner side interface (surface 300a) carries out reflection in a series and refraction, and micro-structural 310 can make
The light that sends of light-emitting diode chip for backlight unit 210 changes its direct of travel at interface (surface 300a), enter
One step allows light in the opposite side light extraction of second substrate 300, with larger rising angle.In other words
Say, micro-structural 310 can make light-emitting diode chip for backlight unit 210 in the beam angle of the light emission side of second substrate 300
Degree is more than the original rising angle of light-emitting diode chip for backlight unit 210.
Still further, the refractive index of glue-line 900 is more than or less than the refractive index of second substrate 300,
The difference of this refractive index causes light to produce light at the inner side interface (surface 300a) of second substrate 300
Refraction and reflection, and because second substrate 300 inner side interface (surface 300a) have micro-structural 310,
Light can be further resulted at the inner side interface (surface 300a) of second substrate 300 and light-emitting diodes tube core
Between the interface of piece 210 and glue-line 900, occur the continuous behavior reflected with being transmitted to both sides, and can
To produce waveguide (waveguide) physical phenomenon.
In embodiment, as shown in fig. 6, micro-structural 310 is, for example, prism structure, micro-structural 310 can be wrapped
Include multiple prisms.In some embodiments, micro-structural 310 may also comprise multiple convex lens (hemisphere convex knot
Structure), multiple concavees lens (hemisphere concave structure) and/or lens pillar (column structure).
In embodiment, as shown in fig. 6, the section of each prism has an apex angle α, one first base angle β
With one second base angle γ, apex angle α is more than the first base angle β and the second base angle γ.In some embodiments, α=90 °.
In some embodiments, each prism bottom width W adjacent with second substrate 300, or by second substrate
The 300 height H1 for measuring each prism along its normal can be approximately less than or equal to 1 micron.In other
In embodiment, each prism bottom width W adjacent with second substrate 300, or by second substrate 300
The height H1 for measuring each prism along its normal can be more than 1 micron.
In embodiment, as shown in fig. 6, the first base angle β is more neighbouring than the second base angle γ (with light-emitting diodes
The distance of the same reference points of pipe unit 210) light emitting diode 210, and the first base angle β is, for example,
More than or equal to the second base angle γ.As shown in fig. 6, light L represents to project light, light L ' represents hair
The first reflection light at the interface of luminous diode chip 210 and glue-line 900 and refraction light, light L " tables
Show second of reflected light and the refraction at the inner side of second substrate 300 and the interface (surface 300a) of glue-line 900
Light, it can be seen that light-emitting diode chip for backlight unit 210 is significantly greater than in the rising angle of the light emission side of second substrate 300
The original rising angle of light-emitting diode chip for backlight unit 210.
In embodiment, referring to Fig. 5~Fig. 6, the shape of light-shielding structure 400 is, for example, annular, and
Light-shielding structure 400 is around light-emitting diode chip for backlight unit 210 so that the scattered light of light-emitting diode chip for backlight unit 210
It can be blocked by the light-shielding structure 400 of annular and be difficult to scatter to another adjacent light-emitting diode chip for backlight unit
210, and cause the colour mixture of human viewable.In embodiment, micro-structural 310 is not formed at the shading of ring-type
The region that structure 400 is covered, to avoid scattered light from being passed via the micro-structural 310 of second substrate 300
It is handed to another adjacent light-emitting diode chip for backlight unit 210.
Fig. 7 illustrates the partial sectional view of glue-line according to an embodiment of the invention and light-emitting diode chip for backlight unit.
Same or like element numbers are continued to use with the same or analogous element of previous embodiment in the present embodiment, and
The related description of same or similar element refer to foregoing, will not be repeated here.
As shown in fig. 7, display unit 200 can also include multiple particulates 930, particulate 930 is mixed
In glue-line 900.In some embodiments, particulate 930 it is a diameter of between 0.4 micron (μm) extremely
Between 0.8 micron (μm).
In embodiment, the refractive index of particulate 930 and the refractive index of glue-line 900 are differed.Some are implemented
In example, the shape of particulate 930 can be spheroid, column, rhombogen or trigone ... etc., particulate
The material of son 930 may include silica, titanium dioxide, billon, silver alloy, plastic cement or resin etc.,
But the present invention is not limited thereto.
