CN115050873A - RGB Micro-LED chip and manufacturing method thereof - Google Patents
RGB Micro-LED chip and manufacturing method thereof Download PDFInfo
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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Abstract
The invention provides an RGB Micro-LED chip and a manufacturing method thereof, wherein the RGB Micro-LED chip comprises: a plurality of pixel cells, each pixel cell comprising: a conductive substrate; the RGB stacking structure is stacked on the surface of the conductive substrate and comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and the red light table top, the green light table top and the blue light table top are exposed; and the wavelength of each light-emitting structure is gradually decreased along the light-emitting direction, and the arrangement of the metal reflector is combined, so that each emergent light is emitted along the light-emitting direction, the emergent light of the short-wavelength light-emitting structure is prevented from being absorbed by the long-wavelength light-emitting structure, and the light-emitting efficiency of the RGB Micro-LED chip is improved.
Description
Technical Field
The invention relates to the technical field of light emitting diodes, in particular to an RGB Micro-LED chip and a manufacturing method thereof.
Background
With the innovation and development of the LED technology, the RGB Micro-LED display technology becomes a new generation of display technology, the traditional LED structure is miniaturized and matrixed, the size of a single LED chip is reduced to dozens of micrometers or even several micrometers, and addressing and individual driving luminescence of each LED pixel point are realized. Because the Micro-display of the RGB Micro-LED chip has the advantages of high resolution, high brightness, long service life, wide working temperature range, strong anti-interference capability, high response speed, low power consumption and the like, the RGB Micro-LED chip has important application value in the fields of high resolution display, helmet display, augmented reality, high-speed visible light communication, Micro-projectors, optogenetics, wearable electronics and the like.
The full color gamut LED display screen is formed by assembling red, green and blue three primary colors (RGB) RGB Micro-LED chips on a substrate according to a certain arrangement mode, and as the RGB Micro-LED chips are small in size, a large number of RGB Micro-LEDs need to be transferred for manufacturing the full color gamut RGB Micro-LED display screen, the technical process is too complex, the transfer difficulty is large, the yield of mass production is low, the production cost is too high, the consistency is poor, and the like. The final size and resolution of the full-color-gamut LED display screen are limited by the size and the distance of the RGB Micro-LED chips of each group, generally, in the traditional RGB, each group adopts three chips of red, green and blue which are uniformly distributed at intervals on the horizontal plane to form the RGB effect, not only is the single group size ratio larger, but also the single chip interval of each group of adjacent RGB Micro-LED chips is smaller, the color mixing influence is easy to generate, the resolution is low, and therefore, the high resolution and mass transfer process of the display screen is difficult to realize.
Disclosure of Invention
In view of the above, the invention provides an RGB Micro-LED chip and a method for manufacturing the same, so as to solve the problem in the prior art that the single chip interval and each group of RGB distance of the RGB Micro-LED chip in the full color domain are small, which may cause color mixing influence and result in low resolution; and the manufacturing process is too complex, which causes the problems of large mass transfer difficulty, low yield rate of mass production, too high production cost, poor consistency and the like.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an RGB Micro-LED chip, comprising:
a plurality of pixel cells, each of the pixel cells comprising:
a conductive substrate;
the RGB structure comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and a red light mesa, a green light mesa and a blue light mesa are exposed, and the red light emitting structure sequentially comprises a first metal reflector, a red light P-type semiconductor layer, a red light active region and a red light N-type semiconductor layer which are stacked along the first direction; the green light emitting structure sequentially comprises a second metal reflector, a green light P-type semiconductor layer, a green light active region and a green light N-type semiconductor layer which are stacked along the first direction; the blue light emitting structure sequentially comprises a third metal reflector, a blue light P-type semiconductor layer, a blue light active region and a blue light N-type semiconductor layer which are stacked along the first direction, and the first direction is perpendicular to the conductive substrate and is directed to the blue light emitting structure by the conductive substrate;
the red light emitting structure, the green light emitting structure and the blue light emitting structure are connected in series in pairs through metal reflectors;
the first electrode is arranged on one side surface of the conductive substrate, which is far away from the RGB stacked structure;
a second electrode stacked on the blue mesa;
the third electrode is connected with the green light emitting structure and the blue light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
a fourth electrode connected to the red light emitting structure and the green light emitting structure and spaced apart from sidewalls of the red light emitting structure and the green light emitting structure;
and the insulating protection layer covers the RGB stacking structure and the exposed surface of the conductive substrate and exposes the second electrode, the third electrode and the fourth electrode.
Optionally, the third electrode is stacked on the green mesa, and the fourth electrode is stacked on the red mesa.
Optionally, the blue light mesa is provided with a groove extending toward the third metal reflector, and a part of the third metal reflector is exposed to form a third metal reflector mesa; the third metal reflector mesa is provided with a groove extending towards the second metal reflector, and part of the second metal reflector is exposed to form a second metal reflector mesa; the third electrode covers the third metal mirror mesa, and the fourth electrode covers the second metal mirror mesa.
Optionally, the first electrode is a P-type electrode, the second electrode is an N-type electrode, and the third electrode and the fourth electrode may be P-type electrodes or N-type electrodes.
Optionally, the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
Optionally, the insulating protective layer includes transparent insulating layer and DBR insulating layer, transparent insulating layer covers ruddiness mesa green glow mesa with the exposed surface of blue light mesa, the DBR insulating layer covers RGB stacked structure with conducting substrate's lateral wall.
