JPH09321341A - Photo-semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photo-semiconductor device which provides a uniform optical characteristic and semiconductor characteristic and superior color mixture property at the polychromatic emission, by using the same package and photo semiconductor elements if the polarity applied to these elements is changed as desired. SOLUTION: The photo semiconductor device comprises package electrodes 101 for feeding a power from the outside of a package, and 2 or more independently driven photo-semiconductor elements 105 fixed to them. One type photo- semiconductor elements each have electrodes; one electrode is connected through a conductive adhesive 102 and the other connected through a conductive wire 104. On an insulate substrate the photo-semiconductor elements and electrodes for emitting light are disposed, and a first electrode is connected to the second package electrode through the conductive wire 104.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device using an optical semiconductor element and a method for manufacturing the same, and particularly to the same package and optical device even when the polarity of the voltage supplied to the optical semiconductor element is arbitrarily changed. Using semiconductor elements,
The present invention relates to an optical semiconductor device which has uniform optical characteristics and semiconductor characteristics and is excellent in color mixing properties in multicolor emission, and a manufacturing method thereof.

[0002]

2. Description of the Related Art As one of optical semiconductor devices, there is a chip component type LED assembly which is a light emitting device. In such a light emitting device, a light emitting element, which is an optical semiconductor element, is protected by a chip type protector so that it can be used like an element which is electrically and mechanically stabilized. Such a light emitting device is required to have a small outer shape and stable light characteristics and the like for the purpose of use.

FIG. 5 shows an example of an RGB three-color light emitting diode assembly. This assembly has a plurality of light emitting elements arranged in a package for protecting the light emitting elements from the external environment. As each light emitting element, one in which electrodes of P type, N type, etc. are provided on each surface of the light emitting element is used. Each light emitting element is electrically connected by wire-bonding the front side having one electrode and the package electrode with a conductive wire which is an electrical connecting member so that each light emitting element can be independently driven to emit light of a plurality of colors. . Further, the back side having the other electrode and the package electrode are die-bonded and fixedly connected by a conductive paste or solder which is a conductive adhesive. Since each light emitting element is provided on the same package electrode in consideration of thermal conductivity and effective use of light, the polarity of this electrode and the polarity of each light emitting element are the same, and the same package electrode is the common electrode. Become. Accordingly, in the light emitting device, the respective light emitting elements can be independently driven and densely arranged, and the light condensing property and the color mixing property can be improved.

On the other hand, in the light emitting device, there is a case where the common electrode of the light emitting element needs to be changed in order to prevent the characteristics of the driving circuit or the electrolytic corrosion of the package electrode, the electrode provided on the substrate and the like. In this case, it is necessary to use the same package and the same package electrode to change only the polarities because of the degree of freedom in the circuit design in which the light emitting device is arranged, the heat dissipation of the light emitting device, and the device characteristics in consideration of space.

However, in the light-emitting device shown in FIG. 5 as described above, any LED chip is used in which electrodes of P-type conductivity, N-type conductivity, I-type conductivity, etc. are provided on the front and back surfaces. The electrodes on the surface of the LED chip, which is the back surface of the LED chip facing the same package electrode, are fixed and electrically connected by a conductive paste or solder. Therefore, the polarity of the package electrode and the polarity of the LED chip rear surface electrode arranged thereon must be the same. Therefore, in order to change the common polarity while maintaining the light emitting characteristics of the LED chip itself, the polarities of the package electrodes must be changed. The LED chip has also been changed. To change the polarity according to the polarity of each electrode,
It was unavoidable to change the layout or use LED chips with different polarities. FIG. 6 shows the same package and light emitting element as in FIG. 5, but with the polarity of the common electrode changed. N-type electrode (or P-type electrode) of each light emitting element
Has the same polarity as each individual package electrode. Since each light emitting element has a polarity different from that of the common electrode, each light emitting element is die-bonded and fixedly connected to each package electrode, and the package electrode, which is the same package electrode in FIG. Wire-bonded to the (N-type electrode). That is, when the arrangement form of the LED chips is changed as shown in FIG. 6 to change the common polarity, the arrangement of the light emitting elements becomes discrete. Therefore, there is a problem in that the position of the light source is changed, the color mixture is deteriorated, the directional characteristics of light are expanded and changed, and further the heat dissipation is deteriorated. For example, when it is used for a light source such as an optical sensor or a photo interrupter, a strict directional characteristic is required, and thus such a change in which the position of the optical semiconductor element is substantially changed becomes a particularly serious problem. The polarities of the optical semiconductor elements in FIG. 6 are the same as those in FIG. 4, and the wiring diagram is shown in FIG.