In embodiment, as shown in fig. 7, the light L that micron-sized light-emitting diode chip for backlight unit 210 is sent can
The action being scattered via particulate 930, the surrounding of light L toward particulate is scattered so that light
L going direction changing, is transmitted not in small angle range.Therefore, micron-sized light-emitting diodes tube core
The light extraction of piece 210 can be scattered and rising angle can expand.Further, particulate 930 adds
Plus the overall mist degree of glue-line 900 can be caused to be lifted, and ambient light is avoided via the lower section of glue-line 900
Metal level reflective and influence display effect.
Fig. 8 illustrates the broken section of glue-line according to another embodiment of the present invention and light-emitting diode chip for backlight unit
Figure.In the present embodiment same or like element mark is continued to use with the same or analogous element of previous embodiment
Number, and the related description of same or similar element refer to foregoing, will not be repeated here.
As shown in figure 8, light-emitting diode chip for backlight unit 210 includes P-type layer 211, luminescent layer 213 and N-type
Layer 215.The material of P-type layer 211 and N-type layer 215 for example can be gallium nitride (GaN).Such as Fig. 8
Shown, in embodiment, light-emitting diode chip for backlight unit 210 more may include a first material layer 218 and one
Two material layers 219, first material layer 218 is arranged between N-type layer 215 and second substrate 300, and
With first refractive index；Second material layer 219 be arranged at first material layer 218 and second substrate 300 it
Between, and with the second refractive index.N-type layer 215 has a N-type layer refractive index, and N-type layer refractive index is big
In first refractive index, first refractive index is more than the second refractive index.
In embodiment, the refractive index of second material layer 219 is less than the refractive index of first material layer 218, the
The refractive index of one material layer 218 is less than the refractive index of N-type layer 215.In other words, N-type layer 215,
The refractive index of one material layer 218 and second material layer 219 is successively decreased from lower to upper.Still further, glue
Layer 900 is arranged between second substrate 300 and second material layer 219, and the refractive index of glue-line 900 is more than
Or it is more than the refractive index of second substrate 300 less than the refractive index of second material layer 219.
In embodiment, first material layer 218 is, for example, a zinc oxide film (ZnO), second material layer 219
An e.g. indium tin oxide layer (ITO), but be not limited.
For example, N-type layer 215 is, for example, gallium nitride layer (GaN) and has refractive index about 2.38,
First material layer 218 is, for example, zinc oxide film and has refractive index about 1.99, and second material layer 219 is for example
It is indium tin oxide layer and there is refractive index about 1.7, the refractive index of glue-line 900 is, for example, between 1.5 to 1.8
(not including the refractive index 1.7 of second material layer 219), second substrate 300 is, for example, glass and has refraction
Rate about 1.5.
In general, because gallium nitride (N-type layer 215) has high index of refraction, so when light L is by lighting
After the luminescent layer 213 of diode chip for backlight unit 210 is produced, light-emitting diode chip for backlight unit 210 and glue-line will be transmitted to
900 interface, if the refractive index of glue-line 900 is low compared to gallium oxide (N-type layer 215), light L
It is likely to produce total reflection in interface so that light L is less susceptible to send out from light-emitting diode chip for backlight unit 210
Interface is projected, causes micron LED rising angle to diminish.That is, the material of interface both sides
The difference of refractive index is bigger, then the rising angle of light-emitting diode chip for backlight unit 210 can be smaller.According to the present invention
Embodiment, first material layer 218 and second material layer 219 form multiple interfaces, and multiple layers of folding
The rate of penetrating is successively to be successively decreased outward by interior so that the both sides refractive index difference at this little interface diminishes, and reduces complete
The phenomenon of reflection, increases the rising angle of light-emitting diode chip for backlight unit 210, and and then can lift light-emitting diodes
The light extraction efficiency of die 210.
According to some other embodiments, light-emitting diode chip for backlight unit 210 more may include multiple material layers in N-type
Layer 215 on, and this little material layer refractive index successively decrease from N-type layer 215 toward the direction of glue-line 900 and
More than or less than the refractive index of glue-line 900, the rising angle of light-emitting diode chip for backlight unit 210 can also be increased,
And the light extraction efficiency of light-emitting diode chip for backlight unit 210 and then can be lifted.