The invention also provides a manufacturing method of the RGB Micro-LED chip, which is characterized by comprising the following steps of:
step S1, epitaxially forming a red light stack structure on the first temporary substrate, epitaxially forming a green light stack structure on the second temporary substrate, and epitaxially forming a blue light stack structure on the third temporary substrate;
step S2, providing a conductive substrate;
step S3, manufacturing a first electrode on one side surface of the conductive substrate;
step S4, forming an RGB stacking structure on the surface of one side of the conductive substrate, which is far away from the first electrode, wherein the RGB stacking structure comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and a red light mesa, a green light mesa and a blue light mesa are exposed; the red light emitting structure sequentially comprises a first metal reflector, a red light P-type semiconductor layer, a red light active region and a red light N-type semiconductor layer which are stacked along the first direction; the green light emitting structure sequentially comprises a second metal reflector, a green light P-type semiconductor layer, a green light active region and a green light N-type semiconductor layer which are stacked along the first direction; the blue light emitting structure sequentially comprises a third metal reflector, a blue light P-type semiconductor layer, a blue light active region and a blue light N-type semiconductor layer which are stacked along the first direction, and the first direction is perpendicular to the conductive substrate and is directed to the blue light emitting structure by the conductive substrate;
the red light emitting structure, the green light emitting structure and the blue light emitting structure are connected in series in pairs through metal reflectors;
the step S4 specifically includes the following steps:
s4.1, bonding the red light stacking structure on the conductive substrate through the first metal reflector;
s4.2, stripping the first temporary substrate;
s4.3, adhering the first electrode to a first temporary carrier plate through an adhesive;
step S4.4, etching along the surface of the red light N-type semiconductor layer to expose the first temporary carrier plate, forming a first cutting channel, and separating the red light stacking structure into a plurality of independent red light emitting structures;
s4.5, separating the green light stack structure into a plurality of independent green light emitting structures in an etching and film expanding mode, wherein the distance between the green light emitting structures reaches a first preset length;
s4.6, separating the blue light stacking structure into a plurality of independent blue light emitting structures in an etching and film expanding mode, wherein the distance between the blue light emitting structures reaches a second preset length;
step S4.7, bonding each green light-emitting structure on each red light-emitting structure in an aligned mode through the second metal reflector and the red light N-type semiconductor layer to expose the red light table top, and stripping the second temporary substrate;
s4.8, bonding each blue light emitting structure on each green light emitting structure in an aligned mode through the third metal reflector and the green light N-type semiconductor layer to expose a green light table top, and stripping the third temporary substrate to expose the blue light table top;
step S5, manufacturing a second electrode, a third electrode and a fourth electrode;
a second electrode stacked on the blue mesa;
the third electrode is connected with the green light emitting structure and the blue light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
the fourth electrode is connected with the red light emitting structure and the green light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
step S6, depositing an insulating protection layer, where the insulating protection layer covers the RGB stack structure and the exposed surface of the conductive substrate, and exposes the second electrode, the third electrode, and the fourth electrode by photolithography and etching;
step S7, removing the first temporary carrier to form a plurality of pixel units.
Optionally, step S4.5 specifically includes the following steps:
s4.5a, adhering the second temporary substrate to the first adhesive film;
s4.5b, etching along the surface of the second metal reflector to expose the first adhesive film to form a second cutting channel, and separating the second cutting channel into a plurality of independent green light emitting structures;
s4.5c, expanding the first adhesion film through a film expanding machine, and increasing the length of the second cutting channel to enable the distance between the green light emitting structures to reach a first preset length;
s4.5d, fixing the green light emitting structures to form rigid connection, and avoiding that the alignment bonding cannot be completed in the subsequent process due to the fact that the first adhesion film is too soft:
filling a first adhesive in the second cutting channel to connect and fix the green light stacking units;
or
And adhering the first adhesive film on a second temporary carrier plate to fix each green light stacking unit.
Optionally, step S4.6 specifically includes the following steps:
s4.6a, adhering the third temporary substrate to a second adhesive film;
s4.6b, etching along the surface of the third metal reflector to expose the second adhesive film, forming a third cutting channel and separating the third cutting channel into a plurality of independent blue light emitting structures;
s4.6c, expanding the second adhesion film through a film expanding machine, and increasing the length of the third cutting channel to enable the distance between the blue light pile light-emitting structures to reach a second preset length;
s4.6d, fixing the blue light emitting structures to form rigid connection, and avoiding the problem that the second adhesion film is too soft to complete para-bonding in the subsequent process:
filling a second adhesive in the third cutting path for connecting and fixing each blue light stacking unit; or
And adhering the second adhesive film to a third temporary carrier plate to fix each blue light stacking unit.
Optionally, the third electrode is stacked on the green mesa, and the fourth electrode is stacked on the red mesa.
Optionally, one side wall of each of the red light emitting structure, the green light emitting structure and the blue light emitting structure is bonded on the same vertical line;
further comprising, after the step S4 and before the step S5, a step Q1:
etching the blue light mesa on the side along the vertical line to expose part of the third metal reflector to form a third metal reflector mesa; etching along the third metal reflector mesa to expose part of the second metal reflector to form a second metal reflector mesa;
the step S5 specifically includes a step Q2:
a second electrode stacked on the blue mesa;
the third electrode covers the third metal reflector table top and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
and the fourth electrode covers the second metal reflector table-board and is arranged at a distance from the side walls of the red light emitting structure and the green light emitting structure.
Optionally, the first electrode is a P-type electrode, the second electrode is an N-type electrode, and the third electrode and the fourth electrode may be P-type electrodes or N-type electrodes.
Optionally, the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
Optionally, the insulating protective layer includes transparent insulating layer and DBR insulating layer, transparent insulating layer covers ruddiness mesa green glow mesa with the exposed surface of blue light mesa, the DBR insulating layer covers RGB stacked structure with conducting substrate's lateral wall.
Through the technical scheme, the following effects are achieved:
1. according to the RGB Micro-LED chip provided by the invention, by arranging the RGB stacking structures, the RGB stacking structures comprise the red light emitting structures, the green light emitting structures and the blue light emitting structures which are sequentially stacked along the first direction and distributed in a step-shaped manner, and the red light table top, the green light table top and the blue light table top are exposed, so that the size of each group of RGB Micro-LED chips can be reduced and the display resolution is improved by adopting a vertical stacking manner; and the wavelength of each light-emitting structure is gradually decreased along the light-emitting direction, and the arrangement of the metal reflector is combined, so that each emergent light is emitted along the light-emitting direction, the emergent light of the short-wavelength light-emitting structure is prevented from being absorbed by the long-wavelength light-emitting structure, and the light-emitting efficiency of the RGB Micro-LED chip is improved.