Further, when the polarity of the light emitting diode is simply changed and the LED chip is turned upside down and used, the light extraction efficiency changes. That is, since the light emitting diode has a structure, semiconductors having different forbidden bands must be stacked. When light is emitted through each semiconductor, the light extraction efficiency differs depending on which side of the light emitting diode the light is extracted from, depending on the difference in the forbidden band. Therefore, it is not possible to obtain a light emitting device having uniform light characteristics simply by arranging the electrodes with different polarities. In addition, finding and arranging LED chips having the same light characteristics but different polarities and performing electrical correction for each light-emitting element poses a problem from the viewpoint of improving productivity because common parts are used. Become.

[0007]

Therefore, in the present day when more excellent optical characteristics and productivity are required, the optical semiconductor device and the method for manufacturing the optical semiconductor apparatus having the above configurations are not sufficient, and further improvement in characteristics is required. In view of the above problems, the present invention provides an optical semiconductor device and a method of manufacturing the same, which have constant optical characteristics even when the polarity of electric power supplied to the optical semiconductor element is changed, are excellent in mass productivity, color mixing property, and can be downsized. That is.

[0008]

According to the present invention, a plurality of package electrodes for supplying electric power from the outside to the inside of the package, and at least two or more independently driven electrodes that are contained in the package and fixed to the same package electrode. An optical semiconductor device having an optical semiconductor element capable of forming an optical semiconductor element, wherein the optical semiconductor element has electrodes on both sides of the optical semiconductor element, and is connected to the same package electrode via one electrode and a conductive adhesive. In addition, one type of optical semiconductor element, the other of which is electrically connected to the first package electrode by a conductive wire, and the first and second optical layers for emitting light from the semiconductor layer having a semiconductor junction on the insulating substrate. An electrode is disposed, the first electrode and the second package electrode are electrically connected by a conductive wire, and the same package electrode as the second electrode or The first package electrode and the conductive wire is an optical semiconductor device having a one or more optical semiconductor elements electrically connected.

Further, the conductive adhesive is an optical semiconductor device which is a common adhesive for fixing all the optical semiconductor elements, and the conductive paste is Ag, C, Cu, Au, A.
An optical semiconductor device, which is a resin binder containing at least one selected from l and Pd.

Further, a plurality of package electrodes for supplying electric power from the outside of the package to the inside, and at least two or more independently driven optical semiconductor elements which are included in the package and fixed on the same package electrode are provided. A first semiconductor device having the opto-semiconductor element, which opposes through a semiconductor.
Electrodes on the first surface and the second surface, respectively, and are connected to the same package electrode via the conductive adhesive and the electrodes on the first surface, and the electrodes on the second surface and the first package electrode. A first optical semiconductor element for electrically connecting the semiconductors with a conductive wire, a semiconductor and electrodes for illuminating the semiconductor are arranged on an insulating substrate, and at least one of the electrodes and the second package electrode is electrically conductive. And a second optical semiconductor element electrically connected by a conductive wire, wherein the other electrode of the second optical semiconductor element is provided in accordance with a common polarity of the optical semiconductor device. And a method for manufacturing an optical semiconductor device in which the connection of the conductive wire to the same package electrode or the first package electrode is changed.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION The present inventor has conducted various experiments,
When the polarity of the common electrode electrically connected to a plurality of optical semiconductor elements is changed, it is necessary to change the polarity by using a common package, package electrode, and optical semiconductor element depending on the arrangement and structure of the optical semiconductor element. The inventors have found that the light characteristics, the semiconductor characteristics, the color mixing properties, the mass productivity, and the like are significantly changed, and have completed the present invention.