Fig. 9 illustrates the partial sectional view of light-emitting diode chip for backlight unit according to an embodiment of the invention.This implementation
Continue to use same or like element numbers with the same or analogous element of previous embodiment in example, and it is identical or
The related description of similar components refer to foregoing, will not be repeated here.
As shown in figure 9, the upper surface 210a of light-emitting diode chip for backlight unit 210 can have a diffusing structure 216.
For example, diffusing structure 216 may include the raised structures of multiple nano-scales, e.g. multiple prisms
(as shown in Figure 9) or multiple columnar protrusions structures (not being illustrated in figure).Diffusing structure 216 can be with
Increase the rising angle of light-emitting diode chip for backlight unit 210, and light-emitting diode chip for backlight unit 210 and then can be lifted
Light extraction efficiency.
Figure 10 A~Figure 10 B, Figure 11 A~Figure 11 B, Figure 12 A~Figure 12 B, Figure 13 A~Figure 13 B, figure
14A~Figure 14 B and Figure 15 A~Figure 15 B illustrate display device and assembling according to some embodiments of the invention
Schematic diagram.In embodiment same or like element is continued to use with the same or analogous element of previous embodiment
Label, and the related description of same or similar element refer to foregoing, will not be repeated here.
In following examples, first substrate 100 is, for example, thin film transistor base plate, and second substrate 300
E.g. protective glass, but the present invention is not limited thereto.
In one embodiment, as shown in Figure 10 A, first micro-structural 310 is produced on second substrate 300,
And (be, for example, red light-emitting diode chip, green glow by the light-emitting diode chip for backlight unit 210 with different colours
Light-emitting diode chip for backlight unit and blue LED chip), engagement pad 217, light-shielding structure 400 and mixed
The glue-line 900 for closing particulate 930 is produced on first substrate 100, then by first substrate 100 and the
Two 300 pairs of substrate groups.Consequently, it is possible to not only be easier to coated glue layer 900 and have more what is be easily assembled to
Advantage.Then, as shown in Figure 10 B, the display device that completes 50A.
In one embodiment, as shown in Figure 11 A, first by micro-structural 310, a part of hybrid fine particles 930
Glue-line 900 and a part of light-shielding structure 400 be produced on second substrate 300, and will have different face
The light-emitting diode chip for backlight unit 210 of color (is, for example, red light-emitting diode chip, green light LED chip
And blue LED chip), engagement pad 217, another part light-shielding structure 400 and another part
The glue-line 900 of hybrid fine particles 930 is produced on first substrate 100, then by the He of first substrate 100
300 pairs of groups of second substrate.Consequently, it is possible to which being laid out (layout) space can increase.Then, such as Figure 11 B
It is shown, the display device that completes 50B.
In one embodiment, as illustrated in fig. 12, first by micro-structural 310, a part of hybrid fine particles 930
With the glue-line 900, a part of light-shielding structure 400 and chromatic filter layer 500 of fluorophor particle 940
Color region 500R, 500G and 500B are produced on second substrate 300, and by light-emitting diodes tube core
Piece 210, engagement pad 217, another part light-shielding structure 400 and another part hybrid fine particles 930
Glue-line 900 be produced on first substrate 100, then by 300 pairs of first substrate 100 and second substrate
Group.Consequently, it is possible to which being laid out (layout) space can increase.Then, as shown in Figure 12 B, complete
Display device 50C.
In display device 50C as shown in Figure 12 B, display unit 200 further includes multiple fluorophor grains
Son 940, fluorophor particle 940 is mixed in glue-line 900, and what light-emitting diode chip for backlight unit 210 was sent
Light is converted into a white light through the glue-line 900 of mixing phosphor particle 940.This white light then leads to
Cross the regions of different colours of chromatic filter layer 500 and send the light of different colours.
In embodiment as shown in Figure 12 B, fluorophor particle 940 can also be replaced into quantum dot
(quantum dot), glue-line of the ultraviolet light that light-emitting diode chip for backlight unit 210 is sent through mixing quantum dot
900 and be converted into a visible ray or an infrared light.