2. Furthermore, the third electrode is arranged to cover the table top of the third metal reflector, and the fourth electrode covers the table top of the second metal reflector, so that the conductive efficiency of the third electrode and the fourth electrode can be further improved, and the luminous efficiency of the RGB Micro-LED chip can be further improved.
3. Further, the first electrode is a P-type electrode, the second electrode is an N-type electrode, the third electrode and the fourth electrode can be P-type electrodes or N-type electrodes, and the monochromatic control of the three primary colors of red, green and blue and the color mixing control thereof can be realized by controlling the first electrode, the second electrode, the third electrode and the fourth electrode according to actual needs.
4. Furthermore, the transparent insulating layer covers the exposed surfaces of the red light table board, the green light table board and the blue light table board, the DBR insulating layer covers the side walls of the RGB stacking structure and the conductive substrate, reliability can be achieved, light emitted by the side walls of the light emitting structures can be reflected, red light is emitted and concentrated on the red light table board, green light is emitted and concentrated on the green light table board, and blue light is emitted and concentrated on the blue light table board, so that display resolution is further improved.
5. The method for manufacturing the RGB Micro-LED chip provided in this embodiment is used for manufacturing the RGB Micro-LED chip, and includes forming a red light stacking structure, a green light stacking structure, and a blue light stacking structure on different temporary substrates by epitaxy, separating the red light stacking structure, the green light stacking structure, and the blue light stacking structure into a plurality of independent red light emitting structures, green light emitting structures, and blue light emitting structures, then forming the RGB stacking structure by alignment bonding, forming a plurality of pixel units by combining a conductive substrate, electrodes, and an insulating protective layer, and further combining the RGB Micro-LED chip, and can effectively solve the problems of large transfer difficulty, low yield, high production cost, poor consistency, and the like caused by too complicated manufacturing process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of an RGB Micro-LED chip according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of another RGB Micro-LED chip provided in an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of another RGB Micro-LED chip provided by an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of another RGB Micro-LED chip provided in an embodiment of the present invention;
fig. 5.1 to 19 are cross-sectional views of processes corresponding to steps of a method for manufacturing an RGB Micro-LED chip according to an embodiment of the present invention;
fig. 20 to 24 are cross-sectional views of processes corresponding to steps of another RGB Micro-LED chip manufacturing method according to an embodiment of the present invention.
The symbols in the drawings illustrate that:
1. a pixel unit; 10a, a first temporary substrate; 10b, a second temporary substrate; 10c, a third temporary substrate; 20. a red light stack structure; 30. a green light stack structure; 40. a blue light stack structure; 50a, a first temporary carrier plate; 50b, a second temporary carrier plate; 50c, a third temporary carrier plate; 60a, a first cutting channel; 60b, a second cutting channel; 60c, a third cutting channel; 70a, a first adhesive film; 70b, a second adhesive film; 80a, a first adhesive; 80b, a second adhesive; 100. a conductive substrate; 200. a red light emitting structure; 210. a red N-type semiconductor layer; 220. a red light active region; 230. a red P-type semiconductor layer; 240. a first metal mirror; 300. a green light emitting structure; 310. a green light N-type semiconductor layer; 320. a green light active region; 330. a green P-type semiconductor layer; 340. a second metal mirror; 400. a blue light emitting structure; 410. a blue N-type semiconductor layer; 420. a blue light active region; 430. a blue light P-type semiconductor layer; 440. a third metal mirror; 510. a first electrode; 520. a second electrode; 530. a third electrode; 540. a fourth electrode; 600. an insulating protective layer; 610. a transparent insulating layer; 620. a DBR insulating layer; t1, red mesa; t2, green mesa; t3, blue mesa; s1, the projection area of the red light emitting structure in the vertical direction; s2, the projection area of the green light emitting structure in the vertical direction; and S3, the projection area of the blue light emitting structure in the vertical direction.
Detailed Description
In order to make the content of the present invention clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, and in the detailed description of the embodiments of the present application, the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
An RGB Micro-LED chip provided in an embodiment of the present invention, as shown in fig. 1, includes:
a plurality of pixel cells 1, each pixel cell 1 comprising:
a conductive substrate 100;
the red light emitting structure 200 sequentially comprises a first metal reflector 240, a red light P-type semiconductor layer 230, a red light active region 220 and a red light N-type semiconductor layer 210 which are stacked in the first direction, wherein the red light emitting structure 200, the green light emitting structure 300 and the blue light emitting structure 400 are sequentially stacked in the first direction and distributed in a step shape, and a red light mesa T1, a green light mesa T2 and a blue light mesa T3 are exposed; the green light emitting structure 300 includes a second metal reflector 340, a green P-type semiconductor layer 330, a green active region 320, and a green N-type semiconductor layer 310, which are stacked in order along a first direction; the blue light emitting structure 400 sequentially comprises a third metal reflector 440, a blue P-type semiconductor layer 430, a blue active region 420 and a blue N-type semiconductor layer 410 which are stacked along a first direction, wherein the first direction is perpendicular to the conductive substrate 100 and the conductive substrate 100 points to the blue light emitting structure 400;
the red light emitting structure 200, the green light emitting structure 300 and the blue light emitting structure 400 are connected in series two by two through metal reflectors;
in this embodiment, specific materials of the first metal reflector 240, the second metal reflector 340, and the third metal reflector 440 are not limited, and optionally, in this embodiment, the materials of the first metal reflector 240, the second metal reflector 340, and the third metal reflector 440 include one or more of metal materials such as Ag, Al, Au, and Cu.
In this embodiment, the first metal reflector 240, the second metal reflector 340 and the third metal reflector 440 may be made of the same material or different materials.
