JPH06177429A - Blue color led device - Google Patents
Blue color led deviceInfo
- Publication number
- JPH06177429A JPH06177429A JP35194892A JP35194892A JPH06177429A JP H06177429 A JPH06177429 A JP H06177429A JP 35194892 A JP35194892 A JP 35194892A JP 35194892 A JP35194892 A JP 35194892A JP H06177429 A JPH06177429 A JP H06177429A
- Authority
- JP
- Japan
- Prior art keywords
- led chip
- lead frame
- compound semiconductor
- semiconductor layer
- insulating spacer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 125000006850 spacer group Chemical group 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 239000004020 conductor Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、p−n接合窒化ガリウ
ム系の化合物半導体層を用いた青色LED素子に係り、
特に、青色LEDチップの小型化を図った青色LED素
子の改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a blue LED device using a pn junction gallium nitride compound semiconductor layer.
In particular, the present invention relates to an improvement of a blue LED element that aims to downsize the blue LED chip.
【0002】[0002]
【従来の技術】青色LED(発光ダイオード)、青色L
D(レーザーダイオード)等の青色発光デバイスの材料
としてGaN、InGaN、GaAlN等の窒化ガリウ
ム系化合物半導体が注目されている。2. Description of the Related Art Blue LED (light emitting diode), blue L
As a material for blue light emitting devices such as D (laser diode), gallium nitride-based compound semiconductors such as GaN, InGaN, and GaAlN are drawing attention.
【0003】窒化ガリウム系化合物半導体の中、例え
ば、GaNを用いた従来の青色LED素子の構造を説明
すると、透光性基板としてサファイア基板を用い、この
サフャイア基板上に、n型GaN層、n型InGaN層
及びp型GaN層を順次積層した化合物半導体層からな
るLEDチップを形成し、次いで、n型GaN層上及び
p型GaN層上に夫々電極を形成し、これら電極は、好
適な導電性接着剤を介して、離間した一対のリードフレ
ームに電気的に接続されると共に、化合物半導体層から
なるLEDチップを一対のリードフレームに支持してい
る。即ち、LEDチップの冷却のため、LEDチップ
は、サフャイヤ基板を発光面側にしてp−n接合窒化ガ
リウム系の化合物半導体層側を両リードフレームに支持
された構造となっている。そして、リードフレーム上に
は、LEDチップを包囲し且つLEDチップからの光を
集光するようにレンズ状のモールドが形成されている。To explain the structure of a conventional blue LED element using, for example, GaN among gallium nitride-based compound semiconductors, a sapphire substrate is used as a translucent substrate, and an n-type GaN layer, n -Type InGaN layer and p-type GaN layer are sequentially laminated to form an LED chip, and then electrodes are formed on the n-type GaN layer and the p-type GaN layer, respectively, and these electrodes have suitable conductivity. Is electrically connected to a pair of spaced lead frames via a conductive adhesive, and the pair of lead frames supports an LED chip made of a compound semiconductor layer. That is, in order to cool the LED chip, the LED chip has a structure in which the pn junction gallium nitride-based compound semiconductor layer side is supported by both lead frames with the sapphire substrate as the light emitting surface side. Then, a lens-shaped mold is formed on the lead frame so as to surround the LED chip and collect light from the LED chip.
【0004】しかしながら、このような構造の青色LE
D素子では、LEDチップの大きさを、離間したリード
フレームの間隔以上にしなければならず、現状では、機
械強度及び加工技術等の問題により、リードフレーム間
の間隔が0.3mm必要であり、少なくとも0.6mm
前後の長さのLEDチップの大きさとならざるを得ず、
より小型化の青色LED素子を得る場合に大きな障壁と
なっていた。また、従来、LEDチップの側面から出る
光をサファイア基板側に集光するために、LEDチップ
の側面にカップ状のフレームを取付けることが知られて
いるが、上述した構造の青色LED素子では、LEDチ
ップが一対のリードフレームの両方に支持されているた
め、一方のリードフレームにLEDチップを支持させる
構造であるカップ状リードフレームも応用できず、LE
Dチップの側面から出る光を有効的に利用できないとい
う不都合があった。However, the blue LE having such a structure
In the D element, the size of the LED chip must be equal to or larger than the distance between the separated lead frames, and at present, the distance between the lead frames is 0.3 mm due to problems such as mechanical strength and processing technology. At least 0.6 mm
Inevitably the size of the front and rear LED chips,
This has been a big obstacle in obtaining a more compact blue LED element. Further, conventionally, it is known that a cup-shaped frame is attached to the side surface of the LED chip in order to collect the light emitted from the side surface of the LED chip on the sapphire substrate side. Since the LED chip is supported by both of the pair of lead frames, it is not possible to apply the cup-shaped lead frame having a structure in which the LED chip is supported by one of the lead frames.