In one embodiment, as shown in FIG. 13A, first by micro-structural 310, hybrid fine particles 930 and fluorescence
The glue-line 900 of body particle 940, the color region 500R of light-shielding structure 400 and chromatic filter layer 500,
500G and 500B are produced on second substrate 300, and by light-emitting diode chip for backlight unit 210 and engagement pad
217 are produced on first substrate 100, then by 300 pairs of groups of first substrate 100 and second substrate.Connect
, as shown in Figure 13 B, the display device that completes 50D.
In embodiment as shown in Figure 13 B, fluorophor particle 940 can also be replaced into quantum dot
(quantum dot), glue-line of the ultraviolet light that light-emitting diode chip for backlight unit 210 is sent through mixing quantum dot
900 and be converted into a visible ray or an infrared light.
In one embodiment, as shown in Figure 14 A, first by micro-structural 310, the glue-line of hybrid fine particles 930
900 and light-shielding structure 400 be produced on second substrate 300, and by luminous two with different colours
Pole pipe chip 210 (is, for example, red light-emitting diode chip, green light LED chip and blue light emitting
Diode chip for backlight unit) and engagement pad 217 be produced on first substrate 100, then by first substrate 100
With 300 pairs of groups of second substrate.Then, as shown in Figure 14B, the display device that completes 50E.
In one embodiment, as shown in fig. 15, first by micro-structural 310, a part of hybrid fine particles 930
It is produced on the glue-line 900 and a part of light-shielding structure 400 of quantum dot 950 on second substrate 300,
And by light-emitting diode chip for backlight unit 210, engagement pad 217, another part light-shielding structure 400 and another portion
The glue-line 900 of hybrid fine particles 930 is divided to be produced on first substrate 100, then by first substrate 100
With 300 pairs of groups of second substrate.Consequently, it is possible to not only be easier to coated glue layer 900 and have more be easy to connect
Close light-emitting diode chip for backlight unit 210 and the advantage being easily assembled to.Then, as shown in fig. 15b, made
Into display device 50F.
In display device 50F as shown in fig. 15b, display unit 200 further includes multiple quantum dots 950,
Quantum dot 950 is mixed in glue-line 900, and the ultraviolet light that light-emitting diode chip for backlight unit 210 is sent is passed through
Mix the glue-line 900 of quantum dot 950 and be converted into a visible ray or an infrared light with predetermined wavelength.
For example, when the quantum dot 950 that glue-line 900 is mixed has 2~3 nanometers of size, ultraviolet light
Blue light can be converted into by this glue-line 900；When the quantum dot 950 that glue-line 900 is mixed has 3~4 to receive
The size of rice, ultraviolet light can be converted into green glow by this glue-line 900；The quantum mixed when glue-line 900
Point 950 has 4~5 nanometers of size, and ultraviolet light can be converted into feux rouges by this glue-line 900；Work as glue
The quantum dot 950 of the mixing of layer 900 has 6~8 nanometers of size, and ultraviolet light can quilt by this glue-line 900
It is converted into infrared light.But the size and material of quantum dot, it is non-to be limited by the example above.
In embodiment as shown in fig. 15b, when the light sent is the visible ray of feux rouges, green glow or blue light,
Each display unit 200 can be used as sub-pixel；When the light sent is infrared light, each display unit
200 can be used as infrared optical inductor.
Such as Figure 10 A~Figure 10 B, Figure 11 A~Figure 11 B, Figure 12 A~Figure 12 B, Figure 13 A~Figure 13 B,
In embodiment shown in Figure 14 A~Figure 14 B and Figure 15 A~Figure 15 B, light-emitting diode chip for backlight unit 210
The configuration of type can combination arbitrarily displaced from one another, for example, some light-emitting diode chip for backlight unit can be with
Infrared light emitting diodes chip is replaced into, and fluorophor particle 940 and quantum dot 950 can also arrange in pairs or groups
Different types of light-emitting diode chip for backlight unit 210 and the different display units for being configured at same display device
In 200.
In summary, although disclose the present invention with reference to above preferred embodiment, however itself and be not used to limit
The fixed present invention.Skilled person in the technical field of the invention, do not depart from the spirit of the present invention and
In the range of, it can be used for a variety of modifications and variations.Therefore, the right that protection scope of the present invention should be to enclose
It is required that is defined is defined.