A first electrode 510 disposed on a surface of the conductive substrate 100 facing away from the RGB stack structure;
a second electrode 520 stacked on the blue mesa T3;
a third electrode 530 connected to the green and blue light emitting structures 300 and 400 and disposed at a distance from sidewalls of the green and blue light emitting structures 300 and 400;
a fourth electrode 540 connected to the red and green light emitting structures 200 and 300 and spaced apart from sidewalls of the red and green light emitting structures 200 and 300;
alternatively, in the present embodiment, the third electrode 530 is stacked on the green mesa T2, and the fourth electrode 540 is stacked on the red mesa T1.
And an insulating protective layer 600, wherein the insulating protective layer 600 covers the RGB stack structure and the exposed surface of the conductive substrate 100, and exposes the second electrode 520, the third electrode 530 and the fourth electrode 540.
Alternatively, in the present embodiment, the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
Alternatively, in the present embodiment, the red mesa T1 and the green mesa T2 are both annular mesas.
Optionally, in this embodiment, the first electrode 510 is a P-type electrode, the second electrode 520 is an N-type electrode, and the third electrode 530 and the fourth electrode 540 may be P-type electrodes or N-type electrodes. The single color control of the three primary colors of red, green and blue and the color mixture control thereof can be realized by controlling the first electrode, the second electrode, the third electrode and the fourth electrode according to actual needs.
It should be noted that fig. 1 to 4 all show two pixel units 1, and those skilled in the art should understand that the drawings are only schematic, and the pixel units 1 of the present invention are not limited to two.
According to the RGB Micro-LED chip provided by the embodiment, by arranging the RGB stacking structures, the RGB stacking structures comprise the red light emitting structures, the green light emitting structures and the blue light emitting structures which are sequentially stacked along the first direction and distributed in a step-shaped manner, and the red light table top, the green light table top and the blue light table top are exposed, and by adopting a vertical stacking mode, the size of each group of RGB Micro-LED chips can be reduced, and the display resolution is improved; and the wavelength of each light-emitting structure is gradually decreased along the light-emitting direction, and the arrangement of the metal reflector is combined, so that each emergent light is emitted along the light-emitting direction, the emergent light of the short-wavelength light-emitting structure is prevented from being absorbed by the long-wavelength light-emitting structure, and the light-emitting efficiency of the RGB Micro-LED chip is improved.
To improve the conduction efficiency of the third and fourth electrodes, optionally, in an embodiment of the present application, as shown in fig. 2, the blue mesa T3 is provided with a groove extending toward the third metal mirror 440, exposing a portion of the third metal mirror 440 to form a third metal mirror mesa; the third metal reflector mesa is provided with a groove extending towards the second metal reflector 340, and part of the second metal reflector 340 is exposed to form a second metal reflector mesa; the third electrode 530 covers the third metal mirror mesa and the fourth electrode 540 covers the second metal mirror mesa.
To further improve the display resolution, optionally, in an embodiment of the present application, as shown in fig. 3 or fig. 4, the insulating protection layer 600 includes a transparent insulating layer 610 and a DBR insulating layer 620, the transparent insulating layer 610 covers the exposed surfaces of the red mesa T1, the green mesa T2, and the blue mesa T3, and the DBR insulating layer 620 covers the RGB stacked structure and the sidewalls of the conductive substrate 100. The reliability can be realized, and light emitted by the side walls of the light-emitting structures can be reflected, so that red light is emitted and concentrated on the red light table top, green light is emitted and concentrated on the green light table top, and blue light is emitted and concentrated on the blue light table top.
The invention also provides a manufacturing method of the RGB Micro-LED chip, which comprises the following steps:
step S1, as shown in fig. 5.1 to 5.3, of epitaxially forming a red light stack structure 20 on the first temporary substrate 10a, a green light stack structure 30 on the second temporary substrate 10b, and a blue light stack structure 40 on the third temporary substrate 10 c;
the red light stack structure 20 sequentially includes a red light N-type semiconductor layer 210, a red light active region 220, a red light P-type semiconductor layer 230, and a first metal mirror 240 stacked along a growth direction;
the green light stack structure 30 includes a green light N-type semiconductor layer 310, a green light active region 320, a green light P-type semiconductor layer 330, and a second metal mirror 340 stacked in order along a growth direction;
the blue light stack structure 40 sequentially comprises a blue light N-type semiconductor layer 410, a blue light active region 420, a blue light P-type semiconductor layer 430 and a third metal reflector 440 which are stacked along the growth direction;
in this embodiment, specific materials of the first temporary substrate 10a, the second temporary substrate 10b, and the third temporary substrate 10c are not limited, and alternatively, in this embodiment, the first temporary substrate 10a may be a semiconductor substrate such as a GaAs substrate, the second temporary substrate 10b, and the third temporary substrate 10c may be a semiconductor substrate such as a sapphire substrate, a silicon carbide substrate, or a gallium nitride substrate, and specific materials of the temporary substrates may be selected according to requirements.
Optionally, in this embodiment, the first temporary substrate is larger than the second temporary substrate, and the second temporary substrate is larger than the third temporary substrate.
Step S2, providing a conductive substrate 100;
step S3, as shown in fig. 6, a first electrode 510 is formed on one side surface of the conductive substrate 100;
step S4, forming an RGB stack structure on a surface of the conductive substrate 100 facing away from the first electrode 510, where the RGB stack structure includes a red light emitting structure 200, a green light emitting structure 300, and a blue light emitting structure 400 stacked in sequence along a first direction and distributed in a step-like manner, and exposes a red mesa T1, a green mesa T2, and a blue mesa T3; the red light emitting structure 200 sequentially includes a first metal reflector 240, a red P-type semiconductor layer 230, a red active region 220, and a red N-type semiconductor layer 210 stacked in a first direction; the green light emitting structure 300 includes a second metal reflector 340, a green P-type semiconductor layer 330, a green active region 320, and a green N-type semiconductor layer 310, which are stacked in order along a first direction; the blue light emitting structure 400 sequentially comprises a third metal reflector 440, a blue P-type semiconductor layer 430, a blue active region 420 and a blue N-type semiconductor layer 410 which are stacked along a first direction, wherein the first direction is perpendicular to the conductive substrate 100 and the conductive substrate 100 points to the blue light emitting structure 400;
the red light emitting structure 200, the green light emitting structure 300 and the blue light emitting structure 400 are connected in series two by two through metal reflectors;
in this embodiment, specific materials of the first metal reflector 240, the second metal reflector 340, and the third metal reflector 440 are not limited, and optionally, in this embodiment, the materials of the first metal reflector 240, the second metal reflector 340, and the third metal reflector 440 include one or more of metal materials such as Ag, Al, Au, and Cu.