There is a disadvantage that the light emitted from the side surface of the D chip cannot be effectively used.
【0005】[0005]
【発明が解決しようとする課題】本発明の目的は、冷却
のため、透光性基板を発光面側にし、一方、p−n接合
窒化ガリウム系の化合物半導体層側をリードフレーム側
とした青色LED素子において、LEDチップをより小
型化できる青色LED素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to make a transparent substrate a light emitting surface side for cooling, and a pn junction gallium nitride-based compound semiconductor layer side a lead frame side for a blue color. An LED element is to provide a blue LED element capable of further miniaturizing an LED chip.
【0006】[0006]
【課題を解決するための手段】上述の目的は、透光性基
板と、この透光性基板上に積層されたp−n接合窒化ガ
リウム系の化合物半導体層とからなるLEDチップを具
備してなる青色LED素子において、LEDチップが、
該化合物半導体層に重畳された絶縁スペーサを介して一
方のリードフレーム上に形成されており、また、化合物
半導体層に対向した絶縁スペーサ上には、化合物半導体
層のp型及びn型の窒化ガリウム層に夫々接続された金
属電極層が形成され、これら金属電極層とリードフレー
ムとが電気的に接続されていることを特徴とする青色L
ED素子により、解決される。The above-mentioned object is provided with an LED chip comprising a transparent substrate and a pn junction gallium nitride-based compound semiconductor layer laminated on the transparent substrate. In the blue LED element, the LED chip is
The p-type and n-type gallium nitride of the compound semiconductor layer is formed on one of the lead frames through an insulating spacer that overlaps with the compound semiconductor layer, and on the insulating spacer that faces the compound semiconductor layer. Blue L, characterized in that metal electrode layers respectively connected to the layers are formed and these metal electrode layers and the lead frame are electrically connected.
It is solved by the ED element.
【0007】好適には、上記青色LED素子において、
一方のリードフレームが、前記LEDチップの側面を包
囲したカップ部を有している。Preferably, in the above blue LED element,
One of the lead frames has a cup portion that surrounds the side surface of the LED chip.
【0008】[0008]
【作用】LEDチップが両電極部材及び絶縁スペーサを
介して一方のリードフレーム上に形成されることによ
り、従来、離間した一対のリードフレームの双方に支持
されていたときの如く、LEDチップの大きさがリード
フレームの離間間隔による制約を受けないので、より小
さいLEDチップを用いることができ、全体として青色
LED素子を小型化することができる。また、製造にお
いては、大幅に収率を向上さすことができる。The LED chip is formed on one of the lead frames through both the electrode members and the insulating spacer, so that the size of the LED chip is the same as when conventionally supported by both of the pair of lead frames which are separated from each other. However, a smaller LED chip can be used, and the blue LED element can be downsized as a whole. Further, in the production, the yield can be greatly improved.
【0009】また、LEDチップが両電極部材及び絶縁
スペーサを介して一方のリードフレーム上に形成される
ので、LEDチップの側面を全周に亙って包囲するカッ
プ部を有した一方のリードフレームを使用することがで
きる。リードフレームのカップ部により、LEDチップ
の側面から出る光を有効的に透光性基板側の発光面に発
光させることができ、青色LED素子の外部量子効率の
向上を図ることができる。Further, since the LED chip is formed on one of the lead frames through both electrode members and the insulating spacer, the one lead frame having the cup portion which surrounds the side surface of the LED chip over the entire circumference. Can be used. By the cup portion of the lead frame, the light emitted from the side surface of the LED chip can be effectively emitted to the light emitting surface on the transparent substrate side, and the external quantum efficiency of the blue LED element can be improved.
【0010】[0010]
【実施例】以下、図面を参照しながら、本発明の一実施
例について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【0011】図1には、本発明の一実施例に係る青色L
ED素子が示されている。この青色LED素子はLED
チップ2を含んでいる。このLEDチップ2は、透光性
基板としてのサフャイヤ基板4と、p−n接合窒化ガリ
ウム系の化合物半導体層とを有しており、化合物半導体
層は、サフャイヤ基板4上に順次積層されたn型GaN
層6、n型InGaN層8及びp型GaN層10とから
なっている。図1から明らかなように、p型GaN層1
0にはニッケル電極12が積層され、一方、n型GaN
層6には、好適なエッチングによりn型InGaN層8
及びp型GaN層10を取り除かれた位置でアルミニウ
ム電極14が積層されている。これらニッケル電極12
及びアルミニウム電極14は、蒸着等の好適な手段によ
りp型GaN層10及びn型GaN層6にそれぞれ容易
に形成される。FIG. 1 shows a blue L according to an embodiment of the present invention.