Claims (19)
1. a kind of display device, including：
First substrate；
Display unit, is arranged on the first substrate, and the display unit includes light-emitting diode chip for backlight unit；
Second substrate；And
Light-shielding structure, between the first substrate and the second substrate,
Wherein, the light-emitting diode chip for backlight unit of the light-shielding structure around the display unit.
2. display device as claimed in claim 1, the wherein display unit include multiple light-emitting diodes
Die, those light-emitting diode chip for backlight unit of the light-shielding structure around the display unit.
3. display device as claimed in claim 1, the wherein light-shielding structure have one first height, should
First height is between 3~30 microns.
4. display device as claimed in claim 1, the wherein display unit also include the first engagement pad and
Second engagement pad, the first substrate also includes a thin-film transistor element and a signal electrode, the wherein hair
Luminous diode chip is electrically connected to the thin-film transistor element via first engagement pad, and via this second
Engagement pad is electrically connected to the signal electrode.
5. display device as claimed in claim 4, the wherein display unit also include the 3rd engagement pad,
The light-emitting diode chip for backlight unit is electrically connected to the thin-film transistor element or the signal via the 3rd engagement pad
Electrode.
6. a top of display device as claimed in claim 1, the wherein light-emitting diode chip for backlight unit is with being somebody's turn to do
There is one first spacing between second substrate.
7. display device as claimed in claim 4, the wherein light-emitting diode chip for backlight unit include：
P-type layer, adjacent first substrate is set, and the P-type layer is electrically connected with first engagement pad；
N-type layer, adjacent second substrate is set, and the N-type layer is electrically connected with second engagement pad；And
Luminescent layer, is arranged between the P-type layer and the N-type layer.
8. display device as claimed in claim 7, the wherein light-emitting diode chip for backlight unit also include：
First material layer, is arranged between the N-type layer and the second substrate, and with first refractive index；
And
Second material layer, is arranged between the first material layer and the second substrate, and with the second refraction
Rate,
Wherein, the N-type layer has a N-type layer refractive index, and the N-type layer refractive index is more than first folding
Rate is penetrated, the first refractive index is more than second refractive index.
9. a upper table mask of display device as claimed in claim 1, the wherein light-emitting diode chip for backlight unit
There is a diffusing structure.
10. display device as claimed in claim 2, the wherein display unit also include：
Chromatic filter layer, is arranged on the second substrate, and wherein the chromatic filter layer has multiple chromatic zoneses
Domain, is correspondingly arranged on those light-emitting diode chip for backlight unit respectively；And
Multiple fluorescence coatings, are separated and come, and those fluorescence coatings be correspondingly arranged in respectively those luminous two
Between pole pipe chip and those color regions.
11. display device as claimed in claim 1, in addition to：
Flatness layer is patterned, is arranged between the first substrate and the light-shielding structure, wherein the patterning is put down
Smooth layer has groove, and at least a portion of the light-emitting diode chip for backlight unit of the display unit is located at the groove
In.
12. display device as claimed in claim 11, wherein the patterning flatness layer are contacted and are connected to
The light-shielding structure.
13. display device as claimed in claim 1, the wherein display unit also include：
Glue-line, is arranged between the second substrate and the light-emitting diode chip for backlight unit, wherein the 1 of the glue-line
Three refractive indexes are more than a second substrate refractive index of the second substrate.
14. display device as claimed in claim 13, the wherein display unit also include：
Multiple particulates, are mixed in the glue-line, and wherein those particulates is a diameter of between 0.4 micron
Between (μm)~0.8 micron (μm).
15. display device as claimed in claim 13, the wherein display unit also include：
Multiple fluorophor particles, are mixed in the glue-line, the light that wherein light-emitting diode chip for backlight unit is sent
Line is converted into a white light through the glue-line.
16. display device as claimed in claim 13, the wherein display unit also include：
Multiple quantum dots, are mixed in the glue-line, the ultraviolet light that wherein light-emitting diode chip for backlight unit is sent
Line is converted into a visible ray or an infrared light through the glue-line.
17. a lower surface of display device as claimed in claim 1, the wherein second substrate has micro-
Structure, the micro-structural is towards the light-emitting diode chip for backlight unit.