In this embodiment, the first metal reflector 240, the second metal reflector 340 and the third metal reflector 440 may be made of the same material or different materials.
Step S4 specifically includes the following steps:
step S4.1, as shown in fig. 7, bonding the red light stack structure 20 on the conductive substrate 100 through the first metal mirror 240;
step S4.2, as shown in fig. 8, the first temporary substrate 10a is peeled;
step S4.3, as shown in fig. 9, adhering the first electrode 510 to the first temporary carrier board 50a by an adhesive;
step S4.4, as shown in fig. 10, etching along the surface of the red light N-type semiconductor layer 210 to expose the first temporary carrier plate 50a, forming a first cutting channel 60a, and separating the red light stacked structure 20 into a plurality of independent red light emitting structures 200;
s4.5, separating the green light stack structure 30 into a plurality of independent green light emitting structures 300 in an etching and film expanding mode, wherein the distance between the green light emitting structures 300 reaches a first preset length;
step S4.5 specifically includes the following steps:
step s4.5a, as shown in fig. 11.1, adhering the second temporary substrate 10b to the first adhesive film 70 a;
step s4.5b, as shown in fig. 11.2, etching is performed along the surface of the second metal reflector 340 to expose the first adhesive film 70a, so as to form a second scribe line 60b, and the second scribe line is separated into a plurality of independent green light emitting structures 300;
step S4.5c, as shown in FIG. 11.3, the first adhesive film 70a is subjected to film expansion through a film expansion machine, the length of the second cutting channel 60b is increased, and the distance between the green light emitting structures 300 reaches a first preset length;
step S4.5d, fixing the green light emitting structures 300 to form rigid connection, and avoiding that the alignment bonding cannot be completed in the subsequent process due to the first adhesive film 70a being too soft:
as shown in fig. 11.4a, the second scribe line 60b is filled with a first adhesive 80a to connect and fix the green light emitting structures 300;
or
As shown in fig. 11.4b, the first adhesive film 70a is adhered on the second temporary carrier 50b to fix each green light-emitting structure 300;
s4.6, separating the blue light stack structure 40 into a plurality of independent blue light emitting structures 400 in an etching and film expanding mode, wherein the distance between the blue light emitting structures 400 reaches a second preset length;
step S4.6 specifically includes the following steps:
step s4.6a, as shown in fig. 12.1, the third temporary substrate 10c is bonded on the second adhesive film 70 b;
step s4.6b, as shown in fig. 12.2, etching is performed along the surface of the third metal reflector 440 to expose the second adhesive film 70b, so as to form a third scribe line 60c, which is separated into a plurality of independent blue light emitting structures 400;
step S4.6c, as shown in FIG. 12.3, a film expanding machine is used for expanding the second adhesive film 70b, the length of a third cutting channel 60c is increased, and the distance between the light-emitting structures of the blue light stacks reaches a second preset length;
step S4.6d, fixing each blue light emitting structure 400 to form rigid connection, and avoiding that the second adhesive film 70b is too soft to complete alignment bonding in subsequent processes:
as shown in fig. 12.4a, the third scribe line 60c is filled with a second adhesive 80b for connecting and fixing the blue light emitting structures 400;
or
As shown in fig. 12.4b, the second adhesive film 70b is adhered to the third temporary carrier 50c for fixing each blue light emitting structure 400;
in this embodiment, specific materials of the first adhesive film 70a and the second adhesive film 70b are not limited, and alternatively, in this embodiment, the first adhesive film 70a and the second adhesive film 70b are thin film materials with adhesive property, and include one or more of polyimide, a thermosensitive DAF film, and the like.
In this embodiment, specific materials of the first adhesive 80a and the second adhesive 80b are not limited, and alternatively, in this embodiment, the materials of the first adhesive 80a and the second adhesive 80b include one or more of acrylate, epoxy resin, polyurethane, polystyrene, polyacrylate, ethylene-vinyl acetate copolymer, and the like.
In this embodiment, specific materials of the first temporary carrier plate 50a, the second temporary carrier plate 50b and the third temporary carrier plate 50c are not limited, and optionally, in this embodiment, the materials of the first temporary carrier plate 50a, the second temporary carrier plate 50b and the third temporary carrier plate 50c include one of Si substrates, sapphire substrates and the like.
Step S4.7, respectively bond each green light emitting structure 300 on each red light emitting structure 200 in alignment through the second metal reflector 340 and the red N-type semiconductor layer 210, exposing the red mesa T1, and peeling off the second temporary substrate 10 b;
for the structure formed in fig. 11.4a, step S4.7 specifically includes the following steps:
as shown in fig. 13.1, each green light emitting structure 300 is bonded on each red light emitting structure 200 in an aligned manner through the second metal reflector 340 and the red N-type semiconductor layer 210, exposing the red mesa T1;
as shown in fig. 13.2, the first adhesive film 70a and a part of the first adhesive 80a are removed, so that the first adhesive 80a is flush with the green N-type semiconductor layer 310; laser lift-off the second temporary substrate 10 b; the first adhesive film 70a and a part of the first adhesive 80a may be simultaneously removed using an etching solution; alternatively, the first adhesive film 70a may be peeled off, and then a part of the first adhesive 80a may be removed by using an etching solution.