That is, in terms of the structure of the optical semiconductor element, the semiconductor element arranged with a pair of electrodes and having a semiconductor junction has different optical characteristics in each direction. Therefore, in order to obtain an optical semiconductor device with uniform characteristics, it is necessary to take out light or make incident directions uniform. In particular, in order to change the polarity of the semiconductor device according to the polarity of the external drive circuit, it is necessary to change the polarity by sharing the same member while keeping the light extraction directions aligned. Hereinafter, the present invention will be described in detail with reference to the drawings.

FIG. 1 is a schematic plan view of an RGB three-color light emitting diode assembly showing an example of an optical semiconductor device of the present invention. An individual package electrode and the same package electrode are arranged in the package 1. R as an optical semiconductor device on the same package electrode
Three LED chips capable of emitting light from each GB are provided. One type of LED chip is an N-type electrode (or P-type electrode) on the surface side (light emission observation side) through the semiconductor layer.
And a P-type electrode (or N-type electrode) on the bottom layer surface side. The P-type electrode (or N-type electrode) of this optical semiconductor element has the same polarity as that of the same package electrode as the common electrode, and is die-bonded and fixed by a conductive paste. The N-type electrode (or P-type electrode) is wire-bonded and has the same polarity as the individual package electrode.

Other types of LED chips have electrodes of respective polarities on the surface layer side, and the bottom layer surface is electrically independent of the same package electrode by an insulating substrate. This LE
The P-type electrode (or N-type electrode) of the D chip has the same polarity as the common electrode by being wire-bonded to the same package electrode. The N-type electrode (or P-type electrode) which is the other electrode of this LED chip is wire-bonded to each individual package electrode.
(Note that, in FIG. 1 and FIGS. 4, 5, and 6 described later, all the electrodes of the light emitting elements indicated by the squares of the respective light emitting diode elements have the same polarity. Similarly, the light emitting elements indicated by the circles are the same. All of the electrodes also have the same polarity.) Such an optical semiconductor device can be driven by fixing and conducting the external exposed portion of each package electrode and the drive circuit by soldering or the like. Since each optical semiconductor element is die-bonded and fixed on the same package electrode, they are closely arranged in consideration of the color mixture of the assembly and the uniformity of the directional characteristics, and the heat dissipation from the same package electrode can be improved. .

On the other hand, FIG. 2 is a wiring diagram of the light emitting diode assembly of FIG. FIG. 3 is another wiring diagram,
2, the polarities of the common electrode and the individual electrode are switched. Also, FIG. 4 shows a configuration in which the polarity of the common electrode is changed by changing the connection of four bonding wires of the light emitting diode assembly shown in FIG. 1 so as to correspond to the wiring of FIG.
1 and 4, the light emitting device has the same package, package electrode, light emitting device and its arrangement except that the connection destination of the conductive wire connected to the electrode of the light emitting device having a semiconductor formed on an insulator is changed. Is formed. With this minimum change, the drive circuit polarity can be changed as shown in FIGS.

Comparing FIG. 1 and FIG. 4, the polarities of the common electrodes of the three optical semiconductor elements can be changed by changing only the four wire bond connection points. Wires connected to the P-type electrode (or N-type electrode) of the optical semiconductor element are connected to the individual package electrodes from the same package electrode and also to the N-type electrode (or P-type electrode) of the optical semiconductor element. Is only changed from the same package electrode to an individual package electrode that becomes a common electrode. In FIG. 1, the same package electrode is the common electrode, and in FIG. 4, the individual package electrode is the common electrode.
Hereinafter, each configuration of the present invention will be described in detail.