The ED element is shown. This blue LED element is an LED
Includes chip 2. This LED chip 2 has a sapphire substrate 4 as a translucent substrate and a pn junction gallium nitride-based compound semiconductor layer, and the compound semiconductor layers are sequentially laminated on the sapphire substrate 4. Type GaN
It comprises a layer 6, an n-type InGaN layer 8 and a p-type GaN layer 10. As is clear from FIG. 1, the p-type GaN layer 1
0 is laminated with a nickel electrode 12, while n-type GaN is used.
The layer 6 is an n-type InGaN layer 8 by suitable etching.
The aluminum electrode 14 is laminated at a position where the p-type GaN layer 10 is removed. These nickel electrodes 12
The aluminum electrode 14 and the aluminum electrode 14 are easily formed on the p-type GaN layer 10 and the n-type GaN layer 6, respectively, by a suitable means such as vapor deposition.
【0012】ニッケル電極12とアルミニウム電極14
とは、導電性の良い材料であって、例えば、銀ペース
ト、インジウム、半田等からなる導電性接着剤層16、
18を介して金属電極層20、22に夫々固着されてお
り、これら金属電極層20、22は、例えば、金を蒸着
する等によって絶縁スペーサ24上に形成されている。
絶縁スペーサ24の大きさは、後述する電極構造のた
め、LEDチップ2より大きい。絶縁スペーサ24は、
熱電導性の良い材料であって、例えば、銀ペースト、イ
ンジウム、半田等からなる接着剤層26を介してリード
フレーム28上に固着されている。リードフレーム28
は、LEDチップ2の側面を全周に亙って包囲するよう
にカップ部30を有している。即ち、LEDチップ2は
接着剤層26、絶縁スペーサ24、金属電極層20、2
2及び導電性接着剤16、18を介してリードフレーム
28のカップ部30の底部に取付けられている。Nickel electrode 12 and aluminum electrode 14
Is a material having good conductivity, for example, a conductive adhesive layer 16 made of silver paste, indium, solder, or the like,
They are fixed to the metal electrode layers 20 and 22 via 18, respectively, and these metal electrode layers 20 and 22 are formed on the insulating spacer 24 by, for example, vapor deposition of gold.
The size of the insulating spacer 24 is larger than that of the LED chip 2 because of the electrode structure described later. The insulating spacer 24 is
It is a material having good thermal conductivity and is fixed on the lead frame 28 via an adhesive layer 26 made of, for example, silver paste, indium, solder or the like. Lead frame 28
Has a cup portion 30 so as to surround the side surface of the LED chip 2 over the entire circumference. That is, the LED chip 2 includes the adhesive layer 26, the insulating spacer 24, the metal electrode layers 20, 2
2 and the conductive adhesives 16 and 18 are attached to the bottom portion of the cup portion 30 of the lead frame 28.
【0013】青色LED素子は、カップ部30を有した
リードフレーム28と離間して併設されたリードフレー
ム32を有しており、LEDチップ2の化合物半導体層
に対向した絶縁スペーサ24上に形成された各金属電極
層16、18は、好適なボンデング手段により形成され
た導線34、36を通じてリードフレーム28、32に
電気的に接続されている。The blue LED element has a lead frame 28 having a cup portion 30 and a lead frame 32 provided separately from the lead frame 28, and is formed on an insulating spacer 24 facing the compound semiconductor layer of the LED chip 2. Each of the metal electrode layers 16 and 18 is electrically connected to the lead frames 28 and 32 through the conductive wires 34 and 36 formed by suitable bonding means.
【0014】そして、青色LED素子には、リードフレ
ーム28のカップ部30の底部に接着剤層26、絶縁ス
ペーサ24及び金属電極層20、22を介して取り付け
られたLEDチップ2を中心にして、両リードフレーム
28、32を覆うモールド38が設けられており、この
モールド38は、LEDチップ2からの光を集光するよ
うにレンズ状に形成されている。In the blue LED element, the LED chip 2 attached to the bottom of the cup portion 30 of the lead frame 28 via the adhesive layer 26, the insulating spacer 24, and the metal electrode layers 20 and 22 is used as a center. A mold 38 that covers both the lead frames 28 and 32 is provided, and this mold 38 is formed in a lens shape so as to collect light from the LED chip 2.