Or
For the structure formed in fig. 11.4b, step S4.7 specifically includes the following steps:
as shown in fig. 14.1, each green light emitting structure 300 is bonded on each red light emitting structure 200 in an aligned manner through the second metal reflector 340 and the red N-type semiconductor layer 210, respectively, to expose the red mesa T1;
as shown in fig. 14.2, the etching solution removes the first adhesive film 70a, and the second temporary carrier 50b is automatically detached; laser lift-off the second temporary substrate 10 b;
step S4.8, respectively bonding each blue light emitting structure 400 on each green light emitting structure 300 in alignment through the third metal reflector 440 and the green N-type semiconductor layer 310, exposing the green mesa T2, and stripping the third temporary substrate 10c, exposing the blue mesa T3;
for the structure formed in fig. 12.4a and 13.2, step S4.8 specifically includes the following steps:
as shown in fig. 15.1, each blue light emitting structure 400 is aligned and bonded to each green light emitting structure 300 through the third metal reflector 440 and the green N-type semiconductor layer 310, respectively, exposing the green mesa T2,
as shown in fig. 15.2, the second adhesive film 70b, the first adhesive 80a and the second adhesive 80b are removed; laser lift-off of the third temporary substrate 10c to expose the blue mesa T3; the second adhesive film 70b, the first adhesive 80a, and the second adhesive 80b may be simultaneously removed using an etching solution; alternatively, the second adhesive film 70b may be peeled off, and the first adhesive 80a and the second adhesive 80b may be removed by using an etching solution.
Or
For the structure formed in fig. 12.4b and 14.2, step S4.8 specifically includes the following steps:
as shown in fig. 16.1, each blue light emitting structure 400 is aligned and bonded to each green light emitting structure 300 through the third metal reflector 440 and the green N-type semiconductor layer 310, respectively, exposing the green mesa T2,
as shown in fig. 16.2, the second adhesive film 70b is etched away, and the third temporary carrier 50c is automatically separated; laser lift-off of the third temporary substrate 10c to expose the blue mesa T3;
it should be noted that the specific position of the alignment bonding is not limited in this embodiment, as long as it is satisfied that the red light emitting structure 200, the green light emitting structure 300, and the blue light emitting structure 400 are stacked in sequence along the first direction and distributed in a step shape, and the red mesa T1, the green mesa T2, and the blue mesa T3 are exposed, and the specific position of the bonding is selected according to actual needs. Alternatively, in the present embodiment, the center lines of the red light emitting structure 200, the green light emitting structure 300, and the blue light emitting structure 400 are bonded on the same vertical line.
Step S5, as shown in fig. 17, fabricating a second electrode 520, a third electrode 530, and a fourth electrode 540;
a second electrode 520 stacked on the blue mesa T3;
a third electrode 530 connected to the green and blue light emitting structures 300 and 400 and disposed at a distance from sidewalls of the green and blue light emitting structures 300 and 400;
a fourth electrode 540 connected to the red and green light emitting structures 200 and 300 and spaced apart from sidewalls of the red and green light emitting structures 200 and 300;
alternatively, in the present embodiment, the third electrode 530 is stacked on the green mesa T2, and the fourth electrode 540 is stacked on the red mesa T1.
Step S6, as shown in fig. 18, depositing an insulating protection layer 600, where the insulating protection layer 600 covers the RGB stack structure and the exposed surface of the conductive substrate 100, and exposes the second electrode 520, the third electrode 530, and the fourth electrode 540 by photolithography and etching;
in step S7, as shown in fig. 19, the first temporary carrier plate 50a is removed to form a plurality of pixel units 1.
Alternatively, in the present embodiment, the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
Alternatively, in the present embodiment, the red mesa T1 and the green mesa T2 are both annular mesas.
Optionally, in this embodiment, the first electrode 510 is a P-type electrode, the second electrode 520 is an N-type electrode, and the third electrode 530 and the fourth electrode 540 may be P-type electrodes or N-type electrodes. The single color control of the three primary colors of red, green and blue and the color mixture control thereof can be realized by controlling the first electrode, the second electrode, the third electrode and the fourth electrode according to actual needs.
The embodiment provides a manufacturing method of RGB Micro-LED chips, and the RGB stacked structure is formed by the manufacturing method, the RGB stacked structure comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and a red light table top, a green light table top and a blue light table top are exposed; and the wavelength of each light-emitting structure is gradually decreased along the light-emitting direction, and the arrangement of the metal reflector is combined, so that each emergent light is emitted along the light-emitting direction, the emergent light of the short-wavelength light-emitting structure is prevented from being absorbed by the long-wavelength light-emitting structure, and the light-emitting efficiency of the RGB Micro-LED chip is improved.
Furthermore, through at the different interim substrate epitaxy formation ruddiness stacked structure, green glow stacked structure and blue light stacked structure, the subdividing becomes a plurality of independent ruddiness light-emitting structure, green glow light-emitting structure and blue light-emitting structure, then form RGB stacked structure through counterpoint bonding, combine conducting substrate, each electrode and insulating protection layer form a plurality of pixel units, and then make up into RGB Micro-LED chip, can effectively solve because of the preparation process is too complicated, lead to the huge volume to shift the degree of difficulty big, the volume production yield is low partially, manufacturing cost is too high, the uniformity subalternation problem.
In order to further improve the display resolution, optionally, in an embodiment of the present application, please refer to fig. 3, the insulating protection layer 600 includes a transparent insulating layer 610 and a DBR insulating layer 620, the transparent insulating layer 610 covers the exposed surfaces of the red mesa T1, the green mesa T2, and the blue mesa T3, and the DBR insulating layer 620 covers the RGB stacked structure and the sidewalls of the conductive substrate 100. The reliability can be realized, and light emitted by the side walls of the light-emitting structures can be reflected, so that red light is emitted and concentrated on the red light table top, green light is emitted and concentrated on the green light table top, and blue light is emitted and concentrated on the blue light table top.
The present invention further provides another method for manufacturing an RGB Micro-LED chip, which is different from the above-mentioned method in that, as shown in fig. 20, the sidewalls of one side of the red light emitting structure 200, one side of the green light emitting structure 300, and one side of the blue light emitting structure 400 are bonded on the same vertical line;
after step S4, before step S5, step Q1 is further included:
as shown in fig. 21, the blue mesa T3 on the side along the vertical line is etched to expose a portion of the third metal mirror 440, forming a third metal mirror mesa; etching along the third metal mirror mesa to expose a portion of the second metal mirror 340 to form a second metal mirror mesa;
step S5 specifically includes step Q2, as shown in fig. 22:
a second electrode 520 stacked on the blue mesa T3;
a third electrode 530 covering the third metal mirror mesa and disposed at a distance from sidewalls of the green light emitting structure 300 and the blue light emitting structure 400;
and a fourth electrode 540 covering the second metal mirror mesa and disposed at a distance from sidewalls of the red and green light emitting structures 200 and 300.