(Package electrode) What is a package electrode?
The outside of the package is electrically connected to the optical semiconductor element 105 arranged inside the package. The package electrode can be formed in various sizes depending on heat dissipation, electrical conductivity, characteristics of the optical semiconductor element, and the like. Also,
Various types can be provided according to the type and / or number of optical semiconductor elements provided inside. In the present invention, the same package electrode 101 refers to the same electrode in which the optical semiconductor elements are arranged close to each other, and the package electrodes electrically independent of each other without fixing the optical semiconductor element are called individual package electrodes. Therefore, all the light emitting elements and the same package electrode 101 may be electrically connected, or at least one of them may be connected. In order to fix each optical semiconductor element on the same package electrode 101, the other package electrodes can be made extremely small enough to be electrically connected to the optical semiconductor element by a conductive wire or the like. Further, in particular, the same package electrode 101 preferably has good thermal conductivity in order to dispose the heat emitted from the optical semiconductor element 105 to the outside while disposing each optical semiconductor element 105. Further, since the optical semiconductor element is arranged on the package electrode, it is preferable that the reflectance is high in order to effectively use the light emitted by the optical semiconductor element. Specifically, the surface roughness of the same package electrode 101 on which the optical semiconductor element 105 is arranged is 0.1 s.
It is preferably not less than 0.8 s. On the other hand, the surface roughness of the package electrode to which the bonding wire is connected is 1.6.
It is preferably S or more and 10 S or less. As a specific material for the package electrode, a copper or phosphor bronze plate surface plated with a noble metal such as silver or gold is preferably used. The package electrode can be variously used depending on electric conductivity and thermal conductivity, but from the viewpoint of workability, the plate thickness is preferably 0.1 mm to 2 mm.

(Adhesive) The adhesive is an optical semiconductor element 105.
Are arranged on the same package electrode 101. The optical semiconductor element 105 in which a semiconductor is formed on an insulating substrate and the same package electrode 101 may be adhered by an insulating resin, or similar to the optical semiconductor element 105 in which a semiconductor junction is arranged via an electrode. A cured conductive paste may be used as the conductive adhesive.
Further, one adhesive in which the adhesives for fixing the respective optical semiconductor elements are connected and continuous may be used as the common adhesive 102. When the optical semiconductor element is a light emitting element, it is preferable that the common adhesive 102 has good thermal conductivity in order to conduct the heat radiation from the light emitting element to the same package electrode. The adhesive is also required to have good electrical conductivity. As the adhesive, Ag, C, Cu, A as a conductive member
Suitable examples include n-2-methylpyrrolidone containing u, Al, Pd and the like, an epoxy resin diluted with a solvent such as acetone, and a thermosetting resin such as an acrylic resin and an imide resin. As the common adhesive, one having a large fluidity may be used in order to improve the coating property, or one having a small fluidity may be used in order to prevent a large movement of the LED chip. In any case, it is desirable that it has fluidity before curing and is fixed after curing. By using such a common adhesive 102, the optical semiconductor elements 105 can be arranged close to each other due to the flow when the adhesive is cured.

(Package 103) Package 10
3. The optical semiconductor element 105 is fixedly protected in the concave portion and has electrodes so that it can be electrically connected to the outside. In order to further protect the conductive wire 104 and the optical semiconductor element 105 from an external force, an external environment such as dust and water, a translucent protective body may be housed in the recess of the package. Therefore, the package 103 is required to have good adhesiveness to the translucent protective body and higher rigidity than the translucent protective body. The light-transmitting protective body and the optical semiconductor element 105 may be formed in close contact with each other, or may not be in close contact with the optical semiconductor element 105 for heat dissipation and stress relaxation. Further, the translucent protective body may be divided into two or more layers, if desired, such as a multilayer structure of layers having different transmittances.
As a material of the translucent protective body, a resin having excellent weather resistance such as an epoxy resin, a urea resin, a silicon resin, a fluororesin, a polycarbonate resin, or the like is preferably used. In addition, the recess of the package 103 may be shaped like a sloping pot that spreads outward in order to improve the adhesiveness with the translucent protective body and to direct the force exerted by the translucent protective body during thermal expansion to the outside. Further, in order to accommodate and use a light emitting element having a spectral characteristic in visible light, it may be colored to have a light shielding function, and in order to accommodate and use a light receiving element, sensitivity to a desired light receiving wavelength is required. It may be colored to match.

The package 103 is an optical semiconductor element 105.
It is desired to have an insulating property in order to electrically cut off the electric field from the outside. Furthermore, when the package 103 is affected by heat from the light emitting element or the external environment, it is preferable that the package 103 has a small coefficient of thermal expansion in consideration of the adhesion to the protective body. The inner surface of the package can be embossed to increase the adhesion area, or plasma-treated to improve the adhesion with the protector.