18. display device as claimed in claim 17, the wherein micro-structural include multiple prisms, respectively should
The section of prism has drift angle, the first base angle and the second base angle, the drift angle be more than first base angle and this
Two base angles.
19. display device as claimed in claim 18, wherein first base angle are more adjacent than second base angle
The nearly light emitting diode, and first base angle is more than or equal to second base angle.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080173886A1 (en) * | 2006-05-11 | 2008-07-24 | Evident Technologies, Inc. | Solid state lighting devices comprising quantum dots |
| US20100078662A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Non-global solder mask led assembly |
| CN103066177A (en) * | 2011-10-19 | 2013-04-24 | 展晶科技(深圳)有限公司 | Light emitting diode crystalline grain |
| US20130126890A1 (en) * | 2011-11-23 | 2013-05-23 | International Business Machines Corporation | Integrating active matrix inorganic light emitting diodes for display devices |
| CN103238225A (en) * | 2010-11-05 | 2013-08-07 | 首尔Opto仪器股份有限公司 | A light emitting diode assembly and method for fabricating the same |
| CN104218183A (en) * | 2013-05-31 | 2014-12-17 | 三星显示有限公司 | Organic white light emitting display apparatu |
| CN105047681A (en) * | 2015-08-24 | 2015-11-11 | 深圳市星火辉煌系统工程有限公司 | Color pixel structure of micro display chip |
-
2016
- 2016-03-14 CN CN201610143966.XA patent/CN107195653A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080173886A1 (en) * | 2006-05-11 | 2008-07-24 | Evident Technologies, Inc. | Solid state lighting devices comprising quantum dots |
| US20100078662A1 (en) * | 2008-09-26 | 2010-04-01 | Wei Shi | Non-global solder mask led assembly |
| CN103238225A (en) * | 2010-11-05 | 2013-08-07 | 首尔Opto仪器股份有限公司 | A light emitting diode assembly and method for fabricating the same |
| CN103066177A (en) * | 2011-10-19 | 2013-04-24 | 展晶科技(深圳)有限公司 | Light emitting diode crystalline grain |
| US20130126890A1 (en) * | 2011-11-23 | 2013-05-23 | International Business Machines Corporation | Integrating active matrix inorganic light emitting diodes for display devices |
| CN104218183A (en) * | 2013-05-31 | 2014-12-17 | 三星显示有限公司 | Organic white light emitting display apparatu |
| CN105047681A (en) * | 2015-08-24 | 2015-11-11 | 深圳市星火辉煌系统工程有限公司 | Color pixel structure of micro display chip |
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| CN108878621A (en) * | 2018-06-21 | 2018-11-23 | 深圳创维－Rgb电子有限公司 | A kind of LED encapsulation structure, backlight module and display equipment |
| US11063086B2 (en) | 2018-06-21 | 2021-07-13 | Innolux Corporation | Semiconductor devices and methods for manufacturing the same |
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| CN110738937A (en) * | 2018-07-20 | 2020-01-31 | 英属开曼群岛商镎创科技股份有限公司 | Display panel |
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| US11824141B2 (en) * | 2018-10-05 | 2023-11-21 | Seoul Viosys Co., Ltd. | Light emitting device |
| US20220285587A1 (en) * | 2018-10-05 | 2022-09-08 | Seoul Viosys Co., Ltd. | Light emitting device |
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| CN110783438A (en) * | 2019-05-22 | 2020-02-11 | 友达光电股份有限公司 | Display device and manufacturing method thereof |
| WO2020259037A1 (en) * | 2019-06-28 | 2020-12-30 | 佛山市国星光电股份有限公司 | Full-color light emitting device and display module |
| CN112786763B (en) * | 2019-11-01 | 2023-06-20 | 成都辰显光电有限公司 | Display panel and display device |
| CN112786763A (en) * | 2019-11-01 | 2021-05-11 | 成都辰显光电有限公司 | Display panel and display device |
| CN113782661A (en) * | 2020-06-10 | 2021-12-10 | 重庆康佳光电技术研究院有限公司 | Display backboard |
| CN114078399A (en) * | 2020-08-14 | 2022-02-22 | 华为技术有限公司 | Display panel, enhanced polarizer module and display device |
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Application publication date: 20170922 |