Step S6 specifically includes step Q3, as shown in fig. 23, depositing an insulating protection layer 600, where the insulating protection layer 600 covers the RGB stack structure and the exposed surface of the conductive substrate 100, and exposes the second electrode 520, the third electrode 530, and the fourth electrode 540 by photolithography and etching;
step S7 specifically includes step Q4, as shown in fig. 24, removing the first temporary carrier plate 50a to form a plurality of pixel units 1.
In this embodiment, a third electrode is disposed to cover the mesa of the third metal reflector, and a fourth electrode covers the mesa of the second metal reflector, so that the conductive efficiency of the third electrode and the fourth electrode can be further improved, and the light emitting efficiency of the RGB Micro-LED chip can be further improved.
In order to further improve the display resolution, optionally, in an embodiment of the present application, referring to fig. 4, the insulating protection layer 600 includes a transparent insulating layer 610 and a DBR insulating layer 620, the transparent insulating layer 610 covers the exposed surfaces of the red mesa T1, the green mesa T2, and the blue mesa T3, and the DBR insulating layer 620 covers the RGB stacked structure and the sidewalls of the conductive substrate 100. The reliability can be realized, and light emitted by the side walls of the light-emitting structures can be reflected, so that red light is emitted and concentrated on the red light table top, green light is emitted and concentrated on the green light table top, and blue light is emitted and concentrated on the blue light table top.
It will be understood by those skilled in the art that in the present disclosure, the terms "transverse," "longitudinal," "upper," "lower," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the present invention and simplicity in description, but do not indicate or imply that the referenced devices or components must be in a particular orientation, constructed and operated in a particular orientation, and thus the terms should not be construed as limiting the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (14)
1. An RGB Micro-LED chip, comprising:
a plurality of pixel cells, each of the pixel cells comprising:
a conductive substrate;
the RGB structure comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and a red light mesa, a green light mesa and a blue light mesa are exposed, and the red light emitting structure sequentially comprises a first metal reflector, a red light P-type semiconductor layer, a red light active region and a red light N-type semiconductor layer which are stacked along the first direction; the green light emitting structure sequentially comprises a second metal reflector, a green light P-type semiconductor layer, a green light active region and a green light N-type semiconductor layer which are stacked along the first direction; the blue light emitting structure sequentially comprises a third metal reflector, a blue light P-type semiconductor layer, a blue light active region and a blue light N-type semiconductor layer which are stacked along the first direction, and the first direction is perpendicular to the conductive substrate and is directed to the blue light emitting structure by the conductive substrate;
the red light emitting structure, the green light emitting structure and the blue light emitting structure are connected in series in pairs through metal reflectors;
the first electrode is arranged on one side surface of the conductive substrate, which is far away from the RGB stacked structure;
a second electrode stacked on the blue mesa;
the third electrode is connected with the green light emitting structure and the blue light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
a fourth electrode connected to the red light emitting structure and the green light emitting structure and spaced apart from sidewalls of the red light emitting structure and the green light emitting structure;
and the insulating protection layer covers the RGB stacking structure and the exposed surface of the conductive substrate and exposes the second electrode, the third electrode and the fourth electrode.
2. A Micro-LED chip according to claim 1, characterized in that: the third electrode is stacked on the green mesa, and the fourth electrode is stacked on the red mesa.
3. A Micro-LED chip according to claim 1, characterized in that: the blue light table top is provided with a groove extending towards the third metal reflector, and part of the third metal reflector is exposed to form a third metal reflector table top; the third metal reflector mesa is provided with a groove extending towards the second metal reflector, and part of the second metal reflector is exposed to form a second metal reflector mesa; the third electrode covers the third metal mirror mesa, and the fourth electrode covers the second metal mirror mesa.
4. The RGB Micro-LED chip of claim 1, wherein: the first electrode is a P-type electrode, the second electrode is an N-type electrode, and the third electrode and the fourth electrode may be P-type electrodes or N-type electrodes.
5. The RGB Micro-LED chip of claim 1, wherein: the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
6. The RGB Micro-LED chip of claim 1, wherein: the insulating protective layer includes transparent insulating layer and DBR insulating layer, transparent insulating layer covers the ruddiness mesa the green glow mesa with the exposed surface of blue light mesa, the DBR insulating layer covers RGB stacked structure with conducting substrate's lateral wall.