Resins such as polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, epoxy resin, phenol resin, acrylic resin and PBT resin can be used for such a package. The package may be formed integrally with the package and the package electrode, or the package may be divided into a plurality of pieces and combined by fitting or the like. Such a package can be formed relatively easily by insert molding or the like. Further, although the package is shown as a molded product with electrodes inserted therein, the present invention is not limited to this, and can be applied to various package forms such as a printed circuit board.

(Conductive Wire 104) The conductive wire 104 used in the present invention is required to have good ohmic properties, mechanical connectivity, electrical conductivity and thermal conductivity with each optical semiconductor element electrode. The thermal conductivity is preferably 0.01 cal / cm ² / cm / ° C or higher, more preferably 0.5 cal / cm ² / cm / ° C or higher. Specifically as such a conductive wire, gold,
Examples of the conductive wire include copper, platinum, aluminum and the like and alloys thereof. Such a conductive wire can easily connect the package electrode and the electrode of each optical semiconductor element 105 with a wire bonding device.

(Optical semiconductor element 105) Examples of the optical semiconductor element 105 used in the present invention include a light emitting element for converting electricity into light and a light receiving element for converting light into electricity.

As the light emitting device, a liquid phase growth method or MOCV method is used.
GaAlN, ZnS, ZnSe,
SiC, GaP, GaAlAs, AlInGaP, In
A light emitting layer formed of a semiconductor such as GaN, GaN, or AlInGaN is used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a PN junction, a heterostructure, and a double heterostructure. The emission wavelength can be selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and its degree of mixed crystal. Furthermore, in order to have a quantum effect, the light emitting layer may have a single quantum well structure or a multiple quantum well structure.

The semiconductor thus formed is subjected to a vacuum deposition method, heat,
A desired electrode is formed by using various CVD methods utilizing light, discharge energy and the like. The semiconductor electrode may be provided on one side of the semiconductor or on both sides thereof. The semiconductor wafer on which the electrodes are formed is directly full-cut by a dicing saw in which a blade having a diamond cutting edge rotates, or after a groove having a width wider than the cutting edge width is cut (half cut), the semiconductor wafer is cut by an external force. Divide. Alternatively, an extremely thin scribe line (meridian line) is drawn on the semiconductor wafer by, for example, a grid pattern by a scriber in which a diamond needle at the tip moves reciprocally linearly, and then the wafer is split by external force to cut the semiconductor wafer into chips. Form chips. Further, in order to form each electrode on the emission observation surface side of the optical semiconductor element, each semiconductor can be formed by etching into a desired shape. Like this,
Examples of etching include dry etching and wet etching. Examples of the dry etching include reactive ion etching, ion milling, focused beam etching, and ECR etching. For wet etching, a mixed acid of nitric acid and phosphoric acid can be used. However, it goes without saying that a mask is formed in a desired shape using a material such as silicon nitride or silicon dioxide before etching.

In order to use the optical semiconductor device to emit full-color light, an LED chip that emits RGB emission colors can be used. In particular, when considering use outdoors, it is preferable to use green and blue gallium nitride-based compound semiconductors as the high-luminance semiconductor material.
For red, it is preferable to use a gallium / aluminum / arsenic-based semiconductor or an aluminum / indium / gallium / phosphorus-based semiconductor, but various types can be used depending on the application. In order to obtain a full-color emission color, it is preferable that the emission wavelength of R: red is 600 nm to 700 nm, the emission wavelength of G: green is 495 nm to 565 nm, and the emission wavelength of B: blue is 430 nm to 490 nm. Further, a plurality of optical semiconductor elements may be provided to adjust the emission brightness. Specifically, four optical semiconductor elements that emit the same type of blue, three optical semiconductor elements that emit the same type of green, and two optical semiconductor elements that emit the same type of red can be used. . By making the polarity of the electrical connection the same for each type,
Drive control can be performed for each emission wavelength.