【0015】このように形成された青色LED素子で
は、リードフレーム28、32を介して順電圧5Vで、
発光波長430nm、約300μWを示した。一方のリ
ードフレームだけでLEDチップを支持することなく、
一対のリードフレームにLEDチップを支持させた従来
の青色LED素子の発光出力が200μWであるのに比
べて、本実施例の青色LED素子は、リードフレーム2
8のカップ部30によるLEDチップ2の側面への散乱
を透光性基板4側の発光方向に寄与さすことができ、
1.5倍ほど明るくなった。In the blue LED element thus formed, a forward voltage of 5V is applied via the lead frames 28 and 32.
The emission wavelength was 430 nm and the emission was about 300 μW. Without supporting the LED chip with only one lead frame,
Compared with the emission output of the conventional blue LED element in which an LED chip is supported by a pair of lead frames is 200 μW, the blue LED element of the present embodiment has a lead frame 2
The scattering of the side surface of the LED chip 2 by the cup portion 30 of 8 can contribute to the light emitting direction on the transparent substrate 4 side.
It became 1.5 times brighter.
【0016】しかも、この実施例では、一対のリードフ
レームにLEDチップを支持させた従来のものに比べ
て、LEDチップ2の大きさを約3割も小さくすること
ができる。このことは、LEDチップ2を切り出すウエ
ハを約6割程度有効に利用できることであり、即ち、一
定のウエハから個数を6割多くしてLEDチップが取れ
ることを意味する。Moreover, in this embodiment, the size of the LED chip 2 can be reduced by about 30% as compared with the conventional one in which the LED chips are supported by the pair of lead frames. This means that about 60% of the wafers from which the LED chips 2 are cut can be effectively used, that is, the LED chips can be obtained by increasing the number of wafers from a certain wafer by 60%.
【0017】[0017]
【発明の効果】上述したように、本発明によれば、金属
電極層を有した絶縁スペーサをLEDチップとリードフ
レームとの間に設けることにより、LEDチップを1つ
のリードフレームに取り付けることができ、これによ
り、LEDチップの小型化、青色LED素子全体の小型
化が図れ、しかも、LEDチップをリードフレームのカ
ップ部に取り付けることができ、これにより、外部量子
効率を向上さすことができる。As described above, according to the present invention, the LED chip can be attached to one lead frame by providing the insulating spacer having the metal electrode layer between the LED chip and the lead frame. As a result, the LED chip can be downsized, and the blue LED element as a whole can be downsized, and the LED chip can be attached to the cup portion of the lead frame, whereby the external quantum efficiency can be improved.
【図1】本発明の一実施例による青色LED素子を示す
断面図である。FIG. 1 is a sectional view showing a blue LED device according to an embodiment of the present invention.
2 LEDチップ 4 透光性基板(サファイヤ基板) 6 n型GaN層 8 n型InGaN層 10 p型GaN層 20、22 金属電極層 24 絶縁スペーサ 28、32 リードフレーム 30 カップ部 2 LED chip 4 Light transmissive substrate (sapphire substrate) 6 n-type GaN layer 8 n-type InGaN layer 10 p-type GaN layer 20, 22 metal electrode layer 24 insulating spacers 28, 32 lead frame 30 cup part
Claims (2)
されたp−n接合窒化ガリウム系の化合物半導体層とか
らなるLEDチップを具備してなる青色LED素子にお
いて、 前記LEDチップが、該化合物半導体層に重畳された絶
縁スペーサを介して一方のリードフレーム上に形成され
ており、また、前記化合物半導体層に対向した絶縁スペ
ーサ上には、化合物半導体層のp型及びn型の窒化ガリ
ウム層に夫々接続された金属電極層が形成され、これら
金属電極層とリードフレームとが電気的に接続されてい
ることを特徴とする青色LED素子。1. A blue LED element comprising an LED chip comprising a transparent substrate and a pn junction gallium nitride-based compound semiconductor layer laminated on the transparent substrate, wherein the LED chip Is formed on one of the lead frames via an insulating spacer that is superposed on the compound semiconductor layer, and the p-type and n-type of the compound semiconductor layer are formed on the insulating spacer facing the compound semiconductor layer. A blue LED element characterized in that metal electrode layers respectively connected to the gallium nitride layer are formed, and these metal electrode layers and the lead frame are electrically connected.