7. A manufacturing method of an RGB Micro-LED chip is characterized by comprising the following steps:
step S1, epitaxially forming a red light stack structure on the first temporary substrate, epitaxially forming a green light stack structure on the second temporary substrate, and epitaxially forming a blue light stack structure on the third temporary substrate;
step S2, providing a conductive substrate;
step S3, manufacturing a first electrode on one side surface of the conductive substrate;
step S4, forming an RGB stacking structure on the surface of one side of the conductive substrate, which is far away from the first electrode, wherein the RGB stacking structure comprises a red light emitting structure, a green light emitting structure and a blue light emitting structure which are sequentially stacked along a first direction and distributed in a step shape, and a red light mesa, a green light mesa and a blue light mesa are exposed; the red light emitting structure sequentially comprises a first metal reflector, a red light P-type semiconductor layer, a red light active region and a red light N-type semiconductor layer which are stacked along the first direction; the green light emitting structure sequentially comprises a second metal reflector, a green light P-type semiconductor layer, a green light active region and a green light N-type semiconductor layer which are stacked along the first direction; the blue light emitting structure sequentially comprises a third metal reflector, a blue light P-type semiconductor layer, a blue light active region and a blue light N-type semiconductor layer which are stacked along the first direction, and the first direction is perpendicular to the conductive substrate and is directed to the blue light emitting structure by the conductive substrate;
the red light emitting structure, the green light emitting structure and the blue light emitting structure are connected in series in pairs through metal reflectors;
the step S4 specifically includes the following steps:
s4.1, bonding the red light stacking structure on the conductive substrate through the first metal reflector;
s4.2, stripping the first temporary substrate;
s4.3, adhering the first electrode to a first temporary carrier plate through an adhesive;
step S4.4, etching along the surface of the red light N-type semiconductor layer to expose the first temporary carrier plate, forming a first cutting channel, and separating the red light stacking structure into a plurality of independent red light emitting structures;
s4.5, separating the green light stack structure into a plurality of independent green light emitting structures in an etching and film expanding mode, wherein the distance between the green light emitting structures reaches a first preset length;
s4.6, separating the blue light stacking structure into a plurality of independent blue light emitting structures in an etching and film expanding mode, wherein the distance between the blue light emitting structures reaches a second preset length;
step S4.7, bonding each green light-emitting structure on each red light-emitting structure in an aligned mode through the second metal reflector and the red light N-type semiconductor layer to expose the red light table top, and stripping the second temporary substrate;
s4.8, bonding each blue light emitting structure on each green light emitting structure in an aligned mode through the third metal reflector and the green light N-type semiconductor layer to expose a green light table top, and stripping the third temporary substrate to expose the blue light table top;
step S5, manufacturing a second electrode, a third electrode and a fourth electrode;
a second electrode stacked on the blue mesa;
the third electrode is connected with the green light emitting structure and the blue light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
the fourth electrode is connected with the red light emitting structure and the green light emitting structure and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
step S6, depositing an insulating protection layer, where the insulating protection layer covers the RGB stack structure and the exposed surface of the conductive substrate, and exposes the second electrode, the third electrode, and the fourth electrode by photolithography and etching;
step S7, removing the first temporary carrier to form a plurality of pixel units.
8. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: step S4.5 specifically includes the following steps:
s4.5a, adhering the second temporary substrate to the first adhesive film;
s4.5b, etching along the surface of the second metal reflector to expose the first adhesive film to form a second cutting channel, and separating the second cutting channel into a plurality of independent green light emitting structures;
s4.5c, expanding the first adhesion film through a film expanding machine, and increasing the length of the second cutting channel to enable the distance between the green light emitting structures to reach a first preset length;
s4.5d, fixing the green light emitting structures to form rigid connection, and avoiding that the alignment bonding cannot be completed in the subsequent process due to the fact that the first adhesion film is too soft:
filling a first adhesive in the second cutting channel to connect and fix the green light stacking units;
or
And adhering the first adhesive film on a second temporary carrier plate to fix each green light stacking unit.
9. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: step S4.6 specifically includes the following steps:
step S4.6a, adhering the third temporary substrate on a second adhesive film;
s4.6b, etching along the surface of the third metal reflector to expose the second adhesive film, forming a third cutting channel and separating the third cutting channel into a plurality of independent blue light emitting structures;
s4.6c, expanding the second adhesion film through a film expanding machine, and increasing the length of the third cutting channel to enable the distance between the blue light pile light-emitting structures to reach a second preset length;
s4.6d, fixing the blue light emitting structures to form rigid connection, and avoiding the problem that the second adhesion film is too soft to complete para-bonding in the subsequent process:
filling a second adhesive in the third cutting path for connecting and fixing each blue light stacking unit;
or
And adhering the second adhesive film to a third temporary carrier plate to fix each blue light stacking unit.
10. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: the third electrode is stacked on the green mesa, and the fourth electrode is stacked on the red mesa.
11. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: the side walls of one side of the red light emitting structure, the green light emitting structure and the blue light emitting structure are bonded on the same vertical line;
further comprising, after the step S4 and before the step S5, a step Q1:
etching the blue light mesa on the side along the vertical line to expose part of the third metal reflector to form a third metal reflector mesa; etching along the third metal reflector mesa to expose part of the second metal reflector to form a second metal reflector mesa;
the step S5 specifically includes a step Q2:
a second electrode stacked on the blue mesa;
the third electrode covers the third metal reflector table top and is arranged at a distance from the side walls of the green light emitting structure and the blue light emitting structure;
and the fourth electrode covers the second metal reflector table-board and is arranged at a distance from the side walls of the red light emitting structure and the green light emitting structure.
12. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: the first electrode is a P-type electrode, the second electrode is an N-type electrode, and the third electrode and the fourth electrode may be P-type electrodes or N-type electrodes.
13. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: the projection area of the red light emitting structure in the vertical direction is S1, the projection area of the green light emitting structure in the vertical direction is S2, and the projection area of the blue light emitting structure in the vertical direction is S3, then S1 > S2 > S3.
14. The method for manufacturing the RGB Micro-LED chip as claimed in claim 7, wherein: the insulating protective layer includes transparent insulating layer and DBR insulating layer, transparent insulating layer covers the ruddiness mesa the green glow mesa with the exposed surface of blue light mesa, the DBR insulating layer covers RGB stacked structure with conducting substrate's lateral wall.
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| CN202210734682.3A CN115050873A (en) | 2022-06-27 | 2022-06-27 | RGB Micro-LED chip and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274945A (en) * | 2022-09-30 | 2022-11-01 | 江西兆驰半导体有限公司 | Micro-LED chip packaging method |
| CN115425127A (en) * | 2022-11-07 | 2022-12-02 | 江西兆驰半导体有限公司 | Inverted Micro-LED chip and preparation method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274945A (en) * | 2022-09-30 | 2022-11-01 | 江西兆驰半导体有限公司 | Micro-LED chip packaging method |
| CN115274945B (en) * | 2022-09-30 | 2022-12-23 | 江西兆驰半导体有限公司 | Micro-LED chip packaging method |
| CN115425127A (en) * | 2022-11-07 | 2022-12-02 | 江西兆驰半导体有限公司 | Inverted Micro-LED chip and preparation method thereof |
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