On the other hand, as the light receiving element, one using a single crystal semiconductor or a polycrystalline semiconductor such as Ge, Si, InAs, CdS formed by utilizing the liquid crystal growth method, plasma,
A microcrystal that uses energy such as heat and light, an optical sensor that uses a semiconductor such as an amorphous semiconductor of Si, SiC, SiGe, or a solar cell is used. Examples of the semiconductor structure include a homostructure and a heterostructure having a PN junction and a PIN junction. Various light receiving wavelengths of the light receiving element can be selected depending on the material of the semiconductor and the degree of mixed crystal thereof. A light-receiving element can be formed by forming a semiconductor having the above-described structure into a desired size and shape on a metal substrate such as glass, heat-resistant resin, aluminum, and stainless steel, and establishing electrical connection. For the electrodes of the light receiving element, various metals such as Al, Ag and Au formed by sputtering or vacuum deposition, ZnO ₂ , I
Various metal oxides such as TO and SnO ₂ and n ⁺ type semiconductors can be preferably used. In order to drive the light receiving element for each wavelength, a color filter may be formed for each optical semiconductor element, or the semiconductor may be changed for each wavelength. Similar to the above, the light receiving element is 2
Similar effects can be obtained with four or more types. Further, in other diode elements, effects such as promotion of standardization of manufacturing process and liberalization of assembly design can be obtained. Hereinafter, specific embodiments of the present invention will be described in detail, but it is needless to say that the present invention is not limited to only the specific embodiments.

[0028]

【Example】

(Example 1) As an optical semiconductor element, three LED chips each having red, green, and blue emission colors and capable of full-color emission by each combination were used. GaAlAs (emission wavelength 660 nm), InGaN (emission wavelength 525 nm), semiconductor light emitting layers of the optical semiconductor element,
Each LED using InGaN (emission wavelength 470 nm)
Configured chip.

Specifically, a semiconductor wafer for an LED chip that emits red light is a P-type GaA substrate on a P-type gallium arsenide substrate which is a conductive substrate continuously by a temperature difference liquid phase epitaxy method.
lAs is grown, N-type GaAlAs is grown on it,
P-type GaAlAs is formed. The semiconductor wafer that emits blue and green light has a thickness of 400 μm as an insulating substrate.
N-type and P-type gallium nitride compound semiconductors are deposited on the sapphire substrate of 5 .mu.m and 1 .mu.m respectively by MOCVD to form a heterostructure PN junction. The P-type gallium nitride semiconductor is formed by annealing after doping Mg which is a P-type dopant. Next, LE
After electrodes were formed by sputtering so as to be the electrodes of the D chip, a scribe line was drawn by a scriber to use each semiconductor wafer as an LED chip, and the semiconductor wafer was cut into a size of 350 μm square by an external force.

On the other hand, a package electrode having a phosphor bronze plate surface plated with silver was insert-molded in a liquid crystal polymer to form a package having a package recess and a package electrode on the bottom surface. Each LED chip was fixed on a package electrode provided in a recess in the package with a die bonder using Ag paste. On the package electrode on which the LED chips are stacked, many adhesives are formed by using a collet so that each LED chip can be arranged on a common Ag paste. After the LED chip was placed on the package electrode, the Ag paste was cured and fixed. Thus, after forming 100 optical semiconductor elements fixed on the same package electrode, an Au wire having a diameter of 0.03 mm was wire bonded to each electrode of the LED chip and the package electrode using a wire bonding apparatus. The wire bonding connection was performed only by changing the wire bonding connection destination between the optical semiconductor device having the common polarity shown in FIG. 1 and the optical semiconductor device having the common polarity shown in FIG.

Next, a non-colored epoxy resin as a translucent protective member was filled in the recess in the package and cured at 120 ° C. for 16 hours. In this way, 50 optical semiconductor devices each having an LED chip of three colors encapsulated and having different common polarities were formed. Each of the optical semiconductor devices formed in this way had good color mixing properties during multicolor emission, and no color unevenness occurred in the package.

[0032]

As described above, with the configuration of claim 1 of the present invention, even when the common polarity of the optical semiconductor device is changed, it is possible to cope with the change without changing the optical semiconductor element and its arrangement position form. . Therefore, changes in optical characteristics can be prevented, and common parts can be used. Further, by using the same package electrode, it is possible to increase the size of the heat dissipation portion, and thus it is possible to suppress the temperature rise of the optical semiconductor device. Further, since the main heat radiation path is one, the heat design can be facilitated.