Dチップの側面を包囲したカップ部を有してなることを
特徴とする青色LED素子。2. The lead frame of the one side is the LE
A blue LED element having a cup portion surrounding a side surface of a D chip.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35194892A JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue color led device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35194892A JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue color led device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06177429A true JPH06177429A (en) | 1994-06-24 |
Family
ID=18420727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35194892A Pending JPH06177429A (en) | 1992-12-08 | 1992-12-08 | Blue color led device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06177429A (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954036A (en) * | 1995-08-17 | 1997-02-25 | Kobe Steel Ltd | Cr concentration meter |
EP0921577A1 (en) * | 1997-01-31 | 1999-06-09 | Matsushita Electronics Corporation | Light emitting element, semiconductor light emitting device, and method for manufacturing them |
JP2002289923A (en) * | 2001-03-28 | 2002-10-04 | Toyoda Gosei Co Ltd | Light-emitting diode and its manufacturing method |
EP1258929A2 (en) | 2001-05-15 | 2002-11-20 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
US6696704B1 (en) | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
US6744124B1 (en) * | 1999-12-10 | 2004-06-01 | Siliconix Incorporated | Semiconductor die package including cup-shaped leadframe |
US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
JP2007043180A (en) * | 2005-08-04 | 2007-02-15 | Samsung Electronics Co Ltd | Led package and manufacturing method thereof |
US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
US7589396B2 (en) | 1999-09-13 | 2009-09-15 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
US7595547B1 (en) | 2005-06-13 | 2009-09-29 | Vishay-Siliconix | Semiconductor die package including cup-shaped leadframe |
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US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
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US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
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-
1992
- 1992-12-08 JP JP35194892A patent/JPH06177429A/en active Pending
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954036A (en) * | 1995-08-17 | 1997-02-25 | Kobe Steel Ltd | Cr concentration meter |
EP0921577A4 (en) * | 1997-01-31 | 2007-10-31 | Matsushita Electric Ind Co Ltd | Light emitting element, semiconductor light emitting device, and method for manufacturing them |
EP0921577A1 (en) * | 1997-01-31 | 1999-06-09 | Matsushita Electronics Corporation | Light emitting element, semiconductor light emitting device, and method for manufacturing them |
US6696704B1 (en) | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
US7589396B2 (en) | 1999-09-13 | 2009-09-15 | Vishay-Siliconix | Chip scale surface mount package for semiconductor device and process of fabricating the same |
US6744124B1 (en) * | 1999-12-10 | 2004-06-01 | Siliconix Incorporated | Semiconductor die package including cup-shaped leadframe |
US6909170B2 (en) * | 1999-12-10 | 2005-06-21 | Siliconix Incorporated | Semiconductor assembly with package using cup-shaped lead-frame |
US9040356B2 (en) | 1999-12-10 | 2015-05-26 | Vishay-Siliconix | Semiconductor including cup-shaped leadframe packaging techniques |
JP2002289923A (en) * | 2001-03-28 | 2002-10-04 | Toyoda Gosei Co Ltd | Light-emitting diode and its manufacturing method |
EP1258929A2 (en) | 2001-05-15 | 2002-11-20 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
EP1258929A3 (en) * | 2001-05-15 | 2008-09-10 | LumiLeds Lighting U.S., LLC | Semiconductor LED flip-chip having low refractive index underfill |
US6853010B2 (en) | 2002-09-19 | 2005-02-08 | Cree, Inc. | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
US9608166B2 (en) | 2003-08-14 | 2017-03-28 | Cree, Inc. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7183587B2 (en) | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
US7029935B2 (en) | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
USRE45796E1 (en) | 2004-12-23 | 2015-11-10 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
US7595547B1 (en) | 2005-06-13 | 2009-09-29 | Vishay-Siliconix | Semiconductor die package including cup-shaped leadframe |
JP2007043180A (en) * | 2005-08-04 | 2007-02-15 | Samsung Electronics Co Ltd | Led package and manufacturing method thereof |
US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
US9220149B2 (en) | 2006-01-20 | 2015-12-22 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
US7728411B2 (en) * | 2006-02-15 | 2010-06-01 | Sandisk Corporation | COL-TSOP with nonconductive material for reducing package capacitance |
US9951938B2 (en) | 2009-10-02 | 2018-04-24 | GE Lighting Solutions, LLC | LED lamp |
US9841175B2 (en) | 2012-05-04 | 2017-12-12 | GE Lighting Solutions, LLC | Optics system for solid state lighting apparatus |
US10139095B2 (en) | 2012-05-04 | 2018-11-27 | GE Lighting Solutions, LLC | Reflector and lamp comprised thereof |
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