According to the second aspect of the present invention, since the optical semiconductor elements are arranged on the same electrode by using the common adhesive, the intervals between the optical semiconductor elements can be reduced without deteriorating the optical characteristics. .

With the structure according to the third aspect of the present invention, an optical semiconductor device having more excellent thermal conductivity and electrical conductivity can be obtained.

With the configuration of claim 4 of the present invention, the common polarity of the optical semiconductor device can be changed while maintaining the optical characteristics. Further, it can be mass-produced with high productivity.

[Brief description of drawings]

1 is a schematic view of an optical semiconductor device of the present invention, and FIG.
1A is a schematic top view of an optical semiconductor device of the present invention, and FIG. 1B is a sectional view taken along the line AA of FIG.

FIG. 2 is a schematic perspective view of an optical semiconductor device in which an optical semiconductor element of the present invention and a package electrode are connected.

3 is an internal wiring diagram of the optical semiconductor device shown in FIG. 2 of the present invention.

FIG. 4 is a schematic perspective view of an optical semiconductor device used in the present invention in which the electrical connection of the optical semiconductor device shown in FIG. 2 is changed and the polarity of the common electrode is changed.

5 is an internal wiring diagram of the optical semiconductor device shown in FIG. 4 of the present invention.

FIG. 6 is a perspective view of an optical semiconductor device shown for comparison with the present invention.

FIG. 7 is a schematic perspective view of an optical semiconductor device in which the electrical connection of the optical semiconductor device shown for comparison with the present invention is changed and the polarity of the common electrode is changed.

[Explanation of symbols]

 101 ... Same package electrode 102 ... Common adhesive 103 ... Package 104 ... Conductive wire which is an electrical connection member 105 ... LED chip which is an optical semiconductor element 106 ... Solder 107 ..External electrode 108 ... Substrate 601 ... Same package electrode 602 ... Adhesive 603 ... Package 604 ... Electrical connection member 605 ... LED chip which is an optical semiconductor element

Claims (4)

[Claims] 1. A plurality of package electrodes for supplying electric power from the outside to the inside of the package, and at least two or more independently driven optical semiconductor elements included in the package and fixed to the same package electrode. An optical semiconductor device, wherein the optical semiconductor element has electrodes on both sides of the optical semiconductor element, and one electrode is connected to the same package electrode via a conductive adhesive and the other is connected by a conductive wire. An optical semiconductor element of one type electrically connected to the first package electrode, and first and second electrodes for emitting light from a semiconductor layer having a semiconductor junction on an insulating substrate are arranged. The electrode and the second package electrode are electrically connected by a conductive wire and conductive with the same package electrode as the second electrode or the first package electrode. An optical semiconductor device having one or more types of optical semiconductor elements electrically connected by a conductive wire. 2. The optical semiconductor device according to claim 1, wherein the conductive adhesive is a common adhesive for fixing all optical semiconductor elements. 3. The conductive paste is Ag, C, Cu, A
The optical semiconductor device according to claim 2, which is a resin binder containing at least one selected from u, Al, and Pd. 4. A plurality of package electrodes for supplying electric power from the outside to the inside of the package, and at least two or more independently driven optical semiconductor elements which are contained in the package and fixed on the same package electrode. The optical semiconductor element has electrodes on a first surface and a second surface facing each other via a semiconductor, and the same package electrode is provided via an electrically conductive adhesive with the electrode on the first surface. And a first optical semiconductor element for electrically connecting the second surface electrode and the first package electrode to each other by a conductive wire, and a semiconductor on the insulating substrate and each for emitting the semiconductor light. A method for manufacturing an optical semiconductor device having a second optical semiconductor element in which electrodes are arranged and at least one of the electrodes and the second package electrode are electrically connected by a conductive wire. Wherein the connection of the conductive wire to the other electrode of the second optical semiconductor element is changed to the same package electrode or the first package electrode according to the common polarity of the optical semiconductor device. Device manufacturing method.